Nanourządzenia elektroniki...

XLII Zjazd Fizyków Polskich, Nanotechnologia, Poznań, 12.09.2013 1/53

Katedra Elektroniki, Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie

T. Stobiecki

Department of Electronics AGH, Poland

Nanourządzenia elektroniki spinowej

NANOSPIN - Nanoscale spin torque devices for spin electronics

W. Skowroński, M. Czapkiewicz, M. Frankowski, J. Kanak, P. Mietniowski, W.

Powroźnik, Z. Szklarski, P. Wiśniowski, J. Wrona (Singulus A.G), A. Żywczak

E – Control – Urządzenia elektroniki spinowej sterowane polem

elektrycznym

Magnetic Recording

and Magnetic Sensors

Semiconductor Devices

and Integrated Curcuits

CHARGE SPIN

NANOELECTRONICS

SpintronicsMRAM + Circuit Technology

Semiconductor

Spintronics

SPINTRONICS

Spintronics road map

Commercial spintronics devices• head TMR/HDD

• M-RAM, STT-RAM

Technology of magnetic nanostructers (TMR-MTJ)• sputtering

• nanofabrication (e-litography)

Spin Transfer Torque

• Current Induced Magnetization Switching (CIMS) STT-RAM

• spin dynamics: ST-FMR ST- Oscillator

Voltage-induced magnetism

• Static anisotropy changes – tunable sensor

• voltage induced precession

Conclusions

Zielona informatyka Green I T(echnology)

Green I(nformation)T(echnology)

S. Yuasa (2012)

Green IT

S. Yuasa (2012)

Green IT

S. Yuasa (2012)

Tomasz Stobiecki, Aalto University, August 2013 7/35

Department of Electronics, AGH University of Science and Technology

S. Yuasa talk , Kraków Jan (2012)

Green IT

S. Yuasa (2012)

Magnetoresistance

MR ratio (RT & low H)

AMR effect

MR = 1~2%

Lord Kelvin

TMR effect

MR = 20~70%

1985GMR effect

MR = 5~15%

T. Miyazaki, J. Moodera J. Slonczewski, L. Berger1996

Device applications

HDD head

Inductive

MR head

GMR head

TMR head MRAM

Memory

Giant TMR effect

MR = 200~1000%

MgO -TMR headSpin Torque

MRAM Microwave, E-control.

devices

A. Fert, P. Grünberg, J. Barnaś

Tunneling – Julliere’s model

Ferromagnetic-electrode 1 Ferromagnetic-electrode 2Insulator

XLII Zjazd Fizyków Polskich, Nanotechnologia, Poznań, 12.09.2013

Magnetic field switching

TMR = 175%

Curent Induced Magnetization Switching - CIMS

(001)MgO

Technology of magnetic nanostructers (TMR)

TEM EDX

L. Yiao, S. van Dijken

P. Wisniowski, T.Stobiecki J. Appl. Phys. 100 (2006) 013906

J. Kanak, T.Stobiecki Vacuum 82 (2008)1057

TMR race

0 5 10 15 20 25 30 35 400

IrMn(111)

nsity [

a) RMS = 0.3 nm b) RMS = 0.6 nm

buffer

80a2_m - IrMn[111]

80b2_m - IrMn[111]

a) b)AFM

XRD – rocking curve

XRD – pole figure

Barrier quality

Sputtering system

0,1 1,0 10,0 100,0 1 000,0 10 000,0

RA [ µm²]

nat ox CAPRES

nat ox patterned

plasma ox CAPRES

plasma ox patterned

Freescale MgO_4

Anelva2006 (MgO+Mg)

Anelva2006 (MgO)

TDK2006

MgO - TMR vs. RA

H. Maehara et al. Applied Physics Express 4 (2011) 033002

J. Wrona, T.Stobiecki, et al. JPC (2010)

Courtesy of

Singulus TIMARISMulti Target Module

Top: Target Drum with 10

rectangular cathodes; Drum

design ensures easy

maintenance;

Bottom: Main part of the

chamber containing LDD

equipment

Oxidation ModuleLow Energy Remote

Atomic Plasma Oxidation;

Natural Oxidation;

Soft Energy Surface

Treatment

Transport Module

(UHV wafer handler)

Soft-Etch Module

(PreClean, Surface

Treatment)

Cassette Module

(according to

Customer request)

Ultra – High – Vacuum Design: Base Pressure 5*10-9 Torr (Deposition Chamber)

High Throughput (e.g. MRAM): 9 Wafer/Hour (1 Depo-Module)

High Effective Up-time: 18 Wafer/Hour (2 Depo-Module)

Sputtering deposition (industrial process)

Magnet Array

Sputter Target

Linear Dynamic Deposition (LDD)

•Leakage field of cathode parallel to wafer travel direction:

Ideal symmetry for magnetic film applications

•Stationary Aligning Magnetic Field (AMF):

AMF can be optimized with cathode

Yoke Yoke

Target Drum Targets

Wafer Travel

Deposition Area

•Short Target-Substrate Distance:

Good thickness uniformity and coating efficiency

•Thickness adjusted by wafer speed:

Precisely control & repeatability

Advantages:

Courtesy of

Wedge technology

position of the wafer

wafer velocity

start velocity

deposition area

constant velocity gradient

J. Wrona et al. Low resistance magnetic tunnel junctions with MgO wedge barrier, ICM 2009.

Sputter Target

• base pressure: p0 510-9 mTorr

• MgO - 4kW, rf magnetron sputtering,

variable Ar pressure 1 – 15 mTorr

• CuN – 4 kW, reactive (Ar+N) magnetron dc

•Ta,Ru,CoFeB – 1.5 kW magnetron dc

• MTJ stack deposited in Singulus

• MgO wedge thickness: 0.6 nm up to 1nm

(slope 0.017 nm/cm)

Multilayer stack

Co70Fe30 2 PL

Ru 0.9

Co40Fe40B20 2.3 RL

wedge MgO

Co40Fe40B20 2.3 FL

CuN 30

Si/SiO2

CuN 50

PtMn 16 AF

buffer

Wafer characterization: microstructure/texture – XRD, AFM

• electrical, magnetic: TMR, RA, MOKE and VSM-loops

Nanopillars

• 3 step e-beam lithography, ion etching, lift-off

SiO substrate2

wedge MgO

Co Fe 270 30

Ru 0.9

Co Fe B 2.340 40 20

PtMn 16

Al O2 3

CuN 30

CoFe 30

Co Fe B 2.340 40 20

0.6 0.7 0.8 0.9 1.0

MgO thickness (nm)

exponential fit

A. Zaleski, W. Skowroński, T.Stobiecki, et al. JAP (2012)

TMR & RA vs. MgO thickness

Nano-e-beam lithography

-1.0 -0.5 0.0 0.5 1.0

tance [O

Voltage [V]

Nanopillars 3 step e-beam lithography, ion etching, lift-off

e-lithography by RAITH system

TMR = 175%

Curent Induced Magnetization Switching - CIMS

Spin Transfer Torque (STT)

Unpolarized

electrons

Polarized

electrons

Transmitted

electrons

Polarizer P Free layer M

Local magnetizationConduction Electrons Transfer of transverse

moment m

Torque

(Spin Torque ST)

ST tends to align M (anti-)parallel to P

Electron

Magnetization dynamics LLG

precession damping

L(andau) L(ifszic) G(ilbert) dynamics

dmeff Mm

VolMMmm

VolM SS

precession dampingSTT

Spin Transfer Torque (STT)

STT – CIMSSpin Transfer Torque Curent Induced Magnetization Switching

I = ICritical

-1.0 -0.5 0.0 0.5 1.0

2 1 nm MgO

0.9 nm MgO

0-19 N

I (mA)

-1.0 -0.5 0.0 0.5 1.0

I (mA)

experiment theory

W.Skowroński, T.Stobiecki et al. PRB 87, 094419 (2013)

STT components

Micromagnetic switching (OOMMF)

I= 7 mA, P=0.7 α=0.01 M. Czapkiewicz

-2000 -1000 0 1000 2000160

TMR = 100%

RA= 3.5 m2

Angle 60°

Field [Oe]

Bias tee

GHz generator

Voltage/current

sourcemeter

Lock-in

amplifier

Freq sweep

2 – 10 GHz

Measurement setup for spin dynamics

•MTJ sample placed in the magnetic field and tilted by a certain degree

•Amplitude modulated RF signal supplied to the MTJ through a bias tee

•Small DC signal measured using lock-in detection

130 nm

230 nm

leads 50

Nanopillar with coplanar wave guide

ST-FMR oscillations

• MTJ supplied with a RF signal

• Generates DC voltage at tunable

resonant frequency

• Inverse effect applicable as

microwave generator

3 4 5 6 7

Frequency (GHz)

External magnetic

field (Oe)

-1.5 -1.0 -0.5 0.0 0.5 1.0 1.50

Kittel formula fit

Field (kOe)

W.Skowrońsk, T.Stobiecki et al. PRB 87, 094419 (2013)

Bias tee

GHz generator

Voltage/current

sourcemeter

Lock-in

amplifier

Freq sweep

2 – 10 GHz

1RFmix I

VoleMI

sin 22

dVe ||

|| sin2

dVe sin

Wang et al. PRB 79, 224416, 2009

6 7 8 9

0 .25 V

-0.1 V

-0.25 V

Frequency (GHz)

6 7 8 9-8

S + A fit

Frequency (GHz)

Torkances and torques

•Vmix is derived from the LLGS equation

•S and A are symmetric and asymmetric

lorentzians:

Torque (STT) components

W.Skowroński, T.Stobiecki, S. Van Dijken et al. PRB 87, 094419 (2013)

in plane componentOut of plane component

-1.0 -0.5 0.0 0.5 1.0

I (mA)

experiment theory

W.Skowroński, T.Stobiecki, S. Van Dijken et al. PRB 87, 094419 (2013)

STT components

Ab initio band calcultions

Heiliger, Stiles PRL 100, 186805, 2008

Measurement setup for spin dynamics

W. Skowroński

STT – CIMSSpin Transfer Torque Curent Induced Magnetization Switching

I = ICritical

1,0 1,5 2,0 2,5

Frequency (GHz)

DC current

-0.1 mA

-0.5 mA

-1.5 mA

-1.7 mA

-1.8 mA

W.Skowroński, T.Stobiecki, S. van Dijkenet al. APEX 5, 063005 (2012)

Zero-magnetic field STO

• Use of:– Perpendicular anisotropy of thin CoFeB on MgO

– Ferromagnetic coupling between FL and RL (0.9 nm MgO)

• In-plane STT-induced oscillations

W.Skowroński, T.Stobiecki, S.Van Dijken et al. APEX 5, 063005 (2012)

Deriving the critical current

J- current density (A/m2)

S-Area (m2)

e- electron charge (A*s)

ħ– Planck constant (J*s)

0Ms – Magnetization (T)

Hk- Anisotropy field (A/m)

V- Volume (m3)

Dimension less

efficiency factor Dimension less

energy loss rate

Energy of free layer

Available energy

energyVHM volumeKS

JSenergy

surface

2volumeSeffeffective VMH

35 ± 1136 ± 7

P APAP PStability factor

-1.0 -0.5 0.0 0.5 1.0

AP 1 ms

2.7 ms

7.3 ms

19.8 ms

53.7 ms

Voltage (V)

200 2 4 6 8 10 12 14 16 18

ln (tp/t

+ AP to P

Jc - P to AP

TkJJ P

• results of MTJ with 0.96 nm thick MgO barrier

• Jc0 estimation

CIMS – critical current Jc0

W.Skowroński, T.Stobiecki et al. JAP 107, 093917 (2010)

0 5 10 15 20 25-5.5

= -5,27 MA/cm2

JC = J

C0[1-(k

BT/E)ln(

0 4 8 12 16 20-20

10 Jc AP ->P

ln (tp/t

JC P -> AP

C VHMe

Critical current

4eff a SH H M

M out of plane

2eff a SH H M M in plane

M out of plane

M in plane

Perpendicular magnetisation reduces the critical switching current!

In our case 3 times!

M in plane

CoFeB/MgO/CoFeB with perpendicular

magnetic anisotropy PMA

Everspin officially announces the world's first ST-MRAM chip,

will be available in 2013

A couple of days ago we reported that Everspin will start sampling

ST-MRAM chips soon, and today we got official word from Everspin

that they are now sampling the first ST-MRAM chip. The

EMD3D064M is a 64Mb DDR3 device, and select customers are

already evaluation samples. Everspin is currently targeting the

enterprise SSD market, to complement flash memory.

HDD- head

J. Kanak

Voltage-tunable magnetic field sensor

• CoFeB/MgO based MTJ field sensor

• Bias voltage changes the perpendicular magnetic anisotropy

• Thin CoFeB layer

• Thick MgO (1.35 nm) – no STT present

W.Skowroński, P.Wiśniowski et al. APL 101, 192401, 2012

Voltage-induced dynamics

• MTJ with thick MgO (2nm) – high resistance, low current

• Voltage-induced FMR precession in MTJ

• Bias voltage affect magnetic anisotropy – change in the resonance

frequencyW. Skowroński, T. Stobiecki et al. MMM2013

-300 -200 -100 0 100 200

Field (Oe)

Bias voltage (V)

1.0 1.5 2.0 2.5

0.2 -1

Voltag

)Frequency (GHz)

Bias voltage (V):

MRAM example

Existing MRAM – up to 64 MB capacity CMOS technology

Obstacle – critical current density

Toshiba, ISSCC conference (2010)

Conclusions

• Successful fabrication of MTJ nanopillars with a

ultrathin MgO barrier

• Spin Transfer Torque (STT) effect in MTJs was

quantitavely analysed

• Current Induced Magnetization Switching (CIMS) and

and ST- oscillations in nanopillars were demonstrated

• Voltage-Induced magnetic anisotropy – tunable sensor

and RF-signal detection were demonstrated

AcknowledgementsAGH Department of Electronics

M. Czapkiewicz (simulations)

J. Kanak (structure)

W. Skowronski (e-lithography Uni Bielefeld, TMR, CIMS, Spin-diode,)

J. Wrona (deposition in Singulus, CIPT-capres measurements)

IMP PAS

J. Dubowik

H. Głowiński

AMU Poznań

J. Barnaś (theory)

P. Balaz

P. Ogrodnik

Jean-Philippe Ansermet

A. Vetro

Singulus AG

J. Langer

B. Ocker

W. Maass

University of Bielefeld

K. Rott (e-lithography training for WS)

G. Reiss,

Aalto University, Espoo, Finland

S. van Dijken

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