Laser damage resistant nematic liquid crystal cell
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Laser damage resistant nematic liquid crystal cellZ. Raszewski, W. Piecek, L. Jaroszewicz, L. Soms, J. Marczak, E. Nowinowski-Kruszelnicki, P. Perkowski, J.Kedzierski, E. Miszczyk, M. Olifierczuk, P. Morawiak, and R. Mazur Citation: Journal of Applied Physics 114, 053104 (2013); doi: 10.1063/1.4816682 View online: http://dx.doi.org/10.1063/1.4816682 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/114/5?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Electro-optical response of the combination of two twisted nematic liquid crystal cells in series and theapplicability of the extended Jones matrix AIP Advances 1, 042167 (2011); 10.1063/1.3669514 Vertical alignment nematic liquid crystal cell controlled by double-side in-plane switching with positive dielectricanisotropy liquid crystal J. Appl. Phys. 104, 084515 (2008); 10.1063/1.3005878 Application of nanoparticle-induced vertical alignment in hybrid-aligned nematic liquid crystal cell Appl. Phys. Lett. 91, 141103 (2007); 10.1063/1.2794007 Electrically assisted self-confinement and waveguiding in planar nematic liquid crystal cells Appl. Phys. Lett. 77, 7 (2000); 10.1063/1.126859 Dynamic flow and switching bistability in twisted nematic liquid crystal cells Appl. Phys. Lett. 71, 596 (1997); 10.1063/1.119804
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Laser damage resistant nematic liquid crystal cell
Z. Raszewski,1,a) W. Piecek,1 L. Jaroszewicz,1 L. Soms,2 J. Marczak,1
E. Nowinowski-Kruszelnicki,1 P. Perkowski,1 J. Kedzierski,1 E. Miszczyk,3
M. Olifierczuk,1 P. Morawiak,1 and R. Mazur11Military University of Technology, 00-908 Warsaw, Poland2Vavilov State Optical Institute, 199034 Sankt Petersburg, Russian Federation3Radom University of Technology, 26-600 Radom, Poland
(Received 8 May 2013; accepted 11 July 2013; published online 5 August 2013)
There exists a problem in diagnostics of a dense plasma (so-called Thomson diagnostics). For this
purpose, the plasma is illuminated by series of high energy laser pulses. Such pulses are generated
by several independent lasers operating sequentially, and these pulses are to be directed along an
exactly the same optical path. In this case, the energy of each separate pulse is as large as 3 J, so it
is impossible to generate a burst of such pulses by a single laser. In this situation, several
independent lasers have to be used. To form optical path with k¼ 1.064 lm and absolute value of
the energy of laser pulse through of 3 J, a special refractive index matched twisted Nematic Liquid
Crystal Cell (NLCC) of type LCNP2 with switching on time sON smaller than 5 ls might be
applied. High laser damage resistance of NLCC and short sON can be fulfilled by preparation of
liquid crystal cells with Liquid Crystal Mixture (LCM), well tuned to twisted nematic electro-
optical effect, and well tuned all optical interfaces (Air – Antireflection – Quartz Plate – Electrode
– Blocking Film – Aligning Layer – LCM – Aligning Layer – Blocking Film – Electrode – Quartz
Plate – Antireflection – Air). In such LCNP2 cell, the transmission is higher than 97% at
k¼ 1.064 lm, as it is presented by Gooch and Tarry [J. Phys. D: Appl. Phys. 8, 1575 (1975)]. The
safe laser density energy is about 0.6 J/cm2 for a train of laser pulses (k¼ 1.064 lm, pulse duration
10 ns FWHM, pulse repetition rate 100 pps, train duration 10 s), so the area of liquid crystal cell
tolerating 3 J through it shall be as large as 5 cm2. Due to the presence of two blocking film layers
between electrodes, LCNP2 can be driven by high voltages. Switching on time smaller than
sON¼ 5 ls was obtained under 200 V switching voltage. VC 2013 AIP Publishing LLC.
[http://dx.doi.org/10.1063/1.4816682]
I. INTRODUCTION
There exists a problem of diagnostics of a dense plasma
(so-called Thomson diagnostics). For this purpose, one illu-
minates the plasma by series of laser pulses with pretty high
energy. These pulses are generated by several independent
lasers operating sequentially, and these pulses are to be
directed along an exactly the same optical path.
To form optical path with k¼ 1.064 lm and absolute
value of the energy of laser pulse through of 3 J, a special
Nematic Liquid Crystal Cell (NLCC) with switching on time
sON smaller than 5 ls might be applied. In our NLCC cell, the
problem of laser damage of liquid crystal (LC)-cells under
multi-Joule pulse energy can be solved by making NLCC cells
with large area cross section, in order to decrease the density
of laser energy to levels lower that the laser damage threshold.
We know that, for well proved existing LCD technolo-
gies with transparent Indium Tin Oxide (ITO) electrodes (so
called Dense ITO – D-ITO) obtained by standard deposition,
the safe laser energy density is about 0.2 J/cm2 for
k¼ 1.064 lm in nanosecond range duration,2 so the area of
LC-cell tolerating 3 J throughput shall be as large as 15 cm2.
To decrease the area to 5 cm2 of LC-cell tolerating 3 J
throughput, new type of refractive index matched Twisted
NLCC of type LCNP2 was developed and manufactured
under cooperation between Military University of
Technology (MUT) in Poland and Vavilov State Optical
Institute (VSOI) in Russia. To do it, we try to increase the
Laser Damage Resistance (LDR) of LCNP2 cells to a level
higher than 0.6 J/cm2.
II. CONFIGURATION OF TWISTED NEMATIC (TN)STRUCTURE
The conventional TN structure (with H¼ p/2) consists of
a nematic LC layer of thickness d confined between two paral-
lel glass plates. The bounded surfaces are treated, so that all
directors n in the LC layer are parallel to the bounding surfaces
but undergo a p/2 rotation when one goes from one surface to
the other. The LC material for such device should have a posi-
tive both optical Dn ¼ ne � no and dielectric De ¼ ejj � e?anisotropies. ne and no are extraordinary and ordinary refrac-
tive indices while ejj and e? are the parallel and perpendicular
components of electric permittivity tensor e of applied LC.
When polarized light of wavelength k incidents nor-
mally on TN structure and the plane of polarization of this
light is perpendicular to n at the entrance of TN layer, and
the transmission axes of “ideal” analyzer is parallel to n
at the exit surface, the transmission T of TN cell can be
given by1,3a)E-mail: [email protected]
0021-8979/2013/114(5)/053104/6/$30.00 VC 2013 AIP Publishing LLC114, 053104-1
JOURNAL OF APPLIED PHYSICS 114, 053104 (2013)
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T ¼ 1�sin2 p
2
ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi1þ 2dDn
k
� �2s2
435
1þ 2dDn
k
� �2: (1)
The maximums of transmission T of the above so called
“positive TN mode” appear when
2dDn
k¼
ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi4k2 � 1p
; (2)
where k¼ 1, 2, 3, … describes the order of TN maximum.
When dDn ¼ kffiffiffi3p
=2 ¼ 0:921 (as one can see in Fig. 1),
the first TN maximum (k¼ 1) appears at light wavelength
k¼ 1.064 lm.
Switching on time sON of TN structure under driving
voltage U of the conventional TN structure (with H¼p/2) is
defined by the following equation:4,5
sON /cd2
e0DeU2 � p2KTN; (3)
where e0 stands for the electric permittivity of free space and
c is the rotational viscosity of LC. The factor of KTN
describes elasticity of LC for the transition from the twisted
(TN) to the homeotropic (HT) orientation.
III. LIQUID CRYSTAL MIXTURE FOR NEMATIC LIQUIDCRYSTAL CELLS (LCNP1 AND LCNP2)
Taking into account the above considerations, the LC cell
with both high (as possible) transmission (See Fig. 1,
T> 98% appears for dDn ¼ 0:92160:100) and short (as pos-
sible) switching on time sON can be developed by using pas-
sive TN mode working in the first interference maximum. On
the other hand, the switching on time sON of the TN LC cell is
decreased not only by decreasing both the rotational viscosity
c and the thickness d of TN cell but also by an optimized bal-
ance of reduced elastic constant KTN and high dielectric ani-
sotropy De. To increase dielectric anisotropy De of liquid
crystal mixture (LCM) for LCNP, the larger percentage of po-
lar LC components should be added to working LC mixture.
Polar LCs generally show higher rotational viscosity c than
“neutral” LCs at similar clearing temperature. As the result of
it, LCM with higher De shows higher KTN and c. Since the
product dDn has to be kept constant (0.921 for first TN maxi-
mum) to obtain high T, LCM with high Dn is absolutely nec-
essary to decrease switching on sON time.
Developed in MUT, LCMs6,7 containing isothiocyanato
tolane and isothiocyanato terphenyl liquid crystals are distin-
guished by relatively high optical anisotropies. Due to our
experiences,4,8–10 we established a new LCM (with Dn¼ 0.37
at k¼ 1.064 lm) for d¼ 2.5 lm thick LCNP1 (or LCNP2) cell
working in the first TN interference maximum at k¼ 1.064 lm.
The temperature range of nematic phase of LCM is very broad
(from �12 �C to þ136 �C). Fig. 2 shows temperature depend-
ence of e||(T) and e?(T) at f¼ 1.0 kHz, and Fig. 3 shows disper-
sion of optical anisotropy Dn(k) at 25 �C for LCM. The LDR11
of LCM for the action of a train of laser pulses with
k¼ 1.064 lm, pulse duration 10 ns, pulse repetition rate 100
pps, and train duration 10 s was estimated as high as 9.8 J/cm2.
The main material parameters of LCM for LCNP1 and
LCNP2 are gathered in Table I.
IV. TECHNOLOGY OF LCNP1 AND LCNP2 CELLS
A. Refractive index matched twisted NLCC: LCNP1
To decrease (in the first approach) the area of LC-cell
(to increase LDR) tolerating 3 J throughput, new type of
FIG. 1. Calculated from Eq. (1): transmission T versus wavelength k of TN
structure (in passive mode) for the value of dDn¼ 0.921. First maximum of
transmission at k¼ 1.064 lm.
FIG. 2. Temperature dependence of e||(T) and e?(T) for LCM measured at
frequency f¼ 1.0 kHz.
FIG. 3. Dispersion of optical anisotropy Dn(k) for LCM at 25 �C.
053104-2 Raszewski et al. J. Appl. Phys. 114, 053104 (2013)
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refractive index matched twisted NLCC (LCNP1) was devel-
oped. The layout of LCNP1 (or LCNP2) with its main
dimensions is given in Fig. 4.
To increase transmission of twisted NLCC (as high as
possible), one needs to minimize or remove the following
sources of transmitted light losses:
(a) finite absorption of liquid crystal layer,
(b) finite absorption of aligning (polyimide) layers,
(c) finite absorption of glass substrates,
(d) relatively high absorption of conductive ITO layers,
(e) relatively high reflections on all LCM interfaces (air –
glass – ITO – LCM – ITO – glass – air).
Our investigations of absorptions of aligned LCM in LC
cells show that the absorption of LCM is the minor one. The
absorption A (A< 5%/45 lm) of 3 lm layer of LCM film is
practically unmeasured one. The LDR of LCM (at
k¼ 1.064 lm, 10 ns) is rather high (9.8 J/cm2).
To reduce absorptions of glass substrates, fused silica
windows (further called Quartz Plates) of D¼ 1.5 mm and
n¼ 1.45 at k¼ 1.064 lm12 were used. The LDR of Quartz
Pates (QP) (at k¼ 1.064 lm, 10 ns) was not smaller than
50 J/cm2. To minimize light diffusion at boundary surfaces
of QP, both sides of QP were mechanically polished with op-
tical quality. After this, the flatness of QP was better than k/4
at 633 nm and wedge-shaped character of QP was smaller
than 8 in.
To lower optical losses caused by conductive D-ITO
electrodes and Fresnel reflective losses caused by interfaces
between D-ITO layers and QP substrates, the QP substrates
were covered by index matched Porous ITO (P-ITO) layers
by using vacuum deposition technique13 The refractive index
of P-ITO layer is given by the special combination of refrac-
tive index of air (n¼ 1.00) and D-ITO layer (n¼ 1.90). We
estimated that the D-ITO layers of thicknesses from 15 nm
(500 X/�) to 180 nm (10 X/�) have got refractive indices of
n¼ 1.90 at k¼ 1.064 lm. (There are no distinct “thickness
interference fringes” in Fig. 5 at the region of k¼ 1.064 lm,
what can mean that no¼ 1.90 of LCM is the same as
n¼ 1.90 for D-ITO layer.) Three P-ITO films were deposited
on three QP substrates. Fig. 6 shows the transmissions T as
the function of wavelengths k for QP substrates covered by
different P-ITO layers with sheet resistances of 400 X/�,
1000 X/�, and 1200 X/�, respectively. The above sheet
resistances of P-ITO layers were obtained not only by chang-
ing thicknesses of evaporated layers but by proper modifica-
tions of other depositions parameters as well. In Fig. 6, one
can notice that T of QP covered by P-ITO1200 is just the
same as it was for clean QP substrate. It means that refractive
TABLE I. Material data of LCM mixture for LCNP1 and LCNP2 at 25 �C.
Optical anisotropy Dn (for k¼ 1.064 lm) 0.37
Ordinary refractive index no (for k¼ 1.064 lm) 1.53
Dielectric anisotropy De (for f¼ 1.5 Hz) 17.0
Perpendicular component of electric permittivity tensor e? 4.7
Reduced elastic constant KTN 16.8 pN
Rotational viscosity c 337 mPa s
Laser damage threshold at k¼ 1.064 lm, 10 ns 9.8 J/cm2
FIG. 4. The layout of LCNP1 (and LCNP2).
FIG. 5. Transmission T versus wavelength k of 2.6TN500 cell (d¼ 2.6 lm)
with D-ITO (500 X/�) electrodes filled with LCM (Dn¼ 0.37 at
k¼ 1.064 lm). T(k) was recorded when TN cell with LCM was placed
between crossed polarizers and the plane of polarization of incident light
was perpendicular to n at the entrance of TN layer. Transmission has got the
first maximum (79.1%) at 1.064 lm.
FIG. 6. Transmission T versus wavelength k for “pure” QP substrate as well
as covered by P-ITO layers: P-ITO400 with sheet resistance of 400 X/�,
P-ITO1000 with 1000 X/�, and P-ITO1200 with 1200 X/�. At k¼ 1.064 lm,
transmission equals, respectively, 91.3% for P-ITO400, 92.4% for
P-ITO1000, 93.1% for P-ITO1200, and 93.5% for QP without any ITO layer.
053104-3 Raszewski et al. J. Appl. Phys. 114, 053104 (2013)
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index of P-ITO1200 is about 1.54 and Fresnel reflective does
not appear at the interface between QP (n¼ 1.54) substrate
and P-ITO1200 (n� 1.54) transparent conductive layer.
To avoid direct electrical contact of transparent P-ITO
electrode with LCM (characterized by no¼ 1.53 at
k¼ 1.064 lm), thin SiO2 Blocking Film (BF) was evaporated
on P-ITO layer. Since refractive indices n of P-ITO and BF
are nearly the same, BF of thickness d¼ k/(4 n) causes that
Fresnel reflections do not appear at the interface between
P-ITO (n¼ 1.54) and BF (n� 1.54) and then at the next
interface between BF (n¼ 1.54) and LCM (no � 1.54).
To remove the relatively high reflections on external
surfaces of LCNP1, outside of QP (with P-ITO and BF layers
on the other side) was armed with standard (bilayer: Al2O3-
MgF3), vacuum deposited antireflection (AR) coatings aimed
at k¼ 1.064 lm.
The optical transmission TQP of “pure” QP substrate
(without any layers) is shown in Fig. 7. As one can see,
measured TQP of “pure” QP substrate (TQP¼ 93.4% for
k¼ 1.064 lm) is nearly the same as the theoretical value of
T¼ 93.3%4 calculated for plane parallel dielectric plate from
“pure” QP substrate (type of: JGS3, with refractive index of
n¼ 1.4586 at 588 nm). Transmission TLA of QP substrate with
all proper layers (QP covered by AR, P-ITO, BF, and polyi-
mide (PL), as it is shown in Fig. 8) is shown in Fig. 7 too.
Taking the above into consideration, the refractive index
matched liquid crystal cell LCNP1 (or LCNP2) with high T
was constructed as multilayer sandwich. The schematic
cross-section of LCNP1 is shown in Fig. 8.
Two QP covered by AR, P-ITO, BF, and PL layers fol-
lowed by TN rubbing were sealed by standard operations of
LCD technology. To do it, the thermo adhesive (XN-5 A-C,
Mitsui Chemical, Inc.) was used. To establish the LCNP
cell gap of d¼ 2.5 lm, the glass spacers (PF25, Nippon
Electronic Glass Co.) were applied.
The empty LCNP1 cells were filled with the LCM spe-
cially prepared by IAP (Institute of Applied Physics) MUT
for this purpose. The filling process was carried out in the
LCD vacuum chamber at working temperature of 35 �C.
After filling process, the LCNP cells were air tight sealed by
Special Optical Adhesive delivered by VSOI.
The optical transmission T of 2.4-LCNP1 cell filled with
LCM is shown in Fig. 9. The obtained high transmission
(T¼ 97.6% at k¼ 1.064 lm) is the evidence that LCNP1 cell
can be regarded as really refractive index matched twisted
NLCC for k¼ 1.064 lm.
The results of switching on (sON) time measured in 2.5-
LCNP1 (2.5 lm thick) cell filled with LCM (Dn¼ 0.37 for
k¼ 1.064 lm) at 25 �C are presented in Table II.
The above shows that switching on time sON smaller
than 5 ls in 2.5-LCNP1 cell (2.5 lm thick) filled with LCM
(Dn¼ 0.37 for k¼ 1.064 lm) can be obtained under 200 V
pulses.
B. Laser damage resistance of LCNP1 cell
LCNP1 cells developed and manufactured by MUT
were tested on laser damage resistance in the laboratories of
FIG. 7. Transmissions TQP versus wavelength k of “pure” QP substrate
(without any additional layers) – solid line. Transmission TLA of QP sub-
strate with proper layers (QP covered by AR, P-ITO, BF, and PL layers, as it
is shown in Fig. 8) – dotted line. Both transmissions TQP and TLA were
measured by means of digital spectrophotometer: JASCO V670.
Transmission for k¼ 1.063 lm is, respectively, 93.4% for “pure” QP sub-
strate and 96.4% for QP substrate with all necessary layers.
FIG. 8. The cross-section of refractive index matched twisted NLCC: LCNP1
(or LCNP2), where 1 and 11 are bilayer, dielectric (vacuum deposited) AR
coatings; 2 and 10 are QP; 3 and 9 are transparent D-ITO (for LCNP1 cell) or
P-ITO (for LCNP2 cell) electrodes; 4 and 8 are thin SiO2 BF; 5 and 7 are PL
for homogeneous alignment followed by suitable rubbing; 6 is LCM.
FIG. 9. Transmission T versus wavelength k of 2.4-LCNP1 cell (d¼ 2.4 lm)
filled with LCM (Dn¼ 0.37 at k¼ 1.064 lm). T(k) was recorded when 2.4-
LCNP1 cell with LCM was placed between crossed polarizers, and the plane
of polarization of incident light was perpendicular to n at the entrance of TN
layer. Transmission has got the first maximum (97.6%) at 1.064 lm.
TABLE II. The results of switching on (sON) time measured in 2.5-LCNP1
cell (2.5 lm thick) filled with LCM (Dn¼ 0.37 for k¼ 1.064 lm) at 25 �C.
Driving voltage (V) 20 40 60 80 120 160 200
Switching on time
sON (ms) 0.0210 0.0090 0.0065 0.0057 0.0050 0.0046 0.0043
053104-4 Raszewski et al. J. Appl. Phys. 114, 053104 (2013)
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MUT (Warsaw, Poland) and VSOI (Sankt Petersburg,
Russia). In both cases, the LCNP1 cells were subjected to
the action of a train of laser pulses (k¼ 1.064 lm, pulse du-
ration 10 ns FWHM, pulse repetition rate 100 pps, train dura-
tion 10 ns, the diameter of laser spot on the LCNP1 cell
10 mm). The presence of laser damage was recorded visu-
ally. If no damage was recorded at a given value of pulse
energy, the pulse energy was increased gradually, until the
appearance of the laser breakdown on the surface of LCNP1
cell. The distribution of the density of laser energy across the
laser spot was inhomogeneous; therefore, a local value of
the density of laser energy was measured corresponding the
exact location of the laser damage (breakdown) on the sur-
face of LCNP1 cell, using the 1.4 mm diaphragm. The results
of performed in Sankt Petersburg are given in Table III.
The results obtained in VSOI (gathered in Table III)
shows that the save level of laser damage resistance of
LCNP1 cell can be evaluated as LDR¼ 0.35 J/cm2. The
results obtained in MUT (under the same conditions) eval-
uated the save level of laser damage resistance of LCNP1 as
LDR¼ 0.44 J/cm2. In this situation, the area of LC-cell toler-
ating 3 J throughput shall be not smaller than 8 cm2.
C. Refractive index matched twisted NLCC (LCNP2)
To further decrease the area of LC-cell tolerating 3 J
throughput, new type of refractive index matched twisted
NLCC: LCNP2 was developed and manufactured in MUT.
To increase of LDR of liquid crystal cell, one modifies
LCNP1 by
• increasing sheet resistance of P-ITO electrode from
1200 X/� to 1500 X/�;• replacing (spin-deposited) PL (from Nissan SE 130 with
rather low LDR< 2 J/cm2) homogeneous alignment layers
by (spin-deposited) Nylon 6/6 alignment layer (NL with
robust LDR � 12 J/cm2;14
• increasing purity of LCM and the other LCD fluid’s mate-
rials (by final filtering them to 0.22 lm);• increasing local clean room conditions of LCD technology
(from Class ISO4 to ISO3);• using new velvet roller on new buffing machine specially
designed for LCNP2.
After applying the above modifications, new LCNP2
cell was manufactured in the same way as LCNP1 was
prepared.
New LCNP2 cells were tested on laser damage resist-
ance in the laboratories of MUT. These measurements
(described in Sec. IV B) evaluated the save level of laser
damage resistance of LCNP1 cell as LDR¼ 0.6 J/cm2, so the
area of LC-cell tolerating 3 J throughput can be decreased to
5 cm2. In this situation, the LCNP2 cell (see Fig. 4) with
clean aperture 6.15 cm2 (higher than 5 cm2) can be regarded
as the LC-cell tolerating 3 J throughput.
V. CONCLUSIONS
The results of our investigation show that it is possible
to make liquid crystal cells which can help with plasma diag-
nostic. The most important task to do is synthesis of new ne-
matic liquid crystal with high value of LDR. The most
important technological task to do is using in cells proper po-
rous ITO for electrodes and blocking and antireflection
layers. Our results show that it is possible to obtain fast
enough liquid crystal cell which can tolerate 3 J throughput.
ACKNOWLEDGMENTS
This work has been done in 2012 under financial support
of the Polish Ministry of Sciences and Higher Education,
Key Project POIG.01.03.01-14-016/08 “New Photonic
Materials and Their Advanced Application.”
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TABLE III. Test results of laser damage resistant on LCNP1 cell performed at the laser facility of Nat. Res. Univ. of Information Technologies, Finite
Mechanics and Optics, Sankt Petersburg, Russia.
No.
Pulse
energy
(mJ)
Average
density of laser
energy (J/cm2)
Maximal local
density of laser
energy (J/cm2) Comments
1. 13 0.02 … No damage
2. 52 0.07 0.18 No damage
3. 88 0.11 0.36
Laser breakdown occurred in the place of the maximal local density of laser energy and in an
adjacent location
4. 138 0.18 0.46
The zone of laser spot on the surface of LCNP1 was changed; laser breakdown occurred in the
place of the maximal local density of laser energy
053104-5 Raszewski et al. J. Appl. Phys. 114, 053104 (2013)
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129.21.35.191 On: Mon, 22 Dec 2014 07:03:38
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