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JS Układy bipolarne1 1 JS UCiSW1Układy Cyfrowe i Systemy Wbudowane 1 II. CYFROWEUKŁADYSCALONE dr...
Transcript of JS Układy bipolarne1 1 JS UCiSW1Układy Cyfrowe i Systemy Wbudowane 1 II. CYFROWEUKŁADYSCALONE dr...
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Układy Cyfrowe i Systemy Wbudowane 1
II. CYFROWE UKŁADY SCALONE
dr inż. Jarosław [email protected]
W-4/K-9 pok. 227 C-3
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+UCC
A
B
A·B A
B A+B
+UCC
A
A
Logika diodowo-tranzystorowa
Sygnały napięciowe w logice dodatniej:
• 0 log. ⇔ napięcie ≈ GND
• 1 log. ⇔ napięcie ≈ +UCC
Układy bipolarne
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+UCC
B
A·B
A
+UCC
+5V
B A·B
A T1 T2
T3
T4
4k
1k6
130
1k
Transistor – Transistor Logic (TTL):
NAND DTL:
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Tranzystor MOS (Metal-Oxide-Semiconductor)Structure:
n+
S G D
p-substrate
GND
n+
Induced channel:
Resistive (linear) operation: Saturation:
n+
S G D
p-substrate
GND
GND
VGS > VT VDS = 0
n+
n-channel
n+
S G D
p-substrate
GND
GND
VGS > VT VDS < VGS – VT
n+ n+
S G D
p-substrate
GND
GND
VGS > VT VDS > VGS – VT
n+
Układy unipolarne
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Logika MOS
G
S
D
NEMOS
(z kanałem wzbogacanym,
Enhanced, norm. OFF)
G
S
D
NDMOS
(z kanałem zubożanym,
Depleted, norm. ON)
SRCH
D
G
A·B
+VDD
A
RL
B
A+B
+VDD
B
RL
A
+VDD
A
A
RL
• Uproszczony dwustanowy model rezystancyjny:
RL >> RCH
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Bramki CMOS (Complementary MOS)
P(E)MOS – ON dla WE = L N(E)MOS – ON dla WE = H
+VDD
A A
+VDD
A A
2
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+VDD
A·B
A
B
+VDD
A+B
A
B
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),,()(
),,()(
cbaFcbafF
cbaFcbacbacbafF
NMOSDN
PMOSUP
=+==
=+=++=+==
Uogólnienie: bramki AOI (And–Or–Invert) / OAI (Or–And–Invert)
+VDD
(a+b)·c
a
b
c
a b
c
• 1 BR (bramka równoważna) = 1 NAND/NOR 2WE = 4 tranzystory / 2 pary kompl.
• Tu: 6 tranzystorów (3 pary komplementarne) = 1.5 BR
1.5 BR
)()()1Np. OAIcbaf +=
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( )),,(
),,(
cbaFbcafF
cbaFcbabcabcafF
NMOSDN
PMOSUP
=+==
=+=⋅=+==
• Podobnie: 6 tranzystorów (3 pary komplementarne) = 1.5 BR
1.5 BR
+VDD
a+bc
b c
a
b
c
a
)()2Np. AOIbcaf +=
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IC Fabrication Process
(C) Taiwan Semiconductor Manufacturing Co., Ltd.J. Rabaey, A. Chandrakasan, B. Nikolic: Digital integrated circuits
(C) Taiwan Semiconductor Manufacturing Co., Ltd.
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Full custom ASIC
• E.g. Cadence: Virtuoso
• Synopsys: Custom Compiler / Design Compiler
• Mentor (Siemens group): Calibre12
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3-input NAND cell
Standard Cell Libraries
• Np. biblioteka sxlib oprogr. Alliance: (Laboratoire d'Informatique de Paris 6)
Design mapped to cells| Placement| Power routing| Clock tree synthesis
From a tutorial by
C. Batten, Cornell Univ.
| Final design (fully routed, critical path highlited)
• Np. Synopsys Educational 90nm Standard-Cell Libraries i IC Compiler:
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Gate Arrays
Lata 80., 90. …
• S-MOS Systems, SLA6140:
• NEC, Hitachi, Fujitsu…
• Atmel: ATL25 Gate Array ASIC ATL25 Embedded Array ASIC
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Programmable Logic Devices (PLD):
Complex PLD:
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Field Programmable Gate Arrays (FPGA)
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JS UCiSW1Koszty stałeFPGA G.A. S.C.
Training (days) 2 5 5
$400 / day $800 $2 000 $2 000
Workstation $10 000 $10 000 $10 000
Software $1 000 $20 000 $40 000
Design (10k gates)
gates / day 500 200 200
days 20 50 50
$400 / day $8 000 $20 000 $20 000
Production test design 0 5 days 5 days
0 $2 000 $2 000
NRE 0 $30 000 $70 000
masks 0 (3÷4) $10 000 (15+)$50 000
simulation 0 $10 000 $10 000
test 0 $10 000 $10 000
Second source (5days) (5days) (5days)
(projekt „awaryjny”) $2 000 $2 000 $2 000
Total $21 800 $86 000 $146 000
Michael J.S. Smith, ASIC
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JS UCiSW1Koszty jednostkowe
FPGA G.A. S.C. unit
Wafer size 6 6 6 inches
Wafer cost 1 400 1 300 1 500 $
Design size 10k 10k 10k gates
Density 10k 20k 25k gates/cm2
Utilization 60% 85% 100%
Die size 1.67 0.59 0.40 cm2
Die / wafer 88 248 365
Defect density 1.10 0.90 1.00 cm-2
Yield 65% 72% 80%
Die cost 25 7 5 $
Profit margin 60% 45% 50%
Part cost 39 10 8 $
Price / gate 0.39 0.10 0.08 cents
Michael J.S. Smith, ASIC 18
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Wyrównanie:
FPGA vs. Gate Array ≈ 2.000 szt.
Gate Array vs. Standard Cells ≈ 30.000 szt.
10 000
100 000
1 000 000
10 100 1 000 10 000 100 000
SC GA FPGA
[Total $]
[Volume]
Koszt [$] FPGA G.A. S.C.
stały 21 800 86 000 146 000
jednostkowy 39 10 8
Koszt całkowity
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„Time to market” delay
Michael J.S. Smith, ASIC
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Bezpieczniki (Fuses)
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Antybezpieczniki
Actel: PLICE (Programmable Low-Impedance Circuit Element)
QuickLogic: ViaLink
Michael J.S. Smith, ASIC
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EPROM
n+ Source n+ Drain
P-Type Silicon
VPP
VD < VPP
floating gate access gate
thin gate oxide
FAMOS = Floating-gate Avalanche-injection MOS
E2PROM
n+ Source n+ Drain
FLOTOX = FLOating – gate Thin OXide trans.
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Początki: pamięci PROM
D3 D2 D1 D0
0
1
2
255
DE
KO
DE
R
A0
A1
A2
A7
. .
.
.
.
.
.
.
.
.
.
.
.
.
.
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+VDD
I1
IN
T1
+VDD
TK
+VDD
F1
+VDD
FM
WE
WY
Matryca
AND
Matryca
OR
Matryca PLD
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. . . . . .
. . .
T1 TK
połączenia progr.
połączenia progr.
I1 I2 IN . . .
. . . . . .
. . .
F1 FM
. . . . . .
. . .
T1 TK
połączenia progr.
połączenia progr.
I1 I2 IN . . .
. . .
F1
. . .
FM
. . .
I1
IN
TK
FM
T1 T2 T3
F1
. . .
F2 . . .
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PAL(Programmable
Array Logic)
PLE(Programmable Logic Element)
PLA(Programmable
Logic Array)
Matr. AND: Progr. Const. Progr.
Matr. OR: Const. Progr. Progr.
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T0
F0
F1
F2
F3
T1 T2 T7
I0
I1
I2
. . .
Układy PLE
Np. 8x4:
⇔⇔⇔⇔
⇔⇔⇔⇔
O0
O1
O2
O3
OE (output enable)
IN OUT
OE
OE = 1 OUT = IN (0/1)
OE = 0 OUT = Z (HighZ)
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PAL16L8 0 3 4 7 8 11 12 15 16 19 20 23 24 27 28 31
0
7
0 3 4 7 8 1 1 1 2 1 5 1 6 19 20 23 24 27 28 31
8
1 5
16
2 3
24
3 1
3 2
3 9
4 0
4 7
4 8
5 5
5 6
6 3
I0
I1
I3
I4
I5
I6
I7
I8
I2
O8
I/ O7
I / O6
I/O 5
I/O 4
I/O3
I / O2
O1
11 I9
N D
VC C1
2
3
4
5
6
7
8
9
12
13
14
16
17
18
19
1 5
20
16 L8-5 ( -4)
1 0
16 L 8
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0 3 4 7 8 11 12 1 5 1 6 19 20 2 3 24 27 28 3 1
0
7
8
1 5
16
2 3
24
I 0
I1
I 3
I2
O8
I/ O 7
I / O6
VCC 1
2
3
4
1 7
1 8
1 9
2 0
16L8- 5 ( -4) 1 6 L 8
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PAL16R80 3 4 7 8 11 12 15 16 19 20 23 24 27 28 31
0
7
0 3 4 7 8 1 1 1 2 1 5 1 6 1 9 2 0 23 24 27 28 31
8
15
16
23
24
3 1
3 2
3 9
4 0
4 7
4 8
5 5
5 6
6 3
16R8-5 (-4)
2
3
4
5
6
7
8
9
1
18D Q
Q
19
17
16
15
14
13
12
11
O8
O7
O6
O5
O4
O3
O2
O1
OE
V
CLK
I1
I2
I3
I4
I5
I6
I7
I8
D Q
QV
D Q
QV
D Q
QV
D Q
QV
D Q
QV
D Q
QV
D Q
QV
G N D
VCC
1 0
20
16R8 ( 4)
6
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0 3 4 7 8 11 12 15 16 19 20 23 24 27 28 31
0
7
8
15
16
23
24
16R8-5 (-4)
2
3
4
1
18D Q
Q
19
17
16
O8
O7
O6
O5V
CLK
I1
I2
I3
D Q
QVD Q
D Q
QV
VCC20
16R8 ( 4)
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0
3
4
7
8
1 1 1 2
1 5
1 6
1 9
2 0
2 3
2 4
2 7
2 8
3 1
0
7
8
1 5
1 6
2 3
2 4
3 1
3 2
1 6 R 6 - 5 ( - 4 )
2
3
4
1
1 8 D
Q
Q
1 9
1 7
1 6
1 5
I / O 8
O 7
O 6
O 5
O
V
C L K
I 1
I 2
I 3
I 4
D
Q
Q V
D Q
Q V
D Q
V C C
5
2 0 1 6 R 6
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0
1
9
SP
AR0 3 4 7 8 11 12 15 16 19 20 23 24 27 28 31 32 35 36 39 40 43
10
20
21
0 3 4 7 8 1 1 1 2 1 5 1 6 1 9 2 0 2 3 2 4 2 7 28 31 32 35 36 39 40 43
CLK/I0 1
(2)
2
(3)I1
3
(4)I2
4
( 5 )I3
5
( 6 )
I4
6
( 7 )
I5
7
( 9 )
I6
8
( 1 0 )
I7
9
( 1 1 )I8
1 0
( 1 2 )I9
1 1
( 1 3 )
I 1 0
1 2
( 1 4 )
G N D
24
(28) VCC
(16)
I1311
34
33
48
4 9
6 5
6 6
8 2
8 3
9 7
9 8
1 1 0
1 1 1
1 2 1
1 2 2
1 3 0
1 3 1
I/O923
(27)
8I/O22
(26)
I/O21
(25)7
I/O20
(24)
6
5I/O19
(23)
4I/O18
(21)
I/O17
(20)
3
I/O16
(19)
2
I/O15
(18)
1
I/O14
(17)
0
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
Q
Q
Q
Q
Q
Q
Q
Q
Q
Q
16564E-006
PALCE22V10
0
1
9
AR0 3 4 7 8 11 12 15 16 19 20 23 24 27 28 31 32 35 36 39 40 43
10
20
21
CLK/I0 1
(2)
2
(3)I1
3
(4)I2
4
( 5 )I3
24
(28) VCC
34
33
48
4 9
I/O923
(27)
8I/O22
(26)
I/O21
(25)7
I/O20
(24)
6
5I/O19
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D
SP
ARQ
0
1
1 0
1 1
0 0
0 1
D AR
1 0
1 1
Q
Q
Q
Q
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Complex PLD
Glo
bal inte
rcon
ne
ct m
atr
ix
PA
L
I/O I/O I/O
MC
MC
MC
PA
L
I/O I/O I/O
MC
MC
MC
PA
L
I/O MC
MC
MC
I/O I/O
PA
L
I/O MC
MC
MC
I/O I/O
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Arch. XC9500XL
7
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Arch. XC9500XL
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VIN
8
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Boundary scan logic:
Joint Test Action Group (JTAG) IEEE Std. 1149.1
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State diagram for the TAP controller