· 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów...

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Transcript of  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów...

Page 1:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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- I -

Katalog

elementów SMD

Gdañsk 2002

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- II -

Materia³y zebra³ i opracowa³: Stefan Rompa

Korekta: Marian Bundt

Projekt ok³adki: Dariusz Skulski

Rysunki: Stefan Rompa

„Katalog elementów SMD” to wykaz prawie 12 000 oznaczeñ kodowych elementów montowanych powierzch-niowo (SMD) najbardziej znanych i najczêœciej spotykanych œwiatowych producentów pó³przewodników. Wykaz tenobok oznaczenia kodowego, producenta i pe³nej nazwy elementu zawiera równie¿ krótki opis charakteryzuj¹cy jegorodzaj (budowê), typ obudowy, jej rysunek oraz konwencjonalny odpowiednik, o ile taki zosta³ wskazany przezproducenta. Podane informacje umo¿liwiaj¹ ogólne rozpoznanie wybranego elementu. Katalog bêdzie z pewnoœci¹przydatny dla ka¿dego elektronika praktyka: i hobbysty, i profesjonalisty.

Wydawca:

Wies³aw Haligowski80-416 Gdañskul. Gen. Hallera 169/17� (0-58) 344-32-57email: [email protected]

© Wies³aw Haligowski 2002

Druk i oprawa:Gdañskie Zak³ady Graficzne S.A., 80-164 Gdañsk, ul. Trzy Lipy 3

ISBN-83-912757-2-8

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- III -

1. Wstêp

Oddajemy do r¹k Czytelników pierwsze wydanie katalogu elementów montowanych powierzchniowo (SMD),wystêpuj¹cych w najró¿niejszym sprzêcie elektronicznym. Wiêkszoœæ elektroników - praktyków, która zetknê³a siêz elementami SMD wie, jakim problemem jest prawid³owe zidentyfikowanie miniaturowego elementu oznaczonegoza pomoc¹ jednej lub kilku liter i/lub cyfr albo kolorów. Oznakowanie kodowe elementów SMD ci¹gle nie jest zunifi-kowane, wobec czego takie same oznakowanie zastosowane przez ró¿nych producentów oznacza ca³kiem innyelement. Jakby tego by³o ma³o, bardzo czêsto ten sam producent oznacza tym samym kodem ca³kiem ró¿ne ele-menty, a prawid³owym kluczem do zidentyfikowania danego elementu staje siê typ i gabaryty obudowy.

Prezentowany katalog pe³ni rolê klucza, pozwalaj¹cego na zidentyfikowanie pe³nej nazwy i rodzaju elementuprawie 12 000 kodów elementów SMD. Dodatkowo w katalogu zawarto informacje, które mog¹ byæ pomocne przyrozpoznawaniu konkretnego elementu takie, jak: nazwê producenta, typ i rysunek obudowy, gabaryty. Dla niektó-rych elementów podano równie¿ odpowiednik konwencjonalny (element przewlekany). Tych odpowiedników jeststosunkowo ma³o, poniewa¿ zamieszczono je tylko dla tych elementów, dla których zosta³ on wskazany przez pro-ducenta.

Wœród prawie 12 000 oznaczeñ kodowych znajduje siê oko³o 200 kodów elementów konwencjonalnych, w ta-kich obudowach, jak: TO-3, TO-220, TO-252, itp. Chocia¿ elementy te nie maj¹ nic wspólnego z tytu³owymi ele-mentami SMD, zdecydowaliœmy siê na umieszczenie i podanie ich pe³nej nazwy, wyczerpuj¹c w ten sposób tematoznaczeñ kodowych pó³przewodników.

„Katalog elementów SMD” jest kontynuacj¹ a jednoczeœnie uzupe³nieniem naszej serii wydawniczej katalogów:„Diody, diaki - odpowiedniki”, „Tranzystory - odpowiedniki - cz.1” (tranzystory, których nazwa rozpoczyna siê cy-fr¹), „Tranzystory - odpowiedniki - cz.2” (tranzystory, których nazwa rozpoczyna siê liter¹) i „Uk³ady scalone -odpowiedniki”. Na podstawie pe³nej nazwy zidentyfikowanego elementu SMD odnalezionej w niniejszym katalogu-kluczu, w tych w³aœnie katalogach znaleŸæ mo¿na bardziej szczegó³owe dane dotycz¹ce interesuj¹cego elementu.

¯ywimy g³êbok¹ nadziejê, ¿e niniejszy katalog oka¿e siê przydatny dla wszystkich, którzy maj¹ jak¹kolwiek stycz-noœæ z elementami SMD. Bêdziemy wdziêczni za wszelkie uwagi odnoœnie naszych wydawnictw.

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- IV -

2. Jak korzystaæ z katalogu?

Oznaczenia kodowe elementów SMD u³o¿one s¹ w kolejnoœci alfanumerycznej. Na ka¿dej stronie katalogu, wgórnej linii, umieszczony jest kod pierwszego i ostatniego elementu z danej strony. Informacje o ka¿dym elemenciepodane s¹ w oœmiu kolumnach:

Kod - oznaczenie kodowe elementu SMD,Producent - skrócona nazwa producenta,Opis - skrót okreœlaj¹cy rodzaj elementu,Typ - pe³na nazwa (pe³ne oznaczenie) elementu,Obudowa - nazwa typu obudowy,Wymiary - wymiary obudowy w milimetrach (jeœli któryœ wymiar ró¿ni siê od wymiarów standardowych),Rysunek - odsy³acz do numeru rysunku obudowy,Odpowiednik - nazwa odpowiednika konwencjonalnego (o ile taki jest wskazany przez producenta).

Ze wzglêdu na ograniczon¹ iloœæ miejsca, w kolumnach „Producent” i „Opis” u¿yto skrótów. Pe³ne nazwyproducentów wyjaœniono w rozdziale pt. „Skróty nazw producentów”, a skróty oznaczaj¹ce rodzaj elementu objaœnionow rozdziale „Objaœnienia skrótów rodzaju elementu”.

W kolumnie „Obudowa” zamieszczono znak “~” okreœlaj¹cy podobieñstwo, w przypadkach niejednoznacznoœcidotycz¹cej nazwy obudowy przy wyraŸnym podobieñstwie do okreœlonego typu obudowy.

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3. Objaœnienia skrótów nazw producentów

AEG - AEG - Telefunken, NiemcyEuropa - inne firmy europejskieFagor - Fagor Electrotecnica, S. Coop., HiszpaniaFerranti - Ferranti Electronics, Ltd., Wielka BrytaniaFujitsu - Fujitsu, Ltd., JaponiaGeneral - General Electric Corporation, USAGIE - General Instrument Corporation, USAHitachi - Hitachi, Ltd. (Electronic Devices Group), JaponiaITT - ITT Semiconductors, USA; ITT Intermetall, NiemcyKEC - KEC, Korea Electronics Corporation, Ltd, KoreaMatsushita - Matsushita Denshi Kogyo Corporation (Electronics Corporation), JaponiaMitsubishi - Mitsubishi Electric Corporation, JaponiaMotorola - Motorola Semiconductor Products, Inc., USANEC - Nippon Electric Corporation, Ltd. (NEC), JaponiaNational - National Semiconductor Corporation, USAOrigin - Origin Electric Corporation, Ltd., JaponiaPhilips - Philips Semiconductors, HolandiaRCA - RCA Corporation (Solid State Division), USARohm - Rohm Corporation, Ltd., JaponiaSamsung - Samsung Semiconductor, KoreaSanyo - Tokyo Sanyo Electric Corporation, Ltd., JaponiaSGS - SGS – ATES Componenti Elettronici S. p. A., W³ochyShindengen - Shindengen Electric Mfg. Corporation, Ltd, JaponiaSiemens - Siemens AG, NiemcySiliconix - Siliconix, Inc., USA

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- VI -

Sony - Sony Corporation, JaponiaSupertex - Supertex, Inc., USAThomson - ST, SGS – Thomson Microelectronics, Francja, W³ochyToshiba - Toshiba – Tokyo Shibaura Electric Corporation, Ltd, JaponiaValvo - Valvo GmbH, NiemcyZetex - Zetex, Wielka Brytania

4. Objaœnienia skrótów rodzaju elementu

C-Di - dioda pojemnoœciowaDiode - diodaGaAs-FET - tranzystor polowy galowo-arsenowyGaAs-FET-IC - n tranzystorów polowych galowo-arsenowychGaAs-N-FET - tranzystor polowy galowo-arsenowy z kana³em typu NGaAs-N-FET-d - tranzystor polowy galowo-arsenowy z kana³em typu N zubo¿anymGaAs-Sensor - galowo-arsenowy czujnik temperaturyGe-Di - dioda germanowaLED - dioda œwiec¹caLIN-IC - uk³ad liniowyMOS-FET - tranzystor polowy MOSMOS-N-FET - tranzystor polowy MOS z kana³em typu NMOS-N-FET-d - tranzystor polowy MOS z kana³em typu N zubo¿anymMOS-N-FET-e - tranzystor polowy MOS z kana³em typu N wzbogacanymMOS-N-FET-e* - tranzystor polowy MOS z kana³em typu N wzbogacanym i wbudowan¹ diod¹ zabezpiecza-

j¹c¹ bramkêMOS-P-FET - tranzystor polowy MOS z kana³em typu PMOS-P-FET-e - tranzystor polowy MOS z kana³em typu P wzbogacanym

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MOS-P-FET-e* - tranzystor polowy MOS z kana³em typu P wzbogacanym i wbudowan¹ diod¹ zabezpieczaj¹- c¹ bramkê

N-FET - tranzystor polowy z kana³em typu NN-FET (IC) - n tranzystorów polowych z kana³em typu NN-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor krzemowy typu NPNP-FET - tranzystor polowy z kana³em typu PPIN-Di - dioda PINPUT - dwubazowy tranzystor programowalnyRef-Z-IC - dioda referencyjna (wysokostabilna dioda Zenera)Si-Br - mostkowy prostownik krzemowySi-Di - dioda krzemowaSi-Gl - prostownik krzemowySi-N - tranzystor krzemowy typu NPNSi-N (IC) - n tranzystorów krzemowych typu NPNSi-N/P - 2 tranzystory krzemowe: typu NPN + typu PNPSi-N/P+R - 2 tranzystory krzemowe: typu NPN + typu PNP + rezystorSi-N+Di - tranzystor krzemowy typu NPN z diod¹Si-N+Di+R - tranzystor krzemowy typu NPN z diod¹ i rezystoremSi-N+N-FET - tranzystor krzemowy typu NPN + tranzystor polowy z kana³em typu NSi-N+P - 2 tranzystory krzemowe: typu NPN + typu PNPSi-N+P-Darl - 2 tranzystory krzemowe: typu NPN + typu PNP w uk³adzie DarlingtonaSi-N+R - tranzystor krzemowy typu NPN z rezystoremSi-N-Darl - tranzystor Darlingtona typu NSi-N-Darl+Di - tranzystor Darlingtona typu N z diod¹Si-P - tranzystor krzemowy typu PNPSi-P/N - 2 tranzystory krzemowe: typu PNP + typu NPNSi-P/N+R - 2 tranzystory krzemowe: typu PNP + typu NPN + rezystorSi-P+Di - tranzystor krzemowy typu PNP z diod¹Si-P+R - tranzystor krzemowy typu PNP z rezystorem

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Si-P-Darl - tranzystor Darlingtona typu PSi-Sensor - czujnik krzemowySi-St - stabilizator krzemowySi-Varistor - warystor krzemowyThy - tyrystorTriac - triakZ-Di - dioda ZeneraZ-Di, Z-IC - stabilizator scalonyZ-IC - regulator (stabilizator) napiêcia

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- 1 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AA

A Hitachi GaAs-N-FET 2SK1617 18

A Hitachi C-Di HVS303 DO-34 9a

A Hitachi C-Di HVU12 SOD-323 1,7 19

A Matsushita Si-P 2SB1462 SC-75 1,6 10

A Matsushita Si-P 2SB1462J SC-81 1,6 10

A Matsushita Si-P 2SB766 SOT-89 11

A Matsushita MOS-N-FET-d 3SK301 SOT-143 13

A Matsushita MOS-N-FET-d 3SK305 SOT-343 2 13

A Matsushita Si-Di MA2H735 3,8 19

A Matsushita Si-Di MA2S11 SOD-323 1,7 19

A Rohm Si-Di 1SS400 SOD-523 1,3 19

A Sanyo N-FET 2SK1066 SOT-23 10

A Siemens C-Di BA892 (SCD-80) 1,3 19

A Siemens Si-Di BAT14-098 SOD-123

A Toshiba Si-N-Darl 2SC2532 SOT-23 10

A Toshiba GaAs-FET 2SK1619 18

A05 Thomson Si-Di SMBYW02-50 SOD-6 6,4 19

A1 General Si-N D70.G05T1 SOT-89 11

A1 Hitachi Si-Di HSB124SJ SOT-323 2 10

A1 Hitachi Si-Di HSM124S SOT-23 10

A1 NEC MOS-P-FET-e 2SJ243 SS Mini 1,6 10

A1 Philips Si-Di BAW56 SOT-23 10 BAW62(2x)

A1 Rohm Si-P+R FMA1A SOT-153 14

A1 Rohm Si-P+R UMA1N SOT-353 2 14

A1 Siemens MOS-N-FET-d CFY10 18

A1 Siemens MOS-N-FET-d CFY19-18 SOT-173 17

A1 Siliconix MOS-P-FET-e Si2301DS SOT-23 10

A1 Toshiba Si-Di 1SS272 SOT-143 13

A1 Toshiba Si-Di 1SS308 SOT-153 14

A1 Toshiba Si-Di HN2D01F SOT-163 15

A1 Philips Si-Di BAW56W SOT-323 2 10

A1 Motorola Si-Di BAW56 SOT-23 10

A1 Siemens Si-Di BAW56 SOT-23 10 BAW62(2x)

A1 Valvo Si-Di BAW56 SOT-23 10

A … A1

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikA.A1 Toshiba Si-Di 1SS382 SOT-343 2 13

A10 Rohm Si-P+R FMA10A SOT-153 14

A10 Rohm Si-P+R UMA10N SOT-353 2 14

A10 Thomson Si-Di SMBYW02-100 SOD-6 6,4 19

A10PH Philips Z-Di BZX79-A10 DO-35 9

A11 National Si-Di MMBD1501A SOT-23 10

A11 Rohm Si-P+R FMA11A SOT-153 14

A11 Rohm Si-P+R UMA11N SOT-353 2 14

A11PH Philips Z-Di BZX79-A11 DO-35 9

A12PH Philips Z-Di BZX79-A12 DO-35 9

A13 National Si-Di MMBD1503A SOT-23 10

A13 NEC Si-Di 1SS220 SOT-23 10

A13PH Philips Z-Di BZX79-A13 DO-35 9

A14 National Si-Di MMBD1504A SOT-23 10

A14 NEC Si-Di 1SS221 SOT-23 10

A15 National Si-Di MMBD1505A SOT-23 10

A15 NEC Si-Di 1SS222 SOT-23 10

A15 Thomson Si-Di SMBYW02-150 SOD-6 6,4 19

A15PH Philips Z-Di BZX79-A15 DO-35 9

A16 NEC Si-Di 1SS223 SOT-23 10

A16 Zetex C-Di ZC934A SOT-23 10

A16PH Philips Z-Di BZX79-A16 DO-35 9

A17 Sanyo N-FET 2SK436-A17 SOT-23 10

A17 Zetex C-Di ZC933A SOT-23 10

A18 Sanyo N-FET 2SK436-A18 SOT-23 10

A18PH Philips Z-Di BZX79-A18 DO-35 9

A19 Sanyo N-FET 2SK436-A19 SOT-23 10

A1s Siemens Si-Di BAW56S SOT-363 2 15

A1s Siemens Si-Di BAW56W SOT-323 2 10

A2 Ferranti Si-Di ZC833A SOT-23 10

A2 Hitachi Si-Di HSM221C SOT-23 10

A2 Motorola Si-Di MMBD2836 SOT-23 10

A2 Philips Si-Di BAT18 SOT-23 10 BA482

A2 Philips Si-Di PMBD2836 SOT-23 10

A2 Rohm Z-Di EDZ5.1B SC-79 1,3 19

.A1 … A2

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- 3 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AA2 Rohm Si-P+R FMA2A SOT-153 14

A2 Rohm Z-Di UDZ5.1B SOD-323 1,7 19

A2 Rohm Z-Di UDZS5.1B SOD-323 1,7 19

A2 Rohm Si-P+R UMA2N SOT-353 2 14

A2 Siemens Si-Di BAT18 SOT-23 10 BA482

A2 Siemens GaAs-N-FET-d CFY10-22 17

A2 Siemens GaAs-N-FET CFY19-22 SOT-173 17

A2 Siemens GaAs-N-FET CFY30 SOT-143 13

A2 Siliconix MOS-N-FET-e Si2302DS SOT-23 10

A2 Thomson Si-Di BAT18 SOT-23 10 BA482

A2 Toshiba Si-Di 1SS309 SOT-153 14

A2 Toshiba Si-Di HN1D01F SOT-163 15

A20 Sanyo N-FET 2SK1066-20 SOT-323 2 10

A20 Sanyo N-FET 2SK436-A20 SOT-23 10

A20 Thomson Si-Di SMBYW02-200 SOD-6 6,4 19

A20PH Philips Z-Di BZX79-A20 DO-35 9

A21 Sanyo N-FET 2SK1066-21 SOT-323 2 10

A21 Sanyo N-FET 2SK436-A21 SOT-23 10

A22 Sanyo N-FET 2SK1066-22 SOT-323 2 10

A22 Sanyo N-FET 2SK436-A22 SOT-23 10

A22PH Philips Z-Di BZX79-A22 DO-35 9

A24PH Philips Z-Di BZX79-A24 DO-35 9

A27 Philips Si-N-Darl PXTA27 SOT-89 11

A27PH Philips Z-Di BZX79-A27 DO-35 9

A2V4PH Philips Z-Di BZX79-A2V4 DO-35 9

A2V7PH Philips Z-Di BZX79-A2V7 DO-35 9

A3 Ferranti Si-Di BAS16 SOT-23 10

A3 KEC Si-Di KDS120 SOT-323 2 10

A3 KEC Si-Di KDS181 SOT-23 10

A3 Motorola Si-Di MMBD2835 SOT-23 10

A3 NEC Si-Di 1S2835 SOT-23 10

A3 Philips Si-Di 1PS300 SC-70 2 10

A3 Philips Si-Di PMBD2835 SOT-23 10

A3 Rohm Si-P+R FMA3A SOT-153 14

A3 Rohm Si-P+R UMA3N SOT-353 2 14

A2 … A3

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAA3 SGS Si-Di BAT17 SOT-23 10 BA481

A3 Siemens Si-Di BAT17 SOT-23 10 BA481

A3 Siliconix MOS-P-FET-e Si2303DS SOT-23 10

A3 Toshiba Si-Di 1SS181 SOT-23 10

A3 Toshiba Si-Di 1SS300 SOT-323 2 10

A3 Toshiba Si-Di 1SS306 SOT-143 13

A3 Toshiba Si-Di 1SS360 SS Mini 1,6 10

A3 Toshiba Si-Di HN1D02F SOT-163 15

A3 Philips Si-Di BAT17 SOT-23 10 BA481

A3 Valvo Si-Di BAT17 SOT-23 10

A306 Thomson Si-Di STTA306B TO-252 8

A30PH Philips Z-Di BZX79-A30 DO-35 9

A33PH Philips Z-Di BZX79-A33 DO-35 9

A36PH Philips Z-Di BZX79-A36 DO-35 9

A39PH Philips Z-Di BZX79-A39 DO-35 9

A3T Philips Si-Di 1PS181 SOT-23 10

A3V0PH Philips Z-Di BZX79-A3V0 DO-35 9

A3V3PH Philips Z-Di BZX79-A3V3 DO-35 9

A3V6PH Philips Z-Di BZX79-A3V6 DO-35 9

A3V9PH Philips Z-Di BZX79-A3V9 DO-35 9

A4 AEG C-Di BB404A 10 BB804

A4 Hitachi Si-Di HSB2836 SOT-323 2 10

A4 Hitachi Si-Di HSM2836C SOT-23 10

A4 ITT C-Di BB404A 10 BB804

A4 Mitsubishi Si-Di MC2836 SOT-23 10

A4 Mitsubishi Si-Di MC2846 SOT-323 2 10

A4 NEC Si-Di 1S2836 SOT-23 10

A4 Philips Si-Di BAV70 SOT-23 13 BAW62(2X)

A4 Philips Si-Di BAV70W SOT-323 2 10

A4 Rohm Si-P+R FMA4A SOT-153 14

A4 Rohm Si-P+R UMA4N SOT-353 2 14

A4 Siliconix MOS-N-FET-e Si2304DS SOT-23 10

A4 Toshiba Si-Di 1SS319 SOT-143 13

A4 Toshiba Si-Di HN1D03F SOT-163 15

A4 Motorola Si-Di BAV70 SOT-23 10

A3 … A4

http://www.serwis-elektroniki.com.pl/

Page 14:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 5 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AA4 Siemens Si-Di BAV70 SOT-23 10 BAW62(2X)

A4 Valvo Si-Di BAV70 SOT-23 10

.A4 Toshiba Si-Di 1SS383 SOT-343 2 13

A43PH Philips Z-Di BZX79-A43 DO-35 9

A44 Philips Si-Di BAV74 SOT-23 10

A46 Thomson Si-Di BAR46A SOT-23 10

A47PH Philips Z-Di BZX79-A47 DO-35 9

A4s Siemens Si-Di BAV70S SOT-363 2 15

A4s Siemens Si-Di BAV70W SOT-323 2 10

A4V3PH Philips Z-Di BZX79-A4V3 DO-35 9

A4V7PH Philips Z-Di BZX79-A4V7 DO-35 9

A5 Hitachi C-Di HVC317B SOD-523 1,3 19

A5 Motorola Si-Di MMBD2837 SOT-23 10

A5 NEC Si-Di 1S2837 SOT-23 10

A5 Philips PUT BRY61 SOT-23 10 BRY56

A5 Philips Si-Di PMBD2837 SOT-23 10

A5 Rohm Si-P+R FMA5A SOT-153 14

A5 Rohm Z-Di UDZ27B SOD-323 1,7 19

A5 Rohm Si-P+R UMA5N SOT-353 2 14

A5 Siliconix MOS-P-FET-e Si2305DS SOT-23 10

A5 Toshiba Si-Di 1SS391 SC-61 13

A5 Toshiba Si-Di HN2D02FU SOT-363 2 15

A5 Valvo PUT BRY61 SOT-23 10

.A5 Toshiba Si-Di 1SS384 SOT-343 2 13

A51 Philips Thy BRY62 SOT-143 13 BRY39

A51 Valvo Thy BRY62 SOT-143 13

A51PH Philips Z-Di BZX79-A51 DO-35 9

A56PH Philips Z-Di BZX79-A56 DO-35 9

A5V1PH Philips Z-Di BZX79-A5V1 DO-35 9

A5V6PH Philips Z-Di BZX79-A5V6 DO-35 9

A6 Hitachi Si-Di HSB2838 SOT-323 2 10

A6 Hitachi Si-Di HSM2838C SOT-23 10

A6 Mitsubishi Si-Di MC2838 SOT-23 10

A6 Mitsubishi Si-Di MC2848 SOT-323 2 10

A6 Motorola Si-Di MMBD2838 SOT-23 10

A4 … A6

http://www.serwis-elektroniki.com.pl/

Page 15:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 6 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAA6 NEC Si-Di 1S2838 SOT-23 10

A6 Philips Si-Di BAS16W SOT-323 2 10

A6 Philips Si-Di BAS216 ~SOD-123 2 19

A6 Philips Si-Di PMBD2838 SOT-23 10

A6 Rohm Si-P+R FMA6A SOT-153 14

A6 Rohm Si-P+R UMA6N SOT-353 2 14

A6 Siliconix MOS-N-FET-e Si2306DS SOT-23 10

A6 Toshiba Si-Di 1SS399 SC-61 13

A6 Motorola Si-Di BAS16 SOT-23 10

A6 Philips Si-Di BAS16 SOT-23 10 BAW62

A6 Siemens Si-Di BAS16 SOT-23 10 BAW62

A61 Philips Si-Di BAS28 SOT-143 13 BAW62(2x)

A61 SGS Si-Di BAS28 SOT-143 13 BAW62(2x)

A61 Siemens Si-Di BAS28 SOT-143 13 BAW62(2x)

A61 Valvo Si-Di BAS28 SOT-143 13

A62PH Philips Z-Di BZX79-A62 DO-35 9

A68PH Philips Z-Di BZX79-A68 DO-35 9

A6A Motorola Si-P+R MMUN2111 SOT-23 10

A6B Motorola Si-P+R MMUN2112 SOT-23 10

A6C Motorola Si-P+R MMUN2113 SOT-23 10

A6D Motorola Si-P+R MMUN2114 SOT-23 10

A6E Motorola Si-P+R MMUN2115 SOT-23 10

A6F Motorola Si-P+R MMUN2116 SOT-23 10

A6G Motorola Si-P+R MMUN2130 SOT-23 10

A6H Motorola Si-P+R MMUN2131 SOT-23 10

A6J Motorola Si-P+R MMUN2132 SOT-23 10

A6K Motorola Si-P+R MMUN2133 SOT-23 10

A6L Motorola Si-P+R MMUN2134 SOT-23 10

A6s Si-Di BAS16S SOT-363 2 15

A6s Si-Di BAS16W SOT-323 2 10

A6V2PH Philips Z-Di BZX79-A6V2 DO-35 9

A6V8PH Philips Z-Di BZX79-A6V8 DO-35 9

A7 Mitsubishi Si-Di MC2840 SOT-23 10

A7 Mitsubishi Si-Di MC2850 SOT-323 2 10

A7 NEC Si-Di 1SS123 SOT-23 10

A6 … A7

http://www.serwis-elektroniki.com.pl/

Page 16:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 7 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AA7 Philips Si-Di BAV99 SOT-23 10 BAW62(2x)

A7 Philips Si-Di BAV99W SOT-323 2 10

A7 Rohm Si-Di BAV99U SOT-323 2 10

A7 Rohm Si-P+R FMA7A SOT-153 14

A7 Rohm Si-P+R UMA7N SOT-353 2 14

A7 Siliconix MOS-P-FET-e Si2307DS SOT-23 10

A7 Motorola Si-Di BAV99 SOT-23 10

A7 Siemens Si-Di BAV99 SOT-23 10 BAW62(2x)

A7 Valvo Si-Di BAV99 SOT-23 10

A75PH Philips Z-Di BZX79-A75 DO-35 9

A7s Siemens Si-Di BAV99S SOT-363 2 15

A7s Siemens Si-Di BAV99W SOT-323 2 10

A7V5PH Philips Z-Di BZX79-A7V5 DO-35 9

A8 Hitachi Si-Di HSM223C SOT-23 10

A8 Philips Si-Di BAS19 SOT-23 10 BAV19

A8 Rohm Si-P+R FMA8A SOT-153 14

A8 Rohm Si-P+R UMA8N SOT-353 2 14

A8 SGS Si-Di BAS19 SOT-23 10 BAV19

A8 Siemens Si-Di BAS19 SOT-23 10 BAV19

A8 Siliconix MOS-N-FET-e Si2308DS SOT-23 10

A8 Valvo Si-Di BAS19 SOT-23 10

A81 Philips Si-Di BAS20 SOT-23 10 BAV20

A81 SGS Si-Di BAS20 SOT-23 10 BAV20

A81 Siemens Si-Di BAS20 SOT-23 10 BAV20

A81 Valvo Si-Di BAS20 SOT-23 10

A82 Philips Si-Di BAS21 SOT-23 10 BAV21

A82 SGS Si-Di BAS21 SOT-23 10 BAV21

A82 Siemens Si-Di BAS21 SOT-23 10 BAV21

A82 Valvo Si-Di BAS21 SOT-23 10

A8A Motorola Si-N+R MMUN2211 SOT-23 10

A8B Motorola Si-N+R MMUN2212 SOT-23 10

A8C Motorola Si-N+R MMUN2213 SOT-23 10

A8D Motorola Si-N+R MMUN2214 SOT-23 10

A8E Motorola Si-N+R MMUN2215 SOT-23 10

A8F Motorola Si-N+R MMUN2216 SOT-23 10

A7 … A8F

http://www.serwis-elektroniki.com.pl/

Page 17:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 8 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAA8G Motorola Si-N+R MMUN2230 SOT-23 10

A8H Motorola Si-N+R MMUN2231 SOT-23 10

A8J Motorola Si-N+R MMUN2232 SOT-23 10

A8K Motorola Si-N+R MMUN2233 SOT-23 10

A8L Motorola Si-N+R MMUN2234 SOT-23 10

A8V2PH Philips Z-Di BZX79-A8V2 DO-35 9

A9 Hitachi Si-Di HSB123 SOT-323 2 10

A9 Hitachi Si-Di HSM123 SOT-23 10

A9 Rohm Si-P+R FMA9A SOT-153 14

A9 Rohm Si-P+R UMA9N SOT-353 2 14

A9 Siliconix MOS-P-FET-e Si2309DS SOT-23 10

A9 Toshiba Si-Di 1SS294 SOT-23 10

A9 Toshiba Si-Di 1SS322 SOT-323 2 10

A9 Valvo Ge-Di AAY60 SOT-23 10

A91 Philips Si-St BAS17 SOT-23 10 BA314

A91 Valvo Si-Di BAS17 SOT-23 10

A9L Matsushita Si-N+R XN1213 SOT-153 14

A9V1PH Philips Z-Di BZX79-A9V1 DO-35 9

AA AEG Si-N BCW60A SOT-23 10

AA Europa Si-N BCW60A SOT-23 10 BC548A

AA Ferranti Si-N BCW60A SOT-23 10

AA Hitachi Si-N 2SD1366-AA SOT-89 11

AA Matsushita Z-Di MA5Z200-L SOD-323 1,7 19

AA Matsushita Si-N+R XN6214 SOT-163 15

AA Matsushita Si-N+R XP6214 SOT-363 2 15

AA Motorola Si-P BCX51 SOT-89 11 BC636

AA NEC Si-P µPA501T SOT-153 14

AA NEC Si-P µPA571T SOT-353 2 14

AA Philips Si-P BCP51 SOT-223 16

AA Philips Si-P BCX51 SOT-89 11 BC636

AA Sanyo Si-P 2SA1415 SOT-89 11

AA Sanyo Si-P 2SA1864 SC-75 1,6 10

AA Siemens Si-P BCP51 SOT-223 16

AA Siemens Si-N BCW60A SOT-23 10

AA Siemens Si-P BCX51 SOT-89 11 BC636

A8G … AA

http://www.serwis-elektroniki.com.pl/

Page 18:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 9 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AAA Thomson Z-Di SMAJ5.0CA DO-214AC 5×2,5 19

AA Toshiba Si-N 2SC4213A SOT-323 2 10

AA Valvo Si-P BCX51 SOT-89 11

AA Zetex C-Di ZMV829A SOD-323 1,7 19

AA1 NEC Si-N 2SC4942-AA1 SOT-89 11

AA2 NEC Si-N 2SC4942-AA2 SOT-89 11

AA3 NEC Si-N 2SC4942-AA3 SOT-89 11

AAA Motorola N-FET MMBF4856 SOT-23 10

AAQ Rohm Si-N 2SD1757K-Q SOT-23 10

AAR Rohm Si-N 2SD1757K-R SOT-23 10

AAS Rohm Si-N 2SD1757K-S SOT-23 10

AAs Siemens Si-Di BAR80 (MW-4) 13

AAs Siemens Si-P BCP51M (SCT-595) ~14

AAX KEC Si-N MMBTA42 SOT-23 10

AB AEG Si-N BCW60B SOT-23 10

AB Europa Si-N BCW60B SOT-23 10 BC548B

AB Hitachi Si-N 2SD1101B SOT-23 10

AB Hitachi Si-N 2SD1366-AB SOT-89 11

AB Matsushita Z-Di MA5Z200-H SOD-323 1,7 19

AB Motorola Si-P BCX51-6 SOT-89 11

AB Motorola Si-P BCX52-10 SOT-89 11 BC638-10

AB Philips Si-P BCX51-6 SOT-89 11

AB Philips Si-P BCX52-10 SOT-89 11 BC638-10

AB Sanyo Si-P 2SA1416 SOT-89 11

AB Siemens Si-P BCX51-6 SOT-89 11

AB Siemens Si-P BCX52-10 SOT-89 11 BC638-10

AB Toshiba Si-N 2SC4213B SOT-323 2 10

AB Valvo Si-P BCX51-6 SOT-89 11

AB Zetex C-Di ZMV830A SOD-323 1,7 19

AB Philips Si-N BCW60B SOT-23 10

AB Siemens Si-N BCW60B SOT-23 10

AB1 NEC Si-N 2SD2425-AB1 SOT-89 11

AB2 NEC Si-N 2SD2425-AB2 SOT-89 11

AB3 NEC Si-N 2SD2425-AB3 SOT-89 11

ABG Toshiba Si-P 2SA1312-GR SOT-23 10

AA … ABG

http://www.serwis-elektroniki.com.pl/

Page 19:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 10 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAABL Toshiba Si-P 2SA1312-BL SOT-23 10

ABX KEC Si-N MMBTA43 SOT-23 10

AC AEG Si-N BCW60C SOT-23 10

AC Europa Si-N BCW60C SOT-23 10 BC548B

AC Hitachi Si-N 2SD1101C SOT-23 10

AC Hitachi Si-N 2SD1366A-AC SOT-89 11

AC Matsushita Z-Di MA5Z220-L SOD-323 1,7 19

AC Matsushita Si-N+R XN1210 SOT-153 14

AC Matsushita Si-N+R XP1210 SOT-353 2 14

AC Motorola Si-P BCX51-10 SOT-89 11 BC636-10

AC Philips Si-P BCP51-10 SOT-223 16

AC Philips Si-P BCX51-10 SOT-89 11 BC636-10

AC Rohm Si-P RXT2907A SOT-89 11

AC Sanyo Si-P 2SA1417 SOT-89 11

AC Siemens Si-P BCP51-10 SOT-223 16

AC Siemens Si-P BCX51-10 SOT-89 11 BC636-10

AC Thomson Z-Di SMAJ10CA DO-214AC 5×2,5 19

AC Valvo Si-P BCX51-10 SOT-89 11

AC Zetex C-Di ZMV831A SOD-323 1,7 19

AC Philips Si-N BCW60C SOT-23 10

AC Siemens Si-N BCW60C SOT-23 10

ACG KEC Si-P KTA1517-G SOT-23 10

ACL KEC Si-P KTA1517-L SOT-23 10

ACL Rohm Si-N 2SC3837K-L SOT-23 10

ACL Rohm Si-N 2SC4725-L SS Mini 1,6 10

ACM Rohm Si-N 2SC3837K-M SOT-23 10

ACM Rohm Si-N 2SC4725-M SS Mini 1,6 10

ACN Rohm Si-N 2SC3837K-N SOT-23 10

ACN Rohm Si-N 2SC4725-N SS Mini 1,6 10

ACO Toshiba Si-P 2SA1313-O SOT-23 10

ACP Rohm Si-N 2SC3837K-P SOT-23 10

ACQ Rohm Si-N 2SC3837K-Q SOT-23 10

ACY Toshiba Si-P 2SA1313-Y SOT-23 10

AD AEG Si-N BCW60D SOT-23 10

AD Europa Si-N BCW60D SOT-23 10 BC548C

ABL … AD

http://www.serwis-elektroniki.com.pl/

Page 20:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 11 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AAD Fagor Z-Di P4SMA-6.8 DO-214AC 5 19

AD Hitachi Si-N 2SD1366A-AD SOT-89 11

AD Matsushita Z-Di MA5Z220-H SOD-323 1,7 19

AD Matsushita Si-P+R XN1110 SOT-153 14

AD Matsushita Si-P+R XP1110 SOT-353 2 14

AD Motorola Si-P BCX51-16 SOT-89 11 BC636-16

AD Philips Si-P BCP51-16 SOT-223 16

AD Philips Si-P BCX51-16 SOT-89 11 BC636-16

AD Rohm Si-P RXT3906 SOT-89 11

AD Sanyo Si-P 2SA1418 SOT-89 11

AD Siemens Si-P BCP51-16 SOT-223 16

AD Siemens Si-P BCX51-16 SOT-89 11 BC636-16

AD Valvo Si-P BCX51-16 SOT-89 11

AD Zetex C-Di ZMV832A SOD-323 1,7 19

AD Philips Si-N BCW60D SOT-23 10

AD Siemens Si-N BCW60D SOT-23 10

ADG KEC Si-N KTC3911-G SOT-23 10

ADL KEC Si-N KTC3911-L SOT-23 10

ADL Rohm Si-N 2SC3838K-L SOT-23 10

ADL Rohm Si-N 2SC4726-L SS Mini 1,6 10

ADM Rohm Si-N 2SC3838K-M SOT-23 10

ADM Rohm Si-N 2SC4726-M SS Mini 1,6 10

ADN Rohm Si-N 2SC3838K-N SOT-23 10

ADN Rohm Si-N 2SC4726-N SS Mini 1,6 10

ADP Rohm Si-N 2SC3838K-P SOT-23 10

ADQ Rohm Si-N 2SC3838K-Q SOT-23 10

AE Fagor Z-Di P4SMA-6.8A DO-214AC 5 19

AE Matsushita MOS-N-FET-d 3SK219 SOT-143 13

AE Matsushita MOS-N-FET-d 3SK268 SOT-343 2 13

AE Matsushita Z-Di MA5Z240-L SOD-323 1,7 19

AE Mitsubishi Si-P 2SA1363-E SOT-89 11

AE Mitsubishi Si-P 2SA1365-E SOT-23 10

AE Motorola Si-P BCX52 SOT-89 11 BC638

AE Philips Si-P BCP52 SOT-223 16

AE Philips Si-P BCX52 SOT-89 11 BC638

AD … AE

http://www.serwis-elektroniki.com.pl/

Page 21:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 12 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAAE Sanyo Si-P 2SA1419 SOT-89 11

AE Siemens Si-P BCP52 SOT-223 16

AE Siemens Si-N BCW60E SOT-23 10

AE Siemens Si-P BCX52 SOT-89 11 BC638

AE Thomson Z-Di SMAJ5.0A DO-214AC 5×2,5 19

AE Valvo Si-P BCX52 SOT-89 11

AE Zetex C-Di ZMV833A SOD-323 1,7 19

AEG Toshiba Si-P 2SA1362-GR SOT-23 10

AEL Rohm Si-N 2SC3839K-L SOT-23 10

AEL Toshiba Si-P 2SA1362-BL SOT-23 10

AEM Rohm Si-N 2SC3839K-M SOT-23 10

AEN Rohm Si-N 2SC3839K-N SOT-23 10

AEO KEC Si-N KTC3883-O SOT-23 10

AEP Rohm Si-P 2SB1424-P SOT-89 11

AEP Rohm Si-N 2SC3839K-P SOT-23 10

AEQ Rohm Si-P 2SB1424-Q SOT-89 11

AEQ Rohm Si-N 2SC3839K-Q SOT-23 10

AER KEC Si-N KTC3883-R SOT-23 10

AER Rohm Si-P 2SB1424-R SOT-89 11

AEs Siemens Si-P BCP52M (SCT-595) ~14

AEY Toshiba Si-P 2SA1362-Y SOT-23 10

AF Europa Si-N BCW60FF SOT-23 10 BC548C

AF Fagor Z-Di P4SMA-7.5 DO-214AC 5 19

AF Matsushita MOS-N-FET-d 2SK220 SOT-143 13

AF Matsushita MOS-N-FET-d 3SK270 SOT-343 2 13

AF Matsushita Z-Di MA5Z240-M SOD-323 1,7 19

AF Mitsubishi Si-P 2SA1363-F SOT-89 11

AF Mitsubishi Si-P 2SA1365-F SOT-23 10

AF Motorola Si-P BCX52-6 SOT-89 11

AF Philips Si-P BCX52-6 SOT-89 11

AF Sanyo Si-P 2SA1575 SOT-89 11

AF Siemens Si-P BCX52-6 SOT-89 11

AF Valvo Si-P BCX52-6 SOT-89 11

AF Zetex C-Di ZMV834A SOD-323 1,7 19

AF Siemens Si-N BCW60FF SOT-23 10

AE … AF

http://www.serwis-elektroniki.com.pl/

Page 22:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 13 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AAF Valvo Si-N BCW60FF SOT-23 10

AFP Rohm Si-N 2SD1781K-P SOT-23 10

AFQ Rohm Si-N 2SD1781K-Q SOT-23 10

AFR Rohm Si-N 2SD1781K-R SOT-23 10

AFX KEC Si-P-Darl MMBTA64 SOT-23 10

AG Europa Si-N BCX70G SOT-23 10 BC547A

AG Fagor Z-Di P4SMA-7.5A DO-214AC 5 19

AG Mitsubishi Si-P 2SA1363-G SOT-89 11

AG Mitsubishi Si-P 2SA1365-G SOT-23 10

AG Motorola Si-P BCX52-10 SOT-89 11 BC638-10

AG Philips Si-P BCP52-10 SOT-223 16

AG Philips Si-P BCX52-10 SOT-89 11 BC638-10

AG Sanyo Si-P 2SA1729 SOT-89 11

AG Siemens Si-P BCP52-10 SOT-223 16

AG Siemens Si-P BCX52-10 SOT-89 11 BC638-10

AG Valvo Si-P BCX52-10 SOT-89 11

AG Zetex C-Di ZMV835A SOD-323 1,7 19

AG Motorola Si-N BCX70G SOT-23 10

AG Philips Si-N BCX70G SOT-23 10

AG Siemens Si-N BCX70G SOT-23 10

AGP Rohm Si-P 2SA1797-P SOT-89 11

AGQ Rohm Si-P 2SA1797-Q SOT-89 11

AGX KEC Si-P-Darl MMBTA63 SOT-23 10

AH Europa Si-N BCX70H SOT-23 10 BC547B

AH Fagor Z-Di P4SMA-8.2 DO-214AC 5 19

AH Hitachi Si-P 2SB1000-AH SOT-89 11

AH Matsushita Z-Di MA5Z240-H SOD-323 1,7 19

AH Matsushita Si-P+R XN1101 SOT-153 14

AH Matsushita Si-P+R XP1101 SOT-353 2 14

AH Motorola Si-P BCX53 SOT-89 11 BC640

AH Philips Si-P BCP53 SOT-223 16

AH Philips Si-P BCX53 SOT-89 11 BC640

AH Sanyo Si-Di 1SS345 SOT-23 10

AH Sanyo Si-P 2SA1730 SOT-89 11

AH Siemens Si-P BCP53 SOT-223 16

AF … AH

http://www.serwis-elektroniki.com.pl/

Page 23:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 14 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAAH Siemens Si-P BCX53 SOT-89 11 BC640

AH Valvo Si-P BCX53 SOT-89 11

AH Zetex C-Di ZMV930 SOD-323 1,7 19

AH Motorola Si-N BCX70H SOT-23 10

AH Philips Si-N BCX70H SOT-23 10

AH Siemens Si-N BCX70H SOT-23 10

AHN Rohm Si-P 2SA1759-N SOT-89 11

AHP Rohm Si-P 2SA1759-P SOT-89 11

AHP Rohm Si-P 2SB1197K-P SOT-23 10

AHQ Rohm Si-P 2SA1759-Q SOT-89 11

AHQ Rohm Si-P 2SB1197K-Q SOT-23 10

AHR Rohm Si-P 2SB1197K-R SOT-23 10

AHs Siemens Si-P BCP53M (SCT-595) ~14

AI Matsushita Z-Di MA5Z270-L SOD-323 1,7 19

AI Matsushita Si-N+R XN1201 SOT-153 14

AI Matsushita Si-N+R XP1201 SOT-353 2 14

AI Sanyo Si-P 2SA1882 SOT-89 11

AI- Hitachi GaAs-N-FET-d 3SK171 SOT-143 13

AIS Sanyo Si-P 2SA1882-S SOT-89 11

AIT Sanyo Si-P 2SA1882-T SOT-89 11

AIU Sanyo Si-P 2SA1882-U SOT-89 11

AIZ Samsung Si-N KSC3125 SOT-23 10

AJ Europa Si-N BCX70J SOT-23 10 BC547B

AJ Hitachi Si-P 2SB1000-AJ SOT-89 11

AJ Motorola Si-P BCX53-6 SOT-89 11

AJ Philips Si-P BCX53-6 SOT-89 11

AJ Sanyo Si-P 2SA1724 SOT-89 11

AJ Siemens Si-P BCX53-6 SOT-89 11

AJ Thomson Z-Di SMAJ15CA DO-214AC 5×2,5 19

AJ Valvo Si-P BCX53-6 SOT-89 11

AJ Zetex C-Di ZMV931 SOD-323 1,7 19

AJ Motorola Si-N BCX70J SOT-23 10

AJ Philips Si-N BCX70J SOT-23 10

AJ Siemens Si-N BCX70J SOT-23 10

AJ2 NEC N-FET 2SK67-AJ2 ~10

AH … AJ2

http://www.serwis-elektroniki.com.pl/

Page 24:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 15 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AAJ3 NEC N-FET 2SK67-AJ3 ~10

AJ4 NEC N-FET 2SK67-AJ4 ~10

AJ5 NEC N-FET 2SK67-AJ5 ~10

AJ5 Sanyo N-FET 2SK443-AJ5 SOT-23 10

AJ6 NEC N-FET 2SK67-AJ6 ~10

AJ6 Sanyo N-FET 2SK443-AJ6 SOT-23 10

AJ7 NEC N-FET 2SK67-AJ7 ~10

AJ7 Sanyo N-FET 2SK443-AJ7 SOT-23 10

AJN Rohm Si-P 2SA1812-N SOT-89 11

AJP Rohm Si-P 2SA1812-P SOT-89 11

AJP Rohm Si-N 2SD1782K-P SOT-23 10

AJQ Rohm Si-P 2SA1812-Q SOT-89 11

AJQ Rohm Si-N 2SD1782K-Q SOT-23 10

AJR Rohm Si-N 2SD1782K-R SOT-23 10

AK Europa Si-N BCX70K SOT-23 10 BC547C

AK Fagor Z-Di P4SMA-8.2A DO-214AC 5 19

AK Hitachi Si-P 2SB1000A-AK SOT-89 11

AK Matsushita Si-P 2SA1738 SOT-23 10

AK Matsushita Si-P 2SA1806 SC-75 1,6 10

AK Matsushita Z-Di MA5Z270-M SOD-323 1,7 19

AK Motorola Si-P BCX53-10 SOT-89 11 BC640-10

AK Philips Si-P BCP53-10 SOT-223 16

AK Philips Si-P BCX53-10 SOT-89 11 BC640-10

AK Sanyo Si-P 2SA1740 SOT-89 11

AK Sanyo N-FET 2SK2539 SOT-23 10

AK Siemens Si-P BCP53-10 SOT-223 16

AK Siemens Si-P BCX53-10 SOT-89 11 BC640-10

AK Valvo Si-P BCX53-10 SOT-89 11

AK Zetex C-Di ZMV932 SOD-323 1,7 19

AK Ferranti Si-N BCX70K SOT-23 10

AK Philips Si-N BCX70K SOT-23 10

AK Siemens Si-N BCX70K SOT-23 10

AK6 Sanyo N-FET 2SK2539-6 SOT-23 10

AK7 Sanyo N-FET 2SK2539-7 SOT-23 10

AK8 Sanyo N-FET 2SK2539-8 SOT-23 10

AJ3 … AK8

http://www.serwis-elektroniki.com.pl/

Page 25:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 16 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAAKP Rohm Si-P 2SB1198K-P SOT-23 10

AKQ Matsushita Si-P 2SA1738-Q SOT-23 10

AKQ Matsushita Si-P 2SA1806-Q SS Mini 1,6 10

AKQ Rohm Si-P 2SB1198K-Q SOT-23 10

AKR Matsushita Si-P 2SA1738-R SOT-23 10

AKR Matsushita Si-P 2SA1806-R SS Mini 1,6 10

AKR Rohm Si-P 2SB1198K-R SOT-23 10

AL Fagor Z-Di P4SMA-9.1 DO-214AC 5 19

AL Hitachi Si-P 2SB1000A-AL SOT-89 11

AL Matsushita Si-P 2SA1748 SOT-323 2 10

AL Matsushita Si-P 2SA1791 SC-75 1,6 10

AL Matsushita Z-Di MA5Z270-H SOD-323 1,7 19

AL Motorola Si-P BCX53-16 SOT-89 11 BC640-16

AL Philips Si-P BCP53-16 SOT-223 16

AL Philips Si-P BCX53-16 SOT-89 11 BC640-16

AL Sanyo Si-P 2SA1338 SOT-23 10

AL Sanyo Si-P 2SA1766 SOT-89 11

AL Siemens Si-P BCP53-16 SOT-223 16

AL Siemens Si-P BCX53-16 SOT-89 11 BC640-16

AL Siemens Si-N BCX70L SOT-23 10

AL Zetex C-Di ZMV933 SOD-323 1,7 19

ALG KEC Si-N KTC3875-G SOT-23 10

ALL KEC Si-N KTC3875-L SOT-23 10

ALM Rohm Si-N 2SC3802K-M SOT-23 10

ALN Rohm Si-N 2SC3802K-N SOT-23 10

ALO KEC Si-N KTC3875-O SOT-23 10

ALP Rohm Si-P 2SA1900-P SOT-89 11

ALP Rohm Si-N 2SC3802K-P SOT-23 10

ALQ Matsushita Si-P 2SA1747-Q SOT-23 10

ALQ Matsushita Si-P 2SA1748-Q SOT-323 2 10

ALQ Matsushita Si-P 2SA1791-Q SS Mini 1,6 10

ALQ Matsushita Si-N 2SC3802K-Q SOT-23 10

ALQ Rohm Si-P 2SA1900-Q SOT-89 11

ALR Matsushita Si-P 2SA1747-R SOT-23 10

ALR Matsushita Si-P 2SA1748-R SOT-323 2 10

AKP … ALR

http://www.serwis-elektroniki.com.pl/

Page 26:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 17 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AALR Matsushita Si-P 2SA1791-R SS Mini 1,6 10

ALR Rohm Si-P 2SA1900-R SOT-89 11

ALs Siemens Si-N BFP405 SOT-343 2 13

ALY KEC Si-N KTC3875-Y SOT-23 10

AM Fagor Z-Di P4SMA-9.1A DO-214AC 5 19

AM Matsushita Si-N 2SC4562 SOT-323 2 10

AM Matsushita Si-N 2SC4656 SC-75 1,6 10

AM Matsushita Z-Di MA5Z300-L SOD-323 1,7 19

AM Motorola Si-P BCX52-16 SOT-89 11 BC638-16

AM Philips Si-P BCP52-16 SOT-223 16

AM Philips Si-P BCX52-16 SOT-89 11 BC638-16

AM Philips Si-N BSS64 SOT-23 10 BSS38

AM Sanyo Si-P 2SA1896 SOT-89 11

AM Siemens Si-P BCP52-16 SOT-223 16

AM Siemens Si-P BCX52-16 SOT-89 11 BC638-16

AM Zetex C-Di ZMV933A SOD-323 1,7 19

AM Motorola Si-N BSS64 SOT-23 10

AM Siemens Si-N BSS64 SOT-23 10 BSS38

AMN Rohm Si-N 2SC4018K-N SOT-23 10

AMP Rohm Si-N 2SC4018K-P SOT-23 10

AMQ Matsushita Si-N 2SC4561-Q SOT-23 10

AMQ Matsushita Si-N 2SC4562-Q SOT-323 2 10

AMQ Matsushita Si-N 2SC4656-Q SS Mini 1,6 10

AMR Matsushita Si-N 2SC4561-R SOT-23 10

AMR Matsushita Si-N 2SC4562-R SOT-323 2 10

AMR Matsushita Si-N 2SC4656-R SS Mini 1,6 10

AMS Sanyo Si-P 2SA1896-S SOT-89 11

AMs Siemens Si-N BFP420 SOT-343 2 13

AMT Sanyo Si-P 2SA1896-T SOT-89 11

AN Europa Si-N BCW60FN SOT-23 10 BC548C

AN Fagor Z-Di P4SMA-10 DO-214AC 5 19

AN Hitachi MOS-N-FET-e* 2SK3287 SOT-23 10

AN Hitachi MOS-N-FET-e* 2SK3289 SOT-323 2 10

AN Matsushita Z-Di MA5Z300-M SOD-323 1,7 19

AN Matsushita Si-N XN1509 SOT-153 14

ALR … AN

http://www.serwis-elektroniki.com.pl/

Page 27:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 18 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAAN Rohm Si-N 2SC2413-AN (MMT) ~10

AN Rohm Si-N 2SC2413K-N SOT-23 10

AN Rohm Si-N 2SC4098-N SOT-323 2 10

AN Sanyo Si-P 2SA1898 SOT-89 11

AN Toshiba Si-N 2SC2532 SOT-23 10

AN Zetex C-Di ZMV934 SOD-323 1,7 19

AN Siemens Si-N BCW60FN SOT-23 10

ANM Rohm Si-N 2SC4061K-M SOT-23 10

ANN Rohm Si-N 2SC4061K-N SOT-23 10

ANP Rohm Si-N 2SC4061K-P SOT-23 10

ANR Sanyo Si-P 2SA1898-R SOT-89 11

ANS Sanyo Si-P 2SA1898-S SOT-89 11

ANs Siemens Si-N BFP450 SOT-343 2 13

AO Europa Si-N BCW60AR SOT-23 10 BC548A

AO KEC Si-N KTC4372-O SOT-89 11

AO Matsushita Z-Di MA5Z300-H SOD-323 1,7 19

AO Matsushita Si-N XN4509 SOT-163 15

AO Siemens Si-N BCW60RA SOT-23 10

AO Toshiba Si-N 2SC2880-O SOT-89 11

AO Toshiba Si-N 2SC4210-O SOT-23 10

AO Valvo Si-N BCW60RA SOT-23 10

AO Zetex C-Di ZMV934A SOD-323 1,7 19

AOs Siemens Si-N BFP490 (SCT-595) ~14

AP Europa Si-N BCW60BR SOT-23 10 BC846

AP Fagor Z-Di P4SMA-10A DO-214AC 5 19

AP Hitachi MOS-P-FET-e* 2SJ575 SOT-23 10

AP Hitachi MOS-P-FET-e* 2SJ576 SOT-323 2 10

AP Matsushita Z-Di MA5Z330-L SOD-323 1,7 19

AP Rohm Si-N 2SC2413-AP (MMT) ~10

AP Rohm Si-N 2SC2413K-P SOT-23 10

AP Rohm Si-N 2SC4098-P SOT-323 2 10

AP Siemens Si-N BCW60RB SOT-23 10

AP Valvo Si-N BCW60RB SOT-23 10

APs Siemens Si-N BFP520 SOT-343 2 13

AQ Fagor Z-Di P4SMA-11 DO-214AC 5 19

AN … AQ

http://www.serwis-elektroniki.com.pl/

Page 28:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 19 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AAQ Matsushita Si-P 2SB1218-Q SOT-323 2 10

AQ Matsushita Si-P 2SB1462-Q SS Mini 1,6 10

AQ Matsushita Si-P 2SB709-Q SOT-23 10

AQ Matsushita Si-P 2SB766-Q SOT-89 11

AQ Matsushita Si-N+R XN121E SOT-153 14

AQ Matsushita Si-N+R XP0121E SOT-353 2 14

AQ Philips Si-P 2PB709Q SOT-23 10

AQ Rohm Si-N 2SC2413-AQ (MMT) ~10

AQ Rohm Si-N 2SC2413K-Q SOT-23 10

AQ Rohm Si-N 2SC4098-Q SOT-323 2 10

AQ Sanyo Si-P 2SA1969 SOT-89 11

AQO KEC Si-N KTC3880-O SOT-23 10

AQP Rohm Si-P 2SB1051K-P SOT-23 10

AQQ Rohm Si-P 2SB1051K-Q SOT-23 10

AQR KEC Si-N KTC3880-R SOT-23 10

AQR Rohm Si-P 2SB1051K-R SOT-23 10

AQY KEC Si-N KTC3880-Y SOT-23 10

AR Europa Si-N BCW60CR SOT-23 10 BC548C

AR Fagor Z-Di P4SMA-11A DO-214AC 5 19

AR Ferranti Si-N BCW60RC SOT-23 10

AR Hitachi Si-N 2SC3338 SOT-89 11

AR Matsushita Si-P 2SB1218-R SOT-323 2 10

AR Matsushita Si-P 2SB1462-R SS Mini 1,6 10

AR Matsushita Si-P 2SB709-R SOT-23 10

AR Matsushita Si-P 2SB766-R SOT-89 11

AR Matsushita Z-Di MA5Z330-M SOD-323 1,7 19

AR Matsushita Si-N+R XN121F SOT-153 14

AR Philips Si-P 2PB709R SOT-23 10

AR Sanyo Si-P 2SA2011 SOT-89 11

AR Siemens Si-N BCW60RC SOT-23 10

AR Valvo Si-N BCW60RC SOT-23 10

AR1 Philips Si-N BSP40 SOT-223 16

AR1 Philips Si-N BSR40 SOT-89 11 BSX46-10

AR1 Valvo Si-N BSR40 SOT-89 11

AR2 Philips Si-N BSP41 SOT-223 16

AQ … AR2

http://www.serwis-elektroniki.com.pl/

Page 29:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 20 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAAR2 Philips Si-N BSR41 SOT-89 11 BSX46-16

AR2 Valvo Si-N BSR41 SOT-89 11

AR3 Philips Si-N BSP42 SOT-223 16

AR3 Philips Si-N BSR42 SOT-89 11 2N3020

AR3 Valvo Si-N BSR42 SOT-89 11

AR4 Philips Si-N BSP43 SOT-223 16

AR4 Philips Si-N BSR43 SOT-89 11 2N3019

AR4 Valvo Si-N BSR43 SOT-89 11

AS Europa Si-N BCW60DR SOT-23 10 BC548C

AS Fagor Z-Di P4SMA-12 DO-214AC 5 19

AS Hitachi Si-N 2SC3380 SOT-89 11

AS Matsushita Si-P 2SB1218-S SOT-323 2 10

AS Matsushita Si-P 2SB1462-S SS Mini 1,6 10

AS Matsushita Si-P 2SB709-S SOT-23 10

AS Matsushita Si-P 2SB766-S SOT-89 11

AS Matsushita Z-Di MA5Z330-H SOD-323 1,7 19

AS Philips Si-P 2PB709S SOT-23 10

AS Philips Si-Di BAT18-05 SOT-23 10

AS Sanyo Si-P 2SA1655 SOT-23 10

AS Sanyo Si-P 2SA2012 SOT-89 11

AS SGS Si-Di BAT18-05 SOT-23 10

AS Siemens Si-Di BAT18-05 SOT-23 10

AS Siemens Si-N BCW60RD SOT-23 10

AS Toshiba Z-IC TA76431F SOT-89 11

AS Valvo Si-N BCW60RD SOT-23 10

AS1 Philips Si-N BSP50 SOT-223 16

AS1 Philips Si-N-Darl+Di BST50 SOT-89 11 BSR50

AS1 Siemens Si-N BSP50 SOT-223 16

AS1 Valvo Si-N-Darl BST50 SOT-89 11

AS2 Philips Si-N BSP51 SOT-223 16

AS2 Philips Si-N-Darl BST51 SOT-89 11 BSR51

AS2 Siemens Si-N BSP51 SOT-223 16

AS2 Valvo Si-N-Darl BST51 SOT-89 11

AS3 Philips Si-N BSP52 SOT-223 16

AS3 Philips Si-N-Darl BST52 SOT-89 11 BSA52

AR2 … AS3

http://www.serwis-elektroniki.com.pl/

Page 30:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 21 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik AAS3 Siemens Si-N BSP52 SOT-223 16

AS3 Valvo Si-N-Darl BST52 SOT-89 11

ASG KEC Si-P KTA1504-G SOT-23 10

ASO KEC Si-P KTA1504-O SOT-23 10

ASY KEC Si-P KTA1504-Y SOT-23 10

AT Fagor Z-Di P4SMA-12A DO-214AC 5 19

AT Hitachi Si-N-Darl 2SD1470 SOT-89 11

AT Philips Si-Di BAT18-06 SOT-23 10

AT Sanyo Si-N 2SC4066 SOT-23 10

AT SGS Si-Di BAT18-06 SOT-23 10

AT Siemens Si-Di BAT18-06 SOT-23 10

AT Siemens Si-N BCW60RE SOT-23 10

AT1 Philips Si-N BSP19 SOT-223 16

AT1 Philips Si-N BST39 SOT-89 11 BF459

AT1 Valvo Si-N BST39 SOT-89 11

AT120A Philips Si-Di BAT120A SOT-223 16

AT120C Philips Si-Di BAT120C SOT-223 16

AT120S Philips Si-Di BAT120S SOT-223 16

AT140A Philips Si-Di BAT140A SOT-223 16

AT140C Philips Si-Di BAT140C SOT-223 16

AT140S Philips Si-Di BAT140S SOT-223 16

AT160A Philips Si-Di BAT160A SOT-223 16

AT160C Philips Si-Di BAT160C SOT-223 16

AT160S Philips Si-Di BAT160S SOT-223 16

AT2 Philips Si-N BSP20 SOT-223 16

AT2 Philips Si-N BST40 SOT-89 11 BF419

AT2 Valvo Si-N BST40 SOT-89 11

ATN Rohm Si-P 2SA1812-N SOT-89 11

ATP Rohm Si-P 2SA1812-P SOT-89 11

AtQ Philips Si-N 2PD1820AQ SC-70 2 10

ATQ Rohm Si-P 2SA1812-Q SOT-89 11

ATQ Rohm Si-N 2SC4326LK-Q SOT-23 10

AtR Philips Si-N 2PD1820AR SC-70 2 10

ATR Rohm Si-N 2SC4326LK-R SOT-23 10

AtS Philips Si-N 2PD1820AS SC-70 2 10

AS3 … AtS

http://www.serwis-elektroniki.com.pl/

Page 31:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 22 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikAATS Rohm Si-N 2SC4326LK-S SOT-23 10

AU Europa Si-N BCX70GR SOT-23 10

AU Fagor Z-Di P4SMA-13 DO-214AC 5 19

AU NEC Si-P 2SB804-AU SOT-89 11

AU Philips Si-Di BAT18-04 SOT-23 10

AU Sanyo Si-P 2SA2014 SOT-89 11

AU SGS Si-Di BAT18-04 SOT-23 10

AU Siemens Si-Di BAT18-04 SOT-23 10

AU Siemens Si-N BCX70RG SOT-23 10

AU Valvo Si-N BCX70RG SOT-23 10

AV Fagor Z-Di P4SMA-13A DO-214AC 5 19

AV NEC Si-P 2SB804-AV SOT-89 11

AV Sanyo Si-P 2SA2015 SOT-89 11

AW Europa Si-N BCX70HR SOT-23 10

AW Fagor Z-Di P4SMA-15 DO-214AC 5 19

AW NEC Si-P 2SB804-AW SOT-89 11

AW Siemens Si-N BCX70RH SOT-23 10

AW Valvo Si-N BCX70RH SOT-23 10

AX Europa Si-N BCX70JR SOT-23 10

AX Fagor Z-Di P4SMA-15A DO-214AC 5 19

AX Ferranti Si-N BCX70RJ SOT-23 10

AX Matsushita Si-P 2SA1739 SOT-323 2 10

AX Matsushita Si-N+R XN2212 SOT-153 14

AX Siemens Si-N BCX70RJ SOT-23 10

AX Thomson Z-Di SMAJ10A DO-214AC 5×2,5 19

AX Valvo Si-N BCX70RJ SOT-23 10

AXQ Matsushita Si-P 2SA1739-Q SOT-23 10

AXR Matsushita Si-P 2SA1739-R SOT-23 10

AY Europa Si-N BCX70RK SOT-23 10

AY Fagor Z-Di P4SMA-16 DO-214AC 5 19

AY KEC Si-N KTC4372-Y SOT-89 11

AY Sanyo Si-N 2SC3392 SOT-23 10

AY Siemens Si-N BCX70RK SOT-23 10

AY Toshiba Si-N 2SC2880-Y SOT-89 11

AY Toshiba Si-N 2SC4210-Y SOT-23 10

ATS … AY

http://www.serwis-elektroniki.com.pl/

Page 32:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 23 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BAY Valvo Si-N BCX70RK SOT-23 10

AZ Fagor Z-Di P4SMA-16A DO-214AC 5 19

AZ Hitachi MOS-P-FET-e 2SJ518 SOT-89 11

AZ Siemens Si-N BCX70RL SOT-23 10

AZO KEC Si-P KTA1505-O SOT-23 10

AZY KEC Si-P KTA1505-Y SOT-23 10

B

B Hitachi GaAs-N-FET 2SK1616 ~SOT-100 18

B Matsushita Si-P 2SB1218A SOT-323 2 10

B Matsushita Si-P 2SB766A SOT-89 11

B Matsushita MOS-N-FET-d 3SK302 SOT-143 13

B Matsushita MOS-N-FET-d 3SK306 SOT-343 2 13

B Matsushita Si-Di MA2H736 3,8 19

B Matsushita Si-Di MA2S728 SOD-323 1,7 19

B Rohm Diode RB520S-30 SOD-523 1,3 19

B Sanyo N-FET 2SK1068 SOT-323 2 10

B Siemens Si-Di BAS16-03W SOD-323 1,7 19

B Siemens Si-Di BAT15-098 SOD-123

B Toshiba GaAs-FET 2SK1325 ~SOT-100 18

B Toshiba Si-Di S5566B DO-41 9

B0 Hitachi C-Di HVC350B SOD-523 1,3 19

B1 General Si-P D71G.05T1 SOT-89 11

B1 Hitachi Si-Di HSM2692 SOT-23 10

B1 Hitachi C-Di HVC355B SOD-523 1,3 19

B1 Hitachi C-Di HVU355B SOD-323 1,7 19

B1 Matsushita Z-Di MAZF033 SOD-323 1,7 19

B1 Matsushita Z-Di MAZN033 SOD-523 1,3 19

B1 NEC MOS-N-FET-e 2SK1824 SS Mini 1,6 10

B1 Rohm Si-P+R IMB1A SOT-163 15

B1 Rohm Si-P+R UMB1N SOT-363 2 15

B10 Rohm Si-P+R IMB10A SOT-163 15

B10 Rohm Si-P+R UMB10N SOT-363 2 15

B10 Sanyo N-FET 2SK545-B10 SOT-23 10

B10100 Motorola Si-Di MBR10100 TO-220 4

AY … B10100

http://www.serwis-elektroniki.com.pl/

Page 33:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 24 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BB1035 GIE Si-Di MBR1035 TO-220 4

B1035 Motorola Si-Di MBR1035 TO-220 4

B1045 GIE Si-Di MBR1045 TO-220 4

B1045 Motorola Si-Di MBR1045 TO-220 4

B1045 Motorola Si-Di MBRF1045 TO-220 Iso 4

B1060 GIE Si-Di MBR1060 TO-220 4

B1060 Motorola Si-Di MBR1060 TO-220 4

B1070 Motorola Si-Di MBR1070 TO-220 4

B1080 Motorola Si-Di MBR1080 TO-220 4

B1090 Motorola Si-Di MBR1090 TO-220 4

B10PH Philips Z-Di BZX79-B10 DO-35 9

B11 Rohm Si-P+R IMB11A SOT-163 15

B11 Rohm Si-P+R UMB11N SOT-363 2 15

B11 Sanyo N-FET 2SK545-B11 SOT-23 10

B110 Motorola Si-Di MBRS1100 DO-214AA 5 19

B1100 Motorola Si-Di MBR1100 SOD-81 9

B11PH Philips Z-Di BZX79-B11 DO-35 9

B12 NEC Si-N 2SC3739-B12 SOT-23 10

B12 NEC Si-N 2SC4173-B12 SOT-323 2 10

B12 Sanyo N-FET 2SK545-B12 SOT-23 10

B12PH Philips Z-Di BZX79-B12 DO-35 9

B13 NEC Si-N 2SC3739-B13 SOT-23 10

B13 NEC Si-N 2SC4173-B13 SOT-323 2 10

B130 Motorola Si-Di MBRS130 DO-214AA 5 19

B13PH Philips Z-Di BZX79-B13 DO-35 9

B14 NEC Si-N 2SC3739-B14 SOT-23 10

B14 NEC Si-N 2SC4173-B14 SOT-323 2 10

B14 Rohm Si-P+R IMB14A SOT-163 15

B140 Motorola Si-Di MBRS140 DO-214AA 5 19

B15 NEC Si-N NTM2222A SOT-23 10

B150 Motorola Si-Di MBR150 SOD-81 9

B1535 GIE Si-Di MBR1535CT TO-220 4

B1535 Motorola Si-Di MBR1535CT TO-220 4

B1545 GIE Si-Di MBR1545CT TO-220 4

B1545 Motorola Si-Di MBR1545CT TO-220 4

B1035 … B1545

http://www.serwis-elektroniki.com.pl/

Page 34:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 25 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BB1545 Motorola Si-Di MBRF1545CT TO-220 Iso 4

B1545T Motorola Si-Di MBRB1545CT TO-263 8

B15PH Philips Z-Di BZX79-B15 DO-35 9

B16 Rohm Si-P+R IMB16 SOT-163 15

B160 Motorola Si-Di MBR160 SOD-81 9

B1635 GIE Si-Di MBR1635 TO-220 4

B1635 Motorola Si-Di MBR1635 TO-220 4

B1645 GIE Si-Di MBR1645 TO-220 4

B1645 Motorola Si-Di MBR1645 TO-220 4

B16PH Philips Z-Di BZX79-B16 DO-35 9

B17 Rohm Si-P+R IMB17A SOT-163 15

B170 Motorola Si-Di MBR170 SOD-81 9

B180 Motorola Si-Di MBR180 SOD-81 9

B18PH Philips Z-Di BZX79-B18 DO-35 9

B190 Motorola Si-Di MBR190 SOD-81 9

B1O Samsung Si-N KSC2715-O SOT-23 10

B1R Samsung Si-N KSC2715-R SOT-23 10

B1Y Samsung Si-N KSC2715-Y SOT-23 10

B2 Hitachi C-Di HVC358B SOD-523 1,3 19

B2 Matsushita Z-Di MAZF036 SOD-323 1,7 19

B2 Matsushita Z-Di MAZN036 SOD-523 1,3 19

B2 Motorola Si-Di MBR0520 SOD-123 2,7 19

B2 NEC Si-N 2SC1621-B2 SOT-23 10

B2 NEC Si-N 2SC4175-B2 SOT-323 2 10

B2 Rohm Si-P+R IMB2A SOT-163 15

B2 Rohm Si-P+R UMB2N SOT-363 2 15

B2 Thomson Si-Di SMBYT01-200 SOD-6 6,4 19

B2 Motorola Si-N BSV52 SOT-23 10 BSX20

B2 Philips Si-N BSV52 SOT-23 10 BSX20

B2 Thomson Si-N BSV52 SOT-23 10

B20 Thomson Si-Di SMBYW01-200 DO-214AA 5×3,5 19

B20100 Motorola Si-Di MBR20100CT TO-220 4

B20100 Motorola Si-Di MBRF20100CT TO-220 Iso 4

B20100T Motorola Si-Di MBRB20100CT TO-263 8

B2015 Motorola Si-Di MBR2015CTL TO-220 4

B1545 … B2015

http://www.serwis-elektroniki.com.pl/

Page 35:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 26 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BB20200 Motorola Si-Di MBR20200CT TO-220 4

B20200 Motorola Si-Di MBRF20200CT TO-220 Iso 4

B20200T Motorola Si-Di MBRB20200CT TO-263 8

B2030 Motorola Si-Di MBR2030CTL TO-220 4

B2035 GIE Si-Di MBR2035CT TO-220 4

B2035 Motorola Si-Di MBR2035CT TO-220 4

B2045 GIE Si-Di MBR2045CT TO-220 4

B2045 Motorola Si-Di MBR2045CT TO-220 4

B2045 Motorola Si-Di MBRF2045CT TO-220 Iso 4

B2060 Motorola Si-Di MBR2060CT TO-220 4

B2060 Motorola Si-Di MBRF2060CT TO-220 Iso 4

B2060T Motorola Si-Di MBRB2060CT TO-263 8

B2070 Motorola Si-Di MBR2070CT TO-220 4

B2080 Motorola Si-Di MBR2080CT TO-220 4

B2090 Motorola Si-Di MBR20900CT TO-220 4

B20PH Philips Z-Di BZX79-B20 DO-35 9

B22 NEC Si-N 2SC3734-B22 SOT-23 10

B22PH Philips Z-Di BZX79-B22 DO-35 9

B23 NEC Si-N 2SC3734-B23 SOT-23 10

B24 NEC Si-N 2SC3734-B24 SOT-23 10

B24PH Philips Z-Di BZX79-B24 DO-35 9

B25 NEC Si-N NTM3904 SOT-23 10

B2515L Motorola Si-Di MBR2515L TO-220 4

B2515L Motorola Si-Di MBRB2515L TO-263 8

B2535 GIE Si-Di MBR2535CT TO-220 4

B2535 Motorola Si-Di MBR2535CT TO-220 4

B2535L Motorola Si-Di MBR2535CTL TO-220 4

B2535L Motorola Si-Di MBRB2535CTL TO-263 8

B2545 Motorola Si-Di MBR2545CT TO-220 4

B2545 Motorola Si-Di MBRF2545CT TO-220 Iso 4

B2545T Motorola Si-Di MBRB2545CT TO-263 8

B26 Philips Si-N BF570 SOT-23 10 BF370

B27PH Philips Z-Di BZX79-B27 DO-35 9

B2V4PH Philips Z-Di BZX79-B2V4 DO-35 9

B2V7PH Philips Z-Di BZX79-B2V7 DO-35 9

B20200 … B2V7PH

http://www.serwis-elektroniki.com.pl/

Page 36:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 27 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BB3 Hitachi Si-Di HSM2694 SOT-23 10

B3 Hitachi C-Di HVC369B SOD-523 1,3 19

B3 KEC Si-Di KDS121 SOT-323 2 10

B3 KEC Si-Di KDS184 SOT-23 10

B3 Matsushita Z-Di MAZF039 SOD-323 1,7 19

B3 Matsushita Z-Di MAZN039 SOD-523 1,3 19

B3 Motorola Si-Di MBR0530 SOD-123 2,7 19

B3 NEC Si-N 2SC1621-B3 SOT-23 10

B3 NEC Si-N 2SC4175-B3 SOT-323 2 10

B3 Philips Si-Di 1PS301 SC-70 2 10

B3 Rohm Si-P+R IMB3A SOT-163 15

B3 Rohm Si-P+R UMB3N SOT-363 2 15

B3 Thomson Si-Di SMBYT01-300 SOD-6 6,4 19

B3 Toshiba Si-Di 1SS184 SOT-23 10

B3 Toshiba Si-Di 1SS301 SOT-323 2 10

B3 Toshiba Si-Di 1SS361 SS Mini 1,6 10

B3030 Motorola Si-Di MBRB3030CT TO-262 8

B3035 Motorola Si-Di MBR3035PT TO-3P 5

B3035 Motorola Si-Di MBR3035WT TO-247 3

B3045 Motorola Si-Di MBR3045PT TO-3P 5

B3045 Motorola Si-Di MBR3045ST TO-220 4

B3045 Motorola Si-Di MBR3045WT TO-247 3

B30PH Philips Z-Di BZX79-B30 DO-35 9

B320 Motorola Si-Di MBRD320 TO-252 8

B33 NEC Si-N 2SC3735-B33 SOT-23 10

B33 NEC Si-N 2SC4176-B33 SOT-323 2 10

B330 Motorola Si-Di MBRD330 TO-252 8

B33PH Philips Z-Di BZX79-B33 DO-35 9

B34 Motorola Si-N MBRS340 (403-03) 7×6 19

B34 NEC Si-N 2SC3735-B34 SOT-23 10

B34 NEC Si-N 2SC4176-B34 SOT-323 2 10

B340 Motorola Si-Di MBRD340 TO-252 8

B35 NEC Si-N 2SC3735-B35 SOT-23 10

B35 NEC Si-N 2SC4176-B35 SOT-323 2 10

B350 Motorola Si-Di MBRD350 TO-252 8

B3 … B350

http://www.serwis-elektroniki.com.pl/

Page 37:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 28 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BB36 Motorola Si-N MBRS360 (403-03) 7×6 19

B360 Motorola Si-Di MBRD360 TO-252 8

B36PH Philips Z-Di BZX79-B36 DO-35 9

B39PH Philips Z-Di BZX79-B39 DO-35 9

B3T Philips Si-Di 1PS184 SOT-23 10

B3V0PH Philips Z-Di BZX79-B3V0 DO-35 9

B3V3PH Philips Z-Di BZX79-B3V3 DO-35 9

B3V6PH Philips Z-Di BZX79-B3V6 DO-35 9

B3V9PH Philips Z-Di BZX79-B3V9 DO-35 9

B4 AEG C-Di BB404B 10 BB804

B4 Ferranti Si-N BSV52R SOT-23 10

B4 Hitachi Si-Di HSM2693 SOT-23 10

B4 ITT C-Di BB404B 10 BB804

B4 Motorola Si-N BSV52R SOT-23 10 BSX20

B4 Motorola Si-Di MBR0540 SOD-123 2,7 19

B4 NEC Si-N 2SC1621-B4 SOT-23 10

B4 NEC Si-N 2SC4175-B4 SOT-323 2 10

B4 Philips Si-N BSV52R SOT-23 10 BSX20

B4 Rohm Si-P+R IMB4A SOT-163 15

B4 Rohm Si-P+R UMB4N SOT-363 2 15

B4 Sanyo Si-N 2SC4987-B4 SC-75 1,6 10

B4 Thomson Si-N BSV52R SOT-23 10

B4 Thomson Si-Di SMBYT01-400 SOD-6 6,4 19

B4 Valvo Si-N BSV52R SOT-23 10

B4015L Motorola Si-Di MBR4015LWT TO-247 3

B4030 Motorola Si-Di MBRB4030 TO-262 8

B4045 Motorola Si-Di MBR4045PT TO-3P 5

B4045 Motorola Si-Di MBR4045WT TO-247 3

B42 NEC Si-P 2SB1475-B42 SOT-323 2 10

B43 NEC Si-P 2SB1475-B43 SOT-323 2 10

B43PH Philips Z-Di BZX79-B43 DO-35 9

B44 NEC Si-P 2SB1475-B44 SOT-323 2 10

B47PH Philips Z-Di BZX79-B47 DO-35 9

B4V3PH Philips Z-Di BZX79-B4V3 DO-35 9

B4V7PH Philips Z-Di BZX79-B4V7 DO-35 9

B36 … B4V7PH

http://www.serwis-elektroniki.com.pl/

Page 38:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 29 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BB5 Hitachi C-Di HVC372B SOD-523 1,3 19

B5 Rohm Si-P+R IMB5A SOT-163 15

B5 Rohm Si-P+R UMB5N SOT-363 2 15

B5 Sanyo Si-N 2SC4987-B5 SC-75 1,6 10

B5 Philips Si-P BSR12 SOT-23 10 2N2894A

B5025L Motorola Si-Di MBR5025L TO-3P 5

B51 NEC Si-N 2SB736A-B51 SOT-23 10

B51PH Philips Z-Di BZX79-B51 DO-35 9

B52 NEC Si-N 2SB736A-B52 SOT-23 10

B53 NEC Si-N 2SB736A-B53 SOT-23 10

B54 NEC Si-N 2SB736A-B54 SOT-23 10

B55 NEC Si-N 2SB736A-B55 SOT-23 10

B56PH Philips Z-Di BZX79-B56 DO-35 9

B5V1PH Philips Z-Di BZX79-B5V1 DO-35 9

B5V6PH Philips Z-Di BZX79-B5V6 DO-35 9

B6 Rohm Si-P+R IMB6A SOT-163 15

B6 Rohm Si-P+R UMB6N SOT-363 2 15

B6 Sanyo Si-P 2SB815-6 SOT-23 10

B6 Sanyo Si-N 2SC4987-B6 SC-75 1,6 10

B6045 Motorola Si-Di MBR6045PT TO-3P 5

B6045 Motorola Si-Di MBR6045WT TO-247 3

B620T Motorola Si-Di MBRD620CT TO-252 8

B62PH Philips Z-Di BZX79-B62 DO-35 9

B630T Motorola Si-Di MBRD630CT TO-252 8

B640T Motorola Si-Di MBRD640CT TO-252 8

B650T Motorola Si-Di MBRD650CT TO-252 8

B660T Motorola Si-Di MBRD660CT TO-252 8

B68PH Philips Z-Di BZX79-B68 DO-35 9

B6V2PH Philips Z-Di BZX79-B6V8 DO-35 9

B6V8PH Philips Z-Di BZX79-B6V8 DO-35 9

B7 Rohm Si-P+R IMB7A SOT-163 15

B7 Rohm Si-P+R UMB7 SOT-363 2 15

B7 Sanyo Si-P 2SB815-7 SOT-23 10

B735 GIE Si-Di MBR735 TO-220 4

B735 Motorola Si-Di MBR735 TO-220 4

B5 … B735

http://www.serwis-elektroniki.com.pl/

Page 39:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 30 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BB745 GIE Si-Di MBR745 TO-220 4

B745 Motorola Si-Di MBR745 TO-220 4

B745 Motorola Si-Di MBRF745 TO-220 Iso 4

B75PH Philips Z-Di BZX79-B75 DO-35 9

B7V5PH Philips Z-Di BZX79-B7V5 DO-35 9

B8 Philips Si-P BSR12R SOT-23 10

B8 Rohm Si-P+R IMB8A SOT-163 15

B8 Rohm Si-P+R UMB8N SOT-363 2 15

B81 Philips Si-P BSR12R SOT-23 10 2N2894A

B81 Valvo Si-P BSR12R SOT-23 10

B835L Motorola Si-Di MBRD835L TO-253 8

B8V2PH Philips Z-Di BZX79-B8V2 DO-35 9

B9 Rohm Si-P+R IMB9A SOT-163 15

B9 Rohm Si-P+R UMB9N SOT-363 2 15

B9 Toshiba Si-Di 1SS311 SOT-23 10

B9V1PH Philips Z-Di BZX79-B9V1 DO-35 9

BA AEG Si-P BCW61A SOT-23 10

BA Europa Si-P BCW61A SOT-23 10 BC558A

BA Hitachi Si-N 2SD1367-BA SOT-89 11

BA Matsushita Si-N+R XN2216 SOT-153 14

BA Motorola Si-N BCX54 SOT-89 11 BC635

BA NEC Si-N µPA500T SOT-153 14

BA NEC Si-N µPA570T SOT-353 2 14

BA NEC Si-N/P µPA674T SOT-363 2 15

BA Philips Si-N BCP54 SOT-223 16

BA Philips Si-N BCX54 SOT-89 11 BC635

BA Rohm Si-P 2SB1132 SOT-89 11

BA Sanyo Si-P 2SA1865 SC-75 1,6 10

BA Sanyo Si-P 2SB1118 SOT-89 11

BA Siemens Si-N BCP54 SOT-223 16

BA Siemens Si-N BCX54 SOT-89 11 BC635

BA Toshiba Si-Di 1SS154 SOT-23 10

BA Valvo Si-N BCX54 SOT-89 11

BA Zetex Si-Di ZMS2800 SOD-323 1,7 19

BA Philips Si-P BCW61A SOT-23 10

B745 … BA

http://www.serwis-elektroniki.com.pl/

Page 40:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 31 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBA Siemens Si-P BCW61A SOT-23 10

BAP Rohm Si-P 2SB1132-P SOT-89 11

BAQ Rohm Si-P 2SB1132-Q SOT-89 11

BAR Rohm Si-P 2SB1132-R SOT-89 11

BAs Siemens Si-N BCP54M (SCT-595) ~14

BB Europa Si-P BCW61B SOT-23 10 BC558B

BB Hitachi Si-P 2SB831-B SOT-23 10

BB Hitachi Si-N 2SD1367-BB SOT-89 11

BB Motorola Si-N BCX54-6 SOT-89 11

BB Philips Si-N BCX54-6 SOT-89 11

BB Sanyo Si-P 2SB1119 SOT-89 11

BB Siemens Si-N BCX54-6 SOT-89 11

BB Toshiba Si-Di 1SV128 SOT-23 10

BB Toshiba Si-Di 1SV237 SOT-143 13

BB Valvo Si-N BCX54-6 SOT-89 11

BB Zetex Si-Di ZMS5800 SOD-323 1,7 19

BB AEG Si-P BCW61B SOT-23 10

BB Philips Si-P BCW61B SOT-23 10

BB Siemens Si-P BCW61B SOT-23 10

BBA Thomson Z-Di SMBJ6.0CA DO-214AA 5×3,5 19

BBB Thomson Z-Di SMBJ6.5CA DO-214AA 5×3,5 19

BBC Thomson Z-Di SMBJ8.5CA DO-214AA 5×3,5 19

BBD Thomson Z-Di SMBJ10CA DO-214AA 5×3,5 19

BBE Thomson Z-Di SMBJ12CA DO-214AA 5×3,5 19

BBF Thomson Z-Di SMBJ13CA DO-214AA 5×3,5 19

BBG Thomson Z-Di SMBJ15CA DO-214AA 5×3,5 19

BBH Thomson Z-Di SMBJ18CA DO-214AA 5×3,5 19

BBI Thomson Z-Di SMBJ20CA DO-214AA 5×3,5 19

BBJ Thomson Z-Di SMBJ24CA DO-214AA 5×3,5 19

BBK Thomson Z-Di SMBJ26CA DO-214AA 5×3,5 19

BBL Thomson Z-Di SMBJ28CA DO-214AA 5×3,5 19

BBM Thomson Z-Di SMBJ30CA DO-214AA 5×3,5 19

BBN Thomson Z-Di SMBJ33CA DO-214AA 5×3,5 19

BBO Thomson Z-Di SMBJ58CA DO-214AA 5×3,5 19

BBQ Thomson Z-Di SMBJ85CA DO-214AA 5×3,5 19

BA … BBQ

http://www.serwis-elektroniki.com.pl/

Page 41:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 32 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBBs Siemens Si-Di BAR81 (MW-4) 13

BBs Siemens Si-Di BAR81W SOT-343 2 13

BBS Thomson Z-Di SMBJ130CA DO-214AA 5×3,5 19

BBT Thomson Z-Di SMBJ154CA DO-214AA 5×3,5 19

BBU Rohm Si-N 2SD2114K-U SOT-23 10

BBU Thomson Z-Di SMBJ170CA DO-214AA 5×3,5 19

BBV Rohm Si-N 2SD2114K-V SOT-23 10

BBV Thomson Z-Di SMBJ188CA DO-214AA 5×3,5 19

BBW Rohm Si-N 2SD2114K-W SOT-23 10

BBW Thomson Z-Di SMBJ48CA DO-214AA 5×3,5 19

BBZ Thomson Z-Di SMBJ5.0CA DO-214AA 5×3,5 19

BC Europa Si-P BCW61C SOT-23 10 BC558C

BC Hitachi Si-P 2SB831-C SOT-23 10

BC Hitachi Si-N 2SD1367-BC SOT-89 11

BC Motorola Si-N BCX54-10 SOT-89 11 BC635-10

BC Philips Si-N BCP54-10 SOT-223 16

BC Philips Si-N BCX54-10 SOT-89 11 BC635-10

BC Rohm Si-P 2SB1188 SOT-89 11

BC Sanyo Si-P 2SB1120 SOT-89 11

BC Siemens Si-N BCP54-10 SOT-223 16

BC Siemens Si-N BCX54-10 SOT-89 11 BC635-10

BC Toshiba Si-Di U1BC44 DO-214AC 5 19

BC Valvo Si-N BCX54-10 SOT-89 11

BC Zetex Si-Di ZMS2811 SOD-323 1,7 19

BC AEG Si-P BCW61C SOT-23 10

BC Philips Si-P BCW61C SOT-23 10

BC Siemens Si-P BCW61C SOT-23 10

BCP Rohm Si-P 2SB1188-P SOT-89 11

BCP28 Siemens Si-P-Darl BCP28 SOT-223 16

BCP29 Siemens Si-N-Darl BCP29 SOT-223 16

BCP48 Siemens Si-P-Darl BCP48 SOT-223 16

BCP49 Siemens Si-N-Darl BCP49 SOT-223 16

BCP68 Philips Si-N BCP68 SOT-223 16

BCP68 Siemens Si-N BCP68 SOT-223 16

BCP69 Philips Si-N BCP69 SOT-223 16

BBs … BCP69

http://www.serwis-elektroniki.com.pl/

Page 42:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 33 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBCP69 Siemens Si-N BCP69 SOT-223 16

BCQ Rohm Si-P 2SB1188-Q SOT-89 11

BCR Rohm Si-P 2SB1188-R SOT-89 11

BD Europa Si-P BCW61D SOT-23 10 BC558C

BD Fagor Z-Di P4SMA-18 DO-214AC 5 19

BD ITT Si-N BCW54-16 SOT-89 11 BC635-16

BD Motorola Si-N BCX54-16 SOT-89 11

BD Philips Si-N BCP54-16 SOT-223 16

BD Rohm Si-P 2SB1189 SOT-89 11

BD Sanyo Si-P 2SB1121 SOT-89 11

BD Siemens Si-N BCP54-16 SOT-223 16

BD Siemens Si-N BCX54-16 SOT-89 11

BD Toshiba Si-Di 1SS271 SOT-23 10

BD Valvo Si-N BCX54-16 SOT-89 11

BD Zetex Si-Di ZHCS400 SOD-323 1,7 19

BD AEG Si-P BCW61D SOT-23 10

BD Philips Si-P BCW61D SOT-23 10

BD Siemens Si-P BCW61D SOT-23 10

BDD Thomson Z-Di SM15T6V8C SOD-15 8×5 19

BDE Thomson Z-Di SM15T6V8CA SOD-15 8×5 19

BDF Thomson Z-Di SM15T7V5C SOD-15 8×5 19

BDG Thomson Z-Di SM15T7V5CA SOD-15 8×5 19

BDM Rohm Si-P 2SA1733K-M SOT-23 10

BDM Rohm Si-P 2SA1808-M SOT-323 2 10

BDM Rohm Si-P 2SA1821-M SS Mini 1,6 10

BDN Rohm Si-P 2SA1733K-N SOT-23 10

BDN Rohm Si-P 2SA1808-N SOT-323 2 10

BDN Rohm Si-P 2SA1821-N SS Mini 1,6 10

BDN Thomson Z-Di SM15T10C SOD-15 8×5 19

BDP Rohm Si-P 2SA1189-P SOT-89 11

BDP Rohm Si-P 2SA1733K-P SOT-23 10

BDP Rohm Si-P 2SA1808-P SOT-323 2 10

BDP Rohm Si-P 2SA1821-P SS Mini 1,6 10

BDP Thomson Z-Di SM15T10CA SOD-15 8×5 19

BDQ Rohm Si-P 2SB1189-Q SOT-89 11

BCP69 … BDQ

http://www.serwis-elektroniki.com.pl/

Page 43:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 34 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBDR Rohm Si-P 2SB1189-R SOT-89 11

BDS Thomson Z-Di SM15T12C SOD-15 8×5 19

BDT Thomson Z-Di SM15T12CA SOD-15 8×5 19

BDW Thomson Z-Di SM15T15C SOD-15 8×5 19

BDX Thomson Z-Di SM15T15CA SOD-15 8×5 19

BE Fagor Z-Di P4SMA-18A DO-214AC 5 19

BE ITT Si-N BCW55 TO-18 BC546

BE Mitsubishi Si-N 2SC3440-E SOT-23 10

BE Mitsubishi Si-N 2SC3443-E SOT-89 11

BE Motorola Si-N BCX55 SOT-89 11 BC637

BE Philips Si-N BCP55 SOT-223 16

BE Philips Si-N BCX55 SOT-89 11 BC637

BE Rohm Si-P BCX53 SOT-89 11

BE Sanyo Si-P 2SB1122 SOT-89 11

BE Siemens Si-N BCP55 SOT-223 16

BE Siemens Si-P BCW61E SOT-23 10

BE Siemens Si-N BCX55 SOT-89 11 BC637

BE Toshiba Si-Di 1SV172 SOT-23 10

BE Toshiba Si-Di 1SV252 SOT-323 2 10

BE Valvo Si-N BCX55 SOT-89 11

BED Thomson Z-Di SM15T18C SOD-15 8×5 19

BEE Thomson Z-Di SM15T18CA SOD-15 8×5 19

BEH Thomson Z-Di SM15T22C SOD-15 8×5 19

BEK Thomson Z-Di SM15T22CA SOD-15 8×5 19

BEL Thomson Z-Di SM15T24C SOD-15 8×5 19

BEM Thomson Z-Di SM15T24CA SOD-15 8×5 19

BEN Thomson Z-Di SM15T27C SOD-15 8×5 19a

BEP Rohm Si-P 2SB1260-P SOT-89 11

BEP Thomson Z-Di SM15T27CA SOD-15 8×5 19

BEQ Rohm Si-P 2SB1260-Q SOT-89 11

BEQ Thomson Z-Di SM15T30C SOD-15 8×5 19

BER Rohm Si-P 2SB1260-R SOT-89 11

BER Thomson Z-Di SM15T30CA SOD-15 8×5 19

BEs Siemens Si-N BCP55M (SCT-595) ~14

BES Thomson Z-Di SM15T33C SOD-15 8×5 19

BDR … BES

http://www.serwis-elektroniki.com.pl/

Page 44:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 35 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBET Thomson Z-Di SM15T33CA SOD-15 8×5 19

BEU Thomson Z-Di SM15T36C SOD-15 8×5 19

BEV Thomson Z-Di SM15T36CA SOD-15 8×5 19

BEW Thomson Z-Di SM15T39C SOD-15 8×5 19

BEX Thomson Z-Di SM15T39CA SOD-15 8×5 19

BF Europa Si-P BCW61FF SOT-23 10 BC558C

BF Fagor Z-Di P4SMA-20 DO-214AC 5 19

BF KEC Si-Di KDS112 SOT-323 2 10

BF Mitsubishi Si-N 2SC3440-F SOT-23 10

BF Mitsubishi Si-N 2SC3443-F SOT-89 11

BF Motorola Si-N BCX55-6 SOT-89 11

BF Philips Si-N BCX55-6 SOT-89 11

BF Sanyo Si-P 2SB1123 SOT-89 11

BF Siemens Si-N BCX55-6 SOT-89 11

BF Toshiba Si-Di 1SS268 SOT-23 10

BF Toshiba Si-Di 1SS312 SOT-323 2 10

BF Toshiba Si-Di 1SS364 SS Mini 1,6 10

BF Valvo Si-N BCX55-6 SOT-89 11

BF Siemens Si-P BCW61FF SOT-23 10

BF720 Philips Si-N BF720 SOT-223 16

BF720 Siemens Si-N BF720 SOT-223 16

BF721 Philips Si-P BF721 SOT-223 16

BF721 Siemens Si-P BF721 SOT-223 16

BF722 Philips Si-N BF722 SOT-223 16

BF722 Siemens Si-N BF722 SOT-223 16

BF1 Rohm Si-P-Darl RXTA-64 SOT-89 11

BF2 Rohm Si-P-Darl RXTA-76 SOT-89 11

BF723 Philips Si-P BF723 SOT-223 16

BF723 Siemens Si-P BF723 SOT-223 16

BFN Thomson Z-Di SM15T68C SOD-15 8×5 19

BFN36 Siemens Si-N BFN36 SOT-223 16

BFN37 Siemens Si-P BFN37 SOT-223 16

BFN38 Siemens Si-N BFN38 SOT-223 16

BFN39 Siemens Si-P BFN39 SOT-223 16

BFP Rohm Si-P 2SB1308-P SOT-89 11

BET … BFP

http://www.serwis-elektroniki.com.pl/

Page 45:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 36 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBFP Thomson Z-Di SM15T68CA SOD-15 8×5 19

BFQ Rohm Si-P 2SB1308-Q SOT-89 11

BFR Rohm Si-P 2SB1308-R SOT-89 11

BFR Rohm Si-N 2SC4642K-R SOT-23 10

BFR Rohm Si-N 2SC4723-R SOT-323 2 10

BFS Rohm Si-N 2SC4642K-S SOT-23 10

BFS Rohm Si-N 2SC4723-S SOT-323 2 10

BFW Thomson Z-Di SM15T100C SOD-15 8×5 19

BFX Thomson Z-Di SM15T100CA SOD-15 8×5 19

BG Europa Si-P BCW61FN SOT-23 10 BC558C

BG Europa Si-P BCX71G SOT-23 10 BC557A

BG Fagor Z-Di P4SMA-20A DO-214AC 5 19

BG Mitsubishi Si-N 2SC3440-G SOT-23 10

BG Mitsubishi Si-N 2SC3443-G SOT-89 11

BG Motorola Si-N BCX55-10 SOT-89 11 BC637-10

BG Philips Si-N BCP55-10 SOT-223 16

BG Philips Si-N BCX55-10 SOT-89 11 BC637-10

BG Sanyo Si-P 2SB1124 SOT-89 11

BG Siemens Si-N BCP55-10 SOT-223 16

BG Siemens Si-N BCX55-10 SOT-89 11 BC637-10

BG Thomson Z-Di SMAJ13A DO-214AC 5×2,5 19

BG Toshiba Si-Di 1SS269 SOT-23 10

BG Toshiba Si-Di 1SS313 SOT-323 2 10

BG Valvo Si-N BCX55-10 SOT-89 11

BG Ferranti Si-P BCX71G SOT-23 10

BG Philips Si-P BCX71G SOT-23 10

BG Siemens Si-P BCX71G SOT-23 10

BG34S Si-Di SPB-G34S TO-252 8

BGH Thomson Z-Di SM15T150C SOD-15 8×5 19

BGK Thomson Z-Di SM15T150CA SOD-15 8×5 19

BGU Thomson Z-Di SM15T200C SOD-15 8×5 19

BGV Thomson Z-Di SM15T200CA SOD-15 8×5 19

BH Europa Si-P BCX71H SOT-23 10 BC557B

BH Fagor Z-Di P4SMA-22 DO-214AC 5 19

BH Hitachi Si-P 2SB1001-BH SOT-89 11

BFP … BH

http://www.serwis-elektroniki.com.pl/

Page 46:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 37 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBH Motorola Si-N BCX56 SOT-89 11 BC639

BH Philips Si-N BCX56 SOT-89 11 BC639

BH Sanyo Si-Di 1SS350 SOT-23 10

BH Sanyo Si-P 2SB1125 SOT-89 11

BH Siemens Si-N BCX56 SOT-89 11 BC639

BH Thomson Z-Di SMAJ13CA DO-214AC 5×2,5 19

BH Toshiba Si-Di 1SS295 SOT-23 10

BH Valvo Si-N BCX56 SOT-89 11

BH Ferranti Si-P BCX71H SOT-23 10

BH Motorola Si-P BCX71H SOT-23 10

BH Siemens Si-P BCX71H SOT-23 10

BHM Rohm Si-N 2SC4699K-M SOT-23 10

BHM Rohm Si-N 2SC4700-M SOT-323 2 10

BHN Rohm Si-N 2SC4699K-N SOT-23 10

BHN Rohm Si-N 2SC4700-N SOT-323 2 10

BHP Rohm Si-P 2SB1386-P SOT-89 11

BHP Rohm Si-N 2SC4699K-P SOT-23 10

BHP Rohm Si-N 2SC4700-P SOT-323 2 10

BHQ Rohm Si-P 2SB1386-Q SOT-89 11

BHR Rohm Si-P 2SB1386-R SOT-89 11

BHs Siemens Si-N BCP56M (SCT-595) ~14

BI Sanyo Si-P 2SB1126 SOT-89 11

bia³y Philips C-Di BB219 MiniMELF 3,4×1,6 20 BB909

bia³y Philips C-Di BB515 SOD-123 2,7 19 BB721

bia³y Philips C-Di BB811 SOD-123 2,7 19 1SV186

bia³y Siemens C-Di BB512 SOD-123 2,7 19

bia³y Siemens C-Di BB515 SOD-123 2,7 19 BB721

bia³y Siemens C-Di BB811 SOD-123 2,7 19 1SV186

bia³y/ziel. Philips C-Di BB215 MiniMELF 3,4×1,6 20 BB405B

BIQ Hitachi N-FET 2SK541-BIQ SOT-23 10

BIR Hitachi N-FET 2SK541-BIR SOT-23 10

BIS Hitachi N-FET 2SK541-BIS SOT-23 10

BJ Europa Si-P BCX71J SOT-23 10 BC557B

BJ Hitachi Si-P 2SB1001-BJ SOT-89 11

BJ Motorola Si-N BCX56-6 SOT-89 11

BH … BJ

http://www.serwis-elektroniki.com.pl/

Page 47:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 38 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBJ Philips Si-N BCP56 SOT-223 16

BJ Philips Si-N BCX56-6 SOT-89 11

BJ Sanyo Si-P 2SB1302 SOT-89 11

BJ Siemens Si-N BCP56 SOT-223 16

BJ Siemens Si-N BCX56-6 SOT-89 11

BJ Valvo Si-N BCX56-6 SOT-89 11

BJ Ferranti Si-P BCX71J SOT-23 10

BJ Motorola Si-P BCX71J SOT-23 10

BJ Siemens Si-P BCX71J SOT-23 10

BJE Rohm Si-P 2SB1427-E SOT-89 11

BJS Rohm Si-P 2SB1427-S SOT-89 11

BJU Rohm Si-P 2SB1427-U SOT-89 11

BJU Rohm Si-N 2SD2226K-U SOT-23 10

BJU Rohm Si-N 2SD2351-U SOT-323 2 10

BJV Rohm Si-N 2SD2226K-V SOT-23 10

BJV Rohm Si-N 2SD2351-V SOT-323 2 10

BJW Rohm Si-N 2SD2226K-W SOT-23 10

BJW Rohm Si-N 2SD2351-W SOT-323 2 10

BK Europa Si-P BCX71K SOT-23 10 BC557C

BK Fagor Z-Di P4SMA-22A DO-214AC 5 19

BK Matsushita Si-P+R XN4114 SOT-163 15

BK Matsushita Si-P+R XP4114 SOT-363 2 15

BK Motorola Si-N BCX56-10 SOT-89 11 BC639-10

BK Philips Si-N BCP56-10 SOT-223 16

BK Philips Si-N BCX56-10 SOT-89 11 BC639-10

BK Rohm Si-P 2SB1590K SOT-23 10

BK Sanyo Si-P 2SB1323 SOT-89 11

BK Siemens Si-N BCP56-10 SOT-223 16

BK Siemens Si-N BCX56-10 SOT-89 11 BC639-10

BK Valvo Si-N BCX56-10 SOT-89 11

BK Ferranti Si-P BCX71K SOT-23 10

BK Philips Si-P BCX71K SOT-23 10

BK Siemens Si-P BCX71K SOT-23 10

BL Fagor Z-Di P4SMA-24 DO-214AC 5 19

BL Motorola Si-N BCX55-16 SOT-89 11 BC637-16

BJ … BL

http://www.serwis-elektroniki.com.pl/

Page 48:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 39 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBL Motorola Si-N BCX56-16 SOT-89 11 BC639-16

BL Philips Si-N BCP56-16 SOT-223 16

BL Philips Si-N BCX55-16 SOT-89 11 BC637-16

BL Philips Si-N BCX56-16 SOT-89 11 BC639-16

BL Sanyo Si-P 2SA1341 SOT-23 10

BL Sanyo Si-P 2SA1676 SOT-323 2 10

BL Sanyo Si-P 2SB1324 SOT-89 11

BL Siemens Si-N BCP56-16 SOT-223 16

BL Siemens Si-N BCX55-16 SOT-89 11 BC637-16

BL Siemens Si-N BCX56-16 SOT-89 11 BC639-16

BL Siemens Si-P BCX71L SOT-23 10

BLL Rohm Si-N 2SC4771K-L SOT-23 10

BLL Rohm Si-N 2SC4772-L SOT-323 2 10

BLM Rohm Si-N 2SC4771K-M SOT-23 10

BLM Rohm Si-N 2SC4772-M SOT-323 2 10

BLN Rohm Si-N 2SC4771K-N SOT-23 10

BLN Rohm Si-N 2SC4772-N SOT-323 2 10

BLP Rohm Si-P 2SB1561-P SOT-89 11

BLP Rohm Si-N 2SC4771K-P SOT-23 10

BLP Rohm Si-N 2SC4772-P SOT-323 2 10

BLQ Rohm Si-P 2SB1561-Q SOT-89 11

BLS Siemens LIN-IC BGA310 SOT-143 13

BLS Siemens LIN-IC BGA420 SOT-343 2 13

BM Fagor Z-Di P4SMA-24A DO-214AC 5 19

BM Motorola Si-N BCX55-16 SOT-89 11 BC637-16

BM Philips Si-N BCP55-16 SOT-223 16

BM Philips Si-N BCX55-16 SOT-89 11 BC637-16

BM Sanyo Si-P 2SB1325 SOT-89 11

BM Siemens Si-N BCP55-16 SOT-223 16

BM Siemens Si-N BCX55-16 SOT-89 11 BC637-16

BM Thomson Z-Di SMAJ15A DO-214AC 5×2,5 19

BM Motorola Si-P BSS63 SOT-23 10

BM Philips Si-P BSS63 SOT-23 10

BM Siemens Si-P BSS63 SOT-23 10

BMp Philips Si-P BSS63 SOT-23 10 BSS68

BL … BMp

http://www.serwis-elektroniki.com.pl/

Page 49:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 40 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBMp Siemens Si-P BSS63 SOT-23 10 BSS68

BMQ Rohm Si-N 2SC4713K-Q SOT-23 10

BMQ Rohm Si-N 2SC4774-Q SOT-323 2 10

BMR Rohm Si-N 2SC4713K-R SOT-23 10

BMR Rohm Si-N 2SC4774-R SOT-323 2 10

BMS Rohm Si-N 2SC4713K-S SOT-23 10

BMS Rohm Si-N 2SC4774-S SOT-323 2 10

BMS Siemens LIN-IC BGA312 SOT-143 13

BMS Siemens LIN-IC BGA425 SOT-343 2 13

BMS Siemens LIN-IC BGA427 SOT-343 2 13

BN Europa Si-P BCW61FN SOT-23 10 BC558C

BN Fagor Z-Di P4SMA-27 DO-214AC 5 19

BN Sanyo Si-P 2SB1394 SOT-89 11

BN Sanyo Si-N+Di+R 2SD2324 SOT-23 10

BN Siemens Si-P BCW61FN SOT-23 10

BNS Siemens LIN-IC BGA318 SOT-143 13

BO Europa Si-P BCW61AR SOT-23 10 BC558A

BO KEC Si-P KTA1660-O SOT-89 11

BO Sanyo Si-P 2SB1396 SOT-89 11

BO Siemens Si-P BCW61RA SOT-23 10

BO Toshiba Si-P 2SA1200-O SOT-89 11

BO Valvo Si-P BCW61RA SOT-23 10

BP Europa Si-P BCW61BR SOT-23 10 BC558B

BP Fagor Z-Di P4SMA-27A DO-214AC 5 19

BP Hitachi MOS-P-FET-e* 2SJ574 SOT-23 10

BP Sanyo Si-P 2SB1397 SOT-89 11

BP Siemens Si-P BCW61RB SOT-23 10

BP Valvo Si-P BCW61RB SOT-23 10

BQ Fagor Z-Di P4SMA-30 DO-214AC 5 19

BQ Matsushita Si-P 2SB1218A-Q SOT-323 2 10

BQ Matsushita Si-P 2SB1627-Q (T Mini) ~10

BQ Matsushita Si-P 2SB709A-Q SOT-23 10

BQ Matsushita Si-P 2SB766A-Q SOT-89 11

BQ Philips Si-P 2PB709AQ SOT-23 10

BQ Rohm Si-N 2SC2412-BQ (MMT) ~10

BMp … BQ

http://www.serwis-elektroniki.com.pl/

Page 50:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 41 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBQ Rohm Si-N 2SC2412K-Q SOT-23 10

BQ Rohm Si-N 2SC4081-Q SOT-323 2 10

BR Europa Si-P BCW61CR SOT-23 10 BC558C

BR Fagor Z-Di P4SMA-30A DO-214AC 5 19

BR Matsushita Si-P 2SB1218A-R SOT-323 2 10

BR Matsushita Si-P 2SB1627-R (T Mini) ~10

BR Matsushita Si-P 2SB709A-R SOT-23 10

BR Matsushita Si-P 2SB766A-R SOT-89 11

BR Matsushita Si-N+R XN4214 SOT-163 15

BR Matsushita Si-N+R XP4214 SOT-363 2 15

BR Philips Si-P 2PB709AR SOT-23 10

BR Rohm Si-N 2SC2412-BR (MMT) ~10

BR Rohm Si-N 2SC2412K-R SOT-23 10

BR Rohm Si-N 2SC4081-R SOT-323 2 10

BR Siemens Si-P BCW61RC SOT-23 10

BR Valvo Si-P BCW61RC SOT-23 10

BR1 Philips Si-P BSP30 SOT-223 16

BR1 Philips Si-P BSR30 SOT-89 11 2N4030

BR1 Valvo Si-P BSR30 SOT-89 11

BR2 Philips Si-P BSP31 SOT-223 16

BR2 Philips Si-P BSR31 SOT-89 11 2N4031

BR2 Valvo Si-P BSR31 SOT-89 11

BR3 Philips Si-P BSP32 SOT-223 16

BR3 Philips Si-P BSR32 SOT-89 11 2N4032

BR3 Valvo Si-P BSR32 SOT-89 11

BR4 Philips Si-P BSP33 SOT-223 16

BR4 Philips Si-P BSR33 SOT-89 11 2N4033

BR4 Valvo Si-P BSR33 SOT-89 11

BS Europa Si-P BCW61DR SOT-23 10 BC558C

BS Fagor Z-Di P4SMA-33 DO-214AC 5 19

BS Matsushita Si-P 2SB1218A-S SOT-323 2 10

BS Matsushita Si-P 2SB1627-S (T Mini) ~10

BS Matsushita Si-P 2SB709A-S SOT-23 10

BS Matsushita Si-P 2SB766A-S SOT-89 11

BS Philips Si-P 2PB709AS SOT-23 10

BQ … BS

http://www.serwis-elektroniki.com.pl/

Page 51:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 42 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBS Rohm Si-N 2SC2412-BS MMT ~10

BS Rohm Si-N 2SC2412K-S SOT-23 10

BS Rohm Si-N 2SC4081-S SOT-323 2 10

BS Rohm Si-N 2SD2444K SOT-23 10

BS Sanyo Si-P 2SA1669 SOT-23 10

BS Siemens Si-P BCW61RD SOT-23 10

BS1 Philips Si-P BSP60 SOT-223 16

BS1 Philips Si-P-Darl+Di BST60 SOT-89 11 BSR60

BS1 Siemens Si-P BSP60 SOT-223 16

BS1 Valvo Si-P-Darl BST60 SOT-89 11

BS2 Philips Si-P BSP61 SOT-223 16

BS2 Philips Si-P-Darl BST61 SOT-89 11 BSR61

BS2 Siemens Si-P BSP61 SOT-223 16

BS2 Valvo Si-P-Darl BST61 SOT-89 11

BS3 Philips Si-P BSP62 SOT-223 16

BS3 Philips Si-P-Darl BST62 SOT-89 11 BSR62

BS3 Siemens Si-P BSP62 SOT-223 16

BS3 Valvo Si-P-Darl BST62 SOT-89 11

BSP50 Philips Si-N-Darl BSP50 SOT-223 16

BSP50 Siemens Si-N-Darl BSP50 SOT-223 16

BSP51 Philips Si-N-Darl BSP51 SOT-223 16

BSP51 Siemens Si-N-Darl BSP51 SOT-223 16

BSP52 Philips Si-N-Darl BSP52 SOT-223 16

BSP52 Siemens Si-N-Darl BSP52 SOT-223 16

BSP60 Philips Si-P-Darl BSP60 SOT-223 16

BSP60 Siemens Si-P-Darl BSP60 SOT-223 16

BSP61 Philips Si-P-Darl BSP61 SOT-223 16

BSP61 Siemens Si-P-Darl BSP61 SOT-223 16

BSP62 Philips Si-P-Darl BSP62 SOT-223 16

BSP62 Siemens Si-P-Darl BSP62 SOT-223 16

BT Fagor Z-Di P4SMA-33A DO-214AC 5 19

BT Hitachi Si-P 2SB1048 SOT-89 11

BT Sanyo Si-N 2SC4069 SOT-23 10

BT Siemens Si-P BCW61RE SOT-23 10

BT1 Philips Si-P BSP15 SOT-223 16

BS … BT1

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Page 52:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 43 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBT1 Philips Si-P BST15 SOT-89 11 2N5415

BT1 Valvo Si-P BST15 SOT-89 11

BT1511 Thomson Z-Di, Z-IC THT150-11 MDIP-8 23

BT1512 Thomson Z-Di, Z-IC THT150-12 DIP-8 21

BT2 Philips Si-P BSP16 SOT-223 16

BT2 Philips Si-P BST16 SOT-89 11 2N5416

BT2 Valvo Si-P BST16 SOT-89 11

BT2011 Thomson Z-Di, Z-IC THT200-11 MDIP-8 23

BT2012 Thomson Z-Di, Z-IC THBT200-12 DIP-8 21

BT2711 Thomson Z-Di, Z-IC THBT270-11 MDIP-8 23

BT2712 Thomson Z-Di, Z-IC THBT270-12 DIP-8 21

Bt4 Philips Si-P PUMB4 SOT-363 15

BU Europa Si-P BCX71GR SOT-23 10

BU Fagor Z-Di P4SMA-36 DO-214AC 5 19

BU NEC Si-N 2SD1005-BU SOT-89 11

BU Siemens Si-P BCX71RG SOT-23 10

BU Valvo Si-P BCX71RG SOT-23 10

BUA Thomson Z-Di SMBJ6.0A DO-214AA 5×3,5 19

BUB Thomson Z-Di SMBJ6.5A DO-214AA 5×3,5 19

BUC Thomson Z-Di SMBJ8.5A DO-214AA 5×3,5 19

BUD Thomson Z-Di SMBJ10A DO-214AA 5×3,5 19

BUE Thomson Z-Di SMBJ12A DO-214AA 5×3,5 19

BUF Thomson Z-Di SMBJ13A DO-214AA 5×3,5 19

BUG Thomson Z-Di SMBJ15A DO-214AA 5×3,5 19

BUH Thomson Z-Di SMBJ18A DO-214AA 5×3,5 19

BUI Thomson Z-Di SMBJ20A DO-214AA 5×3,5 19

BUJ Thomson Z-Di SMBJ24A DO-214AA 5×3,5 19

BUK Thomson Z-Di SMBJ26A DO-214AA 5×3,5 19

BUL Thomson Z-Di SMBJ28A DO-214AA 5×3,5 19

BUM Thomson Z-Di SMBJ30A DO-214AA 5×3,5 19

BUN Thomson Z-Di SMBJ33A DO-214AA 5×3,5 19

BUO Thomson Z-Di SMBJ58A DO-214AA 5×3,5 19

BUQ Thomson Z-Di SMBJ85A DO-214AA 5×3,5 19

BUS Thomson Z-Di SMBJ130A DO-214AA 5×3,5 19

BUT Thomson Z-Di SMBJ154A DO-214AA 5×3,5 19

BT1 … BUT

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Page 53:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 44 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

BBUU Thomson Z-Di SMBJ170A DO-214AA 5×3,5 19

BUV Thomson Z-Di SMBJ188A DO-214AA 5×3,5 19

BUW Thomson Z-Di SMBJ48A DO-214AA 5×3,5 19

BUZ Thomson Z-Di SMBJ5.0A DO-214AA 5×3,5 19

BV Fagor Z-Di P4SMA-36A DO-214AC 5 19

BV NEC Si-N 2SD1005-BV SOT-89 11

BV Rohm Si-N 2SC5274 SS Mini 1,6 10

BV Sanyo PIN-Di 1SV233 SOT-23 10

BV Sanyo PIN-Di 1SV247 SOT-23 10

BV Sanyo PIN-Di 1SV247 SOT-323 2 10

BV1 NEC Si-P 2SB624-BV1 SOT-23 10

BV2 NEC Si-P 2SB624-BV2 SOT-23 10

BV3 NEC Si-P 2SB624-BV3 SOT-23 10

BV4 NEC Si-P 2SB624-BV4 SOT-23 10

BV5 NEC Si-P 2SB624-BV5 SOT-23 10

BVA Thomson Z-Di SMBJ22A DO-214AA 5×3,5 19

BW Europa Si-P BCX71HR SOT-23 10

BW Fagor Z-Di P4SMA-39 DO-214AC 5 19

BW NEC Si-N 2SD1005-BW SOT-89 11

BW Siemens Si-P BCX71RH SOT-23 10

BW Valvo Si-P BCX71RH SOT-23 10

BW1 NEC Si-P 2SB736-BW1 SOT-23 10

BW2 NEC Si-P 2SB736-BW2 SOT-23 10

BW3 NEC Si-P 2SB736-BW3 SOT-23 10

BW4 NEC Si-P 2SB736-BW4 SOT-23 10

BW5 NEC Si-P 2SB736-BW5 SOT-23 10

BX Europa Si-P BCX71JR SOT-23 10

BX Fagor Z-Di P4SMA-39A DO-214AC 5 19

BX Siemens Si-P BCX71RJ SOT-23 10

BX Valvo Si-P BCX71RJ SOT-23 10

BY Europa Si-P BCX71KR SOT-23 10

BY Fagor Z-Di P4SMA-43 DO-214AC 5 19

BY Hitachi MOS-N-FET-e 2SK1334 SOT-89 11

BY KEC Si-P KTA1660-Y SOT-89 11

BY Sanyo Si-N 2SC3395 SOT-23 10

BUU … BY

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Page 54:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 45 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

BY Sanyo Si-N 2SC4396 SOT-323 2 10

BY Siemens Si-P BCX71RK SOT-23 10

BY Toshiba Si-P 2SA1200-Y SOT-89 11

BY Valvo Si-P BCX71RK SOT-23 10

BYR210 Philips Si-Di PBYR2100CT SOT-223 16

BYR215 Philips Si-Di PBYR2150CT SOT-223 16

BYR220 Philips Si-Di PBYR220CT SOT-223 16

BYR225 Philips Si-Di PBYR225CT SOT-223 16

BYR240 Philips Si-Di PBYR240CT SOT-223 16

BYR245 Philips Si-Di PBYR245CT SOT-223 16

BYR28 Philips Si-Di PBYR280CT SOT-223 16

BYR280 Philips Si-Di PBYR280CT SOT-223 16

BYR29 Philips Si-Di PBYR290CT SOT-223 16

BYR290 Philips Si-Di PBYR290CT SOT-223 16

BZ Fagor Z-Di P4SMA-43A DO-214AC 5 19

BZ Matsushita Si-N/P+R XP04313 SOT-363 2 15

BZ Siemens Si-P BCX71RL SOT-23 10

C

C Hitachi C-Di HVR17 SOD-123 2,7 19

C Hitachi C-Di HVU89 SOD-323 1,7 19

C Matsushita Si-P 2SB1219 SOT-323 2 10

C Matsushita Si-P 2SB710 SOT-23 10

C Matsushita Si-P 2SB767 SOT-89 11

C Matsushita GaAs-N-FET 2SK649 17

C Matsushita MOS-N-FET-d 3SK303 SOT-143 13

C Matsushita MOS-N-FET-d 3SK307 SOT-343 2 13

C Matsushita Si-Di MA2S784 SOD-323 1,7 19

C Rohm Diode RB521S-30 SOD-523 1,3 19

C Sanyo N-FET 2SK1375 SOT-323 2 10

C Siemens C-Di BB833 SOD-323 1,7 19

C1 Ferranti Si-N BFS38A SOT-323 2 10

C1 Hitachi Si-Di HSM88(A)S SOT-23 10

C1 Hitachi Si-Di HSM88(A)SR SOT-23 10

C1 Matsushita Z-Di MAZF043 SOT-323 1,7 19

BY … C1

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Page 55:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 46 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C1 Matsushita Z-Di MAZN043 SOT-523 1,3 19

C1 NEC MOS-P-FET-e* 2SJ559 SC-75 1,6 10

C1 Rohm Si-N/P+R FMC1A SOT-153 14

C1 Rohm Si-N/P+R UMC1N SOT-353 2 14

C1 SGS Si-P BCW29 SOT-23 10 BC558A

C1 Siliconix N-FET SST111 SOT-23 10

C1 Toshiba Si-Di 1SS352 SOD-323 1,7 19

C1 Toshiba Si-Di 1SS368 SOD-523 1,3 19

C1 Toshiba Si-Di 1SS387 SOD-523 1,3 19

C1 Ferranti Si-P BCW29 SOT-23 10

C1 Motorola Si-P BCW29 SOT-23 10

C1 Philips Si-P BCW29 SOT-23 10 BC558A

C10PH Philips Z-Di BZV85-C10 DO-41 9

C10PH Philips Z-Di BZX55-C10 DO-35 9

C10PH Philips Z-Di BZX79-C10 DO-35 9

C11PH Philips Z-Di BZV85-C11 DO-41 9

C11PH Philips Z-Di BZX55-C11 DO-35 9

C11PH Philips Z-Di BZX79-C11 DO-35 9

C12PH Philips Z-Di BZV85-C12 DO-41 9

C12PH Philips Z-Di BZX55-C12 DO-35 9

C12PH Philips Z-Di BZX79-C12 DO-35 9

C13PH Philips Z-Di BZV85-C13 DO-41 9

C13PH Philips Z-Di BZX55-C13 DO-35 9

C13PH Philips Z-Di BZX79-C13 DO-35 9

C15 NEC Si-P 2SA1612-C15 SOT-323 2 10

C15 NEC Si-P 2SA811A-C15 SOT-23 10

C15PH Philips Z-Di BZV85-C15 DO-41 9

C15PH Philips Z-Di BZX55-C15 DO-35 9

C15PH Philips Z-Di BZX79-C15 DO-35 9

C16 NEC Si-P 2SA1612-C16 SOT-323 2 10

C16 NEC Si-P 2SA811A-C16 SOT-23 10

C16PH Philips Z-Di BZV85-C16 DO-41 9

C16PH Philips Z-Di BZX55-C16 DO-35 9

C16PH Philips Z-Di BZX79-C16 DO-35 9

C17 NEC Si-P 2SA1612-C17 SOT-323 2 10

C1 … C17

http://www.serwis-elektroniki.com.pl/

Page 56:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 47 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C17 NEC Si-P 2SA811A-C17 SOT-23 10

C18 NEC Si-P 2SA1612-C18 SOT-323 2 10

C18 NEC Si-P 2SA811A-C18 SOT-23 10

C18PH Philips Z-Di BZV85-C18 DO-41 9

C18PH Philips Z-Di BZX55-C18 DO-35 9

C18PH Philips Z-Di BZX79-C18 DO-35 9

C1D NEC LIN-IC µPC2708T SOT-163 15

C1E NEC LIN-IC µPC2709T SOT-163 15

C1E NEC LIN-IC µPC2709TB SOT-363 2 15

C1F NEC LIN-IC µPC2710T SOT-163 15

C1G NEC LIN-IC µPC2711T SOT-163 15

C1G NEC LIN-IC µPC2711TB SOT-363 2 15

C1G Samsung Si-N KSC1632-G SOT-23 10

C1G Toshiba Si-N HN1C01F-GR SOT-163 15

C1G Toshiba Si-N HN1C01FU-GR SOT-363 2 15

C1H NEC LIN-IC µPC2712T SOT-163 15

C1H NEC LIN-IC µPC2712TB SOT-363 2 15

C1J NEC LIN-IC µPC2713T SOT-163 15

C1K NEC LIN-IC µPC2714T SOT-163 15

C1L NEC LIN-IC µPC2715T SOT-163 15

C1L Samsung Si-N KSC1632-L SOT-23 10

C1M NEC LIN-IC µPC2723T SOT-163 15

C1O Samsung Si-N KSC1632-O SOT-23 10

C1P NEC LIN-IC µPC2726T SOT-163 15

C1Q NEC LIN-IC µPC2745T SOT-163 15

C1Q NEC LIN-IC µPC2745TB SOT-363 2 15

C1R NEC LIN-IC µPC2746T SOT-163 15

C1R NEC LIN-IC µPC2746TB SOT-363 2 15

C1S NEC LIN-IC µPC2747T SOT-163 15

C1T NEC LIN-IC µPC2748T SOT-163 15

C1U NEC LIN-IC µPC2749T SOT-163 15

C1W NEC LIN-IC µPC2756T SOT-163 15

C1X NEC LIN-IC µPC2757T SOT-163 15

C1Y NEC LIN-IC µPC2758T SOT-163 15

C1Y Samsung Si-N KSC1632-Y SOT-23 10

C17 … C1Y

http://www.serwis-elektroniki.com.pl/

Page 57:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 48 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C1Y Toshiba Si-N HN1C01FU-Y SOT-363 2 15

C1Y Toshiba Si-N HN1C01F-Y SOT-163 15

C1Z NEC LIN-IC µPC2762T SOT-163 15

C1Z NEC LIN-IC µPC2762TB SOT-363 2 15

C2 Ferranti Si-N BFS38 SOT-323 2 10

C2 Hitachi Si-Di HSC276 SOD-523 1,3 19

C2 Hitachi Si-Di HSM276S SOT-23 10

C2 Matsushita Z-Di MAZF047 SOD-323 1,7 19

C2 Matsushita Z-Di MAZN047 SOD-523 1,3 19

C2 Rohm Z-Di EDZ5.6B SC-79 1,3 19

C2 Rohm Si-N/P+R FMC2A SOT-153 14

C2 Rohm Z-Di UDZ5.6B SOD-323 1,7 19

C2 Rohm Z-Di UDZS5.6B SOD-323 1,7 19

C2 Rohm Si-N/P+R UMC2N SOT-353 2 14

C2 SGS Si-P BCW30 SOT-23 10 BC558B

C2 Siliconix N-FET SST112 SOT-23 10

C2 Thomson Si-Di SMBY301-200 SOD-15 8 19

C2 Valvo Si-P BFQ32C 17

C2 Ferranti Si-P BCW30 SOT-23 10

C2 Motorola Si-P BCW30 SOT-23 10

C2 Philips Si-P BCW30 SOT-23 10 BC558B

C20 Sanyo N-FET 2SK595-20 SOT-23 10

C20PH Philips Z-Di BZV85-C20 DO-41 9

C20PH Philips Z-Di BZX55-C20 DO-35 9

C20PH Philips Z-Di BZX79-C20 DO-35 9

C21 Sanyo N-FET 2SK595-21 SOT-23 10

C22 Sanyo N-FET 2SK595-22 SOT-23 10

C22PH Philips Z-Di BZV85-C22 DO-41 9

C22PH Philips Z-Di BZX55-C22 DO-35 9

C22PH Philips Z-Di BZX79-C22 DO-35 9

C23 Sanyo N-FET 2SK595-23 SOT-23 10

C24 Sanyo N-FET 2SK595-24 SOT-23 10

C24PH Philips Z-Di BZV85-C24 DO-41 9

C24PH Philips Z-Di BZX55-C24 DO-35 9

C24PH Philips Z-Di BZX79-C24 DO-35 9

C1Y … C24PH

http://www.serwis-elektroniki.com.pl/

Page 58:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 49 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C25 NEC Si-P 2SA1247-C25 SOT-23 10

C26 NEC Si-P 2SA1247-C26 SOT-23 10

C27 NEC Si-P 2SA1247-C27 SOT-23 10

C27PH Philips Z-Di BZV85-C27 DO-41 9

C27PH Philips Z-Di BZX55-C27 DO-35 9

C27PH Philips Z-Di BZX79-C27 DO-35 9

C28 NEC Si-P 2SA1247-C28 SOT-23 10

C2A NEC LIN-IC µPC2763T SOT-163 15

C2A NEC LIN-IC µPC2763TB SOT-363 2 15

C2B NEC LIN-IC µPC8102T SOT-163 15

C2C NEC LIN-IC µPC8103T SOT-163 15

C2D NEC LIN-IC µPC8106T SOT-163 15

C2F NEC LIN-IC µPC8108T SOT-163 15

C2G NEC LIN-IC µPC8109T SOT-163 15

C2H NEC LIN-IC µPC2771T SOT-163 15

C2H NEC LIN-IC µPC2771TB SOT-363 2 15

C2K NEC LIN-IC µPC8112T SOT-163 15

C2L NEC LIN-IC µPC2776T SOT-163 15

C2L NEC LIN-IC µPC2776TB SOT-363 2 15

C2M NEC LIN-IC µPC8119T SOT-163 15

C2N NEC LIN-IC µPC8120T SOT-163 15

C2S NEC LIN-IC µPC2791TB SOT-363 2 15

C2T NEC LIN-IC µPC2792TB SOT-363 2 15

C2V4PH Philips Z-Di BZX55-C2V4 DO-35 9

C2V4PH Philips Z-Di BZX79-C2V4 DO-35 9

C2V7PH Philips Z-Di BZX55-C2V7 DO-35 9

C2V7PH Philips Z-Di BZX79-C2V7 DO-35 9

C3 Ferranti Si-N BFS39 SOT-323 2 10

C3 Hitachi Si-Di HSM88(S)R SOT-23 10

C3 KEC Si-Di KDS226 SOT-23 10

C3 Motorola Si-P MMBT4126 SOT-23 10

C3 Philips Si-Di 1PS302 SC-70 2 10

C3 Rohm Si-N/P+R FMC3A SOT-153 14

C3 Rohm Si-N/P+R UMC3N SOT-353 2 14

C3 Samsung Si-P KST4126 SOT-23 10

C25 … C3

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Page 59:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 50 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C3 Samsung Si-P MMBT4126 SOT-23 10

C3 Siemens Si-P SMBT4126 SOT-23 10 BC858

C3 Siliconix N-FET SST113 SOT-23 10

C3 Thomson Si-Di SMBY301-300 SOD-15 8 19

C3 Toshiba Si-Di 1SS226 SOT-23 10

C3 Toshiba Si-Di 1SS302 SOT-323 2 10

C3 Toshiba Si-Di 1SS362 SS Mini 1,6 10

C30PH Philips Z-Di BZV85-C30 DO-41 9

C30PH Philips Z-Di BZX55-C30 DO-35 9

C30PH Philips Z-Di BZX79-C30 DO-35 9

C33PH Philips Z-Di BZV85-C33 DO-41 9

C33PH Philips Z-Di BZX55-C33 DO-35 9

C33PH Philips Z-Di BZX79-C33 DO-35 9

C36PH Philips Z-Di BZV85-C36 DO-41 9

C36PH Philips Z-Di BZX55-C36 DO-35 9

C36PH Philips Z-Di BZX79-C36 DO-35 9

C39PH Philips Z-Di BZV85-C39 DO-41 9

C39PH Philips Z-Di BZX55-C39 DO-35 9

C39PH Philips Z-Di BZX79-C39 DO-35 9

C3A Toshiba Si-N HN1C03F-A SOT-163 15

C3B Toshiba Si-N HN1C03F-B SOT-163 15

C3T Philips Si-Di 1PS226 SOT-23 10

C3V0PH Philips Z-Di BZX55-C3V0 DO-35 9

C3V0PH Philips Z-Di BZX79-C3V0 DO-35 9

C3V3PH Philips Z-Di BZX55-C3V3 DO-35 9

C3V3PH Philips Z-Di BZX79-C3V3 DO-35 9

C3V6PH Philips Z-Di BZV85-C3V6 DO-41 9

C3V6PH Philips Z-Di BZX55-C3V6 DO-35 9

C3V6PH Philips Z-Di BZX79-C3V6 DO-35 9

C3V9PH Philips Z-Di BZV85-C3V9 DO-41 9

C3V9PH Philips Z-Di BZX55-C3V9 DO-35 9

C3V9PH Philips Z-Di BZX79-C3V9 DO-35 9

C4 AEG C-Di BB404C 10 BB804

C4 Ferranti Si-P BCW29R SOT-23 10

C4 Ferranti Si-P BFS40A SOT-323 2 10

C3 … C4

http://www.serwis-elektroniki.com.pl/

Page 60:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C4 Hitachi Si-Di HSM88WK SOT-23 10

C4 ITT C-Di BB404C 10 BB804

C4 Mitsubishi Si-Di MC804 SOT-23 10

C4 NEC Si-P 2SA811 SOT-23 10

C4 Philips Si-P BCW29R SOT-23 10 BC558A

C4 Rohm Si-N/P+R FMC4A SOT-153 14

C4 Rohm Si-N/P+R UMC4N SOT-353 2 14

C4 SGS Si-P BCW29R SOT-23 10 BC558A

C4 Thomson Si-Di SMBY301-400 SOD-15 8 19

C4 Valvo Si-P BCW29R SOT-23 10

C43PH Philips Z-Di BZV85-C43 DO-41 9

C43PH Philips Z-Di BZX55-C43 DO-35 9

C43PH Philips Z-Di BZX79-C43 DO-35 9

C47PH Philips Z-Di BZV85-C47 DO-41 9

C47PH Philips Z-Di BZX55-C47 DO-35 9

C47PH Philips Z-Di BZX79-C47 DO-35 9

C4V3PH Philips Z-Di BZV85-C4V3 DO-41 9

C4V3PH Philips Z-Di BZX55-C4V3 DO-35 9

C4V3PH Philips Z-Di BZX79-C4V3 DO-35 9

C4V7PH Philips Z-Di BZV85-C4V7 DO-41 9

C4V7PH Philips Z-Di BZX55-C4V7 DO-35 9

C4V7PH Philips Z-Di BZX79-C4V7 DO-35 9

C5 Ferranti Si-P BCW30R SOT-23 10

C5 Ferranti Si-P BFS40 SOT-323 2 10

C5 Hitachi Si-Di HSM107S SOT-23 10

C5 NEC Si-P 2SA811-C5 SOT-23 10

C5 Philips Si-P BCW30R SOT-23 10 BC558B

C5 Rohm Si-N/P+R FMC5A SOT-153 14

C5 Rohm Z-Di UDZ30B SOD-323 1,7 19

C5 Rohm Si-N/P+R UMC5N SOT-353 2 14

C5 Samsung Si-P MMBA811C5 SOT-23 10

C5 SGS Si-P BCW30R SOT-23 10 BC558B

C5 Siemens GaAs-N-FET-d CFY25-17 SOT-173 17

C5 Siliconix MOS-P-FET-e Si2315DS SOT-23 10

C5 Valvo Si-P BCW30R SOT-23 10

C4 … C5

http://www.serwis-elektroniki.com.pl/

Page 61:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 52 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C51PH Philips Z-Di BZV85-C51 DO-41 9

C51PH Philips Z-Di BZX55-C51 DO-35 9

C51PH Philips Z-Di BZX79-C51 DO-35 9

C56PH Philips Z-Di BZV85-C56 DO-41 9

C56PH Philips Z-Di BZX55-C56 DO-35 9

C56PH Philips Z-Di BZX79-C56 DO-35 9

C5R AEG GaAs-FET CF930R SOT-143 13

C5V1PH Philips Z-Di BZV85-C5V1 DO-41 9

C5V1PH Philips Z-Di BZX55-C5V1 DO-35 9

C5V1PH Philips Z-Di BZX79-C5V1 DO-35 9

C5V6PH Philips Z-Di BZV85-C5V6 DO-41 9

C5V6PH Philips Z-Di BZX55-C5V6 DO-35 9

C5V6PH Philips Z-Di BZX79-C5V6 DO-35 9

C6 Ferranti Si-P BFS41 SOT-323 2 10

C6 Hitachi Si-Di HSM198S SOT-23 10

C6 NEC Si-P 2SA811-C6 SOT-23 10

C6 Rohm Si-N/P+R FMC6A SOT-153 14

C6 Samsung Si-P MMBA811C6 SOT-23 10

C6 Siemens GaAs-N-FET-d CFY25-20 SOT-173 17

C62PH Philips Z-Di BZV85-C62 DO-41 9

C62PH Philips Z-Di BZX55-C62 DO-35 9

C62PH Philips Z-Di BZX79-C62 DO-35 9

C68PH Philips Z-Di BZV85-C68 DO-41 9

C68PH Philips Z-Di BZX55-C68 DO-35 9

C68PH Philips Z-Di BZX79-C68 DO-35 9

C6V2PH Philips Z-Di BZV85-C6V2 DO-41 9

C6V2PH Philips Z-Di BZX55-C6V2 DO-35 9

C6V2PH Philips Z-Di BZX79-C6V2 DO-35 9

C6V8PH Philips Z-Di BZV85-C6V8 DO-41 9

C6V8PH Philips Z-Di BZX55-C6V8 DO-35 9

C6V8PH Philips Z-Di BZX79-C6V8 DO-35 9

C7 Hitachi Si-Di HSM88WA SOT-23 10

C7 NEC Si-P 2SA811-C7 SOT-23 10

C7 Rohm Si-N/P+R FMC7A SOT-153 14

C7 Samsung Si-P MMBA811C7 SOT-23 10

C51PH … C7

http://www.serwis-elektroniki.com.pl/

Page 62:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C7 Sanyo Si-N 2SC5231-C7 SC-75 1,6 10

C7 Siemens GaAs-N-FET-d CFY25-23 SOT-173 17

C7 Philips Si-P BCF29 SOT-23 10 BC559A

C71 Valvo Si-P BCW61A SOT-23 10

C72 Valvo Si-P BCW61B SOT-23 10

C73 Valvo Si-P BCW61C SOT-23 10

C74 Valvo Si-P BCW61D SOT-23 10

C75PH Philips Z-Di BZV85-C75 DO-41 9

C75PH Philips Z-Di BZX55-C75 DO-35 9

C75PH Philips Z-Di BZX69-C75 DO-35 9

C77 Philips Si-P BCF29R SOT-23 10 BC559A

C77 Valvo Si-P BCF29R SOT-23 10

C7V5PH Philips Z-Di BZV85-C7V5 DO-41 9

C7V5PH Philips Z-Di BZX55-C7V5 DO-35 9

C7V5PH Philips Z-Di BZX79-C7V5 DO-35 9

C8 Hitachi Si-Di HSM198SR SOT-23 10

C8 NEC Si-P 2SA811-C8 SOT-23 10

C8 Samsung Si-P MMBA811C8 SOT-23 10

C8 Sanyo Si-N 2SC5231-C8 SC-75 1,6 10

C8 Philips Si-P BCF30 SOT-23 10 BC559B

C8V2PH Philips Z-Di BZV85-C8V2 DO-41 9

C8V2PH Philips Z-Di BZX55-C8V2 DO-35 9

C8V2PH Philips Z-Di BZX79-C8V2 DO-35 9

C9 Hitachi Si-Di HSM276SR SOT-23 10

C9 Philips Si-P BCF30R SOT-23 10 BC559B

C9 Sanyo Si-N 2SC5231-C9 SC-75 1,6 10

C9 Toshiba Si-Di 1SS307 SOT-23 10

C9 Valvo Si-P BCF30R SOT-23 10

C90M Fujitsu Si-Di ERC90M… 2d

C91 Philips Si-P BCV62 SOT-143 13

C91 Siemens Si-P BCV62 SOT-143 13

C91 Valvo Si-P BCV62 SOT-143 13

C92 Philips Si-P BCV62A SOT-143 13

C92 Siemens Si-P BCV62A SOT-143 13

C92 Valvo Si-P BCV62A SOT-143 13

C7 … C92

http://www.serwis-elektroniki.com.pl/

Page 63:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 54 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

C93 Philips Si-P BCV62B SOT-143 13

C93 Siemens Si-P BCV62B SOT-143 13

C93 Valvo Si-P BCV62B SOT-143 13

C94 Philips Si-P BCV62C SOT-143 13

C94 Siemens Si-P BCV62C SOT-143 13

C94 Valvo Si-P BCV62C SOT-143 13

C95 Philips Si-P BCV64 SOT-143 13

C96 Philips Si-P BCV64B SOT-143 13

C9V1PH Philips Z-Di BZV85-C9V1 DO-41 9

C9V1PH Philips Z-Di BZX55-C9V1 DO-35 9

C9V1PH Philips Z-Di BZX79-C9V1 DO-35 9

CA Ferranti Si-P BCW61RA SOT-23 10

CA Hitachi Si-N 2SD1368-CA SOT-89 11

CA ITT C-Di BB510 SOT-23 10

CA Matsushita Si-N/P+R XN4314 SOT-363 15

CA Matsushita Si-N/P+R XP4314 SOT-363 2 15

CA Motorola Si-N BCX68 SOT-89 11 BC368

CA NEC MOS-P-FET-e µPA503T SOT-153 14

CA Philips Si-N BCP68 SOT-223 16

CA Philips Si-N BCX68 SOT-89 11 BC368

CA Rohm Si-P 2SA1885 SS Mini 1,6 10

CA Rohm Si-P 2SA1886 SOT-323 2 10

CA Sanyo Si-P 2SA1866 SC-75 1,6 10

CA Sanyo Si-N 2SC3645 SOT-89 11

CA Siemens Si-N BCX68 SOT-89 11 BC368

CA Siemens Si-N BFS18 SOT-23 10

CA Siliconix N-FET SST4391 SOT-23 10

CA Valvo Si-N BCX68 SOT-89 11

CA Zetex C-Di ZMV829B SOD-323 1,7 19

CAC Philips Si-N BC868 SOT-89 11 BC368

CAC Valvo Si-N BC868 SOT-89 11

CB Ferranti Si-P BCW61RB SOT-23 10

CB Hitachi Si-N 2SD1368-CB SOT-89 11

CB Matsushita Si-N/P+R XN4315 SOT-163 15

CB Matsushita Si-N/P+R XP4315 SOT-363 2 15

C93 … CB

http://www.serwis-elektroniki.com.pl/

Page 64:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

CB Motorola Si-N BCX68-10 SOT-89 11

CB NEC MOS-P-FET-e µPA573T SOT-353 2 14

CB Philips Si-N BCX68-10 SOT-89 11

CB Rohm Si-N 2SC4997 SS Mini 1,6 10

CB Rohm Si-N 2SC4998 SOT-323 2 10

CB Rohm Si-N RXT2222A SOT-89 11

CB Sanyo Si-N 2SC3646 SOT-89 11

CB Siemens Si-N BCX68-10 SOT-89 11

CB Siemens Si-N BFS19 SOT-23 10

CB Siliconix N-FET SST4392 SOT-23 10

CB Valvo Si-N BCX68-10 SOT-89 11

CB Zetex C-Di ZMV830B SOD-323 1,7 19

CBC Philips Si-N BC868-10 SOT-89 11 BC368-10

CBG Toshiba Si-N 2SC3324-GR SOT-23 10

CBH Thomson Z-Di SMBJ22CA DO-214AA 5×3,5 19

CBJ Thomson Z-Di SMBJ40CA DO-214AA 5×3,5 19

CBL Toshiba Si-N 2SC3324-BL SOT-23 10

CBM Thomson Z-Di SMBJ70CA DO-214AA 5×3,5 19

CBN Rohm Si-N 2SC4132-N SOT-89 11

CBP Rohm Si-N 2SC4132-P SOT-89 11

CBQ Rohm Si-N 2SC4132-Q SOT-89 11

CBQ Thomson Z-Di SMBJ100CA DO-214AA 5×3,5 19

CBR Rohm Si-N 2SC4132-R SOT-89 11

CC Ferranti Si-P BCW61RC SOT-23 10

CC Hitachi Si-P 2SA1122-C SOT-23 10

CC Hitachi Si-N 2SD1368-CC SOT-89 11

CC Mitsubishi Si-P 2SA1364-C SOT-89 11

CC Motorola Si-N BCX68-16 SOT-89 11

CC Philips Si-N BCX68-16 SOT-89 11

CC Sanyo Si-N 2SC3647 SOT-89 11

CC Siemens Si-N BCX68-16 SOT-89 11

CC Siemens Si-N BF544 SOT-23 10

CC Siemens Si-N BF554 SOT-23 10 BF799

CC Siliconix N-FET SST4393 SOT-23 10

CC Thomson Si-N BF554 SOT-23 10 BF799

CB … CC

http://www.serwis-elektroniki.com.pl/

Page 65:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 56 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

CC Valvo Si-N BCX68-16 SOT-89 11

CC Zetex C-Di ZMV831B SOD-323 1,7 19

CCA Toshiba Si-N 2SC3326A SOT-23 10

CCB Toshiba Si-N 2SC3326B SOT-23 10

CCC Philips Si-N BC868-16 SOT-89 11 BC368-16

CD Fagor Z-Di P4SMA-47 DO-214AC 5 19

CD Ferranti Si-P BCW61RD SOT-23 10

CD Hitachi Si-P 2SA1122-D SOT-23 10

CD Mitsubishi Si-P 2SA1364-D SOT-89 11

CD Mitsubishi Si-P 2SA1366-D SOT-23 10

CD Motorola Si-N BCX68-25 SOT-89 11

CD Motorola Si-N BSS81B SOT-23 10

CD Philips Si-N BCX68-25 SOT-89 11

CD Rohm Si-N RXT3904 SOT-89 11

CD Sanyo Si-N 2SC3648 SOT-89 11

CD Sanyo Si-N 2SC4673 SOT-89 11

CD Siemens Si-N BCX68-25 SOT-89 11

CD Valvo Si-N BCX68-25 SOT-89 11

CD Zetex C-Di ZMV832B SOD-323 1,7 19

CD Siemens Si-N BSS81B SOT-23 10

CDC Philips Si-N BC868-25 SOT-89 11 BC368-25

CDC Sanyo Si-N 2SC4673-C SOT-89 11

CDD Sanyo Si-N 2SC4673-D SOT-89 11

CDE Sanyo Si-N 2SC4673-E SOT-89 11

CE Fagor Z-Di P4SMA-47A DO-214AC 5 19

CE Hitachi Si-P 2SA1122-E SOT-23 10

CE Mitsubishi Si-P 2SA1364-E SOT-89 11

CE Mitsubishi Si-P 2SA1366-E SOT-23 10

CE Motorola Si-P BCX69 SOT-89 11 BC369

CE Philips Si-P BCP69 SOT-223 16

CE Philips Si-P BCX69 SOT-89 11 BC369

CE Sanyo Si-N 2SC3649 SOT-89 11

CE Siemens Si-P BCX69 SOT-89 11 BC369

CE Valvo Si-P BCX69 SOT-89 11

CE Zetex C-Di ZMV833B SOD-323 1,7 19

CC … CE

http://www.serwis-elektroniki.com.pl/

Page 66:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

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Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

CE Ferranti Si-N BSS79B SOT-23 10

CE Motorola Si-N BSS79B SOT-23 10

CE Siemens Si-N BSS79B SOT-23 10

CEC Philips Si-P BC869 SOT-89 11 BC369

CEC Philips Si-P BC869A SOT-89 11 2SA1364

CEC Valvo Si-P BC869 SOT-89 11

CEN Rohm Si-N 2SC4505-N SOT-89 11

CEO Toshiba Si-N 2SC3325-O SOT-23 10

CEP Rohm Si-N 2SC4505-P SOT-89 11

CEQ Rohm Si-N 2SC4505-Q SOT-89 11

CEY Toshiba Si-N 2SC3325-Y SOT-23 10

CF Fagor Z-Di P4SMA-51 DO-214AC 5 19

CF Mitsubishi Si-P 2SA1366-F SOT-23 10

CF Motorola Si-P BCX69-10 SOT-89 11

CF Philips Si-P BCX69-10 SOT-89 11

CF Sanyo Si-N 2SC3650 SOT-89 11

CF Siemens Si-P BCX69-10 SOT-89 11

CF Valvo Si-P BCX69-10 SOT-89 11

CF Zetex C-Di ZMV834B SOD-323 1,7 19

CF Ferranti Si-N BSS79C SOT-23 10

CF Motorola Si-N BSS79C SOT-23 10

CF Siemens Si-N BSS79C SOT-23 10

CF1 AEG GaAs-FET CF910 SOT-143 13

CF3 AEG GaAs-FET CF912 SOT-143 13

CF4 AEG GaAs-FET CF922 SOT-143 13

CF5 AEG GaAs-FET CF930 SOT-143 13

CFQ Rohm Si-N 2SD2150-Q SOT-89 11

CFR Rohm Si-N 2SD2150-R SOT-89 11

CFS Rohm Si-N 2SD2150-S SOT-89 11

CG Fagor Z-Di P4SMA-51A DO-214AC 5 19

CG Ferranti Si-P BCX71RG SOT-23 10

CG KEC Si-P KTA2017-GR SOT-323 2 10

CG Motorola Si-P BCX69-16 SOT-89 11

CG Motorola Si-N BSS81C SOT-23 10

CG Philips Si-P BCX69-16 SOT-89 11

CE … CG

http://www.serwis-elektroniki.com.pl/

Page 67:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

CG Sanyo Si-N 2SC3651 SOT-89 11

CG Siemens Si-P BCX69-16 SOT-89 11

CG Thomson Z-Di SMAJ28A DO-214AC 5×2,5 19

CG Toshiba Si-P 2SA1163-GR SOT-23 10

CG Toshiba Si-P 2SA1587-GR SOT-23 10

CG Valvo Si-P BCX69-16 SOT-89 11

CG Zetex C-Di ZMV835B SOD-323 1,7 19

CG Siemens Si-N BSS81C SOT-23 10

CGC Philips Si-P BC869-10 SOT-89 11 BC369-10

CGG Toshiba Si-N 2SC3426-GR SOT-23 10

CGL Toshiba Si-N 2SC3426-BL SOT-23 10

CGP Rohm Si-N 2SC5053-P SOT-89 11

CGQ Rohm Si-N 2SC5053-Q SOT-89 11

CGR Rohm Si-N 2SC5053-R SOT-89 11

CGY Toshiba Si-N 2SC3426-Y SOT-23 10

CH Fagor Z-Di P4SMA-56 DO-214AC 5 19

CH Hitachi Si-P 2SB1002-CH SOT-89 11

CH Motorola Si-P BCX69-25 SOT-89 11

CH Philips Si-P BCX69-25 SOT-89 11

CH Sanyo Si-Di 1SS351 SOT-23 10

CH Sanyo Si-N 2SC4272 SOT-89 11

CH Siemens Si-P BCX69-25 SOT-89 11

CH Thomson Z-Di SMAJ28CA DO-214AC 5×2,5 19

CH Valvo Si-P BCX69-25 SOT-89 11

CH Motorola Si-P BSS80B SOT-23 10

CH Siemens Si-P BSS80B SOT-23 10

CHC Philips Si-P BC869-… SOT-89 11

CHO Toshiba Si-N 2SC3437-O SOT-23 10

CHO Toshiba Si-N 2SC4667-O SOT-323 2 10

CHR Toshiba Si-N 2SC3437-R SOT-23 10

CHR Toshiba Si-N 2SC4667-R SOT-323 2 10

CHY Toshiba Si-N 2SC3437-Y SOT-23 10

CHY Toshiba Si-N 2SC4667-Y SOT-323 2 10

CI Hitachi Si-N 2SD1777 SOT-143 13

CI Sanyo Si-N 2SC4080 SOT-89 11

CG … CI

http://www.serwis-elektroniki.com.pl/

Page 68:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

CJ Hitachi Si-P 2SB1002-CJ SOT-89 11

CJ Sanyo Si-N 2SC4390 SOT-89 11

CJ Sanyo MOS-N-FET-d 2SK1067 SOT-323 2 10

CJ Sanyo MOS-N-FET-d 2SK543 SOT-23 10

CJ Motorola Si-P BSS80C SOT-23 10

CJ Siemens Si-P BSS80C SOT-23 10

CK Fagor Z-Di P4SMA-56A DO-214AC 5 19

CK Ferranti Si-P BCX71RK SOT-23 10

CK Matsushita Si-P+R XN6114 SOT-163 15

CK Matsushita Si-P+R XP6114 SOT-363 2 15

CK NEC Si-N 2SD999-CK SOT-89 11

CK Sanyo Si-N 2SC4520 SOT-89 11

CK Thomson Z-Di SMAJ30A DO-214AC 5×2,5 19

CL Fagor Z-Di P4SMA-62 DO-214AC 5 19

CL KEC Si-P KTA2017-BL SOT-323 2 10

CL NEC Si-N 2SD999-CL SOT-89 11

CL Sanyo Si-P 2SA1342 SOT-23 10

CL Sanyo Si-P 2SA1677 SOT-323 2 10

CL Sanyo Si-N 2SC4521 SOT-89 11

CL Thomson Z-Di SMAJ30CA DO-214AC 5×2,5 19

CL Toshiba Si-P 2SA1163-BL SOT-23 10

CL Toshiba Si-P 2SA1587-BL SOT-323 2 10

CL Ferranti Si-P BSS82B SOT-23 10

CL Motorola Si-P BSS82B SOT-23 10

CL Siemens Si-P BSS82B SOT-23 10

CM Fagor Z-Di P4SMA-62A DO-214AC 5 19

CM NEC Si-N 2SD999-CM SOT-89 11

CM Sanyo Si-N 2SC4504 SOT-89 11

CM Thomson Z-Di SMAJ33A DO-214AC 5×2,5 19

CM Ferranti Si-P BSS82C SOT-23 10

CM Motorola Si-P BSS82C SOT-23 10

CM Siemens Si-P BSS82C SOT-23 10

CN Fagor Z-Di P4SMA-68 DO-214AC 5 19

CN Sanyo Si-N 2SC4548 SOT-89 11

CN Sanyo Si-N 2SC4853 SOT-323 2 10

CJ … CN

http://www.serwis-elektroniki.com.pl/

Page 69:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

CN Sanyo Si-N 2SC4854 SOT-23 10

CN Sanyo Si-N 2SC4855 SOT-143 13

CN Sanyo Si-N 2SC5537 (SSFP) 1,4 10

CN Thomson Z-Di SMAJ33CA DO-214AC 5×2,5 19

CN3 Sanyo Si-N 2SC4853-3 SOT-323 2 10

CN3 Sanyo Si-N 2SC4854-3 SOT-23 10

CN3 Sanyo Si-N 2SC4855-3 SOT-143 13

CN4 Sanyo Si-N 2SC4853-4 SOT-323 2 10

CN4 Sanyo Si-N 2SC4854-4 SOT-23 10

CN4 Sanyo Si-N 2SC4855-4 SOT-143 13

CN5 Sanyo Si-N 2SC4853-5 SOT-323 2 10

CN5 Sanyo Si-N 2SC4854-5 SOT-23 10

CN5 Sanyo Si-N 2SC4855-5 SOT-143 13

CO KEC Si-N KTC4373-O SOT-89 11

CO Toshiba Si-N 2SC2881-O SOT-89 11

CO Toshiba Si-N 2SC4209-O SOT-23 10

CO Toshiba Si-N 2SC5087-O SOT-143 13

CP Fagor Z-Di P4SMA-68A DO-214AC 5 19

CP Matsushita Si-P 2SB767-P SOT-89 11

CP NEC Si-N HC1L2N SOT-89 11

CP Rohm Si-N 2SC2411-CP (MMT) ~10

CP Rohm Si-N 2SC2411K-P SOT-23 10

CP Rohm Si-N 2SC4097-P SOT-323 2 10

CP Sanyo Si-N 2SC4705 SOT-89 11

CQ Fagor Z-Di P4SMA-75 DO-214AC 5 19

CQ Matsushita Si-P 2SB1219-Q SOT-323 2 10

CQ Matsushita Si-P 2SB1582-Q (T Mini) ~10

CQ Matsushita Si-P 2SB710-Q SOT-23 10

CQ Matsushita Si-P 2SB767-Q SOT-89 11

CQ NEC Si-N HC1A3M SOT-89 11

CQ Philips Si-P 2PB1219Q SOT-323 2 10

CQ Philips Si-P 2PB710Q SOT-23 10

CQ Rohm Si-N 2SC2411-CQ (MMT) ~10

CQ Rohm Si-N 2SC2411K-Q SOT-23 10

CQ Rohm Si-N 2SC4097-Q SOT-323 2 10

CN … CQ

http://www.serwis-elektroniki.com.pl/

Page 70:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

CR Fagor Z-Di P4SMA-75A DO-214AC 5 19

CR Hitachi Si-N 2SC4422 SOT-89 11

CR Matsushita Si-P 2SB1219R SOT-323 2 10

CR Matsushita Si-P 2SB1582-R (T Mini) ~10

CR Matsushita Si-P 2SB710-R SOT-23 10

CR Matsushita Si-P 2SB767-R SOT-89 11

CR Matsushita Si-N XP6210 SOT-363 2 15

CR NEC Si-N HC1F3M SOT-89 11

CR Philips Si-P 2PB1219R SOT-323 2 10

CR Philips Si-P 2PB710R SOT-23 10

CR Rohm Si-N 2SC2411-CR (MMT) ~10

CR Rohm Si-N 2SC2411K-R SOT-23 10

CR Rohm Si-N 2SC4097-R SOT-323 2 10

CS Fagor Z-Di P4SMA-82 DO-214AC 5 19

CS Hitachi Si-N 2SD1870 SOT-89 11

CS Matsushita Si-P 2SB1219-S SOT-323 2 10

CS Matsushita Si-P 2SB1582-S (T Mini) ~10

CS Matsushita Si-P 2SB710-S SOT-23 10

CS Matsushita Si-P 2SB767-S SOT-89 11

CS NEC Si-N HC1F3P SOT-89 11

CS Philips Si-P 2PB1219S SOT-323 2 10

CS Philips Si-P 2PB710S SOT-23 10

CS Sanyo Si-P 2SA1682 SOT-23 10

CT Fagor Z-Di P4SMA-82A DO-214AC 5 19

CT Hitachi Si-N-Darl+Di 2SD1472 SOT-89 11

CT NEC Si-N HC1L2Q SOT-89 11

CT Sanyo Si-N 2SC4984 SOT-89 11

CT Sanyo Si-N 2SD1935 SOT-23 10

CTS Sanyo Si-N 2SC4984-S SOT-89 11

CTT Sanyo Si-N 2SC4984-T SOT-89 11

CTU Sanyo Si-N 2SC4984-U SOT-89 11

CU Fagor Z-Di P4SMA-91 DO-214AC 5 19

CU NEC Si-N HC1F2Q SOT-89 11

CUJ Thomson Z-Di SMBJ40A DO-214AA 5×3,5 19

CUM Thomson Z-Di SMBJ70A DO-214AA 5×3,5 19

CR … CUM

http://www.serwis-elektroniki.com.pl/

Page 71:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 62 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

C

CUQ Thomson Z-Di SMBJ100A DO-214AA 5×3,5 19

CV Fagor Z-Di P4SMA-91A DO-214AC 5 19

CV Matsushita Si-P XN4404 SOT-163 15

CV Sanyo PIN-Di 1SV234 SOT-23 10

CV Sanyo PIN-Di 1SV246 SOT-323 2 10

CW Fagor Z-Di P4SMA-100 DO-214AC 5 19

CW Matsushita Si-N/P+R XN4381 SOT-163 15

CX Fagor Z-Di P4SMA-100A DO-214AC 5 19

CX Matsushita MOS-N-FET-d 3SK227 SOT-143 13

CX Matsushita MOS-N-FET-d 3SK271 SOT-343 2 13

CX NEC Si-N HC1A4A SOT-89 11

CX Thomson Z-Di SMAJ48A DO-214AC 5×2,5 19

CY Fagor Z-Di P4SMA-110 DO-214AC 5 19

CY Hitachi MOS-P-FET-e 2SJ186 SOT-89 11

CY KEC Si-N KTC4373-Y SOT-89 11

CY Sanyo Si-N 2SC3396 SOT-23 10

CY Sanyo Si-N 2SC4397 SOT-323 2 10

CY Sanyo Si-N 2SC5229 SOT-89 11

CY Siemens Si-N BFS18R SOT-23 10

CY Thomson Z-Di SMAJ48CA DO-214AC 5×2,5 19

CY Toshiba Si-N 2SC2881-Y SOT-89 11

CY Toshiba Si-N 2SC4209-Y SOT-23 10

CY Toshiba Si-N 2SC5087-Y SOT-143 13

CYQ Matsushita Si-N 2SC4661-Q SOT-323 2 10

CYR Matsushita Si-N 2SC4661-R SOT-323 2 10

CYS Matsushita Si-N 2SC4661-S SOT-323 2 10

CZ Fagor Z-Di P4SMA-110A DO-214AC 5 19

CZ Sanyo Si-N 2SC5347 SOT-89 11

CZ Siemens Si-N BFS19R SOT-23 10

czarny Philips C-Di BB249 SOD-80

CZD Sanyo Si-N 2SC5347-D SOT-89 11

CZE Sanyo Si-N 2SC5347-E SOT-89 11

czerw. Philips C-Di BB620 SOD-123 2,7 19

czerw. Rohm PIN-Di BA682 MiniMELF 3,4×1,6 20 BA482

czerw. Siemens C-Di BB620 SOD-123 2,7 19

CUQ … czerw.

http://www.serwis-elektroniki.com.pl/

Page 72:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 63 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

czerw. LED LRS250-CO SOT-23

czerw. LED LSS250-DO SOT-23

czerw. LED LSS259-BO SOT-23

czerw./pom. ITT PIN-Di BA683 MiniMELF 3,4×1,6 20 BA483

czerw./pom. Siemens PIN-Di BA683 MiniMELF 3,4×1,6 20 BA483

czerw./ziel. LED LUS250-DO SOT-23

CZF Sanyo Si-N 2SC5347-F SOT-89 11

D

D Hitachi PIN-Di HVU187 SOD-323 1,7 19

D Matsushita Si-P 2SB1219A SOT-323 2 10

D Matsushita Si-P 2SB710A SOT-23 10

D Matsushita Si-P 2SB789 SOT-89 11

D Matsushita MOS-N-FET-d 3SK304 SOT-143 13

D Matsushita MOS-N-FET-d 3SK308 SOT-343 2 13

D Rohm Diode 1SS376 SOD-323 1,7 19

D Rohm Si-Di RB551V-30 SOD-323 1,7 19

D Sanyo Si-P 2SA1687 SOT-323 2 10

D Sanyo N-FET 2SK2219 SOT-323 2 10

D Siemens C-Di BB659 (SCD-80) 1,3 19

D0 Siliconix MOS-N-FET-e Si2320DS SOT-23 10

D01 Thomson Si-Di SD914 SOT-23 10

D1 Ferranti Si-Di BAW63 SOT-323 2 10

D1 Matsushita Z-Di MAZF051 SOD-323 1,7 19

D1 Matsushita Z-Di MAZN051 SOD-523 1,3 19

D1 NEC MOS-N-FET-e* 2SK3107 SC-75 1,6 10

D1 Rohm Si-N/P+R IMD1A SOT-163 15

D1 Sanyo Si-N 2SC5277-D1 SC-75 1,6 10

D1 Siliconix MOS-N-FET-e SST211 SOT-23 10

D1 Valvo Si-N BCW31 SOT-23 10 BC548A

D1 Ferranti Si-N BCW31 SOT-23 10 BC548A

D1 Philips Si-N BCW31 SOT-23 10

D10 Rohm Si-N/P+R IMD10A SOT-163 15

D10 Thomson Si-Di SMBYW04-100 SOD-15 8 19

D10N05 RCA MOS-N-FET-e RFD10N05 TO-251, 252 8

czerw. … D10N05

http://www.serwis-elektroniki.com.pl/

Page 73:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

D12 Rohm Si-N/P+R UMD12N SOT-363 2 15

D14 Rohm Si-N/P+R IMD14 SOT-163 15

D14N05 RCA MOS-N-FET-e RFD14N05 TO-251, 252 8

D15 NEC Si-N 2SC1622A-D15 SOT-23 10

D15 NEC Si-N 2SC4180-D15 SOT-323 2 10

D15 Thomson Si-Di SMBYW04-150 SOD-15 8 19

D16 NEC Si-N 2SC1662A-D16 SOT-23 10

D16 NEC Si-N 2SC4180-D16 SOT-323 2 10

D16 Rohm Si-N/P+R IMD16A SOT-163 15

D16N05 RCA MOS-N-FET-e RFD16N05 TO-251, 252 8

D17 NEC Si-N 2SC1662A-D17 SOT-23 10

D17 NEC Si-N 2SC4180-D17 SOT-323 2 10

D18 NEC Si-N 2SC1662A-D18 SOT-23 10

D18 NEC Si-N 2SC4180-D18 SOT-323 2 10

D1G Samsung Si-P KSA812-G SOT-23 10

D1G Toshiba Si-P HN1A01F-GR SOT-163 15

D1G Toshiba Si-P HN1A01FU-GR SOT-363 2 15

D1L Samsung Si-P KSA812-L SOT-23 10

D1O Samsung Si-P KSA812-O SOT-23 10

D1Y Samsung Si-P KSA812-Y SOT-23 10

D1Y Toshiba Si-P HN1A01FU-Y SOT-363 2 15

D1Y Toshiba Si-P HN1A01F-Y SOT-163 15

D2 Ferranti Si-Di BAW63A SOT-323 2 10

D2 Matsushita Z-Di MAZF056 SOD-323 1,7 19

D2 Matsushita Z-Di MAZN056 SOD-523 1,3 19

D2 Rohm Si-N/P+R IMD2A SOT-163 15

D2 Rohm Si-N/P+R UMD2N SOT-363 2 15

D2 Sanyo Si-N 2SC5277-D2 SC-75 1,6 10

D2 Valvo Si-N BCW32 SOT-23 10 BC548B

D2 Ferranti Si-N BCW32 SOT-23 10 BC548B

D2 Motorola Si-N BCW32 SOT-23 10 BC548B

D2 Philips Si-N BCW32 SOT-23 10 BC548B

D20 Thomson Si-Di SMBYW04-200 SOD-15 8 19

D21 Sanyo N-FET 2SK2219-21 SOT-323 2 10

D21 Sanyo N-FET 2SK931-21 SOT-23 10

D12 … D21

http://www.serwis-elektroniki.com.pl/

Page 74:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

D22 Sanyo N-FET 2SK2219-22 SOT-323 2 10

D22 Sanyo N-FET 2SK931-22 SOT-23 10

D23 Sanyo N-FET 2SK2219-23 SOT-323 2 10

D23 Sanyo N-FET 2SK931-23 SOT-23 10

D24 Sanyo N-FET 2SK931-24 SOT-23 10

D25 NEC Si-N 2SC3115-D25 SOT-23 10

D25 Sanyo N-FET 2SK931-25 SOT-23 10

D26 NEC Si-N 2SC3115-D26 SOT-23 10

D27 NEC Si-N 2SC3115-D27 SOT-23 10

D28 NEC Si-N 2SC3115-D28 SOT-23 10

D28 Thomson Si-Di BAS70W SOT-323 2 10

D29 Thomson Si-Di BAS70-06W SOT-323 2 10

D2C01 Motorola MOS-N/P-FET-e MMDF2C01HD MDIP-8 23

D2C02 Motorola MOS-N/P-FET-e MMDF2C02HD MDIP-8 23

D2C03 Motorola MOS-N/P-FET-e MMDF2C03HD MDIP-8 23

D2E Rohm Si-Di RB491D SOT-23 10

D2P01 Motorola MOS-P-FET-e MMDF2P01HD MDIP-8 23

D2P02 Motorola MOS-P-FET-e MMDF2P02HD MDIP-8 23

D2P03 Motorola MOS-P-FET-e MMDF2P03HD MDIP-8 23

D3 Ferranti Si-Di BAW63B SOT-323 2 10

D3 KEC Si-Di KDS187 SOT-23 10

D3 Rohm Si-N/P+R IMD3A SOT-163 15

D3 Rohm Si-N/P+R UMD3N SOT-363 2 15

D3 Sanyo Si-N 2SC5277-D3 SC-75 1,6 10

D3 Siliconix MOS-N-FET-e SST213 SOT-23 10

D3 Toshiba Si-Di 1SS187 SOT-23 10

D3 Valvo Si-N BCW33 SOT-23 10 BC548C

D3 Ferranti Si-N BCW33 SOT-23 10 BC548C

D3 Philips Si-N BCW33 SOT-23 10 BC548C

D30 Thomson Si-Di BAS70-05W SOT-323 2 10

D31 Thomson Si-Di BAS70-04W SOT-323 2 10

D3A Rohm Si-Di RB400D SOT-23 10

D3B Rohm Si-Di RB420D SOT-23 10

D3C Rohm Si-Di RB421D SOT-23 10

D3E Rohm Si-Di RB411D SOT-23 10

D22 … D3E

http://www.serwis-elektroniki.com.pl/

Page 75:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

D3G Rohm Si-Di RB471E SOT-153 14

D3H Rohm Si-Di RB705D SOT-23 10

D3J Rohm Si-Di RB706D-40 SOT-23 10

D3L Rohm Si-Di RB425D SOT-23 10

D3N02 Motorola MOS-N-FET-e MMDF3N02HD MDIP-8 23

D3N03 Motorola MOS-N-FET-e MMDF3N03HD MDIP-8 23

D3P Rohm Si-Di RB731U SOT-163 15

D3Q Rohm Si-Di RB495D SOT-23 10

D3V Rohm Si-Di RB415D SOT-23 10

D4 AEG C-Di BB404D 10 BB804

D4 Ferranti Si-Di BAW63B SOT-323 2 10

D4 Ferranti Si-N BCW31R SOT-23 10 BC548A

D4 ITT C-Di BB404D 10 BB804

D4 National Si-Di MMBD4148SE SOT-23 10

D4 Sanyo Si-P 2SA1252-4 SOT-23 10

D4 Valvo Si-N BCW31R SOT-23 10 BC548A

D42 NEC Si-N 2SD2228-D42 SOT-323 2 10

D43 NEC Si-N 2SD2228-D43 SOT-323 2 10

D44 NEC Si-N 2SD2228-D44 SOT-323 2 10

D45 NEC Si-N 2SD2228-D45 SOT-323 2 10

D46 Thomson Si-Di BAT46W SOT-323 2 10

D47 Thomson Z-Di BZX84/C3V9 SOT-23 10

D48 Thomson Z-Di BZX84/C4V3 SOT-23 10

D49 Thomson Si-Di BAY84 SOT-23 10

D4N01 Motorola MOS-N-FET-e MMDF4N01HD MDIP-8 23

D4N01Z Motorola MOS-N-FET-e MMDF4N01Z MDIP-8 23

D5 Ferranti Si-Di BAW65 SOT-323 2 10

D5 Ferranti Si-N BCW32R SOT-23 10 BC548B

D5 Motorola Si-N BCW32R SOT-23 10 BC548B

D5 National Si-Di MMBD4148CC SOT-23 10

D5 NEC Si-N 2SC1622-D5 SOT-23 10

D5 Sanyo Si-P 2SA1252-5 SOT-23 10

D5 Siliconix MOS-N-FET-e SST215 SOT-23 10

D5 Thomson Si-Di SMBYW04-50 SOD-15 8 19

D5 Valvo Si-N BCW32R SOT-23 10 BC548B

D3G … D5

http://www.serwis-elektroniki.com.pl/

Page 76:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 67 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

D51 NEC Si-N 2SD780A-D51 SOT-23 10

D52 NEC Si-N 2SD780A-D52 SOT-23 10

D52 Thomson Thy SoBRY55/30 SOT-23 10

D53 NEC Si-N 2SD780A-D53 SOT-23 10

D53 Thomson Si-Di BAY85 SOT-23 10

D54 NEC Si-N 2SD780A-D54 SOT-23 10

D54 Thomson Z-Di BZX84/C3V3 SOT-23 10

D55 NEC Si-N 2SD780A-D55 SOT-23 10

D58 Zetex Si-Di FLLD258 SOT-23 10

D5F Rohm PIN-Di RN739D SOT-23 10

D6 Ferranti Si-Di BAW66 SOT-323 2 10

D6 Ferranti Si-N BCW33R SOT-23 10 BC548C

D6 Motorola Si-N MMBC1622 SOT-23 10 2SC1622

D6 National Si-Di MMBD4148CA SOT-23 10

D6 NEC Si-N 2SC1622-D6 SOT-23 10

D6 Rohm Si-N/P+R IMD6A SOT-163 15

D6 Rohm Si-N/P+R UMD6N SOT-363 2 15

D6 Samsung Si-N MMBC1622 SOT-23 10 2SC1622

D6 Sanyo Si-P 2SA1252-6 SOT-23 10

D6 Valvo Si-N BCW33R SOT-23 10 BC548C

D62 Thomson Si-Di BAT53 SOT-23 10

D63 Zetex Si-Di FLLD263 SOT-23 10

D64 Thomson Z-Di BZX84/C3V6 SOT-23 10

D65 Thomson Thy SoBRY55/30R SOT-23 10

D66 Thomson Thy SoBRY55/60 SOT-23 10

D67 Thomson Thy SoBRY55/60R SOT-23 10

D6E Rohm Z-Di FTZ5.6E SOT-153 14

D6F Rohm Z-Di FTZ6.8E SOT-153 14

D6F Rohm Z-Di UMZ6.8E SOT-353 2 14

D7 Ferranti Si-Di BAW67 SOT-323 2 10

D7 Motorola Si-N MMBC1622 SOT-23 10 2SC1622

D7 NEC Si-N 2SC1662-D7 SOT-23 10

D7 Samsung Si-N MMBC1622 SOT-23 10 2SC1622

D7 Sanyo Si-P 2SA1252-7 SOT-23 10

D7 Philips Si-N BCF32 SOT-23 10 BC549B

D51 … D7

http://www.serwis-elektroniki.com.pl/

Page 77:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 68 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

D71 Valvo Si-N BCW60A SOT-23 10

D72 Valvo Si-N BCW60B SOT-23 10

D73 Thomson PIN-Di BA579A SOT-23 10

D73 Thomson Si-Di BAT54W SOT-323 2 10

D73 Valvo Si-N BCW60C SOT-23 10

D74 Thomson PIN-Di BA579C SOT-23 10

D74 Thomson Si-Di BAT54AW SOT-323 2 10

D74 Valvo Si-N BCW60D SOT-23 10

D75 Thomson PIN-Di BA579S SOT-23 10

D76 Thomson Si-Di BAR18 SOT-23 10

D77 Philips Si-N BCF32R SOT-23 10 BC549B

D77 Thomson Si-Di BAT54CW SOT-323 2 10

D77 Valvo Si-N BCF32R SOT-23 10

D78 Thomson Si-Di BAT54SW SOT-323 2 10

D8 Ferranti Si-Di BAW68 SOT-323 2 10

D8 Motorola Si-N MMBC1622 SOT-23 10 2SC1622

D8 NEC Si-N 2SC1662-D8 SOT-23 10

D8 Philips Si-N BCF33 SOT-23 10 BC549C

D8 Rohm Si-N/P+R IMD8A SOT-163 15

D8 Samsung Si-N MMBC1622 SOT-23 10 2SC1622

D8 Zetex Si-Di ZUMD54 SOT-323 2 10

D81 Philips Si-N BCF33R SOT-23 10 BC549C

D81 Thomson Si-Di BAR43A SOT-23 10

D81 Valvo Si-N BCF33R SOT-23 10

D82 Thomson Si-Di BAR43C SOT-23 10

D83 Siemens Si-Di BB503DK SOT-23 10

D83 Thomson Si-Di BB503DK SOT-23 10

D84 Thomson Si-Di BAT18DK SOT-23 10

D84 Thomson Si-Di BAT54A SOT-23 10

D85 Thomson Si-Di BAT17DS SOT-23 10

D86 Thomson Si-Di BAT54 SOT-23 10

D87 Thomson Si-Di BAT54C SOT-23 10

D88 Thomson Si-Di BAT54S SOT-23 10

D89 Thomson Si-Di BAT74 SOT-143 13

D8C Zetex Si-Di ZUMD54C SOT-323 2 10

D71 … D8C

http://www.serwis-elektroniki.com.pl/

Page 78:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 69 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

D9 Rohm Si-N/P+R IMD9A SOT-163 15

D91 Philips Si-N BCV61 SOT-143 13

D91 Siemens Si-N BCV61 SOT-143 13

D91 Valvo Si-N BCV61 SOT-143 13

D92 Philips Si-N BCV61A SOT-143 13

D92 Siemens Si-N BCV61A SOT-143 13

D92 Valvo Si-N BCV61A SOT-143 13

D93 Philips Si-N BCV61B SOT-143 13

D93 Siemens Si-N BCV61B SOT-143 13

D93 Valvo Si-N BCV61B SOT-143 13

D94 Philips Si-N BCV61C SOT-143 13

D94 Siemens Si-N BCV61C SOT-143 13

D94 Thomson Si-Di BAR42 SOT-23 10

D94 Valvo Si-N BCV61C SOT-143 13

D94 Zetex Si-Di ZUMD70-04 SOT-323 2 10

D95 Philips Si-N BCV63 SOT-143 13

D95 Thomson Si-Di BAR43 SOT-23 10

D95 Zetex Si-Di ZUMD70-05 SOT-323 2 10

D96 Philips Si-N BCV63B SOT-143 13

D96 Thomson Si-Di BAS70-04 SOT-23 10

D97 Thomson Si-Di BAS70-05 SOT-23 10

D98 Thomson Si-Di BAS70-06 SOT-23 10

D99 Thomson Si-Di BAS70-07 SOT-143 13

DA Hitachi Si-N 2SD1418-DA SOT-89 11

DA NEC MOS-N-FET-e µPA502T SOT-153 14

DA Philips Si-N BF622 SOT-89 11 BF422

DA Philips Si-N BF722 SOT-223 16

DA Rohm Si-N 2SD1664 SOT-89 11

DA Sanyo Si-N 2SC4919 SC-75 1,6 10

DA Sanyo Si-N 2SD1618 SOT-89 11

DA SGS Si-P BCW67A SOT-23 10 BCX42

DA Siemens Si-N BF622 SOT-89 11

DA Valvo Si-N BF622 SOT-89 11

DA Zetex C-Di ZMV829 SOD-323 1,7 19

DA Ferranti Si-P BCW67A SOT-23 10

D9 … DA

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

DA Siemens Si-P BCW67A SOT-23 10 BCX42

DA2 Thomson Si-Di SDBAX12 SOT-23 10

DA5 Thomson Si-Di BAR43S SOT-23 10

DA6 Thomson Z-Di BZV53A SOT-23 10

DA7 Thomson Z-Di BZV53B SOT-23 10

DA8 Thomson Z-Di BZV54A SOT-23 10

DA9 Thomson Z-Di BZV54B SOT-23 10

DAP Rohm Si-N 2SD1664-P SOT-89 11

DAQ Rohm Si-N 2SD1664-Q SOT-89 11

DAR Rohm Si-N 2SD1664-R SOT-89 11

DB NEC MOS-N-FET-e µPA572T SOT-353 2 14

DB Philips Si-P BF623 SOT-89 11 BF423

DB Philips Si-P BF723 SOT-223 16

DB Rohm Si-N 2SD1418-DB SOT-89 11

DB Rohm Si-N 2SD1766 SOT-89 11

DB Sanyo Si-N 2SD1619 SOT-89 11

DB SGS Si-P BCW67B SOT-23 10

DB Siemens Si-P BCW76B TO-18 BC640

DB Siemens Si-P BF623 SOT-89 11

DB Valvo Si-P BF623 SOT-89 11

DB Zetex C-Di ZMV830 SOD-323 1,7 19

DB Ferranti Si-P BCW67B SOT-23 10

DB Motorola Si-P BCW67B SOT-23 10

DB Siemens Si-P BCW67B SOT-23 10

DB1 Thomson Si-Di BAR43A SOT-23 10

DB2 Thomson Si-Di BAR43B SOT-23 10

DB6 Thomson Si-Di BAT46AW SOT-323 2 10

DB6 Thomson Si-Di BAY85S SOT-23 10

DBB Thomson Z-Di SMAJ6.0CA DO-214AC 5×2,5 19

DBC Thomson Z-Di SMAJ6.5CA DO-214AC 5×2,5 19

DBH Thomson Z-Di SMAJ8.5CA DO-214AC 5×2,5 19

DBK Thomson Z-Di SMAJ12CA DO-214AC 5×2,5 19

DBP Rohm Si-N 2SD1766-P SOT-89 11

DBQ Rohm Si-N 2SD1766-Q SOT-89 11

DBQ Thomson Z-Di SMAJ18CA DO-214AC 5×2,5 19

DA … DBQ

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Page 80:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 71 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

DBR Rohm Si-N 2SD1766-R SOT-89 11

DBR Thomson Z-Di SMAJ20CA DO-214AC 5×2,5 19

DBS Thomson Z-Di SMAJ22CA DO-214AC 5×2,5 19

DBT Thomson Z-Di SMAJ24CA DO-214AC 5×2,5 19

DBU Thomson Z-Di SMAJ26CA DO-214AC 5×2,5 19

DBZ Thomson Z-Di SMAJ40CA DO-214AC 5×2,5 19

DC Mitsubishi Si-N 2SC3444-C SOT-89 11

DC Philips Si-N BF620 SOT-89 11 BF420

DC Philips Si-N BF720 SOT-223 16

DC Rohm Si-N 2SD1418-DC SOT-89 11

DC Rohm Si-N 2SD1767 SOT-89 11

DC Sanyo Si-N 2SD1620 SOT-89 11

DC SGS Si-P BCW67C SOT-23 10

DC Siemens Si-N BFN20 SOT-89 11 BF620

DC Valvo Si-N BF620 SOT-89 11

DC Zetex C-Di ZMV831 SOD-323 1,7 19

DC Ferranti Si-P BCW67C SOT-23 10

DC Siemens Si-P BCW67C SOT-23 10

DCP Rohm Si-N 2SD1767-P SOT-89 11

DCQ Rohm Si-N 2SD1767-Q SOT-89 11

DCR Rohm Si-N 2SD1767-R SOT-89 11

DD Fagor Z-Di P4SMA-120 DO-214AC 5 19

DD Hitachi Si-N 2SC2463-D SOT-23 10

DD Hitachi Si-N 2SC4933-D SOT-323 2 10

DD Hitachi Si-N 2SD1419-DD SOT-89 11

DD Mitsubishi Si-N 2SC3441-D SOT-23 10

DD Mitsubishi Si-N 2SC3444-D SOT-89 11

DD Sanyo Si-N 2SD1621 SOT-89 11

DD Siemens Si-N BFN16 SOT-89 11 2SC3554

DD Thomson Z-Di SM6T6V8 SOD-6 6×4 19

DD Zetex C-Di ZMV832 SOD-323 1,7 19

DE Fagor Z-Di P4SMA-120A DO-214AC 5 19

DE Hitachi Si-N 2SC2463-E SOT-23 10

DE Hitachi Si-N 2SC4933-E SOT-323 2 10

DE Hitachi Si-N 2SD1419-DE SOT-89 11

DBR … DE

http://www.serwis-elektroniki.com.pl/

Page 81:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 72 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

DE Mitsubishi Si-N 2SC3441-E SOT-23 10

DE Mitsubishi Si-N 2SC3444-E SOT-89 11

DE Rohm Si-P 2SA1037KLN-E SOT-23 10

DE Rohm Si-N-Darl 2SD1834 SOT-89 11

DE Sanyo Si-N 2SD1622 SOT-89 11

DE Siemens Si-N BFN18 SOT-89 11 2SC3554

DE Thomson Z-Di SM6T6V8A SOD-6 6×4 19

DE Zetex C-Di ZMV833 SOD-323 1,7 19

DF Fagor Z-Di P4SMA-130 DO-214AC 5 19

DF Hitachi Si-N 2SC2463-F SOT-23 10

DF Hitachi Si-N 2SC4933-F SOT-323 2 10

DF Mitsubishi Si-N 2SC3441-F SOT-23 10

DF Philips Si-P BF621 SOT-89 11 BF421

DF Philips Si-P BF721 SOT-223 16

DF Rohm Si-N BCX56 SOT-89 11

DF Sanyo Si-N 2SD1623 SOT-89 11

DF SGS Si-P BCW68F SOT-23 10

DF Siemens Si-P BFN21 SOT-89 11 BF621

DF Thomson Z-Di SM6T7V5 SOD-6 6×4 19

DF Valvo Si-P BF621 SOT-89 11

DF Zetex C-Di ZMV834 SOD-323 1,7 19

DF Ferranti Si-P BCW68F SOT-23 10

DF Siemens Si-P BCW68F SOT-23 10

DFP Rohm Si-N 2SD1898-P SOT-89 11

DFQ Rohm Si-N 2SD1898-Q SOT-89 11

DFR Rohm Si-N 2SD1898-R SOT-89 11

DG Fagor Z-Di P4SMA-130A DO-214AC 5 19

DG KEC Si-N KTC4077-GR SOT-323 2 10

DG Rohm Si-N-Darl RXTA-14 SOT-89 11

DG Sanyo Si-N 2SD1624 SOT-89 11

DG SGS Si-P BCW68G SOT-23 10

DG Siemens Si-P BFN17 SOT-89 11

DG Thomson Z-Di SM6T7V5A SOD-6 6×4 19

DG Toshiba Si-N 2SC2713-GR SOT-23 10

DG Toshiba Si-N 2SC4117-GR SOT-323 2 10

DE … DG

http://www.serwis-elektroniki.com.pl/

Page 82:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

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Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

DG Zetex C-Di ZMV835 SOD-323 1,7 19

DG Ferranti Si-P BCW68G SOT-23 10

DG Siemens Si-P BCW68G SOT-23 10

DGQ Rohm Si-N 2SD1963-Q SOT-89 11

DGR Rohm Si-N 2SD1963-R SOT-89 11

DGS Rohm Si-N 2SD1963-S SOT-89 11

DH Fagor Z-Di P4SMA-150 DO-214AC 5 19

DH Hitachi Si-P 2SB1025-DH SOT-89 11

DH Rohm Si-N-Darl RXTA-28 SOT-89 11

DH Sanyo Si-N 2SD1625 SOT-89 11

DH SGS Si-P BCW68H SOT-23 10

DH Siemens Si-P BFN19 SOT-89 11

DH Ferranti Si-P BCW68H SOT-23 10

DH Siemens Si-P BCW68H SOT-23 10

DI Matsushita Si-N+R XN421L SOT-163 15

DI Sanyo Si-N 2SD1626 SOT-89 11

DI- Hitachi Si-N 2SC3867 SOT-23 10

DJ Hitachi Si-P 2SB1025-DJ SOT-89 11

DJ Sanyo Si-N 2SD1627 SOT-89 11

DJ4 Sanyo N-FET 3SK180-4 SOT-143 13

DJ5 Sanyo N-FET 3SK180-5 SOT-143 13

DJ6 Sanyo N-FET 3SK180-6 SOT-143 13

DJQ Rohm Si-N 2SD2098-Q SOT-89 11

DJR Rohm Si-N 2SD2098-R SOT-89 11

DJS Rohm Si-N 2SD2098-S SOT-89 11

DK Hitachi Si-P 2SB1025-DK SOT-89 11

DK NEC Si-P 2SB798-DK SOT-89 11

DK Sanyo Si-N 2SD1628 SOT-89 11

DK Sanyo MOS-N-FET-e* 2SK2909 SOT-23 10

DK Siemens Si-P BCX42 SOT-23 10

DK Thomson Si-P BCX42 SOT-23 10

DKP Rohm Si-N 2SC4672-P SOT-89 11

DKQ Rohm Si-N 2SC4672-Q SOT-89 11

DL Fagor Z-Di P4SMA-150A DO-214AC 5 19

DL Hitachi Si-P 2SB1026-DL SOT-89 11

DG … DL

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Page 83:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

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Case

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Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

DL KEC Si-N KTC4077-BL SOT-323 2 10

DL NEC Si-P 2SB798-DL SOT-89 11

DL Sanyo Si-P 2SA1343 SOT-23 10

DL Sanyo Si-N 2SD2099 SOT-89 11

DL Toshiba Si-N 2SC2713-BL SOT-23 10

DL Toshiba Si-N 2SC4117-BL SOT-323 2 10

DLN Rohm Si-N 2SD2167-N SOT-89 11

DLP Rohm Si-N 2SD2167-P SOT-89 11

DLQ Rohm Si-N 2SD2167-Q SOT-89 11

DM Fagor Z-Di P4SMA-160 DO-214AC 5 19

DM Hitachi Si-P 2SB1026-DM SOT-89 11

DM NEC Si-P 2SB798-DM SOT-89 11

DM Rohm Si-N-Darl P2SD2170 SOT-89 11

DM Sanyo Si-N 2SD1998 SOT-89 11

DN Fagor Z-Di P4SMA-160A DO-214AC 5 19

DN Sanyo Si-N 2SD1999 SOT-89 11

DN Thomson Z-Di SM6T10 SOD-6 6×4 19

DNE Rohm Si-N 2SD2153-E SOT-89 11

DNU Rohm Si-N 2SD2153-U SOT-89 11

DNV Rohm Si-N 2SD2153-V SOT-89 11

DNW Rohm Si-N 2SD2153-W SOT-89 11

DO KEC Si-P KTA1661-O SOT-89 11

DO Sanyo Si-N 2SD1997 SOT-89 11

DO Toshiba Si-P 2SA1201-O SOT-89 11

DO Toshiba Si-P 2SA1620-O SOT-23 10

DO Toshiba Si-N 2SC5092-O SOT-143 13

DP Fagor Z-Di P4SMA-170 DO-214AC 5 19

DP Matsushita Si-P 2SB789-P SOT-89 11

DP NEC Si-P HQ1L2N SOT-89 11

DP Rohm Si-N-Darl 2SD2195 SOT-89 11

DP Sanyo Si-N 2SD2100 SOT-89 11

DP Thomson Z-Di SM6T10A SOD-6 6×4 19

DQ Fagor Z-Di P4SMA-170A DO-214AC 5 19

DQ Matsushita Si-P 2SB1219A-Q SOT-323 2 10

DQ Matsushita Si-P 2SB710A-Q SOT-23 10

DL … DQ

http://www.serwis-elektroniki.com.pl/

Page 84:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

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Device

Opis

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Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

DQ Matsushita Si-P 2SB789-Q SOT-89 11

DQ NEC Si-P HQ1A3M SOT-89 11

DQ Philips Si-P 2PB1219AQ SOT-323 2 10

DQ Philips Si-P 2PB710AQ SOT-23 10

DQ Sanyo Si-N-Darl+Di 2SD2176 SOT-89 11

DQN Rohm Si-N 2SD2211-N SOT-89 11

DQP Rohm Si-N 2SD2211-P SOT-89 11

DQQ Rohm Si-N 2SD2211-Q SOT-89 11

DR Fagor Z-Di P4SMA-180 DO-214AC 5 19

DR Hitachi Si-N 2SC4643 SOT-89 11

DR Matsushita Si-P 2SB1219A-R SOT-323 2 10

DR Matsushita Si-P 2SB710A-R SOT-23 10

DR Matsushita Si-P 2SB789-R SOT-89 11

DR NEC Si-P HQ1F3M SOT-89 11

DR Philips Si-P 2PB1219AR SOT-323 2 10

DR Philips Si-P 2PB710AR SOT-23 10

DR Rohm Si-P 2SA1037KLN-R SOT-23 10

DR Rohm Si-N-Darl 2SD2212 SOT-89 11

DR Toshiba Si-N 2SC5092-R SOT-143 13

DS Fagor Z-Di P4SMA-180A DO-214AC 5 19

DS Hitachi Si-N 2SD1946 SOT-89 11

DS Matsushita Si-P 2SB1219A-S SOT-323 2 10

DS Matsushita Si-P 2SB710A-S SOT-23 10

DS Matsushita Si-P 2SB789-S SOT-89 11

DS Matsushita GaAs-FET-IC GN1051 SOT-163 15

DS NEC Si-P HQ1F3P SOT-89 11

DS Philips Si-P 2PB1219AS SOT-323 2 10

DS Philips Si-P 2PB710AS SOT-23 10

DS Rohm Si-P 2SA1037KLN-S SOT-23 10

DS Sanyo Si-P 2SA1728 SOT-23 10

DS Siemens Si-P BCX42R SOT-23 10

DS Thomson Si-P BCX42R SOT-23 10

DT Fagor Z-Di P4SMA-200 DO-214AC 5 19

DT Hitachi Si-N-Darl 2SD1471-DT SOT-89 11

DT Matsushita Si-N XN6A554 SOT-163 15

DQ … DT

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Page 85:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

D

DT NEC Si-P HQ1L2Q SOT-89 11

DT Sanyo Si-N 2SC4112 SOT-23 10

DT SGS Si-P BCW67RA SOT-23 10

DT Siemens Si-P BCW67RA SOT-23 10

Dt2 Philips Si-N/P PUMD2 SOT-363 15

Dt3 Philips Si-N/P PUMD3 SOT-363 15

DT5111 Thomson Z-Di, Z-IC THDT51-11 MDIP-8 23

DT5112 Thomson Z-Di, Z-IC THDT51-12 DIP-8 21

DT6511 Thomson Z-Di, Z-IC THDT65-11 MDIP-8 23

DT6512 Thomson Z-Di, Z-IC THDT65-12 DIP-8 21

DTP Rohm Si-N 2SD2391-P SOT-89 11

DtQ Philips Si-P 2PB1219AQ SC-70 2 10

DTQ Rohm Si-N 2SD2391-Q SOT-89 11

DtR Philips Si-P 2PB1219AR SC-70 2 10

DtS Philips Si-P 2PB1219AS SC-70 2 10

DU Fagor Z-Di P4SMA-200A DO-214AC 5 19

DU Matsushita GaAs-N-FET-d 3SK241 SOT-143 13

DU Matsushita GaAs-N-FET-d 3SK272 SOT-343 2 13

DU Matsushita Si-N/P+R XP03311 SOT-353 2 14

DU NEC Si-P HQ1F2Q SOT-89 11

DU SGS Si-P BCW67RB SOT-23 10

DU Siemens Si-P BCW67RB SOT-23 10

DUB Thomson Z-Di SMAJ6.0A DO-214AC 5×2,5 19

DUC Thomson Z-Di SMAJ6.5A DO-214AC 5×2,5 19

DUH Thomson Z-Di SMAJ8.5A DO-214AC 5×2,5 19

DUK Thomson Z-Di SMAJ12A DO-214AC 5×2,5 19

DUQ Thomson Z-Di SMAJ18A DO-214AC 5×2,5 19

DUR Thomson Z-Di SMAJ20A DO-214AC 5×2,5 19

DUS Thomson Z-Di SMAJ22A DO-214AC 5×2,5 19

DUT Thomson Z-Di SMAJ24A DO-214AC 5×2,5 19

DUU Thomson Z-Di SMAJ26A DO-214AC 5×2,5 19

DUZ Thomson Z-Di SMAJ40A DO-214AC 5×2,5 19

DV Fagor Z-Di P4SMA-220 DO-214AC 5 19

DV Matsushita Si-N 2SC4755 SOT-323 2 10

DV Matsushita Si-N 2SC4782 SOT-23 10

DT … DV

http://www.serwis-elektroniki.com.pl/

Page 86:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

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Odpowiednik

D

DV Matsushita Si-N/P+R XP03383 SOT-353 2 14

DV1 NEC Si-N 2SD596-DV1 SOT-23 10

DV2 NEC Si-N 2SD596-DV2 SOT-23 10

DV3 NEC Si-N 2SD596-DV3 SOT-23 10

DV4 NEC Si-N 2SD596-DV4 SOT-23 10

DV5 NEC Si-N 2SD596-DV5 SOT-23 10

DVP Matsushita Si-N 2SC4755-P SOT-323 2 10

DVP Matsushita Si-N 2SC4782-P SOT-23 10

DVQ Matsushita Si-N 2SC4755-Q SOT-323 2 10

DVQ Matsushita Si-N 2SC4782-Q SOT-23 10

DVR Matsushita Si-N 2SC4755-R SOT-323 2 10

DVR Matsushita Si-N 2SC4782-R SOT-23 10

DVV Rohm Si-N 2SD2537-V SOT-89 11

DVW Rohm Si-N 2SD2537-W SOT-89 11

DW SGS Si-P BCW67RC SOT-23 10

DW Siemens Si-P BCW67RC SOT-23 10

DW Thomson Z-Di SM6T15 SOD-6 6×4 19

DW1 NEC Si-N 2SD780-DW1 SOT-23 10

DW2 NEC Si-N 2SD780-DW2 SOT-23 10

DW3 NEC Si-N 2SD780-DW3 SOT-23 10

DW4 NEC Si-N 2SD780-DW4 SOT-23 10

DW5 NEC Si-N 2SD780-DW5 SOT-23 10

DX Fagor Z-Di P4SMA-220A DO-214AC 5 19

DX NEC Si-P HQ1A4A SOT-89 11

DX SGS Si-P BCW68RF SOT-23 10

DX Siemens Si-P BCW68RF SOT-23 10

DX Thomson Z-Di SM6T15A SOD-6 6×4 19

DY Hitachi MOS-N-FET-e* 2SK1579 SOT-89 11

DY KEC Si-P KTA1661-Y SOT-89 11

DY Sanyo Si-N 2SC3397 SOT-23 10

DY SGS Si-P BCW68RG SOT-23 10

DY Siemens Si-P BCW68RG SOT-23 10

DY Toshiba Si-P 2SA1201-Y SOT-89 11

DY Toshiba Si-P 2SA1620-Y SOT-23 10

DZ Matsushita Si-N XN4505 SOT-163 15

DV … DZ

http://www.serwis-elektroniki.com.pl/

Page 87:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

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Obudowa

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Fig.

Rys.

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Odpowiednik

E

DZ SGS Si-P BCW68RH SOT-23 10

DZ Siemens Si-P BCW68RH SOT-23 10

E

E Hitachi C-Di HVU17 SOD-323 1,7 19

E Matsushita Si-P 2SA1022 SOT-23 10

E Matsushita Si-P 2SA1532 SOT-323 2 10

E Matsushita Si-P 2SA1790 SC-75 1,6 10

E Matsushita Si-P 2SB789A SOT-89 11

E Rohm Diode 1SS380 SOD-323 1,7 19

E Sanyo Si-P 2SA1688 SOT-23 10

E Siemens Si-Di BAT66 SOT-223 16

E Siemens C-Di BB689 (SCD-80) 1,3 19

E01 Rohm Si-N+R DTDG14GP SOT-89 11

E02 Rohm Si-N+R DTDG23YP SOT-89 11

E1 AEG Si-N BFS17 SOT-23 10

E1 AEG Si-N BFS17W SOT-323 2 10

E1 Europa Si-N BFS17 SOT-23 10 BFW92

E1 Hitachi Si-Di HRB0103A SOT-323 2 10

E1 Matsushita Si-P 2SA1737 SOT-89 11

E1 Matsushita Z-Di MAZF062 SOD-323 1,7 19

E1 Matsushita Z-Di MAZN062 SOD-523 1,3 19

E1 Motorola Si-N BFS17 SOT-23 10

E1 Philips Si-N BFS17W SOT-323 2 10

E1 Philips Si-N BFS17 SOT-23 10

E15 Philips Si-P BF747 SOT-23 10

E16 Philips Si-N BF547W: SOT-323 2 10

E16 Thomson Si-Di STPS160U DO-214AA 5×3,5 19

E1H Zetex Si-N BFS17H SOT-23 10

E1L Zetex Si-N BFS17L SOT-23 10

E2 AEG Si-N BFS17A SOT-23 10

E2 Europa Si-N BFS17A SOT-23 10 BFW92A

E2 Ferranti Si-Di BAL99 SOT-23 10

E2 Hitachi Si-Di HRB0103B SOT-323 2 10

E2 Matsushita Z-Di MAZF068 SOD-323 1,7 19

DZ … E2

http://www.serwis-elektroniki.com.pl/

Page 88:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

E

E2 Matsushita Z-Di MAZN068 SOD-523 1,3 19

E2 Rohm Z-Di EDZ6.2B SC-79 1,3 19

E2 Rohm Z-Di UDZ6.2B SOD-323 1,7 19

E2 Rohm Z-Di UDZS6.2B SOD-323 1,7 19

E2 Sanyo Si-P 2SA1226-2 SOT-23 10

E2 Philips Si-N BFS17A SOT-23 10

E21 Sanyo N-FET 2SK932-21 SOT-23 10

E22 Sanyo N-FET 2SK932-22 SOT-23 10

E23 Sanyo N-FET 2SK932-23 SOT-23 10

E24 Sanyo N-FET 2SK932-24 SOT-23 10

E3 Ferranti Si-Di BAR99 SOT-23 10

E3 KEC Si-Di KDS190 SOT-23 10

E3 Sanyo Si-P 2SA1226-3 SOT-23 10

E3 Sanyo Si-P 2SA1256-3 SOT-23 10

E3 Toshiba Si-Di 1SS190 SOT-23 10

E4 AEG C-Di BB404E 10 BB804

E4 AEG Si-N BFS17R SOT-23 10

E4 Europa Si-N BFS17R SOT-23 10

E4 ITT C-Di BB404E 10 BB804

E4 Sanyo Si-P 2SA1226-4 SOT-23 10

E4 Sanyo Si-P 2SA1256-4 SOT-23 10

E4 Valvo Si-N BFS17R SOT-23 10

E5 AEG Si-N BFS17AR SOT-23 10

E5 Europa Si-N BFS17AR SOT-23 10

E5 Rohm Z-Di UDZ33B SOD-323 1,7 19

E5 Sanyo Si-P 2SA1256-5 SOT-23 10

E5 Valvo Si-N BFS17AR SOT-23 10

E6 Ferranti Si-Di ZC2800E SOT-23 10

E7 Ferranti Si-Di ZC2810E SOT-23 10

E8 Ferranti Si-Di ZC2811E SOT-23 10

E9 Ferranti Si-Di ZC5800E SOT-23 10

EA Hitachi Si-N 2SD1420-EA SOT-89 11

EA Matsushita Si-P 2SA1022-A SOT-23 10

EA Matsushita Si-P 2SA1532-A SOT-323 2 10

EA Matsushita Si-P 2SA1790-A SS Mini 1,6 10

E2 … EA

http://www.serwis-elektroniki.com.pl/

Page 89:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 80 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

E

EA NEC Si-P/N µPA504T SOT-153 14

EA NEC Si-P/N µPA574T SOT-353 2 14

EA NEC Si-N HC2A4A SOT-89 11

EA Sanyo Si-N 2SC4920 SC-75 1,6 10

EA Sanyo Si-N 2SC5415 SOT-89 11

EA SGS Si-N BCW65A SOT-23 10 2SD1782

EA Ferranti Si-N BCW65A SOT-23 10

EA Siemens Si-N BCW65A SOT-23 10 2SD1782

EAE Sanyo Si-N 2SC415-E SOT-89 11

EAF Sanyo Si-N 2SC415-F SOT-89 11

EB Hitachi Si-N 2SD1420-EB SOT-89 11

EB Matsushita Si-P 2SA1022-B SOT-23 10

EB Matsushita Si-P 2SA1532-B SOT-323 2 10

EB Matsushita Si-P 2SA1790-B SS Mini 1,6 10

EB Matsushita Si-P 2SA1888-B (T Mini) ~10

EB Matsushita N-FET 2SK1842 SOT-23 10

EB Matsushita N-FET 2SK2380 SC-75 1,6 10

EB Sanyo Si-N 2SC5551 SOT-89 11

EB SGS Si-N BCW65B SOT-23 10 2SD1782

EB Ferranti Si-N BCW65B SOT-23 10

EB Motorola Si-N BCW65B SOT-23 10

EB Siemens Si-N BCW65B SOT-23 10 2SD1782

EBA Thomson Z-Di SMAJ43CA DO-214AC 5×2,5 19

EBE Sanyo Si-N 2SC5551-E SOT-89 11

EBF Sanyo Si-N 2SC5551-F SOT-89 11

EBF Thomson Z-Di SMAJ58CA DO-214AC 5×2,5 19

EBI Thomson Z-Di SMAJ70CA DO-214AC 5×2,5 19

EBL Thomson Z-Di SMAJ85CA DO-214AC 5×2,5 19

EBN Thomson Z-Di SMAJ100CA DO-214AC 5×2,5 19

EBP Samsung N-FET 2SK1842-P: SOT-23 10

EBQ Matsushita N-FET 2SK2380-Q: SS Mini 1,6 10

EBQ Samsung N-FET 2SK1842-Q: SOT-23 10

EBQ Thomson Z-Di SMAJ130CA DO-214AC 5×2,5 19

EBR Matsushita N-FET 2SK2380-R: SS Mini 1,6 10

EBR Samsung N-FET 2SK1842-R: SOT-23 10

EA … EBR

http://www.serwis-elektroniki.com.pl/

Page 90:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 81 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

E

EBS Matsushita N-FET 2SK2380-S: SS Mini 1,6 10

EBS Samsung N-FET 2SK1842-S: SOT-23 10

EBT Thomson Z-Di SMAJ154CA DO-214AC 5×2,5 19

EBV Thomson Z-Di SMAJ188CA DO-214AC 5×2,5 19

EC Hitachi Si-N 2SC2732 SOT-23 10

EC Hitachi Si-N 2SC4462 SOT-323 2 10

EC Hitachi Si-N 2SD1420-EC SOT-89 11

EC Matsushita Si-P 2SA1022-C SOT-23 10

EC Matsushita Si-P 2SA1532-C SOT-323 2 10

EC Matsushita Si-P 2SA1790-C SS Mini 1,6 10

EC Matsushita Si-P 2SA1888-C (T Mini) ~10

EC Matsushita MOS-N-FET-d 3SK247 SOT-143 13

EC Mitsubishi Si-P 2SA1368-C SOT-89 11

EC SGS Si-N BCW65C SOT-23 10 2SD1782

EC Ferranti Si-N BCW65C SOT-23 10

EC Motorola Si-N BCW65C SOT-23 10

EC Siemens Si-N BCW65C SOT-23 10 2SD1782

ED Fagor Z-Di Z1SMA-7V5 DO-214AC 5 19

ED Hitachi Si-N 2SD1421-ED SOT-89 11

ED Matsushita Si-N/P XP4654 SOT-363 2 15

ED Mitsubishi Si-P 2SA1368-D SOT-89 11

ED Philips Si-P-Darl BCV28 SOT-89 11 2SB1048

ED Siemens Si-P-Darl BCV28 SOT-89 11 2SB1048

ED Thomson Z-Di SM6T18 SOD-6 6×4 19

EE Fagor Z-Di Z1SMA-6V8 DO-214AC 5 19

EE Hitachi Si-N 2SD1421-EE SOT-89 11

EE Mitsubishi Si-P 2SA1368-E SOT-89 11

EE Philips Si-P-Darl BCV48 SOT-89 11 2SB1125

EE Siemens Si-P-Darl BCV48 SOT-89 11 2SB1125

EE Thomson Z-Di SM6T18A SOD-6 6×4 19

EF Fagor Z-Di Z1SMA-8V2 DO-214AC 5 19

EF Philips Si-N-Darl BCV29 SOT-89 11 2SD1470

EF SGS Si-N BCW66F SOT-23 10 2SD1782

EF Siemens Si-N BCV29 SOT-89 11 2SD1470

EF Ferranti Si-N BCW66F SOT-23 10

EBS … EF

http://www.serwis-elektroniki.com.pl/

Page 91:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 82 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

E

EF Siemens Si-N BCW66F SOT-23 10 2SD1782

EG Fagor Z-Di Z1SMA-9V1 DO-214AC 5 19

EG Philips Si-N-Darl BCV49 SOT-89 11 2SD1625

EG SGS Si-N BCW66G SOT-23 10 2SD1782

EG Siemens Si-N-Darl BCV49 SOT-89 11 2SD1625

EG Siemens Si-N BCW66G SOT-23 10 2SD1782

EG Ferranti Si-N BCW66G SOT-23 10

EG Siemens Si-N BCW66G SOT-23 10

EH Fagor Z-Di Z1SMA-10 DO-214AC 5 19

EH Hitachi Si-P 2SB1027-EH SOT-89 11

EH SGS Si-N BCW66H SOT-23 10 2SD1782

EH Thomson Z-Di SM6T22 SOD-6 6×4 19

EH Ferranti Si-N BCW66H SOT-23 10

EH Siemens Si-N BCW66H SOT-23 10 2SD1782

EI Matsushita Si-P+R UN211M SOT-23 10

EI Matsushita Si-P+R UN511M SOT-323 2 10

EI- Hitachi MOS-N-FET-d 3SK182 SOT-143 13

EJ Hitachi Si-P 2SB1027-EJ SOT-89 11

EJ4 Sanyo N-FET 3SK181-4 SOT-143 13

EJ5 Sanyo N-FET 3SK181-5 SOT-143 13

EJ6 Sanyo N-FET 3SK181-6 SOT-143 13

EK Fagor Z-Di Z1SMA-11 DO-214AC 5 19

EK Hitachi Si-P 2SB1027-EK SOT-89 11

EK Matsushita Si-P+R XN111M SOT-153 14

EK Matsushita Si-P+R XP0111M SOT-353 2 14

EK NEC Si-N 2SD1001-EK SOT-89 11

EK Thomson Z-Di SM6T22A SOD-6 6×4 19

EK Siemens Si-N BCX41 SOT-23 10

EK Thomson Si-N BCX41 SOT-23 10

EL Fagor Z-Di Z1SMA-12 DO-214AC 5 19

EL Hitachi Si-P 2SB1028-EL SOT-89 11

EL Matsushita Si-N+R UN221M SOT-23 10

EL Matsushita Si-N+R UN521M SOT-323 2 10

EL Matsushita Si-N+R UNR921M SC-75 1,6 10

EL NEC Si-N 2SD1001-EL SOT-89 11

EF … EL

http://www.serwis-elektroniki.com.pl/

Page 92:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

E

EL Sanyo Si-P 2SA1344 SOT-23 10

EL Sanyo Si-P 2SA1678 SOT-323 2 10

EL Thomson Z-Di SM6T24 SOD-6 6×4 19

EM Fagor Z-Di Z1SMA-13 DO-214AC 5 19

EM Hitachi Si-P 2SB1028-EM SOT-89 11

EM Matsushita Si-N+R XN121M SOT-153 14

EM NEC Si-N 2SD1001-EM SOT-89 11

EM Sanyo MOS-P-FET-e* 2SJ501 SOT-23 10

EM Thomson Z-Di SM6T24A SOD-6 6×4 19

EN Fagor Z-Di Z1SMA-15 DO-214AC 5 19

EN Matsushita Si-N XN4506 SOT-163 15

EN Matsushita Si-N XP4506 SOT-363 2 15

EN Sanyo Si-N 2SC4860 SOT-323 2 10

EN Sanyo Si-N 2SC4861 SOT-23 10

EN Sanyo Si-N 2SC4862 SOT-143 13

EN Thomson Z-Di SM6T27 SOD-6 6×4 19

EN3 Sanyo Si-N 2SC4860-3 SOT-323 2 10

EN3 Sanyo Si-N 2SC4861-3 SOT-23 10

EN3 Sanyo Si-N 2SC4862-3 SOT-143 13

EN4 Sanyo Si-N 2SC4860-4 SOT-323 2 10

EN4 Sanyo Si-N 2SC4861-4 SOT-23 10

EN4 Sanyo Si-N 2SC4862-4 SOT-143 13

EN5 Sanyo Si-N 2SC4860-5 SOT-323 2 10

EN5 Sanyo Si-N 2SC4861-5 SOT-23 10

EN5 Sanyo Si-N 2SC4862-5 SOT-143 13

EO KEC Si-N KTC3265-O SOT-23 10

EO KEC Si-N KTC4374-O SOT-89 11

EO Matsushita Si-N XP5555 SOT-363 2 15

EO Toshiba Si-N 2SC2882-O SOT-89 11

EO Toshiba Si-N 2SC3265-O SOT-23 10

EO Toshiba Si-N 2SC5097-O SOT-143 13

EP Fagor Z-Di Z1SMA-16 DO-214AC 5 19

EP Matsushita Si-P 2SB789A-P SOT-89 11

EP Matsushita Si-N XN4556 SOT-163 15

EP Thomson Z-Di SM6T27A SOD-6 6×4 19

EL … EP

http://www.serwis-elektroniki.com.pl/

Page 93:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 84 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

E

EQ Fagor Z-Di Z1SMA-18 DO-214AC 5 19

EQ Matsushita Si-P 2SB789A-Q SOT-89 11

EQ Matsushita N-FET XP1D874 SOT-353 2 14

EQ Thomson Z-Di SM6T30 SOD-6 6×4 19

ER Fagor Z-Di Z1SMA-20 DO-214AC 5 19

ER Hitachi Si-N 2SC4807 SOT-89 11

ER Matsushita Si-P 2SB789A-R SOT-89 11

ER Matsushita Si-N/P XN4683 SOT-163 15

ER Matsushita Si-N/P XP4683 SOT-363 2 15

ER Thomson Z-Di SM6T30A SOD-6 6×4 19

ER Toshiba Si-N 2SC5097-R SOT-143 13

ES Fagor Z-Di Z1SMA22 DO-214AC 5 19

ES Hitachi Si-N+Di 2SD1974 SOT-89 11

ES Matsushita Si-P 2SB789A-S SOT-89 11

ES Sanyo Si-P 2SA1745 SOT-323 2 10

ES Sanyo Si-P 2SA1753 SOT-23 10

ES Siemens Si-N BCX41R SOT-23 10

ES Thomson Si-N BCX41R SOT-23 10

ES Thomson Z-Di SM6T33 SOD-6 6×4 19

ET Fagor Z-Di Z1SMA-24 DO-214AC 5 19

ET Hitachi Si-N-Darl 2SD1471-ET SOT-89 11

ET Matsushita GaAs-N-FET-d 3SK273 SOT-143 13

ET Sanyo Si-N 2SC4120 SOT-23 10

ET SGS Si-N BCW65AR SOT-23 10 2SD1782

ET Siemens Si-N BCW65RA SOT-23 10 2SD1782

ET Thomson Z-Di SM6T33A SOD-6 6×4 19

ETP Matsushita GaAs-N-FET-d 3SK273-P SOT-143 13

ETQ Matsushita GaAs-N-FET-d 3SK273-Q SOT-143 13

ETR Matsushita GaAs-N-FET-d 3SK273-R SOT-143 13

ETS Matsushita GaAs-N-FET-d 3SK273-S SOT-143 13

EU Fagor Z-Di Z1SMA-27 DO-214AC 5 19

EU Matsushita Si-N XP1554 SOT-353 2 14

EU SGS Si-N BCW65BR SOT-23 10 2SD1782

EU Siemens Si-N BCW65RB SOT-23 10 2SD1782

EU Thomson Z-Di SM6T36 SOD-6 6×4 19

EQ … EU

http://www.serwis-elektroniki.com.pl/

Page 94:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 85 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

E

EUA Thomson Z-Di SMAJ43A DO-214AC 5×2,5 19

EUF Thomson Z-Di SMAJ58A DO-214AC 5×2,5 19

EUI Thomson Z-Di SMAJ70A DO-214AC 5×2,5 19

EUL Thomson Z-Di SMAJ85A DO-214AC 5×2,5 19

EUN Thomson Z-Di SMAJ100A DO-214AC 5×2,5 19

EUQ Thomson Z-Di SMAJ130A DO-214AC 5×2,5 19

EUT Thomson Z-Di SMAJ154A DO-214AC 5×2,5 19

EUV Thomson Z-Di SMAJ188A DO-214AC 5×2,5 19

EV Fagor Z-Di Z1SMA-30 DO-214AC 5 19

EV Matsushita Si-P+R UN2154 SOT-23 10

EV Sanyo PIN-Di 1SV241 SOT-153 14

EV Thomson Z-Di SM6T36A SOD-6 6×4 19

EW Fagor Z-Di Z1SMA-33 DO-214AC 5 19

EW Matsushita Si-P+R UN211N SOT-23 10

EW SGS Si-N BCW65CR SOT-23 10 2SD1782

EW Siemens Si-N BCW65RC SOT-23 10 2SD1782

EW Thomson Z-Di SM6T39 SOD-6 6×4 19

EX Fagor Z-Di Z1SMA-36 DO-214AC 5 19

EX Matsushita Si-N+R UN221N SOT-23 10

EX Matsushita Si-N+R UNR921N SC-75 1,6 10

EX NEC Si-N 2SD2402-EX SOT-89 11

EX SGS Si-N BCW66RF SOT-23 10 2SD1782

EX Siemens Si-N BCW66RF SOT-23 10 2SD1782

EX Thomson Z-Di SM6T39A SOD-6 6×4 19

EY Fagor Z-Di Z1SMA-39 DO-214AC 5 19

EY Hitachi MOS-N-FET-e* 2SK1697 SOT-89 11

EY KEC Si-N KTC3265-Y SOT-23 10

EY KEC Si-N KTC4374-Y SOT-89 11

EY Matsushita Si-P+R UN211T SOT-23 10

EY NEC Si-N 2SD2402-EY SOT-89 11

EY Sanyo Si-N 2SC3398 SOT-23 10

EY Sanyo Si-N 2SC4398 SOT-323 2 10

EY SGS Si-N BCW66GR SOT-23 10 2SD1782

EY Siemens Si-N BCW66RG SOT-23 10 2SD1782

EY Toshiba Si-N 2SC2882-Y SOT-89 11

EUA … EY

http://www.serwis-elektroniki.com.pl/

Page 95:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

EY Toshiba Si-N 2SC3265-Y SOT-23 10

EZ Fagor Z-Di Z1SMA-43 DO-214AC 5 19

EZ Matsushita Si-N+R UN221T SOT-23 10

EZ Matsushita Si-N XP05543 SOT-363 2 15

EZ NEC Si-N 2SD2402-EZ SOT-89 11

EZ SGS Si-N BCW66HR SOT-23 10 2SD1782

EZ Siemens Si-N BCW66RH SOT-23 10 2SD1782

F

F Hitachi C-Di HVU352 SOD-323 1,7 19

F Matsushita Si-P 2SA1034 SOT-23 10

F Matsushita Si-P 2SA1531 SOT-323 2 10

F Matsushita Si-Di MA2S331 SOD-523 1,3 19

F Matsushita Z-Di MAZF075 SOD-323 1,7 19

F Matsushita Z-Di MAZN075 SOD-523 1,3 19

F Matsushita Z-Di MAZS033 SOD-523 1,3 19

F Sanyo Si-N 2SC4399 SOT-323 2 10

F02 Thomson N-FET SO4091 SOT-23 10

F03 Thomson N-FET SO4391 SOT-23 10

F05 AEG Si-N TSDF1205 SOT-143 13

F07 Thomson N-FET SO4392 SOT-23 10

F08 Thomson N-FET SO4393 SOT-23 10

F09 Thomson N-FET SO3966 SOT-23 10

F1 Europa Si-N BFS18 SOT-23 10 BF495

F1 Fagor Si-Di FRS1A DO-214AC 5 19

F1 Motorola Si-N 2SC1009-F1 SOT-23 10

F1 NEC Si-N 2SC1009-F1 SOT-23 10

F1 Samsung Si-N KST1009F1 SOT-23 10

F1 Philips Si-N BFS18 SOT-23 10

F1 Thomson Si-N BFS18 SOT-23 10

F10 Thomson N-FET SO4092 SOT-23 10

F10PH Philips Z-Di BZX79-F10 DO-35 9

F11 Thomson N-FET SO4093 SOT-23 10

F11PH Philips Z-Di BZX79-F11 DO-35 9

F12 NEC Si-N 2SC2223-F12 SOT-23 10

EY … F12

http://www.serwis-elektroniki.com.pl/

Page 96:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

F12 NEC Si-N 2SC4178-F12 SOT-323 2 10

F12 Thomson N-FET SO245B SOT-23 10

F12PH Philips Z-Di BZX79-F12 DO-35 9

F13 NEC Si-N 2SC2223-F13 SOT-23 10

F13 NEC Si-N 2SC4178-F13 SOT-323 2 10

F13 Thomson N-FET BFR30R SOT-23 10

F13PH Philips Z-Di BZX79-F13 DO-35 9

F14 NEC Si-N 2SC2223-F14 SOT-23 10

F14 NEC Si-N 2SC4178-F14 SOT-323 2 10

F14 Thomson N-FET BFR31R SOT-23 10

F14N05 RCA MOS-N-FET-e RFD14N05 TO-251, 252 8

F14N06 RCA MOS-N-FET-e RFD14N06 TO-251, 252 8

F15 Thomson N-FET SO5432 SOT-23 10

F15P05 RCA MOS-P-FET-e RFD15P05 TO-251, 252 8

F15P06 RCA MOS-P-FET-e RFD15P06 TO-251, 252 8

F15PH Philips Z-Di BZX79-F15 DO-35 9

F16 Origin Si-Di F1F16 SOT-323 1,7 19

F16 Origin Si-Di SM-1XF16 (2,8×2,3) 9

F16 Thomson N-FET SO5432R SOT-23 10

F16N05 RCA MOS-N-FET-e RFD16N05 TO-251, 252 8

F16N06 RCA MOS-N-FET-e RFD16N06 TO-251, 252 8

F16PH Philips Z-Di BZX79-F16 DO-35 9

F17 Thomson N-FET SO5433 SOT-23 10

F18 Thomson N-FET SO5433R SOT-23 10

F18N10CS RCA MOS-N-FET-e RFB18N10CS TO-220/5 5 pin 4

F18PH Philips Z-Di BZX79-F18 DO-35 9

F19 Thomson N-FET SO5434 SOT-23 10

F1N05 Motorola MOS-N-FET-e MMDF1N05E MDIP-8 23

F1O Samsung Si-P KSA1182-O SOT-23 10

F1S0506 RCA MOS-P-FET-e RF1S0506 TO-263 8

F1S0P05 RCA MOS-P-FET-e RF1S0P05 TO-263 8

F1S25N06 RCA MOS-N-FET-e RF1S25N06 TO-263 8

F1S45N06 RCA MOS-N-FET-e RF1S45N06 TO-263 8

F1S50N06 RCA MOS-N-FET-e RF1S50N06 TO-263 8

F1S60P03 RCA MOS-N-FET-e RF1S60P03 TO-263 8

F12 … F1S60P03

http://www.serwis-elektroniki.com.pl/

Page 97:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 88 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

F1S70N03 RCA MOS-N-FET-e RF1S70N03 TO-263 8

F1S70N06 RCA MOS-N-FET-e RF1S70N06 TO-263 8

F1Y Samsung Si-P KSA1182-Y SOT-23 10

F2 Europa Si-N BFS19 SOT-23 10

F2 Fagor Si-Di FRS1B DO-214AC 5 19

F2 Motorola Si-N 2SC1009-F2 SOT-23 10

F2 NEC Si-N 2SC1009-F2 SOT-23 10

F2 Rohm Z-Di EDZ6.8B SC-79 1,3 19

F2 Rohm Z-Di UDZ6.8B SOD-323 1,7 19

F2 Rohm Z-Di UDZS6.8B SOD-323 1,7 19

F2 Samsung Si-N KST1009F2 SOT-23 10

F2 Sanyo Si-N 2SC2814-F2 SOT-23 10

F2 Philips Si-N BFS19 SOT-23 10

F2 Thomson Si-N BFS19 SOT-23 10

F20 AEG Si-N TSDF1220 SOT-143 13

F20 Origin Si-Di SM-1XF20 (2,8×2,3) 9

F20 Thomson N-FET SO245BR SOT-23 10

F20PH Philips Z-Di BZX79-F20 DO-35 9

F21 Thomson N-FET SO245A SOT-23 10

F22 Thomson N-FET SO4091R SOT-23 10

F22PH Philips Z-Di BZX79-F22 DO-35 9

F23 Thomson N-FET SO4391R SOT-23 10

F23N06LE RCA MOS-N-FET-e RF1S23N06LE TO-263 8

F24 Thomson N-FET SO245AR SOT-23 10

F24PH Philips Z-Di BZX79-F24 DO-35 9

F25 Thomson N-FET SO245C SOT-23 10

F26 Thomson N-FET SO245CR SOT-23 10

F27 Thomson N-FET SO4392R SOT-23 10

F27PH Philips Z-Di BZX79-F27 DO-35 9

F28 Thomson N-FET SO4393R SOT-23 10

F29 Thomson N-FET SO3966R SOT-23 10

F2C02E Motorola MOS-N/P-FET-e MMDF2C02E MDIP-8 23

F2N02E Motorola MOS-N-FET-e MMDF2N02E MDIP-8 23

F2P02E Motorola MOS-N-FET-e MMDF2P02E MDIP-8 23

F2V4PH Philips Z-Di BZX79-F2V4 DO-35 9

F1S70N03 … F2V4PH

http://www.serwis-elektroniki.com.pl/

Page 98:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

F2V7PH Philips Z-Di BZX79-F2V7 DO-35 9

F3 Fagor Si-Di FRS1D DO-214AC 5 19

F3 KEC Si-Di KDS193 SOT-23 10

F3 Motorola Si-N 2SC1009-F3 SOT-23 10

F3 NEC Si-N 2SC1009-F3 SOT-23 10

F3 Philips Si-N BF840 SOT-23 10 BF340

F3 Samsung Si-N KST1009F3 SOT-23 10

F3 Sanyo Si-N 2SC2814-F3 SOT-23 10

F3 Siemens Si-N BF840 SOT-23 10 BF340

F3 Toshiba Si-Di 1SS193 SOT-23 10

F3 Valvo Si-N BF840 SOT-23 10

F30 Thomson N-FET SO4092R SOT-23 10

F3055LE RCA MOS-N-FET-e RFD3055LE TO-251, 252 8

F30N06LE RCA MOS-N-FET-e RFP30N06LE TO-220 4

F30PH Philips Z-Di BZX79-F30 DO-35 9

F31 Philips Si-N BF841 SOT-23 10 BF241

F31 Siemens Si-N BF841 SOT-23 10 BF241

F31 Thomson N-FET SO4093R SOT-23 10

F31 Valvo Si-N BF841 SOT-23 10

F32 Thomson N-FET SO5434R SOT-23 10

F33PH Philips Z-Di BZX79-F33 DO-35 9

F36PH Philips Z-Di BZX79-F36 DO-35 9

F39PH Philips Z-Di BZX79-F39 DO-35 9

F3N08L RCA MOS-N-FET-e RFD3N08L TO-251, 252 8

F3T Philips Si-Di 1PS193 SOT-23 10

F3V0PH Philips Z-Di BZX79-F3V0 DO-35 9

F3V3PH Philips Z-Di BZX79-F3V3 DO-35 9

F3V6PH Philips Z-Di BZX79-F3V6 DO-35 9

F3V9PH Philips Z-Di BZX79-F3V9 DO-35 9

F4 Fagor Si-Di FRS1G DO-214AC 5 19

F4 Motorola Si-N 2SC1009-F4 SOT-23 10

F4 NEC Si-N 2SC1009-F4 SOT-23 10

F4 Samsung Si-N KST1009F4 SOT-23 10

F4 Sanyo Si-N 2SC2814-F4 SOT-23 10

F4 Thomson Si-N BFS18R SOT-23 10

F2V7PH … F4

http://www.serwis-elektroniki.com.pl/

Page 99:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 90 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

F4 Valvo Si-N BFS18R SOT-23 10

F40N10LE RCA MOS-N-FET-e RF1S40N10LE TO-263 8

F43PH Philips Z-Di BZX79-F43 DO-35 9

F45N03L RCA MOS-N-FET-e RF1S45N03L TO-263 8

F47PH Philips Z-Di BZX79-F47 DO-35 9

F4V3PH Philips Z-Di BZX79-F4V3 DO-35 9

F4V7PH Philips Z-Di BZX79-F4V7 DO-35 9

F5 AEG Si-N BFS19R SOT-23 10

F5 Europa Si-N BFS19R SOT-23 10

F5 Fagor Si-Di FRS1J DO-214AC 5 19

F5 Motorola Si-N 2SC1009-F5 SOT-23 10

F5 NEC Si-N 2SC1009-F5 SOT-23 10

F5 Rohm Z-Di UDZ36B SOD-323 1,7 19

F5 Samsung Si-N KST1009F5 SOT-23 10

F5 Sanyo Si-N 2SC2814-F5 SOT-23 10

F5 Thomson Si-N BFS19R SOT-23 10

F5 Toshiba Si-Di 1SS250 SOT-23 10

F5 Toshiba Si-Di 1SS370 SOT-323 2 10

F5 Valvo Si-N BFS19R SOT-23 10

F50 AEG Si-N TSDF1250 SOT-143 13

F51PH Philips Z-Di BZX79-F51 DO-35 9

F56PH Philips Z-Di BZX79-F56 DO-35 9

F5V1PH Philips Z-Di BZX79-F5V1 DO-35 9

F5V6PH Philips Z-Di BZX79-F5V6 DO-35 9

F6 Fagor Si-Di FRS1K DO-214AC 5 19

F6 Motorola Si-N BFQ19S SOT-89 11 2SC3607

F6 NEC Si-N 2SC2223-F6 SOT-23 10

F6 Philips Si-N BFQ19S SOT-89 11 2SC3607

F6 Siemens Si-N BFQ19S SOT-89 11 2SC3607

F62PH Philips Z-Di BZX79-F62 DO-35 9

F68PH Philips Z-Di BZX79-F68 DO-35 9

F6V2PH Philips Z-Di BZX79-F6V2 DO-35 9

F6V8PH Philips Z-Di BZX79-F6V8 DO-35 9

F7 Fagor Si-Di FRS1M DO-214AC 5 19

F7 Hitachi Si-Di HSB83J SOT-323 2 10

F4 … F7

http://www.serwis-elektroniki.com.pl/

Page 100:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 91 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

F7 Hitachi Si-Di HSM83 SOT-23 10

F75PH Philips Z-Di BZX79-F75 DO-35 9

F7V5PH Philips Z-Di BZX79-F7V5 DO-35 9

F8 AEG Si-N BF824 SOT-23 10 BF324

F8 Hitachi Si-Di HSM122 SOT-23 10

F8 Origin Si-Di SM-1XF08 (2,8×2,3) 9

F8 Philips Si-P BF824 SOT-23 10 BF324

F8t Philips Si-P BF824W SOT-323 2 10

F8V2PH Philips Z-Di BZX79-F8V2 DO-35 9

F9 Toshiba Si-Di 1SS321 SOT-23 10

F9V1PH Philips Z-Di BZX79-F9V1 DO-35 9

FA Hitachi Si-N 2SC2619-A SOT-23 10

FA Motorola Si-N BFQ17 SOT-89 11 BFW16A

FA NEC MOS-P/N-FET-e µPA505T SOT-153 14

FA NEC Si-P HQ2A4A SOT-89 11

FA Philips Si-N BFQ17 SOT-89 11 BFW16A

FA Sanyo Si-N 2SC4921 SC-75 1,6 10

FA Sanyo Si-N 2SC5564 SOT-89 11

FA Siemens Si-N BFQ17 SOT-89 11 BFW16A

FA Siemens Si-N BSV65A SOT-23 10

FA Valvo Si-N BFQ17 SOT-89 11

FA AEG Si-N BFP81 SOT-143 13

FA Siemens Si-N BFP81 SOT-143 13

FA3 NEC Si-N 2SC4179-FA3 SOT-323 2 10

FA4 NEC Si-N 2SC4179-FA4 SOT-323 10

FB Hitachi Si-N 2SC2619-B SOT-23 10

FB Matsushita Si-N 2SC5016 (T Mini) ~10

FB Matsushita Si-P 2SC5216 SOT-23 10

FB Mitsubishi Si-N 2SC3053-B SOT-23 10

FB Mitsubishi Si-N 2SC4258-B SOT-323 2 10

FB Motorola Si-N BFQ19 SOT-89 11 BFR96

FB Philips Si-N BFQ19 SOT-89 11 BFR96

FB Sanyo Si-N 2SC5565 SOT-89 11

FB Siemens Si-N BFP17 SOT-143 13

FB Siemens Si-N BFQ19 SOT-89 11 BFR96

F7 … FB

http://www.serwis-elektroniki.com.pl/

Page 101:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 92 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

FB Siemens Si-N BSV65B SOT-23 10

FB Valvo Si-N BFQ19 SOT-89 11

FBA Thomson Z-Di SMCJ5.0CA SOD-15 8×5 19

FBB Thomson Z-Di SMCJ6.0CA SOD-15 8×5 19

FBC Thomson Z-Di SMCJ6.5CA SOD-15 8×5 19

FBD Thomson Z-Di SMCJ5.5CA SOD-15 8×5 19

FBF Thomson Z-Di SMCJ10CA SOD-15 8×5 19

FBH Thomson Z-Di SMCJ12CA SOD-15 8×5 19

FBI Thomson Z-Di SMCJ13CA SOD-15 8×5 19

FBJ Thomson Z-Di SMCJ15CA SOD-15 8×5 19

FBL Thomson Z-Di SMCJ18CA SOD-15 8×5 19

FBM Thomson Z-Di SMCJ20CA SOD-15 8×5 19

FBN Thomson Z-Di SMCJ22CA SOD-15 8×5 19

FBO Thomson Z-Di SMCJ24CA SOD-15 8×5 19

FBP Thomson Z-Di SMCJ26CA SOD-15 8×5 19

FBQ Thomson Z-Di SMCJ28CA SOD-15 8×5 19

FBR Thomson Z-Di SMCJ30CA SOD-15 8×5 19

FBS Thomson Z-Di SMCJ33CA SOD-15 8×5 19

FBU Thomson Z-Di SMCJ40CA SOD-15 8×5 19

FBW Thomson Z-Di SMCJ48CA SOD-15 8×5 19

FBZ Thomson Z-Di SMCJ58CA SOD-15 8×5 19

FC Hitachi Si-N 2SC2619-C SOT-23 10

FC Matsushita Si-P+R UN211V SOT-23 10

FC Mitsubishi Si-N 2SC3053-C SOT-23 10

FC Mitsubishi Si-N 2SC3438-C SOT-89 11

FC Mitsubishi Si-N 2SC4258-C SOT-323 2 10

FC Siemens Si-N BFP29 SOT-143 13 BFG93A

FC Siemens Si-N BFQ64 SOT-89 11

FD Fagor Z-Di Z1SMA-47 DO-214AC 5 19

FD Matsushita Si-N+R UN221V SOT-23 10

FD Mitsubishi Si-N 2SC3053-D SOT-23 10

FD Mitsubishi Si-N 2SC3438-D SOT-89 11

FD Mitsubishi Si-N 2SC4258-D SOT-323 2 10

FD Motorola Si-N BFQ17P SOT-89 11

FD Philips Si-P-Darl BCV26 SOT-23 10 BCV46

FB … FD

http://www.serwis-elektroniki.com.pl/

Page 102:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 93 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

FD Philips Si-N BFQ17P SOT-89 11

FD Sanyo Si-N 2SC5567 SOT-89 11

FD SGS Si-P-Darl BCV26 SOT-23 10 BCV46

FD Siemens Si-P BCV26 SOT-23 10 BCV46

FD Siemens Si-N BFP35A SOT-143 13 BFG93A

FD Siemens Si-N BFQ17P SOT-89 11

FE Matsushita Si-P+R UN211Z SOT-23 10

FE Mitsubishi Si-N 2SC3438-E SOT-89 11

FE Motorola Si-N BFQ19P SOT-89 11 2SC3607

FE Philips Si-N BFQ19P SOT-89 11 2SC3607

FE Sanyo Si-N 2SC5568 SOT-89 11

FE Siemens Si-N BFQ19P SOT-89 11 2SC3607

FE AEG Si-N BFP93A SOT-143 13

FE Siemens Si-N BFP93A SOT-143 13

FE Philips Si-P-Darl BCV46 SOT-23 10

FE Siemens Si-P-Darl BCV46 SOT-23 10

FE Thomson Si-P BCV46 SOT-23 10

FF Fagor Z-Di Z1SMA-51 DO-214AC 5 19

FF Matsushita Si-N+R UN221Z SOT-23 10

FF Motorola Si-N BFQ18A SOT-89 11 BFQ34

FF Philips Si-N BFQ18A SOT-89 11 BFQ34

FF SGS Si-N-Darl BCV27 SOT-23 10 BCV47

FF Siemens Si-N BFQ18A SOT-89 11 BFQ34

FF Valvo Si-N BFQ18A SOT-89 11

FF Philips Si-N-Darl BCV27 SOT-23 10 BCV47

FF Siemens Si-N BCV27 SOT-23 10 BCV47

FF Thomson Si-N BCV27 SOT-23 10

FG Fagor Z-Di Z1SMA-56 DO-214AC 5 19

FG Motorola Si-N BFQ19S SOT-89 11 BFQ193

FG Philips Si-N BFQ149 SOT-89 11

FG Philips Si-N BFQ19S SOT-89 11 BFQ193

FG Siemens Si-N BFQ19S SOT-89 11 BFQ193

FG Philips Si-N-Darl BCV47 SOT-23 10

FG Siemens Si-N-Darl BCV47 SOT-23 10

FG40N10L RCA MOS-N-FET-e RFG40N10 TO-247 3

FD … FG40N10L

http://www.serwis-elektroniki.com.pl/

Page 103:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 94 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

FH Fagor Z-Di Z1SMA-62 DO-214AC 5 19

FH Siemens Si-N BFN24 SOT-23 10 2SC4061

FHP Matsushita Si-N 2SC5020-P SOT-323 2 10

FHQ Matsushita Si-N 2SC5020-Q SOT-323 2 10

FHR Matsushita Si-N 2SC5020-R SOT-323 2 10

FI Matsushita Si-N/P+R XN431L SOT-163 15

FI- Hitachi MOS-N-FET-d 3SK186 SOT-143 13

FI- Hitachi MOS-N-FET-d 3SK217 SOT-143 13

FJ Sanyo N-FET 2SK1069 SOT-323 2 10

FJ Siemens Si-N BFN26 SOT-23 10 2SC4061

FJ3 Sanyo N-FET 2SK771-3 SOT-23 10

FJ4 Sanyo N-FET 2SK771-4 SOT-23 10

FJ5 Sanyo N-FET 2SK771-5 SOT-23 10

FK Fagor Z-Di Z1SMA-68 DO-214AC 5 19

FK Matsushita Si-N+R XN421N SOT-163 15

FK NEC Si-P 2SB800-FK SOT-89 11

FK Siemens Si-P BFN25 SOT-23 10 2SA1721

FL Fagor Z-Di Z1SMA-75 DO-214AC 5 19

FL NEC Si-P 2SB800-FL SOT-89 11

FL Sanyo Si-P 2SA1434 SOT-23 10

FL Siemens Si-P BFN27 SOT-23 10 2SA1721

FM AEG Si-Di BB804 SOT-23 10

FM Fagor Z-Di Z1SMA-82 DO-214AC 5 19

FM Matsushita GaAs-FET-IC GN2012 SOT-353 2 14

FM NEC Si-P 2SB800-FM SOT-89 11

FM Siemens Si-Di BB804 SOT-23 10

FN Fagor Z-Di Z1SMA-91 DO-214AC 5 19

FN Sanyo Si-N 2SC4863 SOT-323 2 10

FN Sanyo Si-N 2SC4864 SOT-23 10

FN Sanyo Si-N 2SC4865 SOT-143 13

FN3 Sanyo Si-N 2SC4863-3 SOT-323 2 10

FN3 Sanyo Si-N 2SC4864-3 SOT-23 10

FN3 Sanyo Si-N 2SC4865-3 SOT-143 13

FN4 Sanyo Si-N 2SC4863-4 SOT-323 2 10

FN4 Sanyo Si-N 2SC4864-4 SOT-23 10

FH … FN4

http://www.serwis-elektroniki.com.pl/

Page 104:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

FN4 Sanyo Si-N 2SC4865-4 SOT-143 13

FN5 Sanyo Si-N 2SC4863-5 SOT-323 2 10

FN5 Sanyo Si-N 2SC4864-5 SOT-23 10

FN5 Sanyo Si-N 2SC4865-5 SOT-143 13

FO KEC Si-P KTA1662-O SOT-89 11

FO KEC Si-N KTC3878-O SOT-23 10

FO Matsushita Si-N XP5A554 SOT-363 2 15

FO Toshiba Si-P 2SA1202-O SOT-89 11

FO Toshiba Si-N 2SC2716-O SOT-23 10

FOI Thomson N-FET SO4416 SOT-23 10

FP Fagor Z-Di Z1SMA-100 DO-214AC 5 19

FP Thomson Z-Di SM6T68 SOD-6 6×4 19

FP14N05L RCA MOS-N-FET-e RFP14N05L TO-220 4

FP14N06L RCA MOS-N-FET-e RFP14N06L TO-220 4

FP23N06L RCA MOS-N-FET-e RFP23N06LE TO-220 4

FP3055LE RCA MOS-N-FET-e RFP3055LE TO-220 4

FP40N10L RCA MOS-N-FET-e RFP40N10LE TO-220 4

FP45N03L RCA MOS-N-FET-e RFP45N03L TO-220 4

FQ Fagor Z-Di Z1SMA-110 DO-214AC 5 19

FQ Matsushita Si-P 2SB1610 (T Mini) ~10

FQ Matsushita Si-P 2SB1618 SOT-323 2 10

FQ Philips Si-P 2PA1576Q SOT-323 2 10

FQ Rohm Si-P 2SA1037-FQ (MMT) ~10

FQ Rohm Si-P 2SA1037K-Q SOT-23 10

FQ Rohm Si-P 2SA1576-Q SOT-323 2 10

FQ Rohm Si-P 2SA1774-FQ SS Mini 1,6 10

FQ Thomson Z-Di SM6T68A SOD-6 6×4 19

FR Fagor Z-Di Z1SMA-120 DO-214AC 5 19

FR Hitachi Si-N 2SC4988 SOT-89 11

FR KEC Si-N KTC3878-R SOT-23 10

FR Matsushita Si-P 2SA1034-R SOT-23 10

FR Matsushita Si-P 2SA1531-R SOT-323 2 10

FR Matsushita Si-N 2SD2472 (T Mini) ~10

FR Matsushita Si-N 2SD2482 SOT-323 2 10

FR Philips Si-P 2PA1576R SOT-323 2 10

FN4 … FR

http://www.serwis-elektroniki.com.pl/

Page 105:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

FR Rohm Si-P 2SA1037-FR (MMT) ~10

FR Rohm Si-P 2SA1037K-R SOT-23 10

FR Rohm Si-P 2SA1576-R SOT-323 2 10

FR Rohm Si-P 2SA1774-FR SS Mini 1,6 10

FR Toshiba Si-N 2SC2716-R SOT-23 10

FR1L Toshiba Si-Di TFR1L DO-41 9

FR1N Toshiba Si-Di TFR1N DO-41 9

FR1Q Toshiba Si-Di TFR1Q DO-41 9

FR1T Toshiba Si-Di TFR1T DO-41 9

FR2L Toshiba Si-Di TFR2L DO-41 9

FR2N Toshiba Si-Di TFR2N DO-41 9

FR2Q Toshiba Si-Di TFR2Q DO-41 9

FR2T Toshiba Si-Di TFR2T DO-41 9

FR3L Toshiba Si-Di TFR3L DO-41 9

FR3N Toshiba Si-Di TFR3N DO-41 9

FR3Q Toshiba Si-Di TFR3Q DO-41 9

FR3T Toshiba Si-Di TFR3T DO-41 9

FR4L Toshiba Si-Di TFR4L DO-41 3 9

FR4N Toshiba Si-Di TFR4N DO-41 3 9

FR4Q Toshiba Si-Di TFR4Q DO-41 3 9

FR4T Toshiba Si-Di TFR4T DO-41 3 9

FS Fagor Z-Di Z1SMA-130 DO-214AC 5 19

FS Hitachi Si-P 2SB1519 SOT-89 11

FS Matsushita Si-P 2SA1034-S SOT-23 10

FS Matsushita Si-P 2SA1531-S SOT-323 2 10

FS Matsushita Si-P 2SB1611 (T Mini) ~10

FS Matsushita Si-P 2SB1619 SOT-323 2 10

FS Philips Si-P 2PA1576S SOT-323 2 10

FS Rohm Si-P 2SA1037-FS (MMT) ~10

FS Rohm Si-P 2SA1037K-S SOT-23 10

FS Rohm Si-P 2SA1576-S SOT-323 2 10

FS Rohm Si-P 2SA1774-FS SS Mini 1,6 10

FS Sanyo Si-P 2SA1763 SOT-323 2 10

FS Sanyo Si-P 2SA1764 SOT-23 10

FT Fagor Z-Di Z1SMA-150 DO-214AC 5 19

FR … FT

http://www.serwis-elektroniki.com.pl/

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

F

FT Matsushita Si-P 2SA1034-T SOT-23 10

FT Matsushita Si-P 2SA1531-T SOT-323 2 10

FT Matsushita Si-N 2SD2473 (T Mini) ~10

FT Matsushita Si-N 2SD2483 SOT-323 2 10

FT Sanyo Si-N 2SC4146 SOT-23 10

FtF Philips Si-P PUMT1 SOT-363 15

FtQ Philips Si-P 2PA1576Q SC-70 2 10

FtR Philips Si-P 2PA1576R SC-70 2 10

FtS Philips Si-P 2PA1576S SC-70 2 10

FtZ Philips Si-N/P PUMZ1 SOT-363 15

FU Fagor Z-Di Z1SMA-160 DO-214AC 5 19

FUA Thomson Z-Di SMCJ5.0A SOD-15 8×5 19

FUB Thomson Z-Di SMCJ6.0A SOD-15 8×5 19

FUC Thomson Z-Di SMCJ6.5A SOD-15 8×5 19

FUD Thomson Z-Di SMCJ8.5A SOD-15 8×5 19

FUF Thomson Z-Di SMCJ10A SOD-15 8×5 19

FUH Thomson Z-Di SMCJ12A SOD-15 8×5 19

FUI Thomson Z-Di SMCJ13A SOD-15 8×5 19

FUJ Thomson Z-Di SMCJ15A SOD-15 8×5 19

FUL Thomson Z-Di SMCJ18A SOD-15 8×5 19

FUM Thomson Z-Di SMCJ20A SOD-15 8×5 19

FUN Thomson Z-Di SMCJ22A SOD-15 8×5 19

FUO Thomson Z-Di SMCJ24A SOD-15 8×5 19

FUP Thomson Z-Di SMCJ26A SOD-15 8×5 19

FUQ Thomson Z-Di SMCJ28A SOD-15 8×5 19

FUR Thomson Z-Di SMCJ30A SOD-15 8×5 19

FUS Thomson Z-Di SMCJ33A SOD-15 8×5 19

FUU Thomson Z-Di SMCJ40A SOD-15 8×5 19

FUW Thomson Z-Di SMCJ48A SOD-15 8×5 19

FUZ Thomson Z-Di SMCJ58A SOD-15 8×5 19

FV Fagor Z-Di Z1SMA-180 DO-214AC 5 19

FV Matsushita GaAs-FET-IC GN1025 SOT-163 15

FV Sanyo PIN-Di 1SV248 SOT-323 2 10

FV Sanyo PIN-Di 1SV250 SOT-23 10

FW Fagor Z-Di Z1SMA-200 DO-214AC 5 19

FT … FW

http://www.serwis-elektroniki.com.pl/

Page 107:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

G

FX NEC Si-P 2SB1571-FX SOT-89 11

FX Thomson Z-Di SM6T100 SOD-6 6×4 19

FY Hitachi MOS-N-FET-e* 2SK1698 SOT-89 11

FY KEC Si-P KTA1662-Y SOT-89 11

FY KEC Si-N KTC3878-Y SOT-23 10

FY NEC Si-P 2SB1571-FY SOT-89 11

FY Sanyo Si-N 2SC3661 SOT-23 10

FY Siemens Si-N BSV65RA SOT-23 10

FY Thomson Z-Di SM6T100A SOD-6 6×4 19

FY Toshiba Si-P 2SA1202-Y SOT-89 11

FY Toshiba Si-N 2SC2761-Y SOT-23 10

FZ NEC Si-P 2SB1571-FZ SOT-89 11

FZ Siemens Si-N BSV65RB SOT-23 10

G

G Matsushita Z-Di MAZF082 SOD-323 1,7 19

G Matsushita Z-Di MAZN082 SOD-523 1,3 19

G Siemens PIN-Di BAR63-02W (SCD-80) 1,3 19

G Siemens PIN-Di BAR63-03W SOD-323 1,7 19

G Toshiba Si-Di S5566G DO-41 9

G1 Europa Si-N BFS20 SOT-23 10 BF199

G1 Fagor Si-Di FRS2A DO-214AA 5 19

G1 General Si-N D70Y1.5T1 SOT-89 11

G1 Motorola Si-N MMBT5551 SOT-23 10

G1 Philips Si-N PMST5551 SOT-323 2 10 2N5551

G1 Rohm Si-N+R FMG1A SOT-153 14

G1 Rohm Si-N+R UMG1N SOT-353 2 14

G1 Ferranti Si-N BFS20 SOT-23 10

G1 Philips Si-N BFS20 SOT-23 10

G1 Thomson Si-N BFS20 SOT-23 10

G10 Rohm Si-N+R FMG10A SOT-153 14

G10 Rohm Si-N+R UMG10N SOT-353 2 14

G11 NEC MOS-N-FET-e 2SK1133 SOT-23 10

G11 Rohm Si-N+R FMG11A SOT-153 14

G11 Rohm Si-N+R UMG11N SOT-353 2 14

FX … G11

http://www.serwis-elektroniki.com.pl/

Page 108:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

G

G11 Thomson Si-Di STPS1H100U DO-214AA 5×3,5 19

G12 NEC MOS-N-FET-e 2SK1399 SOT-23 10

G12 Rohm Si-N+R FMG12A SOT-153 14

G13 NEC MOS-N-FET-e* 2SK1580 SOT-323 2 10

G13 Rohm Si-N+R FMG13A SOT-153 14

G14 NEC MOS-N-FET-e* 2SK1581 SOT-23 10

G15 NEC MOS-N-FET-e* 2SK1582 SOT-23 10

G16 NEC MOS-N-FET-e* 2SK1590 SOT-23 10

G17 NEC MOS-N-FET-e* 2SK1589 SOT-23 10

G18 NEC MOS-N-FET-e* 2SK1591 SOT-23 10

G19 NEC MOS-N-FET-e* 2SK1657 SOT-23 10

G1F Rohm Si-N BC847B SOT-23 10

G1K Rohm Si-N BC848B SOT-23 10

G1K Rohm Si-N BC848BW SOT-323 2 10

G1L Rohm Si-N BC848C SOT-23 10

G2 AEG Si-P BF550 SOT-23 10 BF450

G2 Fagor Si-Di FRS2B DO-214AA 5 19

G2 KEC Si-N BF599 SOT-23 10

G2 Philips Si-P BF550 SOT-23 10 BF450

G2 Rohm Si-N+R FMG2A SOT-153 14

G2 Rohm Si-N+R UMG2N SOT-353 2 14

G2 Siemens Si-P BF550 SOT-23 10 BF450

G2 Siemens GaAs-FET-IC CGY50 SOT-143 13

G2 Valvo Si-P BF550 SOT-23 10

G20 NEC MOS-N-FET-e* 2SK1658 SOT-323 2 10

G21 NEC MOS-N-FET-e* 2SK1958 SOT-323 2 10

G22 NEC MOS-N-FET-e* 2SK2090 SOT-323 2 10

G23 NEC MOS-N-FET-e* 2SK2158 SOT-23 10

G23 Thomson Si-Di STPS1L30A DO-214AC 5×2,5 19

G23 Thomson Si-Di STPS2L25U DO-214AA 5×3,5 19

G24 NEC MOS-N-FET-e* 2SK2858 SOT-323 2 10

G25 NEC MOS-N-FET-e* 2SK3054 SOT-323 2 10

G3 Fagor Si-Di FRS2D DO-214AA 5 19

G3 KEC Si-Di KDS196 SOT-23 10

G3 National Si-P BF536 SOT-23 10 BF936

G11 … G3

http://www.serwis-elektroniki.com.pl/

Page 109:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

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Dim.

Wymiary

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Rys.

Equivalence

Odpowiednik

G

G3 NEC Si-N 2SC2107-G3 SOT-23 10

G3 Philips Si-P BF536 SOT-23 10 BF936

G3 Rohm Si-N+R FMG3A SOT-153 14

G3 Rohm Si-N+R UMG3N SOT-353 2 14

G3 Sanyo Si-P 2SA1257-3 SOT-23 10

G3 Siemens PIN-Di BAR63 SOT-23 10

G3 Toshiba Si-Di 1SS196 SOT-23 10

G3 Valvo Si-P BF536 SOT-23 10

G30 Thomson Si-Di STPS2L30A DO-214AC 5×2,5 19

G3F Rohm Si-P BC857B SOT-23 10

G3K Rohm Si-P BC858B SOT-23 10

G3K Rohm Si-P BC858BW SOT-323 2 10

G4 AEG Si-N BFS20R SOT-23 10

G4 Europa Si-N BFS20B SOT-23 10

G4 Fagor Si-Di FRS2G DO-214AA 5 19

G4 Ferranti Si-N BFS20R SOT-23 10

G4 NEC Si-N 2SC2107-G4 SOT-23 10

G4 Rohm Si-N+R FMG4A SOT-153 14

G4 Rohm Si-N+R UMG4N SOT-353 2 14

G4 Sanyo Si-P 2SA1257-4 SOT-23 10

G4 Siemens PIN-Di BAR63-04 SOT-23 10

G4 Siemens Si-N BFS20R SOT-23 10

G4s Siemens PIN-Di BAR63-04W SOT-323 2 10

G5 AEG Si-P BF550R SOT-23 10 BF450

G5 Fagor Si-Di FRS2J DO-214AA 5 19

G5 NEC Si-N 2SC2107-G5 SOT-23 10

G5 Philips Si-P BF550R SOT-23 10 BF450

G5 Rohm Si-N+R FMG5A SOT-153 14

G5 Rohm Si-N+R UMG5N SOT-353 2 14

G5 Sanyo Si-P 2SA1257-5 SOT-23 10

G5 Siemens PIN-Di BAR63-05 SOT-23 10

G5 Siemens Si-P BF550R SOT-23 10 BF450

G5 Valvo Si-P BF550R SOT-23 10

G5s Siemens PIN-Di BAR63-05W SOT-323 2 10

G6 AEG Si-P BF569 SOT-23 10 BF970

G3 … G6

http://www.serwis-elektroniki.com.pl/

Page 110:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

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Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

G

G6 Fagor Si-Di FRS2K DO-214AA 5 19

G6 NEC Si-N 2SC2107-G6 SOT-23 10

G6 Philips Si-P BF569 SOT-23 10 BF970

G6 Rohm Si-N+R FMG6A SOT-153 14

G6 Rohm Si-N+R UMG6N SOT-353 2 14

G6 Siemens PIN-Di BAR63-06 SOT-23 10

G6 Siemens Si-P BF569 SOT-23 10 BF970

G6 Valvo Si-P BF569 SOT-23 10

G61 AEG Si-P BF569R SOT-23 10 BF970

G61 Ferranti Si-P BF569R SOT-23 10

G61 Philips Si-P BF569R SOT-23 10 BF970

G61 Siemens Si-P BF569R SOT-23 10 BF970

G6s Siemens PIN-Di BAR63-06W SOT-323 2 10

G7 AEG Si-P BF579 SOT-23 10 BF979

G7 Fagor Si-Di FRS2M DO-214AA 5 19

G7 Philips Si-P BF579 SOT-23 10 BF979

G7 Rohm Si-N+R FMG7A SOT-153 14

G7 Rohm Si-N+R UMG7N SOT-353 2 14

G7 Siemens Si-P BF579 SOT-23 10 BF979

G7 Valvo Si-P BF579 SOT-23 10

G8 Philips Si-P BF660 SOT-23 10 BF606A

G8 Rohm Si-N+R FMG8A SOT-153 14

G8 Rohm Si-N+R UMG8N SOT-353 2 14

G8 Valvo Si-P BF660 SOT-23 10

G81 Philips Si-P BF660R SOT-23 10 BF606A

G81 Valvo Si-P BF660R SOT-23 10

G9 Philips Si-P BF767 SOT-23 10 BF967

G9 Rohm Si-N+R FMG9A SOT-153 14

G9 Rohm Si-N+R UMG9N SOT-353 2 14

G9 Siemens Si-P BF767 SOT-23 10 BF967

G9 Valvo Si-P BF767 SOT-23 10

GA AEG Si-P S416T SOT-23 10

GA Hitachi Si-N 2SD1463-GA SOT-89 11

GA NEC Si-N µPA600T SOT-163 15

GA Sanyo Si-N 2SC4922 SC-75 1,6 10

G6 … GA

http://www.serwis-elektroniki.com.pl/

Page 111:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

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Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

G

GA Siemens Si-Di BAW78A SOT-89 11

GA Siemens Si-N BFR35 SOT-23 10

GA1 NEC Si-P 2SB1871-GA1 SOT-89 11

GA2 NEC Si-P 2SB1871-GA2 SOT-89 11

GA3 NEC Si-P 2SB1871-GA3 SOT-89 11

GA6 Thomson Si-Di STPS160A DO-214AC 5×2,5 19

GB Hitachi Si-N 2SD1463-GB SOT-89 11

GB Siemens Si-Di BAW78B SOT-89 11

GB Siemens Si-N BFR35A SOT-23 10

GB1 NEC Si-P 2SB1578-GB1 SOT-89 11

GB2 NEC Si-P 2SB1578-GB2 SOT-89 11

GB3 NEC Si-P 2SB1578-GB3 SOT-89 11

GB3 Thomson Si-Di STPS1L30U DO-214AA 5×3,5 19

GB4 Thomson Si-Di STPS1L40A DO-214AC 5×2,5 19

GBA Thomson Z-Di SMCJ60CA SOD-15 8×5 19

GBB Thomson Z-Di SMCJ70CA SOD-15 8×5 19

GBE Thomson Z-Di SMCJ85CA SOD-15 8×5 19

GBG Thomson Z-Di SMCJ100CA SOD-15 8×5 19

GBI Thomson Z-Di SMCJ130CA SOD-15 8×5 19

GBL Thomson Z-Di SMCJ154CA SOD-15 8×5 19

GBM Thomson Z-Di SMCJ170CA SOD-15 8×5 19

GBN Thomson Z-Di SMCJ188CA SOD-15 8×5 19

GC Hitachi Si-N 2SC2734 SOT-23 10

GC Hitachi Si-N 2SC4264 SOT-323 2 10

GC Siemens Si-Di BAW78C SOT-89 11

GC Toshiba Si-Di U1GC44 DO-214AC 5 19

GC4 Thomson Si-Di STPS1L40U DO-214AA 5×3,5 19

GD Fagor Z-Di Z2SMB-7V5 DO-214AA 5 19

GD Siemens Si-Di BAW78D SOT-89 11

GDs Siemens Si-Di BAW78A (SCT-595) ~14

GDs Siemens Si-Di BAW78M (SCT-595) ~14

GE AEG Si-N BFR35AP SOT-23 10 BFT75

GE Fagor Z-Di Z2SMB-6V8 DO-214AA 5 19

GE Rohm Si-P 2SA1455K-E SOT-23 10

GE Siemens Si-Di BAW79A SOT-89 11

GA … GE

http://www.serwis-elektroniki.com.pl/

Page 112:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

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Dim.

Wymiary

Fig.

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Equivalence

Odpowiednik

G

GE Siemens Si-N BFR35AP SOT-23 10 BFT75

GF Europa Si-N BFR92P SOT-23 10

GF Fagor Z-Di Z2SMB-8V2 DO-214AA 5 19

GF Siemens Si-Di BAW79B SOT-89 11

GF Siemens Si-N BFN22 SOT-23 10

GF Siemens Si-N BFR92P SOT-23 10

GG AEG Si-P BF579R SOT-23 10

GG Europa Si-N BFR93P SOT-23 10

GG Fagor Z-Di Z2SMB-9V1 DO-214AA 5 19

GG Mitsubishi Si-P 2SA1369-G SOT-89 11

GG Siemens Si-Di BAW79C SOT-89 11

GG Siemens Si-N BFR93P SOT-23 10

GH Fagor Z-Di Z2SMB-10 DO-214AA 5 19

GH Mitsubishi Si-P 2SA1369-H SOT-89 11

GH Siemens Si-Di BAW79D SOT-89 11

GIA Hitachi Si-N-Darl 2SC3957-GIA SOT-143 13

GIB Hitachi Si-N-Darl 2SC3957-GIB SOT-143 13

GJ2 Sanyo N-FET 2SK968-2 SOT-23 10

GJ3 Sanyo N-FET 2SK968-3 SOT-23 10

GJ4 Sanyo N-FET 2SK968-4 SOT-23 10

GJ5 Sanyo N-FET 2SK968-5 SOT-23 10

GK Fagor Z-Di Z2SMB-11 DO-214AA 5 19

GK NEC Si-N 2SD1615-GK SOT-89 11

GK Sanyo MOS-N-FET-e* 2SK2969 SOT-23 10

GK Thomson Z-Di SM6T150 SOD-6 6×4 19

GL Fagor Z-Di Z2SMB-12 DO-214AA 5 19

GL NEC Si-N 2SD1615-GL SOT-89 11

GL Sanyo Si-P 2SA1496 SOT-23 10

GL Thomson Z-Di SM6T150A SOD-6 6×4 19

GM Fagor Z-Di Z2SMB-13 DO-214AA 5 19

GM NEC Si-N 2SD1615-GM SOT-89 11

GN Fagor Z-Di Z2SMB-15 DO-214AA 5 19

GN Sanyo Si-N 2SC4867 SOT-323 2 10

GN Sanyo Si-N 2SC4868 SOT-23 10

GN Sanyo Si-N 2SC4869 SOT-143 13

GE … GN

http://www.serwis-elektroniki.com.pl/

Page 113:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

Opis

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Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

G

GN Sanyo Si-N 2SC5489 (SSFP) 1,4 10

GN Sanyo Si-N 2SC5503 SOT-343 2 13

GN3 Sanyo Si-N 2SC4867-3 SOT-323 2 10

GN3 Sanyo Si-N 2SC4868-3 SOT-23 10

GN3 Sanyo Si-N 2SC4869-3 SOT-143 13

GN4 Sanyo Si-N 2SC4867-4 SOT-323 2 10

GN4 Sanyo Si-N 2SC4868-4 SOT-23 10

GN4 Sanyo Si-N 2SC4869-4 SOT-143 13

GN4 Sanyo Si-N 2SC5503-4 SOT-343 2 13

GN5 Sanyo Si-N 2SC4867-5 SOT-323 2 10

GN5 Sanyo Si-N 2SC4868-5 SOT-23 10

GN5 Sanyo Si-N 2SC4869-5 SOT-143 13

GN5 Sanyo Si-N 2SC5503-5 SOT-343 2 13

GO KEC Si-N KTC4375-O SOT-89 11

GO Toshiba Si-P 2SA2883-O SOT-89 11

GO Toshiba Si-N 2SC2996-O SOT-23 10

GP Fagor Z-Di Z2SMB-16 DO-214AA 5 19

GP NEC Si-N 2SD1615A-GP SOT-89 11

GQ Fagor Z-Di Z2SMB-18 DO-214AA 5 19

GQ NEC Si-N 2SD1615A-GQ SOT-89 11

GR Fagor Z-Di Z2SMB-20 DO-214AA 5 19

GR Hitachi Si-N 2SC4990 SOT-89 11

GR Rohm Si-P 2SA1455K-R SOT-23 10

GR Toshiba Si-N 2SC2996-R SOT-23 10

GS Fagor Z-Di Z2SMB-22 DO-214AA 5 19

GS Hitachi Si-P 2SB1520 SOT-89 11

GS Rohm Si-P 2SA1455K-S SOT-23 10

GT Fagor Z-Di Z2SMB-24 DO-214AA 5 19

GT Hitachi Si-N-Darl+Di 2SD2423 SOT-89 11

GT Sanyo Si-N 2SC4168 SOT-23 10

GT Sanyo Si-N 2SC4443 SOT-323 2 10

GT Thomson Z-Di SM6T200 SOD-6 6×4 19

GT1 Rohm Si-P BCX17 SOT-23 10

GU Fagor Z-Di Z2SMB-27 DO-214AA 5 19

GU Thomson Z-Di SM6T200A SOD-6 6×4 19

GN … GU

http://www.serwis-elektroniki.com.pl/

Page 114:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

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Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

H

GU1 Rohm Si-N BCX19 SOT-23 10

GUA Thomson Z-Di SMCJ60A SOD-15 8×5 19

GUB Thomson Z-Di SMCJ70A SOD-15 8×5 19

GUE Thomson Z-Di SMCJ85A SOD-15 8×5 19

GUG Thomson Z-Di SMCJ100A SOD-15 8×5 19

GUI Thomson Z-Di SMCJ130A SOD-15 8×5 19

GUL Thomson Z-Di SMCJ154A SOD-15 8×5 19

GUM Thomson Z-Di SMCJ170A SOD-15 8×5 19

GUN Thomson Z-Di SMCJ188A SOD-15 8×5 19

GV Fagor Z-Di Z2SMB-30 DO-214AA 5 19

GV Sanyo PIN-Di 1SV249 SOT-323 2 10

GV Sanyo PIN-Di 1SV251 SOT-23 10

GV Thomson Z-Di SM6T220 SOD-6 6×4 19

GW Fagor Z-Di Z2SMB-33 DO-214AA 5 19

GW Thomson Z-Di SM6T-220A SOD-6 6×4 19

GX Fagor Z-Di Z2SMB-36 DO-214AA 5 19

GX NEC Si-N 2SD2403-GX SOT-89 11

GY Fagor Z-Di Z2SMB-39 DO-214AA 5 19

GY KEC Si-N KTC4375-Y SOT-89 11

GY NEC Si-N 2SD2403-GY SOT-89 11

GY Sanyo Si-N 2SC3689 SOT-23 10

GY Sanyo Si-N 2SC4413 SOT-323 2 10

GY Toshiba Si-P 2SA2883-Y SOT-89 11

GY Toshiba Si-N 2SC2996-Y SOT-23 10

GZ Fagor Z-Di Z2SMB-43 DO-214AA 5 19

GZ NEC Si-N 2SD2403-GZ SOT-89 11

GZ Siemens Si-N BFR35AR SOT-23 10

H

H Hitachi GaAs-N-FET 2SK1229 SOT-173 17

H Hitachi C-Di HVU354 SOD-323 1,7 19

H Matsushita Si-P 2SA1035 SOT-23 10

H Matsushita Si-P 2SA1531A SOT-323 2 10

H Matsushita Si-P 2SB956 SOT-89 11

H Matsushita GaAs-N-FET 2SK1100 SOT-173 17

GU1 … H

http://www.serwis-elektroniki.com.pl/

Page 115:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

H

H Matsushita Si-Di MA2S376 SOD-523 1,3 19

H Matsushita Z-Di MAZF091 SOD-323 1,7 19

H Matsushita Z-Di MAZN091 SOD-523 1,3 19

H Matsushita Z-Di MAZS036 SOD-523 1,3 19

H Sanyo Si-N 2SC4446 SOT-323 2 10

H Sanyo N-FET 2SK2076 SOT-23 10

H Siemens C-Di BB659C (SCD-80) 1,3 19

H Siemens C-Di BBY51-03W (SCD-80) 1,3 19

H0 Toshiba Si-N 2SC4252 SOT-323 2 10

H0 Toshiba Si-N 2SC4255 SOT-23 10

H1 Ferranti Si-N BFS46 SOT-23 10

H1 General Si-P D71Y1.5T1 SOT-89 11

H1 Hitachi Si-Di HSU119 SOD-323 1,7 19

H1 Hitachi PIN-Di HVM187WK SOT-23 10

H1 Rohm Si-N+R IMH1A SOT-163 15

H1 Rohm Si-N+R UMH1N SOT-363 2 15

H1 SGS Si-P BCW69 SOT-23 10 BC557A

H1 Siemens Si-P BCW69 SOT-23 10 BC557A

H1 Siliconix N-FET SST4416 SOT-23 10

H1 Ferranti Si-P BCW69 SOT-23 10

H1 Philips Si-P BCW69 SOT-23 10

H10 Rohm Si-N+R IMH10A SOT-163 15

H10 Rohm Si-N+R UMH10N SOT-363 2 15

H11 NEC MOS-P-FET-e 2SJ166 SOT-23 10

H11 Rohm Si-N+R IMH11A SOT-163 15

H11 Rohm Si-N+R UMH11N SOT-363 2 15

H11 Valvo Si-P BCX71G SOT-23 10

H12 NEC MOS-P-FET-e 2SJ185 SOT-23 10

H12 Origin Si-Di SM-1XH12 (2,8×2,3) 9

H12 Valvo Si-P BCX71H SOT-23 10

H13 NEC MOS-P-FET-e 2SJ202 SOT-323 2 10

H13 Valvo Si-P BCX71J SOT-23 10

H14 NEC MOS-P-FET-e 2SJ203 SOT-23 10

H14 Rohm Si-N+R IMH14A SOT-163 15

H14 Rohm Si-N+R UMH14N SOT-363 2 15

H … H14

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

H

H14 Sanyo N-FET 2SK2076-14 SOT-23 10

H14 Valvo Si-P BCX71K SOT-23 10

H15 NEC MOS-P-FET-e 2SJ204 SOT-23 10

H15 Rohm Si-N+R IMH15A SOT-163 15

H15 Sanyo N-FET 2SK2076-15 SOT-23 10

H16 NEC MOS-P-FET-e 2SJ210 SOT-23 10

H16 Origin Si-Di SM-1XH16 (2,8×2,3) 9

H17 NEC MOS-P-FET-e 2SJ209 SOT-23 10

H18 NEC MOS-P-FET-e 2SJ211 SOT-23 10

H19 NEC MOS-P-FET-e 2SJ461 SOT-23 10

H1O Samsung Si-P KSA2755-O SOT-23 10

H1O Samsung Si-P KSA2859-O SOT-23 10

H1R Samsung Si-P KSA2755-R SOT-23 10

H1Y Samsung Si-P KSA2755-Y SOT-23 10

H1Y Samsung Si-P KSA2859-Y SOT-23 10

H2 Ferranti Si-N BFS46A SOT-23 10

H2 Hitachi PIN-Di HVM13 SOT-23 10

H2 Origin Si-Di F1H2 SOD-323 1,7 19

H2 Origin Si-Di SM-1XH02 (2,8×2,3) 9

H2 Rohm Si-N+R IMH2A SOT-163 15

H2 Rohm Z-Di UDZ7.5B SOD-323 1,7 19

H2 Rohm Z-Di UDZS7.5B SOD-323 1,7 19

H2 Rohm Si-N+R UMH2N SOT-363 2 15

H2 SGS Si-P BCW70 SOT-23 10 BC557B

H2 Siemens Si-P BCW70 SOT-23 10 BC557B

H2 Ferranti Si-P BCW70 SOT-23 10

H2 Motorola Si-P BCW70 SOT-23 10

H2 Philips Si-P BCW70 SOT-23 10

H21 NEC MOS-P-FET-e 2SJ463A SOT-323 2 10

H2O Samsung Si-N KSC2756-Y SOT-23 10

H2R Samsung Si-N KSC2756-R SOT-23 10

H2Y Samsung Si-N KSC2756-Y SOT-23 10

H3 Hitachi PIN-Di HVM187S SOT-23 10

H3 KEC C-Di KDV153 SOT-23 10

H3 NEC Si-P 2SA956-H3 SOT-23 10

H14 … H3

http://www.serwis-elektroniki.com.pl/

Page 117:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 108 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

H

H3 Rohm Si-N+R IMH3A SOT-163 15

H3 Rohm Si-N+R UMH3N SOT-363 2 15

H3 SGS Si-P BCW89 SOT-23 10 BC556A

H3 Ferranti Si-P BCW89 SOT-23 10

H3 Philips Si-P BCW89 SOT-23 10 BC556A

H3 Thomson Si-P BCW89 SOT-23 10

H31 Philips Si-P BCW89R SOT-23 10 BC556A

H31 SGS Si-P BCW89R SOT-23 10 BC556A

H31 Valvo Si-P BCW89R SOT-23 10

H3O Samsung Si-N KSC2757-O SOT-23 10

H3R Samsung Si-N KSC2757-R SOT-23 10

H3Y Samsung Si-N KSC2757-Y SOT-23 10

H4 Ferranti Si-P BCW69R SOT-23 10

H4 Hitachi PIN-Di HVM121WK SOT-23 10

H4 NEC Si-P 2SA956-H4 SOT-23 10

H4 Origin Si-Di F1H4 DO-214AC 5 19

H4 Origin Si-Di F1H4 SOD-323 1,7 19

H4 Origin Si-Di SM-1XH04 (2,8×2,3) 9

H4 Rohm Si-N+R IMH4A SOT-163 15

H4 Rohm Si-N+R UMH4N SOT-363 2 15

H4 Sanyo Si-N 2SC3134-4 SOT-23 10

H4 SGS Si-P BCW69R SOT-23 10 BC557A

H4 Siemens Si-P BCW69R SOT-23 10 BC557A

H4 Siliconix N-FET SST5484 SOT-23 10

H4 Valvo Si-P BCW69R SOT-23 10

H4Z Samsung Si-N KSC2758 SOT-23 10

H5 Ferranti Si-P BCW70R SOT-23 10

H5 Hitachi PIN-Di HVM14 SOT-23 10

H5 NEC Si-P 2SA956-H5 SOT-23 10

H5 Rohm Si-N+R IMH5A SOT-163 15

H5 Rohm Si-N+R UMH5N SOT-363 2 15

H5 Sanyo Si-N 2SC3134-5 SOT-23 10

H5 SGS Si-P BCW70R SOT-23 10 BC557B

H5 Siemens Si-P BCW70R SOT-23 10 BC557B

H5 Siliconix N-FET SST5485 SOT-23 10

H3 … H5

http://www.serwis-elektroniki.com.pl/

Page 118:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 109 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

H

H5 Valvo Si-P BCW70R SOT-23 10

H5O Samsung Si-N KSC2223-O SOT-23 10

H5R Samsung Si-N KSC2223-R SOT-23 10

H5Y Samsung Si-N KSC2223-Y SOT-23 10

H6 Ferranti Si-P BCW89R SOT-23 10

H6 Hitachi PIN-Di HVB14S SOT-323 2 10

H6 Hitachi PIN-Di HVM14S SOT-23 10

H6 NEC Si-P 2SA956-H6 SOT-23 10

H6 Origin Si-Di F1H6 DO-214AC 5 19

H6 Origin Si-Di SM-1XH06 (2,8×2,3) 9

H6 Rohm Si-N+R IMH6A SOT-163 15

H6 Rohm Si-N+R UMH6N SOT-363 2 15

H6 Sanyo Si-N 2SC3134-6 SOT-23 10

H6 Siliconix N-FET SST5486 SOT-23 10

H6O Samsung Si-N KSC2759-O SOT-23 10

H6R Samsung Si-N KSC2759-R SOT-23 10

H6Y Samsung Si-N KSC2759-Y SOT-23 10

H7 Hitachi PIN-Di HVM14SR SOT-23 10

H7 Philips Si-P BCF70 SOT-23 10 BC560B

H7 Rohm Si-N+R IMH7A SOT-163 15

H7 Rohm Si-N+R UMH7N SOT-363 2 15

H7 Sanyo Si-N 2SC3134-7 SOT-23 10

H71 Philips Si-P BCF70R SOT-23 10 BC560B

H71 Valvo Si-P BCF70R SOT-23 10

H8 Origin Si-Di SM-1XH08 (2,8×2,3) 9

H8 Rohm Si-N+R IMH8A SOT-163 15

H8 Rohm Si-N+R UMH8N SOT-363 2 15

H8Z Samsung Si-N KSC2734: SOT-23 10

H9 Rohm Si-N+R IMH9A SOT-163 15

H9 Rohm Si-N+R UMH9N SOT-363 2 15

H9 Toshiba Si-Di 1SS344 SOT-23 10

H9Z Samsung Si-N KSC3120: SOT-23 10

HA Hitachi Si-N 2SD1464-HA SOT-89 11

HA NEC Si-P µPA601P SOT-163 15

HA Sanyo Si-P 2SA1883 SC-75 1,6 10

H5 … HA

http://www.serwis-elektroniki.com.pl/

Page 119:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

H

HA Siemens Si-P BSS25 SOT-23 10

HA Siemens GaAs-N-FET-d CFY65-12 Micro-X 17

HA Toshiba Si-N 2SC2804 SOT-103 7

HA Toshiba Si-N 2SC3119 SOT-23 10

HAO Samsung Si-N KSC3123 SOT-23 10

HB Hitachi Si-N 2SD1464-HB SOT-89 11

HB Sanyo Si-N 2SC3137 SOT-103 7

HB SGS Si-N BFN22 SOT-23 10 BF820

HB Siemens GaAs-N-FET-d CFY65-14 SOT-173 17

HB Siemens GaAs-N-FET CFY75-13 SOT-143 13

HB Toshiba Si-N 2SC3120 SOT-23 10

HB Toshiba Si-N 2SC4245 SOT-323 2 10

HB Siemens Si-N BFN22 SOT-23 10 BF820

HC Hitachi Si-N 2SC2733 SOT-23 10

HC Hitachi Si-N 2SC4463 SOT-323 2 10

HC Matsushita Si-N/P+R XP0431N SOT-363 2 15

HC SGS Si-P BFN23 SOT-23 10 BF821

HC Siemens Si-P BFN23 SOT-23 10 BF821

HC Siemens GaAs-N-FET CFY75-15 SOT-143 13

HC Toshiba Si-N 2SC3121 SOT-23 10

HC Toshiba Si-N 2SC4246 SOT-323 2 10

HC Siemens Si-P BFN23 SOT-23 10

HD Fagor Z-Di Z2SMB-47 DO-214AA 5 19

HD Toshiba Si-N 2SC3122 SOT-23 10

HD Toshiba Si-N 2SC4249 SOT-323 2 10

HE Matsushita Si-N XP05554 SOT-363 2 15

HE Toshiba Si-N 2SC3123 SOT-23 10

HE Toshiba Si-N 2SC4250 SOT-323 2 10

HF Fagor Z-Di Z2SMB-51 DO-214AA 5 19

HF KEC Si-N KTC3882 SOT-23 10

HF KEC Si-N KTC4082 SOT-323 2 10

HF Siemens Si-P BFN23 SOT-23 10

HF Toshiba Si-N 2SC2805 SOT-103 7

HF Toshiba Si-N 2SC3124 SOT-23 10

HF Toshiba Si-N 2SC4251 SOT-323 2 10

HA … HF

http://www.serwis-elektroniki.com.pl/

Page 120:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

H

HG Fagor Z-Di Z2SMB-56 DO-214AA 5 19

HG Mitsubishi Si-N 2SC3439-G SOT-89 11

HG Toshiba Si-N 2SC2806 SOT-103 7

HH Fagor Z-Di Z2SMB-62 DO-214AA 5 19

HH KEC Si-N KTC3881 SOT-23 10

HH KEC Si-N KTC4081 SOT-323 2 10

HH Mitsubishi Si-N 2SC3439-H SOT-89 11

HH Toshiba Si-N 2SC3125 SOT-23 10

HH Toshiba Si-N 2SC4253 SOT-323 2 10

HHs Siemens C-Di BBY51-07 SOT-143 13

HI Toshiba Si-N 2SC4247 SOT-323 2 10

HI- Hitachi MOS-N-FET-d 3SK188 SOT-143 13

HJ Mitsubishi Si-N 2SC3439-J SOT-89 11

HJ Toshiba Si-N 2SC3602 SOT-103 7

HK Fagor Z-Di Z2SMB-68 DO-214AA 5 19

HK NEC Si-N 2SD1006-HK SOT-89 11

HK Toshiba Si-N 2SC3828 SOT-143 13

HL Fagor Z-Di Z2SMB-75 DO-214AA 5 19

HL Matsushita Si-N/P+R XN04382 SOT-163 15

HL NEC Si-N 2SD1006-HL SOT-89 11

HL Sanyo Si-P 2SA1502 SOT-23 10

HL Sanyo Si-P 2SA1722 SOT-323 2 10

HL Toshiba Si-N 2SC3862 SOT-23 10

HM Fagor Z-Di Z2SMB-82 DO-214AA 5 19

HM NEC Si-N 2SD1006-HM SOT-89 11

HM Toshiba Si-N 2SC3547B SOT-23 10

HM Toshiba Si-N 2SC4248 SOT-323 2 10

HN Fagor Z-Di Z2SMB-91 DO-214AA 5 19

HN Matsushita Si-N/P+R XP0121N SOT-353 2 14

HN Sanyo Si-N 2SC4871 SOT-323 2 10

HN Sanyo Si-N 2SC5540 (SSFP) 1,4 10

HN Toshiba Si-N 2SC4214 SOT-143 13

HN Toshiba Si-N 2SC4244 SOT-323 2 10

HN3 Sanyo Si-N 2SC4871-3 SOT-323 2 10

HN4 Sanyo Si-N 2SC4871-4 SOT-323 2 10

HG … HN4

http://www.serwis-elektroniki.com.pl/

Page 121:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

H

HN5 Sanyo Si-N 2SC4871-5 SOT-323 2 10

HO KEC Si-P KTA1663-O SOT-89 11

HO Matsushita Si-N/P+R XP04286 SOT-363 2 15

HO Toshiba Si-P 2SA1203-O SOT-89 11

HP Fagor Z-Di Z2SMB-100 DO-214AA 5 19

HP NEC Si-N 2SD1007-HP SOT-89 11

HP Rohm Si-P 2SA1036-HP (MMT) ~10

HP Rohm Si-P 2SA1036K-P SOT-23 10

HP Rohm Si-P 2SA1577-P SOT-323 2 10

HP Toshiba Si-N 2SC4527 SOT-23 10

HQ Fagor Z-Di Z2SMB-110 DO-214AA 5 19

HQ Matsushita Si-P 2SB956-Q SOT-89 11

HQ Mitsubishi Si-N 2SC3928-Q SOT-23 10

HQ Mitsubishi Si-N 2SC4155-Q SOT-323 2 10

HQ NEC Si-N 2SD1007-HQ SOT-89 11

HQ Rohm Si-P 2SA1036-HQ (MMT) ~10

HQ Rohm Si-P 2SA1036K-Q SOT-23 10

HQ Rohm Si-P 2SA1577-Q SOT-323 2 10

HR Fagor Z-Di Z2SMB-120 DO-214AA 5 19

HR Matsushita Si-P 2SA1035-R SOT-23 10

HR Matsushita Si-P 2SA1531A-R SOT-323 2 10

HR Matsushita Si-P 2SB956-R SOT-89 11

HR Mitsubishi Si-N 2SC3928-R SOT-23 10

HR Mitsubishi Si-N 2SC4155-R SOT-323 2 10

HR NEC Si-N 2SD1007-HR SOT-89 11

HR Rohm Si-P 2SA1036-HR (MMT) ~10

HR Rohm Si-P 2SA1036K-R SOT-23 10

HR Rohm Si-P 2SA1577-R SOT-323 2 10

HS Fagor Z-Di Z2SMB-130 DO-214AA 5 19

HS Hitachi Si-N 2SD2540 SOT-89 11

HS Matsushita Si-P 2SA1035-S SOT-23 10

HS Matsushita Si-P 2SA1531A-S SOT-323 2 10

HS Matsushita Si-P 2SB956-S SOT-89 11

HS Matsushita N-FET 2SK2751: SOT-23 10

HS Matsushita N-FET 2SK2988 SC-75 1,6 10

HN5 … HS

http://www.serwis-elektroniki.com.pl/

Page 122:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

I

HS Mitsubishi Si-N 2SC3928-S SOT-23 10

HS Mitsubishi Si-N 2SC4155-S SOT-323 2 10

HT Fagor Z-Di Z2SMB-150 DO-214AA 5 19

HT Matsushita Si-P 2SA1035-T SOT-23 10

HT Matsushita Si-P 2SA1531A-T SOT-323 2 10

HT Matsushita Si-P 2SB956-T SOT-89 11

HT Matsushita Si-N 2SC5378 SOT-323 2 10

HT Matsushita Si-N 2SC5379 SC-75 1,6 10

HT Matsushita GaAs-IC GN01019B SOT-163 15

HT Mitsubishi Si-N 2SC3928-T SOT-23 10

HT Mitsubishi Si-N 2SC4155-T SOT-323 2 10

Ht1 Philips Si-N PUMH11 SOT-363 15

HTQ Matsushita Si-N 2SC5378-Q SOT-323 2 10

HTQ Matsushita Si-N 2SC5379-Q SC-75 1,6 10

HTR Matsushita Si-N 2SC5378-R SOT-323 2 10

HTR Matsushita Si-N 2SC5379-R SC-75 1,6 10

HTS Matsushita Si-N 2SC5378-S SOT-323 2 10

HTS Matsushita Si-N 2SC5379-S SC-75 1,6 10

HU Fagor Z-Di Z2SMB-160 DO-214AA 5 19

HU Matsushita GaAs-IC GN01100B SOT-363 2 15

HV Fagor Z-Di Z2SMB-180 DO-214AA 5 19

HV Matsushita MOS-N-FET-d 3SK285 SOT-143 13

HW Fagor Z-Di Z2SMB-200 DO-214AA 5 19

HW Matsushita MOS-N-FET-d 3SK286 SOT-143 13

HX Hitachi MOS-N-FET-e 2SK2922 SOT-89 11

HX NEC Si-P 2SB1572-HX SOT-89 11

HY Hitachi MOS-N-FET-e* 2SK1772 SOT-89 11

HY KEC Si-P KTA1663-Y SOT-89 11

HY NEC Si-P 2SB1572-XY SOT-89 11

HY Toshiba Si-P 2SA1203-Y SOT-89 11

HZ Matsushita GaAs-IC GN02018B SOT-163 15

HZ NEC Si-P 2SB1572-HZ SOT-89 11

I

I Matsushita Si-P 2SB1073 SOT-89 11

HS … I

http://www.serwis-elektroniki.com.pl/

Page 123:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

I

I Matsushita Si-P 2SB1220 SOT-323 2 10

I Matsushita Si-P 2SB1463 SC-75 1,6 10

I Matsushita Si-P 2SB792 SOT-23 10

I Matsushita GaAs-N-FET 2SK1196 SOT-173 17

I Siemens C-Di BBY51-02W (SCD-80) 1,3 19

I Siemens C-Di BBY52-03W SOD-323 1,7 19

I9 Toshiba Si-Di 1SS336 SOT-23 10

IA NEC MOS-N-FET-e µPA602T SOT-163 15

IB Matsushita Si-N XP06531 SOT-363 2 15

IB NEC MOS-N-FET-e* µPA611TA SOT-163 15

IC Matsushita GaAs-IC GN01037B SOT-163 15

IC Matsushita Si-N+R UN7231 SOT-89 11

IC- Hitachi Si-N 2SC3016 SOT-23 10

ID Matsushita GaAs-IC GN01038B SOT-163 15

ID- Hitachi Si-N 2SC3127 SOT-23 10

IE Matsushita GaAs-IC GN01039B SOT-163 15

IE Rohm Si-N 2SC3722K-E SOT-23 10

IFB Hitachi Si-P 2SB973-B SOT-23 10

IFC Hitachi Si-P 2SB973-C SOT-23 10

IGD Hitachi MOS-N-FET-d 2SK1215-D SOT-323 2 10

IGD Hitachi MOS-N-FET-d 2SK360-D SOT-23 10

IGE Hitachi MOS-N-FET-d 2SK1215-E SOT-323 2 10

IGE Hitachi MOS-N-FET-d 2SK360-E SOT-23 10

IGF Hitachi MOS-N-FET-d 2SK1215-F SOT-323 2 10

IGF Hitachi MOS-N-FET-d 2SK360-F SOT-23 10

IGT Thomson Si-N SOA06 SOT-23 10

IHC Hitachi N-FET 2SK431-C SOT-23 10

IHD Hitachi N-FET 2SK431-D SOT-23 10

IHE Hitachi N-FET 2SK431-E SOT-23 10

IHF Hitachi N-FET 2SK431-F SOT-23 10

IJ- Hitachi Si-N 2SC3374 SOT-23 10

IK Matsushita Si-N 2SD2210 SOT-89 11

IK NEC Si-P 2SA1463-IK SOT-89 11

IKB Hitachi Si-N 2SC3521-B SOT-23 10

IKC Hitachi Si-N 2SC3521-C SOT-23 10

I … IKC

http://www.serwis-elektroniki.com.pl/

Page 124:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

I

IL Hitachi Si-N 2SC3493 SOT-23 10

IL Matsushita GaAs-FET-IC GN04006N SOT-163 15

IL- Hitachi Si-N 2SC4263 SOT-323 2 10

IL- NEC Si-P 2SA1463-IL SOT-89 11

IM Matsushita GaAs-FET-IC GN01046B SOT-163 15

INB Hitachi Si-P 2SA1468-B SOT-23 10

INC Hitachi Si-P 2SA1468-C SOT-23 10

IO KEC Si-P KTA1298-O SOT-23 10

IO Toshiba Si-P 2SA1296-O SOT-23 10

IO Toshiba Si-N 2SC3515-O SOT-89 11

IO Toshiba Si-N 2SC3515-O SOT-89 11

IP Matsushita Si-P 2SB1073-P SOT-89 11

IP- Hitachi Si-N 2SC3793 SOT-23 10

IP- Hitachi Si-N 2SC4262 SOT-323 2 10

IQ Matsushita Si-P 2SB1073-Q SOT-89 11

IQ Matsushita Si-P 2SB1220-Q SOT-323 2 10

IQ Matsushita Si-P 2SB792-Q SOT-23 10

IR Matsushita Si-P 2SB1073-R SOT-89 11

IR Matsushita Si-P 2SB1220-R SOT-323 2 10

IR Matsushita Si-P 2SB1463-R SS Mini 1,6 10

IR Matsushita Si-P 2SB792-R SOT-23 10

IR Matsushita GaAs-IC GN01064B SOT-163 15

IR Rohm Si-N 2SC3722K-R SOT-23 10

IRD Hitachi Si-P 2SA1484-D SOT-23 10

IRE Hitachi Si-P 2SA1484-E SOT-23 10

IS Matsushita Si-P 2SB1220-S SOT-323 2 10

IS Matsushita Si-P 2SB1463-S SS Mini 1,6 10

IS Matsushita Si-P 2SB792-S SOT-23 10

IS Rohm Si-N 2SC3722K-S SOT-23 10

IS Sanyo Si-P 2SA1881 SOT-23 10

IS- Hitachi Si-N 2SC3513 SOT-23 10

IS- Hitachi Si-N 2SC4537 SOT-323 2 10

IS5 Sanyo Si-P 2SA1881-5 SOT-23 10

IS6 Sanyo Si-P 2SA1881-6 SOT-23 10

IS7 Sanyo Si-P 2SA1881-7 SOT-23 10

IL … IS7

http://www.serwis-elektroniki.com.pl/

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Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

J

IT Matsushita Si-P 2SB1220-T SOT-323 2 10

IT Matsushita Si-P 2SB1463-T SS Mini 1,6 10

IT Matsushita Si-P 2SB792-T SOT-23 10

IT Matsushita Si-N/P+R XP04387 SOT-363 2 15

IT- Hitachi MOS-N-FET-d 3SK162 SOT-143 13

IU Matsushita Si-P 2SB1589 SOT-89 11

IU- Hitachi GaAs-N-FET 2SK668 SOT-143 13

IV- Hitachi MOS-N-FET-d 3SK136 SOT-143 13

IW Matsushita Si-N 2SC5019 SOT-89 11

IW- Hitachi MOS-N-FET-d 3SK137 SOT-143 13

IX- Hitachi MOS-N-FET-d 3SK138 SOT-143 13

IY KEC Si-P KTA1298-Y SOT-23 10

IY Toshiba Si-P 2SA1298-Y SOT-23 10

IY Toshiba Si-N 2SC3515-Y SOT-89 11

IY- Hitachi MOS-N-FET-d 3SK194 SOT-143 13

IZ Matsushita Si-N/P XN04A88 SOT-163 15

IZ- Hitachi MOS-N-FET-d 3SK154 SOT-143 13

IZ2 Sanyo N-FET 3SK167-2 SOT-143 13

IZ3 Sanyo N-FET 3SK167-3 SOT-143 13

IZ4 Sanyo N-FET 3SK167-4 SOT-143 13

IZ5 Sanyo N-FET 3SK167-5 SOT-143 13

J

J Hitachi C-Di HVC357 SOD-523 1,3 19

J Hitachi C-Di HVU357 SOD-323 1,7 19

J Matsushita GaAs-N-FET 2SK1687 SOT-173 17

J Toshiba Si-Di S5566J DO-41 9

J01 Thomson Si-P SO2906R SOT-23 10

J03 Thomson Si-P SO2907AR SOT-23 10

J05 Thomson Si-P SO2907R SOT-23 10

J06 Thomson Si-P SO2894R SOT-23 10

J1 Ferranti C-Di ZC830A SOT-23 10

J1 Hitachi Si-Di HSM402WK SOT-23 10

J1 Rohm Si-P+R FMJ1A SOT-163 15

J12 Thomson Si-P SO2906AR SOT-23 10

IT … J12

http://www.serwis-elektroniki.com.pl/

Page 126:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 117 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

J

J18 Thomson Si-P SO679R SOT-23 10

J1A Zetex C-Di ZC830A SOT-23 10

J1B Zetex C-Di ZC830B SOT-23 10

J1O Samsung Si-P KSA1298-O SOT-23 10

J1S Zetex C-Di ZC830 SOT-23 10

J1Y Samsung Si-P KSA1298-Y SOT-23 10

J2 Ferranti C-Di ZC833A SOT-23 10

J2 NEC N-FET 2SK2552-J2 SS Mini 1,6 10

J2 NEC N-FET 2SK67-2 SOT-23 10

J2 NEC N-FET 2SK67-J2 ~10

J2 Origin Si-Di F1J2 DO-214AC 5 19

J2 Rohm Z-Di UDZ8.2B SOD-323 1,7 19

J2 Rohm Z-Di UDZS8.2B SOD-323 1,7 19

J2 Sanyo Si-N 2SC3142-2 SOT-23 10

J25 Origin Si-Di SS05J25 ~DO-41 9

J25 Thomson Si-P SO3906R SOT-23 10

J26 Thomson Si-P SO3905R SOT-23 10

J2A Zetex C-Di ZC833A SOT-23 10

J2B Zetex C-Di ZC833B SOT-23 10

J2S Zetex C-Di ZC833 SOT-23 10

J3 Ferranti C-Di ZC831A SOT-23 10

J3 Hitachi Si-Di HSM402S SOT-23 10

J3 KEC C-Di KDS2236S SOT-23 10

J3 NEC N-FET 2SK2552-J3 SS Mini 1,6 10

J3 NEC N-FET 2SK67-3 SOT-23 10

J3 NEC N-FET 2SK67-J3 ~10

J3 Sanyo Si-N 2SC3142-3 SOT-23 10

J32 Thomson Si-P SO5400R SOT-23 10

J33 Thomson Si-P SO5401R SOT-23 10

J39 Thomson Si-P SO692R SOT-23 10

J3A Zetex C-Di ZC831A SOT-23 10

J3B Zetex C-Di ZC831B SOT-23 10

J3S Zetex C-Di ZC831 SOT-23 10

J3U Origin Si-Di SS1J3U (2,8×2,3) 9

J3U Origin Si-Di SS3J3U ~DO-27A 9

J18 … J3U

http://www.serwis-elektroniki.com.pl/

Page 127:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 118 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

J

J4 Ferranti C-Di ZC832A SOT-23 10

J4 NEC N-FET 2SK2552-J4 SS Mini 1,6 10

J4 NEC N-FET 2SK67-4 SOT-23 10

J4 NEC N-FET 2SK67-J4 ~10

J4 Origin Si-Di F1J4 DO-214AC 5 19

J4 Origin Si-Di F2J4 SOD-6 6,4 19

J4 Origin Si-Di SS1.5J4 (2,8×2,3) 9

J4 Origin Si-Di SS1J4 (2,8×2,3) 9

J4 Origin Si-Di SS3J4 ~DO-27A 9

J4 Sanyo Si-N 2SC3142-4 SOT-23 10

J40 Thomson Si-P SO506R SOT-23 10

J4A Zetex C-Di ZC832A SOT-23 10

J4B Zetex C-Di ZC832B SOT-23 10

J4S Origin Si-Di F2J4S SOD-6 6,4 19

J4S Zetex C-Di ZC832 SOT-23 10

J5 Ferranti C-Di ZC834A SOT-23 10

J5 NEC N-FET 2SK2552-J5 SS Mini 1,6 10

J5 NEC N-FET 2SK67-5 SOT-23 10

J5 NEC N-FET 2SK67-J5 ~10

J5 Origin Si-Di SS1.5J5 (2,8×2,3) 9

J5A Zetex C-Di ZC834A SOT-23 10

J5B Zetex C-Di ZC834B SOT-23 10

J5S Zetex C-Di ZC834 SOT-23 10

J6 Ferranti C-Di ZC835A SOT-23 10

J6 NEC N-FET 2SK2552-J6 SS Mini 1,6 10

J6 NEC N-FET 2SK67-6 SOT-23 10

J6 NEC N-FET 2SK67-J6 ~10

J6 Origin Si-Di F1J6 DO-214AC 5 19

J6 Origin Si-Di F2J6 SOD-6 6,4 19

J6 Origin Si-Di SS1J6 (2,8×2,3) 9

J6 Origin Si-Di SS3J6 ~DO-27A 9

J6A Zetex C-Di ZC835A SOT-23 10

J6B Zetex C-Di ZC835B SOT-23 10

J6S Origin Si-Di F2J6S SOD-6 6,4 19

J6S Zetex C-Di ZC835 SOT-23 10

J4 … J6S

http://www.serwis-elektroniki.com.pl/

Page 128:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

J

J7 Ferranti C-Di ZC835A SOT-23 10

J7 NEC N-FET 2SK2552-J7 SS Mini 1,6 10

J7 NEC N-FET 2SK67-7 SOT-23 10

J7 NEC N-FET 2SK67-J7 ~10

J7A Zetex C-Di ZC836A SOT-23 10

J7B Zetex C-Di ZC836B SOT-23 10

J7S Zetex C-Di ZC836 SOT-23 10

J8 Ferranti Si-P BCX71RJ SOT-23 10

J8 NEC N-FET 2SK67-8 SOT-23 10

J8 NEC N-FET 2SK67-J8 ~10

J88 Thomson Si-P SO970R SOT-23 10

J9 Origin Si-Di F1J9 DO-214AC 5 19

J9 Origin Si-Di F2J9 SOD-6 6,4 19

J9 Origin Si-Di SS1J9 (2,8×2,3) 9

J9 Origin Si-Di SS2J9 ~DO-27A 9

JA NEC MOS-N-FET-e µPA603T SOT-163 15

JA Philips Si-Di BAT74 SOT-143 13

JA Philips Si-Di BAV74 SOT-23 10 BAV70

JA Sanyo MOS-P-FET-e 2SJ187 SOT-89 11

JA Sanyo N-FET 2SK2170 SC-75 1,6 10

JA Motorola Si-Di BAV74 SOT-23 10

JA Siemens Si-Di BAV74 SOT-23 10 BAV70

JA Thomson Si-Di BAV74 SOT-23 10

JB NEC MOS-P-FET-e µPA610TA SOT-163 15

JB Siemens Si-Di BAR74 SOT-23 10

JB Thomson Si-Di BAR74 SOT-23 10

JC Hitachi Si-N 2SC2735 SOT-23 10

JC Mitsubishi Si-N 2SC4265 SOT-323 2 10

JC Mitsubishi P-FET 2SJ125-C SOT-23 10

JC Mitsubishi P-FET 2SJ145-C SOT-323 2 10

JC Philips Si-Di BAL74W SOT-323 2 10

JC SGS Si-Di BAL74 SOT-23 10 (BAR74)

JC Philips Si-Di BAL74 SOT-23 10 (BAR74)

JC Siemens Si-Di BAL74 SOT-23 10 (BAR74)

JC Thomson Si-Di BAL74 SOT-23 10

J7 … JC

http://www.serwis-elektroniki.com.pl/

Page 129:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

J

JD Mitsubishi P-FET 2SJ125-D SOT-23 10

JD Mitsubishi P-FET 2SJ145-D SOT-323 2 10

JD Philips Si-Di BAW56 SOT-23 10 BAW62(2x)

JD Sanyo MOS-P-FET-e 2SJ287 SOT-89 11

JD Siemens Si-Di BAW56 SOT-23 10 BAW62(2x)

JD Thomson Si-Di BAW56 SOT-23 10

JE AEG Si-Di BAV99 SOT-23 10

JE Mitsubishi P-FET 2SJ125-E SOT-23 10

JE Mitsubishi P-FET 2SJ145-E SOT-323 2 10

JE Philips Si-Di BAV99 SOT-23 10 BAW62(2x)

JE Siemens Si-Di BAV99 SOT-23 10 BAW62(2x)

JF Philips Si-Di BAL99 SOT-23 10 (BAR99)

JF Philips Si-Di BAL99W SOT-323 2 10

JF SGS Si-Di BAL99 SOT-23 10 (BAR99)

JF Siemens Si-Di BAL99 SOT-23 10 (BAR99)

JF Thomson Si-Di BAL99 SOT-23 10

JG Sanyo MOS-P-FET-e 2SJ316 SOT-89 11

JG Toshiba N-FET 2SK208-G SOT-23 10

JG Toshiba N-FET 2SK879-GR SOT-323 2 10

JG Siemens Si-Di BAR99 SOT-23 10

JG Thomson Si-Di BAR99 SOT-23 10

JH AEG Si-Di BAV70 SOT-23 10

JH Hitachi Si-P 2SB1518-D SOT-89 11

JH Siemens Si-Di BAV70 SOT-23 10

JID Hitachi Si-P 2SA1566-D SOT-23 10

JIE Hitachi Si-P 2SA1566-E SOT-23 10

JJ AEG Si-Di BAW56 SOT-23 10

JJ Hitachi Si-P 2SB1518-E SOT-89 11

JJ Philips Si-Di BAV70 SOT-23 13 BAW62(2x)

JJ Siemens Si-Di BAV70 SOT-23 10 BAW62(2x)

JKs Siemens MOS-N-FET-d BF1009 SOT-143 13

JL Sanyo Si-P 2SA1508 SOT-23 10

JL. Sanyo MOS-P-FET-e* 2SJ560 SOT-89 11

JLs Siemens MOS-N-FET-d BF1009S SOT-143 13

JM Rohm Si-N 2SC2059-JM (MMT) ~10

JD … JM

http://www.serwis-elektroniki.com.pl/

Page 130:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

J

JM Rohm Si-N 2SC2059K-M SOT-23 10

JM Rohm Si-N 2SC4099-M SOT-323 2 10

JM Rohm Si-N 2SC4649-M SS Mini 1,6 10

JM Sanyo MOS-P-FET-e* 2SJ561 SOT-89 11

JN Rohm Si-N 2SC2059-JN (MMT) ~10

JN Rohm Si-N 2SC2059K-N SOT-23 10

JN Rohm Si-N 2SC4099-N SOT-323 2 10

JN Rohm Si-N 2SC4649-N SS Mini 1,6 10

JN Sanyo MOS-P-FET-e* 2SJ562 SOT-89 11

JO Sanyo MOS-P-FET-e* 2SJ563 SOT-89 11

JO Toshiba Si-P 2SA1384-O SOT-89 11

JO Toshiba N-FET 2SK208-O SOT-23 10

JO Toshiba N-FET 2SK879-O SOT-323 2 10

JP Rohm Si-N 2SC2059-JP (MMT) ~10

JP Rohm Si-N 2SC2059K-P SOT-23 10

JP Rohm Si-N 2SC4099-P SOT-323 2 10

JP Rohm Si-N 2SC4649-P SS Mini 1,6 10

JP Sanyo MOS-P-FET-e* 2SJ578 SOT-89 11

JP SGS Si-Di BAS19 SOT-23 10 BAV19

JP Siemens Si-Di BAW101 SOT-143 13

JP Siemens Si-Di BAW56GT SOT-143 13

JP Siemens Si-Di BAW101 SOT-143 13

JP Philips Si-Di BAS19 SOT-23 10 BAV19

JP Siemens Si-Di BAS19 SOT-23 10 BAV19

JQ Sanyo MOS-P-FET-e* 2SJ579 SOT-89 11

JR SGS Si-Di BAS20 SOT-23 10 BAV20

JR Toshiba Si-P 2SA1384-R SOT-89 11

JR Toshiba N-FET 2SK208-R SOT-23 10

JR Toshiba N-FET 2SK879-R SOT-323 2 10

JR Philips Si-Di BAS20 SOT-23 10 BAV20

JR Siemens Si-Di BAS20 SOT-23 10 BAV20

JS Hitachi Si-N 2SD2532 SOT-89 11

JS Sanyo Si-P 2SA1815 SOT-23 10

JS SGS Si-Di BAS21 SOT-23 10 BAV21

JS Siemens Si-Di BAW56G SOT-143 13

JM … JS

http://www.serwis-elektroniki.com.pl/

Page 131:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

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Equivalence

Odpowiednik

K

JS Siemens Si-Di BAW100 SOT-143 13 MA157A

JS Philips Si-Di BAS21 SOT-23 10 BAV21

JS Siemens Si-Di BAS21 SOT-23 10 BAV21

JS3 Sanyo Si-P 2SA1815-3 SOT-23 10

JS4 Sanyo Si-P 2SA1815-4 SOT-23 10

JS5 Sanyo Si-P 2SA1815-5 SOT-23 10

JT Sanyo Si-N 2SC4006 SOT-23 10

JT Sanyo Si-N 2SC4269 SOT-23 10

JT SGS Si-Di BAS28 SOT-143 13 BAW62(2x)

JT Philips Si-Di BAS28 SOT-143 13 BAW62(2x)

JT Siemens Si-Di BAS28 SOT-143 13 BAW62(2x)

JTs Siemens Si-Di BAS28W SOT-343 2 13

JU Motorola Si-Di BAS16 SOT-23 10

JU Siemens Si-Di BAS16 SOT-23 10

JU Thomson Si-Di BAS16 SOT-23 10

JV Sanyo PIN-Di 1SV263 SOT-323 2 10

JV Sanyo PIN-Di 1SV266 SOT-23 10

JV Siemens Si-Di BAS116 SOT-23 10

JVp Philips Si-Di BAS116 SOT-23 10

JX Siemens Si-Di BAV170 SOT-23 10

JXp Philips Si-Di BAV170 SOT-23 10

JXs Siemens Si-Di BAV170 SOT-23 10

JY Hitachi MOS-P-FET-e 2SJ244 SOT-89 11

JY Sanyo Si-N 2SC3770 SOT-23 10

JY Siemens Si-Di BAV199 SOT-23 10

JY Toshiba N-FET 2SK208-Y SOT-23 10

JY Toshiba N-FET 2SK879-Y SOT-323 2 10

JYp Philips Si-Di BAV199 SOT-23 10

JYs Siemens Si-Di BAV199 SOT-23 10

JZ Siemens Si-Di BAW156 SOT-23 10

JZp Philips Si-Di BAW156 SOT-23 10

K

K Hitachi C-Di HVU315 SOD-323 1,7 19

K Matsushita Si-P 2SB1208 SOT-89 11

JS … K

http://www.serwis-elektroniki.com.pl/

Page 132:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

K

K Matsushita Si-N 2SC2778 SOT-23 10

K Matsushita Si-N 2SC3936 SOT-323 2 10

K Matsushita Si-N 2SC4655 SC-75 1,6 10

K Matsushita GaAs-N-FET 2SK1688 SOT-173 17

K Matsushita Si-Di MA2S304 SOD-523 1,3 19

K Matsushita Z-Di MAZS039 SOD-523 1,3 19

K Siemens Si-Di BAT68-03W SOD-323 1,7 19

K Siemens C-Di BBY52-02W (SCD-80) 1,3 19

K1 NEC N-FET 2SK57-1 SOT-23 10

K1 Rohm MOS-N-FET-e* UM5K1N SOT-353 2 14

K1 Rohm MOS-N-FET-e* UM6K1N SOT-363 2 15

K1 SGS Si-N BCW71 SOT-23 10 BC547A

K1 Siemens Si-N BCW71 SOT-23 10 BC547A

K1 Siliconix MOS-N-FET-e VN10KT SOT-23 10

K1 Toshiba MOS-N-FET-e 2SK2741 SOT-89 11

K1 Ferranti Si-N BCW71 SOT-23 10

K1 Philips Si-N BCW71 SOT-23 10

K11 Valvo Si-N BCX70G SOT-23 10

K12 Valvo Si-N BCX70H SOT-23 10

K13 Valvo Si-N BCX70J SOT-23 10

K14 NEC N-FET 2SK238-K14 SOT-23 10

K14 Valvo Si-N BCX70K SOT-23 10

K15 NEC N-FET 2SK238-K15 SOT-23 10

K16 NEC N-FET 2SK238-K16 SOT-23 10

K17 NEC N-FET 2SK238-K17 SOT-23 10

K1O Samsung Si-N KSC3265-O SOT-23 10

K1Y Samsung Si-N KSC3265-Y SOT-23 10

K2 NEC N-FET 2SK57-2 SOT-23 10

K2 SGS Si-N BCW72 SOT-23 10 BC547B

K2 Siemens Si-N BCW72 SOT-23 10 BC547B

K2 Toshiba MOS-N-FET-e* 2SK2742 SOT-89 11

K2 Ferranti Si-N BCW72 SOT-23 10

K2 Motorola Si-N BCW72 SOT-23 10

K2 Philips Si-N BCW72 SOT-23 10

K24 NEC N-FET 2SK160A-K24 SOT-23 10

K … K24

http://www.serwis-elektroniki.com.pl/

Page 133:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

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Device

Opis

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Typ

Case

Obudowa

Dim.

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Odpowiednik

K

K24 NEC N-FET 2SK853A-K24 SOT-323 2 10

K25 NEC N-FET 2SK160A-K25 SOT-23 10

K25 NEC N-FET 2SK853A-K25 SOT-323 2 10

K26 NEC N-FET 2SK160A-K26 SOT-23 10

K26 NEC N-FET 2SK853A-K26 SOT-323 2 10

K27 NEC N-FET 2SK160A-K27 SOT-23 10

K27 NEC N-FET 2SK853A-K27 SOT-323 2 10

K3 NEC N-FET 2SK57-3 SOT-23 10

K3 Sanyo Si-N 2SC3143-3 SOT-23 10

K3 SGS Si-N BCW81 SOT-23 10 BC547C

K3 Toshiba MOS-N-FET-e* 2SK2839 SOT-89 11

K3 Philips Si-N BCW81 SOT-23 10 BC547C

K31 Philips Si-N BCW81R SOT-23 10 BC547C

K31 SGS Si-N BCW81R SOT-23 10 BC547C

K31 Valvo Si-N BCW81R SOT-23 10

K3A KEC C-Di KDV804S SOT-23 10

K3B KEC C-Di KDV804S SOT-23 10

K3C KEC C-Di KDV804S SOT-23 10

K3D KEC C-Di KDV804S SOT-23 10

K3E KEC C-Di KDV804S SOT-23 10

K4 Ferranti Si-N BCW71R SOT-23 10

K4 NEC N-FET 2SK160-4 SOT-23 10

K4 NEC N-FET 2SK853-K4 SOT-323 2 10

K4 Sanyo Si-N 2SC3143-4 SOT-23 10

K4 SGS Si-N BCW71R SOT-23 10 BC547A

K4 Siemens Si-N BCW71R SOT-23 10 BC547A

K4 Toshiba MOS-N-FET-e* 2SK2836 SOT-89 11

K4 Valvo Si-N BCW71R SOT-23 10

K41 NEC N-FET 2SK520-K41 SOT-23 10

K42 NEC N-FET 2SK520-K42 SOT-23 10

K43 NEC N-FET 2SK520-K43 SOT-23 10

K44 NEC N-FET 2SK520-K44 SOT-23 10

K45 NEC N-FET 2SK520-K45 SOT-23 10

K5 NEC N-FET 2SK160-5 SOT-23 10

K5 NEC N-FET 2SK853-K5 SOT-323 2 10

K24 … K5

http://www.serwis-elektroniki.com.pl/

Page 134:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 125 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

K

K5 Sanyo Si-N 2SC3143-5 SOT-23 10

K5 SGS Si-N BCW72R SOT-23 10 BC547B

K5 Siemens Si-N BCW72R SOT-23 10 BC547B

K5 Valvo Si-N BCW72R SOT-23 10

K51 NEC N-FET 2SK508-K51 SOT-23 10

K52 NEC N-FET 2SK508-K52 SOT-23 10

K53 NEC N-FET 2SK508-K53 SOT-23 10

K6 Ferranti Si-N BCV71R SOT-23 10

K6 NEC N-FET 2SK160-6 SOT-23 10

K6 NEC N-FET 2SK853-K6 SOT-323 2 10

K7 NEC N-FET 2SK160-7 SOT-23 10

K7 NEC N-FET 2SK853-K7 SOT-323 2 10

K7 SGS Si-N BCV71 SOT-23 10 BC546A

K7 Ferranti Si-N BCV71 SOT-23 10 BC546A

K7 Philips Si-N BCV71 SOT-23 10 BC546A

K71 Ferranti Si-N BCV71R SOT-23 10 BC546A

K71 Philips Si-N BCV71R SOT-23 10 BC546A

K71 SGS Si-N BCV71R SOT-23 10 BC546A

K71 Valvo Si-N BCV71R SOT-23 10

K8 SGS Si-N BCV72 SOT-23 10 BC546B

K8 Ferranti Si-N BCV72 SOT-23 10 BC546B

K8 Philips Si-N BCV72 SOT-23 10 BC546B

K81 Ferranti Si-N BCV72R SOT-23 10 BC546B

K81 Philips Si-N BCV72R SOT-23 10 BC546B

K81 SGS Si-N BCV72R SOT-23 10 BC546B

K81 Valvo Si-N BCV72R SOT-23 10

K9 Ferranti Si-N BCV72R SOT-23 10

K9 Toshiba Si-Di 1SS348 SOT-23 10

K9 Philips Si-N BCF81 SOT-23 10 BC550C

K91 Philips Si-N BCF81R SOT-23 10 BC550C

K91 Valvo Si-N BCF81R SOT-23 10

KA NEC Si-N µPA604T SOT-163 15

KA NEC Si-N µPA670T SOT-363 2 15

KA Philips MOS-N-FET-e BSS87 SOT-89 11

KA Rohm MOS-N-FET-e 2SK2103 SOT-89 11

K5 … KA

http://www.serwis-elektroniki.com.pl/

Page 135:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 126 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

K

KA Sanyo Si-P 2SA1965 SC-75 1,6 10

KA Siemens Si-N BFT75 SOT-23 10

KA Siemens MOS-N-FET-e BSS87 SOT-89 11

KA Toshiba Si-N 2SC4409 SOT-89 11

KAG Toshiba N-FET 2SK368-GR SOT-23 10

KAO Toshiba N-FET 2SK368-O SOT-23 10

KAY Toshiba N-FET 2SK368-Y SOT-23 10

KB Hitachi N-FET 2SK323-B SOT-23 10

KB Matsushita Si-N 2SC2778-B SOT-23 10

KB Matsushita Si-N 2SC3936-B SOT-323 2 10

KB Matsushita Si-N 2SC4655-B SS Mini 1,6 10

KB Matsushita Si-N 2SC4972-B (T Mini) ~10

KB Matsushita GaAs-FET-IC GN01057N SOT-143 13

KB Mitsubishi N-FET 2SK433-B SOT-23 10

KB Philips MOS-P-FET BSS192 SOT-89 11 2SK848

KB Sanyo MOS-N-FET-e 2SK1311 SOT-89 11

KB Siemens Si-N BFQ29 SOT-23 10

KB Siemens MOS-P-FET BSS192 SOT-89 11 2SK848

KB Toshiba Si-N 2SC4539 SOT-89 11

KB Valvo MOS-P-FET BSS192 SOT-89 11

KC Hitachi N-FET 2SK323-C SOT-23 10

KC Matsushita Si-N 2SC2778-C SOT-23 10

KC Matsushita Si-N 2SC3936-C SOT-323 2 10

KC Matsushita Si-N 2SC4655-C SS Mini 1,6 10

KC Matsushita Si-N 2SC4972-C (T Mini) ~10

KC Mitsubishi N-FET 2SK433-C SOT-23 10

KC Rohm MOS-N-FET-e 2SK2463 SOT-89 11

KC Sanyo MOS-N-FET-e 2SK1467 SOT-89 11

KC Siemens Si-N BFQ29P SOT-23 10 BFT75

KC Toshiba Si-N 2SC4540 SOT-89 11

KCG Toshiba N-FET 2SK625-G SOT-23 10

KCO Toshiba N-FET 2SK625-O SOT-23 10

KCR Toshiba N-FET 2SK625-R SOT-23 10

KCY Toshiba N-FET 2SK625-Y SOT-23 10

KD Fagor Z-Di P6SMB-6.8 DO-214AA 5 19

KA … KD

http://www.serwis-elektroniki.com.pl/

Page 136:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 127 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

K

KD Hitachi N-FET 2SK323-D SOT-23 10

KD Matsushita GaAs-IC GN02022B SOT-163 15

KD Matsushita GaAs-IC GN02035B SOT-363 2 15

KD Mitsubishi N-FET 2SK433-D SOT-23 10

KD Mitsubishi N-FET 2SK930-D SOT-323 2 10

KD Sanyo MOS-N-FET-e 2SK1470 SOT-89 11

KD Toshiba Si-N 2SC4541 SOT-89 11

KE Fagor Z-Di P6SMB-6.8A DO-214AA 5 19

KE Hitachi N-FET 2SK123-E SOT-23 10

KE Mitsubishi N-FET 2SK433-E SOT-23 10

KE Mitsubishi N-FET 2SK930-E SOT-323 2 10

KE Rohm MOS-N-FET-e* 2SK3065 SOT-89 11

KE Sanyo MOS-N-FET-e 2SK1473 SOT-89 11

KE Toshiba N-FET 2SK1062 SOT-23 10

KF Fagor Z-Di P6SMB-7.5 DO-214AA 5 19

KF Sanyo MOS-N-FET-e 2SJ1724 SOT-89 11

KF Toshiba P-FET 2SJ168 SOT-23 10

KG Fagor Z-Di P6SMB-7.5A DO-214AA 5 19

KG KEC N-FET KTK211-G SOT-23 10

KG Sanyo MOS-N-FET-e 2SK1726 SOT-89 11

KG Toshiba N-FET 2SK211-GR SOT-23 10

KG Toshiba N-FET 2SK881-GR SOT-323 2 10

KH Fagor Z-Di P6SMB-8.2 DO-214AA 5 19

KH Matsushita GaAs-IC GN02023B SOT-163 15

KH Sanyo MOS-N-FET-e 2SK1728 SOT-89 11

KH Toshiba MOS-N-FET-e 2SK1826 SOT-23 10

KH Toshiba MOS-N-FET-e 2SK1827 SOT-323 2 10

KI Sanyo MOS-N-FET-e 2SK2151 SOT-89 11

KI Toshiba MOS-N-FET-e 2SK1828 SOT-23 10

KI Toshiba MOS-N-FET-e 2SK1829 SOT-323 2 10

KI Toshiba MOS-N-FET-e 2SK1830 SS Mini 1,6 10

KID Hitachi Si-N 2SC4050-D SOT-23 10

KIE Hitachi Si-N 2SC4050-E SOT-23 10

KJ Sanyo MOS-N-FET-e 2SK1847 SOT-23 10

KJ Sanyo MOS-N-FET-e 2SK2152 SOT-89 11

KD … KJ

http://www.serwis-elektroniki.com.pl/

Page 137:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 128 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

K

KJ Toshiba MOS-N-FET-e 2SK2036 SOT-23 10

KJ Toshiba MOS-N-FET-e 2SK2037 SOT-23 2 10

KK Fagor Z-Di P6SMB-8.2A DO-214AA 5 19

KK NEC Si-P 2SB805-KK SOT-89 11

KL Fagor Z-Di P6SMB-9.1 DO-214AA 5 19

KL KEC N-FET KTK211-L SOT-23 10

KL NEC Si-P 2SB805-KL SOT-89 11

KL Rohm MOS-N-FET-e* 2SK2731 SOT-23 10

KL Sanyo Si-P 2SA1510 SOT-23 10

KM Fagor Z-Di P6SMB-9.1A DO-214AA 5 19

KM NEC Si-P 2SB805-KM SOT-89 11

KM Philips MOS-FET BST80 SOT-89 11 BST70A

KM Sanyo N-FET 2SK2171 SOT-89 11

KM Toshiba MOS-N-FET-e 2SK2009 SOT-23 10

KM Valvo MOS-N-FET-e BST80 SOT-89 11

KM3 Sanyo N-FET 2SK2171-3 SOT-89 11

KM4 Sanyo N-FET 2SK2171-4 SOT-89 11

KM5 Sanyo N-FET 2SK2171-5 SOT-89 11

KN Fagor Z-Di P6SMB-10 DO-214AA 5 19

KN Philips MOS-N-FET-e BST84 SOT-89 11 BST74A

KN Rohm MOS-N-FET-e* 2SK3018 SOT-323 2 10

KN Rohm MOS-N-FET-e* 2SK3019 SS Mini 1,6 10

KN Sanyo Si-N 2SC4983 SOT-23 10

KN Sanyo N-FET 2SK2218 SOT-89 11

KN Toshiba MOS-N-FET-e 2SJ305 SOT-23 10

KN Valvo MOS-N-FET-e BST84 SOT-89 11

KN3 Sanyo N-FET 2SK2218-3 SOT-89 11

KN4 Sanyo N-FET 2SK2218-4 SOT-89 11

KN5 Sanyo Si-N 2SC4983-5 SOT-23 10

KN5 Sanyo N-FET 2SK2218-5 SOT-89 11

KN6 Sanyo Si-N 2SC4983-6 SOT-23 10

KN7 Sanyo Si-N 2SC4983-7 SOT-23 10

KO KEC Si-P KTA1001-O SOT-89 11

KO KEC N-FET KTK211-O SOT-23 10

KO Philips MOS-N-FET-e BST86 SOT-89 11 BST76A

KJ … KO

http://www.serwis-elektroniki.com.pl/

Page 138:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 129 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

K

KO Sanyo MOS-N-FET-e 2SK2260 SOT-89 11

KO Toshiba N-FET 2SK211-O SOT-23 10

KO Toshiba N-FET 2SK881-O SOT-323 2 10

KO Valvo MOS-N-FET-e BST86 SOT-89 11

KP Fagor Z-Di P6SMB-10A DO-214AA 5 19

KP NEC Si-P 2SB806-KP SOT-89 11

KP Sanyo MOS-N-FET-e 2SK2316 SOT-89 11

KP Toshiba MOS-N-FET-e 2SK2033 SOT-23 10

KP Toshiba MOS-N-FET-e 2SK2034 SOT-323 2 10

KP Toshiba MOS-N-FET-e 2SK2035 SS Mini 1,6 10

KQ Fagor Z-Di P6SMB-11 DO-214AA 5 19

KQ NEC Si-P 2SB806-KQ SOT-89 11

KQ Toshiba MOS-P-FET-e 2SJ343 SOT-23 10

KQ Toshiba MOS-P-FET-e 2SJ344 SOT-323 2 10

KR Fagor Z-Di P6SMB-11A DO-214AA 5 19

KR Matsushita GaAs-IC GN02024B SOT-163 15

KR NEC Si-P 2SB806-KR SOT-89 11

KS Fagor Z-Di P6SMB-12 DO-214AA 5 19

KS Hitachi Si-N 2SD2533 SOT-89 11

KS Sanyo Si-P 2SA1813 SOT-323 2 10

KS Sanyo Si-P 2SA1814 SOT-23 10

KS Sanyo MOS-N-FET-e* 2SK3119 SOT-89 11

KS Toshiba MOS-P-FET-e 2SJ345 SOT-23 10

KS Toshiba MOS-P-FET-e 2SJ346 SOT-323 2 10

KS Toshiba MOS-P-FET-e 2SJ347 SS Mini 1,6 10

KT Fagor Z-Di P6SMB-12A DO-214AA 5 19

KT Sanyo Si-N 2SC4007 SOT-23 10

KT Sanyo Si-N 2SC4270 SOT-23 10

KT Sanyo MOS-N-FET-e* 2SK3120 SOT-89 11

KU Fagor Z-Di P6SMB-13 DO-214AA 5 19

KU Sanyo MOS-N-FET-e* 2SK3121 SOT-89 11

KV Fagor Z-Di P6SMB-13A DO-214AA 5 19

KV Matsushita GaAs-IC GN01094B SOT-363 2 15

KV Sanyo PIN-Di 1SV264 SOT-323 2 10

KV Sanyo PIN-Di 1SV267 SOT-23 10

KO … KV

http://www.serwis-elektroniki.com.pl/

Page 139:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 130 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

KW Fagor Z-Di P6SMB-15 DO-214AA 5 19

KW Matsushita GaAs-IC GN01096B SOT-363 2 15

KW Sanyo MOS-N-FET-e* 2SK3122 SOT-89 11

KX Fagor Z-Di P6SMB-15A DO-214AA 5 19

KX Philips MOS-N-FET-e PMBF170 SOT-23 10

KX Sanyo MOS-N-FET-e* 2SK3291 SOT-89 11

KY Fagor Z-Di P6SMB-16 DO-214AA 5 19

KY Hitachi MOS-N-FET-e* 2SK1764 SOT-89 11

KY KEC Si-P KTA1001-Y SOT-89 11

KY KEC N-FET KTK211-Y SOT-23 10

KY Sanyo Si-N 2SC3771 SOT-23 10

KY Sanyo MOS-N-FET-e* 2SK3292 SOT-89 11

KY Toshiba N-FET 2SK211-Y SOT-23 10

KY Toshiba N-FET 2SK881-Y SOT-323 2 10

KZ Fagor Z-Di P6SMB-16A DO-214AA 5 19

KZ Sanyo MOS-N-FET-e* 2SK3293 SOT-89 11

L

L Hitachi C-Di HVU356 SOD-323 1,7 19

L Matsushita Si-N 2SD1821A SOT-323 2 10

L Matsushita Si-N 2SD2240A SC-75 1,6 10

L Matsushita Si-N 2SD814A SOT-23 10

L Matsushita GaAs-N-FET 2SK1689 SOT-173 17

L Matsushita Si-Di MA2S372 SOD-523 1,3 19

L Matsushita Z-Di MAZS043 SOD-523 1,3 19

L Sanyo Si-N 2SC4211 SOT-323 2 10

L Siemens Si-Di BAT62-02W (SCD-80) 1,3 19

L Siemens Si-Di BAT62-03W SOD-323 1,7 19

L Siemens C-Di BBY53-02W (SCD-80) 1,3 19

L0 Siliconix Si-Di SST510 SOT-23 10

L1 Ferranti Si-N BFS36 SOT-323 2 10

L1 Ferranti Si-P BSS65 SOT-23 10

L1 Rohm Si-P+Di UML1N SOT-353 2 14

L1 Siliconix Si-Di SST511 SOT-23 10

L15 NEC Si-N 2SC3624A-L15 SOT-23 10

KW … L15

http://www.serwis-elektroniki.com.pl/

Page 140:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 131 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

L15 NEC Si-N 2SC4181A-L15 SOT-323 2 10

L16 NEC Si-N 2SC3624A-L16 SOT-23 10

L16 NEC Si-N 2SC4181A-L16 SOT-323 2 10

L17 NEC Si-N 2SC3624-L17 SOT-23 10

L17 NEC Si-N 2SC4181-L17 SOT-323 2 10

L18 NEC Si-N 2SC3624-L18 SOT-23 10

L18 NEC Si-N 2SC4181-L18 SOT-323 2 10

L1G Toshiba Si-N HN2C01FU-GR SOT-363 2 15

L1X Samsung N-FET KSK123: SOT-23 10

L1Y Toshiba Si-N HN2C01FU-Y SOT-363 2 15

L2 Ferranti Si-N BFS36A SOT-323 2 10

L2 Ferranti Si-P BSS69 SOT-23 10

L2 Rohm Z-Di UDZ9.1B SOD-323 1,7 19

L2 Rohm Z-Di UDZS9.1B SOD-323 1,7 19

L2 Rohm Si-N+Di UML2N SOT-353 2 14

L2 Siliconix Si-Di SST502 SOT-23 10

L20 Philips Si-Di BAS29 SOT-23 10 BAX12A

L20 SGS Si-Di BAS29 SOT-23 10 BAX12A

L20 Siemens Si-Di BAS29 SOT-23 10 BAX12A

L20 Valvo Si-Di BAS29 SOT-23 10

L21 Philips Si-Di BAS31 SOT-23 10 BAX12A(2x)

L21 SGS Si-Di BAS31 SOT-23 10 BAX12A(2x)

L21 Siemens Si-Di BAS31 SOT-23 10 BAX12A(2x)

L21 Valvo Si-Di BAS31 SOT-23 10

L22 Philips Si-Di BAS32 MiniMELF 3,4×1,6 20 BAW62

L22 Philips Si-Di BAS35 SOT-23 10 BAX12A(2x)

L22 Valvo Si-Di BAS35 SOT-23 10

L27 Philips Si-Di BAS35 SOT-23 10 BAX12A(2x)

L2X Samsung N-FET KSK211: SOT-23 10

L3 Ferranti Si-P BFS37 SOT-323 2 10

L3 Ferranti Si-P BSS70 SOT-23 10

L3 Motorola Si-N MMBC1623 SOT-23 10 2SC1623

L3 NEC Si-N 2SC1623-L3 SOT-23 10

L3 Samsung Si-N KST1623L3 SOT-23 10

L3 Samsung Si-N MMBC1623 SOT-23 10 2SC1623

L15 … L3

http://www.serwis-elektroniki.com.pl/

Page 141:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 132 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

L3 Siliconix Si-Di SST503 SOT-23 10

L30 NEC Si-N FA1L4L SOT-23 10

L30 NEC Si-N GA1L4L SOT-323 2 10

L30 Philips Si-Di BAV23 SOT-143 13

L30 Philips Si-Di BAV23 SOT-143 13 BAV21

L31 NEC Si-N FA1L4M SOT-23 10

L31 NEC Si-N GA1L4M SOT-323 2 10

L31 Philips Si-Di BAV23S SOT-23 10

L32 NEC Si-N FA1F4M SOT-23 10

L32 NEC Si-N GA1F4M SOT-323 2 10

L33 NEC Si-N FA1A4M SOT-23 10

L33 NEC Si-N GA1A4M SOT-323 2 10

L34 NEC Si-N FA1A4P SOT-23 10

L34 NEC Si-N GA1A4P SOT-323 2 10

L35 NEC Si-N FA1F4N SOT-23 10

L35 NEC Si-N GA1F4N SOT-323 2 10

L36 NEC Si-N FA1L3Z-O SOT-23 10

L36 NEC Si-N GA1L3Z-O SOT-323 2 10

L37 NEC Si-N FA1L3Z-P SOT-23 10

L37 NEC Si-N GA1L3Z-P SOT-323 2 10

L38 NEC Si-N FA1L3Z-K SOT-23 10

L38 NEC Si-N GA1L3Z-K SOT-323 2 10

L4 Ferranti Si-P BFS37A SOT-323 2 10

L4 Ferranti Si-P BSS65R SOT-23 10

L4 Motorola Si-N MMBC1623 SOT-23 10 2SC1623

L4 NEC Si-N 2SC1623-L4 SOT-23 10

L4 NEC Si-N 2SC4177-L4 SOT-323 2 10

L4 NEC Si-N 2SC4783-L4 SS Mini 1,6 10

L4 Philips Si-Di BAT254 SOD-110 2 19

L4 Philips Si-Di BAT54W SOT-323 2 10

L4 Samsung Si-N KST1623L4 SOT-23 10

L4 Samsung Si-N MMBC1623 SOT-23 10 2SC1623

L4 Sanyo Si-N 2SC2812-L4 SOT-23 10

L4 Shindengen Si-Di D1FL40 DO-214AC 5 19

L4 Siliconix Si-Di SST504 SOT-23 10

L3 … L4

http://www.serwis-elektroniki.com.pl/

Page 142:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 133 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

L4 Philips Si-Di BAT54 SOT-23 10 BAT85

L41 Philips Si-Di BAT74 SOT-143 13 BAT85

L42 Philips Si-Di BAT54A SOT-23 10 BAT85(2X)

L42 Zetex Si-Di BAT54A SOT-23 10

L43 Philips Si-Di BAT54C SOT-23 10 BAT85(2X)

L43 Zetex Si-Di BAT54C SOT-23 10

L44 Philips Si-Di BAT54S SOT-23 10 BAT85(2X)

L44 Zetex Si-Di BAT54S SOT-23 10

L4Z Zetex Si-Di BAT54 SOT-23 10

L5 Ferranti Si-N BFT27 SOT-323 2 10

L5 Ferranti Si-P BSS69R SOT-23 10

L5 Motorola Si-N MMBC1623 SOT-23 10 2SC1623

L5 NEC Si-N 2SC1623-L5 SOT-23 10

L5 NEC Si-N 2SC4177-L5 SOT-323 2 10

L5 NEC Si-N 2SC4783-L5 SS Mini 1,6 10

L5 Samsung Si-N KST1623L5 SOT-23 10

L5 Samsung Si-N MMBC1623 SOT-23 10 2SC1623

L5 Sanyo Si-N 2SC2812-L5 SOT-23 10

L5 Siliconix Si-Di SST505 SOT-23 10

L5 Philips Si-Di BAS55 SOT-23 10

L51 Philips Si-Di BAS56 SOT-143 13 BAV10

L52 Philips Si-Di BAS678 SOT-23 10

L6 Ferranti Si-N BSS47 SOT-323 2 10

L6 Ferranti Si-P BSS70R SOT-23 10

L6 Motorola Si-N MMBC1623 SOT-23 10 2SC1623

L6 NEC Si-N 2SC1623-L6 SOT-23 10

L6 NEC Si-N 2SC4177-L6 SOT-323 2 10

L6 NEC Si-N 2SC4783-L6 SS Mini 1,6 10

L6 Samsung Si-N KST1623L6 SOT-23 10

L6 Samsung Si-N MMBC1623 SOT-23 10 2SC1623

L6 Sanyo Si-N 2SC2812-L6 SOT-23 10

L6 Siemens PIN-Di BAR17 SOT-23 10

L6 Siliconix Si-Di SST506 SOT-23 10

L61 NEC Si-N FA1L4Z-Q SOT-23 10

L61 NEC Si-N GA1L4Z-Q SOT-323 2 10

L4 … L61

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

L62 NEC Si-N FA1L4Z-P SOT-23 10

L62 NEC Si-N GA1L4Z-P SOT-323 2 10

L63 NEC Si-N FA1L4Z-K SOT-23 10

L63 NEC Si-N GA1L4Z-K SOT-323 2 10

L64 NEC Si-N FA1F4Z-Q SOT-23 10

L64 NEC Si-N GA1F4Z-Q SOT-323 2 10

L65 NEC Si-N FA1F4Z-P SOT-23 10

L65 NEC Si-N GA1F4Z-P SOT-323 2 10

L66 NEC Si-N FA1F4Z-K SOT-23 10

L66 NEC Si-N GA1F4Z-K SOT-323 2 10

L67 NEC Si-N FA1A4Z-Q SOT-23 10

L67 NEC Si-N GA1A4Z-Q SOT-323 2 10

L68 NEC Si-N FA1A4Z-P SOT-23 10

L68 NEC Si-N GA1A4Z-P SOT-323 2 10

L69 NEC Si-N FA1A4Z-K SOT-23 10

L69 NEC Si-N GA1A4Z-K SOT-323 2 10

L7 Ferranti Si-N BSS56 SOT-323 2 10

L7 Motorola Si-N MMBC1623 SOT-23 10 2SC1623

L7 NEC Si-N 2SC1623-L7 SOT-23 10

L7 NEC Si-N 2SC4177-L7 SOT-323 2 10

L7 NEC Si-N 2SC4783-L7 SS Mini 1,6 10

L7 Samsung Si-N KST1623L7 SOT-23 10

L7 Samsung Si-N MMBC1623 SOT-23 10 2SC1623

L7 Sanyo Si-N 2SC2812-L7 SOT-23 10

L7 Siliconix Si-Di SST507 SOT-23 10

L8 Philips C-Di BA792 SOD-110 2 19

L8 Siemens PIN-Di BAR15-1 SOT-23 10

L8 Siliconix Si-Di SST508 SOT-23 10

L81 NEC Si-N FA1L3M SOT-23 10

L81 NEC Si-N GA1L3M SOT-323 2 10

L82 NEC Si-N FA1L3N SOT-23 10

L82 NEC Si-N GA1L3N SOT-323 2 10

L83 NEC Si-N FA1A3Q SOT-23 10

L83 NEC Si-N GA1A3Q SOT-323 2 10

L9 Siemens PIN-Di BAR16-1 SOT-23 10

L62 … L9

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

L9 Siliconix Si-Di SST509 SOT-23 10

L9 Toshiba Si-Di 1SS349 SOT-23 10

LA AEG Si-P BF550 SOT-23 10 BF450

LA KEC Si-N KTD1003-A SOT-89 11

LA NEC Si-P µPA605T SOT-163 15

LA NEC Si-P µPA671T SOT-363 2 15

LA NEC Si-N HD2A3M SOT-89 11

LA Siliconix MOS-P-FET-e Si1303DL SOT-323 2 10

LA Toshiba Si-P 2SA1681 SOT-89 11

LA Philips Si-P BF550 SOT-23 10 BF450

LA Siemens Si-P BF550 SOT-23 10 BF450

LB AEG MOS-N-FET BF999 SOT-23 10

LB AEG MOS-N-FET-d S525T SOT-143 13

LB Hitachi Si-N 2SC2462-B SOT-23 10

LB KEC Si-N KTD1003-B SOT-89 11

LB NEC Si-N HD2F3P SOT-89 11

LB Siemens MOS-N-FET BF999 SOT-23 10

LB Siliconix MOS-P-FET-e Si1305DL SOT-323 2 10

LB Toshiba Si-P 2SA1734 SOT-89 11

LC Hitachi Si-N 2SC2462-C SOT-23 10

LC KEC Si-N KTD1003-C SOT-89 11

LC Mitsubishi Si-N 2SC4357-C SOT-89 11

LC NEC Si-N HD2L3N SOT-89 11

LC Siliconix MOS-P-FET-e Si1307DL SOT-323 2 10

LC Toshiba Si-P 2SA1735 SOT-89 11

LD Fagor Z-Di P6SMB-18 DO-214AA 5 19

LD Hitachi Si-N 2SC2462-D SOT-23 10

LD Mitsubishi Si-N 2SC4357-D SOT-89 11

LD NEC Si-N HD2A4M SOT-89 11

LD Thomson Z-Di SM6T6V8C SOD-6 6×4 19

LD Toshiba Si-P 2SA1736 SOT-89 11

LD Siemens MOS-N-FET-d BF543 SOT-23 10

LD1 NEC Si-N FA3L4Z SOT-23 10

LE Fagor Z-Di P6SMB-18A DO-214AA 5 19

LE Mitsubishi Si-N 2SC3052-E SOT-23 10

L9 … LE

http://www.serwis-elektroniki.com.pl/

Page 145:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 136 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

LE Mitsubishi Si-N 2SC4154-E SOT-323 2 10

LE Mitsubishi Si-N 2SC4357-E SOT-89 11

LE NEC Si-N HD2L2Q SOT-89 11

LE Rohm Si-N 2SC2412KLN-E SOT-23 10

LE Rohm Si-N 2SC2412L-LE (MMT) ~10

LE Thomson Z-Di SM6T6V8CA SOD-6 6×4 19

LE Philips Si-P BF660 SOT-23 10 BF606A

LE Siemens Si-P BF660 SOT-23 10

LEs Siemens Si-P BF660W SOT-323 2 10

LF Fagor Z-Di P6SMB-20 DO-214AA 5 19

LF Mitsubishi Si-N 2SC3052-F SOT-23 10

LF Mitsubishi Si-N 2SC4154-F SOT-323 2 10

LF NEC Si-N HD2F2Q SOT-89 11

LF Thomson Z-Di SM6T7V5C SOD-6 6×4 19

LFs Siemens Si-P BF770 SOT-23 10

LG Fagor Z-Di P6SMB-20A DO-214AA 5 19

LG KEC Si-N KTC4075-GR SOT-323 2 10

LG Mitsubishi Si-N 2SC3052-G SOT-23 10

LG Mitsubishi Si-N 2SC4154-G SOT-323 2 10

LG Siemens Si-P BF767 SOT-23 10

LG Siemens Si-N BF775A SOT-23 10

LG Thomson Z-Di SM6T7V5CA SOD-6 6×4 19

LG Toshiba Si-N 2SC2712-GR SOT-23 10

LG Toshiba Si-N 2SC4116-GR SOT-323 2 10

LG Toshiba Si-N 2SC4207-GR SOT-153 14

LG Toshiba Si-N 2SC4738-GR SS Mini 1,6 10

LG Toshiba Si-N 2SC4944-GR SOT-353 2 14

LH Fagor Z-Di P6SMB-22 DO-214AA 5 19

LH AEG Si-P BF569 SOT-23 10 BF970

LH Philips Si-P BF569 SOT-23 10 BF970

LH Siemens Si-P BF569 SOT-23 10 BF970

LJ AEG Si-P BF579 SOT-23 10 BF979

LJ Sanyo MOS-N-FET-e 2SK1848 SOT-23 10

LJ Philips Si-P BF579 SOT-23 10 BF979

LJ Siemens Si-P BF579 SOT-23 10 BF979

LE … LJ

http://www.serwis-elektroniki.com.pl/

Page 146:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 137 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

LK Fagor Z-Di P6SMB-22A DO-214AA 5 19

LK NEC Si-N 2SD1000-LK SOT-89 11

LK Siemens Si-P BF568 SOT-23 10

LK Siemens Si-N BF799 SOT-23 10 BF570

LKs Siemens Si-N BF799W SOT-323 2 10

LL Fagor Z-Di P6SMB-24 DO-214AA 5 19

LL KEC Si-N KTC4075-BL SOT-323 2 10

LL NEC Si-N 2SD1000-LL SOT-89 11

LL Sanyo Si-P 2SA1518 SOT-23 10

LL Toshiba Si-N 2SC2712-BL SOT-23 10

LL Toshiba Si-N 2SC4116-BL SOT-323 2 10

LL Toshiba Si-N 2SC4207-BL SOT-153 14

LL Toshiba Si-N 2SC4738-BL SS Mini 1,6 10

LM AEG Si-P BF569R SOT-23 10

LM Fagor Z-Di P6SMB-24A DO-214AA 5 19

LM NEC Si-N 2SD1000-LM SOT-89 11

LM Philips MOS-FET BST120 SOT-89 11

LM Valvo MOS-P-FET-e BST120 SOT-89 11

LN Fagor Z-Di P6SMB-27 DO-214AA 5 19

LN Philips MOS-P-FET-e BST122 SOT-89 11

LN Sanyo Si-N 2SC5226 SOT-323 2 10

LN Sanyo Si-N 2SC5227 SOT-23 10

LN Sanyo Si-N 2SC5228 SOT-143 13

LN Sanyo Si-N 2SC5488 (SSFP) 1,4 10

LN Sanyo Si-N 2SC5501 SOT-343 2 13

LN Thomson Z-Di SM6T10C SOD-6 6×4 19

LN Valvo MOS-P-FET-e BST122 SOT-89 11

LN3 Sanyo Si-N 2SC5226-3 SOT-323 2 10

LN3 Sanyo Si-N 2SC5227-3 SOT-23 10

LN3 Sanyo Si-N 2SC5228-3 SOT-143 13

LN4 Sanyo Si-N 2SC5226-4 SOT-323 2 10

LN4 Sanyo Si-N 2SC5227-4 SOT-23 10

LN4 Sanyo Si-N 2SC5228-4 SOT-143 13

LN4 Sanyo Si-N 2SC5501-4 SOT-343 2 13

LN5 Sanyo Si-N 2SC5226-5 SOT-323 2 10

LK … LN5

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

L

LN5 Sanyo Si-N 2SC5227-5 SOT-23 10

LN5 Sanyo Si-N 2SC5228-5 SOT-143 13

LN5 Sanyo Si-N 2SC5501-5 SOT-343 2 13

LO KEC Si-N KTC4075-O SOT-323 2 10

LO Philips P-FET BSR174 SOT-23 10

LO Toshiba Si-N 2SC2712-O SOT-23 10

LO Toshiba Si-N 2SC4116-O SOT-323 2 10

LO Valvo P-FET BSR174 SOT-23 10

LO Siemens Si-N BF775 SOT-23 10 BF747

LOs Siemens Si-N BF775W SOT-323 2 10

LP Fagor Z-Di P6SMB-27A DO-214AA 5 19

LP NEC Si-N HD1A3M SOT-89 11

LP Philips P-FET BSR175 SOT-23 10

LP Thomson Z-Di SM6T10CA SOD-6 6×4 19

LP Valvo P-FET BSR175 SOT-23 10

LQ Fagor Z-Di P6SMB-30 DO-214AA 5 19

LQ Matsushita Si-N 2SD1821A-Q SOT-323 2 10

LQ Matsushita Si-N 2SD2240A-Q SS Mini 1,6 10

LQ Matsushita Si-N 2SD814A-Q SOT-23 10

LQ NEC Si-N HD1F3P SOT-89 11

LQ Philips P-FET BSR176 SOT-23 10

LQ Valvo P-FET BSR176 SOT-23 10

LR Fagor Z-Di P6SMB-30A DO-214AA 5 19

LR Matsushita Si-N 2SD1821A-R SOT-323 2 10

LR Matsushita Si-N 2SD2240A-R SS Mini 1,6 10

LR Matsushita Si-N 2SD814A-R SOT-23 10

LR NEC Si-N HD1L3N SOT-89 11

LR Philips P-FET BSR177 SOT-23 10

LR Rohm Si-N 2SC2412KLN-R SOT-23 10

LR Rohm Si-N 2SC2412L-LR (MMT) ~10

LR Valvo P-FET BSR177 SOT-23 10

LR Siemens Si-N BF517 SOT-23 10 2SC3098

LS Fagor Z-Di P6SMB-33 DO-214AA 5 19

LS Matsushita Si-N 2SD1821A-S SOT-323 2 10

LS Matsushita Si-N 2SD2240A-S SS Mini 1,6 10

LN5 … LS

http://www.serwis-elektroniki.com.pl/

Page 148:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

LS Matsushita Si-N 2SD814A-S SOT-23 10

LS NEC Si-N HD1A4M SOT-89 11

LS Rohm Si-N 2SC2412KLN-S SOT-23 10

LS Rohm Si-N 2SC2412L-LS (MMT) ~10

LS Sanyo Si-P 2SA1838 SOT-323 2 10

LS Sanyo Si-P 2SA1839 SOT-23 10

LS Siemens Si-N BF770A SOT-23 10 2SC3513

LT Fagor Z-Di P6SMB-33A DO-214AA 5 19

LT Matsushita Si-N 2SD1821A-T SOT-323 2 10

LT Matsushita Si-N 2SD2240A-T SS Mini 1,6 10

LT Matsushita Si-N 2SD814A-T SOT-23 10

LT NEC Si-N HD1L2Q SOT-89 11

LT Sanyo Si-N 2SD2028 SOT-23 10

LU Fagor Z-Di P6SMB-36 DO-214AA 5 19

LU NEC Si-N HD1F2Q SOT-89 11

LV Fagor Z-Di P6SMB-36A DO-214AA 5 19

LV Sanyo PIN-Di 1SV265 SOT-153 14

LW Fagor Z-Di P6SMB-39 DO-214AA 5 19

LW Thomson Z-Di SM6T15C SOD-6 6×4 19

LX Fagor Z-Di P6SMB-39A DO-214AA 5 19

LX NEC Si-N HD1A4A SOT-89 11

LX Thomson Z-Di SM6T15CA SOD-6 6×4 19

LY Fagor Z-Di P6SMB-43 DO-214AA 5 19

LY KEC Si-N KTC4075-Y SOT-323 2 10

LY Sanyo Si-N 2SC3772 SOT-23 10

LY Sanyo Si-N 2SC4003 SOT-23 10

LY Toshiba Si-N 2SC2712-Y SOT-23 10

LY Toshiba Si-N 2SC4116-Y SOT-323 2 10

LY Toshiba Si-N 2SC4207-Y SOT-153 14

LY Toshiba Si-N 2SC4738-Y SS Mini 1,6 10

LY Toshiba Si-N 2SC4944-Y SOT-353 2 14

LZ Fagor Z-Di P6SMB-43A DO-214AA 5 19

M

M Matsushita GaAs-N-FET 2SK1962 SOT-173 17

LS … M

http://www.serwis-elektroniki.com.pl/

Page 149:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M Matsushita GaAs-N-FET 2SK690 SOT-89 11

M Sanyo Si-P 2SA1622 SOT-323 2 10

M Siemens PIN-Di BAR64-02W (SCD-80) 1,3 19

M Siemens PIN-Di BAR65-07 SOT-143 13

M.B Matsushita Si-Di MA1U152A ~SOT-23 10

M.I Matsushita Si-Di MA1U152K ~SOT-23 10

M.O Matsushita Si-Di MA1U152WA ~SOT-23 10

M.S Matsushita Si-Di MA1U157A ~SOT-23 10

M.U Matsushita Si-Di MA1U152WK ~SOT-23 10

M03 Thomson MOS-N-FET-e BSS83 SOT-143 13

M06 Thomson MOS-N-FET SO961 SOT-143 13

M08 Philips N-FET PMBFJ308 SOT-23 10

M09 Philips N-FET PMBFJ309 SOT-23 10

M1 General Si-N D70F2T1 SOT-89 11

M1 Siemens GaAs-FET-IC CMY200 (MW-6) ~15

M1 Toshiba Si-N 2SC5066-O SS Mini 1,6 10

M1 Motorola N-FET BFR30 SOT-23 10 BFW11

M1 Philips N-FET BFR30 SOT-23 10 BFW11

M1 Thomson N-FET BFR30 SOT-23 10

M10 Philips N-FET PMBFJ310 SOT-23 10

M11 Mitsubishi Si-Di MC911 (TO-92S) 12

M15 NEC Si-P 2SA1411-M15 SOT-23 10

M15 NEC Si-P 2SA1613-M15 SOT-323 2 10

M16 NEC Si-P 2SA1411-M16 SOT-23 10

M16 NEC Si-P 2SA1613-M16 SOT-323 2 10

M16 Philips N-FET PMBF4416A SOT-23 10

M18 Philips MOS-N-FET-e BSN22 SOT-23 10

M1A Matsushita Si-Di MA159 SOT-143 13

M1B Matsushita Si-Di MA159A SOT-143 13

M1B Matsushita Si-Di MA4S159 SOT-343 2 13

M1B Motorola Si-N MMBT2222 SOT-23 10

M1C Matsushita Si-Di MA158 SOT-23 10

M1D Matsushita Si-Di MA160 SOT-143 13

M1E Matsushita Si-Di MA160A SOT-143 13

M1E Motorola Si-N MMBTA43 SOT-23 10

M … M1E

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M1F Matsushita Si-Di MA194 SOT-143 13

M1F Motorola Si-N MMBT5550 SOT-23 10

M1G Toshiba Si-P HN2A01FU-GR SOT-363 2 15

M1I Matsushita C-Di MA862 SOT-143 13

M1J Motorola Si-N MMBT2369 SOT-23 10

M1K Matsushita Si-Di MA704 SOT-23 10

M1L Matsushita Si-Di MA704A SOT-23 10

M1L Matsushita Si-Di MA741 SOT-323 2 10

M1L Matsushita Si-Di MA781 SS Mini 1,6 10

M1M Matsushita Si-Di MA721 SOT-23 10

M1M Matsushita Si-Di MA744 SOT-323 2 10

M1N Matsushita Si-Di MA4S713 ~SOT-343 2 13

M1N Matsushita Si-Di MA713 SOT-143 13

M1O Matsushita Si-Di MA726 SOT-143 13

M1P Matsushita Si-Di MA714 SOT-143 13

M1S Matsushita C-Di MA348 SOT-143 13

M1T Matsushita Si-Di MA724 SOT-143 13

M1U Matsushita Si-Di MA716 SOT-23 10

M1U Matsushita Si-Di MA742 SOT-323 2 10

M1X Matsushita C-Di MA75WA SOT-23 10

M1X Matsushita C-Di MA80WA SOT-323 2 10

M1Y Matsushita C-Di MA75WK SOT-23 10

M1Y Matsushita Si-Di MA80WK SOT-323 2 10

M1Y Toshiba Si-P HN2A01FU-Y SOT-363 2 15

M1Z Matsushita Si-Di MA727 SOT-23 10

M2 Siemens GaAs-FET-IC CMY91 (MW-6) ~15

M2 Toshiba Si-N 2SC5066-Y SS Mini 1,6 10

M2 Motorola N-FET BFR31 SOT-23 10 BFW12

M2 Philips N-FET BFR31 SOT-23 10 BFW12

M2 Thomson N-FET BFR31 SOT-23 10

M20 Philips N-FET BFR200 SOT-143 13

M21 Mitsubishi Si-Di MC921 (TO-92S) 12

M26 Philips MOS-N-FET-e BF908 SOT-143 13

M27 Philips MOS-N-FET-e BF908R SOT-143R 13

M28 Philips MOS-N-FET-e BF909 SOT-143 13

M1F … M28

http://www.serwis-elektroniki.com.pl/

Page 151:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M29 Philips MOS-N-FET-e BF909R SOT-143R 13

M2A Matsushita Si-Di MA122 SOT-163 15

M2B Matsushita Si-Di MA123 SOT-163 15

M2B Motorola Si-P MMBT2907 SOT-23 10

M2C Matsushita Si-Di MA124 SOT-163 15

M2C Motorola Si-P MMBTA70 SOT-23 10

M2D Matsushita Si-Di MA121 SOT-163 15

M2D Matsushita Si-Di MA1S121 SOT-163 15

M2D Matsushita Si-Di MA6S121 ~SOT-363 2 15

M2E Matsushita Si-Di MA164 SOT-23 10

M2F Matsushita Si-Di MA198 SOT-23 10

M2H Matsushita PIN-Di MA555 SOT-23 10

M2I Matsushita Si-Di MA125 SOT-163 15

M2K Matsushita C-Di MA351 SOT-163 15

M2L Matsushita C-Di MA78 SOT-163 15

M2M Matsushita Si-Di MA717 SOT-23 10

M2M Matsushita Si-Di MA745 SOT-323 2 10

M2M Matsushita Si-Di MA795 SS Mini 1,6 10

M2N Matsushita Si-Di MA6S718 SOT-363 2 15

M2N Matsushita Si-Di MA718 SOT-163 15

M2P Matsushita Si-Di MA704WA SOT-23 10

M2P Matsushita Si-Di MA741WA SOT-323 2 10

M2Q Matsushita Si-Di MA174 SOT-143 13

M2R Matsushita Si-Di MA704WK SOT-23 10

M2R Matsushita Si-Di MA741WK SOT-323 2 10

M2S Matsushita Si-Di MA126 SOT-163 15

M2T Matsushita PIN-Di MA556 SOT-163 15

M2U Matsushita Si-Di MA127 SOT-163 15

M2V Matsushita Si-Di MA128 SOT-163 15

M2W Matsushita Si-Di MA10700 ~SOT-323 2 10

M2W Matsushita Si-Di MA720 SOT-23 10

M2W Matsushita Si-Di MA744 SOT-323 2 10

M2X Matsushita Si-Di MA730 SOT-23 10

M2Y Matsushita Si-Di MA715 SOT-23 10

M2Z Matsushita Si-Di MA193 SOT-143 13

M29 … M2Z

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M3 Ferranti MOS-FET BFR46 TO-18

M3 KEC PIN-Di KDV173 SOT-23 10

M3 Motorola N-FET BFT46 SOT-23 10

M3 NEC Si-P 2SA812-M3 SOT-23 10

M3 Philips N-FET BFT46 SOT-23 10 BFW13

M3 Samsung Si-P KST812M3 SOT-23 10

M3 Samsung Si-P MMBA812M3 SOT-23 10

M3 Siemens GaAs-FET-IC CMY210 (MW-6) ~15

M3 Thomson N-FET BFT46 SOT-23 10

M3 Valvo N-FET BFT46 SOT-23 10

M30 Matsushita PIN-Di MA557 SOT-23 10

M30 NEC Si-P FN1L4L SOT-23 10

M30 NEC Si-P GN1L4L SOT-323 2 10

M31 Mitsubishi Si-Di MC931 (TO-92S) 12

M31 NEC Si-P FN1L4M SOT-23 10

M31 NEC Si-P GN1L4M SOT-323 2 10

M31 Philips MOS-FET BSD20 SOT-143 13

M31 Valvo MOS-N-FET-d BSD20 SOT-143 13

M32 Mitsubishi Si-Di MC932 (TO-92S) 12

M32 NEC Si-P FN1F4M SOT-23 10

M32 NEC Si-P GN1F4F SOT-323 2 10

M32 Philips MOS-N-FET-d BSD22 SOT-143 13

M32 Valvo MOS-N-FET-d BSD22 SOT-143 13

M33 NEC Si-P FN1A4M SOT-23 10

M33 NEC Si-P GN1A4M SOT-323 2 10

M33 Philips N-FET BF861A SOT-23 10

M34 NEC Si-P FN1A4P SOT-23 10

M34 NEC Si-P GN1A4P SOT-323 2 10

M34 Philips N-FET BF861B SOT-23 10

M35 NEC Si-P FN1F4N SOT-23 10

M35 NEC Si-P GN1F4N SOT-323 2 10

M35 Philips N-FET BF861C SOT-23 10

M36 NEC Si-P FN1L3Z-Q SOT-23 10

M36 NEC Si-P GN1L3Z-Q SOT-323 2 10

M37 NEC Si-P FN1L3Z-P SOT-23 10

M3 … M37

http://www.serwis-elektroniki.com.pl/

Page 153:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M37 NEC Si-P GN1L3Z-P SOT-323 2 10

M38 NEC Si-P FN1L3Z-K SOT-23 10

M38 NEC Si-P GN1L3Z-K SOT-323 2 10

M3A Matsushita Si-Di MA199 SOT-23 10

M3A Motorola Si-N MMBTH24 SOT-23 10

M3B Motorola Si-N MMBT918 SOT-23 10

M3C Matsushita Si-Di MA740 SOT-23 10

M3D Matsushita Si-Di MA717WK SOT-23 10

M3D Matsushita Si-Di MA745WK SOT-323 2 10

M3D Matsushita Si-Di MA795WK SS Mini 1,6 10

M3E Matsushita Si-Di MA717WA SOT-23 10

M3E Matsushita Si-Di MA745WA SOT-323 2 10

M3F Matsushita Si-Di MA721WK SOT-23 10

M3H Matsushita Si-Di MA721WA SOT-23 10

M3I Matsushita Si-Di MA743 SOT-143 13

M3J Motorola Si-P MMBTH69 SOT-23 10

M3K Matsushita Si-Di MA999 SOT-143 13

M3M Matsushita Si-Di MA746 SOT-143 13

M3S Matsushita Si-Di MA57 SOT-23 10

M3S Matsushita Si-Di MA70 SOT-323 2 10

M3T Matsushita Si-Di MA786 SOT-23 10

M3T Matsushita Si-Di MA792 SOT-323 2 10

M3U Matsushita Si-Di MA787 SOT-23 10

M3V Matsushita Si-Di MA788 SOT-23 10

M3W Matsushita Si-Di MA789 SOT-23 10

M3X Matsushita Si-Di MA790 SOT-23 10

M3Y Matsushita Si-Di MA786WA SOT-23 10

M3Y Matsushita Si-Di MA792WA SOT-323 2 10

M3Z Matsushita Si-Di MA786WK SOT-23 10

M3Z Matsushita Si-Di MA792WK SOT-323 2 10

M4 National N-FET BSR56 SOT-23 10 2N4856

M4 NEC Si-P 2SA1611-M4 SOT-323 2 10

M4 NEC Si-P 2SA1836-M4 SS Mini 1,6 10

M4 NEC Si-P 2SA812-M4 SOT-23 10

M4 Samsung Si-P KST812M4 SOT-23 10

M37 … M4

http://www.serwis-elektroniki.com.pl/

Page 154:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M4 Samsung Si-P MMBA812M4 SOT-23 10

M4 Sanyo Si-P 2SA1179-M4 SOT-23 10

M4 Philips N-FET BSR56 SOT-23 10 2N4856

M4 Thomson N-FET BSR56 SOT-23 10 2N4856

M41 Philips N-FET BSR111 SOT-23 10

M42 Philips N-FET BSR112 SOT-23 10

M4206N Zetex MOS-N-FET-e ZDM4206N MDIP-8 23

M43 Philips N-FET BSR113 SOT-23 10

M4306N Zetex MOS-N-FET-e ZDM4306N MDIP-8 23

M4A Matsushita Si-Di MA791 SOT-23 10

M4A Matsushita Si-Di MA793 SOT-323 2 10

M4A Motorola C-Di MMBV109 SOT-23 10

M4B Matsushita Si-Di MA796 SOT-143 13

M4B Motorola C-Di MMBV432 SOT-23 10

M4C Matsushita PIN-Di MA558 SOT-23 10

M4C Motorola C-Di MMBV3102 SOT-23 10

M4D Matsushita Si-Di MA200WK SOT-23 10

M4E Matsushita Si-Di MA748 SOT-23 10

M4E Motorola C-Di MMBV105G SOT-23 10

M4F Matsushita Si-Di MA129 SOT-163 15

M4F Motorola Si-Di MMBD353 SOT-23 10

M4G Motorola C-Di MMBV2101 SOT-23 10

M4H Matsushita Z-Di MA950 SOT-163 15

M4L Matsushita Si-Di MA200A SOT-23 10

M4M Matsushita Si-Di MA200K SOT-23 10

M4N Matsushita Si-Di MA200WA SOT-23 10

M4P Matsushita Si-Di MA10701 SOT-23 10

M4R Matsushita Si-Di MA10702 ~SOT-323 2 10

M4R Matsushita Si-Di MA10703 SOT-23 10

M4s Siemens GaAs-FET-IC CMY211 (MW-6) ~15

M5 National N-FET BSR57 SOT-23 10 2N4857

M5 NEC Si-P 2SA1611-M5 SOT-323 2 10

M5 NEC Si-P 2SA1836-M5 SS Mini 1,6 10

M5 NEC Si-P 2SA812-M5 SOT-23 10

M5 Samsung Si-P KST812M5 SOT-23 10

M4 … M5

http://www.serwis-elektroniki.com.pl/

Page 155:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M5 Samsung Si-P MMBA812M5 SOT-23 10

M5 Sanyo Si-P 2SA1179-M5 SOT-23 10

M5 Toshiba Si-N 2SC5086-O SS Mini 1,6 10

M5 Philips N-FET BSR57 SOT-23 10 2N4857

M5 Thomson N-FET BSR57 SOT-23 10 2N4857

M50 Philips MOS-N-FET BF990AR SOT-143 13

M505 Thomson MOS-N-FET SO960 SOT-143 13

M52 Philips MOS-N-FET BF992R SOT-143 13

M53 Philips MOS-N-FET BF994SR SOT-143 13

M56 Philips MOS-N-FET-e BF1100 SOT-143 13

M57 Philips MOS-N-FET-e BF1100R SOT-143R 13

M5C Motorola Si-Di MMBD7000 SOT-23 10

M5G Motorola Si-Di MMBD352 SOT-23 10

M5M Matsushita Si-Di MA3X200F SOT-23 10

M6 Ferranti Si-N BSS66 SOT-23 10

M6 National N-FET BSR58 SOT-23 10 2N4858

M6 NEC Si-P 2SA1611-M6 SOT-323 2 10

M6 NEC Si-P 2SA1836-M6 SS Mini 1,6 10

M6 NEC Si-P 2SA812-M6 SOT-23 10

M6 Samsung Si-P KST812M6 SOT-23 10

M6 Samsung Si-P MMBA812M6 SOT-23 10

M6 Sanyo Si-P 2SA1179-M6 SOT-23 10

M6 Toshiba Si-N 2SC5086-Y SS Mini 1,6 10

M6 Philips N-FET BSR58 SOT-23 10 2N4858

M6 Thomson N-FET BSR58 SOT-23 10 2N4858

M61 NEC Si-P FN1L4Z-Q SOT-23 10

M61 NEC Si-P GN1L4Z-Q SOT-323 2 10

M62 NEC Si-P FN1L4Z-P SOT-23 10

M62 NEC Si-P GN1L4Z-P SOT-323 2 10

M62 Philips N-FET PMBF4391 SOT-23 10 BSR56

M62 Valvo N-FET PMBF4391 SOT-23 10

M63 NEC Si-P FN1L4Z-K SOT-23 10

M63 NEC Si-P GN1L4Z-K SOT-323 2 10

M63 Philips N-FET PMBF4392 SOT-23 10 BSR57

M63 Valvo N-FET PMBF4392 SOT-23 10

M5 … M63

http://www.serwis-elektroniki.com.pl/

Page 156:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M64 NEC Si-P FN1F4Z-Q SOT-23 10

M64 NEC Si-P GN1F4Z-Q SOT-323 2 10

M64 Philips N-FET PMBF4393 SOT-23 10 BSR58

M64 Valvo N-FET PMBF4393 SOT-23 10

M65 NEC Si-P FN1F4Z-P SOT-23 10

M65 NEC Si-P GN1F4Z-P SOT-323 2 10

M65 Philips N-FET BF545A SOT-23 10

M66 NEC Si-P FN1F4Z-K SOT-23 10

M66 NEC Si-P GN1F4Z-K SOT-323 2 10

M66 Philips N-FET BF545B SOT-23 10

M67 NEC Si-P FN1A4Z-Q SOT-23 10

M67 NEC Si-P GN1A4Z-Q SOT-323 2 10

M67 Philips N-FET BF545C SOT-23 10

M68 NEC Si-P FN1A4Z-P SOT-23 10

M68 NEC Si-P GN1A4Z-P SOT-323 2 10

M69 NEC Si-P FN1A4Z-K SOT-23 10

M69 NEC Si-P GN1A4Z-K SOT-323 2 10

M6A Motorola N-FET MMBF4416 SOT-23 10

M6F Motorola N-FET MMBF4860 SOT-23 10

M6H Motorola Si-Di MMBD354 SOT-23 10

M7 Ferranti Si-N BSS67 SOT-23 10

M7 NEC Si-P 2SA1611-M7 SOT-323 2 10

M7 NEC Si-P 2SA1836-M7 SS Mini 1,6 10

M7 NEC Si-P 2SA812-M7 SOT-23 10

M7 Samsung Si-P KST812M7 SOT-23 10

M7 Samsung Si-P MMBA812M7 SOT-23 10

M7 Sanyo Si-P 2SA1179-M7 SOT-23 10

M7 Toshiba Si-N 2SC5091-O SS Mini 1,6 10

M74 Philips MOS-N-FET-e BSS83 SOT-143 13

M74 Thomson MOS-N-FET-e BSS83 SOT-143 13

M74 Valvo MOS-N-FET-e BSS83 SOT-143 13

M8 Ferranti Si-N BSS66R SOT-23 10

M8 Toshiba Si-N 2SC5091-Y SS Mini 1,6 10

M81 NEC Si-P FN1L3M SOT-23 10

M81 NEC Si-P GN1L3M SOT-323 2 10

M64 … M81

http://www.serwis-elektroniki.com.pl/

Page 157:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 148 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M82 NEC Si-P FN1L3N SOT-23 10

M82 NEC Si-P GN1L3N SOT-323 2 10

M83 NEC Si-P FN1A3Q SOT-23 10

M83 NEC Si-P GN1A3Q SOT-323 2 10

M83 Philips MOS-N-FET BF997 SOT-143 13

M84 Philips N-FET BF556A SOT-23 10

M85 Philips N-FET BF556B SOT-23 10

M85 Philips MOS-N-FET-d BF990AR SOT-143R 13

M86 Philips N-FET BF556C SOT-23 10

M86 Philips MOS-N-FET BF990A SOT-143 13

M87 Philips MOS-N-FET BF990A SOT-143 13 BF980

M89 AEG MOS-N-FET-d BF989 SOT-143 13 BF960

M89 Philips MOS-N-FET-d BF989 SOT-143 13 BF960

M89 Siemens MOS-N-FET-d BF989 SOT-143 13 BF960

M89 Valvo MOS-N-FET-d BF989 SOT-143 13

M8p Philips MOS-N-FET-e BSN20 SOT-23 10 BSS138

M8t Philips MOS-N-FET-e BSN20W SOT-323 2 10

M9 Ferranti Si-N BSS67R SOT-23 10

M9 Toshiba Si-N 2SC5096-R SS Mini 1,6 10

M90 Philips MOS-N-FET-d BF990 SOT-143 13 BF980

M90 Valvo MOS-N-FET-d BF990 SOT-143 13

M91 Philips MOS-N-FET-d BF991 SOT-143 13 BF981

M91 Valvo MOS-N-FET-d BF991 SOT-143 13

M92 Philips MOS-N-FET-d BF992 SOT-143 13 BF982

M92 Valvo MOS-N-FET-d BF992 SOT-143 13

M93 AEG MOS-FET BF994S SOT-143 13 BF964S

M93 Siemens MOS-FET BF994S SOT-143 13 BF964S

M93 Valvo MOS-N-FET-d BF994S SOT-143 13

M94 AEG MOS-N-FET-d BF994 SOT-143 13 BF964

M94 Philips MOS-N-FET-d BF994 SOT-143 13

M94 Siemens MOS-FET BF994 SOT-143 13 BF964

M94 Valvo MOS-N-FET-d BF994 SOT-143 13

M95 AEG MOS-N-FET-d BF996S SOT-143 13 BF966S

M95 Philips MOS-N-FET-d BF996S SOT-143 13

M95 Philips MOS-N-FET BF996SR SOT-143 13

M82 … M95

http://www.serwis-elektroniki.com.pl/

Page 158:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

M95 Siemens MOS-FET BF996S SOT-143 13 BF966S

M95 Valvo MOS-N-FET-d BF996S SOT-143 13

M96 AEG MOS-N-FET-d BF996 SOT-143 13 BF966

M96 Philips MOS-N-FET-d BF996 SOT-143 13

M96 Siemens MOS-FET BF996 SOT-143 13 BF966

M96 Valvo MOS-N-FET-d BF996 SOT-143 13

M97 Philips N-FET BFR101 SOT-143 13 BF256A

M97 Valvo N-FET BFR101A SOT-143 13

M98 Philips N-FET BFR101B SOT-143 13

M98 Valvo N-FET BFR101B SOT-143 13

MA AEG MOS-N-FET-d BF989 SOT-143 13 BF960

MA Matsushita Si-Di MA141A SOT-323 2 10

MA Matsushita Si-Di MA151A SOT-23 10

MA Mitsubishi Z-IC M5278L05M SOT-89 11

MA NEC MOS-N-FET-e µPA672T SOT-363 2 15

MA Sanyo Si-N 2SC5536 (SSFP) 1,4 10

MA Siemens Si-N BFS17 SOT-23 10

MA Toshiba Si-N 2SC2876 SOT-103 7

MA Toshiba Si-N 2SC3011 SOT-23 10

MA Toshiba Si-N 2SC3301 SOT-89 11

MA Toshiba Si-N 2SC4392 SOT-323 2 10

MA Toshiba Si-N 2SC5096-O SS Mini 1,6 10

MA Zetex Si-N FMMTA06R SOT-23 10

MA Philips MOS-N-FET-d BF989 SOT-143 13 BF960

MA Siemens MOS-N-FET-d BF989 SOT-143 13 BF960

MA6 Motorola Si-Di MMBD2838 SOT-23 10

MAO Toshiba Si-N 2SC5064-O SOT-23 10

MAO Toshiba Si-N 2SC5065-O SOT-323 2 10

MAX KEC Si-N KTD1304 SOT-23 10

MAY Toshiba Si-N 2SC5064-Y SOT-23 10

MAY Toshiba Si-N 2SC5065-Y SOT-323 2 10

MB AEG MOS-N-FET BF995 SOT-143 13 BF991

MB Hitachi Si-P 2SA1052-B SOT-23 10

MB Matsushita Si-Di MA132A SS Mini 1,6 10

MB Matsushita Si-Di MA142A SOT-323 2 10

M95 … MB

http://www.serwis-elektroniki.com.pl/

Page 159:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 150 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

MB Matsushita Si-Di MA152A SOT-23 10

MB Mitsubishi Z-IC M5278L56M SOT-89 11

MB Siemens MOS-N-FET BF995 SOT-143 13 BF991

MB Toshiba Si-N 2SC3098 SOT-23 10

MB Toshiba Si-N 2SC5108-O SS Mini 1,6 10

MB Zetex Si-P FMMTA56 SOT-23 10

MC Europa Si-N BFS17P SOT-23 10

MC Hitachi Si-P 2SA1052-C SOT-23 10

MC Matsushita Si-Di MA143 SOT-323 2 10

MC Matsushita Si-Di MA153 SOT-23 10

MC Philips MOS-N-FET-e BF904WR SOT-343 13

MC Siemens MOS-N-FET-d BF994 SOT-143 13

MC Toshiba Si-N 2SC3090 SOT-23 10

MC Toshiba Si-N 2SC5108-Y SS Mini 1,6 10

MC Zetex MOS-N-FET-e ZVN3306F SOT-23 10

MC Siemens Si-N BFS17P SOT-23 10

MCO Toshiba Si-N 2SC5084-O SOT-23 10

MCO Toshiba Si-N 2SC5085-O SOT-323 2 10

MCO Toshiba Si-N 2SC5088-O SOT-343 2 13

MCs Europa Si-N BFS17W SOT-323 10

MCs Siemens Si-N BFS17S SOT-363 2 15

MCs Siemens Si-N BFS17W SOT-323 2 10

MCY Toshiba Si-N 2SC5084-Y SOT-23 10

MCY Toshiba Si-N 2SC5085-Y SOT-323 2 10

MCY Toshiba Si-N 2SC5088-Y SOT-343 2 13

MD AEG MOS-N-FET-d BF996 SOT-143 13 BF966

MD Fagor Z-Di P6SMB-47 DO-214AA 5 19

MD Hitachi Si-P 2SA1052-D SOT-23 10

MD Matsushita Si-St MA28-A SOT-23 10

MD Mitsubishi Z-IC M5278L08M SOT-89 11

MD Philips MOS-N-FET-e BF908WR SOT-343 13

MD Siemens MOS-N-FET-d BF996 SOT-143 13 BF966

MD Thomson Z-Di SM6T18C SOD-6 6×4 19

MD Toshiba Si-P 2SA1245 SOT-23 10

MD Toshiba Si-N 2SC5111-O SS Mini 1,6 10

MB … MD

http://www.serwis-elektroniki.com.pl/

Page 160:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

MD1 NEC Si-P FN3L4Z SOT-23 10

MDD Thomson Z-Di SM15T6V8 SOD-15 8×5 19

MDE Thomson Z-Di SM15T6V8A SOD-15 8×5 19

MDF Thomson Z-Di SM15T7V5 SOD-15 8×5 19

MDG Thomson Z-Di SM15T7V5A SOD-15 8×5 19

MDN Thomson Z-Di SM15T10 SOD-15 8×5 19

MDO Toshiba Si-N 2SC5089-O SOT-23 10

MDO Toshiba Si-N 2SC5090-O SOT-323 2 10

MDO Toshiba Si-N 2SC5093-O SOT-343 2 13

MDP Thomson Z-Di SM15T10A SOD-15 8×5 19

MDR Toshiba Si-N 2SC5089-R SOT-23 10

MDR Toshiba Si-N 2SC5090-R SOT-323 2 10

MDR Toshiba Si-N 2SC5093-R SOT-343 2 13

MDS Thomson Z-Di SM15T12 SOD-15 8×5 19

MDT Thomson Z-Di SM15T12A SOD-15 8×5 19

MDW Thomson Z-Di SM15T15 SOD-15 8×5 19

MDX Thomson Z-Di SM15T15A SOD-15 8×5 19

ME AEG MOS-N-FET BF993 SOT-143 13 BF994

ME Fagor Z-Di P6SMB-47A DO-214AA 5 19

ME Matsushita Si-St MA28-B SOT-23 10

ME Mitsubishi Si-P 2SA1235-E SOT-23 10

ME Mitsubishi Si-P 2SA1602-E SOT-323 2 10

ME Mitsubishi Z-IC M5278L09M SOT-89 11

ME Philips MOS-N-FET-e BF909WR SOT-343 13

ME Siemens MOS-N-FET BF993 SOT-143 13 BF994

ME Thomson Z-Di SM6T18CA SOD-6 6×4 19

ME Toshiba Si-N 2SC3268 SOT-89 11

ME Toshiba Si-N 2SC3302 SOT-103 7

ME Toshiba Si-N 2SC3429 SOT-23 10

ME Toshiba Si-N 2SC4393 SOT-323 2 10

ME Toshiba Si-N 2SC5111-Y SS Mini 1,6 10

MED Thomson Z-Di SM15T18 SOD-15 8×5 19

MEE Thomson Z-Di SM15T18A SOD-15 8×5 19

MEH Thomson Z-Di SM15T22 SOD-15 8×5 19

MEK Thomson Z-Di SM15T22A SOD-15 8×5 19

MD1 … MEK

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

MEL Thomson Z-Di SM15T24 SOD-15 8×5 19

MEM Thomson Z-Di SM15T24A SOD-15 8×5 19

MEN Thomson Z-Di SM15T27 SOD-15 8×5 19

MEO Toshiba Si-N 2SC5094-O SOT-23 10

MEO Toshiba Si-N 2SC5095-O SOT-323 2 10

MEO Toshiba Si-N 2SC5098-O SOT-343 2 13

MEP Thomson Z-Di SM15T27A SOD-15 8×5 19

MEQ Thomson Z-Di SM15T30 SOD-15 8×5 19

MER Thomson Z-Di SM15T30A SOD-15 8×5 19

MER Toshiba Si-N 2SC5094-R SOT-23 10

MER Toshiba Si-N 2SC5095-R SOT-323 2 10

MER Toshiba Si-N 2SC5098-R SOT-343 2 13

MES Thomson Z-Di SM15T33 SOD-15 8×5 19

MET Thomson Z-Di SM15T33A SOD-15 8×5 19

MEU Thomson Z-Di SM15T36 SOD-15 8×5 19

MEV Thomson Z-Di SM15T36A SOD-15 8×5 19

MEW Thomson Z-Di SM15T39 SOD-15 8×5 19

MEX Thomson Z-Di SM15T39A SOD-15 8×5 19

MF Fagor Z-Di P6SMB-51 DO-214AA 5 19

MF Matsushita Si-St MA28W-A SOT-23 10

MF Mitsubishi Si-P 2SA1235-F SOT-23 10

MF Mitsubishi Si-P 2SA1602-F SOT-323 2 10

MF Mitsubishi Z-IC M5278L10M SOT-89 11

MF Philips MOS-N-FET-e BF1100WR SOT-343 13

MF Siemens MOS-N-FET-d BF989S SOT-143 13

MF Toshiba Si-N 2SC3445 SOT-23 10

MF Zetex MOS-N-FET-e ZVN3310F SOT-23 10

MFN Thomson Z-Di SM15T68 SOD-15 8×5 19

MFO Toshiba Si-N 2SC5106-O SOT-23 10

MFO Toshiba Si-N 2SC5107-O SOT-323 2 10

MFP Thomson Z-Di SM15T68A SOD-15 8×5 19

MFW Thomson Z-Di SM15T100 SOD-15 8×5 19

MFX Thomson Z-Di SM15T100A SOD-15 8×5 19

MFY Toshiba Si-N 2SC5106-Y SOT-23 10

MFY Toshiba Si-N 2SC5107-Y SOT-323 2 10

MEL … MFY

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Page 162:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

MG AEG MOS-N-FET-d BF994S SOT-143 13 BF964S

MG Fagor Z-Di P6SMB-51A DO-214AA 5 19

MG Mitsubishi Si-P 2SA1235-G SOT-23 10

MG Mitsubishi Si-P 2SA1602-G SOT-323 2 10

MG Mitsubishi Z-IC M5278L12M SOT-89 11

MG Philips MOS-N-FET-d BF994S SOT-143 13

MG Siemens MOS-N-FET-d BF994S SOT-143 13 BF964S

MGH Thomson Z-Di SM15T150 SOD-15 8×5 19

MGK Thomson Z-Di SM15T150A SOD-15 8×5 19

MGO Toshiba Si-N 2SC5109-O SOT-23 10

MGO Toshiba Si-N 2SC5110-O SOT-323 2 10

MGU Thomson Z-Di SM15T200 SOD-15 8×5 19

MGV Thomson Z-Di SM15T200A SOD-15 8×5 19

MGW Thomson Z-Di SM15T220 SOD-15 8×5 19

MGX Thomson Z-Di SM15T220A SOD-15 8×5 19

MGY Toshiba Si-N 2SC5109-Y SOT-23 10

MGY Toshiba Si-N 2SC5110-Y SOT-323 2 10

MH AEG MOS-N-FET-d BF996S SOT-143 13 BF966S

MH Fagor Z-Di P6SMB-56 DO-214AA 5 19

MH Matsushita Si-Di MA141K SOT-323 2 10

MH Matsushita Si-Di MA151K SOT-23 10

MH Mitsubishi Z-IC M5278L15M SOT-89 11

MH Thomson Z-Di SM6T22C SOD-15 6×4 19

MH Toshiba Si-N 2SC3606 SOT-23 10

MH Toshiba Si-N 2SC3607 SOT-89 11

MH Toshiba Si-N 2SC3608 SOT-103 7

MH Toshiba Si-N 2SC3609 SOT-143 13

MH Toshiba Si-N 2SC4394 SOT-323 2 10

MH Toshiba Si-N 2SC4839 SS Mini 1,6 10

MH Philips MOS-N-FET-d BF996S SOT-143 13

MH Siemens MOS-N-FET-d BF996S SOT-143 13 BF966S

MI Matsushita Si-Di MA132K SS Mini 1,6 10

MI Matsushita Si-Di MA142K SOT-323 2 10

MI Matsushita Si-Di MA152K SOT-23 10

MI Toshiba Si-N 2SC3745 SOT-143 13

MG … MI

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Page 163:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

MI- Hitachi Si-N 2SC4126 SOT-143 13

MJ Sanyo MOS-N-FET-e 2SK1849 SOT-23 10

MK AEG MOS-N-FET-d BF997 SOT-143 13 BF965

MK Fagor Z-Di P6SMB56A DO-214AA 5 19

MK Matsushita Si-St MA28W-B SOT-23 10

MK NEC Si-P 2SB799-MK SOT-89 11

MK Philips MOS-N-FET-d BF997 SOT-143 13

MK Siemens MOS-N-FET-d BF997 SOT-143 13 BF965

MK Thomson Z-Di SM6T22CA SOD-6 6×4 19

MK Toshiba Si-N 2SC4315 SOT-143 13

MK Toshiba Si-N 2SC4842 SOT-343 2 13

ML Fagor Z-Di P6SMB-62 DO-214AA 5 19

ML Matsushita Si-St MA28T-A SOT-23 10

ML NEC Si-P 2SB799-ML SOT-89 11

ML Sanyo Si-P 2SA1519 SOT-23 10

ML Thomson Z-Di SM6T24C SOD-6 6×4 19

ML Zetex MOS-P-FET-e ZVP3306F SOT-23 10

Mls Siemens MOS-FET BF930 SOT-143 13

MM Fagor Z-Di P6SMB-62A DO-214AA 5 19

MM Matsushita Si-St MA28T-B SOT-23 10

MM NEC Si-P 2SB799-MM SOT-89 11

MM Thomson Z-Di SM6T24CA SOD-6 6×4 19

MN Fagor Z-Di P6SMB-68 DO-214AA 5 19

MN Matsushita Si-Di MA141WA SOT-323 2 10

MN Matsushita Si-Di MA151WA SOT-23 10

MN Sanyo Si-N 2SC5245 SOT-323 2 10

MN Sanyo Si-N 2SC5275 SOT-23 10

MN Sanyo Si-N 2SC5276 SOT-143 13

MN Sanyo Si-N 2SC5490 (SSFP) 1,4 10

MN Sanyo Si-N 2SC5504 SOT-343 2 13

MN Thomson Z-Di SM6T27C SOD-6 6×4 19

MN Toshiba Si-N 2SC4317 SOT-23 10

MN Toshiba Si-N 2SC4318 SOT-89 11

MN Toshiba Si-N 2SC4319 ~SOT-103 7

MN Toshiba Si-N 2SC4320 SOT-143 13

MI … MN

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Page 164:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

MN Toshiba Si-N 2SC4321 SOT-323 2 10

MN Toshiba Si-N 2SC4840 SS Mini 1,6 10

MN Toshiba Si-N 2SC4843 SOT-343 2 13

MN3 Sanyo Si-N 2SC5245-3 SOT-323 2 10

MN3 Sanyo Si-N 2SC5275-3 SOT-23 10

MN3 Sanyo Si-N 2SC5276-3 SOT-143 13

MN4 Sanyo Si-N 2SC5245-4 SOT-323 2 10

MN4 Sanyo Si-N 2SC5275-4 SOT-23 10

MN4 Sanyo Si-N 2SC5276-4 SOT-143 13

MN4 Sanyo Si-N 2SC5504-4 SOT-343 2 13

MN5 Sanyo Si-N 2SC5245-5 SOT-323 2 10

MN5 Sanyo Si-N 2SC5275-5 SOT-23 10

MN5 Sanyo Si-N 2SC5276-5 SOT-143 13

MN5 Sanyo Si-N 2SC5504-5 SOT-343 2 13

MO AEG MOS-N-FET-d BF998 SOT-143 13

MO Matsushita Si-Di MA132WA SS Mini 1,6 10

MO Matsushita Si-Di MA142WA SOT-323 2 10

MO Matsushita Si-Di MA152WA SOT-23 10

MO Siemens MOS-N-FET-d BF998 SOT-143 13

MO Toshiba Si-P 2SA1255-O SOT-23 10

MO Toshiba Si-N 2SC2873-O SOT-89 11

MO Toshiba Si-N 2SC4322 SOT-23 10

MO Toshiba Si-N 2SC4323 ~SOT-103 7

MO Toshiba Si-N 2SC4324 SOT-143 13

MO Toshiba Si-N 2SC4325 SOT-323 2 10

MO Toshiba Si-N 2SC4841 SS Mini 1,6 10

MO Toshiba Si-N 2SC4844 SOT-343 2 13

MO Philips MOS-N-FET-d BF998(R) SOT-143 13

MO Siemens MOS-N-FET-d BF998(R) SOT-143 13

MO1 Philips MOS-N-FET-e* BF901 SOT-143 13

MO2 Philips MOS-N-FET-e* BF901R SOT-143 13

MOs Siemens MOS-N-FET-d BF998W SOT-343 2 13

MP Fagor Z-Di P6SMB-68A DO-214AA 5 19

MP Matsushita Si-Di MA133 SS Mini 1,6 10

MP Matsushita Si-Di MA143A SOT-323 2 10

MN … MP

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Page 165:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

M

MP Matsushita Si-Di MA153A SOT-23 10

MP NEC Si-P HR1A3M SOT-89 11

MP Thomson Z-Di SM6T27CA SOD-6 6×4 19

MP Toshiba Si-N 2SC4470 SOT-23 10

MQ Fagor Z-Di P6SMB-75 DO-214AA 5 19

MQ NEC Si-P HR1F3P SOT-89 11

MQ Thomson Z-Di SM6T30C SOD-6 6×4 19

MR Fagor Z-Di P6SMB-75A DO-214AA 5 19

MR Matsushita Si-Di MA157 SOT-23 10

MR NEC Si-P HR1L3N SOT-89 11

MR Thomson Z-Di SM6T30CA SOD-6 6×4 19

MR Zetex MOS-P-FET-e ZVP3310F SOT-23 10

MS Fagor Z-Di P6SMB-82 DO-214AA 5 19

MS Matsushita Si-Di MA137 SS Mini 1,6 10

MS Matsushita Si-Di MA147 SOT-323 2 10

MS Matsushita Si-Di MA157A SOT-23 10

MS NEC Si-P HR1A4M SOT-89 11

MS Sanyo Si-P 2SA1963 SOT-23 10

MS Siemens GaAs-N-FET-d CF739 SOT-143 13

MS Thomson Z-Di SM6T33C SOD-6 6×4 19

MS1 Sanyo Si-P 2SA1963-1 SOT-23 10

MS2 Sanyo Si-P 2SA1963-2 SOT-23 10

MS3 Sanyo Si-P 2SA1963-3 SOT-23 10

MT Fagor Z-Di P6SMB-82A DO-214AA 5 19

MT Matsushita Si-Di MA141WK SOT-323 2 10

MT Matsushita Si-Di MA151WK SOT-23 10

MT NEC Si-P HR1L2Q SOT-89 11

MT Sanyo Si-N 2SC4360 SOT-23 10

MT Thomson Z-Di SM6T33CA SOD-6 6×4 19

MT Zetex MOS-P-FET-e ZVP1320F SOT-23 10

MU Fagor Z-Di P6SMB-91 DO-214AA 5 19

MU Matsushita Si-Di MA132WK SS Mini 1,6 10

MU Matsushita Si-Di MA142WK SOT-323 2 10

MU Matsushita Si-Di MA152WK SOT-23 10

MU NEC Si-P HR1F2Q SOT-89 11

MP … MU

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Page 166:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

MU Thomson Z-Di SM6T36C SOD-6 6×4 19

MU Zetex MOS-N-FET-e ZVN3320F SOT-23 10

MV Fagor Z-Di P6SMB-91A DO-214AA 5 19

MV Sanyo PIN-Di 1SV272 SOT-23 10

MV Thomson Z-Di SM6T36CA SOD-6 6×4 19

MV Zetex MOS-N-FET-e BS170F SOT-23 10

MW AEG MOS-N-FET BF996S SOT-143 13 BF966

MW Fagor Z-Di P6SMB-100 DO-214AA 5 19

MW Philips MOS-N-FET BF996S SOT-143 13

MW Siemens MOS-N-FET BF996S SOT-143 13 BF966

MW Thomson Z-Di SM6T39C SOD-6 6×4 19

MX Fagor Z-Di P6SMB-100A DO-214AA 5 19

MX Matsushita C-Di MA57 SOT-23 10

MX NEC Si-P HR1A4A SOT-89 11

MX Siemens GaAs-N-FET-d CF750 SOT-143 13

MX Thomson Z-Di SM6T39CA SOD-6 6×4 19

MX Zetex MOS-P-FET-e BS250F SOT-23 10

MY Fagor Z-Di P6SMB-110 DO-214AA 5 19

MY Hitachi MOS-P-FET-e 2SJ278 SOT-89 11

MY Matsushita PIN-Di MA3Z551 SOT-323 2 10

MY Matsushita PIN-Di MA551 SOT-23 10

MY Sanyo Si-N 2SC3773 SOT-23 10

MY Toshiba Si-P 2SA1255-Y SOT-23 10

MY Toshiba Si-N 2SC2873-Y SOT-89 11

MY Zetex MOS-N-FET-e VN10LF SOT-23 10

MYs Siemens MOS-N-FET-d BF1012 SOT-143 13

MZ Fagor Z-Di P6SMB-110A DO-214AA 5 19

MZ Matsushita C-Di MA370 SOT-23 10

MZ Siemens Si-N BFS17R SOT-23 10

MZ Zetex MOS-N-FET-e ZVN4106F SOT-23 10

MZs Siemens MOS-N-FET-d BF1005 SOT-143 13

N

N Hitachi C-Di HVU316 SOD-323 1,7 19

N Matsushita Si-N 2SD1679 SOT-23 10

MU … N

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Page 167:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

N Matsushita GaAs-N-FET 2SK1963 SOT-173 17

N Matsushita Si-Di MA2S357 SOD-523 1,3 19

N Matsushita Z-Di MAZS047 SOD-523 1,3 19

N Matsushita Z-Di MAZS0470G SOD-523 1,3 19

N Siemens PIN-Di BAR65-02W (SCD-80) 1,3 19

N Siemens Si-Di BAT63-03W SOD-323 1,7 19

N Toshiba Si-Di S5566N DO-41 9

N0 Philips Si-N BFS505 SOT-323 2 10

N0 Siliconix MOS-N-FET-e TN0200T SOT-23 10

N02 Zetex MOS-N-FET-e ZXM61N02F SOT-23 10

N03 Zetex MOS-N-FET-e ZXM61N03F SOT-23 10

N05 Thomson Si-N SO2484 SOT-23 10 BC850

N08 Thomson Si-N SO930 SOT-23 10 BC850

N1 General Si-P D71F2T1 SOT-89 11

N1 Mitsubishi Si-N+R RT1N137P SOT-89 11

N1 Mitsubishi Si-N+R RT1N141C SOT-23 10

N1 Mitsubishi Si-N+R RT1N141M SOT-323 2 10

N1 Philips Si-N BFR53 SOT-23 10 BFW93

N1 Siliconix MOS-N-FET-e TN0201T SOT-23 10

N1 Thomson Si-N BFR53 SOT-23 10 BFW93

N1 Valvo Si-N BFR53 SOT-23 10

N1 Zetex Si-N FCX491 SOT-89 11

N10 Thomson Si-N SO918 SOT-23 10

N11 Sanyo N-FET 2SK334-N11 SOT-23 10

N11 Thomson Si-N SO2369 SOT-23 10 2SC4168

N12 Origin Si-Di SM-1XN12 (2,8×2,3) 9

N12 Sanyo N-FET 2SK334-N12 SOT-23 10

N12 Thomson Si-N SO2221 SOT-23 10 BCW65

N13 Sanyo N-FET 2SK334-N13 SOT-23 10

N13 Thomson Si-N SO2222 SOT-23 10 BCW66

N14 Sanyo N-FET 2SK334-N14 SOT-23 10

N140 Mitsubishi Si-N+R RT1N140S (TO-92S) 12

N141 Mitsubishi Si-N+R RT1N141S (TO-92S) 12

N144 Mitsubishi Si-N+R RT1N144S (TO-92S) 12

N15 NEC Si-N 2SC3360-N15 SOT-23 10

N … N15

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

N15D Zetex MOS-N-FET-e ZXT13N15DE6 SOT-163 15

N16 NEC Si-N 2SC3360-N16 SOT-23 10

N16 Origin Si-Di SM-1XN16 (2,8×2,3) 9

N17 NEC Si-N 2SC3360-N17 SOT-23 10

N17 Thomson Si-N SO1613 SOT-23 10

N18 Thomson Si-N SO1711 SOT-23 10 BCW66

N1A Supertex MOS-N-FET-e VN2110K1 SOT-23 10

N1C Supertex MOS-N-FET-e TN2124K1 SOT-23 10

N1L Supertex MOS-N-FET-e TN2106K1 SOT-23 10

N1T Supertex MOS-N-FET-e TN2130K1 SOT-23 10

N1U Supertex MOS-N-FET-e TN2101K1 SOT-23 10

N2 KEC Si-N+R KRC116S SOT-23 10

N2 KEC Si-N+R KRC416 SOT-323 2 10

N2 Mitsubishi Si-N+R RT1N241C SOT-23 10

N2 Mitsubishi Si-N+R RT1N241M SOT-323 2 10

N2 Motorola Si-N 2SC1653-N2 SOT-23 10

N2 National Si-N MMBT200 SOT-23 10

N2 NEC Si-N 2SC1653-N2 SOT-23 10

N2 Origin Si-Di F1N2 SOD-323 1,7 19

N2 Origin Si-Di SM-1XN02 (2,8×2,3) 9

N2 Philips Si-N BFS520 SOT-323 10

N2 Zetex Si-N FCX491A SOT-89 11

N20 Thomson Si-N SO2222A SOT-23 10

N20D Thomson Si-N SO2222A SOT-23 10

N20D Zetex MOS-N-FET-e ZXT13N20DE6 SOT-163 15

N241 Mitsubishi Si-N+R RT1N241S (TO-92S) 12

N27 Thomson Si-N SO1893 SOT-23 10 BCX41

N28 Philips Si-N BFR520 SOT-23 10

N28 Thomson Si-N SO3572 SOT-23 10

N2A National Si-N MMBT200A SOT-23 10

N3 KEC C-Di KDV152S SOT-23 10

N3 Mitsubishi Si-N+R RT1N441C SOT-23 10

N3 Mitsubishi Si-N+R RT1N441M SOT-323 2 10

N3 Motorola Si-N 2SC1653-N3 SOT-23 10

N3 NEC Si-N 2SC1653-N3 SOT-23 10

N15D … N3

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Page 169:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

N30 Philips Si-N BFR505 SOT-23 10

N33 Philips Si-N BFG505 SOT-143 13

N36 Philips Si-N BFG520 SOT-143 13

N37 Philips Si-N BFG540 SOT-143 13

N39 Philips Si-N BFG505X SOT-143 13

N4 KEC Si-N+R KRC117S SOT-23 10

N4 KEC Si-N+R KRC417 SOT-323 2 10

N4 Mitsubishi Si-N+R RT1N434C SOT-23 10

N4 Mitsubishi Si-N+R RT1N434M SOT-323 2 10

N4 Motorola Si-N 2SC1653-N4 SOT-23 10

N4 NEC Si-N 2SC1653-N4 SOT-23 10

N4 Origin Si-Di F1N4 DO-214AC 5 19

N4 Origin Si-Di F1N4 SOD-323 1,7 19

N4 Origin Si-Di SM-1XN04 (2,8×2,3) 9

N4 Philips Si-N BFR53R SOT-23 10 BFW93

N4 Philips Si-N BFS540 SOT-323 2 10

N4 Thomson Si-N BFR53R SOT-23 10 BFW93

N4 Valvo Si-N BFR53R SOT-23 10

N42 Philips Si-N BFG520X SOT-143 13

N43 Philips Si-N BFG540X SOT-143 13

N430 Mitsubishi Si-N+R RT1N430S (TO-92S) 12

N434 Mitsubishi Si-N+R RT1N434S (TO-92S) 12

N44 Thomson Si-N SO3571 SOT-23 10

N441 Mitsubishi Si-N+R RT1N441S (TO-92S) 12

N45 Philips Si-N BFG505XR SOT-143 13

N47 Thomson Si-N SO3570 SOT-23 10

N48 Philips Si-N BFG520XR SOT-143 13

N49 Philips Si-N BFG540XR SOT-143 13

N5 KEC Si-N+R KRC118S SOT-23 10

N5 KEC Si-N+R KRC418 SOT-323 2 10

N5 Mitsubishi Si-N+R RT1N144C SOT-23 10

N5 Mitsubishi Si-N+R RT1N144M SOT-323 2 10

N5 Motorola Si-N 2SC1653-N5 SOT-23 10

N5 NEC Si-N 2SC1653-N5 SOT-23 10

N50D Zetex MOS-N-FET-e ZXT13N50DE6 SOT-163 15

N30 … N50D

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Page 170:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

N54 Thomson Si-N SO2221A SOT-23 10

N58 Zetex Si-N FCX458 SOT-89 11

N6 KEC Si-N+R KRC119S SOT-23 10

N6 KEC Si-N+R KRC419 SOT-323 2 10

N6 Mitsubishi Si-N+R RT1N430C SOT-23 10

N6 Mitsubishi Si-N+R RT1N430M SOT-323 2 10

N6 Motorola Si-N 2SC1653-N6 SOT-23 10

N6 NEC Si-N 2SC1653-N6 SOT-23 10

N6 Origin Si-Di F1N6 DO-214AC 5 19

N6 Origin Si-Di SM-1XN06 (2,8×2,3) 9

N6 Philips Si-N BFS25A SOT-323 2 10

N66 Thomson Si-N SO269 SOT-23 10

N7 KEC Si-N+R KRC120S SOT-23 10

N7 KEC Si-N+R KRC420 SOT-323 2 10

N7 Mitsubishi Si-N+R RT1N140C SOT-23 10

N7 Mitsubishi Si-N+R RT1N140M SOT-323 2 10

N7 Motorola Si-N 2SC1653-N7 SOT-23 10

N7 NEC Si-N 2SC1653-N7 SOT-23 10

N71 Thomson Si-N SO3904 SOT-23 10 BC846

N72 Thomson Si-N SO3903 SOT-23 10

N79 Thomson Si-N SO5550 SOT-23 10

N8 KEC Si-N+R KRC121S SOT-23 10

N8 KEC Si-N+R KRC421 SOT-323 2 10

N8 Origin Si-Di SM-1XN08 (2,8×2,3) 9

N80 Thomson Si-N SO5551 SOT-23 10

N81 Thomson Si-N SO2369A SOT-23 10

N87 Thomson Si-N SO502S SOT-23 10

N88 Thomson Si-P SO970 SOT-23 10

N9 KEC Si-N+R KRC122S SOT-23 10

N9 KEC Si-N+R KRC422 SOT-323 2 10

N9 Toshiba Si-Di 1SS372 SOT-323 2 10

N9 Toshiba Si-Di 1SS374 SOT-23 10

N91 Thomson Si-N SO642 SOT-23 10

N93 Zetex Si-N FCX493 SOT-89 11

N94 Thomson Si-N SO517 SOT-23 10

N54 … N94

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

N95 Zetex Si-N FCX495 SOT-89 11

NA AEG Si-N BFS20 SOT-23 10

NA KEC Si-N+R KRC101S SOT-23 10

NA KEC Si-N+R KRC401 SOT-323 2 10

NA National Si-N MMBT100 SOT-23 10

NA NEC MOS-N-FET-e 2SK1273 SOT-89 11

NA Sanyo Si-N 2SC5374 SC-75 1,6 10

NA Sanyo Si-N 2SC5375 SOT-323 2 10

NA Sanyo Si-N 2SC5538 (SSFP) 1,4 10

NA Siemens Si-N BFS20 SOT-23 10

NA Siemens GaAs-N-FET-d CFY35-20 SOT-143 13

NA Zetex Si-N FMMTA05R SOT-23 10

NA1 National Si-N MMBT100A SOT-23 10

NA1 NEC MOS-N-FET-e 2SK2053 SOT-89 11

NA2 NEC MOS-N-FET-e 2SK2054 SOT-89 11

NA3 NEC MOS-N-FET-e 2SK2055 SOT-89 11

NA4 NEC MOS-N-FET-e 2SK2157 SOT-89 11

NB AEG Si-N BF599 SOT-23 10 BF799

NB KEC Si-N+R KRC102S SOT-23 10

NB KEC Si-N+R KRC402 SOT-323 2 10

NB NEC MOS-N-FET-e 2SK1483 SOT-89 11

NB Siemens Si-N BF599 SOT-23 10 BF799

NB Siemens GaAs-N-FET-d CFY35-23 SOT-143 13

NB Thomson Si-N BF599 SOT-23 10 BF799

NB Zetex Si-P FMMTA55R SOT-23 10

NC KEC Si-N+R KRC103S SOT-23 10

NC KEC Si-N+R KRC403 SOT-323 2 10

NC NEC MOS-N-FET-e 2SK1485 SOT-89 11

NC Philips Si-N BF840 SOT-23 10 BF240

NC Siemens Si-N BF840 SOT-23 10 BF240

NCp Philips Si-N BF840 SOT-23 10

NCs Siemens MOS-N-FET-d BF2040 SOT-143 13

NCs Siemens MOS-N-FET-d BF2040W SOT-343 2 13

ND Fagor Z-Di P6SMB-120 DO-214AA 5 19

ND Hitachi Si-N 2SD1306-D SOT-23 10

N95 … ND

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

ND KEC Si-N+R KRC104S SOT-23 10

ND KEC Si-N+R KRC404 SOT-323 2 10

ND NEC MOS-N-FET-e 2SK1583 SOT-89 11

ND Philips Si-N BF841 SOT-23 10 BF241

ND Sanyo Si-N 2SC5539 (SSFP) 1,4 10

ND Siemens Si-N BF841 SOT-23 10 BF241

NDE Supertex MOS-N-FET-d LND250 SOT-23 10

NDp Philips Si-N BF841 SOT-23 10

NDs Hitachi MOS-N-FET-e BF2000W SOT-343 2 13

NDs Siemens MOS-N-FET-e BF2000 SOT-143 13

NE Fagor Z-Di P6SMB-120A DO-214AA 5 19

NE Hitachi Si-N 2SD1306-E SOT-23 10

NE KEC Si-N+R KRC105S SOT-23 10

NE KEC Si-N+R KRC405 SOT-323 2 10

NE NEC MOS-N-FET-e 2SK1585 SOT-89 11

NEE Supertex MOS-N-FET-e LNE150 SOT-23 10

NEs Siemens MOS-N-FET-d BF2030 SOT-143 13

NEs Siemens MOS-N-FET-d BF2030W SOT-343 2 13

NF Fagor Z-Di P6SMB-130 DO-214AA 5 19

NF KEC Si-N+R KRC106S SOT-23 10

NF KEC Si-N+R KRC406 SOT-323 2 10

NF NEC MOS-N-FET-e 2SK1587 SOT-89 11

NF Sanyo Si-N 2SC5646 (SSFP) 1,4 10

NG Fagor Z-Di P6SMB-130A DO-214AA 5 19

NG NEC MOS-N-FET-e 2SK1588 SOT-89 11

NH Fagor Z-Di P6SMB-150 DO-214AA 5 19

NH KEC Si-N+R KRC107S SOT-23 10

NH KEC Si-N+R KRC407 SOT-323 2 10

NH NEC MOS-N-FET-e 2SK1584 SOT-89 11

NI KEC Si-N+R KRC108S SOT-23 10

NI KEC Si-N+R KRC408 SOT-323 2 10

NI NEC MOS-N-FET-e 2SK1586 SOT-89 11

NI- Hitachi GaAs-N-FET-d 3SK191 SOT-143 13

nieb. Philips C-Di BA583 SOD-123

nieb. Philips C-Di BA584 SOD-123

ND … nieb.

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Page 173:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

nieb. Siemens C-Di BA583 SOD-123

nieb. Siemens C-Di BA584 SOD-123

nieb._ Philips C-Di BA582 SOD-123 1SS241

nieb._ Siemens C-Di BA582 SOD-123 1SS241

NJ KEC Si-N+R KRC109S SOT-23 10

NJ KEC Si-N+R KRC409 SOT-323 2 10

NJ Sanyo MOS-N-FET-e 3SK248 SOT-143 13

NK Fagor Z-Di P6SMB-150A DO-214AA 5 19

NK KEC Si-N+R KRC110S SOT-23 10

NK KEC Si-N+R KRC410 SOT-323 2 10

NK NEC Si-N 2SC2780-NK SOT-89 11

NL Fagor Z-Di P6SMB-160 DO-214AA 5 19

NL NEC Si-N 2SC2780-NL SOT-89 11

NL Sanyo Si-P 2SA1520 SOT-23 10

NM Fagor Z-Di P6SMB-160A DO-214AA 5 19

NM KEC Si-N+R KRC111S SOT-23 10

NM KEC Si-N+R KRC411 SOT-323 2 10

NM NEC Si-N 2SC2780-NM SOT-89 11

NN Fagor Z-Di P6SMB-170 DO-214AA 5 19

NN KEC Si-N+R KRC112S SOT-23 10

NN KEC Si-N+R KRC412 SOT-323 2 10

NN Sanyo Si-N 2SC5310 SOT-23 10

NN5 Sanyo Si-N 2SC5310-5 SOT-23 10

NN6 Sanyo Si-N 2SC5310-6 SOT-23 10

NO KEC Si-N+R KRC113S SOT-23 10

NO KEC Si-N+R KRC413 SOT-323 2 10

NO NEC MOS-N-FET-e 2SK1592 SOT-89 11

NO Toshiba Si-P 2SA1213-O SOT-89 11

NO Toshiba Si-N 2SC3138-O SOT-23 10

NO5 Thomson Si-N SO2484 SOT-23 10

NO8 Thomson Si-N SO930 SOT-23 10

NP Fagor Z-Di P6SMB-170A DO-214AA 5 19

NP KEC Si-N+R KRC114S SOT-23 10

NP KEC Si-N+R KRC414 SOT-323 2 10

NP NEC MOS-N-FET-e 2SK1593 SOT-89 11

nieb. … NP

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Page 174:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

N

NP Thomson Z-Di SM6T68C SOD-6 6×4 19

NQ Fagor Z-Di P6SMB-180 DO-214AA 5 19

NQ KEC Si-N+R KRC241S SOT-23 10

NQ NEC MOS-N-FET-e 2SK1959 SOT-89 11

NQ Thomson Z-Di SM6T68CA SOD-6 6×4 19

NR Fagor Z-Di P6SMB-180A DO-214AA 5 19

NR KEC Si-N+R KRC242S SOT-23 10

NR Matsushita Si-N 2SD1679-R SOT-23 10

NR NEC MOS-N-FET-e 2SK1960 SOT-89 11

NS Fagor Z-Di P6SMB-200 DO-214AA 5 19

NS KEC Si-N+R KRC243S SOT-23 10

NS Matsushita Si-N 2SD1679-S SOT-23 10

NS NEC MOS-N-FET-e 2SK2109 SOT-89 11

NS Sanyo Si-P 2SA1973 SOT-23 10

NS Sanyo Si-P 2SB1527 SOT-23 10

NS Siliconix MOS-N-FET-e TN0200TS SOT-23 10

NS5 Sanyo Si-P 2SA1973-5 SOT-23 10

NS6 Sanyo Si-P 2SA1973-6 SOT-23 10

NT Fagor Z-Di P6SMB-200A DO-214AA 5 19

NT KEC Si-N+R KRC244S SOT-23 10

NT Matsushita Si-N 2SD1679-T SOT-23 10

NT NEC MOS-N-FET-e 2SK2110 SOT-89 11

NT Sanyo Si-N 2SC4362 SOT-23 10

NU Fagor Z-Di P6SMB-220 DO-214AA 5 19

NU KEC Si-N+R KRC245S SOT-23 10

NU NEC MOS-N-FET-e 2SK2111 SOT-89 11

NV Fagor Z-Di P6SMB-220A DO-214AA 5 19

NV KEC Si-N+R KRC246S SOT-23 10

NV NEC MOS-N-FET-e 2SK2112 SOT-89 11

NW KEC Si-N+R KRC231S SOT-23 10

NW NEC MOS-N-FET-e 2SK2159 SOT-89 11

NX NEC MOS-N-FET-e* 2SK2857 SOT-89 11

NX Thomson Z-Di SM6T100C SOD-6 6×4 19

NY Hitachi MOS-N-FET-e 2SJ317 SOT-89 11

NY KEC Si-N+R KRC232S SOT-23 10

NP … NY

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Page 175:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

OdpowiednikONY Sanyo Si-N 2SC3774 SOT-23 10

NY Sanyo Si-N 2SC4004 SOT-23 10

NY Thomson Z-Di SM6T100CA SOD-6 6×4 19

NY Toshiba Si-P 2SA1213-Y SOT-89 11

NY Toshiba Si-N 2SC3138-Y SOT-23 10

NYs Siemens MOS-N-FET-d BF1012S SOT-143 13

NZ KEC Si-N+R KRC233S SOT-23 10

NZ Siemens Si-N BFS20R SOT-23 10

NZs Siemens MOS-N-FET-d BF1005S SOT-143 13

O

O Matsushita MOS-N-FET-e 2SK601 SOT-89 11

O Siemens C-Di BB857 (SCD-80) 1,3 19

O05 Thomson Si-N SO2484R SOT-23 10

O08 Thomson Si-N SO930R SOT-23 10

O11 Thomson Si-N SO2369R SOT-23 10

O12 Thomson Si-N SO2221R SOT-23 10

O13 Thomson Si-N SO2222R SOT-23 10

O15 NEC Si-P 2SA1609-O15 SOT-323 2 10

O16 NEC Si-P 2SA1609-O16 SOT-323 2 10

O17 NEC Si-P 2SA1609-O17 SOT-323 2 10

O17 Thomson Si-N SO1613R SOT-23 10

O18 Thomson Si-N SO1711R SOT-23 10

O2 Philips MOS-N-FET-e BST82 SOT-89 11 BST72A

O20 Thomson Si-N SO1711AR SOT-23 10

O27 Thomson Si-N SO1893R SOT-23 10

O4 Sanyo Si-P 2SA1331-4 SOT-23 10

O5 NEC Si-P 2SA1330-O5 SOT-23 10

O5 Sanyo Si-P 2SA1331-5 SOT-23 10

O54 Thomson Si-N SO2221AR SOT-23 10

O6 NEC Si-P 2SA1330-O6 SOT-23 10

O6 Sanyo Si-P 2SA1331-6 SOT-23 10

O7 NEC Si-P 2SA1330-O7 SOT-23 10

O71 Thomson Si-N SO3904R SOT-23 10

O72 Thomson Si-N SO3903R SOT-23 10

NY … O72

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Page 176:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PO79 Thomson Si-N SO5550R SOT-23 10

O80 Thomson Si-N SO5551R SOT-23 10

O81 Thomson Si-N SO2369AR SOT-23 10

OA NEC Si-P/N µPA608T SOT-163 15

OA Siliconix MOS-P-FET-e Si1403DL SOT-363 2 15

OB Siliconix MOS-P-FET-e Si1405DL SOT-363 2 15

OC Matsushita GaAs-FET-IC GN1042 SOT-143 13

OC Matsushita N-FET XN1D873 SOT-153 14

OC Matsushita N-FET XP1D873 SOT-353 2 14

OC Siliconix MOS-P-FET-e Si1407DL SOT-363 2 15

OE Matsushita Si-N+R XN421F SOT-163 15

OF Matsushita Si-P XN4130 SOT-163 15

OH Matsushita Si-P XN4402 SOT-163 15

OK NEC Si-N 2SC3736-OK SOT-89 11

OK Thomson Z-Di SM6T150C SOD-6 6×4 19

OL Matsushita Si-P+R XN1117 SOT-153 14

OL Matsushita Si-P+R XP1117 SOT-353 2 14

OL NEC Si-N 2SC3736-OL SOT-89 11

OL Sanyo Si-P 2SA1521 SOT-23 10

OL Thomson Z-Di SM6T150CA SOD-6 6×4 19

OM Matsushita Si-P+R XN1118 SOT-153 14

OM Matsushita Si-P+R XP1118 SOT-353 2 14

ON Matsushita Si-P XN4482 SOT-163 15

OO Toshiba Si-P 2SA1255-O SOT-23 10

OT Sanyo Si-N 2SC4001 SOT-23 10

OT Sanyo Si-N 2SC4364 SOT-23 10

OT Thomson Z-Di SM6T200C SOD-6 6×4 19

OU Thomson Z-Di SM6T200CA SOD-6 6×4 19

OY Sanyo Si-N 2SC3775 SOT-23 10

OY Sanyo Si-N 2SC4005 SOT-23 10

OY Toshiba Si-P 2SA1255-Y SOT-23 10

P

P Hitachi C-Di HVU314 SOD-323 1,7 19

P Matsushita Si-N-Darl 2SD1511 SOT-89 11

O79 … P

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PP Matsushita Si-N 2SD1821 SOT-323 2 10

P Matsushita Si-N 2SD2240 SC-75 1,6 10

P Matsushita Si-N 2SD814 SOT-23 10

P Matsushita GaAs-N-FET 2SK1964 SOT-173 17

P Matsushita Si-Di MA2S367 SOD-523 1,3 19

P Matsushita Z-Di MAZS056 SOD-523 1,3 19

P0 Philips C-Di BB150 SOD-323 1,7 19

P0 Valvo Si-N BFP90A SOT-173 17

p01 Philips Si-P+R PDTA143ET SOT-23 10

P01 Thomson Si-P SO2906 SOT-23 10 BCW68

p02 Philips Si-N+R PDTC143ET SOT-23 10

P02 Zetex MOS-P-FET-e ZXM61P02F SOT-23 10

p03 Philips Si-P+R PDTA114ET SOT-23 10

P03 Thomson Si-P SO2907A SOT-23 10

P03 Zetex MOS-P-FET-e ZXM61P03F SOT-23 10

P04 Philips Si-N PMSS3904 SOT-323 2 10

p05 Philips Si-P+R PDTA124ET SOT-23 10

P05 Thomson Si-P SO2907 SOT-23 10

P06 Philips Si-P PMSS3906 SOT-323 2 10

P06 Thomson Si-P SO2894 SOT-23 10 2SA1607

p07 Philips Si-P+R PDTA144ET SOT-23 10

p08 Philips Si-P+R PDTC144ET SOT-23 10

P08 Philips N-FET PMBFJ108 SOT-23 10

p09 Philips Si-P+R PDTB114ET SOT-23 10

P09 Philips N-FET PMBFJ109 SOT-23 10

P1 AEG Si-N BFR92 SOT-23 10

P1 Europa Si-N BFR92 SOT-23 10 BFR90

P1 Ferranti Si-N BFS42 SOT-323 2 10

P1 General Si-N D70Y.8T1 SOT-89 11

P1 Hitachi PIN-Di HVC131 SOD-523 1,3 19

P1 Hitachi PIN-Di HVU131 SOD-323 1,7 19

P1 Mitsubishi Si-P+R RT1P137P SOT-89 11

P1 Mitsubishi Si-P+R RT1P141C SOT-23 10

P1 Mitsubishi Si-P+R RT1P141M SOT-323 2 10

P1 Motorola Si-N BFR92 SOT-23 10

P … P1

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Page 178:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PP1 Philips C-Di BB131 SOD-323 1,7 19

P1 Siliconix N-FET SST201 SOT-23 10

P1 Sony N-FET 2SK1577-1 SOT-23 10

P1 Valvo Si-N BFP91A SOT-193 17

P1 Zetex Si-N FCX591 SOT-89 11

P1 Philips Si-N BFR92 SOT-23 10

P10 Origin Si-Di SM-1XP10 (2,8×2,3) 9

p10 Philips Si-N+R PDTD114ET SOT-23 10

P10 Philips N-FET PMBFJ110 SOT-23 10

p11 Philips Si-P+R PDTA114TT SOT-23 10

P11 Philips N-FET PMBFJ111 SOT-23 10

p12 Philips Si-N+R PDTC114TT SOT-23 10

P12 Philips N-FET PMBFJ112 SOT-23 10

P12 Thomson Si-P SO2906A SOT-23 10

P12D Zetex MOS-P-FET-e ZXT13P12DE6 SOT-163 15

P13 Philips N-FET PMBFJ113 SOT-23 10

P140 Mitsubishi Si-P+R RT1P140S (TO-92S) 12

P141 Mitsubishi Si-P+R RT1P141S (TO-92S) 12

P144 Mitsubishi Si-P+R RT1P144S (TO-92S) 12

p16 Philips Si-N+R PDTC114ET SOT-23 10

p17 Philips Si-N+R PDTC124ET SOT-23 10

P18 Thomson Si-P SO679 SOT-23 10

P1A Philips Si-N PMBT3904 SOT-23 10

P1A Philips Si-N PMST3904 SOT-323 2 10

P1A Philips Si-N PZT3904 SOT-223 16

P1A Supertex MOS-P-FET-e VP2110K1 SOT-23 10

P1A (p1A) Philips Si-N PXT3904 SOT-89 11

P1B Philips Si-N PMBT2222 SOT-23 10

P1B (p1B) Philips Si-N PXT2222 SOT-89 11

P1D Philips Si-N PMBTA42 SOT-23 10

P1D Philips Si-N PZTA42 SOT-223 16

P1D (p1D) Philips Si-N PXTA42 SOT-89 11

P1E Philips Si-N PMBTA43 SOT-23 10

P1E Philips Si-N PZTA43 SOT-223 16

P1E (p1E) Philips Si-N PXTA43 SOT-89 11

P1 … P1E

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Page 179:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PP1F Philips Si-N PMBT5550 SOT-23 10

P1G Philips Si-N PMBTA06 SOT-23 10

P1H Philips Si-N PMBTA05 SOT-23 10

P1J Philips Si-N PMBT2369 SOT-23 10

P1K Philips Si-N PMBT6428 SOT-23 10

P1L Philips Si-N PMBT6429 SOT-23 10

P1L Supertex MOS-P-FET-e VP2104K1 SOT-23 10

P1M Philips Si-N PMBTA13 SOT-23 10

P1M Philips Si-N PZTA13 SOT-223 16

P1N Philips Si-N PMBTA14 SOT-23 10

P1N Philips Si-N PZTA14 SOT-223 16

P1N (p1N) Philips Si-N PXTA14 SOT-89 11

P1P Philips Si-N PMBT2222A SOT-23 10

P1P (p1P) Philips Si-N PXT2222A SOT-89 11

P1Q Philips Si-N PMBT5088 SOT-23 10

P1Q Philips Si-N PMST5088 SOT-323 2 10

P1R Philips Si-N PMST5089 SOT-323 2 10

P1s Europa Si-N BFR92W SOT-323 10

P1s Siemens Si-N BFR92W SOT-323 2 10

P1Y Philips Si-N PMBT3903 SOT-23 10

P2 AEG Si-N BFR92A SOT-23 10

P2 Europa Si-N BFR92A SOT-23 10

P2 Europa Si-N BFS19 SOT-23 10 BF494

P2 Ferranti Si-N BFS43 SOT-323 2 10

P2 Hitachi PIN-Di HVC132 SOD-523 1,3 19

P2 Hitachi PIN-Di HVU132 SOD-323 1,7 19

P2 KEC Si-P+R KRA116S SOT-23 10

P2 KEC Si-N+R KRC316 SOT-323 2 10

P2 Mitsubishi Si-P+R RT1P241C SOT-23 10

P2 Mitsubishi Si-P+R RT1P241M SOT-323 2 10

P2 Motorola Si-N BFR92A SOT-23 10

P2 Origin Si-Di F1P2 SOD-323 1,7 19

P2 Origin Si-Di F2P2 DO-214AC 5 19

P2 Origin Si-Di SM-1XP02 (2,8×2,3) 9

P2 Philips C-Di BB132 SOD-323 1,7 19

P1F … P2

http://www.serwis-elektroniki.com.pl/

Page 180:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PP2 Philips Si-N BFR92AW SOT-323 2 10

P2 Siemens Si-N BFR92AW SOT-323 2 10

P2 Siliconix N-FET SST202 SOT-23 10

P2 Sony N-FET 2SK1577-2 SOT-23 10

P2 Zetex Si-P FCX591A SOT-89 11

P2 Philips Si-N BFR92A SOT-23 10

P20D Zetex MOS-P-FET-e ZXT13P20DE6 SOT-163 15

P241 Mitsubishi Si-P+R RT1P241S (TO-92S) 12

P25 Thomson Si-P SO3906 SOT-23 10

P26 Thomson Si-P SO3905 SOT-23 10 BC856

P2A Philips Si-P PMBT3906 SOT-23 10

P2A Philips Si-P PMST3906 SOT-323 2 10

P2A Philips Si-P PZT3906 SOT-223 16

P2A (p2A) Philips Si-P PXT3906 SOT-89 11

P2B Philips Si-P PMBT2907 SOT-23 10

P2B Philips Si-P PZT2907 SOT-223 16

P2B (p2B) Philips Si-P PXT2907 SOT-89 11

P2D Philips Si-P PMBTA92 SOT-23 10

P2D Philips Si-P PZTA92 SOT-223 16

P2D (p2D) Philips Si-P PXTA92 SOT-89 11

P2E Philips Si-P PMBTA93 SOT-23 10

P2E Philips Si-P PZTA93 SOT-223 16

P2E (p2E) Philips Si-P PXTA93 SOT-89 11

P2F Philips Si-P PMBT2907A SOT-23 10

P2F Philips Si-P PZT2907A SOT-223 16

P2F (p2F) Philips Si-P PXT2907A SOT-89 11

P2G Philips Si-P PMBTA56 SOT-23 10

P2H Philips Si-P PMBTA55 SOT-23 10

P2L Philips Si-P PMBT5401 SOT-23 10

P2S Origin Si-Di F1P2S SOD-323 1,7 19

P2T Philips Si-P PMBT4403 SOT-23 10

P2T Philips Si-P PMST4403 SOT-323 2 10

P2T (p2T) Philips Si-P PXT4403 SOT-89 11

P2U Philips Si-P PMBTA63 SOT-23 10

P2U Philips Si-P PZTA63 SOT-223 16

P2 … P2U

http://www.serwis-elektroniki.com.pl/

Page 181:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PP2V Philips Si-P PMBTA64 SOT-23 10

P2V Philips Si-P PZTA64 SOT-223 16

P2V (p2V) Philips Si-P PXTA64 SOT-89 11

P2X Philips Si-N PMBT4401 SOT-23 10

P2X Philips Si-N PMST4401 SOT-323 2 10

P2X (p2X) Philips Si-N PXT4401 SOT-89 11

P3 Ferranti Si-P BFS44 SOT-323 2 10

P3 Hitachi PIN-Di HVC133 SOD-523 1,3 19

P3 Hitachi PIN-Di HVM132 SOT-23 10

P3 Hitachi PIN-Di HVU133 SOD-323 1,7 19

P3 Mitsubishi Si-P+R RT1P441C SOT-23 10

P3 Mitsubishi Si-P+R RT1P441M SOT-323 2 10

P3 Philips C-Di BB133 SOD-323 1,7 19

P3 Sony N-FET 2SK1577-3 SOT-23 10

P30 NEC Si-N FB1A4A SOT-23 10

P31 NEC Si-N FB1L2Q SOT-23 10

P32 NEC Si-N FB1A3M SOT-23 10

P32 Thomson Si-P SO5400 SOT-23 10

P33 NEC Si-N FB1F3P SOT-23 10

P33 Thomson Si-P SO5401 SOT-23 10

P34 NEC Si-N FB1L3N SOT-23 10

P35 NEC Si-N FB1A4M SOT-23 10

P36 NEC Si-N FB1J3P SOT-23 10

P39 Thomson Si-P SO692 SOT-23 10

P4 AEG Si-N BFR92R SOT-23 10

P4 Europa Si-N BFR92R SOT-23 10 BFR90

P4 Ferranti Si-P BFS45 SOT-323 2 10

P4 Hitachi PIN-Di HVM132WK SOT-23 10

P4 KEC Si-P+R KRA117S SOT-23 10

P4 KEC Si-P+R KRA317 SOT-323 2 10

P4 Mitsubishi Si-P+R RT1P434C SOT-23 10

P4 Mitsubishi Si-P+R RT1P434M SOT-323 2 10

P4 Motorola Si-N BFR92R SOT-23 10

P4 Origin Si-Di SM-1XP04 (2,8×2,3) 9

P4 Philips C-Di BB134 SOD-323 1,7 19

P2V … P4

http://www.serwis-elektroniki.com.pl/

Page 182:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 173 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PP4 Sanyo Si-N 2SD1161-P4 SOT-23 10

P4 Siliconix N-FET SST204 SOT-23 10

P4 Thomson Si-N BFR92R SOT-23 10

P40 Thomson Si-P SO506 SOT-23 10

P40D Zetex MOS-P-FET-e ZXT13P40DE6 SOT-163 15

P41 Valvo Si-N BFR92R SOT-23 10

P430 Mitsubishi Si-P+R RT1P430S (TO-92S) 12

P434 Mitsubishi Si-P+R RT1P434S (TO-92S) 12

P441 Mitsubishi Si-P+R RT1P441S (TO-92S) 12

p4f Philips Si-Di PMBD353 SOT-23 10

P5 AEG Si-N BFR92AR SOT-23 10

P5 Europa Si-N BFR92AR SOT-23 10 BFR90

P5 Ferranti Si-N FMMT2369A SOT-23 10

P5 Hitachi PIN-Di HVM131S SOT-23 10

P5 KEC Si-P+R KRA118S SOT-23 10

P5 KEC Si-P+R KRA318 SOT-323 2 10

P5 Mitsubishi Si-P+R RT1P144C SOT-23 10

P5 Mitsubishi Si-P+R RT1P144M SOT-323 2 10

P5 Motorola Si-N BFR92AR SOT-23 10

P5 Philips C-Di BB135 SOD-323 1,7 19

P5 Sanyo Si-N 2SD1161-P5 SOT-23 10

P5 Thomson Si-N BFR92AR SOT-23 10

P58 Zetex Si-P FCX558 SOT-89 11

p5A Philips Si-Di PMMBD6050 SOT-23 10

p5B Philips Si-Di PMMBD6100 SOT-23 10

p5C Philips Si-Di PMMBD7000 SOT-23 10

p5D Philips Si-Di PMMBD914 SOT-23 10

p5g Philips Si-Di PMBD352 SOT-23 10

P6 Hitachi PIN-Di HVM131SR SOT-23 10

P6 KEC Si-P+R KRA119S SOT-23 10

P6 KEC Si-P+R KRA319 SOT-323 2 10

P6 Mitsubishi Si-P+R RT1P430C SOT-23 10

P6 Mitsubishi Si-P+R RT1P430M SOT-323 2 10

P6 Origin Si-Di SM-1XP06 (2,8×2,3) 9

P6 Philips C-Di BB146 SOD-323 1,7 19

P4 … P6

http://www.serwis-elektroniki.com.pl/

Page 183:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 174 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PP6 Sanyo Si-N 2SD1161-P6 SOT-23 10

P6 Valvo Si-N BFP96 SOT-173 17

P6A Philips N-FET PMBF4416 SOT-23 10

p6B Philips N-FET PMBF5484 SOT-23 10

p6G Philips N-FET PMBF4393 SOT-23 10

p6H Philips N-FET PMBF5486 SOT-23 10

p6J Philips N-FET PMBF4391 SOT-23 10

p6K Philips N-FET PMBF4392 SOT-23 10

p6M Philips N-FET PMBF5485 SOT-23 10

p6S Philips P-FET PMBF176 SOT-23 10

p6W Philips P-FET PMBF175 SOT-23 10

p6X Philips P-FET PMBF174 SOT-23 10

p6Y Philips P-FET PMBF177 SOT-23 10

P7 KEC Si-P+R KRA120S SOT-23 10

P7 KEC Si-P+R KRA320 SOT-323 2 10

P7 Mitsubishi Si-P+R RT1P140C SOT-23 10

P7 Mitsubishi Si-P+R RT1P140M SOT-323 2 10

P7 Philips C-Di BB147 SOD-323 1,7 19

P8 AEG Si-N BFG92A SOT-143 13 BFR90A

P8 KEC Si-P+R KRA121S SOT-23 10

P8 KEC Si-P+R KRA321 SOT-323 2 10

P8 Philips C-Di BB148 SOD-323 1,7 19

P8 Philips Si-N BFG92A SOT-143 13 BFR90A

P8 Valvo Si-N BFG92A SOT-143 13

P89 Zetex Si-P FCX589 SOT-89 11

p8A Philips Z-Di PMBZ5226B SOT-23 10

P8A Zetex Si-Di FLLD261 SOT-23 10

p8B Philips Z-Di PMBZ5227B SOT-23 10

p8C Philips Z-Di PMBZ5228B SOT-23 10

p8D Philips Z-Di PMBZ5229B SOT-23 10

p8E Philips Z-Di PMBZ5230B SOT-23 10

p8F Philips Z-Di PMBZ5231B SOT-23 10

p8G Philips Z-Di PMBZ5232B SOT-23 10

p8H Philips Z-Di PMBZ5233B SOT-23 10

p8J Philips Z-Di PMBZ5234B SOT-23 10

P6 … p8J

http://www.serwis-elektroniki.com.pl/

Page 184:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 175 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Pp8K Philips Z-Di PMBZ5235B SOT-23 10

p8L Philips Z-Di PMBZ5236B SOT-23 10

p8M Philips Z-Di PMBZ5237B SOT-23 10

p8N Philips Z-Di PMBZ5238B SOT-23 10

p8P Philips Z-Di PMBZ5239B SOT-23 10

p8Q Philips Z-Di PMBZ5240B SOT-23 10

p8R Philips Z-Di PMBZ5241B SOT-23 10

p8S Philips Z-Di PMBZ5242B SOT-23 10

p8T Philips Z-Di PMBZ5243B SOT-23 10

p8U Philips Z-Di PMBZ5244B SOT-23 10

P8U Supertex MOS-P-FET-e LP0801K1 SOT-23 10

p8V Philips Z-Di PMBZ5245B SOT-23 10

p8W Philips Z-Di PMBZ5246B SOT-23 10

p8X Philips Z-Di PMBZ5247B SOT-23 10

p8Y Philips Z-Di PMBZ5248B SOT-23 10

p8Z Philips Z-Di PMBZ5249B SOT-23 10

P9 Ferranti Si-N BCX70RK SOT-23 10

P9 KEC Si-P+R KRA122S SOT-23 10

P9 KEC Si-P+R KRA322 SOT-323 2 10

P9 Philips C-Di BB149 SOD-323 1,7 19

P9 Toshiba Si-Di 1SS379 SOT-23 10

P93 Zetex Si-P FCX593 SOT-89 11

P96 Zetex Si-P FCX596 SOT-89 11

p9A Philips Z-Di PLVA650A SOT-23 10

p9A Philips Si-N PMBS3904 SOT-23 10

p9B Philips Z-Di PLVA653A SOT-23 10

p9C Philips Z-Di PLVA656A SOT-23 10

p9D Philips Z-Di PLVA659A SOT-23 10

p9E Philips Z-Di PLVA662A SOT-23 10

p9F Philips Z-Di PLVA665A SOT-23 10

p9G Philips Z-Di PLVA668A SOT-23 10

p9j Philips Z-Di PLVA2650A SOT-23 10

p9k Philips Z-Di PLVA2653A SOT-23 10

p9l Philips Z-Di PLVA2656A SOT-23 10

p9m Philips Z-Di PLVA2659A SOT-23 10

p8K … p9m

http://www.serwis-elektroniki.com.pl/

Page 185:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Pp9n Philips Z-Di PLVA2662A SOT-23 10

p9o Philips Z-Di PLVA2665A SOT-23 10

p9p Philips Z-Di PLVA2668A SOT-23 10

PA KEC Si-P+R KRA101S SOT-23 10

PA KEC Si-P+R KRA301 SOT-323 2 10

PA Matsushita Si-Di MA735 DO-214AC 5 19

PA NEC Si-N/P µPA609T SOT-163 15

PA NEC MOS-P-FET-e 2SJ179 SOT-89 11

PA Siemens PIN-Di BA885 SOT-23 10

PA Siliconix MOS-N-FET-e Si1902DL SOT-363 2 15

PA Toshiba Si-N 2SC3295-A SOT-23 10

PA Toshiba Si-N 2SC4666A SOT-323 2 10

PA Toshiba Thy USF05G49 SOT-89 11

pA2 Philips Si-Di PMBD2836 SOT-23 10

pA3 Philips Si-Di PMBD2835 SOT-23 10

pA5 Philips Si-Di PMBD2837 SOT-23 10

pA6 Philips Si-Di PMBD2838 SOT-23 10

PAs Siemens Si-P BCP72M (SCT-595) ~14

PAs Siemens Si-N BFP136W SOT-343 2 13

PB KEC Si-P+R KRA102S SOT-23 10

PB KEC Si-P+R KRA302 SOT-323 2 10

PB Matsushita Si-Di MA736 DO-214AC 5 19

PB NEC MOS-P-FET-e 2SJ197 SOT-89 11

PB Toshiba Si-N 2SC3295-B SOT-23 10

PB Toshiba Si-N 2SC4666B SOT-323 2 10

PB Toshiba Thy URSF05G49-1P SOT-89 11

PBs Siemens Si-P BCP70M (SCT-595) ~14

PC KEC Si-P+R KRA103S SOT-23 10

PC KEC Si-P+R KRA303 SOT-323 2 10

PC Matsushita Si-Di MA737 DO-214AC 5 19

PC NEC MOS-P-FET-e 2SJ199 SOT-89 11

PC Siemens PIN-Di BA886 SOT-23 10

PC Toshiba Thy URSF05G49-3P SOT-89 11

PCs Siemens Si-N BCP71 (SCT-595) ~14

PD Fagor Z-Di P6SMB-6.8C DO-214AA 5 19

p9n … PD

http://www.serwis-elektroniki.com.pl/

Page 186:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PPD Hitachi Si-P 2SA1171-D SOT-23 10

PD KEC Si-P+R KRA104S SOT-23 10

PD KEC Si-P+R KRA304 SOT-323 2 10

PD Matsushita Si-Di MA738 DO-214AC 5 19

PD NEC MOS-P-FET-e 2SJ205 SOT-89 11

PD Toshiba Thy URSF05G49-5P SOT-89 11

PE Fagor Z-Di P6SMB-6.8CA DO-214AA 5 19

PE Hitachi Si-P 2SA1171-E SOT-23 10

PE Hitachi N-FET 2SK1070-E SOT-23 10

PE KEC Si-P+R KRA105S SOT-23 10

PE KEC Si-P+R KRA305 SOT-323 2 10

PE Matsushita Si-Di MA739 DO-214AC 5 19

PE NEC MOS-P-FET-e 2SJ207 SOT-89 11

PE Philips C-Di BB155 SOD-323 1,7 19

PF Fagor Z-Di P6SMB-7.5C DO-214AA 5 19

PF KEC Si-P+R KRA106S SOT-23 10

PF KEC Si-P+R KRA306 SOT-323 2 10

PF NEC MOS-P-FET-e 2SJ208 SOT-89 11

PG Fagor Z-Di P6SMB-7.5CA DO-214AA 5 19

pG1 Philips Si-N PMBT5551 SOT-23 10

pGl Philips Si-N PMBT5551 SOT-23 10

PH Fagor Z-Di P6SMB-8.2C DO-214AA 5 19

PH KEC Si-P+R KRA107S SOT-23 10

PH KEC Si-P+R KRA307 SOT-323 2 10

PH Matsushita Si-Di MA643 DO-214AC 5 19

PH NEC MOS-P-FET-e 2SJ206 SOT-89 11

PH Philips C-Di BB158 SOD-323 1,7 19

PI KEC Si-P+R KRA108S SOT-23 10

PI KEC Si-P+R KRA308 SOT-323 2 10

PIB Hitachi N-FET 2SK1070-B SOT-23 10

PIC Hitachi N-FET 2SK1070-C SOT-23 10

PID Hitachi N-FET 2SK1070-D SOT-23 10

PJ KEC Si-P+R KRA109S SOT-23 10

PJ KEC Si-P+R KRA309 SOT-323 2 10

PJ Philips C-Di BB159 SOD-323 1,7 19

PD … PJ

http://www.serwis-elektroniki.com.pl/

Page 187:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PPK Fagor Z-Di P6SMB-8.2CA DO-214AA 5 19

PK KEC Si-P+R KRA110S SOT-23 10

PK KEC Si-P+R KRA310 SOT-323 2 10

PK Matsushita Si-Di MA10705 DO-214AC 5 19

PK NEC Si-P 2SA1173-PK SOT-89 11

pKX Philips MOS-N-FET-e PMBF170 SOT-23 10

pKZ Philips MOS-N-FET-e PMBF107 SOT-23 10

PL Fagor Z-Di P6SMB-9.1C DO-214AA 5 19

PL Matsushita Si-Di MA2QD01 DO-214AC 5 19

PL NEC Si-P 2SA1173-PL SOT-89 11

PL Sanyo Si-P 2SB1234 SOT-23 10

PM Fagor Z-Di P6SMB-9.1CA DO-214AA 5 19

PM KEC Si-P+R KRA111S SOT-23 10

PM KEC Si-P+R KRA311 SOT-323 2 10

PM Matsushita Si-Di MA2QA01 DO-214AC 5 19

PM NEC Si-P 2SA1173-PM SOT-89 11

PMS Siemens PIN-Di BAR66 SOT-23 10

PN AEG PIN-Di BA779 SOT-23 10

PN Fagor Z-Di P6SMB-10C DO-214AA 5 19

PN KEC Si-P+R KRA112S SOT-23 10

PN KEC Si-P+R KRA312 SOT-323 2 10

PN Matsushita Si-Di MA2QA02 DO-214AC 5 19

PO KEC Si-P+R KRA113S SOT-23 10

PO KEC Si-P+R KRA313 SOT-323 2 10

PO KEC Si-N KTC4376-O SOT-89 11

PO NEC MOS-P-FET-e 2SJ212 SOT-89 11

PO Toshiba Si-P 2SA1712-O SOT-23 10

PO Toshiba Si-N 2SC2884-O SOT-89 11

PO Valvo Si-N BFP90A SOT-173 17

PO4 (pO4) Philips Si-N PMBS3904 SOT-23 10

PO6 Philips Si-P PMBS3906 SOT-23 10

POs Siemens Si-Di BAR64 SOT-23 10

PP Fagor Z-Di P6SMB-10CA DO-214AA 5 19

PP KEC Si-P+R KRA114S SOT-23 10

PP KEC Si-P+R KRA314 SOT-323 2 10

PK … PP

http://www.serwis-elektroniki.com.pl/

Page 188:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PPP NEC MOS-P-FET-e 2SJ213 SOT-89 11

PPs Siemens PIN-Di BAR64-04 SOT-23 10

PPs Siemens PIN-Di BAR64-04W SOT-323 2 10

PQ Fagor Z-Di P6SMB-11C DO-214AA 5 19

PQ KEC Si-P+R KRA221S SOT-23 10

PQ Matsushita Si-N-Darl 2SD1511-Q SOT-89 11

PQ Matsushita Si-N 2SD1821-Q SOT-323 2 10

PQ Matsushita Si-N 2SD2240-Q SS Mini 1,6 10

PQ Matsushita Si-N 2SD814-Q SOT-23 10

PQ NEC MOS-P-FET-e 2SJ355 SOT-89 11

PR Fagor Z-Di P6SMB-11CA DO-214AA 5 19

PR KEC Si-P+R KRA222S SOT-23 10

PR Matsushita Si-N-Darl 2SD1511-R SOT-89 11

PR Matsushita Si-N 2SD1821-R SOT-323 2 10

PR Matsushita Si-N 2SD2240-R SS Mini 1,6 10

PR Matsushita Si-N 2SD814-R SOT-23 10

PR NEC MOS-P-FET-e 2SJ356 SOT-89 11

PR Toshiba Si-P 2SA1712-R SOT-23 10

PRs Siemens PIN-Di BAR64-05 SOT-23 10

PS Fagor Z-Di P6SMB-12C DO-214AA 5 19

PS KEC Si-P+R KRA223S SOT-23 10

PS Matsushita Si-N-Darl 2SD1511-S SOT-89 11

PS Matsushita Si-N 2SD1821-S SOT-323 2 10

PS Matsushita Si-N 2SD2240-S SS Mini 1,6 10

PS Matsushita Si-N 2SD814-S SOT-23 10

PSs Siemens PIN-Di BAR64-06 SOT-23 10

PSs Siemens PIN-Di BAR64-06W SOT-323 2 10

PT Fagor Z-Di P6SMB-12CA DO-214AA 5 19

PT KEC Si-P+R KRA224S SOT-23 10

PT Matsushita Si-N 2SD1821-T SOT-323 2 10

PT Matsushita Si-N 2SD2240-T SS Mini 1,6 10

PT Matsushita Si-N 2SD814-T SOT-23 10

PT Sanyo Si-N 2SC4002 SOT-23 10

PT Sanyo Si-N 2SC4365 SOT-23 10

PTs Siemens PIN-Di BAR64-07 SOT-143 13

PP … PTs

http://www.serwis-elektroniki.com.pl/

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- 180 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

PPU Fagor Z-Di P6SMB-13C DO-214AA 5 19

PU KEC Si-P+R KRA225S SOT-23 10

PV Fagor Z-Di P6SMB-13CA DO-214AA 5 19

PV KEC Si-P+R KRA226S SOT-23 10

PV Sanyo PIN-Di 1SV294 SOT-23 10

PW Fagor Z-Di P6SMB-15C DO-214AA 5 19

PX Fagor Z-Di P6SMB-15CA DO-214AA 5 19

PY Fagor Z-Di P6SMB-16C DO-214AA 5 19

PY Hitachi MOS-P-FET-e* 2SJ363 SOT-89 11

PY KEC Si-N KTC4376-Y SOT-89 11

PY Sanyo Si-N 2SC3859 SOT-23 10

PY Toshiba Si-N 2SC2884-Y SOT-89 11

PZ Fagor Z-Di P6SMB-16CA DO-214AA 5 19

PZT2222 Philips Si-N PZT2222 SOT-223 16

PZT2222 Siemens Si-N PZT2222 SOT-223 16

PZT2222A Philips Si-N PZT2222A SOT-223 16

PZT2222A Siemens Si-N PZT2222A SOT-223 16

PZT2907 Philips Si-P PZT2907 SOT-223 16

PZT2907 Siemens Si-P PZT2907 SOT-223 16

PZT2907A Philips Si-P PZT2907A SOT-223 16

PZT2907A Siemens Si-P PZT2907A SOT-223 16

PZT3904 Philips Si-N PZT3904 SOT-223 16

PZT3904 Siemens Si-N PZT3904 SOT-223 16

PZT3906 Philips Si-P PZT3906 SOT-223 16

PZT3906 Siemens Si-P PZT3906 SOT-223 16

PZTA13 Philips Si-N-Darl PZTA13 SOT-223 16

PZTA13 Siemens Si-N-Darl PZTA13 SOT-223 16

PZTA14 Philips Si-N-Darl PZTA14 SOT-223 16

PZTA14 Siemens Si-N-Darl PZTA14 SOT-223 16

PZTA42 Philips Si-N PZTA42 SOT-223 16

PZTA42 Siemens Si-N PZTA42 SOT-223 16

PZTA43 Philips Si-N PZTA43 SOT-223 16

PZTA43 Siemens Si-N PZTA43 SOT-223 16

PZTA63 Philips Si-P-Darl PZTA63 SOT-223 16

PZTA63 Siemens Si-P-Darl PZTA63 SOT-223 16

PU … PZTA63

http://www.serwis-elektroniki.com.pl/

Page 190:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 181 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Q

PZTA64 Philips Si-P-Darl PZTA64 SOT-223 16

PZTA64 Siemens Si-P-Darl PZTA64 SOT-223 16

PZTA92 Philips Si-P PZTA92 SOT-223 16

PZTA92 Siemens Si-P PZTA92 SOT-223 16

PZTA93 Philips Si-P PZTA93 SOT-223 16

PZTA93 Siemens Si-P PZTA93 SOT-223 16

Q

Q Hitachi C-Di HVC202A SOD-523 1,3 19

Q Hitachi C-Di HVU202 (A) SOD-323 1,7 19

Q1 Rohm Si-N/P FMQ1 SOT-153 14

Q2 Motorola Si-N 2SC1321-Q2 SOT-23 10

Q2 NEC Si-N 2SC1321-Q2 SOT-23 10

Q2 Rohm Si-N/P FMQ2 SOT-153 14

Q2 Sanyo Si-N 2SC2813-Q2 SOT-23 10

Q3 KEC C-Di KDC251S SOT-23 10

Q3 Motorola Si-N 2SC1321-Q3 SOT-23 10

Q3 NEC Si-N 2SC1321-Q3 SOT-23 10

Q3 Sanyo Si-N 2SC2813-Q3 SOT-23 10

Q3 Valvo Si-N BFQ33C SOT-173 17

Q4 Motorola Si-N 2SC1321-Q4 SOT-23 10

Q4 NEC Si-N 2SC1321-Q4 SOT-23 10

Q4 Sanyo Si-P 2SA1331-04 SOT-23 10

Q4 Sanyo Si-N 2SC2813-Q4 SOT-23 10

Q5 Motorola Si-N 2SC1321-Q5 SOT-23 10

Q5 NEC Si-N 2SC1321-Q5 SOT-23 10

Q5 Sanyo Si-P 2SA1331-05 SOT-23 10

Q5 Sanyo Si-N 2SC2813-Q5 SOT-23 10

Q6 Sanyo Si-P 2SA1331-06 SOT-23 10

Q6 Valvo Si-N BFQ66 SOT-173 17

QA Hitachi Si-N 2SC2620-A SOT-23 10

QA NEC Si-N µPA673T SOT-363 2 15

QA Siliconix MOS-P-FET-e Si1903DL SOT-363 2 15

QA Toshiba Si-N+R RN1421 SOT-23 10

QAA Thomson Z-Di SMP30-62 DO-214AC 5×2,5 19

PZTA64 … QAA

http://www.serwis-elektroniki.com.pl/

Page 191:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 182 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Q

QAB Thomson Z-Di SMP30-68 DO-214AC 5×2,5 19

QAC Thomson Z-Di SMP30-100 DO-214AC 5×2,5 19

QAD Thomson Z-Di SMP30-120 DO-214AC 5×2,5 19

QAE Thomson Z-Di SMP30-130 DO-214AC 5×2,5 19

QAF Thomson Z-Di SMP30-180 DO-214AC 5×2,5 19

QAG Thomson Z-Di SMP30-200 DO-214AC 5×2,5 19

QAH Thomson Z-Di SMP30-220 DO-214AC 5×2,5 19

QAI Thomson Z-Di SMP30-240 DO-214AC 5×2,5 19

QAJ Thomson Z-Di SMP30-270 DO-214AC 5×2,5 19

QB Hitachi Si-N 2SC2620-B SOT-23 10

QB Siliconix MOS-P-FET-e Si1905DL SOT-363 2 15

QB Toshiba Si-N+R RN1422 SOT-23 10

QC Hitachi Si-N 2SC2620-C SOT-23 10

QC Siliconix MOS-P-FET-e Si1907DL SOT-363 2 15

QC Toshiba Si-N+R RN1423 SOT-23 10

QD Fagor Z-Di P6SMB-18C DO-214AA 5 19

QD Thomson Z-Di SM4T6V8 SOD-6 6×4 19

QD Toshiba Si-N+R RN1424 SOT-23 10

QE Fagor Z-Di P6SMB-18CA DO-214AA 5 19

QE Thomson Z-Di SM4T6V8A SOD-6 6×4 19

QE Toshiba Si-N+R RN1425 SOT-23 10

QF Fagor Z-Di P6SMB-20C DO-214AA 5 19

QF Thomson Z-Di SM4T7V5 SOD-6 6×4 19

QF Toshiba Si-N+R RN1426 SOT-23 10

QG Fagor Z-Di P6SMB-20CA DO-214AA 5 19

QG Thomson Z-Di SM4T7V5A SOD-6 6×4 19

QG Toshiba Si-N+R RN1427 SOT-23 10

QH Fagor Z-Di P6SMB-22C DO-214AA 5 19

QI- Hitachi Si-N 2SC4196 SOT-23 10

QI- Hitachi Si-N 2SC4261 SOT-323 2 10

QK Fagor Z-Di P6SMB-22CA DO-214AA 5 19

QK NEC Si-N 2SC2954 SOT-89 11

QL Fagor Z-Di P6SMB-24C DO-214AA 5 19

QL Sanyo Si-P 2SA1580 SOT-23 10

QM Fagor Z-Di P6SMB-24CA DO-214AA 5 19

QAB … QM

http://www.serwis-elektroniki.com.pl/

Page 192:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 183 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Q

QN Fagor Z-Di P6SMB-27C DO-214AA 5 19

QN Thomson Z-Di SM4T10 SOD-6 6×4 19

QO KEC Si-N KTC4080-O SOT-323 2 10

QO Sanyo Si-N 2SC2714-O SOT-23 10

QO Sanyo Si-N 2SC4215-O SOT-323 2 10

QO Toshiba Si-N 2SC4915-O SS Mini 1,6 10

QP Fagor Z-Di P6SMB-27CA DO-214AA 5 19

QP Thomson Z-Di SM4T10A SOD-6 6×4 19

QQ Fagor Z-Di P6SMB-30C DO-214AA 5 19

QQ NEC Si-N 2SC4536-QQ SOT-89 11

QQ NEC Si-N 2SC5337-QQ SOT-89 11

QR Fagor Z-Di P6SMB-30CA DO-214AA 5 19

QR KEC Si-N KTC4080-R SOT-323 2 10

QR NEC Si-N 2SC4536-QR SOT-89 11

QR NEC Si-N 2SC5337-QR SOT-89 11

QR Toshiba Si-N 2SC2714-R SOT-23 10

QR Toshiba Si-N 2SC4215-R SOT-323 2 10

QR Toshiba Si-N 2SC4915-R SS Mini 1,6 10

QS Fagor Z-Di P6SMB-33C DO-214AA 5 19

QS NEC Si-N 2SC4536-QS SOT-89 11

QS NEC Si-N 2SC5337-QS SOT-89 11

QS Thomson Z-Di SM4T12 SOD-6 6×4 19

QT Fagor Z-Di P6SMB-33CA DO-214AA 5 19

QT Sanyo Si-N 2SC4412 SOT-23 10

QT Thomson Z-Di SM4T12A SOD-6 6×4 19

QU Fagor Z-Di P6SMB-36C DO-214AA 5 19

QV Fagor Z-Di P6SMB-36CA DO-214AA 5 19

QV Sanyo PIN-Di 1SV298 SOT-143 13

QW Fagor Z-Di P6SMB-39C DO-214AA 5 19

QW Thomson Z-Di SM4T15 SOD-6 6×4 19

QX Fagor Z-Di P6SMB-39CA DO-214AA 5 19

QX Thomson Z-Di SM4T15A SOD-6 6×4 19

QY Fagor Z-Di P6SMB-43C DO-214AA 5 19

QY Hitachi MOS-N-FET-e 2SK2247 SOT-89 11

QY KEC Si-N KTC4080-Y SOT-323 2 10

QN … QY

http://www.serwis-elektroniki.com.pl/

Page 193:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 184 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

QY Sanyo Si-N 2SC3863 SOT-23 10

QY Sanyo Si-N 2SC4498 SOT-23 10

QY Toshiba Si-N 2SC2714-Y SOT-23 10

QY Toshiba Si-N 2SC4215-Y SOT-323 2 10

QY Toshiba Si-N 2SC4915-Y SS Mini 1,6 10

QZ Fagor Z-Di P6SMB-43CA DO-214AA 5 19

R

R Hitachi C-Di HVE358 SOD-523 1,3 19

R Hitachi C-Di HVU358 SOD-323 1,7 19

R Matsushita Si-N 2SC2480 SOT-23 10

R Matsushita Si-N 2SC3932 SOT-23 2 10

R Matsushita Si-N 2SD1280 SOT-89 11

R Matsushita Z-Di MAZS068 SOD-523 1,3 19

R01 Samsung Si-N+R KSR1101 SOT-23 10

R02 Samsung Si-N+R KSR1102 SOT-23 10

R03 Samsung Si-N+R KSR1103 SOT-23 10

R04 Samsung Si-N+R KSR1104 SOT-23 10

R05 Samsung Si-N+R KSR1105 SOT-23 10

R06 Samsung Si-N KSR1106 SOT-23 10

R07 Samsung Si-N+R KSR1107 SOT-23 10

R08 Samsung Si-N+R KSR1108 SOT-23 10

R09 Samsung Si-N+R KSR1109 SOT-23 10

R1 AEG Si-N BFR93 SOT-23 10

R1 Europa Si-N BFR93 SOT-23 10 BFR91

R1 General Si-P D71Y.8T1 SOT-89 11

R1 Motorola Si-N BFR93 SOT-23 10

R1 Siliconix MOS-N-FET-e TN2010T SOT-23 10

R1 Philips Si-N BFR93 SOT-23 10

R10 Samsung Si-N+R KSR1110 SOT-23 10

R11 Samsung Si-N+R KSR1111 SOT-23 10

R12 Samsung Si-N+R KSR1112 SOT-23 10

R13 NEC Si-N 2SC4885 SOT-323 2 10

R13 Samsung Si-N+R KSR1113 SOT-23 10

R14 Samsung Si-N+R KSR1114 SOT-23 10

QY … R14

http://www.serwis-elektroniki.com.pl/

Page 194:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 185 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

R1A Rohm Si-N MMST3904 SOT-23 10

R1A Rohm Si-N SST3904 SOT-23 10

R1A Rohm Si-N UMT3904 SOT-323 2 10

R1B Rohm Si-N MMST2222 SOT-23 10

R1B Rohm Si-N SST2222 SOT-23 10

R1C Rohm Si-N MMST1130 SOT-23 10

R1C Rohm Si-N MMSTA20 SOT-23 10

R1C Rohm Si-N SST1130 SOT-23 10

R1C Rohm Si-N SSTA20 SOT-23 10

R1G Rohm Si-N MMSTA06 SOT-23 10

R1G Rohm Si-N SSTA06 SOT-23 10

R1H Rohm Si-N SSTA05 SOT-23 10

R1J Rohm Si-N SST6427 SOT-23 10

R1K Rohm Si-N MMST6428 SOT-23 10

R1K Rohm Si-N SST6428 SOT-23 10

R1M Rohm Si-N-Darl 2SD2142K SOT-23 10

R1M Rohm Si-N-Darl MMSTA13 SOT-23 10

R1M Rohm Si-N-Darl SSTA13 SOT-23 10

R1N Rohm Si-N-Darl MMSTA14 SOT-23 10

R1N Rohm Si-N-Darl SSTA14 SOT-23 10

R1P Rohm Si-N MMST2222A SOT-23 10

R1P Rohm Si-N SST2222A SOT-23 10

R1P Rohm Si-N UMT2222A SOT-323 2 10

R1Q Rohm Si-N MMST5088 SOT-23 10

R1Q Rohm Si-N SST5088 SOT-23 10

R1R Rohm Si-N MMST5089 SOT-23 10

R1R Rohm Si-N SST5089 SOT-23 10

R2 Europa Si-N BFR93A SOT-23 10

R2 NEC Si-N 2SC2351-R2 SOT-23 10

R2 NEC Si-N 2SC4225-R2 SOT-23 10

R2 NEC Si-N 2SC4225-R2 SOT-323 2 10

R2 Philips Si-N BFR93AW SOT-323 2 10

R2 Siemens Si-N BFR93AW SOT-323 2 10

R2 AEG Si-N BFR93A SOT-23 10

R2 Philips Si-N BFR93A SOT-23 10

R1A … R2

http://www.serwis-elektroniki.com.pl/

Page 195:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 186 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

R2 Thomson Si-N BFR93A SOT-23 10

R22 NEC Si-N 2SC3356 SOT-23 10

R22 NEC Si-N 2SC4226-R22 SOT-323 2 10

R23 NEC Si-N 2SC3356-R23/Q SOT-23 10

R23 NEC Si-N 2SC4226-R23 SOT-323 2 10

R24 NEC Si-N µPA801T-FB SOT-363 2 15

R24 NEC Si-N 2SC3356-R24/R SOT-23 10

R24 NEC Si-N 2SC4226-R24 SOT-323 2 10

R24 Rohm Si-N MMST5424 SOT-23 10

R24 Rohm Si-N SST5424 SOT-23 10

R25 NEC Si-N µPA801T-GB SOT-363 2 15

R25 NEC Si-N 2SC3356-R25/S SOT-23 10

R25 NEC Si-N 2SC4226-R25 SOT-323 2 10

R26 NEC Si-N 2SC4093-R26/RBF SOT-143 13

R26 NEC Si-N 2SC5011-EB SOT-343 2 13

R27 NEC Si-N 2SC4093-R27/RBG SOT-143 13

R27 NEC Si-N 2SC5011-FB SOT-343 2 13

R28 NEC Si-N 2SC4093-R28/RBH SOT-143 13

R28 NEC Si-N 2SC5011-GB SOT-343 2 13

R2A Rohm Si-P MMST3906 SOT-23 10

R2A Rohm Si-P SST3906 SOT-23 10

R2A Rohm Si-P UMT3906 SOT-323 2 10

R2B Rohm Si-P MMST2907 SOT-23 10

R2B Rohm Si-P SST2907 SOT-23 10

R2C Rohm Si-P MMSTA70 SOT-23 10

R2C Rohm Si-P SSTA70 SOT-23 10

R2F Rohm Si-P MMST2907A SOT-23 10

R2F Rohm Si-P SST2907A SOT-23 10

R2F Rohm Si-P UMT2907A SOT-323 2 10

R2G Rohm Si-P MMSTA56 SOT-23 10

R2G Rohm Si-P SSTA56 SOT-23 10

R2H Rohm Si-P SSTA55 SOT-23 10

R2K Rohm Si-P MMST8598 SOT-23 10

R2K Rohm Si-P SST8598 SOT-23 10

R2P Rohm Si-P MMST5086 SOT-23 10

R2 … R2P

http://www.serwis-elektroniki.com.pl/

Page 196:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 187 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

R2P Rohm Si-P SST5086 SOT-23 10

R2Q Rohm Si-P MMST5087 SOT-23 10

R2Q Rohm Si-P MMST7157 SOT-23 10

R2Q Rohm Si-P SST5087 SOT-23 10

R2Q Rohm Si-P SST7157 SOT-23 10

R2s Siemens Si-N BFR93W SOT-323 2 10

R2T Rohm Si-P MMST4403 SOT-23 10

R2T Rohm Si-P SST4403 SOT-23 10

R2T Rohm Si-P UMT4403 SOT-323 2 10

R2U Rohm Si-P-Darl MMSTA63 SOT-23 10

R2U Rohm Si-P-Darl SSTA63 SOT-23 10

R2V Rohm Si-P-Darl MMSTA64 SOT-23 10

R2V Rohm Si-P-Darl SSTA64 SOT-23 10

R2X Rohm Si-N MMST4401 SOT-23 10

R2X Rohm Si-N SST4401 SOT-23 10

R2X Rohm Si-N UMT4401 SOT-323 2 10

R2Z Rohm Si-N SST4400 SOT-23 10

R3 NEC Si-N 2SC2351-R3 SOT-23 10

R3 NEC Si-N 2SC4225-R3 SOT-23 10

R3 NEC Si-N 2SC4225-R3 SOT-323 2 10

R3 Sanyo N-FET 2SK283-R3 SOT-23 10

R32 NEC Si-N 2SC4227-R32 SOT-323 2 10

R33 NEC Si-N 2SC3583-R33/Q SOT-23 10

R33 NEC Si-N 2SC4227-R33 SOT-323 2 10

R34 NEC Si-N µPA802T-FB SOT-363 2 15

R34 NEC Si-N 2SC3583-R34/R SOT-23 10

R34 NEC Si-N 2SC4227-R34 SOT-323 2 10

R35 NEC Si-N µPA802T-GB SOT-363 2 15

R35 NEC Si-N 2SC3583-R35/S SOT-23 10

R35 NEC Si-N 2SC4227-R35 SOT-323 2 10

R36 NEC Si-N 2SC4094-R36/RCF SOT-143 13

R36 NEC Si-N 2SC5012-EB SOT-343 2 13

R37 NEC Si-N 2SC4094-R37/RCG SOT-143 13

R37 NEC Si-N 2SC5012-FB SOT-343 2 13

R38 NEC Si-N 2SC4094-R38/RCH SOT-143 13

R2P … R38

http://www.serwis-elektroniki.com.pl/

Page 197:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

R38 NEC Si-N 2SC5012-GB SOT-343 2 13

R39 Rohm Si-N MMST1139 SOT-23 10

R39 Rohm Si-N SST1139 SOT-23 10

R3B Rohm Si-N MMST8245 SOT-23 10

R3B Rohm Si-N SST8245 SOT-23 10

R3B Rohm Si-N SST918 SOT-23 10

R3B Rohm Si-N UMT918 SOT-323 2 10

R4 AEG Si-N BFR93R SOT-23 10

R4 Europa Si-N BFR93R SOT-23 10 BFR91

R4 Fagor Si-Di FS1G DO-214AC 5 19

R4 NEC Si-N 2SC4092-R4/RD SOT-143 13

R4 Sanyo N-FET 2SK283-R4 SOT-23 10

R4 Thomson Si-N BFR93R SOT-23 10

R4 Valvo Si-N BFR93R SOT-23 10

R42 NEC Si-N 2SC4228-R42 SOT-323 2 10

R43 NEC Si-N 2SC3585-R43/Q SOT-23 10

R43 NEC Si-N 2SC4228-R43 SOT-323 2 10

R44 NEC Si-N 2SC3585-R44/R SOT-23 10

R44 NEC Si-N 2SC4228-R44 SOT-323 2 10

R4422R Motorola Si-Di MR4422CTR TO-3 6

R4422T Motorola Si-Di MR4422CT TO-3 6

R45 NEC Si-N 2SC3585-R45/S SOT-23 10

R45 NEC Si-N 2SC4228-R45 SOT-323 2 10

R46 NEC Si-N 2SC4095-R46/RDF SOT-143 13

R46 NEC Si-N 2SC5013-EB SOT-343 2 13

R47 NEC Si-N 2SC4095-R47/RDG SOT-143 13

R47 NEC Si-N 2SC5013-FB SOT-343 2 13

R48 NEC Si-N 2SC4095-R48/RDG SOT-143 13

R48 NEC Si-N 2SC5013-GB SOT-343 2 13

R5 AEG Si-N BFR93AR SOT-23 10

R5 Europa Si-N BFR93AR SOT-23 10 BFR91

R5 Fagor Si-Di FS1J DO-214AC 5 19

R5 NEC Si-N 2SC4092-R5/RE SOT-143 13

R5 Sanyo N-FET 2SK283-R5 SOT-23 10

R5 Thomson Si-N BFR93AR SOT-23 10

R38 … R5

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

R5 Valvo Si-N BFR93AR SOT-23 10

R51 Samsung Si-P+R KSR2101 SOT-23 10

R52 Samsung Si-P+R KSR2102 SOT-23 10

R53 Samsung Si-P+R KSR2103 SOT-23 10

R54 Samsung Si-P+R KSR2104 SOT-23 10

R55 Samsung Si-P+R KSR2105 SOT-23 10

R56 Samsung Si-P+R KSR2106 SOT-23 10

R57 Samsung Si-P+R KSR2107 SOT-23 10

R58 Samsung Si-P+R KSR2108 SOT-23 10

R59 Samsung Si-P+R KSR2109 SOT-23 10

R6 Fagor Si-Di FS1K DO-214AC 5 19

R6 Sanyo N-FET 2SK283-R6 SOT-23 10

R60 Samsung Si-P+R KSR2110 SOT-23 10

R61 Samsung Si-P+R KSR2111 SOT-23 10

R62 NEC Si-N 2SC3663(K/P) SOT-23 10

R62 Samsung Si-P+R KSR2112 SOT-23 10

R63 Samsung Si-P+R KSR2113 SOT-23 10

R64 Samsung Si-P+R KSR2114 SOT-23 10

R6A NEC Si-N 2SC4187-R6A SOT-323 2 10

R6B NEC Si-N 2SC4187-R6B SOT-323 2 10

R6C NEC Si-N 2SC4187-R6C SOT-323 2 10

R7 Fagor Si-Di FS1M DO-214AC 5 19

R7 Philips Si-N BFR106 SOT-23 10 2SC3356

R7 Siemens Si-N BFR106 SOT-23 10 2SC3356

R750 Motorola Si-Di MR750 (6×9mm) 9

R751 Motorola Si-Di MR751 (6×9mm) 9

R752 Motorola Si-Di MR752 (6×9mm) 9

R754 Motorola Si-Di MR754 (6×9mm) 9

R756 Motorola Si-Di MR756 (6×9mm) 9

R758 Motorola Si-Di MR758 (6×9mm) 9

R760 Motorola Si-Di MR760 (6×9mm) 9

R8 AEG Si-N BFG93A SOT-143 13 BFR91A

R8 Philips Si-N BFG93A SOT-143 13 BFR91A

R8 Valvo Si-N BFG93A SOT-143 13

R81 NEC Si-N µPA821TF SOT-363 2 15

R5 … R81

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

R83 NEC Si-N µPA826TF SOT-363 2 15

R84 NEC Si-N µPA827TF SOT-363 2 15

R850 Motorola Si-Di MR850 DO-27A 9

R851 Motorola Si-Di MR851 DO-27A 9

R852 Motorola Si-Di MR852 DO-27A 9

R854 Motorola Si-Di MR854 DO-27A 9

R856 Motorola Si-Di MR856 DO-27A 9

R86 NEC Si-N µPA828TF SOT-363 2 15

R9 Toshiba Si-Di 1SS392 SOT-23 10

R9 Toshiba Si-Di 1SS393 SOT-323 2 10

R93 Rohm Si-P SSTTIS93 SOT-23 10

R97 Rohm Si-P SSTTIS97 SOT-23 10

RA AEG Si-N BFQ81 SOT-23 10 BFQ29

RA NEC Si-N/P µPA674T SOT-363 2 15

RA Siliconix MOS-P-FET-e Si1553DL SOT-363 2 15

RA Toshiba Si-P+R RN2421 SOT-23 10

RA Siemens Si-N BF772 SOT-143 13 BFG520

RA Siemens Si-N BFQ81 SOT-23 10 BFQ29

RA1 Rohm Si-Di BAW56 SOT-23 10

RA4 Rohm Si-Di BAV70 SOT-23 10

RA6 Rohm Si-Di BAS16 SOT-23 10

RA7 Rohm Si-Di BAV99 SOT-23 10

RAF Rohm Si-N-Darl SSTA29 SOT-23 10

RAO Toshiba Si-N 2SC3718-O SOT-23 10

RAT Rohm Si-N-Darl MMSTA28 SOT-23 10

RAT Rohm Si-N-Darl SSTA28 SOT-23 10

RAV Rohm Si-N MMST8098 SOT-23 10

RAY Toshiba Si-N 2SC3718-Y SOT-23 10

RB Hitachi Si-N 2SC2618-B SOT-23 10

RB Siliconix MOS-P-FET-e Si1555DL SOT-363 2 15

RB Toshiba Si-P+R RN2422 SOT-23 10

RB Siemens Si-N BF771 SOT-23 10 BFR520

RBG Toshiba N-FET 2SK711-GR SOT-23 10

RBL Toshiba N-FET 2SK711-BL SOT-23 10

RBQ Rohm Si-N SST7208 SOT-23 10

R83 … RBQ

http://www.serwis-elektroniki.com.pl/

Page 200:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 191 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

RBR Rohm Si-N MMST6838 SOT-23 10

RBR Rohm Si-N SST6838 SOT-23 10

RBs Siemens Si-N BF771W SOT-323 2 10

RBV Toshiba N-FET 2SK711-V SOT-23 10

RC AEG Si-N BFR193T SOT-23 10

RC Hitachi Si-N 2SC2618-C SOT-23 10

RC Siemens Si-N BFP193 SOT-143 13

RC Siemens Si-N BFQ193 SOT-89 11 2SC3301

RC Toshiba Si-P+R RN2423 SOT-23 10

RC Toshiba Si-Di U1CL49 SOT-89 11

RC Siemens Si-N BFR193 SOT-23 10 BFR520

RCs Siemens Si-N BF193W SOT-323 2 10

RCs Siemens Si-N BFP193 SOT-23 10

RCs Siemens Si-N BFP193W SOT-343 2 13

RCs Siemens Si-N BFQ193 SOT-89 11

RCs Siemens Si-N BFR193 SOT-23 10

RD Hitachi Si-N 2SC2618-D SOT-23 10

RD Siemens Si-N BFP180 SOT-143 13

RD Siemens Si-N BFR180 SOT-23 10

RD Thomson Z-Di SM4T18 SOD-6 6×4 19

RD Toshiba Si-P+R RN2424 SOT-23 10

RD Toshiba Si-Di U1DL49 SOT-89 11

RD Siemens Si-N BFP193 SOT-143 13

RDs Siemens Si-N BFP180 SOT-143 13

RDs Siemens Si-N BFP180W SOT-343 2 13

RDs Siemens Si-N BFR180 SOT-23 10

RDs Siemens Si-N BFR180W SOT-323 2 10

RE AEG Si-N BFR280T SOT-23 10

RE NEC Si-N 2SC3357-RE SOT-89 11

RE NEC Si-N 2SC5336-RE SOT-89 11

RE Rohm Si-P 2SA1514K-E SOT-23 10

RE Rohm Si-P 2SA1579-E SOT-323 2 10

RE Siemens Si-N BFP280 SOT-143 13

RE Siemens Si-N BFR280 SOT-23 10

RE Thomson Z-Di SM4T18A SOD-6 6×4 19

RBR … RE

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

RE Toshiba Si-P+R RN2425 SOT-23 10

REs Siemens Si-N BFP280 SOT-143 13

REs Siemens Si-N BFP280W SOT-343 2 13

REs Siemens Si-N BFR280 SOT-23 10

REs Siemens Si-N BFR280W SOT-323 2 10

REs Siemens Si-N BFS480 SOT-363 2 15

RF AEG Si-N BFR181T SOT-23 10

RF NEC Si-N 2SC3357-RF SOT-89 11

RF NEC Si-N 2SC5336-RF SOT-89 11

RF Siemens Si-N BFP181 SOT-143 13

RF Siemens Si-N BFR181 SOT-23 10 BFR505

RF Toshiba Si-P+R RN2426 SOT-23 10

RFQ Rohm Si-P MMST6839 SOT-23 10

RFQ Rohm Si-P SST6839 SOT-23 10

RFs Siemens Si-N BFP181 SOT-143 13

RFs Siemens Si-N BFP181R SOT-143R 13

RFs Siemens Si-N BFP181W SOT-343 2 13

RFs Siemens Si-N BFR181 SOT-23 10

RFs Siemens Si-N BFR181W SOT-323 2 10 BFS505

RFs Siemens Si-N BFS481 SOT-363 2 15

RG AEG Si-N BFR182T SOT-23 10

RG Siemens Si-N BFP182 SOT-143 13

RG Siemens Si-N BFR182 SOT-23 10 BFQ67

RG Toshiba Si-P+R RN2427 SOT-23 10

RGs Siemens Si-N BFP182 SOT-143 13

RGs Siemens Si-N BFP182R SOT-143R 13

RGs Siemens Si-N BFP182W SOT-343 2 13

RGs Siemens Si-N BFR182 SOT-23 10

RGs Siemens Si-N BFR182W SOT-323 2 10

RGs Siemens Si-N BFS482 SOT-363 2 15

RH AEG Si-N BFR183T SOT-23 10

RH NEC Si-N 2SC3357-RH SOT-89 11

RH NEC Si-N 2SC5336-RH SOT-89 11

RH Siemens Si-N BFP183 SOT-143 13

RH Siemens Si-N BFR183 SOT-23 10 BFR193

RE … RH

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

RH Thomson Z-Di SM4T22 SOD-6 6×4 19

RHs Siemens Si-N BFP183 SOT-143 13

RHs Siemens Si-N BFP183R SOT-143R 13

RHs Siemens Si-N BFP183W SOT-343 2 13

RHs Siemens Si-N BFR183 SOT-23 10

RHs Siemens Si-N BFR183W SOT-323 2 10 BFS520

RHs Siemens Si-N BFS483 SOT-363 2 15

RI Siemens Si-N BFP196 SOT-143 13

RIs Siemens Si-N BFP196 SOT-143 13

RIs Siemens Si-N BFP196W SOT-343 2 13

RJ Sanyo MOS-N-FET-d 3SK263 SOT-143 13

RJ4 Sanyo MOS-N-FET-d 3SK263-4 SOT-143 13

RJ5 Sanyo MOS-N-FET-d 3SK263-5 SOT-143 13

RJ6 Sanyo MOS-N-FET-d 3SK263-6 SOT-143 13

RK Siemens Si-P BFP194 SOT-143 13

RK Siemens Si-P BFR194 SOT-23 10

RK Thomson Z-Di SM4T22A SOD-6 6×4 19

RKM Rohm MOS-N-FET-e* RK7002 SOT-23 10

RKs Siemens Si-P BFP194 SOT-143 13

RKs Siemens Si-P BFR194 SOT-23 10

RL NEC Si-N µPA800T SOT-363 2 15

RL Sanyo Si-P 2SA1563 SOT-23 10

RL Thomson Z-Di SM4T24 SOD-6 6×4 19

RM Thomson Z-Di SM4T24A SOD-6 6×4 19

RMs Siemens Si-N BFE182 SOT-143 13

RN Thomson Z-Di SM4T27 SOD-6 6×4 19

RNs Siemens Si-N BFE183 SOT-143 13

RO KEC Si-P KTA1664-O SOT-89 11

RO KEC Si-N KTC3879-O SOT-23 10

RO KEC Si-N KTC4079-O SOT-323 2 10

RO Toshiba Si-P 2SA1204-O SOT-89 11

RO Toshiba Si-N 2SC2715-O SOT-23 10

ROs Siemens Si-N BFE193 SOT-143 13

RP Thomson Z-Di SM4T27A SOD-6 6×4 19

RPs Siemens Si-N BFE196 SOT-143 13

RH … RPs

http://www.serwis-elektroniki.com.pl/

Page 203:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

R

RQ Matsushita Si-N 2SD1280-Q SOT-89 11

RQ Thomson Z-Di SM4T30 SOD-6 6×4 19

RR KEC Si-N KTC3879-R SOT-23 10

RR KEC Si-N KTC4079-R SOT-323 2 10

RR Matsushita Si-N 2SD1280-R SOT-89 11

RR Rohm Si-P 2SA1514K-R SOT-23 10

RR Rohm Si-P 2SA1579-R SOT-323 2 10

RR Thomson Z-Di SM4T30A SOD-6 6×4 19

RR Toshiba Si-N 2SC2715-R SOT-23 10

RS Matsushita Si-N 2SC2480-S SOT-23 10

RS Matsushita Si-N 2SC3932-S SOT-323 2 10

RS Matsushita Si-N 2SC4974-S (T Mini) ~10

RS Matsushita Si-N 2SD1280-S SOT-89 11

RS Rohm Si-P 2SA1514K-S SOT-23 10

RS Rohm Si-P 2SA1579-S SOT-323 2 10

RS Thomson Z-Di SM4T33 SOD-6 6×4 19

RSR Rohm Si-N SST5210 SOT-23 10

RT Matsushita Si-N 2SC2480-T SOT-23 10

RT Matsushita Si-N 2SC3932-T SOT-323 2 10

RT Matsushita Si-N 2SC4974-T (T Mini) ~10

RT Matsushita Si-N 2SD1280-T SOT-89 11

RT Sanyo Si-N 2SC4000 SOT-23 10

RT Sanyo Si-N 2SC4400 SOT-323 2 10

RT Sanyo Si-N 2SC4432 SOT-23 10

RT Thomson Z-Di SM4T33A SOD-6 6×4 19

RU Thomson Z-Di SM4T36 SOD-6 6×4 19

RV Thomson Z-Di SM4T36A SOD-6 6×4 19

RVY Rohm Si-N MMST918S SOT-23 10

RVY Rohm Si-N SST918S SOT-23 10

RVZ Rohm Si-P MMST4126 SOT-23 10

RVZ Rohm Si-P SST4126 SOT-23 10

RW Thomson Z-Di SM4T39 SOD-6 6×4 19

RX Thomson Z-Di SM4T39A SOD-6 6×4 19

RX7 Rohm Si-N SST6426 SOT-23 10

RY Hitachi MOS-P-FET-e* 2SJ361 SOT-89 11

RQ … RY

http://www.serwis-elektroniki.com.pl/

Page 204:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

S

RY KEC Si-P KTA1664-Y SOT-89 11

RY KEC Si-N KTC3879-Y SOT-23 10

RY KEC Si-N KTC4079-Y SOT-323 2 10

RY Sanyo Si-N 2SC3898 SOT-23 10

RY Sanyo Si-N 2SC5534 SOT-343 2 13

RY Sanyo Si-N 2SC5541 (SSFP) 1,4 10

RY Toshiba Si-P 2SA1204-Y SOT-89 11

RY Toshiba Si-N 2SC2715-Y SOT-23 10

RZC Rohm Si-N MMST4124 SOT-23 10

RZC Rohm Si-N SST4124 SOT-23 10

S

S Hitachi C-Di HVC359 SOD-523 1,3 19

S Hitachi C-Di HVU359 SOD-323 1,7 19

S Matsushita Si-N 2SC2405 SOT-23 10

S Matsushita Si-N 2SC3929 SOT-323 2 10

S Matsushita Si-N 2SD1483 SOT-89 11

S Matsushita Si-Di MA2S077 SOD-523 1,3 19

S0 Philips Si-Di 1PS76SB10 SOD-323 1,7 19

S0 Siliconix P-FET SST270 SOT-23 10

S1 Fagor Si-Di FS2A DO-214AA 5 19

S1 Ferranti Si-N BSV35A SOT-323 2 10

S1 Hitachi Si-Di HRU0103A SOD-323 1,7 19

S1 Rohm Si-P FMS1A SOT-153 14

S1 Rohm Si-P UMS1N SOT-353 2 14

S1 SGS C-Di BBY31 SOT-23 10 BB405G

S1 Siemens C-Di BBY31 SOT-23 10 BB405G

S1 Siemens GaAs-FET-IC CSY240 (MW-6) ~15

S1 Siliconix P-FET SST271 SOT-23 10

S1 Toshiba Si-Di 1SS239 2,7 19

S1 Philips Si-Di BBY31 SOT-23 10 BB405G

S1 Valvo Si-Di BBY31 SOT-23 10

S1 Zetex Si-Di BBY31 SOT-23 10

S10 Hitachi Si-Di HRW0502A SOT-23 10

S11 Hitachi Si-Di HRW0302A SOT-23 10

RY … S11

http://www.serwis-elektroniki.com.pl/

Page 205:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

S

S11 Philips Si-Di BAS11 SOD-91 9

S11 Thomson Si-Di STPS1H100A DO-214AC 5×2,5 19

S12 Philips Si-Di BAS12 SOD-91 9

S12 Philips C-Di BBY39 SOT-23 10

S12 Thomson Si-Di STPS120E SOT-223 16

S13 Hitachi Si-Di HSM125WK SOT-23 10

S13 Philips C-Di BBY42 SOT-23 10

S13 Siemens GaAs-Sensor KSY13 SOT-143 13

S13 Thomson Si-Di STPS130E SOT-223 16

S14 Hitachi Si-Di HSM126A SOT-23 10

S14 Philips C-Di BB901 SOT-23 10

S14 Thomson Si-Di STPS140E SOT-223 16

S15 Hitachi Si-Di HRW0702A SOT-23 10

S16 Hitachi Si-Di HRC0202A SOT-323 2 10

S16 Thomson Si-Di STPS160E SOT-223 16

S17 Hitachi Si-Di HRW0202A SOT-23 10

S18 Hitachi Si-Di HRW0202B SOT-23 10

s1A Siemens Si-N SMBT3904 SOT-23 10

s1A Siemens Si-N SMBT3904S SOT-363 2 15

S1A Siemens Si-N SXT3904 SOT-89 11

s1B Siemens Si-N SMBT2222 SOT-23 10

s1C Siemens Si-N SMBTA20 SOT-23 10 BC847

s1D Siemens Si-N SMBTA42 SOT-23 10

s1D Siemens Si-N SMBTA42M (SCT-595) ~12

S1D Siemens Si-N SXTA42 SOT-89 11

s1E Siemens Si-N SMBTA43 SOT-23 10

S1E Siemens Si-N SXTA43 SOT-89 11

s1G Siemens Si-N SMBTA06 SOT-23 10

s1G Siemens Si-N SMBTA06M (SCT-595) ~12

s1H Siemens Si-N SMBTA05 SOT-23 10

s1K Siemens Si-N SMBT6428 SOT-23 10

s1L Siemens Si-N SMBT6429 SOT-23 10

s1M Siemens Si-N SMBTA13 SOT-23 10 2SD1475

s1N Siemens Si-N SMBTA14 SOT-23 10 2SD1475

s1P Siemens Si-N SMBT2222A SOT-23 10

S11 … s1P

http://www.serwis-elektroniki.com.pl/

Page 206:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

S

s1V Siemens Si-N-Darl SMBT6427 SOT-23 10

S2 Fagor Si-Di FS2B DO-214AA 5 19

S2 Ferranti Si-N BFQ31 SOT-23 10

S2 Ferranti Si-N BSV35 SOT-323 2 10

S2 Hitachi Si-Di HSM112WK SOT-23 10

S2 NEC Si-P 2SA813-S2 SOT-23 10

S2 Philips C-Di BBY40 SOT-23 10 BB809

S2 Rohm Si-P FMS2A SOT-153 14

S2 Rohm Si-P UMS2N SOT-353 2 14

S2 Thomson Si-N BFQ31 SOT-23 10

S2 Toshiba Si-Di 1SS242 ~SOD-123 2,7 19

S2 Toshiba C-Di 1SS315 SOD-323 1,7 19

S2 Valvo Si-Di BBY40 SOT-23 10

S2 Zetex Si-Di BBY40 SOT-23 10

S22 Hitachi Si-Di HRF22 DO-214AC 5 19

S23 Thomson Si-Di STPS3L25S SOD-15 8×5 19

s2A Siemens Si-P SMBT3906 SOT-23 10

s2A Siemens Si-P SMBT3906S SOT-363 2 15

S2A Siemens Si-P SXT3906 SOT-89 11

s2B Siemens Si-P SMBT3907 SOT-23 10

s2C Siemens Si-P SMBTA70 SOT-23 10

s2D Siemens Si-P SMBTA92 SOT-23 10

s2D Siemens Si-P SMBTA92M (SCT-595) ~12

S2D Siemens Si-P SXTA92 SOT-89 11

s2E Siemens Si-P SMBTA93 SOT-23 10

S2E Siemens Si-P SXTA93 SOT-89 11

s2F Siemens Si-P SMBT2907A SOT-23 10

S2F Siemens Si-P SXT2907A SOT-89 11

s2G Siemens Si-P SMBTA56 SOT-23 10 BCX42

s2G Siemens Si-P SMBTA56M (SCT-595) ~12

s2H Siemens Si-P SMBTA55 SOT-23 10 BCW65

s2O Siemens Si-P SMBT5087 SOT-23 10

s2P Siemens Si-P SMBT5086 SOT-23 10

S2P Siemens Si-N SXT2222A SOT-89 11

S2P02 Motorola MOS-P-FET-e MMSF2P02E MDIP-8 23

s1V … S2P02

http://www.serwis-elektroniki.com.pl/

Page 207:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

S

s2U Siemens Si-P SMBTA63 SOT-23 10 BCV26

s2V Siemens Si-P SMBTA64 SOT-23 10 BCV46

S3 Fagor Si-Di FS2D DO-214AA 5 19

S3 Ferranti Si-N BFQ31R SOT-23 10

S3 Ferranti Si-N BSV36 SOT-323 2 10

S3 NEC Si-P 2SA813-S3 SOT-23 10

S3 Rohm Si-P FMS3 SOT-153 14

S3 Siemens C-Di BBY51 SOT-23 10

S3 Thomson Si-N BFQ31R SOT-23 10

S3 Toshiba Si-Di 1SS357 SOD-323 1,7 19

S3 Toshiba Si-Di 1SS369 SOD-523 1,3 19

S3 Toshiba Si-Di 1SS388 SOD-523 1,3 19

S30 NEC Si-P FP1A4A SOT-23 10

S30 Philips C-Di BB804-0 SOT-23 10

S31 NEC Si-P FP1L2Q SOT-23 10

S31 Philips C-Di BB804-1 SOT-23 10

S32 Hitachi Si-Di HRF32 DO-214AC 5 19

S32 NEC Si-P FP1A3M SOT-23 10

S32 Philips C-Di BB804-2 SOT-23 10

S32 Thomson Si-Di STPS320S SOD-15 8 19

S33 NEC Si-P FP1F3P SOT-23 10

S33 Philips C-Di BB804-3 SOT-23 10

S33 Thomson Si-Di STPS330S SOD-15 8 19

S34 NEC Si-P FP1L3N SOT-23 10

S34 Philips C-Di BB804-4 SOT-23 10

S34 Thomson Si-Di STPS340S SOD-15 8 19

S340 Thomson Si-Di STPS340B TO-252 8

S35 NEC Si-P FP1A4M SOT-23 10

S36 NEC Si-P FP1J3P SOT-23 10

S36 Thomson Si-Di STPS3L60S SOD-15 8×5 19

s3P Siemens Si-P/N SMBT3904PN SOT-363 2 15

S3P02 Motorola MOS-P-FET-e MMSF3P02HD MDIP-8 23

S3P02Z Motorola MOS-P-FET-e MMSF3P02Z MDIP-8 23

S3P03 Motorola MOS-P-FET-e MMSF3P03HD MDIP-8 23

S4 Fagor Si-Di FS2G DO-214AA 5 19

s2U … S4

http://www.serwis-elektroniki.com.pl/

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

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Odpowiednik

S

S4 Ferranti Si-N BFQ31A SOT-23 10

S4 Ferranti Si-N BSV37 SOT-323 2 10

S4 NEC Si-P 2SA813-S4 SOT-23 10

S4 Philips C-Di BBY62 SOT-143 13

S4 Rohm Si-P FMS4 SOT-153 14

S4 Sanyo Si-N 2SC3361-S4 SOT-23 10

S4 Shindengen Si-Di D1FS4 DO-214AC 5 19

S4 Siliconix P-FET SST174 SOT-23 10

S4 Thomson Si-N BFQ31A SOT-23 10

S4 Toshiba Si-Di 1SS367 SOD-323 1,7 19

S4 Toshiba Si-Di 1SS373 SOD-523 1,3 19

S4 Toshiba Si-Di 1SS389 SOD-523 1,3 19

S42N Shindengen Si-Di S1ZAS4 DIP-4 21

S46 Thomson Si-Di BAR46 SOT-23 10

S4A Origin Si-Di SM-1XSN4A (2,8×2,3) 9

S4P01 Motorola MOS-P-FET-e MMSF4P01HD MDIP-8 23

S4P01Z Motorola MOS-P-FET-e MMSF4P01Z MDIP-8 23

S5 Fagor Si-Di FS2J DO-214AA 5 19

S5 Ferranti Si-N BFQ31AR SOT-23 10

S5 Hitachi Si-Di HRW0203A SOT-23 10

S5 Sanyo Si-N 2SC3361-S5 SOT-23 10

S5 Siemens Si-Di BAT15-099 SOT-143

S5 Siemens C-Di BBY52 SOT-23 10

S5 Siliconix P-FET SST175 SOT-23 10

S5 Thomson Si-N BFQ31AR SOT-23 10

S5A (s5A) Siemens Si-Di SMBD6050 SOT-23 10

S5B (s5B) Siemens Si-Di SMBD6100 SOT-23 10

S5C (s5C) Siemens Si-Di SMBD7000 SOT-23 10

S5D (s5D) Siemens Si-Di SMBD914 SOT-23 10 1N914

S5H100 Thomson Si-Di STPS5H100B TO-252 8

S5N02 Motorola MOS-N-FET-e MMSF5N02HD MDIP-8 23

S5N03 Motorola MOS-N-FET-e MMSF5N03HD MDIP-8 23

S5N03Z Motorola MOS-N-FET-e MMSF5N03Z MDIP-8 23

S5s Siemens C-Di BBY52 SOT-23 10

S6 Fagor Si-Di FS2K DO-214AA 5 19

S4 … S6

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

S

S6 Hitachi Si-Di HRW0503A SOT-23 10

S6 Sanyo Si-N 2SC3361-S6 SOT-23 10

S6 Siemens Si-Di BAT15-099R SOT-143 13

S6 Siliconix P-FET SST176 SOT-23 10

S6 Philips N-FET BF510 SOT-23 10 BF410A

S7 Fagor Si-Di FS2M DO-214AA 5 19

S7 Hitachi Si-Di HSM109WK SOT-23 10

S7 Philips Si-Di 1PS76SB17 SOD-323 1,7 19

S7 Siemens Si-Di BAT114-099R SOT-143 13

S7 Siliconix P-FET SST177 SOT-23 10

S7 Philips N-FET BF511 SOT-23 10 BF410B

S7N03 Motorola MOS-N-FET-e MMSF7N03HD MDIP-8 23

S7s Siemens Si-Di BAT114-099 SOT-143 13

S7s Siemens C-Di BBY53 SOT-23 10

S8 Hitachi Si-Di HRW0703A SOT-23 10

S8 Siemens Si-Di BAT14-099R SOT-143 13

S8 Philips N-FET BF512 SOT-23 10 BF410C

S9 Siemens Si-Di BAT14-099 SOT-143 13

S9 Toshiba Si-Di 1SS394 SOT-23 10

S9 Toshiba Si-Di 1SS395 SOT-323 2 10

S9 Philips N-FET BF513 SOT-23 10 BF410D

SA KEC Si-N KTC4377-A SOT-89 11

SA Motorola MOS-FET BSS123 SOT-23 10 BSS119

SA Philips MOS-FET BSS123 SOT-23 10 BSS119

SA Siemens MOS-N-FET-e BSS123 SOT-23 10

SA Siemens MOS-FET BSS123 SOT-23 10 BSS119

SA Siemens Si-N SMBTA20 SOT-23 10

SA Toshiba Si-N 2SC2982-A SOT-89 11

SA Valvo MOS-N-FET-e BSS123 SOT-23 10

SA2 (sA2) Siemens Si-Di SMBD2836 SOT-23 10

SA3 (sA3) Siemens Si-Di SMBD2835 SOT-23 10

SA4 (sA4) Siemens Si-Di SMBD2838 SOT-23 10

SA5 (sA5) Siemens Si-Di SMBD2837 SOT-23 10

-SAA Zetex MOS-N-FET-e BSS123A SOT-23 10

SAs Siemens MOS-N-FET BSS123 SOT-23 10

S6 … SAs

http://www.serwis-elektroniki.com.pl/

Page 210:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

S

SB Hitachi Si-P 2SA1121-B SOT-23 10

SB KEC Si-N KTC4377-B SOT-89 11

SB Siemens MOS-FET BSS145 SOT-23 10 BST82

SB Siemens Si-N SMBT2222 SOT-23 10

SB Toshiba Si-N 2SC2982-B SOT-89 11

SBs Siemens MOS-N-FET-e BSS145 SOT-23 10

SC Hitachi Si-P 2SA1121-C SOT-23 10

SC KEC Si-N KTC4377-C SOT-89 11

SC Siemens Si-N SMBT2222A SOT-23 10

SC Toshiba Si-N 2SC2982-C SOT-89 11

SC3 Siemens Si-P SMBT4126 SOT-23 10

SCX Samsung Si-N KSC2881 SOT-89 11

SCZ Siemens Si-N SMBT4124 SOT-23 10

SD Hitachi Si-P 2SA1121-D SOT-23 10

SD KEC Si-N KTC4377-D SOT-89 11

SD Siemens MOS-N-FET BSS145 SOT-23 10

SD Siemens Si-P SMBT2907 SOT-23 10

SD Toshiba Si-N 2SC2982-D SOT-89 11

SDs Siemens MOS-N-FET-e BSS284 SOT-23 10

SDX Samsung Si-P KSA1201 SOT-89 11

SE NEC Si-N 2SC4703-SE SOT-89 11

SE NEC Si-N 2SC5338-SE SOT-89 11

SE Siemens Si-P SMBT2907A SOT-23 10

SEs Siemens MOS-N-FET-d BSS159 SOT-23 10

SF AEG C-Di BB804 SOT-23 10 BB404

SF NEC Si-N 2SC4703-SF SOT-89 11

SF NEC Si-N 2SC5338-SF SOT-89 11

SF Philips C-Di BB804 SOT-23 10 BB404

SF Siemens C-Di BB804 SOT-23 10 BB404

SF Siemens Si-N SMBTA13 SOT-23 10

SF Siemens MOS-P-FET-e SP0610T SOT-23 10 2SJ209

SF Toshiba Si-Di U1FWJ49 SOT-89 11

SF0 Siemens C-Di BB8040 SOT-23 10

SF1 Siemens C-Di BB8041 SOT-23 10

SF2 Siemens C-Di BB8042 SOT-23 10

SB … SF2

http://www.serwis-elektroniki.com.pl/

Page 211:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

S

SF3 Siemens C-Di BB8043 SOT-23 10

SF4 Siemens C-Di BB8044 SOT-23 10

SFs Siemens MOS-N-FET-d BSS169 SOT-23 10

SG AEG Si-N BFP182TRW SOT-343 2 13

SG KEC Si-P KTA2014-GR SOT-323 2 10

SG Sanyo Si-P 2SA1162-GR SOT-23 10

SG Siemens Si-N SMBTA14 SOT-23 10

SG Toshiba Si-P 2SA1586-G SOT-323 2 10

SG Toshiba Si-P 2SA1618-GR SOT-153 14

SG Toshiba Si-P 2SA1832-G SS Mini 1,6 10

SG Toshiba Si-P 2SA1873-GR SOT-353 2 14

SG Toshiba Si-Di U1GWJ49 SOT-89 11

SG, SSG Siemens MOS-N-FET-e SN7002 SOT-23 10

SGX Samsung Si-P KSA1203 SOT-89 11

SH AEG C-Di BB814 SOT-23 10 BB404

SH NEC Si-N 2SC4703-SH SOT-89 11

SH NEC Si-N 2SC5338-SH SOT-89 11

SH Siemens C-Di BB814 SOT-23 10 BB404

SH Siemens MOS-N-FET-e BSS119 SOT-23 10

SH Siemens MOS-FET BSS119 SOT-23 10 BSS123

SH1 Siemens C-Di BB814-1 SOT-23 10

SH2 Siemens C-Di BB814-2 SOT-23 10

SHX Samsung Si-N KSC2883 SOT-89 11

SI Toshiba Si-Di U1GWJ2C49 SOT-89 11

SJ Sanyo MOS-N-FET-d 3SK264 SOT-143 13

SJ Siemens Si-P SMBTA92 SOT-23 10

SJ5 Sanyo MOS-N-FET-d 3SK264-5 SOT-143 13

SJ6 Sanyo MOS-N-FET-d 3SK264-6 SOT-143 13

SK NEC Si-N 2SC3554-SK SOT-89 11

SK Siemens Si-P SMBTA93 SOT-23 10

SL NEC Si-N 2SC3554-SL SOT-89 11

SL Sanyo Si-P 2SA1571 SOT-23 10

SL Siemens Si-N SMBTA42 SOT-23 10

SLX Samsung Si-P KSB798 SOT-89 11

SM NEC Si-N 2SC3554-SM SOT-89 11

SF3 … SM

http://www.serwis-elektroniki.com.pl/

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Code

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

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Equivalence

Odpowiednik

S

SM Rohm Si-N 2SC3082K-M SOT-23 10

SM Rohm Si-N 2SC4100-M SOT-323 2 10

SM Rohm Si-N 2SC4619-M SS Mini 1,6 10

SM Siemens Si-N SMBTA43 SOT-23 10

SMA10APH Philips Z-Di PSMA10A SOD-106 5×2,5 19

SMA11APH Philips Z-Di PSMA11A SOD-106 5×2,5 19

SMA12APH Philips Z-Di PSMA12A SOD-106 5×2,5 19

SMA13APH Philips Z-Di PSMA13A SOD-106 5×2,5 19

SMA14APH Philips Z-Di PSMA14A SOD-106 5×2,5 19

SMA15APH Philips Z-Di PSMA15A SOD-106 5×2,5 19

SMA16APH Philips Z-Di PSMA16A SOD-106 5×2,5 19

SMA17APH Philips Z-Di PSMA17A SOD-106 5×2,5 19

SMA18APH Philips Z-Di PSMA18A SOD-106 5×2,5 19

SMA20APH Philips Z-Di PSMA20A SOD-106 5×2,5 19

SMA22APH Philips Z-Di PSMA22A SOD-106 5×2,5 19

SMA24APH Philips Z-Di PSMA24A SOD-106 5×2,5 19

SMA25BPH Philips Z-Di PSMA5925B SOD-106 5×2,5 19

SMA26APH Philips Z-Di PSMA26A SOD-106 5×2,5 19

SMA26BPH Philips Z-Di PSMA5926B SOD-106 5×2,5 19

SMA27BPH Philips Z-Di PSMA5927B SOD-106 5×2,5 19

SMA28APH Philips Z-Di PSMA28A SOD-106 5×2,5 19

SMA28BPH Philips Z-Di PSMA5928B SOD-106 5×2,5 19

SMA29BPH Philips Z-Di PSMA5929B SOD-106 5×2,5 19

SMA30APH Philips Z-Di PSMA30A SOD-106 5×2,5 19

SMA30BPH Philips Z-Di PSMA5930B SOD-106 5×2,5 19

SMA31BPH Philips Z-Di PSMA5931B SOD-106 5×2,5 19

SMA32BPH Philips Z-Di PSMA5932B SOD-106 5×2,5 19

SMA33APH Philips Z-Di PSMA33A SOD-106 5×2,5 19

SMA33BPH Philips Z-Di PSMA5933B SOD-106 5×2,5 19

SMA34BPH Philips Z-Di PSMA5934B SOD-106 5×2,5 19

SMA35BPH Philips Z-Di PSMA5935B SOD-106 5×2,5 19

SMA36APH Philips Z-Di PSMA36A SOD-106 5×2,5 19

SMA36BPH Philips Z-Di PSMA5936B SOD-106 5×2,5 19

SMA37BPH Philips Z-Di PSMA5937B SOD-106 5×2,5 19

SMA38BPH Philips Z-Di PSMA5938B SOD-106 5×2,5 19

SM … SMA38BPH

http://www.serwis-elektroniki.com.pl/

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Manufact.

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Case

Obudowa

Dim.

Wymiary

Fig.

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Equivalence

Odpowiednik

S

SMA39BPH Philips Z-Di PSMA5939B SOD-106 5×2,5 19

SMA40APH Philips Z-Di PSMA40A SOD-106 5×2,5 19

SMA40BPH Philips Z-Di PSMA5940B SOD-106 5×2,5 19

SMA41BPH Philips Z-Di PSMA5941B SOD-106 5×2,5 19

SMA42BPH Philips Z-Di PSMA5942B SOD-106 5×2,5 19

SMA43APH Philips Z-Di PSMA43A SOD-106 5×2,5 19

SMA43BPH Philips Z-Di PSMA5943B SOD-106 5×2,5 19

SMA44BPH Philips Z-Di PSMA5944B SOD-106 5×2,5 19

SMA45APH Philips Z-Di PSMA45A SOD-106 5×2,5 19

SMA45BPH Philips Z-Di PSMA5945B SOD-106 5×2,5 19

SMA48APH Philips Z-Di PSMA48A SOD-106 5×2,5 19

SMA51APH Philips Z-Di PSMA51A SOD-106 5×2,5 19

SMA54APH Philips Z-Di PSMA54A SOD-106 5×2,5 19

SMA58APH Philips Z-Di PSMA58A SOD-106 5×2,5 19

SMA60APH Philips Z-Di PSMA60A SOD-106 5×2,5 19

SMA64APH Philips Z-Di PSMA64A SOD-106 5×2,5 19

SMA70APH Philips Z-Di PSMA70A SOD-106 5×2,5 19

SMA75APH Philips Z-Di PSMA75A SOD-106 5×2,5 19

SMA78APH Philips Z-Di PSMA78A SOD-106 5×2,5 19

SMA8.5PH Philips Z-Di PSMA8.5A SOD-106 5×2,5 19

SMA9.5PH Philips Z-Di PSMA9.5A SOD-106 5×2,5 19

SMs Siemens C-Di BB914 SOT-23 10

SN Rohm Si-N 2SC3082K-N SOT-23 10

SN Rohm Si-N 2SC4100-N SOT-323 2 10

SN Rohm Si-N 2SC4619-N SS Mini 1,6 10

SN Siemens Si-N SMBT3904 SOT-23 10

SN Thomson Z-Di SM4T68 SOD-6 6×4 19a

SN4 Origin Si-Di SM-1,5SN4 ~DO-27 9

SN4 Origin Si-Di SM-1XSN4 (2,8×2,3) 9

SO KEC Si-P KTA2014-O SOT-323 2 10

SO Siemens Si-P SMBT3906 SOT-23 10

SO Toshiba Si-P 2SA1162-O SOT-23 10

SO Toshiba Si-P 2SA1586-O SOT-323 2 10

SO Toshiba Si-P 2SC1832-O SS Mini 1,6 10

Sp Philips C-Di BA582 SOD-123 2,7 19

SMA39BPH … Sp

http://www.serwis-elektroniki.com.pl/

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Manufact.

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Odpowiednik

S

SP Rohm Si-N 2SC3082K-P SOT-23 10

SP Rohm Si-N 2SC4100-P SOT-323 2 10

SP Rohm Si-N 2SC4619-P SS Mini 1,6 10

SP Thomson Z-Di SM4T68A SOD-6 6×4 19

SP, Sp Philips MOS-P-FET-e BSS84 SOT-23 10 2SJ185

SP, Sp Siemens MOS-P-FET-e BSS84 SOT-23 10 2SJ185

SPs Siemens MOS-P-FET-e BSS84 SOT-23 10

SQ Rohm Si-N 2SC3082K-Q SOT-23 10

SQ Rohm Si-N 2SC4100-Q SOT-323 2 10

SQ Rohm Si-N 2SC4619-Q SS Mini 1,6 10

SR Matsushita Si-N 2SC2405-R SOT-23 10

SR Matsushita Si-N 2SC3929-R SOT-323 2 10

SR Philips MOS-N-FET-e BSS131 SOT-23 10

SR Siemens MOS-N-FET-e BSS131 SOT-23 10

SR Thomson Z-Di SMAJ170A DO-214AC 5×2,5 19

SR Valvo MOS-N-FET-e BSS131 SOT-23 10

SRs Siemens MOS-N-FET-e BSS131 SOT-23 10

SS Matsushita Si-N 2SC2405-S SOT-23 10

SS Matsushita Si-N 2SC3929-S SOT-323 2 10

SS Philips MOS-N-FET-e BSS138 SOT-23 10 BSS145

SS Siemens MOS-N-FET-e BSS138 SOT-23 10 BSS145

SS Thomson Z-Di SMA170CA DO-214AC 5×2,5 19

SS Valvo MOS-N-FET-e BSS138 SOT-23 10 BSS145

SS100 Siemens MOS-N-FET-e BSS100 TO-92 1

SS101 Siemens MOS-N-FET-e BSS101 TO-92 1

SS110 Siemens MOS-P-FET-e BSS110 TO-92 1

SS124 Siemens MOS-N-FET-e BSS124 TO-92 1

SS125 Siemens MOS-N-FET-e BSS125 TO-92 1

SS129 Siemens MOS-N-FET-d BSS129 TO-92 1

SS135 Siemens MOS-N-FET-d BSS135 TO-92 1

SS149 Siemens MOS-N-FET-d BSS149 TO-92 1

SS229 Siemens MOS-N-FET-d BSS229 TO-92 1

SS295 Siemens MOS-N-FET-e BSS295 TO-92 1

SS296 Siemens MOS-N-FET-e BSS296 TO-92 1

SS297 Siemens MOS-N-FET-e BSS297 TO-92 1

SP … SS297

http://www.serwis-elektroniki.com.pl/

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Manufact.

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Odpowiednik

T

SS88 Siemens MOS-N-FET-e BSS88 TO-92 1

SS89 Siemens MOS-N-FET-e BSS89 TO-92 1

SS92 Siemens MOS-P-FET-e BSS92 TO-92 1

SS98 Siemens MOS-N-FET-e SBS98 TO-92 1

sSJ Siemens MOS-N-FET-e BSS7728 SOT-23 10

SSs Siemens MOS-N-FET-e BSS138 SOT-23 10

SSX Samsung Si-N KSC2982 SOT-89 11

ST Matsushita Si-N 2SC2405-T SOT-23 10

ST Matsushita Si-N 2SC3929-T SOT-323 2 10

ST Sanyo Si-N 2SC4452 SOT-323 2 10

ST Sanyo Si-N 2SC4453 SOT-23 10

ST Siemens MOS-N-FET-d BSS139 SOT-23 10

SW Thomson Z-Di SM4T100 SOD-6 6×4 19

SX Thomson Z-Di SM4T100A SOD-6 6×4 19

SY KEC Si-P KTA2014-Y SOT-323 2 10

SY Sanyo Si-N 2SC3900 SOT-23 10

SY Toshiba Si-P 2SA1162-Y SOT-23 10

SY Toshiba Si-P 2SA1586-Y SOT-323 2 10

SY Toshiba Si-P 2SA1618-Y SOT-153 14

SY Toshiba Si-P 2SA1832-Y SS Mini 1,6 10

SY Toshiba Si-P 2SA1873-Y SOT-353 2 14

SYX Samsung Si-N KSD1621 SOT-89 11

sZC Siemens Si-N SMBT4124 SOT-23 10

SZX Samsung Si-P KSB1121 SOT-89 11

T

T Hitachi GaAs-N-FET 2SK1615 SOT-173 17

T Hitachi Si-Di HSU83 SOD-323 1,7 19

T Matsushita Si-N 2SC2406 SOT-23 10

T Matsushita Si-N 2SC3929A SOT-323 2 10

T Matsushita Si-N 2SD1119 SOT-89 11

T Matsushita Si-Di MA2S374 SOD-523 1,3 19

T Sanyo N-FET 2SK1065 SOT-23 10

T0 Siliconix MOS-N-FET-e TN0610T SOT-23 10

T01 Thomson Si-Di STTA106U DO-214AA 5×3,5 19

SS88 … T01

http://www.serwis-elektroniki.com.pl/

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Manufact.

Producent

Device

Opis

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Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

t02 Philips Si-N+R PDTC143EU SC-70 2 10

t03 Philips Si-P+R PDTA114EU SC-70 2 10

T03 Thomson Si-Di STTA112U DO-214AA 5×3,5 19

t05 Philips Si-P+R PDTA124EU SC-70 2 10

t06 Philips Si-N+R PDTC124EU SC-70 2 10

t07 Philips Si-P+R PDTA144EU SC-70 2 10

t08 Philips Si-N+R PDTC144EU SC-70 2 10

t09 Philips Si-N+R PDTC114EU SC-70 2 10

T1 Hitachi Si-N 2SC5136 SS Mini 1,6 10

T1 Hitachi C-Di HVM89 SOT-23 10

T1 Rohm Si-P IMT1A SOT-163 15

T1 Rohm Si-P UMT1N SOT-363 2 15

T1 SGS Si-P BCX17 SOT-23 10 BC327

T1 Toshiba C-Di 1SV153 ~SOD-123 2,7 19

T1 Toshiba C-Di 1SV214 SOD-323 1,7 19

T1 Toshiba C-Di 1SV254 SOD-523 1,3 19

T1 Ferranti Si-P BCX17 SOT-23 10

T1 Motorola Si-P BCX17 SOT-23 10

T1 Philips Si-P BCX17 SOT-23 10 BC327

T1048 Zetex Si-N ZDT1048 MDIP-8 23

T1049 Zetex Si-N ZDT1049 MDIP-8 23

T1053 Zetex Si-N ZDT1053 MDIP-8 23

T11 Hitachi C-Di HVM17WA SOT-23 10

T11 Zetex Si-N ZUMTQ31 SOT-323 2 10

T12 Hitachi C-Di HVM100 SOT-23 10

T12 NEC Si-N 2SC2755-T12 SOT-23 10

T12N20DX Zetex MOS-N-FET-e ZXT12N20DX SSMDIP-8 23

T12N50DX Zetex MOS-N-FET-e ZXT12N50DX SSMDIP-8 23

T12P12DX Zetex MOS-P-FET-e ZXT12P12DX SSMDIP-8 23

T12P20DX Zetex MOS-P-FET-e ZXT12P20DX SSMDIP-8 23

T12P40DX Zetex MOS-P-FET-e ZXT12P40DX SSMDIP-8 23

T13 NEC Si-N 2SC2755-T13 SOT-23 10

T13 Zetex Si-N ZUMT413 SOT-323 2 10

T14 NEC Si-N 2SC2755-T14 SOT-23 10

T14 Zetex Si-N ZUMT848B SOT-323 2 10

t02 … T14

http://www.serwis-elektroniki.com.pl/

Page 217:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

T14N20DX Zetex MOS-N-FET-e ZXT14N20DX SSMDIP-8 23

T14N50DX Zetex MOS-N-FET-e ZXT14N50DX SSMDIP-8 23

T14P12DX Zetex MOS-P-FET-e ZXT14P12DX SSMDIP-8 23

T14P20DX Zetex MOS-P-FET-e ZXT14P20DX SSMDIP-8 23

T14P40DX Zetex MOS-P-FET-e ZXT14P40DX SSMDIP-8 23

T15 Zetex Si-P ZUMT2907A SOT-323 2 10

T16 Zetex Si-P ZUMT2222A SOT-323 2 10

T17 Rohm Si-P IMT17 SOT-163 15

T19 Zetex Si-P ZUMT858B SOT-323 2 10

t1A Philips Si-N PMST3904 SOT-323 2 10

t1B Philips Si-N PMST2222 SOT-323 2 10

T1B Zetex Si-N ZUMT850B SOT-323 2 10

t1D Philips Si-N PMSTA42 SOT-323 2 10

T1E NEC Si-N 2SC5408-FB SOT-363 15

t1E Philips Si-N PMSTA43 SOT-323 2 10

t1F Philips Si-N PMST5550 SOT-323 2 10

t1G Philips Si-N PMSTA06 SOT-323 2 10

t1H Philips Si-N PMSTA05 SOT-323 2 10

t1J Philips Si-N PMST2369 SOT-323 2 10

t1K Philips Si-N PMST6428 SOT-323 2 10

t1L Philips Si-N PMST6429 SOT-323 2 10

t1P Philips Si-N PMST2222A SOT-323 2 10

t1Q Philips Si-N PMST5088 SOT-323 2 10

t1R Philips Si-N PMST5089 SOT-323 2 10

T2 Hitachi Si-Di HVM15 SOT-23 10

T2 Rohm Si-P IMT2A SOT-163 15

T2 Rohm Si-P UMT2N SOT-363 2 15

T2 Sanyo N-FET 2SK242-T2 SOT-23 10

T2 SGS Si-P BCX18 SOT-23 10 BC328

T2 Siliconix MOS-N-FET-e TN2460T SOT-23 10

T2 Toshiba C-Di 1SV161 ~SOD-123 2,7 19

T2 Toshiba C-Di 1SV215 SOD-323 1,7 19

T2 Ferranti Si-P BCX18 SOT-23 10

T2 Motorola Si-P BCX18 SOT-23 10

T2 Philips Si-P BCX18 SOT-23 10 BC328

T14N20DX … T2

http://www.serwis-elektroniki.com.pl/

Page 218:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

T20 Zetex Si-N ZUMT2369A SOT-323 2 10

T21 Zetex Si-N ZUMT850B SOT-323 2 10

T22 NEC Si-N 2SC2756-T22 SOT-23 10

T22 Thomson Si-Di STPS220CE SOT-223 16

T22 Zetex Si-P ZUMT860B SOT-323 2 10

T23 NEC Si-N 2SC2756-T23 SOT-23 10

t23 Philips Si-P+R PDTA114TU SC-70 2 10

T23 Thomson Si-Di STPS230CE SOT-223 16

T23 Zetex Si-N ZUMT817-40 SOT-323 2 10

T24 NEC Si-N 2SC2756-T24 SOT-23 10

t24 Philips Si-N+R PDTC114TU SC-70 2 10

T24 Thomson Si-Di STPS240CE SOT-223 16

T24 Zetex Si-P ZUMT807-40 SOT-323 2 10

T26 Thomson Si-Di STPS260CE SOT-223 16

t2A Philips Si-P PMST3906 SOT-323 2 10

T2B Zetex Si-N ZUMT860B SOT-323 2 10

t2D Philips Si-P PMSTA92 SOT-323 2 10

t2E Philips Si-P PMSTA93 SOT-323 2 10

t2F Philips Si-P PMST2907A SOT-323 2 10

t2G Philips Si-P PMSTA56 SOT-323 2 10

t2H Philips Si-P PMSTA57 SOT-323 2 10

t2L Philips Si-P PMST5401 SOT-323 2 10

t2T Philips Si-P PMST4403 SOT-323 2 10

t2X Philips Si-N PMST4401 SOT-323 2 10

T3 Ferranti Si-P BSS63 SOT-23 10

T3 Hitachi C-Di HVM16 SOT-23 10

T3 Motorola Si-P BSS63 SOT-23 10

T3 Philips Si-P BSS63 SOT-23 10 BSS68

T3 Rohm Si-P IMT3A SOT-163 15

T3 Rohm Si-P UMT3N SOT-363 2 15

T3 Sanyo N-FET 2SK1065-3 SOT-323 2 10

T3 Sanyo N-FET 2SK242-T3 SOT-23 10

T3 Siemens Si-P BSS63 SOT-23 10 BSS68

T3 Toshiba C-Di 1SV186 ~SOD-323 2,7 19

T3 Toshiba C-Di 1SV245 SOD-323 1,7 19

T20 … T3

http://www.serwis-elektroniki.com.pl/

Page 219:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

T3 Toshiba C-Di 1SV261 SOD-523 1,3 19

T3 Valvo Si-P BSS63 SOT-23 10

T3 Zetex Si-N ZUMTS20 SOT-323 2 10

T32 NEC Si-N 2SC2757-T32 SOT-23 10

T32 NEC Si-N 2SC4182-T32 SOT-323 2 10

T33 NEC Si-N 2SC2757-T33 SOT-23 10

T33 NEC Si-N 2SC4182-T33 SOT-323 2 10

T34 NEC Si-N 2SC2757-T34 SOT-23 10

T34 NEC Si-N 2SC4182-T34 SOT-323 2 10

T35 National Si-P BSR20 SOT-23 10 2N5400

T35 Philips Si-P BSR20 SOT-23 10 2N5400

T36 National Si-P BSR20A SOT-23 10 2N5401

T36 Philips Si-P BSR20A SOT-23 10 2N5401

T4 Ferranti Si-P BCX17R SOT-23 10

T4 Hitachi C-Di HVM11 SOT-23 10

T4 Philips Si-P BCX17R SOT-23 10 BC327

T4 Rohm Si-P IMT4 SOT-163 15

T4 Sanyo N-FET 2SK1065-4 SOT-323 2 10

T4 Sanyo N-FET 2SK242-T4 SOT-23 10

T4 SGS Si-P BCX17R SOT-23 10 BC327

T4 Toshiba C-Di 1SV204 ~SOD-123 2,7 19

T4 Toshiba C-Di 1SV216 SOD-323 1,7 19

T4 Toshiba C-Di 1SV256 SOD-523 1,3 19

T4 Valvo Si-P BCX17R SOT-23 10

T4 Zetex Si-N ZUMTS17 SOT-323 2 10

T42 NEC Si-N 2SC3545-M/P SOT-23 10

T42 NEC Si-N 2SC4184-T42 SOT-323 2 10

T43 NEC Si-N 2SC3545-L/Q SOT-23 10

T43 NEC Si-N 2SC4184-T43 SOT-323 2 10

T44 NEC Si-N 2SC3545-K/R SOT-23 10

T44 NEC Si-N 2SC4184-T44 SOT-323 2 10

T4H Zetex Si-N ZUMTS17H SOT-323 2 10

T5 Ferranti Si-P BCX18R SOT-23 10

T5 Hitachi C-Di HVB27WK SOT-323 2 10

T5 Hitachi C-Di HVM27WK SOT-23 10

T3 … T5

http://www.serwis-elektroniki.com.pl/

Page 220:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

T5 Philips Si-P BCX18R SOT-23 10 BC328

T5 Rohm Si-P IMT5A SOT-163 15

T5 Sanyo N-FET 2SK1065-5 SOT-323 2 10

T5 Sanyo N-FET 2SK242-T5 SOT-23 10

T5 SGS Si-P BCX18R SOT-23 10 BC328

T5 Toshiba C-Di 1SV153A ~SOD-123 2,7 19

T5 Valvo Si-P BCX18R SOT-23 10

T5 Zetex Si-N ZUMT918 SOT-323 2 10

T50 Supertex MOS-P-FET-e TP0610T SOT-23 10

T51 Thomson Si-Di STTA206S SOD-15 8×5 19

T6 Ferranti Si-P BSS63R SOT-23 10

T6 Hitachi C-Di HVM17 SOT-23 10

T6 Motorola Si-P BSS63R SOT-23 10

T6 Philips Si-P BSS63R SOT-23 10

T6 Siemens Si-P BSS63R SOT-23 10

T6 Thomson Si-P BSS63R SOT-23 10

T6 Toshiba C-Di 1SV211 ~SOD-123 2,7 19

T6 Toshiba C-Di 1SV217 SOD-323 1,7 19

T6 Zetex Si-N ZUMT5179 SOT-323 2 10

T605 Zetex Si-N-Darl ZDT605 MDIP-8 23

T61 Zetex Si-N ZUMT617 SOT-323 2 10

T617 Zetex Si-N ZDT617 MDIP-8 23

T619 Zetex Si-N ZDT619 MDIP-8 23

T62 NEC Si-N 2SC3841-T62/P SOT-23 10

T62 NEC Si-N 2SC4186-T62 SOT-323 2 10

T62 Zetex Si-N ZUMT618 SOT-323 2 10

T63 NEC Si-N 2SC3841-T63/Q SOT-23 10

T63 NEC Si-N 2SC4186-T63 SOT-323 2 10

T63 Zetex Si-N ZUMT619 SOT-323 2 10

T64 NEC Si-N 2SC3841-T64/R SOT-23 10

T64 NEC Si-N 2SC4186-T64 SOT-323 2 10

T649 Zetex Si-N ZDT649 MDIP-8 23

T651 Zetex Si-N ZDT651 MDIP-8 23

T6702 Zetex Si-N+P-Darl ZDT6702 MDIP-8 23

T6705 Zetex Si-N+P-Darl ZDT6705 MDIP-8 23

T5 … T6705

http://www.serwis-elektroniki.com.pl/

Page 221:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

T6718 Zetex Si-N+P ZDT6718 MDIP-8 23

T6753 Zetex Si-N+P ZDT6753 MDIP-8 23

T6757 Zetex Si-N+P ZDT6757 MDIP-8 23

T6790 Zetex Si-N+P MDIP-8 23

T690 Zetex Si-N ZDT690 MDIP-8 23

T694 Zetex Si-N ZDT694 MDIP-8 23

T7 National Si-P BSR15 SOT-23 23 2N2907

T7 Siliconix N-FET SST4117 SOT-23 10

T7 Toshiba C-Di 1SV224 SOD-123 2,7 19

T7 Toshiba C-Di 1SV230 SOD-323 1,7 19

T7 Toshiba C-Di 1SV258 SOD-523 1,3 19

T7 Zetex Si-N ZUMT817-25 SOT-323 2 10

T7 Philips Si-P BSR15 SOT-23 10 2N2907

T7 Thomson Si-P BSR15 SOT-23 10 2N2907

T705 Zetex Si-P-Darl ZDT705 MDIP-8 23

T71 National Si-P BSR15R SOT-23 10 2N2907

T71 Philips Si-P BSR15R SOT-23 10 2N2907

T71 Thomson Si-P BSR15R SOT-23 10 2N2907

T71 Zetex Si-P ZUMT717 SOT-323 2 10

T717 Zetex Si-P ZDT717 MDIP-8 23

T72 NEC Si-N 2SC4568-T72/EB SOT-23 10

T72 NEC Si-N 2SC4570-T72 SOT-323 2 10

T72 Zetex Si-P ZUMT718 SOT-323 2 10

T73 NEC Si-N µPA803T-FB SOT-363 2 15

T73 NEC Si-N 2SC4568-T73/FB SOT-23 10

T73 NEC Si-N 2SC4570-T73 SOT-323 2 10

T73 Zetex Si-P ZUMT720 SOT-323 2 10

T74 NEC Si-N µPA803T-GB SOT-363 2 15

T74 NEC Si-N 2SC4568-T74/GB SOT-23 10

T74 NEC Si-N 2SC4570-T74 SOT-323 2 10

T749 Zetex Si-P ZDT749 MDIP-8 23

T75 NEC Si-N 2SC4569-T75/EB SOT-23 10

T75 NEC Si-N 2SC4570-T75 SOT-323 2 10

T758 Zetex Si-P ZDT758 MDIP-8 23

T76 NEC Si-N µPA804T-FB SOT-363 2 15

T6718 … T76

http://www.serwis-elektroniki.com.pl/

Page 222:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

T76 NEC Si-N 2SC4569-T76/FB SOT-23 10

T76 NEC Si-N 2SC4570-T76 SOT-323 2 10

T77 NEC Si-N µPA804T-GB SOT-363 2 15

T77 NEC Si-N 2SC4569-T77/GB SOT-23 10

T77 NEC Si-N 2SC4570-T77 SOT-323 2 10

T8 Hitachi C-Di HVM25 SOT-23 10

T8 National Si-P BSR16 SOT-23 10 2N2907A

T8 Siliconix N-FET SST4118 SOT-23 10

T8 Toshiba C-Di 1SV212 ~SOD-123 2,7 19

T8 Toshiba C-Di 1SV229 SOD-323 1,7 19

T8 Toshiba C-Di 1SV257 SOD-523 1,3 19

T8 Toshiba C-Di 1SV306 SOT-343 2 13

T8 Zetex Si-P ZUMT807-25 SOT-323 2 10

T8 Philips Si-P BSR16 SOT-23 10 2N2907A

T8 Thomson Si-P BSR16 SOT-23 10 2N2907A

T81 National Si-P BSR16R SOT-23 10 2N2907A

T81 Philips Si-P BSR16R SOT-23 10 2N2907A

T81 Thomson Si-P BSR16R SOT-23 10 2N2907A

T82 NEC Si-N µPA805T SOT-363 2 15

T82 NEC Si-N 2SC4954-T82/FB SOT-23 10

T82 NEC Si-N 2SC4956-T82 SOT-143 13

T82 NEC Si-N 2SC4958-T82 SOT-323 2 10

T82 NEC Si-N 2SC5014-KB SOT-343 2 13

T83 NEC Si-N µPA806T SOT-363 2 15

T83 NEC Si-N 2SC4955-T83/FB SOT-23 10

T83 NEC Si-N 2SC4956-T83 SOT-143 13

T83 NEC Si-N 2SC4959-T83 SOT-323 2 10

T83 NEC Si-N 2SC5015-KB SOT-343 2 13

T84 NEC Si-N µPA807T SOT-363 2 15

T84 NEC Si-N 2SC5177-FB SOT-23 10

T84 NEC Si-N 2SC5178-FB SOT-143 13

T84 NEC Si-N 2SC5179-FB SOT-323 2 10

T84 NEC Si-N 2SC5180-FB SOT-343 2 13

T86 NEC Si-N µPA808T SOT-363 2 15

T86 NEC Si-N 2SC5182-FB SOT-23 10

T76 … T86

http://www.serwis-elektroniki.com.pl/

Page 223:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

T86 NEC Si-N 2SC5183-FB SOT-143 13

T86 NEC Si-N 2SC5184-FB SOT-323 2 10

T86 NEC Si-N 2SC5185-FB SOT-343 2 13

T88 NEC Si-N µPA809T SOT-363 2 15

T88 NEC Si-N 2SC5191-FB SOT-23 10

T88 NEC Si-N 2SC5192-FB SOT-143 13

T88 NEC Si-N 2SC5193-FB SOT-323 2 10

T88 NEC Si-N 2SC5194-FB SOT-343 2 13

T89 NEC Si-N 2SC5288-KB SOT-143 13

T9 Hitachi Si-Di HVM306 SOT-23 10

T9 National Si-P BSR18 SOT-23 10 2N3905

T9 Philips Si-P BSR18 SOT-23 10 2N3905

T9 Siliconix N-FET SST4119 SOT-23 10

T9 Toshiba Si-Di 1SS396 SOT-23 10

T9 Toshiba C-Di 1SV227 SOD-123 2,7 19

T9 Toshiba C-Di 1SV232 SOD-323 1,7 19

T9 Toshiba C-Di 1SV259 SOD-523 1,3 19

T9 Valvo Si-N BSR18 SOT-23 10

T90 NEC Si-N 2SC5289-KB SOT-143 13

T91 National Si-P BSR18R SOT-23 10 2N3905

T91 Philips Si-N BSR18R SOT-23 10 2N3905

T92 National Si-P BSR18A SOT-23 10 2N3906

T92 NEC Si-P 2SA1977 SOT-23 10

T92 Philips Si-P BSR18A SOT-23 10 2N3906

T93 National Si-P BSR18AR SOT-23 10 2N3906

T93 NEC Si-P 2SA1978 SOT-23 10

T93 Philips Si-P BSR18AR SOT-23 10 2N3906

T95 NEC Si-N 2SC5369-FB SOT-363 15

T97 NEC Si-N 2SC5409-FB SOT-363 15

TA KEC Si-N KTC3295-A SOT-23 10

TA Siemens Si-Sensor KTY13-A SOT-23 10

TA Toshiba C-Di 1SV226 SOD-123 2,7 19

TA Toshiba C-Di 1SV231 SOD-323 1,7 19

TA Toshiba Si-P 2SA1314-A SOT-89 11

TA3 AEG LIN-IC S858TA3 SOT-143 13

T86 … TA3

http://www.serwis-elektroniki.com.pl/

Page 224:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

TB KEC Si-N KTC3295-B SOT-23 10

TB NEC MOS-P-FET-e* µPA1910 SOT-163 15

TB Siemens Si-Sensor KTY13-B SOT-23 10

TB Toshiba C-Di 1SV238 SOD-323 1,7 19

TB Toshiba Si-P 2SA1314-B SOT-89 11

TC Hitachi Si-N 2SC2736 SOT-23 10

TC NEC MOS-P-FET-e* µPA1911 SOT-163 15

TC Siemens Si-Sensor KTY13-C SOT-23 10

TC Toshiba C-Di 1SV239 SOD-323 1,7 19

TC Toshiba C-Di 1SV260 SOD-523 1,3 19

TC Toshiba Si-P 2SA1314-C SOT-89 11

TD Fagor Z-Di P6SMB-47C DO-214AA 5 19

TD NEC MOS-P-FET-e* µPA1912 SOT-163 15

TD Siemens Si-Sensor KTY13-D SOT-23 10

TD Toshiba C-Di 1SV262 SOD-323 1,7 19

TE Fagor Z-Di P6SMB-47CA DO-214AA 5 19

TE NEC MOS-P-FET-e* µPA1913 SOT-163 15

TE NEC Si-N-Darl+Di 2SD1702-TE SOT-89 11

TE Rohm Si-N 2SC3906K-E SOT-23 10

TE Rohm Si-N 2SC4102-E SOT-323 2 10

TE Toshiba C-Di 1SV269 SOD-323 1,7 19

TF Fagor Z-Di P6SMB-51C DO-214AA 5 19

TF Motorola Si-Di BAL99 SOT-23 10

TF NEC MOS-P-FET-e* µPA1914 SOT-163 15

TF NEC Si-N-Darl+Di 2SD1702-TF SOT-89 11

TF Toshiba C-Di 1SV270 SOD-323 1,7 19

TG Fagor Z-Di P6SMB-51CA DO-214AA 5 19

TG KEC Si-N KTC4378-GR SOT-89 11

TG NEC MOS-P-FET-e* µPA1900 SOT-163 15

TG Toshiba N-FET 2SK302-GR SOT-23 10

TG Toshiba N-FET 2SK882-GR SOT-323 2 10

tG3 Philips Si-N PMST5551 SOT-323 2 10

TH Fagor Z-Di P6SMB-56C DO-214AA 5 19

TH NEC MOS-P-FET-e* µPA1915 SOT-163 15

TH Thomson Z-Di SM4T150 SOD-6 6×4 19

TB … TH

http://www.serwis-elektroniki.com.pl/

Page 225:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

TH Toshiba C-Di 1SV293 SOD-323 1,7 19

TI- Hitachi Si-N 2SC4197 SOT-23 10

TI- Hitachi Si-N 2SC4260 SOT-323 2 10

TI- Hitachi Si-N 2SC5136 SS Mini 1,6 10

TJ Sanyo MOS-N-FET-d 3SK265 SOT-143 13

TJ Toshiba C-Di 1SV288 SOD-323 1,7 19

TJ Toshiba C-Di 1SV290 SOD-523 1,3 19

TJ5 Sanyo MOS-N-FET-d 3SK265-5 SOT-143 13

TJ6 Sanyo MOS-N-FET-d 3SK265-6 SOT-143 13

TK Fagor Z-Di P6SMB-56CA DO-214AA 5 19

TK NEC Si-N 2SC3617-TK SOT-89 11

TK Thomson Z-Di SM4T150A SOD-6 6×4 19

TK Toshiba C-Di 1SV287 SOD-323 1,7 19

TK Toshiba C-Di 1SV291 SOD-523 1,3 19

TL Fagor Z-Di P6SMB-62C DO-214AA 5 19

TL NEC Si-N 2SC3617-TL SOT-89 11

TL Sanyo Si-P 2SA1573 SOT-23 10

TM Fagor Z-Di P6SMB-62CA DO-214AA 5 19

TM NEC Si-N 2SC3617-TM SOT-89 11

TM1101 Philips Si-N+Di PZTM1101 SOT-223 16

TM1102 Philips Si-P+Di PZTM1102 SOT-223 16

TN Fagor Z-Di P6SMB-68C DO-214AA 5 19

TO Toshiba N-FET 2SK302-O SOT-23 10

tO4 Philips Si-N PMST3904 SOT-323 2 10

tO6 Philips Si-P PMST3906 SOT-323 2 10

TP Fagor Z-Di P6SMB-68CA DO-214AA 5 19

TP Matsushita Si-N 2SD1119-P SOT-89 11

TPI120 Thomson Z-Di, Z-IC TPI12011P MDIP-8 23

TPI120 Thomson Z-Di, Z-IC TPI12012P DIP-8 21

TPI80 Thomson Z-Di, Z-IC TPI8011P MDIP-8 23

TPI80 Thomson Z-Di, Z-IC TPI8012P DIP-8 21

TPP250 Thomson Z-Di, Z-IC TPP25011 MDIP-8 23

TPP250 Thomson Z-Di, Z-IC TPP25012P DIP-8 21

TQ Fagor Z-Di P6SMB-75C DO-214AA 5 19

TQ Matsushita Si-N 2SD1119-Q SOT-89 11

TH … TQ

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

T

TQ Mitsubishi Si-P 2SA1530-Q SOT-23 10

TQ Mitsubishi Si-P 2SA1603-Q SOT-323 2 10

TQ NEC Si-N-Darl+Di 2SD1699-TQ SOT-89 11

TR Fagor Z-Di P6SMB-75CA DO-214AA 5 19

TR Matsushita Si-N 2SC2406-R SOT-23 10

TR Matsushita Si-N 2SC3929A-R SOT-323 2 10

TR Matsushita Si-N 2SD1119-R SOT-89 11

TR Mitsubishi Si-P 2SA1530-R SOT-23 10

TR Mitsubishi Si-P 2SA1603-R SOT-323 2 10

TR NEC Si-N-Darl+Di 2SD1699-TR SOT-89 11

TR Rohm Si-N 2SC3906K-R SOT-23 10

TR Rohm Si-N 2SC4102-R SOT-323 2 10

TS Fagor Z-Di P6SMB-82C DO-214AA 5 19

TS Matsushita Si-N 2SC2406-S SOT-23 10

TS Matsushita Si-N 2SC3929A-S SOT-323 2 10

TS Mitsubishi Si-P 2SA1530-S SOT-23 10

TS Mitsubishi Si-P 2SA1603-S SOT-323 2 10

TS Rohm Si-N 2SC3906K-S SOT-23 10

TS Rohm Si-N 2SC4102-S SOT-323 2 10

TS Thomson Z-Di SM4T200 SOD-6 6×4 19

TT Fagor Z-Di P6SMB-82CA DO-214AA 5 19

TT Matsushita Si-N 2SC2406-T SOT-23 10

TT Matsushita Si-N 2SC3929A-T SOT-323 2 10

TT Mitsubishi Si-P 2SA1530-T SOT-23 10

TT Mitsubishi Si-P 2SA1603-T SOT-323 2 10

TT Sanyo Si-N 2SC4519 SOT-23 10

TT Thomson Z-Di SM4T200A SOD-6 6×4 19

TT Toshiba C-Di 1SV302 SOD-323 1,7 19

TT Toshiba C-Di 1SV303 SOD-523 1,3 19

TU Fagor Z-Di P6SMB-91C DO-214AA 5 19

TU Thomson Z-Di SM4T220 SOD-6 6×4 19

TV Fagor Z-Di P6SMB-91CA DO-214AA 5 19

TV Thomson Z-Di SM4T220A SOD-6 6×4 19

TV Toshiba C-Di 1SV304 SOD-323 1,7 19

TV Toshiba C-Di 1SV305 SOD-523 1,3 19

TQ … TV

http://www.serwis-elektroniki.com.pl/

Page 227:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

U

TW Fagor Z-Di P6SMB-100C DO-214AA 5 19

TX Fagor Z-Di P6SMB-100CA DO-214AA 5 19

TY Fagor Z-Di P6SMB-110C DO-214AA 5 19

TY Hitachi MOS-N-FET-e 2SK2315 SOT-89 11

TY KEC Si-N KTC4378-Y SOT-89 11

TY Sanyo Si-N 2SC3912 SOT-23 10

TY Sanyo Si-N 2SC5502 SOT-343 2 13

TY Toshiba C-Di 1SS241 ~SOD-123 2,7 19

TY Toshiba C-Di 1SS314 SOD-323 1,7 19

TY Toshiba C-Di 1SS371 SOD-523 1,3 19

TY Toshiba N-FET 2SK302-Y SOT-23 10

TY Toshiba N-FET 2SK882 SOT-323 2 10

TY4 Sanyo Si-N 2SC5502-4 SOT-343 2 13

TY5 Sanyo Si-N 2SC5502-5 SOT-343 2 13

TZ Fagor Z-Di P6SMB-110CA DO-214AA 5 19

TZ Siemens Si-N BZW20 SOT-23 10

U

U Hitachi C-Di HVE355 SOD-523 1,3 19

U Hitachi C-Di HVU355 SOD-323 1,7 19

U Matsushita Si-N 2SC2404 SOT-23 10

U Matsushita Si-N 2SC3931 SOT-323 2 10

U Matsushita Si-N 2SC4627 SC-75 1,6 10

U Matsushita Si-N 2SC4627J SC-81 1,6 10

U Matsushita Si-Di MA2V01 SOD-523 1,3 19

U Siemens C-Di BB525 SOD-123 2,7 19

U Siemens C-Di BB545 SOD-323 1,7 19

U01 Thomson Z-Di SMTPA62 SOD-6 6×4 19

U05 Thomson Z-Di SMTPA68 SOD-6 6×4 19

U1 Fagor Si-Di FES1A DO-214AC 5 19

U1 Philips Si-Br BGX50A SOT-143 13

U1 SGS Si-N BCX19 SOT-23 10 BC337

U1 Toshiba GaAs-N-FET-d 3SK283 SOT-143 13

U1 Toshiba GaAs-N-FET-d 3SK284 SOT-343 2 13

U1 Toshiba Si-N (IC) TA4004F SOT-153 14

TW … U1

http://www.serwis-elektroniki.com.pl/

Page 228:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 219 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

U

U1 Ferranti Si-N BCX19 SOT-23 10

U1 Motorola Si-N BCX19 SOT-23 10

U1 Philips Si-N BCX19 SOT-23 10 BC337

U1 Siemens Si-Gl BGX50A SOT-143 13

U10120E Motorola Si-Di MUR10120E TO-220 4

U10150E Motorola Si-Di MUR10150E TO-220 4

U12 NEC Si-N 2SC2758-U12 SOT-23 10

U120 Motorola Si-Di MUR120 DO-41 9

U13 NEC Si-N 2SC2758-U13 SOT-23 10

U13 Thomson Z-Di SMTPA100 SOD-6 6×4 19

U14 NEC Si-N 2SC2758-U14 SOT-23 10

U140 Motorola Si-Di MUR140 DO-41 9

U1520 Motorola Si-Di MUR1520 TO-220 4

U1540 Motorola Si-Di MUR1540 TO-220 4

U1560 Motorola Si-Di MUR1560 TO-220 4

U16 NEC Si-N 2SC4183-U16 SOT-323 2 10

U160 Motorola Si-Di MUR160 DO-41 9

U1620 Motorola Si-Di MUR1620CT TO-220 4

U1620 Motorola Si-Di MURF1620CT TO-220 Iso 4

U1620R Motorola Si-Di MUR1620TR TO-220 4

U1620T Motorola Si-Di MURB1620CT TO-263 8

U1640 Motorola Si-Di MUR1640CT TO-220 4

U1660 Motorola Si-Di MUR1660CT TO-220 4

U1660 Motorola Si-Di MURF1660CT TO-220 Iso 4

U1660T Motorola Si-Di MURB1660CT TO-263 8

U17 NEC Si-N 2SC4183-U17 SOT-323 2 10

U17 Thomson Z-Di SMTPA120 SOD-6 6×4 19

U18 NEC Si-N 2SC4183-U18 SOT-323 2 10

U19 Thomson Z-Di SMTPA130 SOD-6 6×4 19

U190E Motorola Si-Di MUR190E DO-41 9

U1D Motorola Si-Di MURS120 DO-214AA 5 19

U1J Motorola Si-Di MURS160 DO-214AA 5 19

U2 Fagor Si-Di FES1B DO-214AC 5 19

U2 SGS Si-N BCX20 SOT-23 10 BC338

U2 Sony N-FET 2SK613-2 SOT-23 10

U1 … U2

http://www.serwis-elektroniki.com.pl/

Page 229:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 220 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

U

U2 Toshiba Si-N (IC) TA4003F SOT-153 14

U2 Ferranti Si-N BCX20 SOT-23 10

U2 Motorola Si-N BCX20 SOT-23 10

U2 Philips Si-N BCX20 SOT-23 10 BC338

U21 NEC Si-N 2SC2759-U21 SOT-23 10

U21 NEC Si-N 2SC4185-U21 SOT-323 2 10

U22 NEC Si-N 2SC2759-U22 SOT-23 10

U22 NEC Si-N 2SC4185-U22 SOT-323 2 10

U23 NEC Si-N 2SC2759-U23 SOT-23 10

U23 NEC Si-N 2SC4185-U23 SOT-323 2 10

U25 Thomson Z-Di SMTPA180 SOD-6 6×4 19

U27 Thomson Z-Di SMTPA200 SOD-6 6×4 19

U3 Fagor Si-Di FES1D DO-214AC 5 19

U3 Ferranti Si-N BSS64 SOT-23 10

U3 Philips Si-N BSS64 SOT-23 10 BSS38

U3 Siemens Si-N BSS64 SOT-23 10 BSS38

U3 Sony N-FET 2SK613-3 SOT-23 10

U3 Thomson Si-N BSS64 SOT-23 10

U3 Valvo Si-N BSS64 SOT-23 10

U3020 Motorola Si-Di MUR3020PT TO-3P 5

U3020 Motorola Si-Di MUR3020WT TO-247 3

U3040 Motorola Si-Di MUR3040 TO-3P 5

U3040 Motorola Si-Di MUR3040PT TO-3P 5

U3040 Motorola Si-Di MUR3040WT TO-247 3

U3060 Motorola Si-Di MUR3060PT TO-3P 5

U3060 Motorola Si-Di MUR3060WT TO-247 3

U3080 Motorola Si-Di MUR3080 TO-3P 5

U31 Thomson Z-Di SMTPA220 SOD-6 6×4 19

U32 NEC N-FET 3SK132-U32 SOT-143 13

U32 Thomson Si-Di STPS320U SOD-6 6×4 19

U320 Motorola Si-Di MURD320 TO-252 8

U33 NEC N-FET 3SK132-U33 SOT-143 13

U33 Thomson Si-Di STPS330U SOD-6 6×4 19

U34 Thomson Si-Di STPS340U SOD-6 6×4 19

U35 National Si-N BSR19 SOT-23 10 2N5550

U2 … U35

http://www.serwis-elektroniki.com.pl/

Page 230:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 221 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

U

U35 Philips Si-N BSR19 SOT-23 10 2N5550

U35 Thomson Z-Di SMTPA240 SOD-6 6×4 19

U36 National Si-N BSR19A SOT-23 10 2N5551

U36 Philips Si-N BSR19A SOT-23 10 2N5551

U39 Thomson Z-Di SMTPA270 SOD-6 6×4 19

U3D Motorola Si-Di MURS320 (403-03) 7×6 19

U3J Motorola Si-Di MURS360 (403-03) 7×6 19

U4 Fagor Si-Di FES1F DO-214AC 5 19

U4 Ferranti Si-N BCX19R SOT-23 10

U4 Philips Si-N BCX19R SOT-23 10 BC337

U4 SGS Si-N BCX19R SOT-23 10 BC337

U4 Sony N-FET 2SK613-4 SOT-23 10

U4 Valvo Si-N BCX19R SOT-23 10

U4100E Motorola Si-Di MUR4100 DO-27A 9

U42 NEC N-FET 3SK132-U42 SOT-143 13

U420 Motorola Si-Di MUR420 DO-27A 9

U43 NEC N-FET 3SK132-U43 SOT-143 13

U460 Motorola Si-Di MUR460 DO-27A 9

U490E Motorola Si-Di MUR490E DO-27A 9

U5 Fagor Si-Di FES1G DO-214AC 5 19

U5 Ferranti Si-N BCX20R SOT-23 10

U5 Philips Si-N BCX20R SOT-23 10 BC338

U5 SGS Si-N BCX20R SOT-23 10 BC338

U5 Valvo Si-N BCX20R SOT-23 10

U5150E Motorola Si-Di MUR5150E TO-220 4

U6 Ferranti Si-N BSS64R SOT-23 10

U6 Philips Si-N BSS64R SOT-23 10

U6 Siemens Si-N BSS64R SOT-23 10

U6 Thomson Si-N BSS64R SOT-23 10

U6 Valvo Si-N BSS64R SOT-23 10

U6040 Motorola Si-Di MUR6040 TO-3P 5

U620 Motorola Si-Di MUR620CT TO-220 4

U620T Motorola Si-Di MURD620CT TO-252 8

U7 National Si-N BSR13 SOT-23 10 2N2222

U7 Philips Si-N BSR13 SOT-23 10 2N2222

U35 … U7

http://www.serwis-elektroniki.com.pl/

Page 231:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 222 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

U

U7 Thomson Si-N BSR13 SOT-23 10 2N2222

U71 National Si-N BSR13R SOT-23 10 2N2222

U71 Philips Si-N BSR13R SOT-23 10 2N2222

U71 Thomson Si-N BSR13R SOT-23 10 2N2222

U8 National Si-N BSR14 SOT-23 10 2N2222A

U8 Toshiba Si-N (IC) TA4002F SOT-143 13

U8 Philips Si-N BSR14 SOT-23 10 2N2222A

U8 Thomson Si-N BSR14 SOT-23 10 2N2222A

U81 National Si-N BSR14R SOT-23 10 2N2222A

U81 Philips Si-N BSR14R SOT-23 10 2N2222A

U81 Thomson Si-N BSR14R SOT-23 10 2N2222A

U8100E Motorola Si-Di MUR8100 TO-220 4

U820 Motorola Si-Di MUR820 TO-220 4

U820 Motorola Si-Di MURF820 TO-220 Iso 4

U840 Motorola Si-Di MUR840 TO-220 4

U860 Motorola Si-Di MUR860 TO-220 4

U890E Motorola Si-Di MUR890E TO-220 4

U9 National Si-N BSR17 SOT-23 10 2N3903

U9 Philips Si-N BSR17 SOT-23 10 2N3903

U9 Toshiba Si-N (IC) TA4001F SOT-143 13

U91 National Si-N BSR17R SOT-23 10 2N3903

U91 Philips Si-N BSR17R SOT-23 10 2N3903

U92 National Si-N BSR17A SOT-23 10 2N3904

U92 Philips Si-N BSR17A SOT-23 10 2N3904

U93 National Si-N BSR17AR SOT-23 10 2N3904

U93 Philips Si-N BSR17AR SOT-23 10 2N3904

UA KEC C-Di KDV154 SOD-323 1,7 19

UA KEC Si-N MMBTA517 SOT-23 10

UA Rohm Si-P-Darl 2SB852K-A SOT-23 10

UA Rohm Si-P 2SB852-UA (MMT) ~10

UA Toshiba N-FET 3SK101 ~SOT-103 7

UA Toshiba Si-N (IC) TA4000F SOT-163 15

UA1 NEC MOS-P-FET-e 2SJ357 SOT-89 11

UA2 NEC MOS-P-FET-e 2SJ358 SOT-89 11

UA3 NEC MOS-P-FET-e 2SJ462 SOT-89 11

U7 … UA3

http://www.serwis-elektroniki.com.pl/

Page 232:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

U

UB Matsushita Si-N 2SC2404-B SOT-23 10

UB Matsushita Si-N 2SC3931-B SOT-323 2 10

UB Matsushita Si-N 2SC4627-B SS Mini 1,6 10

UB Matsushita Si-N 2SC4973-B (T Mini) ~10

UB Rohm Si-P-Darl 2SB852K-B SOT-23 10

UB Rohm Si-P 2SB852-UB (MMT) ~10

UB Siemens C-Di BB503 SOT-23 10

UB Thomson C-Di BB503 SOT-23 10

UB Toshiba MOS-N-FET-e 2SK1771 SOT-343 13

UB Toshiba N-FET (IC) TA4006F SOT-153 14

UB Toshiba Si-N (IC) TA4100F SOT-163 15

UC Matsushita Si-N 2SC2404-C SOT-23 10

UC Matsushita Si-N 2SC3931-C SOT-323 2 10

UC Matsushita Si-N 2SC4627-C SS Mini 1,6 10

UC Matsushita Si-N 2SC4973-C (T Mini) ~10

UC Toshiba N-FET 3SK114 ~SOT-103 7

UC Toshiba N-FET 3SK126 SOT-143 13

UC Toshiba N-FET (IC) TA4007F SOT-153 14

UD Hitachi Si-N 2SC2821-D SOT-23 10

UD KEC Si-Di KDS114 SOD-323 1,7 19

UD Matsushita Si-N 2SC2404-D SOT-23 10

UD Matsushita Si-N 2SC3931-D SOT-323 2 10

UD Matsushita Si-N 2SC4627-D SS Mini 1,6 10

UD Matsushita Si-N 2SC4973-D (T Mini) ~10

UD Siemens C-Di BB504 SOT-23 10

UD Thomson C-Di BB504 SOT-23 10

UD Thomson Z-Di SM4T18C SOD-6 6×4 19

UD Toshiba N-FET 3SK115 ~SOT-103 7

UD Toshiba N-FET 3SK127 SOT-143 13

UD Toshiba N-FET (IC) TG2000F SOT-153 14

UE Hitachi Si-N 2SC2821-E SOT-23 10

UE KEC C-Di KDV175 SOD-323 1,7 19

UE Thomson Z-Di SM4T18CA SOD-6 6×4 19

UE Toshiba N-FET 3SK145 7

UE Toshiba N-FET 3SK146 SOT-143 13

UB … UE

http://www.serwis-elektroniki.com.pl/

Page 233:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

U

UF Hitachi Si-N 2SC2821-F SOT-23 10

UF KEC Si-Di KDS160 SOD-323 1,7 19

UF Siemens C-Di BB801 SOT-23 10

UG Siemens C-Di BBY31 SOT-23 10

UG Thomson C-Di BBY31 SOT-23 10

UG Toshiba N-FET 3SK121 ~SOT-103 7

UG Toshiba N-FET 3SK140 SOT-143 13

UH Thomson Z-Di SM4T22C SOD-6 6×4 19

UH Toshiba N-FET 3SK150 ~SOT-103 7

UH Toshiba MOS-N-FET-d 3SK151 SOT-143 13

UH Toshiba MOS-N-FET-d 3SK260 SOT-343 2 13

UH840 Motorola Si-Di MURH840CT TO-220 4

UH840 Motorola Si-Di MURHB840CT TO-263 8

UH860 Motorola Si-Di MURH860CT TO-220 4

UI Toshiba N-FET 3SK152 ~SOT-103 7

UI Toshiba N-FET 3SK153 SOT-143 13

UI Toshiba MOS-N-FET-d 3SK259 SOT-343 2 13

UI- Hitachi Si-N 2SC4229 SOT-23 10

UI- Hitachi Si-N 2SC4259 SOT-323 2 10

UJ Toshiba N-FET 3SK195 SOT-143 13

UK NEC Si-N 2SC3618-UK SOT-89 11

UK Thomson Z-Di SM4T22CA SOD-6 6×4 19

UL NEC Si-N 2SC3618-UL SOT-89 11

UL Sanyo Si-P 2SB1295 SOT-23 10

UL Toshiba N-FET 3SK159 ~SOT-103 7

UL Toshiba N-FET 3SK160 SOT-143 13

UM NEC Si-N 2SC3618-UM SOT-89 11

UM Thomson Z-Di SM4T24C SOD-6 6×4 19

UM Thomson Z-Di SM4T24CA SOD-6 6×4 19

UM Toshiba N-FET 3SK198 7

UM Toshiba N-FET 3SK199 SOT-143 13

UN Thomson Z-Di SM4T27C SOD-6 6×4 19

UN Toshiba GaAs-N-FET-d 3SK215 SOT-143 13

UN Toshiba MOS-N-FET 3SK240 SOT-143 13

UN Toshiba GaAs-N-FET-d 3SK274 SOT-343 2 13

UF … UN

http://www.serwis-elektroniki.com.pl/

Page 234:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

V

UN Toshiba MOS-N-FET-d 3SK274 SOT-343 2 13

UO KEC Si-N KTC4379-O SOT-89 11

UO Toshiba MOS-N-FET-d 3SK232 SOT-143 13

UO Toshiba MOS-N-FET-d 3SK249 SOT-343 2 13

UP Thomson Z-Di SM4T27CA SOD-6 6×4 19

UP Toshiba GaAs-N-FET-d 3SK216 SOT-143 13

UP Toshiba GaAs-N-FET-d 3SK250 SOT-143 13

UP Toshiba GaAs-N-FET-d 3SK275 SOT-343 2 13

UQ Thomson Z-Di SM4T30C SOD-6 6×4 19

UR Thomson Z-Di SM4T30CA SOD-6 6×4 19

UR Toshiba MOS-N-FET 3SK207 SOT-143 13

UR Toshiba MOS-N-FET-d 3SK256 SOT-343 2 13

US Thomson Z-Di SM4T33C SOD-6 6×4 19

UT Sanyo Si-N 2SC4555 SOT-323 2 10

UT Sanyo Si-N 2SC4577 SOT-23 10

UT Thomson Z-Di SM4T33CA SOD-6 6×4 19

UT Toshiba MOS-N-FET 3SK225 SOT-143 13

UT Toshiba MOS-N-FET-d 3SK257 SOT-343 2 13

UU Thomson Z-Di SM4T36C SOD-6 6×4 19

UU Toshiba MOS-N-FET 3SK226 SOT-143 13

UU Toshiba MOS-N-FET-d 3SK258 SOT-343 2 13

UV Thomson Z-Di SM4T36CA SOD-6 6×4 19

UW Thomson Z-Di SM4T39C SOD-6 6×4 19

UX Thomson Z-Di SM4T39CA SOD-6 6×4 19

UY Hitachi MOS-P-FET-e* 2SJ450 SOT-89 11

UY KEC Si-N KTC4379-Y SOT-89 11

UY Sanyo Si-N 2SC3913 SOT-23 10

V

V Hitachi C-Di HVC308A SOD-523 1,3 19

V Hitachi C-Di HVU308 (A) SOD-323 1,7 19

V Matsushita Si-N 2SC2295 SOT-23 10

V Matsushita Si-N 2SC3930 SOT-323 2 10

V Matsushita Si-N 2SC4626 SC-75 1,6 10

V Matsushita Si-N 2SD968A SOT-89 11

UN … V

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

V

V Sanyo N-FET 2SK1332 SOT-323 2 10

V0 Siliconix MOS-N-FET-e VP0610T SOT-23 10

V01 NEC N-FET 3SK179-V01 SOT-143 13

V02 NEC N-FET 3SK179-V02 SOT-143 13

V03 NEC N-FET 3SK179-V03 SOT-143 13

V1 Fagor Si-Di FES2A DO-214AA 5 19

V1 NEC Si-N 2SD596-V1 SOT-23 10

V1 Siliconix MOS-N-FET-e VN50300T SOT-23 10

V1 Toshiba C-Di 1SV160 SOT-23 10

V1 Philips Si-N BFT25 SOT-23 10 BFT24

V10 NEC N-FET 3SK131-V10 SOT-143 13

V10 Philips Si-N BFT25A SOT-23 10

V10-20 Philips Si-Di BYV10-20 SOD-81 9

V10-30 Philips Si-Di BYV10-30 SOD-81 9

V10-40 Philips Si-Di BYV10-40 SOD-81 9

V11 NEC N-FET 3SK131-V11 SOT-143 13

V11 Philips Si-N BFG25 SOT-143 13

V12 AEG Si-N BFG67X SOT-143 13

V12 NEC N-FET 3SK131-V12 SOT-143 13

V12 Philips Si-N BFG67X SOT-143 13

V13 Philips Si-N BFG197X SOT-143 13

V13 Zetex C-Di ZC932 SOT-23 10

V14 Philips Si-N BFG92AX SOT-143 13

V14 Zetex C-Di ZC931 SOT-23 10

V15 Philips Si-N BFG93AX SOT-143 13

V15 Zetex C-Di ZC930 SOT-23 10

V16 Philips Si-N BFG33X SOT-143 13

V16 Zetex C-Di ZC934 SOT-23 10

V17 Zetex C-Di ZC933 SOT-23 10

V2 AEG Si-N BFQ67 SOT-23 10 BFQ65

V2 Fagor Si-Di FES2B DO-214AA 5 19

V2 Hitachi C-Di HVC362 SOD-523 1,3 19

V2 Hitachi C-Di HVU362 SOD-323 1,7 19

V2 NEC Si-N 2SD596-V2 SOT-23 10

V2 Philips Si-N BFQ67W SOT-323 2 10

V … V2

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

V

V2 Sanyo N-FET 2SK303-V2 SOT-23 10

V2 Shindengen Si-Di D1F20 DO-214AC 5 19

V2 Siliconix MOS-N-FET-e VN0605T SOT-23 10

V2 Philips Si-N BFQ67 SOT-23 10 BFQ65

V22N Shindengen Si-Di S1ZA20 DIP-4 21

V24 NEC Si-N µPA831TF SOT-363 2 15

V25 Philips Si-P PMBT3640 SOT-23 10

V26 Philips Si-N BFG67XR SOT-143 13

V27 NEC Si-N µPA834TF SOT-363 2 15

V27 Philips Si-N BFG67R SOT-143 13

V29 Philips Si-N BFG92A/XR SOT-143 13

V3 AEG Si-N BFG67 SOT-143 13 BFG65

V3 Fagor Si-Di FES2D DO-214AA 5 19

V3 Hitachi C-Di HVC363A SOD-523 1,3 19

V3 Hitachi C-Di HVU363A SOD-323 1,7 19

V3 NEC Si-N 2SD596-V3 SOT-23 10

V3 Philips Si-N BFG67 SOT-143 13 BFG65

V3 Sanyo N-FET 2SK303-V3 SOT-23 10

V3 Toshiba C-Di 1SV225 SOT-23 10

V3 Valvo Si-N BFG67 SOT-143 13

V30 Philips Si-N PMBTH10 SOT-23 10

V31 Philips Si-P PMBTH81 SOT-23 10

V32 Philips Si-N BF750 SOT-143 13

V33 Philips Si-N BFG93A/XR SOT-143 13

V34 NEC Si-N µPA832TF SOT-363 2 15

V34 Philips Si-N BF749 SOT-143 13

V35 Philips Si-N BFG197XR SOT-143 13

V37 NEC Si-N µPA835TF SOT-363 2 15

V38 Philips Si-N BF752 SOT-143 13

V4 Fagor Si-Di FES2F DO-214AA 5 19

V4 NEC Si-N 2SD780-V4 SOT-23 10

V4 Philips Si-N BFT25R SOT-23 10

V4 Sanyo N-FET 2SK303-V4 SOT-23 10

V4 Shindengen Si-Di D1F40 DO-214AC 5 19

V4 Toshiba C-Di 1SV228 SOT-23 10

V2 … V4

http://www.serwis-elektroniki.com.pl/

Page 237:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

V

V4 Valvo Si-N BFT25R SOT-23 10

V40E15 Philips Si-N BYV40E-150 SOT-223 16

V40E20 Philips Si-Di BYV40E-200 SOT-223 16

V44 NEC Si-N µPA833TF SOT-363 2 15

V47 NEC Si-N µPA836TF SOT-363 2 15

V5 Fagor Si-Di FES2G DO-214AA 5 19

V5 NEC Si-N 2SD780-V5 SOT-23 10

V5 Philips Si-N BFG197 SOT-143 13

V5 Sanyo N-FET 2SK303-V5 SOT-23 10

V5 Toshiba C-Di 1SV242 SOT-23 10

V5B Toshiba Si-Di TVR5B DO-41 3 9

V5D Toshiba Si-Di TVR5D DO-41 9

V5G Toshiba Si-Di TVR5G DO-41 9

V5J Toshiba Si-Di TVR5J DO-41 9

V6 Hitachi C-Di HVC365 SOD-523 1,3 19

V6 Hitachi C-Di HVU365 SOD-323 1,7 19

V6 NEC Si-N 2SD780-V6 SOT-23 10

V6 Philips Si-N BFG33 SOT-143 13

V6 Shindengen Si-Di D1F60 DO-214AC 5 19

V61 Origin Si-Varistor F1V61B DO-214AC 5 19

V62 Origin Si-Varistor F1V62B DO-214AC 5 19

V62N Shindengen Si-Di S1ZA60 DIP-4 21

V7005 Motorola C-Di MV7005 SOT-223 16

V7404 Motorola C-Di MV7404 SOT-223 16

VA Hitachi Si-N 2SC2776-A SOT-23 10

VA KEC Si-N KTC3121 SOT-23 10

VA KEC Si-N KTC4021 SOT-323 2 10

VA Matsushita Si-N 2SC2295-A SOT-23 10

VA Matsushita Si-N 2SC3930-A SOT-323 2 10

VA Matsushita Si-N 2SC4626-A SS Mini 1,6 10

VA Toshiba Si-P/N+R RN4601 SOT-163 15

VA Toshiba Si-P/N+R RN4901 SOT-363 2 15

VB Hitachi Si-N 2SC2776-B SOT-23 10

VB Matsushita Si-N 2SC2295-B SOT-23 10

VB Matsushita Si-N 2SC3930-B SOT-323 2 10

V4 … VB

http://www.serwis-elektroniki.com.pl/

Page 238:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

V

VB Matsushita Si-N 2SC4626-B SS Mini 1,6 10

VB Toshiba Si-P/N+R RN4602 SOT-163 15

VB Toshiba Si-P/N+R RN4902 SOT-363 2 15

VC Hitachi Si-N 2SC2776-C SOT-23 10

VC Matsushita Si-N 2SC2295-C SOT-23 10

VC Matsushita Si-N 2SC3930-C SOT-323 2 10

VC Matsushita Si-N 2SC4626-C SS Mini 1,6 10

VC Toshiba Si-P/N+R RN4603 SOT-163 15

VC Toshiba Si-P/N+R RN4903 SOT-363 2 15

VD Fagor Z-Di P6SMB-120C DO-214AA 5 19

VD Sanyo PIN-Di 1SV268 SOT-89 11

VD Thomson Z-Di SM4T6V8C SOD-6 6×4 19

VD Toshiba Si-P/N+R RN4604 SOT-163 15

VD Toshiba Si-P/N+R RN4904 SOT-363 2 15

VE Fagor Z-Di P6SMB-120CA DO-214AA 5 19

VE Thomson Z-Di SM4T6V8CA SOD-6 6×4 19

VE Toshiba Si-P/N+R RN4605 SOT-163 15

VE Toshiba Si-P/N+R RN4905 SOT-363 2 15

VF Fagor Z-Di P6SMB-130C DO-214AA 5 19

VF Thomson Z-Di SM4T7V5C SOD-6 6×4 19

VF Toshiba Si-P/N+R RN4606 SOT-163 15

VF Toshiba Si-P/N+R RN4906 SOT-363 2 15

VG Fagor Z-Di P6SMB-130CA DO-214AA 5 19

VG Thomson Z-Di SM4T7V5CA SOD-6 6×4 19

VG Toshiba P-FET 2SJ106-GR SOT-23 10

VG Toshiba P-FET 2SJ144-GR SOT-323 2 10

VH Fagor Z-Di P6SMB-150C DO-214AA 5 19

VH Toshiba Si-P/N+R RN4607 SOT-163 15

VH Toshiba Si-P/N+R RN4907 SOT-363 2 15

VI Hitachi C-Di 1SV160 SOT-23 10

VI Toshiba Si-P/N+R RN4608 SOT-163 15

VI Toshiba Si-P/N+R RN4908 SOT-363 2 15

VIB Hitachi Si-P 2SA1617-B SOT-23 10

VIC Hitachi Si-P 2SA1617-C SOT-23 10

VJ Toshiba Si-P/N+R RN4609 SOT-163 15

VB … VJ

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Page 239:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

V

VJ Toshiba Si-P/N+R RN4909 SOT-363 2 15

VK Fagor Z-Di P6SMB-150CA DO-214AA 5 19

VK NEC Si-N 2SD1950-VK SOT-89 11

VK Toshiba Si-P/N+R RN4610 SOT-163 15

VK Toshiba Si-P/N+R RN4910 SOT-363 2 15

VL Fagor Z-Di P6SMB-160C DO-214AA 5 19

VL NEC Si-N 2SD1950-VL SOT-89 11

VL Sanyo Si-P 2SA1581 SOT-23 10

VL Toshiba P-FET 2SJ106-BL SOT-23 10

VL Toshiba P-FET 2SJ144-BL SOT-323 2 10

VM Fagor Z-Di P6SMB-160CA DO-214AA 5 19

VM NEC Si-N 2SD1950-VM SOT-89 11

VM Toshiba Si-P/N+R RN4611 SOT-163 15

VM Toshiba Si-P/N+R RN4911 SOT-363 2 15

VN Fagor Z-Di P6SMB-170C DO-214AA 5 19

VN Thomson Z-Di SM4T10C SOD-6 6×4 19

VN Toshiba Si-P/N+R RN4612 SOT-163 15

VO Toshiba Si-N 2SC3803-O SOT-89 11

VP Fagor Z-Di P6SMB-170CA DO-214AA 5 19

VP Matsushita Si-N 2SD968A-P SOT-89 11

VP Thomson Z-Di SM4T10CA SOD-6 6×4 19

VQ Fagor Z-Di P6SMB-180C DO-214AA 5 19

VQ Matsushita Si-N 2SD968A-Q SOT-89 11

VR Fagor Z-Di P6SMB-180CA DO-214AA 5 19

VR Matsushita Si-N 2SD968A-R SOT-89 11

VR Toshiba Si-N 2SC3803-R SOT-89 11

VR1B Toshiba Si-Di TVR1B DO-41 9

VR1D Toshiba Si-Di TVR1D DO-41 9

VR1G Toshiba Si-Di TVR1G DO-41 9

VR1J Toshiba Si-Di TVR1J DO-41 9

VR2B Toshiba Si-Di TVR2B DO-41 9

VR2D Toshiba Si-Di TVR2D DO-41 9

VR2G Toshiba Si-Di TVR2G DO-41 9

VR2J Toshiba Si-Di TVR2J DO-41 9

VR4J Toshiba Si-Di TVR4J DO-14 9

VJ … VR4J

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Page 240:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 231 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

W

VR4L Toshiba Si-Di TVR4L DO-14 9

VR4N Toshiba Si-Di TVR4N DO-14 9

VS Fagor Z-Di P6SMB-200C DO-214AA 5 19

VS Matsushita Si-N 2SD968A-S SOT-89 11

VS Thomson Z-Di SM4T12C SOD-6 6×4 19

VT Fagor Z-Di P6SMB-200CA DO-214AA 5 19

VT Thomson Z-Di SM4T12CA SOD-6 6×4 19

VU Fagor Z-Di P6SMB-220C DO-214AA 5 19

VV Fagor Z-Di P6SMB-220CA DO-214AA 5 19

VW Thomson Z-Di SM4T15C SOD-6 6×4 19

VX Thomson Z-Di SM4T15CA SOD-6 6×4 19

VY Hitachi MOS-N-FET-e 2SK2788 SOT-89 11

VY Sanyo Si-N 2SC3914 SOT-23 10

VY Toshiba Si-N 2SC3803-Y SOT-89 11

VY Toshiba P-FET 2SJ106-Y SOT-23 10

VY Toshiba P-FET 2SJ144-Y SOT-323 2 10

W

W Hitachi Si-Di HSU402J SOD-323 1,7 19

W Matsushita Si-N 2SC5019 SOT-89 11

W Matsushita Si-N 2SD1820 SOT-323 2 10

W Matsushita Si-N 2SD602 SOT-23 10

W Matsushita Si-N 2SD968 SOT-89 11

W01 Thomson Z-Di SMTHDT58 SOD-15 8×5 19

W03 AEG MOS-N-FET-d S503TRW SOT-343 2 13

W03 Thomson Z-Di SMTHDT80 SOD-15 8×5 19

W04 AEG MOS-N-FET-d S504TRW SOT-343 2 13

W05 AEG MOS-N-FET-d S505TRW SOT-343 2 13

W05 AEG Si-N TSDF1205RW SOT-343 2 13

W05 Thomson Z-Di SMTHDT120 SOD-15 8×5 19

W07 Thomson Z-Di SMTPB62 SOD-15 8×5 19

W1 Philips Si-P BFT92W SOT-323 2 10

W1 Rohm Si-N FMW1 SOT-153 14

W1 Rohm Si-N UMW1N SOT-353 2 14

W1 Philips Si-P BFT92 SOT-23 10 BFQ51

VR4L … W1

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Page 241:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

W

W1 Siemens Si-P BFT92 SOT-23 10 BFQ51

W10 Rohm Si-N FMW10 SOT-153 14

W10 Rohm Si-N UMW10N SOT-353 2 14

W1002A Hitachi Si-Di HRW1002A TO-262, 263 8

W1002B Hitachi Si-Di HRW1002B SOT-186 4

W11 Rohm Si-N FMW11 SOT-153 14

W11 Rohm Si-N UMW11N SOT-353 2 14

W11 Thomson Z-Di SMTPB68 SOD-15 8×5 19

W12 Rohm Si-N FMW12 SOT-153 14

W12 Rohm Si-N UMW12N SOT-353 2 14

W13 AEG MOS-N-FET-d S913TRW SOT-343 2 13

W13 Rohm Si-N FMW13 SOT-153 14

W13 Rohm Si-N UMW13N SOT-353 2 14

W17 Thomson Z-Di SMTPB100 SOD-15 8×5 19

W18 AEG Si-N BFP181TW, TRW SOT-343 2 13

W19 AEG Si-N BFP193TRW SOT-343 2 13

W1s Siemens Si-N/P BCR10PN SOT-363 2 15

W1s Siemens Si-P BFT92W SOT-323 2 10

W2 Rohm Si-N FMW2 SOT-153 14

W2 Rohm Si-N UMW2N SOT-353 2 14

W2 Siemens Si-St BZV49/C0V8 SOT-89 11

W2 Siemens Si-St BZX84/C0V8 SOT-23 10

W21 Thomson Z-Di SMTPB120 SOD-15 8×5 19

W22 AEG Si-N S822TW, TRW SOT-343 2 13

W23 Thomson Z-Di SMTPB130 SOD-15 8×5 19

W2502A Hitachi Si-Di HRW2502A TO-262, 263 8

W2502B Hitachi Si-Di HRW2502B SOT-186 4

W28 AEG Si-N BFP280TW, TRW SOT-343 2 13

W29 Thomson Z-Di SMTPB180 SOD-15 8×5 19

W2F AEG Si-N TSDF1220RW SOT-343 2 13

W3 Rohm Si-N FMW3 SOT-153 14

W3 Rohm Si-N UMW3N SOT-353 2 14

W3 Siemens Z-Di BZV49/C2V4 SOT-89 11

W3 Siemens Z-Di BZX84/C2V4 SOT-23 10 BZX79C2V4/350mW

W31 Thomson Z-Di SMTPB200 SOD-15 8×5 19

W1 … W31

http://www.serwis-elektroniki.com.pl/

Page 242:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 233 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

W

W35 Thomson Z-Di SMTPB220 SOD-15 8×5 19

W39 Thomson Z-Di SMTPB240 SOD-15 8×5 19

W4 Ferranti Z-Di BZX88/C2V7 SOT-323 2 10

W4 Philips Si-P BFT92B SOT-23 10

W4 Rohm Si-N FMW4 SOT-153 14

W4 Rohm Si-N UMW4N SOT-353 2 14

W4 Siemens Si-P BFT92B SOT-23 10

W4 Siemens Z-Di BZV49/C2V7 SOT-89 11

W4 Siemens Z-Di BZX84/C2V7 SOT-23 10 BZX79C2V7/350mW

W4 Valvo Si-P BFT92R SOT-23 10

W4200 Thomson Si-Di BYW4200 TO-252 8

W43 Thomson Z-Di SMTPB270 SOD-15 8×5 19

W4S Siemens Si-P BCR400R SOT-143 13

W4S Siemens Si-P BCR400W SOT-143 2 13

W5 Ferranti Z-Di BZX88/C3V0 SOT-323 2 10

W5 Rohm Si-N FMW5 SOT-153 14

W5 Rohm Si-N UMW5N SOT-353 2 14

W5 Siemens Z-Di BZV49/C3V0 SOT-89 11

W5 Siemens Z-Di BZX84/C3V0 SOT-23 10 BZX79C3V0/350mW

W52 AEG Si-N S852TW SOT-323 2 10

W59 AEG MOS-N-FET-d S595TRW SOT-343 2 13

W5F AEG Si-N TSDF1250RW SOT-343 2 13

W6 Ferranti Z-Di BZX88/C3V3 SOT-323 2 10

W6 Rohm Si-N FMW6 SOT-153 14

W6 Rohm Si-N UMW6N SOT-353 2 14

W6 Siemens Z-Di BZV49/C3V3 SOT-89 11

W6 Siemens Z-Di BZX84/C3V3 SOT-23 10 BZX79C3V3/350mW

W67 AEG Si-N BFP67W SOT-343 2 13

W7 Ferranti Z-Di BZX88/C3V6 SOT-323 2 10

W7 Rohm Si-N FMW7 SOT-153 14

W7 Rohm Si-N UMW7N SOT-353 2 14

W7 Siemens Z-Di BZV49/C3V6 SOT-89 11

W7 Siemens Z-Di BZX84/C3V6 SOT-23 10 BZX79C3V6/350mW

W8 Ferranti Z-Di BZX88/C3V9 SOT-323 2 10

W8 Rohm Si-N FMW8 SOT-153 14

W35 … W8

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Page 243:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

W

W8 Rohm Si-N UMW8N SOT-353 2 14

W8 Siemens Z-Di BZV49/C3V9 SOT-89 11

W8 Siemens Z-Di BZX84/C3V9 SOT-23 10 BZX79C3V9/350mW

W82 AEG Si-N BFP182TW, TRW SOT-343 2 13

W83 AEG Si-N BFP183TW, TRW SOT-343 2 13

W9 Ferranti Z-Di BZX88/C4V3 SOT-323 2 10

W9 Rohm Si-N FMW9 SOT-153 14

W9 Rohm Si-N UMW9N SOT-353 2 14

W9 Siemens Z-Di BZV49/C4V3 SOT-89 11

W9 Siemens Z-Di BZX84/C4V3 SOT-23 10 BZX79C4V3/350mW

W91 AEG Si-N BFP193TW SOT-343 2 13

W92 AEG Si-N BFP92AW SOT-343 2 13

W93 AEG MOS-N-FET-d S593TRW SOT-343 2 13

W94 AEG MOS-N-FET-d S594TRW SOT-343 2 13

W99 AEG MOS-N-FET-d S949TRW SOT-343 2 13

WA Rohm Si-N-Darl 2SD1383K-A SOT-23 10

WA Rohm Si-N-Darl 2SD1383-WA (MMT) ~10

WA Toshiba Si-N HN3C01F SOT-163 15

WAO KEC Si-N KTC3920-O SOT-23 10

WAY KEC Si-N KTC3920-Y SOT-23 10

WB Rohm Si-N-Darl 2SD1383K-B SOT-23 10

WB Rohm Si-N-Darl 2SD1383K-WB (MMT) ~10

WB Toshiba Si-N HN3C02F SOT-163 15

WC Toshiba Si-N HN3C03F SOT-163 15

WCs Siemens Si-N+R BCR133 SOT-23 10 KSR1102

WCs Siemens Si-N+R BCR133S SOT-363 2 15

WCs Siemens Si-N+R BCR133W SOT-363 2 15

WD2 Siliconix MOS-N-FET-d TSDF52424 SOT-363 2 15

WD3 Siliconix MOS-N-FET-d TSDF53030 SOT-363 2 15

WD4 Siliconix MOS-N-FET-d TSDF54040 SOT-363 2 15

WDs Siemens Si-N+R BCR141 SOT-23 10 KSR1103

WDs Siemens Si-N+R BCR141S SOT-363 2 15

WDs Siemens Si-N+R BCR141W SOT-323 2 10

WE Hitachi N-FET 2SK322-E SOT-23 10

WE Toshiba Si-N HN3C06F SOT-163 15

W8 … WE

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

W

WEs Siemens Si-N BCR148 SOT-23 10 KSR1104

WEs Siemens Si-N+R BCR148S SOT-363 2 15

WEs Siemens Si-N+R BCR148W SOT-323 2 10

WF Hitachi N-FET 2SK322-F SOT-23 10

WF Toshiba Si-N HN3C07F SOT-163 15

WF0 AEG Si-N TSDF1205W SOT-343 2 13

WF1 AEG Si-N BFS17W SOT-323 2 10

WF2 AEG Si-N BFS17AW SOT-323 2 10

WF2 AEG Si-N TSDF1220W SOT-343 2 13

WF5 AEG Si-N TSDF1250W SOT-343 2 13

WFE AEG Si-N BFP93AW SOT-343 2 13

WFs Siemens Si-N/P BCR08PN SOT-363 2 15

WFs Siemens Si-N+R BCR112 SOT-23 10 KSR1101

WG Hitachi N-FET 2SK322-G SOT-23 10

WG Toshiba Si-N HN3C08F SOT-163 15

WGs Siemens Si-N+R BCR116 SOT-23 10

WGs Siemens Si-N+R BCR116W SOT-323 2 10

WH Hitachi N-FET BSK322-H SOT-23 10

WHs Siemens Si-N+R BCR108 SOT-23 10

WHs Siemens Si-N+R BCR108S SOT-363 2 15

WHs Siemens Si-N+R BCR108W SOT-363 2 15

WI- Hitachi MOS-N-FET-d 3SK197 SOT-143 13

WIs Siemens Si-P+R BCR158 SOT-23 10

WIs Siemens Si-P+R BCR158W SOT-323 2 10

WJS Siemens Si-N+R BCR135 SOT-23 10 KSR1106

WJS Siemens Si-N+R BCR135S SOT-363 2 15

WJS Siemens Si-N+R BCR135W SOT-363 2 15

WKS Siemens Si-N+R BCR119 SOT-23 10 KSR1109

WKS Siemens Si-N+R BCR119S SOT-363 2 15

WL Sanyo Si-P 2SA1589 SOT-23 10

WLs Siemens Si-N+R BCR146 SOT-23 10 KSR1108

WLs Siemens Si-N+R BCR146W SOT-323 2 10

WM Thomson Z-Di SM4T68C SOD-6 6×4 19

WMs Siemens Si-P+R BCR183 SOT-23 10 KSR2102

WMs Siemens Si-P+R BCR183S SOT-363 2 15

WEs … WMs

http://www.serwis-elektroniki.com.pl/

Page 245:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

W

WNs Siemens Si-P+R BCR185 SOT-23 10 KSR2106

WNs Siemens Si-P+R BCR185S SOT-363 2 15

WNs Siemens Si-P+R BCR185W SOT-323 2 10

WO KEC Si-P KTA1666-O SOT-89 11

WO KEC Si-N KTC3876-O SOT-23 10

WO KEC Si-N KTC4076-O SOT-323 2 10

WO Philips Z-Di BZX284-B2V4 SOD-110 1,25×2 19

WO Toshiba Si-P 2SA1483-O SOT-89 11

WO Toshiba Si-N 2SC2859-O SOT-23 10

WO Toshiba Si-P 2SC4118-O SOT-323 2 10

WOs Siemens Si-P+R BCR191 SOT-23 10 KSR2103

WOs Siemens Si-P+R BCR191S SOT-363 2 15

WP Hitachi N-FET 2SK322-P SOT-23 10

WP Matsushita Si-N 2SD968-P SOT-89 11

WP Philips Z-Di BZX284-B2V7 SOD-110 1,25×2 19

WP Thomson Z-Di SM4T68CA SOD-6 6×4 19

WP2 AEG Si-N BFR92AW SOT-323 2 10

WPs Siemens Si-P+R BCR192 SOT-23 10 KSR2107

WPs Siemens Si-N/P BCR22PN SOT-363 2 15

WQ Hitachi N-FET 2SK322-Q SOT-23 10

WQ Matsushita Si-N 2SD1820-Q SOT-323 2 10

WQ Matsushita Si-N 2SD2432-Q (T Mini) ~10

WQ Matsushita Si-N 2SD602-Q SOT-23 10

WQ Matsushita Si-N 2SD968-Q SOT-89 11

WQ Philips Si-N 2PD602Q SOT-23 10

WQ Philips Z-Di BZX284-B3V0 SOD-110 1,25×2 19

WR Hitachi N-FET 2SK322-R SOT-23 10

WR Matsushita Si-N 2SD1820-R SOT-323 2 10

WR Matsushita Si-N 2SD2432-R (T Mini) ~10

WR Matsushita Si-N 2SD602-R SOT-23 10

WR Matsushita Si-N 2SD968-R SOT-89 11

WR Philips Si-N 2PD602R SOT-23 10

WR Philips Z-Di BZX284-B3V3 SOD-110 1,25×2 19

WR Toshiba Si-P 2SA1483-R SOT-89 11

WR2 AEG Si-N BFR93AW SOT-323 2 10

WNs … WR2

http://www.serwis-elektroniki.com.pl/

Page 246:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

W

WRC AEG Si-N BFR193TRW SOT-323 2 10

WRE AEG Si-N BFR280TW SOT-323 2 10

WRF AEG Si-N BFR181TW SOT-323 2 10

WRG AEG Si-N BFR182TW SOT-323 2 10

WRH AEG Si-N BFR183TW SOT-323 2 10

WRs Siemens Si-P+R BCR198 SOT-23 10 KSR2104

WRs Siemens Si-P+R BCR198S SOT-363 2 15

WRs Siemens Si-P+R BCR198W SOT-323 2 10

WS Hitachi N-FET 2SK322-S SOT-23 10

WS Matsushita Si-N 2SD1820-S SOT-323 2 10

WS Matsushita Si-N 2SD2432-S (T Mini) ~10

WS Matsushita Si-N 2SD602-S SOT-23 10

WS Matsushita Si-N 2SD968-S SOT-89 11

WS Philips Si-N 2PD602S SOT-23 10

WS Philips Z-Di BZX284-B3V6 SOD-110 1,25×2 19

WS2 AEG Si-N S822TRW SOT-343 2 13

WSE AEG Si-N BFP280TRW SOT-343 2 13

WSH AEG Si-N BFP183TRW SOT-343 2 13

WSs Siemens Si-P+R BCR169 SOT-23 10

WSs Siemens Si-P+R BCR169S SOT-363 2 15

WT Hitachi N-FET 2SK322-T SOT-23 10

WT Philips Z-Di BZX284-B3V9 SOD-110 1,25×2 19

WT Sanyo Si-N 2SC4694 SOT-323 2 10

WT Sanyo Si-N 2SC4695 SOT-23 10

WTs Siemens Si-P+R BCR166 SOT-23 10

WTs Siemens Si-P+R BCR166W SOT-323 2 10

WTs Siemens Si-N/P BCR48PN SOT-363 2 15

WU Philips Z-Di BZX284-B4V3 SOD-110 1,25×2 19

WUs Siemens Si-P+R BCR162 SOT-23 10

WUs Siemens Si-N/P BCR35PN SOT-363 2 15

WV Philips Z-Di BZX284-B4V7 SOD-110 1,25×2 19

WV- Hitachi GaAs-N-FET 2SK2752 SOT-143 13

WV2 AEG Si-N BVQ67W SOT-323 2 10

WW Philips Z-Di BZX284-B5V1 SOD-110 1,25×2 19

WW Thomson Z-Di SM4T100C SOD-6 6×4 19

WRC … WW

http://www.serwis-elektroniki.com.pl/

Page 247:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

X

WX Philips Z-Di BZX284-B5V6 SOD-110 1,25×2 19

WX Thomson Z-Di SM4T100CA SOD-6 6×4 19

WXs Siemens Si-P+R BCR196 SOT-23 10

WXs Siemens Si-P+R BCR196W SOT-323 2 10

WY Hitachi MOS-P-FET-e 2SJ484 SOT-89 11

WY KEC Si-P KTA1666-Y SOT-89 11

WY KEC Si-N KTC3876-Y SOT-23 10

WY KEC Si-N KTC4076-Y SOT-323 2 10

WY Philips Z-Di BZX284-B6V2 SOD-110 1,25×2 19

WY Sanyo Si-N 2SC3915 SOT-23 10

WY Toshiba Si-P 2SA1483-Y SOT-89 11

WY Toshiba Si-N 2SC2859-Y SOT-23 10

WY Toshiba Si-P 2SC4118-Y SOT-323 2 10

WZ Philips Z-Di BZX284-B6V8 SOD-110 1,25×2 19

WZs Siemens Si-N+R BCR142 SOT-23 10 KSR1107

WZs Siemens Si-N+R BCR142W SOT-323 2 10

X

X Matsushita Si-N 2SD1820A SOT-323 2 10

X Matsushita Si-N 2SD602A SOT-23 10

X Matsushita Si-N 2SD875 SOT-89 11

X1 Ferranti Z-Di BZX88/C27 SOT-323 2 10

X1 NEC N-FET 2SK852-X2 SOT-323 2 10

X1 NEC N-FET 2SK94-1 SOT-23 10

X1 Philips Si-P BFT93W SOT-323 2 10

X1 Rohm Si-N IMX1 SOT-163 15

X1 Rohm Si-N UMX1N SOT-363 2 15

X1 Siemens Z-Di BZV49/C27 SOT-89 11

X1 Siemens Z-Di BZX84/C27 SOT-23 10

X1 Philips Si-P BFT93 SOT-23 10 BFQ23

X1 Siemens Si-P BFT93 SOT-23 10 BFQ23

X11 NEC N-FET 2SK425-X11 SOT-23 10

X11 Rohm Si-N IMX11 SOT-163 15

X11 Rohm Si-N UMX11 SOT-363 2 15

X12 NEC N-FET 2SK425-X12 SOT-23 10

WX … X12

http://www.serwis-elektroniki.com.pl/

Page 248:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

X

X13 NEC N-FET 2SK425-X13 SOT-23 10

X14 NEC N-FET 2SK425-X14 SOT-23 10

X15 NEC N-FET 2SK425-X15 SOT-23 10

X16 NEC N-FET 2SK425-X16 SOT-23 10

X17 NEC N-FET 2SK425-X17 SOT-23 10

X17 Rohm Si-N IMX17 SOT-163 15

X18 NEC N-FET 2SK425-X18 SOT-23 10

X2 Ferranti Z-Di BZX88/C30 SOT-323 2 10

X2 NEC N-FET 2SK852-X2 SOT-323 2 10

X2 NEC N-FET 2SK94-2 SOT-23 10

X2 Rohm Si-N IMX2 SOT-163 15

X2 Rohm Si-N UMX2N SOT-363 2 15

X2 Siemens Z-Di BZV49/C30 SOT-89 11

X2 Siemens Z-Di BZX84/C30 SOT-23 10

X21 NEC N-FET 2SK426-X21 SOT-23 10

X22 NEC N-FET 2SK426-X22 SOT-23 10

X23 NEC N-FET 2SK426-X23 SOT-23 10

X24 NEC N-FET 2SK426-X24 SOT-23 10

X25 NEC N-FET 2SK426-X25 SOT-23 10

X26 NEC N-FET 2SK426-X26 SOT-23 10

X27 NEC N-FET 2SK426-X27 SOT-23 10

X28 NEC N-FET 2SK426-X28 SOT-23 10

X3 Ferranti Z-Di BZX88/C33 SOT-323 2 10

X3 NEC N-FET 2SK852-X3 SOT-323 2 10

X3 NEC N-FET 2SK94-3 SOT-23 10

X3 Rohm Si-N IMX3 SOT-163 15

X3 Rohm Si-N UMX3N SOT-363 2 15

X3 Siemens Z-Di BZV49/C33 SOT-89 11

X3 Siemens Z-Di BZX84/C33 SOT-23 10

X31 NEC N-FET 2SK515-X31 SOT-23 10

X32 NEC N-FET 2SK515-X32 SOT-23 10

X33 NEC N-FET 2SK515-X33 SOT-23 10

X34 NEC N-FET 2SK515-X34 SOT-23 10

X35 NEC N-FET 2SK515-X35 SOT-23 10

X4 Ferranti Z-Di BZX88/C36 SOT-323 2 10

X13 … X4

http://www.serwis-elektroniki.com.pl/

Page 249:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 240 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

X

X4 NEC N-FET 2SK852-X4 SOT-323 2 10

X4 NEC N-FET 2SK94-4 SOT-23 10

X4 Philips Si-P BFT93R SOT-23 10

X4 Rohm Si-N IMX4 SOT-163 15

X4 Rohm Si-N UMX4N SOT-363 2 15

X4 Siemens Si-P BFT93R SOT-23 10

X4 Siemens Z-Di BZV49/C36 SOT-89 11

X4 Siemens Z-Di BZX84/C36 SOT-23 10

X4 Valvo Si-P BFT93R SOT-23 10

X41 NEC N-FET 2SK1001-X41 SOT-23 10

X42 NEC N-FET 2SK1001-X42 SOT-23 10

X43 NEC N-FET 2SK1001-X43 SOT-23 10

X5 Ferranti Z-Di BZX88/C39 SOT-323 2 10

X5 Motorola C-Di MMBV409 SOT-23 10

X5 Rohm Si-N IMX5 SOT-163 15

X5 Rohm Si-N UMX5N SOT-363 2 15

X5 Siemens Z-Di BZV49/C39 SOT-89 11

X5 Siemens Z-Di BZX84/C39 SOT-23 10

X6 Ferranti Z-Di BZX88/C43 SOT-323 2 10

X6 Rohm Si-N IMX6 SOT-163 15

X6 Rohm Si-N UMX6 SOT-363 2 15

X6 Sanyo Si-N 2SD1048-X6 SOT-23 10

X6 Siemens Z-Di BZV49/C43 SOT-89 11

X6 Siemens Z-Di BZX84/C43 SOT-23 10

X7 Ferranti Z-Di BZX88/C47 SOT-323 2 10

X7 Sanyo Si-N 2SD1048-X7 SOT-23 10

X7 Siemens Z-Di BZV49/C47 SOT-89 11

X7 Siemens Z-Di BZX84/C47 SOT-23 10

X8 Rohm Si-N IMX8 SOT-163 15

X8 Sanyo Si-N 2SD1048-X8 SOT-23 10

X9 Rohm Si-N IMX9 SOT-163 15

X9 Toshiba Si-Di 1SS398 SOT-23 10

XA NEC MOS-N-FET-e* 2SK3105 SOT-23 10

XA NEC MOS-N-FET-e* 2SK3408 SOT-23 10

XA Philips Z-Di BZX284-B7V5 SOD-110 1,25×2 19

X4 … XA

http://www.serwis-elektroniki.com.pl/

Page 250:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

X

XA Toshiba Si-N+R RN1101 SS Mini 1,6 10

XA Toshiba Si-N+R RN1301 SOT-323 2 10

XA Toshiba Si-N+R RN1401 SOT-23 10

XA Toshiba Si-N+R RN1501 SOT-153 14

XA Toshiba Si-N+R RN1601 SOT-163 15

XA Toshiba Si-N+R RN1701 SOT-353 2 14

XA Toshiba Si-N+R RN1901 SOT-363 2 15

XA Toshiba Si-N+R RN5001 SOT-89 11

XAF Hitachi N-FET 2SK980-F SOT-23 10

XAG Hitachi N-FET 2SK980-G SOT-23 10

XAs Siemens Si-N+R BCR503 SOT-23 10

XB NEC MOS-P-FET-e* 2SJ557 SOT-23 10

XB Philips Z-Di BZX284-B8V2 SOD-110 1,25×2 19

XB Toshiba Si-N+R RN1102 SS Mini 1,6 10

XB Toshiba Si-N+R RN1302 SOT-323 2 10

XB Toshiba Si-N+R RN1402 SOT-23 10

XB Toshiba Si-N+R RN1502 SOT-153 14

XB Toshiba Si-N+R RN1602 SOT-163 15

XB Toshiba Si-N+R RN1702 SOT-353 2 14

XB Toshiba Si-N+R RN1902 SOT-363 2 15

XB Toshiba Si-N+R RN5002 SOT-89 11

XB- Hitachi Si-N 2SC4416 SOT-23 10

XBs Siemens Si-P+R BCR553 SOT-23 10

XC Hitachi N-FET 2SK492-C SOT-23 10

XC Philips Z-Di BZX284-B9V1 SOD-110 1,25×2 19

XC Toshiba Si-N+R RN1103 SS Mini 1,6 10

XC Toshiba Si-N+R RN1303 SOT-323 2 10

XC Toshiba Si-N+R RN1403 SOT-23 10

XC Toshiba Si-N+R RN1503 SOT-153 14

XC Toshiba Si-N+R RN1603 SOT-163 15

XC Toshiba Si-N+R RN1703 SOT-353 2 14

XC Toshiba Si-N+R RN1903 SOT-363 2 15

XC Toshiba Si-N+R RN5003 SOT-89 11

XC- Hitachi Si-N 2SC4415 SOT-143 13

XCs Siemens Si-N+R BCR533 SOT-23 10

XA … XCs

http://www.serwis-elektroniki.com.pl/

Page 251:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

X

XD Hitachi N-FET 2SK492-D SOT-23 10

XD Philips Z-Di BZX284-B10 SOD-110 1,25×2 19

XD Toshiba Si-N+R RN1104 SS Mini 1,6 10

XD Toshiba Si-N+R RN1304 SOT-323 2 10

XD Toshiba Si-N+R RN1404 SOT-23 10

XD Toshiba Si-N+R RN1504 SOT-153 14

XD Toshiba Si-N+R RN1604 SOT-163 15

XD Toshiba Si-N+R RN1704 SOT-353 2 14

XD Toshiba Si-N+R RN1904 SOT-363 2 15

XDB Hitachi N-FET 2SK1031-B SOT-23 10

XDB Hitachi N-FET 2SK1532-B SOT-323 2 10

XDC Hitachi N-FET 2SK1031-C SOT-23 10

XDC Hitachi N-FET 2SK1532-C SOT-323 2 10

XDD Hitachi N-FET 2SK1031-D SOT-23 10

XDD Hitachi N-FET 2SK1532-D SOT-323 2 10

XDs Siemens Si-P+R BCR555 SOT-23 10

XE Hitachi N-FET 2SK492-E SOT-23 10

XE Philips Z-Di BZX284-B11 SOD-110 1,25×2 19

XE Toshiba Si-N+R RN1105 SS Mini 1,6 10

XE Toshiba Si-N+R RN1305 SOT-323 2 10

XE Toshiba Si-N+R RN1405 SOT-23 10

XE Toshiba Si-N+R RN1505 SOT-153 14

XE Toshiba Si-N+R RN1605 SOT-163 15

XE Toshiba Si-N+R RN1705 SOT-353 2 14

XE Toshiba Si-N+R RN1905 SOT-363 2 15

XE- Hitachi GaAs-N-FET 2SK1092 SOT-143 13

XF Philips Z-Di BZX284-B12 SOD-110 1,25×2 19

XF Toshiba Si-N+R RN1106 SS Mini 1,6 10

XF Toshiba Si-N+R RN1306 SOT-323 2 10

XF Toshiba Si-N+R RN1406 SOT-23 10

XF Toshiba Si-N+R RN1506 SOT-153 14

XF Toshiba Si-N+R RN1606 SOT-163 15

XF Toshiba Si-N+R RN1706 SOT-353 2 14

XF Toshiba Si-N+R RN1906 SOT-363 2 15

XF Toshiba Si-N+R RN5006 SOT-89 11

XD … XF

http://www.serwis-elektroniki.com.pl/

Page 252:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

X

XF- Hitachi Si-N 2SC4464 SOT-323 2 10

XFs Siemens Si-N+R BCR512 SOT-23 10

XG KEC N-FET KTK209-G SOT-23 10

XG Philips Z-Di BZX284-B13 SOD-110 1,25×2 19

XG Toshiba N-FET 2SK209-GR SOT-23 10

XG Toshiba N-FET 2SK2145-GR SOT-153 14

XG Toshiba N-FET 2SK880-GR SOT-323 2 10

XGs Siemens Si-N+R BCR523 SOT-23 10

XH Philips Z-Di BZX284-B15 SOD-110 1,25×2 19

XH Thomson Z-Di SM4T150C SOD-6 6×4 19

XH Toshiba Si-N+R RN1107 SS Mini 1,6 10

XH Toshiba Si-N+R RN1307 SOT-323 2 10

XH Toshiba Si-N+R RN1407 SOT-23 10

XH Toshiba Si-N+R RN1507 SOT-153 14

XH Toshiba Si-N+R RN1607 SOT-163 15

XH Toshiba Si-N+R RN1707 SOT-353 2 14

XH Toshiba Si-N+R RN1907 SOT-363 2 15

XHs Siemens Si-P+R BCR573 SOT-23 10

XI Philips Z-Di BZX284-B16 SOD-110 1,25×2 19

XI Toshiba Si-N+R RN1108 SS Mini 1,6 10

XI Toshiba Si-N+R RN1308 SOT-323 2 10

XI Toshiba Si-N+R RN1408 SOT-23 10

XI Toshiba Si-N+R RN1508 SOT-153 14

XI Toshiba Si-N+R RN1608 SOT-163 15

XI Toshiba Si-N+R RN1708 SOT-353 2 14

XI Toshiba Si-N+R RN1908 SOT-363 2 15

XI- Hitachi MOS-N-FET-d 3SK196 SOT-143 13

XJ Philips Z-Di BZX284-B18 SOD-110 1,25×2 19

XJ Sanyo MOS-N-FET-e 2SK2273 SOT-23 10

XJ Toshiba Si-N+R RN1109 SS Mini 1,6 10

XJ Toshiba Si-N+R RN1309 SOT-323 2 10

XJ Toshiba Si-N+R RN1409 SOT-23 10

XJ Toshiba Si-N+R RN1509 SOT-153 14

XJ Toshiba Si-N+R RN1609 SOT-163 15

XJ Toshiba Si-N+R RN1709 SOT-353 2 14

XF … XJ

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- 244 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

X

XJ Toshiba Si-N+R RN1909 SOT-363 2 15

XJD Hitachi N-FET 2SK1326-D SOT-23 10

XJE Hitachi N-FET 2SK1326-E SOT-23 10

XK NEC Si-N 2SD1614-XK SOT-89 11

XK Philips Z-Di BZX284-B20 SOD-110 1,25×2 19

XK Thomson Z-Di SM4T150CA SOD-6 6×4 19

XK Toshiba Si-N+R RN1110 SS Mini 1,6 10

XK Toshiba Si-N+R RN1310 SOT-323 2 10

XK Toshiba Si-N+R RN1410 SOT-23 10

XK Toshiba Si-N+R RN1510 SOT-153 14

XK Toshiba Si-N+R RN1610 SOT-163 15

XK Toshiba Si-N+R RN1710 SOT-353 2 14

XK Toshiba Si-N+R RN1910 SOT-363 2 15

XKs Siemens Si-N+R BCR519 SOT-23 10

XL KEC N-FET KTK209-L SOT-23 10

XL NEC Si-N 2SD1614-XL SOT-89 11

XL Philips Z-Di BZX284-B22 SOD-110 1,25×2 19

XL Sanyo Si-P 2SA1597 SOT-23 10

XL Toshiba N-FET 2SK209-BL SOT-23 10

XL Toshiba N-FET 2SK2145-L SOT-153 14

XL Toshiba N-FET 2SK880-BL SOT-323 2 10

XLA Hitachi N-FET 2SK1479-A SOT-23 10

XLB Hitachi N-FET 2SK1479-B SOT-23 10

XLs Siemens Si-P+R BCR569 SOT-23 10

XM NEC Si-N 2SD1614-XM SOT-89 11

XM Philips Z-Di BZX284-B24 SOD-110 1,25×2 19

XM Toshiba Si-N+R RN1111 SS Mini 1,6 10

XM Toshiba Si-N+R RN1311 SOT-323 2 10

XM Toshiba Si-N+R RN1411 SOT-23 10

XM Toshiba Si-N+R RN1511 SOT-153 14

XM Toshiba Si-N+R RN1611 SOT-163 15

XM Toshiba Si-N+R RN1711 SOT-353 2 14

XM Toshiba Si-N+R RN1911 SOT-363 2 15

XM- Hitachi Si-N 2SC4591 SOT-23 10

XM- Hitachi Si-N 2SC4593 SOT-323 2 10

XJ … XM

http://www.serwis-elektroniki.com.pl/

Page 254:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 245 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

X

XMs Siemens Si-P+R BCR583 SOT-23 10

XN Philips Z-Di BZX284-B27 SOD-110 1,25×2 19

XN Toshiba Si-N 2SD1784 SOT-89 11

XN- Hitachi Si-N 2SC4592 SOT-143 13

XO KEC N-FET KTK209-O SOT-23 10

XO Philips Z-Di BZX284-B30 SOD-110 1,25×2 19

XO Toshiba N-FET 2SK209-O SOT-23 10

XP Matsushita Si-N 2SD875-P SOT-89 11

XP Philips Z-Di BZX284-B33 SOD-110 1,25×2 19

XQ Matsushita Si-N 2SD1820A-Q SOT-323 2 10

XQ Matsushita Si-N 2SD602A-Q SOT-23 10

XQ Matsushita Si-N 2SD875-Q SOT-89 11

XQ Philips Si-N 2PD602AQ SOT-23 10

XQ Philips Z-Di BZX284-B36 SOD-110 1,25×2 19

XR Hitachi MOS-N-FET-d 3SK239A SOT-343 2 13

XR Matsushita Si-N 2SD1820A-R SOT-323 2 10

XR Matsushita Si-N 2SD602A-R SOT-23 10

XR Matsushita Si-N 2SD875-R SOT-89 11

XR Philips Si-N 2PD602AR SOT-23 10

XR Philips Z-Di BZX284-B39 SOD-110 1,25×2 19

XR- Hitachi GaAs-N-FET-d 3SK228 SOT-143 13

XS Matsushita Si-N 2SD1820A-S SOT-323 2 10

XS Matsushita Si-N 2SD602A-S SOT-23 10

XS Matsushita Si-N 2SD875-S SOT-89 11

XS Philips Si-N 2PD602AS SOT-23 10

XS Philips Z-Di BZX284-B43 SOD-110 1,25×2 19

XS Thomson Z-Di SM4T200C SOD-6 6×4 19

XS- Hitachi GaAs-N-FET-d 3SK229 SOT-143 13

XT Philips Z-Di BZX284-B47 SOD-110 1,25×2 19

XT Thomson Z-Di SM4T200CA SOD-6 6×4 19

XT- Hitachi Si-N 2SC4674 SOT-323 2 10

XU Philips Z-Di BZX284-B51 SOD-110 1,25×2 19

XU- Hitachi Si-N 2SC4680 SOT-23 10

XUs Siemens Si-P+R BCR562 SOT-23 10

XV Philips Z-Di BZX284-B56 SOD-110 1,25×2 19

XMs … XV

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Page 255:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 246 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

XV- Hitachi Si-N 2SC4702 SOT-23 10

XV- Hitachi GaAs-N-FET-d 3SK309 SOT-343 2 13

XVs Siemens Si-N+R BCR521 SOT-23 10

XW Philips Z-Di BZX284-B62 SOD-110 1,25×2 19

XW- Hitachi MOS-N-FET-d 3SK233 SOT-143 13

XW- Hitachi MOS-N-FET-d 3SK238 SOT-343 2 13

XWs Siemens Si-N+R BCR505 SOT-23 10

XX Philips Z-Di BZX284-B68 SOD-110 1,25×2 19

XX- Hitachi MOS-N-FET-d 3SK234 SOT-143 13

XX- Hitachi MOS-N-FET-d 3SK236 SOT-343 2 13

XXA Toshiba Si-N+R RN1961 SOT-363 2 15

XXB Toshiba Si-N+R RN1962 SOT-363 2 15

XXC Toshiba Si-N+R RN1963 SOT-363 2 15

XXD Toshiba Si-N+R RN1964 SOT-363 2 15

XXE Toshiba Si-N+R RN1965 SOT-363 2 15

XXF Toshiba Si-N+R RN1966 SOT-363 2 15

XXH Toshiba Si-N+R RN1967 SOT-363 2 15

XXI Toshiba Si-N+R RN1968 SOT-363 2 15

XXJ Toshiba Si-N+R RN1969 SOT-363 2 15

XXK Toshiba Si-N+R RN1970 SOT-363 2 15

XXM Toshiba Si-N+R RN1971 SOT-363 2 15

XXs Siemens Si-P+R BCR571 SOT-23 10

XY KEC N-FET KTK209-Y SOT-23 10

XY Philips Z-Di BZX284-B75 SOD-110 1,25×2 19

XY Sanyo Si-N 2SD1851 SOT-23 10

XY Toshiba N-FET 2SK209-Y SOT-23 10

XY Toshiba N-FET 2SK2145-Y SOT-153 14

XY Toshiba N-FET 2SK880-Y SOT-323 2 10

XY- Hitachi MOS-N-FET-d 3SK235 SOT-143 13

XY- Hitachi MOS-N-FET-d 3SK237 SOT-343 2 13

Y

Y Hitachi Si-Di HRU0203A SOD-323 1,7 19

Y Matsushita Si-N 2SD2216 SC-75 1,6 10

Y Matsushita Si-N 2SD2216J SC-81 1,6 10

XV … Y

http://www.serwis-elektroniki.com.pl/

Page 256:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 247 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

Y Matsushita Si-N 2SD874A SOT-89 11

Y Matsushita Si-Di MA2S707 SOD-523 1,3 19

Y0s Siemens GaAs-FET-IC CGY121B (MW-6) ~15

Y1 Ferranti Z-Di BZX88/C11 SOT-323 2 10

Y1 Rohm Si-P/N FMY1A SOT-153 14

Y1 Rohm Si-P/N UMY1N SOT-353 2 14

Y1 Siemens Z-Di BZV49/C11 SOT-89 11

Y1 Siemens Z-Di BZX84/C11 SOT-23 10 BZX79C11/350mW

Y1 Valvo Z-Di BZX84/C11 SOT-23 10

Y10 Siemens Z-Di BZX84/C27 SOT-23 10 BZX79C27/350mW

Y10 Thomson Z-Di BZX84/C27 SOT-23 10

Y10 Valvo Z-Di BZX84/C27 SOT-23 10

Y11 Siemens Z-Di BZX84/C30 SOT-23 10 BZX79C30/350mW

Y11 Thomson Z-Di BZX84/C30 SOT-23 10

Y11 Valvo Z-Di BZX84/C30 SOT-23 10

Y12 NEC Si-P 2SA1464-Y12 SOT-23 10

Y12 NEC Si-P 2SA1608-Y12 SOT-323 2 10

Y12 Siemens Z-Di BZX84/C33 SOT-23 10 BZX79C33/350mW

Y12 Thomson Z-Di BZX84/C33 SOT-23 10

Y12 Valvo Z-Di BZX84/C33 SOT-23 10

Y13 NEC Si-P 2SA1464-Y13 SOT-23 10

Y13 NEC Si-P 2SA1608-Y13 SOT-323 2 10

Y13 Siemens Z-Di BZX84/C36 SOT-23 10 BZX79C36/350mW

Y13 Thomson Z-Di BZX84/C36 SOT-23 10

Y13 Valvo Z-Di BZX84/C36 SOT-23 10

Y14 NEC Si-P 2SA1464-Y14 SOT-23 10

Y14 NEC Si-P 2SA1608-Y14 SOT-323 2 10

Y14 Siemens Z-Di BZX84/C39 SOT-23 10 BZX79C39/350mW

Y14 Thomson Z-Di BZX84/C39 SOT-23 10

Y14 Valvo Z-Di BZX84/C39 SOT-23 10

Y15 NEC Si-P NTM2907A SOT-23 10

Y15 Siemens Z-Di BZX84/C43 SOT-23 10 BZX79C43/350mW

Y15 Thomson Z-Di BZX84/C43 SOT-23 10

Y15 Valvo Z-Di BZX84/C43 SOT-23 10

Y16 Siemens Z-Di BZX84/C47 SOT-23 10 BZX79C47/350mW

Y … Y16

http://www.serwis-elektroniki.com.pl/

Page 257:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 248 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

Y16 Thomson Z-Di BZX84/C47 SOT-23 10

Y16 Valvo Z-Di BZX84/C47 SOT-23 10

Y17 Siemens Z-Di BZX84/C51 SOT-23 10 BZX79C51/350mW

Y17 Thomson Z-Di BZX84/C51 SOT-23 10

Y17 Valvo Z-Di BZX84/C51 SOT-23 10

Y18 Siemens Z-Di BZX84/C56 SOT-23 10 BZX79C56/350mW

Y18 Thomson Z-Di BZX84/C56 SOT-23 10

Y18 Valvo Z-Di BZX84/C56 SOT-23 10

Y19 Siemens Z-Di BZX84/C62 SOT-23 10 BZX79C62/350mW

Y19 Thomson Z-Di BZX84/C62 SOT-23 10

Y19 Valvo Z-Di BZX84/C62 SOT-23 10

Y1s Siemens GaAs-FET-IC CGY195 (SCT-595) ~14

Y2 Ferranti Z-Di BZX88/C12 SOT-323 2 10

Y2 Siemens Z-Di BZV49/C12 SOT-89 11

Y2 Siemens Z-Di BZX84/C12 SOT-23 10 BZX79C12/350mW

Y2 Siemens GaAs-N-FET-d CLY2 (MW-6) ~15

Y2 Valvo Z-Di BZX84/C12 SOT-23 10

Y20 Siemens Z-Di BZX84/C68 SOT-23 10 BZX79C68/350mW

Y20 Thomson Z-Di BZX84/C68 SOT-23 10

Y20 Valvo Z-Di BZX84/C68 SOT-23 10

Y21 Siemens Z-Di BZX84/C75 SOT-23 10 BZX79C75/350mW

Y21 Thomson Z-Di BZX84/C75 SOT-23 10

Y21 Valvo Z-Di BZX84/C75 SOT-23 10

Y22 NEC Si-P 2SA1461-Y22 SOT-23 10

Y23 NEC Si-P 2SA1461-Y23 SOT-23 10

Y24 NEC Si-P 2SA1461-Y24 SOT-23 10

Y25 NEC Si-P NTM3906 SOT-23 10

Y3 Ferranti Z-Di BZX88/C13 SOT-323 2 10

Y3 Rohm Si-P/N FMY3A SOT-153 14

Y3 Rohm Si-P/N UMY3N SOT-353 2 14

Y3 Siemens Z-Di BZV49/C13 SOT-89 11

Y3 Siemens Z-Di BZX84/C13 SOT-23 10 BZX79C13/350mW

Y3 Valvo Z-Di BZX84/C13 SOT-23 10

Y33 NEC Si-P 2SA1462-Y33 SOT-23 10

Y33 NEC Si-P 2SA1610-Y33 SOT-323 2 10

Y16 … Y33

http://www.serwis-elektroniki.com.pl/

Page 258:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 249 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

Y34 NEC Si-P 2SA1462-Y34 SOT-23 10

Y34 NEC Si-P 2SA1610-Y34 SOT-323 2 10

Y4 Ferranti Z-Di BZX88/C15 SOT-323 2 10

Y4 Rohm Si-P/N FMY4A SOT-153 14

Y4 Rohm Si-P/N UMY4 SOT-353 2 14

Y4 Siemens Z-Di BZV49/C15 SOT-89 11

Y4 Siemens Z-Di BZX84/C15 SOT-23 10 BZX79C15/350mW

Y4 Valvo Z-Di BZX84/C15 SOT-23 10

Y5 Ferranti Z-Di BZX88/C16 SOT-323 2 10

Y5 Rohm Si-P/N FMY5 SOT-153 14

Y5 Siemens Z-Di BZV49/C16 SOT-89 11

Y5 Siemens Z-Di BZX84/C16 SOT-23 10 BZX79C16/350mW

Y5 Siemens GaAs-FET-IC CGY59 (MW-6) ~15

Y5 Valvo Z-Di BZX84/C16 SOT-23 10

Y50 Philips Z-Di BZX84-A2V4 SOT-23 10

Y51 Philips Z-Di BZX84-A2V7 SOT-23 10

Y52 Philips Z-Di BZX84-A3V0 SOT-23 10

Y53 Philips Z-Di BZX84-A3V3 SOT-23 10

Y54 Philips Z-Di BZX84-A3V6 SOT-23 10

Y55 Philips Z-Di BZX84-A3V9 SOT-23 10

Y56 Philips Z-Di BZX84-A4V3 SOT-23 10

Y57 Philips Z-Di BZX84-A4V7 SOT-23 10

Y58 Philips Z-Di BZX84-A5V1 SOT-23 10

Y59 Philips Z-Di BZX84-A5V6 SOT-23 10

Y6 Ferranti Z-Di BZX88/C18 SOT-323 2 10

Y6 Rohm Si-P/N FMY6 SOT-153 14

Y6 Siemens Z-Di BZV49/C18 SOT-89 11

Y6 Siemens Z-Di BZX84/C18 SOT-23 10 BZX79C18/350mW

Y6 Valvo Z-Di BZX84/C18 SOT-23 10

Y60 Philips Z-Di BZX84-A6V2 SOT-23 10

Y61 Philips Z-Di BZX84-A6V8 SOT-23 10

Y62 Philips Z-Di BZX84-A7V5 SOT-23 10

Y63 Philips Z-Di BZX84-A8V2 SOT-23 10

Y64 Philips Z-Di BZX84-A9V1 SOT-23 10

Y65 Philips Z-Di BZX84-A10 SOT-23 10

Y34 … Y65

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Page 259:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 250 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

Y66 Philips Z-Di BZX84-A11 SOT-23 10

Y67 Philips Z-Di BZX84-A12 SOT-23 10

Y68 Philips Z-Di BZX84-A13 SOT-23 10

Y69 Philips Z-Di BZX84-A15 SOT-23 10

Y6s Siemens GaAs-FET-IC CGY62 (MW-6) ~15

Y7 Ferranti Z-Di BZX88/C20 SOT-323 2 10

Y7 Siemens Z-Di BZV49/C20 SOT-89 11

Y7 Siemens Z-Di BZX84/C20 SOT-23 10 BZX79C20/350mW

Y7 Valvo Z-Di BZX84/C20 SOT-23 10

Y70 Philips Z-Di BZX84-A16 SOT-23 10

Y71 Philips Z-Di BZX84-A18 SOT-23 10

Y72 Philips Z-Di BZX84-A20 SOT-23 10

Y73 Philips Z-Di BZX84-A22 SOT-23 10

Y74 Philips Z-Di BZX84-A24 SOT-23 10

Y75 Philips Z-Di BZX84-A27 SOT-23 10

Y76 Philips Z-Di BZX84-A30 SOT-23 10

Y77 Philips Z-Di BZX84-A33 SOT-23 10

Y78 Philips Z-Di BZX84-A36 SOT-23 10

Y79 Philips Z-Di BZX84-A39 SOT-23 10

Y7s Siemens GaAs-FET-IC CGY60 (MW-6) ~15

Y8 Ferranti Z-Di BZX88/C22 SOT-323 2 10

Y8 Siemens Z-Di BZV49/C22 SOT-89 11

Y8 Siemens Z-Di BZX84/C22 SOT-23 10 BZX79C22/350mW

Y8 Siemens GaAs-FET-IC CGY120 (MW-6) ~15

Y8 Valvo Z-Di BZX84/C22 SOT-23 10

Y80 Philips Z-Di BZX84-A43 SOT-23 10

Y81 Philips Z-Di BZX84-A47 SOT-23 10

Y82 Philips Z-Di BZX84-A51 SOT-23 10

Y83 Philips Z-Di BZX84-A56 SOT-23 10

Y84 Philips Z-Di BZX84-A62 SOT-23 10

Y85 Philips Z-Di BZX84-A68 SOT-23 10

Y86 Philips Z-Di BZX84-A75 SOT-23 10

Y9 Ferranti Z-Di BZX88/C24 SOT-323 2 10

Y9 Siemens Z-Di BZV49/C24 SOT-89 11

Y9 Siemens Z-Di BZX84/C24 SOT-23 10 BZX79C24/350mW

Y66 … Y9

http://www.serwis-elektroniki.com.pl/

Page 260:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

Y9 Valvo Z-Di BZX84/C24 SOT-23 10

Y9s Siemens GaAs-FET-IC CGY121A (MW-6) ~15

YA AEG Si-P BCW61RA SOT-23 10

YA Toshiba Si-P+R RN2101 SS Mini 1,6 10

YA Toshiba Si-P+R RN2301 SOT-323 2 10

YA Toshiba Si-P+R RN2401 SOT-23 10

YA Toshiba Si-P+R RN2501 SOT-153 14

YA Toshiba Si-P+R RN2601 SOT-163 15

YA Toshiba Si-P+R RN2701 SOT-353 2 14

YA Toshiba Si-P+R RN2901 SOT-363 2 15

YA Toshiba Si-P+R RN6001 SOT-89 11

YA- Hitachi Si-N 2SC4784 SOT-323 2 10

YA- Hitachi Si-N 2SC4791 SOT-143 13

YA- Hitachi Si-N 2SC5049 SOT-23 10

YA- Hitachi Si-N 2SC5137 SS Mini 1,6 10

YAs Siemens MOS-N-FET-e BSS83P SOT-23 10

YB AEG Si-P BCW61RB SOT-23 10

YB NEC MOS-N-FET-e 2SK680A SOT-89 11

YB Toshiba Si-P+R RN2102 SS Mini 1,6 10

YB Toshiba Si-P+R RN2302 SOT-323 2 10

YB Toshiba Si-P+R RN2402 SOT-23 10

YB Toshiba Si-P+R RN2502 SOT-153 14

YB Toshiba Si-P+R RN2602 SOT-163 15

YB Toshiba Si-P+R RN2702 SOT-353 2 14

YB Toshiba Si-P+R RN2902 SOT-363 2 15

YB Toshiba Si-P+R RN6002 SOT-89 11

YBs Siemens MOS-P-FET-e BSS84P SOT-23 10

YC AEG Si-P BCW61RC SOT-23 10

YC Hitachi Si-N 2SC5078 SOT-143 13

YC Hitachi Si-N 2SC5079 SOT-343 2 13

YC Hitachi N-FET 2SK197-C SOT-23 10

YC Toshiba Si-P+R RN2103 SS Mini 1,6 10

YC Toshiba Si-P+R RN2303 SOT-323 2 10

YC Toshiba Si-P+R RN2403 SOT-23 10

YC Toshiba Si-P+R RN2503 SOT-153 14

Y9 … YC

http://www.serwis-elektroniki.com.pl/

Page 261:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 252 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

YC Toshiba Si-P+R RN2603 SOT-163 15

YC Toshiba Si-P+R RN2703 SOT-353 2 14

YC Toshiba Si-P+R RN2903 SOT-363 2 15

YC Toshiba Si-P+R RN6003 SOT-89 11

YD AEG Si-P BCW61RD SOT-23 10

YD Hitachi N-FET 2SK197-D SOT-23 10

YD Toshiba Si-P+R RN2104 SS Mini 1,6 10

YD Toshiba Si-P+R RN2304 SOT-323 2 10

YD Toshiba Si-P+R RN2404 SOT-23 10

YD Toshiba Si-P+R RN2504 SOT-153 14

YD Toshiba Si-P+R RN2604 SOT-163 15

YD Toshiba Si-P+R RN2704 SOT-353 2 14

YD Toshiba Si-P+R RN2904 SOT-363 2 15

YD- Hitachi Si-N 2SC4926 SOT-143 13

YD- Hitachi Si-N 2SC4995 SOT-343 2 13

YE Hitachi N-FET 2SK197-E SOT-23 10

YE Mitsubishi Si-N 2SC3728-E SOT-89 11

YE Toshiba Si-P+R RN2105 SS Mini 1,6 10

YE Toshiba Si-P+R RN2305 SOT-323 2 10

YE Toshiba Si-P+R RN2405 SOT-23 10

YE Toshiba Si-P+R RN2505 SOT-153 14

YE Toshiba Si-P+R RN2605 SOT-163 15

YE Toshiba Si-P+R RN2705 SOT-353 2 14

YE Toshiba Si-P+R RN2905 SOT-363 2 15

YF Mitsubishi Si-N 2SC3728-F SOT-89 11

YF Toshiba Si-P+R RN2106 SS Mini 1,6 10

YF Toshiba Si-P+R RN2306 SOT-323 2 10

YF Toshiba Si-P+R RN2406 SOT-23 10

YF Toshiba Si-P+R RN2506 SOT-153 14

YF Toshiba Si-P+R RN2606 SOT-163 15

YF Toshiba Si-P+R RN2706 SOT-353 2 14

YF Toshiba Si-P+R RN2906 SOT-363 2 15

YF Toshiba Si-P+R RN6006 SOT-89 11

YFB Hitachi Si-N 2SC4932-B SOT-323 2 10

YFC Hitachi Si-N 2SC4932-C SOT-323 2 10

YC … YFC

http://www.serwis-elektroniki.com.pl/

Page 262:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 253 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

YFD Hitachi Si-N 2SC4932-D SOT-323 2 10

YG AEG Si-P BCX71RG SOT-23 10

YG Mitsubishi Si-N 2SC3728-G SOT-89 11

YG Toshiba N-FET 2SK210-GR SOT-23 10

YH AEG Si-P BCX71RH SOT-23 10

YH Toshiba Si-P+R RN2107 SS Mini 1,6 10

YH Toshiba Si-P+R RN2307 SOT-323 2 10

YH Toshiba Si-P+R RN2407 SOT-23 10

YH Toshiba Si-P+R RN2507 SOT-153 14

YH Toshiba Si-P+R RN2607 SOT-163 15

YH Toshiba Si-P+R RN2707 SOT-353 2 14

YH Toshiba Si-P+R RN2907 SOT-363 2 15

YH- Hitachi Si-N 2SC4899 SOT-323 2 10

YH- Hitachi Si-N 2SC5140 SS Mini 1,6 10

YI Toshiba Si-P+R RN2108 SS Mini 1,6 10

YI Toshiba Si-P+R RN2308 SOT-323 2 10

YI Toshiba Si-P+R RN2408 SOT-23 10

YI Toshiba Si-P+R RN2508 SOT-153 14

YI Toshiba Si-P+R RN2608 SOT-163 15

YI Toshiba Si-P+R RN2708 SOT-353 2 14

YI Toshiba Si-P+R RN2908 SOT-363 2 15

YI- Hitachi Si-P 2SA1666 SOT-23 10

YJ AEG Si-P BCX71RJ SOT-23 10

YJ Sanyo N-FET 2SK2394 SOT-23 10

YJ Toshiba Si-P+R RN2109 SS Mini 1,6 10

YJ Toshiba Si-P+R RN2309 SOT-323 2 10

YJ Toshiba Si-P+R RN2409 SOT-23 10

YJ Toshiba Si-P+R RN2509 SOT-153 14

YJ Toshiba Si-P+R RN2609 SOT-163 15

YJ Toshiba Si-P+R RN2709 SOT-353 2 14

YJ Toshiba Si-P+R RN2909 SOT-363 2 15

YJ- Hitachi Si-N 2SC4900 SOT-143 13

YJ5 Sanyo N-FET 2SK2394-5 SOT-23 10

YJ6 Sanyo N-FET 2SK2394-6 SOT-23 10

YJ7 Sanyo N-FET 2SK2394-7 SOT-23 10

YFD … YJ7

http://www.serwis-elektroniki.com.pl/

Page 263:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 254 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

YK AEG Si-P BCX71RK SOT-23 10

YK NEC Si-P 2SB1115-YK SOT-89 11

YK Toshiba Si-P+R RN2110 SS Mini 1,6 10

YK Toshiba Si-P+R RN2310 SOT-323 2 10

YK Toshiba Si-P+R RN2410 SOT-23 10

YK Toshiba Si-P+R RN2510 SOT-153 14

YK Toshiba Si-P+R RN2610 SOT-163 15

YK Toshiba Si-P+R RN2710 SOT-353 2 14

YK Toshiba Si-P+R RN2910 SOT-363 2 15

YK- Hitachi Si-N 2SC4901 SOT-323 2 10

YK- Hitachi Si-N 2SC5218 SOT-23 10

YL NEC Si-P 2SB1115-YL SOT-89 11

YL Sanyo Si-P 2SA1607 SOT-23 10

YL Sanyo Si-P 2SA1685 SOT-323 2 10

YL Toshiba N-FET 2SK210-BL SOT-23 10

YL- Hitachi Si-N 2SC4902 SOT-23 10

YL- Hitachi Si-N 2SC4903 SOT-323 2 10

YL- Hitachi Si-N 2SC5138 SS Mini 1,6 10

YM NEC Si-P 2SB1115-YM SOT-89 11

YM Toshiba Si-P+R RN2111 SS Mini 1,6 10

YM Toshiba Si-P+R RN2311 SOT-323 2 10

YM Toshiba Si-P+R RN2411 SOT-23 10

YM Toshiba Si-P+R RN2511 SOT-153 14

YM Toshiba Si-P+R RN2611 SOT-163 15

YM Toshiba Si-P+R RN2711 SOT-353 2 14

YM Toshiba Si-P+R RN2911 SOT-363 2 15

YM- Hitachi Si-N 2SC4904 SOT-23 10

YM- Hitachi Si-N 2SC4905 SOT-323 2 10

YN- Hitachi Si-N 2SC4906 SOT-323 2 10

YN- Hitachi Si-N 2SC5141 SS Mini 1,6 10

YO Philips Z-Di BZX284-C2V4 SOD-110 1,25×2 19

YP NEC Si-P 2SB111A-YP SOT-89 11

YP Philips Z-Di BZX284-C2V7 SOD-110 1,25×2 19

YP Rohm Si-N 2SD1484K-P SOT-23 10

YP Rohm Si-N 2SD1949K-P SOT-323 2 10

YK … YP

http://www.serwis-elektroniki.com.pl/

Page 264:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 255 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Y

YQ Matsushita Si-N 2SD2216-Q SS Mini 1,6 10

YQ Matsushita Si-N 2SD601-Q SOT-23 10

YQ Matsushita Si-N 2SD874A-Q SOT-89 11

YQ NEC Si-P 2SB1115A-YQ SOT-89 11

YQ Philips Si-P 2PA1774Q SC-75 1,6 10

YQ Philips Si-N 2PD601Q SOT-23 10

YQ Philips Z-Di BZX284-C3V0 SOD-110 1,25×2 19

YQ Rohm Si-N 2SD1484K-Q SOT-23 10

YQ Rohm Si-N 2SD1949K-Q SOT-323 2 10

YQB Hitachi Si-P 2SA1867-B SOT-323 2 10

YQC Hitachi Si-P 2SA1867-C SOT-323 2 10

YQD Hitachi Si-P 2SA1867-D SOT-323 2 10

YR Matsushita Si-N 2SD2216-R SS Mini 1,6 10

YR Matsushita Si-N 2SD601-R SOT-23 10

YR Matsushita Si-N 2SD874A-R SOT-89 11

YR Philips Si-P 2PA1774R SC-75 1,6 10

YR Philips Si-N 2PD601R SOT-23 10

YR Philips Z-Di BZX284-C3V3 SOD-110 1,25×2 19

YR Rohm Si-N 2SD1484K-R SOT-23 10

YR Rohm Si-N 2SD1949K-R SOT-323 2 10

YR- Hitachi Si-N 2SC4991 SOT-143 13

YR- Hitachi Si-N 2SC4992 SOT-343 2 13

YS Matsushita Si-N 2SD2216-S SS Mini 1,6 10

YS Matsushita Si-N 2SD601-S SOT-23 10

YS Matsushita Si-N 2SD874A-S SOT-89 11

YS Philips Si-P 2PA1774S SC-75 1,6 10

YS Philips Si-N 2PD601S SOT-23 10

YS Philips Z-Di BZX284-C3V6 SOD-110 1,25×2 19

YS- Hitachi Si-N 2SC4993 SOT-143 13

YS- Hitachi Si-N 2SC4994 SOT-343 2 13

YT Philips Z-Di BZX284-C3V9 SOD-110 1,25×2 19

YT Sanyo Si-N 2SC4851 SOT-323 2 10

YT Sanyo Si-N 2SC4852 SOT-23 10

YU Philips Z-Di BZX284-C4V3 SOD-110 1,25×2 19

YV KEC Si-P MMBTA92 SOT-23 10

YQ … YV

http://www.serwis-elektroniki.com.pl/

Page 265:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 256 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

YV Philips Z-Di BZX284-C4V7 SOD-110 1,25×2 19

YV- Hitachi Si-N 2SC4964 SOT-23 10

YV- Hitachi Si-N 2SC4965 SOT-323 2 10

YW KEC Si-P MMBTA93 SOT-23 10

YW Philips Z-Di BZX284-C5V1 SOD-110 1,25×2 19

YW- Hitachi Si-N 2SC4966 SOT-23 10

YW- Hitachi Si-N 2SC4967 SOT-323 2 10

YX Philips Z-Di BZX284C5V6 SOD-110 1,25×2 19

YY Hitachi MOS-P-FET-e 2SJ517 SOT-89 11

YY Philips Z-Di BZX284-C6V2 SOD-110 1,25×2 19

YY Sanyo Si-N 2SC4104 SOT-23 10

YY Toshiba N-FET 2SK210-Y SOT-23 10

YY- Hitachi GaAs-N-FET-d 2SK2113 SOT-343 2 13

YYA Toshiba Si-P+R RN2961 SOT-363 2 15

YYB Toshiba Si-P+R RN2962 SOT-363 2 15

YYC Toshiba Si-P+R RN2963 SOT-363 2 15

YYD Toshiba Si-P+R RN2964 SOT-363 2 15

YYE Toshiba Si-P+R RN2965 SOT-363 2 15

YYF Toshiba Si-P+R RN2966 SOT-363 2 15

YYH Toshiba Si-P+R RN2967 SOT-363 2 15

YYI Toshiba Si-P+R RN2968 SOT-363 2 15

YYJ Toshiba Si-P+R RN2969 SOT-363 2 15

YYK Toshiba Si-P+R RN2970 SOT-363 2 15

YYM Toshiba Si-P+R RN2971 SOT-363 2 15

YZ Philips Z-Di BZX284-C6V8 SOD-110 1,25×2 19

YZ- Hitachi Si-N 2SC5050 SOT-23 10

YZ- Hitachi Si-N 2SC5051 SOT-323 2 10

YZ- Hitachi Si-N 2SC5139 SS Mini 1,6 10

Z

Z Hitachi Si-Di HRU0302A SOD-323 1,7 19

Z Matsushita Si-N 2SD1819A SOT-323 2 10

Z Matsushita Si-N 2SD601A SOT-23 10

Z Matsushita Si-N 2SD874 SOT-89 11

Z0 Philips Z-Di BZA420A SOT-457 15

YV … Z0

http://www.serwis-elektroniki.com.pl/

Page 266:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 257 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

Z0 Siliconix P-FET SST310 SOT-23 10

Z0D Thomson Triac Z0110DN SOT-223 16

Z0M Thomson Triac Z0110MN SOT-223 16

Z0N Thomson Triac Z0110NN SOT-223 16

Z0S Thomson Triac Z0110SN SOT-223 16

Z1 Ferranti Z-Di BZX88/C4V7 SOT-323 2 10

Z1 Rohm Si-N/P IMZ1A SOT-163 15

Z1 Rohm Si-N/P UMZ1N SOT-363 2 15

Z1 Siemens Z-Di BZV49/C4V7 SOT-89 11

Z1 Siemens Z-Di BZX84/C4V7 SOT-23 10 BZX79C4V7/350mW

Z1 Valvo Z-Di BZX84/C4V7 SOT-23 10

Z11 Siemens Z-Di BZX84C2V4 SOT-23 10 BZX79C2V4/350mW

Z11 Valvo Z-Di BZX84/C2V4 SOT-23 10

Z12 Siemens Z-Di BZX84C2V7 SOT-23 10 BZX79-C2V7/350mW

Z12 Valvo Z-Di BZX84/C2V7 SOT-23 10

Z13 Siemens Z-Di BZX84C3V0 SOT-23 10 BZX79-C3V0/350mW

Z13 Valvo Z-Di BZX84/C3V0 SOT-23 10

Z14 Siemens Z-Di BZX84C3V3 SOT-23 10 BZX79-C3V3/350mW

Z14 Valvo Z-Di BZX84/C3V3 SOT-23 10

Z15 Siemens Z-Di BZX84C3V6 SOT-23 10 BZX79-C3V6/350mW

Z15 Valvo Z-Di BZX84/C3V6 SOT-23 10

Z16 Siemens Z-Di BZX84C3V9 SOT-23 10 BZX79-C3V9/350mW

Z16 Valvo Z-Di BZX84/C3V9 SOT-23 10

Z17 Siemens Z-Di BZX84C4V3 SOT-23 10 BZX79-C4V3/350mW

Z17 Valvo Z-Di BZX84/C4V3 SOT-23 10

Z2 Ferranti Z-Di BZX88/C5V1 SOT-323 2 10

Z2 Rohm Si-P/N IMZ2A SOT-163 15

Z2 Rohm Si-P/N UMZ2 SOT-363 2 15

Z2 Siemens Z-Di BZV49/C5V1 SOT-89 11

Z2 Siemens Z-Di BZX84/C5V1 SOT-23 10 BZX79C5V1/350mW

Z2 Valvo Z-Di BZX84/C5V1 SOT-23 10

Z22N Shindengen Si-Br S1ZB20 DIP-4 21

Z2t Philips Z-Di BZA462A SOT-457 15

Z2U Zetex Si-P-Darl FMMTA63 SOT-23 10

Z2V Zetex Si-P-Darl FMMTA64 SOT-23 10

Z0 … Z2V

http://www.serwis-elektroniki.com.pl/

Page 267:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 258 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

Z3 Ferranti Z-Di BZX88/C5V6 SOT-323 2 10

Z3 Rohm Si-N/P IMZ3A SOT-163 15

Z3 Siemens Z-Di BZV49/C5V6 SOT-89 11

Z3 Siemens Z-Di BZX84/C5V6 SOT-23 10 BZX79C5V6/350mW

Z3 Toshiba MOS-N-FET-e 2SK1078 SOT-89 11

Z3 Valvo Z-Di BZX84/C5V6 SOT-23 10

Z3D Thomson Triac Z0103DN SOT-223 16

Z3M Thomson Triac Z0103MN SOT-223 16

Z3N Thomson Triac Z0103NN SOT-223 16

Z3S Thomson Triac Z0103SN SOT-223 16

Z4 Ferranti Z-Di BZX88/C6V2 SOT-323 2 10

Z4 Rohm Si-N/P IMZ4 SOT-163 15

Z4 Siemens Z-Di BZV49/C6V2 SOT-89 11

Z4 Siemens Z-Di BZX84/C6V2 SOT-23 10 BZX79C6V2/350mW

Z4 Toshiba MOS-N-FET-e 2SK1079 SOT-89 11

Z4 Valvo Z-Di BZX84/C6V2 SOT-23 10

Z5 Ferranti Z-Di BZX88/C6V8 SOT-323 2 10

Z5 Matsushita MOS-N-FET-e* 2SK1717 SOT-89 11

Z5 Siemens Z-Di BZV49/C6V8 SOT-89 11

Z5 Siemens Z-Di BZX84/C6V8 SOT-23 10 BZX79C6V8/350mW

Z5 Valvo Z-Di BZX84/C6V8 SOT-23 10

Z50 Philips Z-Di BZX84-B2V4 SOT-23 10

Z51 Philips Z-Di BZX84-B2V7 SOT-23 10

Z52 Philips Z-Di BZX84-B3V0 SOT-23 10

Z53 Philips Z-Di BZX84-B3V3 SOT-23 10

Z54 Philips Z-Di BZX84-B3V6 SOT-23 10

Z54 Thomson Si-Di STPS0540Z SOD-123 2,7 19

Z55 Philips Z-Di BZX84-B3V9 SOT-23 10

Z56 Philips Z-Di BZX84-B4V3 SOT-23 10

Z56 Thomson Si-Di STPS0560Z SOD-123 2,7 19

Z57 Philips Z-Di BZX84-B4V7 SOT-23 10

Z58 Philips Z-Di BZX84-B5V1 SOT-23 10

Z59 Philips Z-Di BZX84-B5V6 SOT-23 10

Z6 Ferranti Z-Di BZX88/C7V5 SOT-323 2 10

Z6 Matsushita MOS-P-FET-e 2SJ238 SOT-89 11

Z3 … Z6

http://www.serwis-elektroniki.com.pl/

Page 268:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 259 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

Z6 Philips Z-Di BZA456A SOT-457 15

Z6 Siemens Z-Di BZV49/C7V5 SOT-89 11

Z6 Siemens Z-Di BZX84/C7V5 SOT-23 10 BZX79C7V5/350mW

Z6 Valvo Z-Di BZX84/C7V5 SOT-23 10

Z60 Philips Z-Di BZX84-B6V2 SOT-23 10

Z61 Philips Z-Di BZX84-B6V8 SOT-23 10

Z62 Philips Z-Di BZX84-B7V5 SOT-23 10

Z62N Shindengen Si-Br S1ZB60 DIP-4 21

Z63 Philips Z-Di BZX84-B8V2 SOT-23 10

Z64 Philips Z-Di BZX84-B9V1 SOT-23 10

Z65 Philips Z-Di BZX84-B10 SOT-23 10

Z66 Philips Z-Di BZX84-B11 SOT-23 10

Z67 Philips Z-Di BZX84-B12 SOT-23 10

Z68 Philips Z-Di BZX84-B13 SOT-23 10

Z69 Philips Z-Di BZX84-B15 SOT-23 10

Z7 Ferranti Z-Di BZX88/C8V2 SOT-323 2 10

Z7 Siemens Z-Di BZV49/C8V2 SOT-89 11

Z7 Siemens Z-Di BZX84/C8V2 SOT-23 10 BZX79C8V2/350mW

Z7 Toshiba MOS-N-FET-e* 2SK2549 SOT-89 11

Z7 Valvo Z-Di BZX84/C8V2 SOT-23 10

Z70 Philips Z-Di BZX84-B16 SOT-23 10

Z71 Philips Z-Di BZX84-B18 SOT-23 10

Z72 Philips Z-Di BZX84-B20 SOT-23 10

Z73 Philips Z-Di BZX84-B22 SOT-23 10

Z74 Philips Z-Di BZX84-B24 SOT-23 10

Z75 Philips Z-Di BZX84-B27 SOT-23 10

Z76 Philips Z-Di BZX84-B30 SOT-23 10

Z77 Philips Z-Di BZX84-B33 SOT-23 10

Z78 Philips Z-Di BZX84-B36 SOT-23 10

Z79 Philips Z-Di BZX84-B39 SOT-23 10

Z7D Thomson Triac Z0107DN SOT-223 16

Z7M Thomson Triac Z0107MN SOT-223 16

Z7N Thomson Triac Z0107NN SOT-223 16

Z7S Thomson Triac Z0107SN SOT-223 16

Z8 Ferranti Z-Di BZX88/C9V1 SOT-323 2 10

Z6 … Z8

http://www.serwis-elektroniki.com.pl/

Page 269:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 260 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

Z8 Siemens Z-Di BZV49/C9V1 SOT-89 11

Z8 Siemens Z-Di BZX84/C9V1 SOT-23 10 BZX79C9V1/350mW

Z8 Siliconix P-FET SST308 SOT-23 10

Z8 Toshiba P-FET 2SJ360 SOT-89 11

Z8 Valvo Z-Di BZX84/C9V1 SOT-23 10

Z80 Philips Z-Di BZX84-B43 SOT-23 10

Z81 Philips Z-Di BZX84-B47 SOT-23 10

Z82 Philips Z-Di BZX84-B51 SOT-23 10

Z83 Philips Z-Di BZX84-B56 SOT-23 10

Z84 Philips Z-Di BZX84-B62 SOT-23 10

Z85 Philips Z-Di BZX84-B68 SOT-23 10

Z86 Philips Z-Di BZX84-B75 SOT-23 10

Z9 Ferranti Z-Di BZX88/C10 SOT-323 2 10

Z9 Siemens Z-Di BZV49/C10 SOT-89 11

Z9 Siemens Z-Di BZX84/C10 SOT-23 10 BZX79C10/350mW

Z9 Siliconix P-FET SST309 SOT-23 10

Z9 Toshiba MOS-P-FET-e 2SJ465 SOT-89 11

Z9 Valvo Z-Di BZX84/C10 SOT-23 10

Z9D Thomson Triac Z0109DN SOT-223 16

Z9M Thomson Triac Z0109MN SOT-223 16

Z9N Thomson Triac Z0109NN SOT-223 16

Z9S Thomson Triac Z0109SN SOT-223 16

ZA AEG Si-N BCW60RA SOT-23 10

ZA KEC Si-P 2N3906S SOT-23 10

ZA Philips Z-Di BZX284-C7V5 SOD-110 1,25×2 19

ZA Toshiba MOS-N-FET-e* 2SK2615 SOT-89 11

ZAA KEC Si-P KN3906S SOT-23 10

ZB AEG Si-N BCW60RB SOT-23 10

ZB KEC Si-N KTN2222S SOT-23 10

ZB Philips Z-Di BZX284-C8V2 SOD-110 1,25×2 19

ZB Toshiba MOS-N-FET-e* 2SK2963 SOT-89 11

ZBA KEC Si-N KN2222S SOT-23 10

ZC AEG Si-N BCW60RC SOT-23 10

ZC Ferranti Si-N FMMT4124 SOT-23 10

ZC Hitachi N-FET 2SK217-C SOT-23 10

Z8 … ZC

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Manufact.

Producent

Device

Opis

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Obudowa

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Fig.

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Odpowiednik

Z

ZC KEC Si-N 2N3904S SOT-23 10

ZC Motorola Si-N MMBT4124 SOT-23 10

ZC National Si-N MMBT4124 SOT-23 10

ZC Philips Z-Di BZX284-C9V1 SOD-110 1,25×2 19

ZC Samsung Si-N KST4124 SOT-23 10

ZC Samsung Si-N MMBT4124 SOT-23 10

ZC Siemens Si-N SMBT4124 SOT-23 10 BC846

ZC Toshiba MOS-N-FET-e* 2SK2964 SOT-89 11

ZC Toshiba Si-N YTS4124 SOT-23 10

ZC- Hitachi Si-N 2SC5078 SOT-143 13

ZC- Hitachi Si-N 2SC5079 SOT-343 2 13

ZC- Hitachi Si-N 2SC5246 SS Mini 1,6 10

ZCA KEC Si-N KN3904S SOT-23 10

ZD AEG Si-N BCW60RD SOT-23 10

ZD Ferranti Si-P FMMT4125 SOT-23 10

ZD Hitachi N-FET 2SK217-D SOT-23 10

ZD KEC Si-P KTN2907S SOT-23 10

ZD KEC Si-P KTN2907U SOT-323 2 10

ZD Motorola Si-P MMBT4125 SOT-23 10

ZD Philips Z-Di BZX284-C10 SOD-110 1,25×2 19

ZD Samsung Si-P KST4125 SOT-23 10

ZD Samsung Si-P MMBT4125 SOT-23 10

ZD Toshiba MOS-N-FET-e* 2SK2992 SOT-89 11

ZD Toshiba Si-P YTS4125 SOT-23 10

ZD- Hitachi Si-N 2SC5080 SOT-143 13

ZD- Hitachi Si-N 2SC5081 SOT-343 2 13

ZD- Hitachi Si-N 2SC5247 SS Mini 1,6 10

ZDA KEC Si-P KN2907S SOT-23 10

ZDD Thomson Z-Di SM5Z3V3A SOD-15 8×5 19 Z-Diode-5W

ZDE Thomson Z-Di SM5Z3V6A SOD-15 8×5 19 Z-Diode-5W

ZDF Thomson Z-Di SM5Z3V9A SOD-15 8×5 19 Z-Diode-5W

ZDG Thomson Z-Di SM5Z4V3A SOD-15 8×5 19 Z-Diode-5W

ZDH Thomson Z-Di SM5Z4V7A SOD-15 8×5 19 Z-Diode-5W

ZDK Thomson Z-Di SM5Z5V1A SOD-15 8×5 19 Z-Diode-5W

ZDL Thomson Z-Di SM5Z5V6A SOD-15 8×5 19 Z-Diode-5W

ZC … ZDL

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

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Odpowiednik

Z

ZDM Thomson Z-Di SM5Z6V0A SOD-15 8×5 19 Z-Diode-5W

ZDN Thomson Z-Di SM5Z6V2A SOD-15 8×5 19 Z-Diode-5W

ZDP Thomson Z-Di SM5Z6V8A SOD-15 8×5 19 Z-Diode-5W

ZDQ Thomson Z-Di SM5Z7V5A SOD-15 8×5 19 Z-Diode-5W

ZDR Thomson Z-Di SM5Z8V2A SOD-15 8×5 19 Z-Diode-5W

ZDS Thomson Z-Di SM5Z8V7A SOD-15 8×5 19 Z-Diode-5W

ZDT Thomson Z-Di SM5Z9V1A SOD-15 8×5 19 Z-Diode-5W

ZDU Thomson Z-Di SM5Z10A SOD-15 8×5 19 Z-Diode-5W

ZDV Thomson Z-Di SM5Z11A SOD-15 8×5 19 Z-Diode-5W

ZDW Thomson Z-Di SM5Z12A SOD-15 8×5 19 Z-Diode-5W

ZDX Thomson Z-Di SM5Z13A SOD-15 8×5 19 Z-Diode-5W

ZDY Thomson Z-Di SM5Z14A SOD-15 8×5 19 Z-Diode-5W

ZDZ Thomson Z-Di SM5Z15A SOD-15 8×5 19 Z-Diode-5W

ZE Hitachi N-FET 2SK217-E SOT-23 10

ZE Philips Z-Di BZX284-C11 SOD-110 1,25×2 19

ZE Toshiba MOS-P-FET-e* 2SJ508 SOT-89 11

ZE- Hitachi MOS-N-FET-e 2SK2373 SOT-23 10

ZED Thomson Z-Di SM5Z16A SOD-15 8×5 19 Z-Diode-5W

ZEE Thomson Z-Di SM5Z17A SOD-15 8×5 19 Z-Diode-5W

ZEF Thomson Z-Di SM5Z18A SOD-15 8×5 19 Z-Diode-5W

ZEG Thomson Z-Di SM5Z19A SOD-15 8×5 19 Z-Diode-5W

ZEH Thomson Z-Di SM5Z20A SOD-15 8×5 19 Z-Diode-5W

ZEK Thomson Z-Di SM5Z22A SOD-15 8×5 19 Z-Diode-5W

ZEL Thomson Z-Di SM5Z24A SOD-15 8×5 19 Z-Diode-5W

ZEM Thomson Z-Di SM5Z25A SOD-15 8×5 19 Z-Diode-5W

ZEN Thomson Z-Di SM5Z27A SOD-15 8×5 19 Z-Diode-5W

ZEP Thomson Z-Di SM5Z28A SOD-15 8×5 19 Z-Diode-5W

ZEQ Thomson Z-Di SM5Z30A SOD-15 8×5 19 Z-Diode-5W

ZER Thomson Z-Di SM5Z33A SOD-15 8×5 19 Z-Diode-5W

ZES Thomson Z-Di SM5Z36A SOD-15 8×5 19 Z-Diode-5W

ZET Thomson Z-Di SM5Z39A SOD-15 8×5 19 Z-Diode-5W

ZEU Thomson Z-Di SM5Z43A SOD-15 8×5 19 Z-Diode-5W

ZEV Thomson Z-Di SM5Z47A SOD-15 8×5 19 Z-Diode-5W

ZEW Thomson Z-Di SM5Z51A SOD-15 8×5 19 Z-Diode-5W

ZEX Thomson Z-Di SM5Z56A SOD-15 8×5 19 Z-Diode-5W

ZDM … ZEX

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

ZEY Thomson Z-Di SM5Z60A SOD-15 8×5 19 Z-Diode-5W

ZF National Si-P MMBT4126 SOT-23 10

ZF Philips Z-Di BZX284-C12 SOD-110 1,25×2 19

ZF Toshiba MOS-P-FET-e* 2SJ511 SOT-89 11

ZF- Hitachi MOS-P-FET-e 2SJ399 SOT-23 10

ZFD Thomson Z-Di SM5Z62A SOD-15 8×5 19 Z-Diode-5W

ZFD Zetex Si-P-Darl BCV26 SOT-23 10

ZFE Zetex Si-P-Darl BCV46 SOT-23 10 Z-Diode-5W

ZFF Zetex Si-N-Darl BCV27 SOT-23 10 Z-Diode-5W

ZFG Thomson Z-Di SM5Z82A SOD-15 8×5 19 Z-Diode-5W

ZFG Zetex Si-N-Darl BCV47 SOT-23 10 Z-Diode-5W

ZFH Thomson Z-Di SM5Z87A SOD-15 8×5 19 Z-Diode-5W

ZFK Thomson Z-Di SM5Z91A SOD-15 8×5 19 Z-Diode-5W

ZFL Thomson Z-Di SM5Z100A SOD-15 8×5 19 Z-Diode-5W

ZFM Thomson Z-Di SM5Z110A SOD-15 8×5 19 Z-Diode-5W

ZFN Thomson Z-Di SM5Z120A SOD-15 19 Z-Diode-5W

ZFP Thomson Z-Di SM5Z130A SOD-15 19 Z-Diode-5W

ZFQ Thomson Z-Di SM5Z140A SOD-15 19 Z-Diode-5W

ZFR Thomson Z-Di SM5Z150A SOD-15 8×5 19 Z-Diode-5W

ZFS Thomson Z-Di SM5Z160A SOD-15 8×5 19 Z-Diode-5W

ZFT Thomson Z-Di SM5Z170A SOD-15 19 Z-Diode-5W

ZFU Thomson Z-Di SM5Z180A SOD-15 8×5 19 Z-Diode-5W

ZFV Thomson Z-Di SM5Z190A SOD-15 19 Z-Diode-5W

ZFW Thomson Z-Di SM5Z200A SOD-15 8×5 19 Z-Diode-5W

ZG AEG Si-N BCX70RG SOT-23 10

ZG KEC Si-N KTN2222AS SOT-23 10

ZG Philips Z-Di BZX284-C13 SOD-110 1,25×2 19

ZG- Hitachi MOS-N-FET-d 3SK276 SOT-143 13

ZGA KEC Si-N KN2222AS SOT-23 10

ZH AEG Si-N BCX70RH SOT-23 10

ZH KEC Si-P KTN2907AS SOT-23 10

ZH KEC Si-P KTN2907AU SOT-323 2 10

ZH Philips Z-Di BZX284-C15 SOD-110 1,25×2 19

ZH- Hitachi MOS-N-FET-d 2SK288 SOT-143 13

ZHA KEC Si-P KN2907AS SOT-23 10

ZEY … ZHA

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Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

ZI KEC Si-N KTN2369U SOT-323 2 10

ZI Philips Z-Di BZX284-C16 SOD-110 1,25×2 19

ZI- Hitachi Si-N 2SC4366 SOT-23 10

ziel. AEG PIN-Di BA679 MiniMELF 3,4×1,6 20

ziel. Philips C-Di BB240 SOD-80

ziel. Siemens PIN-Di BA585 SOD-123

ziel. LED LGS250-DO SOT-23

ziel. LED LGS259-BO SOT-23

ziel./ ¿ó³ty GIE BYM12-400 MELF 5×2,5 20

ziel./br¹z. AEG Si-Di BAV101 MiniMELF 3,4×1,6 20 BAV19

ziel./br¹z. GIE BYM12-300 MELF 5×2,5 20

ziel./br¹z. Philips Si-Di BAV101 MiniMELF 3,4×1,6 20 BAV19

ziel./czarny AEG Si-Di BAV100 MiniMELF 3,4×1,6 20 BAV200

ziel./czarny Philips Si-Di BAV100 MiniMELF 3,4×1,6 20 BAV200

ziel./czerw. AEG Si-Di BAV102 MiniMELF 3,4×1,6 20 BAV20

ziel./czerw. GIE BYM12-100 MELF 5×2,5 20

ziel./czerw. Philips Si-Di BAV102 MiniMELF 3,4×1,6 20 BAV20

ziel./fiolet. GIE BYM12-150 MELF 5×2,5 20

ziel./pom. AEG Si-Di BAV103 MiniMELF 3,4×1,6 20 BAV21

ziel./pom. GIE BYM12-200 MELF 5×2,5 20

ziel./pom. Philips Si-Di BAV103 MiniMELF 3,4×1,6 20 BAV21

ziel./szary GIE BYM12-50 MELF 5×2,5 20

ZJ AEG Si-N BCX70RJ SOT-23 10

ZJ Philips Z-Di BZX284-C18 SOD-110 1,25×2 19

ZJ- Hitachi MOS-N-FET-d 3SK290 SOT-343 2 13

ZK AEG Si-N BZX70RK SOT-23 10

ZK KEC Si-N KTN2369AS SOT-23 10

ZK KEC Si-N KTN2369AU SOT-323 2 10

ZK NEC Si-P 2SB1114-ZK SOT-89 11

ZK Philips Z-Di BZX284-C20 SOD-110 1,25×2 19

ZK- Hitachi MOS-P-FET-e 2SJ451 SOT-23 10

ZL NEC Si-P 2SB1114-ZL SOT-89 11

ZL Philips Z-Di BZX284-C22 SOD-110 1,25×2 19

ZL Sanyo Si-P 2SA1653 SOT-23 10

ZL Toshiba HN3G01J SOT-153 14

ZI … ZL

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Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

ZL- Hitachi MOS-N-FET-e 2SK2570 SOT-23 10

ZM NEC Si-P 2SB1114-ZM SOT-89 11

ZM Philips Z-Di BZX284-C24 SOD-110 1,25×2 19

ZM- Hitachi MOS-P-FET-e 2SJ452 SOT-23 10

ZN Philips Z-Di BZX284-C27 SOD-110 1,25×2 19

ZN- Hitachi MOS-N-FET-e 2SJ2569 SOT-23 10

ZO KEC Si-P KTA2015-O SOT-323 2 10

ZO Philips Z-Di BZX284-C30 SOD-110 1,25×2 19

ZO Toshiba Si-P 2SA1182-O SOT-23 10

ZO Toshiba Si-P 2SA1588-O SOT-323 2 10

ZOP Rohm Z-Di STZ6.8T SOT-23 10

ZP NEC Si-P 2SB1301-ZP SOT-89 11

ZP Philips Z-Di BZX284-C33 SOD-110 1,25×2 19

ZP- Hitachi MOS-N-FET 3SK297 SOT-143 13

ZP- Hitachi MOS-N-FET 3SK298 SOT-343 2 13

ZQ Hitachi Si-N 2SD2496-Q (T Mini) ~10

ZQ Matsushita Si-N 2SD1819A-Q SOT-323 2 10

ZQ Matsushita Si-N 2SD601A-Q SOT-23 10

ZQ Matsushita Si-N 2SD874Q SOT-89 11

ZQ NEC Si-P 2SB1301-ZQ SOT-89 11

ZQ Philips Si-Br 2PC4081Q SOT-323 2 10

ZQ Philips Si-Br 2PC4617Q SC-75 1,6 10

ZQ Philips Si-Br 2PD601AQ SOT-23 10

ZQ Philips Z-Di BZX284-C36 SOD-110 1,25×2 19

ZQ- Hitachi MOS-N-FET 3SK295 SOT-143 13

ZQ- Hitachi MOS-N-FET 3SK296 SOT-343 2 13

ZR Hitachi Si-N 2SD2496-R (T Mini) ~10

ZR Matsushita Si-N 2SD1819A-R SOT-323 2 10

ZR Matsushita Si-N 2SD601A-R SOT-23 10

ZR Matsushita Si-N 2SD874-R SOT-89 11

ZR NEC Si-P 2SB1301-ZR SOT-89 11

ZR Philips Si-N 2PC4081R SOT-323 2 10

ZR Philips Si-N 2PC4617R SC-75 1,6 10

ZR Philips Si-N 2PD601AR SOT-23 10

ZR Philips Z-Di BZX284-C39 SOD-110 1,25×2 19

ZL … ZR

http://www.serwis-elektroniki.com.pl/

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Kod

Manufact.

Producent

Device

Opis

Type

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Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

Z

ZR- Hitachi MOS-N-FET 3SK300 SOT-143 13

ZRA KEC Si-N KN3903S SOT-23 10

ZS Hitachi Si-N 2SD2496-S (T Mini) ~10

ZS Matsushita Si-N 2SD1819A-S SOT-323 2 10

ZS Matsushita Si-N 2SD601A-S SOT-23 10

ZS Matsushita Si-N 2SD874-S SOT-89 11

ZS Philips Si-N 2PC4081S SC-70 2 10

ZS Philips Si-N 2PC4617S SC-75 1,6 10

ZS Philips Si-N 2PD601AS SOT-23 10

ZS Philips Z-Di BZX284-C43 SOD-110 1,25×2 19

ZSA KEC Si-P KN3905S SOT-23 10

ZT Philips Z-Di BZX284-C47 SOD-110 1,25×2 19

ZT- Hitachi GaAs-N-FET-d 2SK2685 SOT-343 2 13

ZT2222 Siemens Si-N PZT2222 SOT-223 16

ZT2222A Siemens Si-N PZT2222A SOT-223 16

ZT2907 Siemens Si-P PZT2907 SOT-223 16

ZT2907A Siemens Si-P PZT2907A SOT-223 16

ZT3904 Siemens Si-N PZT3904 SOT-223 16

ZT3906 Siemens Si-P PZT3906 SOT-223 16

ZTA KEC Si-N KN4400S SOT-23 10

ZTA96 Motorola Si-P PZTA96 SOT-223 16

ZtQ Philips Si-N 2PC4081Q SC-70 2 10

ZtR Philips Si-N 2PC4081R SC-70 2 10

ZtS Philips Si-N 2PC4081S SC-70 2 10

ZtZ Philips Si-N PUMX1 SOT-363 15

ZU Philips Z-Di BZX284-C51 SOD-110 1,25×2 19

ZU- Hitachi MOS-P-FET-e 2SJ486 SOT-23 10

ZUA KEC Si-N KN4401S SOT-23 10

ZV Philips Z-Di BZX284-C56 SOD-110 1,25×2 19

ZV- Hitachi MOS-N-FET-e 2SK2802 SOT-23 10

ZVA KEC Si-P KN4402S SOT-23 10

ZVU Thomson Z-Di SM5Z10A SOD-15 19 Z-Diode-5W

ZW Philips Z-Di BZX284-C62 SOD-110 1,25×2 19

ZWA KEC Si-P KN4403S SOT-23 10

ZX NEC Si-P 2SB1628-ZX SOT-89 11

ZR … ZX

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Manufact.

Producent

Device

Opis

Type

Typ

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Obudowa

Dim.

Wymiary

Fig.

Rys.

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Odpowiednik

0

ZX Philips Z-Di BZX284-C68 SOD-110 1,25×2 19

ZXM4N02 Zetex MOS-N-FET-e ZXM64N02X SSMDIP-8 23

ZXM4N03 Zetex MOS-N-FET-e ZXM64N03X SSMDIP-8 23

ZXM4P02 Zetex MOS-P-FET-e ZXM64P02X SSMDIP-8 23

ZXM4P03 Zetex MOS-P-FET-e ZXM64P03X SSMDIP-8 23

ZXM63C02 Zetex MOS-N/P-FET-e ZXMD63C02X SSMDIP-8 23

ZXM63C03 Zetex MOS-N/P-FET-e ZXMD63C03X SSMDIP-8 23

ZXM63N02 Zetex MOS-N-FET-e ZXMD63N02X SSMDIP-8 23

ZXM63N03 Zetex MOS-N-FET-e ZXMD63N03X SSMDIP-8 23

ZXM63P02 Zetex MOS-P-FET-e ZXMD63P02X SSMDIP-8 23

ZXM63P03 Zetex MOS-P-FET-e ZXMD63P03X SSMDIP-8 23

ZY Hitachi MOS-N-FET-e 2SK2978 SOT-89 11

ZY KEC Si-P KTA2015-Y SOT-323 2 10

ZY NEC Si-P 2SB1628-ZY SOT-89 11

ZY Philips Z-Di BZX284-C75 SOD-110 1,25×2 19

ZY Sanyo Si-N 2SC4047 SOT-23 10

ZY Toshiba Si-P 2SA1182-Y SOT-23 10

ZY Toshiba Si-P 2SA1588-Y SOT-323 2 10

ZY- Hitachi MOS-N-FET-e 2SK3000 SOT-23 10

ZZ NEC Si-P 2SB1628-ZZ SOT-89 11

ZZ- Hitachi MOS-N-FET-e 2SK2980 SOT-23 10

¿ó³ty Philips C-Di BB619 SOD-123 2,7 19 BB515G

¿ó³ty Siemens C-Di BB619 SOD-123 2,7 19 BB515G

¿ó³ty LED LYS250-DO SOT-23

¿ó³ty LED LYS259-BO SOT-23

0

0 Hitachi C-Di HVC300A SOD-523 1,3 19

0 Hitachi C-Di HVE300A SOD-523 1,3 19

0 Hitachi C-Di HVU300 (A) SOD-323 1,7 19

01 Philips Si-P+R PDTA143EE SC-75 1,6 10

01 Philips Si-P+R PDTA143EK SC-59 10

010 Thomson Si-N SO918R SOT-23 10

01t Philips Si-P+R PDTA143EU SC-70 2 10

02 Motorola Si-N BSX39 SOT-23 10

ZX … 02

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Kod

Manufact.

Producent

Device

Opis

Type

Typ

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Dim.

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Fig.

Rys.

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Odpowiednik

0

02 Philips MOS-N-FET-e BST82 SOT-23 10

02 Philips Si-N+R PDTC143EE SC-75 1,6 10

02 Philips Si-N+R PDTC143EK SC-59 10

02 Valvo MOS-N-FET-e BST82 SOT-23 10

028 Thomson Si-N SO3572R SOT-23 10

02p Philips MOS-N-FET-e BST82 SOT-23 10

03 Philips Si-P+R PDTA114EE SC-75 1,6 10

03 Philips Si-P+R PDTA114EK SC-59 10

03C100PH Philips Z-Di BZG03-C100 SOD-106 5×2,5 19

03C10PH Philips Z-Di BZG03-C10 SOD-106 5×2,5 19

03C110PH Philips Z-Di BZG03-C110 SOD-106 5×2,5 19

03C11PH Philips Z-Di BZG03-C11 SOD-106 5×2,5 19

03C120PH Philips Z-Di BZG03-C120 SOD-106 5×2,5 19

03C12PH Philips Z-Di BZG03-C12 SOD-106 5×2,5 19

03C130PH Philips Z-Di BZG03-C130 SOD-106 5×2,5 19

03C13PH Philips Z-Di BZG03-C13 SOD-106 5×2,5 19

03C150PH Philips Z-Di BZG03-C150 SOD-106 5×2,5 19

03C15PH Philips Z-Di BZG03-C15 SOD-106 5×2,5 19

03C160PH Philips Z-Di BZG03-C160 SOD-106 5×2,5 19

03C16PH Philips Z-Di BZG03-C16 SOD-106 5×2,5 19

03C180PH Philips Z-Di BZG03-C180 SOD-106 5×2,5 19

03C18PH Philips Z-Di BZG03-C18 SOD-106 5×2,5 19

03C200PH Philips Z-Di BZG03-C200 SOD-106 5×2,5 19

03C20PH Philips Z-Di BZG03-C20 SOD-106 5×2,5 19

03C220PH Philips Z-Di BZG03-C220 SOD-106 5×2,5 19

03C22PH Philips Z-Di BZG03-C22 SOD-106 5×2,5 19

03C240PH Philips Z-Di BZG03-C240 SOD-106 5×2,5 19

03C24PH Philips Z-Di BZG03-C24 SOD-106 5×2,5 19

03C270PH Philips Z-Di BZG03-C270 SOD-106 5×2,5 19

03C27PH Philips Z-Di BZG03-C27 SOD-106 5×2,5 19

03C30PH Philips Z-Di BZG03-C30 SOD-106 5×2,5 19

03C33PH Philips Z-Di BZG03-C33 SOD-106 5×2,5 19

03C36PH Philips Z-Di BZG03-C36 SOD-106 5×2,5 19

03C39PH Philips Z-Di BZG03-C39 SOD-106 5×2,5 19

03C43PH Philips Z-Di BZG03-C43 SOD-106 5×2,5 19

02 … 03C43PH

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Manufact.

Producent

Device

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0

03C47PH Philips Z-Di BZG03-C47 SOD-106 5×2,5 19

03C51PH Philips Z-Di BZG03-C51 SOD-106 5×2,5 19

03C56PH Philips Z-Di BZG03-C56 SOD-106 5×2,5 19

03C62PH Philips Z-Di BZG03-C62 SOD-106 5×2,5 19

03C68PH Philips Z-Di BZG03-C68 SOD-106 5×2,5 19

03C75PH Philips Z-Di BZG03-C75 SOD-106 5×2,5 19

03C82PH Philips Z-Di BZG03-C82 SOD-106 5×2,5 19

03C91PH Philips Z-Di BZG03-C91 SOD-106 5×2,5 19

03N06C RCA MOS-N-FET-e RFD03N06CLE TO-251, 252 8

03N06CLE RCA MOS-N-FET-e RLP03N06CLE TO-220 4

04 Philips Si-N+R PDTC114EK SC-59 10

04100PH Philips Z-Di BZG04-100 SOD-106 5×2,5 19

0410PH Philips Z-Di BZG04-10 SOD-106 5×2,5 19

04110PH Philips Z-Di BZG04-110 SOD-106 5×2,5 19

0411PH Philips Z-Di BZG04-11 SOD-106 5×2,5 19

04120PH Philips Z-Di BZG04-120 SOD-106 5×2,5 19

0412PH Philips Z-Di BZG04-12 SOD-106 5×2,5 19

04130PH Philips Z-Di BZG04-130 SOD-106 5×2,5 19

0413PH Philips Z-Di BZG04-13 SOD-106 5×2,5 19

04150PH Philips Z-Di BZG04-150 SOD-106 5×2,5 19

0415PH Philips Z-Di BZG04-15 SOD-106 5×2,5 19

04160PH Philips Z-Di BZG04-160 SOD-106 5×2,5 19

0416PH Philips Z-Di BZG04-16 SOD-106 5×2,5 19

04180PH Philips Z-Di BZG04-180 SOD-106 5×2,5 19

0418PH Philips Z-Di BZG04-18 SOD-106 5×2,5 19

04200PH Philips Z-Di BZG04-200 SOD-106 5×2,5 19

0420PH Philips Z-Di BZG04-20 SOD-106 5×2,5 19

04220PH Philips Z-Di BZG04-220 SOD-106 5×2,5 19

0422PH Philips Z-Di BZG04-22 SOD-106 5×2,5 19

0424PH Philips Z-Di BZG04-24 SOD-106 5×2,5 19

0427PH Philips Z-Di BZG04-27 SOD-106 5×2,5 19

0430PH Philips Z-Di BZG04-30 SOD-106 5×2,5 19

0433PH Philips Z-Di BZG04-33 SOD-106 5×2,5 19

0436PH Philips Z-Di BZG04-36 SOD-106 5×2,5 19

0439PH Philips Z-Di BZG04-39 SOD-106 5×2,5 19

03C47PH … 0439PH

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Manufact.

Producent

Device

Opis

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Odpowiednik

1

044 Thomson Si-N SO3571R SOT-23 10

0443PH Philips Z-Di BZG04-43 SOD-106 5×2,5 19

0447PH Philips Z-Di BZG04-47 SOD-106 5×2,5 19

0451PH Philips Z-Di BZG04-51 SOD-106 5×2,5 19

0456PH Philips Z-Di BZG04-56 SOD-106 5×2,5 19

0462PH Philips Z-Di BZG04-62 SOD-106 5×2,5 19

0468PH Philips Z-Di BZG04-68 SOD-106 5×2,5 19

047 Thomson Si-N SO3570R SOT-23 10

0475PH Philips Z-Di BZG04-75 SOD-106 5×2,5 19

0482PH Philips Z-Di BZG04-82 SOD-106 5×2,5 19

048V2PH Philips Z-Di BZG04-8V2 SOD-106 5×2,5 19

0491PH Philips Z-Di BZG04-91 SOD-106 5×2,5 19

049V1PH Philips Z-Di BZG04-9V1 SOD-106 5×2,5 19

05 Philips Si-P+R PDTA124EE SC-75 1,6 10

05 Philips Si-P+R PDTA124EK SC-59 10

05 Rohm Z-Di UDZ10B SOD-323 1,7 19

05 Rohm Z-Di UDZS10B SOD-323 1,7 19

05F AEG Si-N TSDF1205R SOT-143R 13

05J25 Origin Si-Di SS05J25 ~DO-41 9

06 Philips Si-N+R PDTC124EE SC-75 1,6 10

06 Philips Si-N+R PDTC124EK SC-59 10

066 Thomson Si-N SO269R SOT-23 10

07 Philips Si-P+R PDTA144EE SC-75 1,6 10

07 Philips Si-P+R PDTA144EK SC-59 10

08 Philips Si-N+R PDTC144EE SC-59 10

08 Philips Si-N+R PDTC144EE SC-75 1,6 10

087 Thomson Si-N SO502SR SOT-23 10

09 Philips Si-N+R PDTC114EE SC-75 1,6 10

09 Toshiba Si-Di 1SS377 SOT-23 10

09 Toshiba Si-Di 1SS378 SOT-323 2 10

09 Toshiba Si-Di 1SS385 SC-75 1,6 10

091 Thomson Si-N SO642R SOT-23 10

1

1 Hitachi Si-Di HSR101 SOD-123 2,7 19

044 … 1

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Kod

Manufact.

Producent

Device

Opis

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Odpowiednik

1

1 Hitachi C-Di HVR187 SOD-123 2,7 19

1 Siemens C-Di BB669 SOD-323 1,7 19

1.5J4 Origin Si-Di SS1.5J4 (2,8×2,3) 9

1.5J5 Origin Si-Di SS1.5J5 (2,8×2,3) 9

10 Matsushita Z-Di MA3A100 SOT-163 15

10 Matsushita Z-Di MAZF100 SOD-323 1,7 19

10 Matsushita Z-Di MAZN100 SOD-523 1,3 19

10 Matsushita Z-Di MAZS100 SOD-523 1,3 19

10 Motorola Si-N MRF9411 SOT-143 13

10 Philips Si-Di 1PS59SB10 SC-59 10

10 Siliconix N-FET SST110 SOT-23 10

10 (X, Y, Z) KEC Z-Di U02W10V SOT-23 10

100PH Philips Z-Di BZD23-C100 SOD-81 9

100PH Philips Z-Di BZD27-C100 SOD-87 20

101 Sanyo Si-P FC101 SOT-163 15

102 Sanyo Si-N FC102 SOT-163 15

103 Sanyo Si-P FC103 SOT-153 14

104 Sanyo Si-N FC104 SOT-153 14

105 Sanyo Si-P FC105 SOT-163 15

106 Sanyo Si-N FC106 SOT-163 15

107 Sanyo Si-P FC107 SOT-153 14

108 Sanyo Si-N FC108 SOT-153 14

109 Sanyo Si-P FC109 SOT-163 15

10A Matsushita Z-Di MA3100WA SOT-23 10

10A Zetex Ref-Z-IC ZXRE1004FF SOT-23 10

10B Hitachi Z-Di HZF10BP DO-214AC 5 19

10B Zetex Ref-Z-IC ZXRE1004EF SOT-23 10

10C Hitachi Z-Di HZF10CP DO-214AC 5 19

10C Zetex Ref-Z-IC ZXRE1004DF SOT-23 10

10D Zetex Ref-Z-IC ZXRE1004CF SOT-23 10

10F Zetex Ref-Z-IC ZXRE4041FF SOT-23 10

10G Zetex Ref-Z-IC ZXRE4041EF SOT-23 10

10H Zetex Ref-Z-IC ZXRE4041DF SOT-23 10

10J Zetex Ref-Z-IC ZXRE4041CF SOT-23 10

10K Matsushita Z-Di MA3100WK SOT-23 10

1 … 10K

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Manufact.

Producent

Device

Opis

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Typ

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Rys.

Equivalence

Odpowiednik

1

10PC3 Shindengen Si-Di DE10PC3 TO-252 8

10PH Philips Z-Di BZD23-C10 SOD-81 9

10PH Philips Z-Di BZD27-C10 SOD-87 20

10S3 Shindengen Si-Di DE10S3L TO-252 8

10SC3 Shindengen Si-Di DE10SC3L TO-252 8

10W Matsushita Z-Di MA3100W SOT-143 13

10Y Valvo Z-Di BZV49/C10 SOT-89 11 BZV85C10

11 Matsushita Z-Di MAZF110 SOD-323 1,7 19

11 Matsushita Z-Di MAZN110 SOD-523 1,3 19

11 Matsushita Z-Di MAZS110 SOD-523 1,3 19

11 Motorola Si-N MRF9511 SOT-143 13

11 National Si-Di MMBD1501 SOT-23 10

11 Philips Si-P+R PDTA114TU SC-75 1,6 10

11 Sanyo N-FET FC11 SOT-153 14

11 (X, Y, Z) KEC Z-Di U02W11V SOT-23 10

110 Sanyo Si-N FC110 SOT-163 15

110PH Philips Z-Di BZD23-C110 SOD-81 9

110PH Philips Z-Di BZD27-C110 SOD-87 20

111 Sanyo Si-P FC111 SOT-153 14

112 Sanyo Si-N FC112 SOT-153 14

113 Sanyo Si-P FC113 SOT-163 15

114 Sanyo Si-N FC114 SOT-163 15

115 Sanyo Si-P FC115 SOT-153 14

116 Sanyo Si-N FC116 SOT-153 14

117 Sanyo Si-P FC117 SOT-163 15

118 Sanyo Si-N FC118 SOT-163 15

119 Sanyo Si-N FC119 SOT-163 15

11B Hitachi Z-Di HZF11BP DO-214AC 5 19

11C Hitachi Z-Di HZF11CP DO-214AC 5 19

11D Philips Si-Di BYD11D SOD-91 9

11G Philips Si-Di BYD11G SOD-91 9

11J Philips Si-Di BYD11J SOD-91 9

11K Philips Si-Di BYD11K SOD-91 9

11M Philips Si-Di BYD11M SOD-91 9

11PH Philips Z-Di BZD23-C11 SOD-81 9

10PC3 … 11PH

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1

11PH Philips Z-Di BZD27-C11 SOD-87 20

11Y Valvo Z-Di BZV49/C11 SOT-89 11 BZV85C11

12 Matsushita Z-Di MAZF120 SOD-323 1,7 19

12 Matsushita Z-Di MAZN120 SOD-523 1,3 19

12 Matsushita Z-Di MAZS120 SOD-523 1,3 19

12 Rohm Z-Di UDZ2.2B SOD-323 1,7 19

12 Toshiba Z-Di U1Z12 SOD-6 6,4 19

12 (X, Y, Z) KEC Z-Di U02W12V SOT-23 10

120 Sanyo Si-N FC120 SOT-163 15

120PH Philips Z-Di BZD23-C120 SOD-81 9

120PH Philips Z-Di BZD27-C120 SOD-87 20

121 Sanyo Si-P FC121 SOT-153 14

123PH Philips Si-Di BYD123 SOD-81 9

12A Matsushita Z-Di MA3120WA SOT-23 10

12A Matsushita Z-Di MAZK120D SOT-153 14

12B Hitachi Z-Di HZF12BP DO-214AC 5 19

12C Hitachi Z-Di HZF12CP DO-214AC 5 19

12D Matsushita Z-Di MAZL120D SOT-153 14

12DPH Philips Si-Di BYD12D SOD-120 9

12F Zetex Ref-Z-IC ZXRE125FF SOT-23 10

12G Zetex Ref-Z-IC ZXRE125EF SOT-23 10

12GPH Philips Si-Di BYD12G SOD-120 9

12H Zetex Ref-Z-IC ZXRE125DF SOT-23 10

12J Zetex Ref-Z-IC ZXRE125CF SOT-23 10

12JPH Philips Si-Di BYD12J SOD-120 9

12KPH Philips Si-Di BYD12K SOD-120 9

12MPH Philips Si-Di BYD12M SOD-120 9

12PH Philips Z-Di BZD23-C12 SOD-81 9

12PH Philips Z-Di BZD27-C12 SOD-87 20

12Y Valvo Z-Di BZV49/C12 SOT-89 11 BZV85C12

13 Matsushita Z-Di MAZS130 SOD-523 1,3 19

13 National Si-Di MMBD1503 SOT-23 10

13 Siemens Si-Di BAS125 SOT-23 10 BAR42

13 Toshiba Z-Di U1Z13 SOD-6 6,4 19

13 (X, Y, Z) KEC Z-Di U02W13V SOT-23 10

11PH … 13

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1

130PH Philips Z-Di BZD23-C130 SOD-81 9

130PH Philips Z-Di BZD27-C130 SOD-87 20

13A Matsushita Z-Di MA3130WA SOT-23 10

13B Hitachi Z-Di HZF13BP DO-214AC 5 19

13C Hitachi Z-Di HZF13CP DO-214AC 5 19

13DPH Philips Si-Di BYD13D SOD-81 9

13GPH Philips Si-Di BYD13G SOD-81 9

13JPH Philips Si-Di BYD13J SOD-81 9

13KPH Philips Si-Di BYD13K SOD-81 9

13MPH Philips Si-Di BYD13M SOD-81 9

13PH Philips Z-Di BZD23-C13 SOD-81 9

13PH Philips Z-Di BZD27-C13 SOD-87 20

13R AEG MOS-N-FET-d S913TR SOT-143R 13

13s Siemens Si-Di BAS125W SOT-323 2 10

13t Philips Si-N/P BC847BPN SOT-363 15

13Y Valvo Z-Di BZV49/C13 SOT-89 11 BZV85C13

14 National Si-Di MMBD1504 SOT-23 10

14 Philips Si-Di 1PS59SB14 SC-59 10

14 Siemens Si-Di BAS125-04 SOT-23 10

143PH Philips Si-Di BYD143 SOD-81 9

14B Siemens Si-N BFR14B SOT-100 18

14C Siemens Si-N BFR14C 17

14N05L RCA MOS-N-FET-e RFD14N05L TO-251, 252 8

14N06L RCA MOS-N-FET-e RFD14N06L TO-251, 252 8

14s Siemens Si-Di BAS125-04W SOT-323 2 10

14s Siemens Si-Di BAT114-099 SOT-143 13

14s Siemens Si-Di BAT114-099R SOT-143 13

15 Matsushita Z-Di MAZS150 SOD-523 1,3 19

15 Motorola Si-N MMBT3960 SOT-23 10

15 National Si-Di MMBD1505 SOT-23 10

15 Philips Si-Di 1PS59SB15 SC-59 10

15 Rohm Z-Di UDZ11B SOD-323 1,7 19

15 Siemens Si-Di BAS125-05 SOT-23 10

15 Toshiba Z-Di U1Z15 SOD-6 6,4 19

15 (X, Y, Z) KEC Z-Di U02W15V SOT-23 10

130PH … 15

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Opis

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Odpowiednik

1

150PH Philips Z-Di BZD23-C150 SOD-81 9

150PH Philips Z-Di BZD27-C150 SOD-87 20

15B Hitachi Z-Di HZF15BP DO-214AC 5 19

15C Hitachi Z-Di HZF15CP DO-214AC 5 19

15PH Philips Z-Di BZD23-C15 SOD-81 9

15PH Philips Z-Di BZD27-C15 SOD-87 20

15s Siemens Si-Di BAS125-05W SOT-323 2 10

15Y Valvo Z-Di BZV49/C15 SOT-89 11 BZV85C15

16 Matsushita Z-Di MAZS160 SOD-523 1,3 19

16 Philips Si-Di 1PS59SB16 SC-59 10

16 Siemens Si-Di BAS125-06 SOT-23 10

16 Toshiba Z-Di U1Z16 SOD-6 6,4 19

16 (X, Y, Z) KEC Z-Di U02W16V SOT-23 10

160PH Philips Z-Di BZD23-C160 SOD-81 9

160PH Philips Z-Di BZD27-C160 SOD-87 20

163PH Philips Si-Di BYD163 SOD-81 9

16B Hitachi Z-Di HZF16BP DO-214AC 5 19

16C Hitachi Z-Di HZF16CP DO-214AC 5 19

16N03L RCA MOS-N-FET-e RFD16N03L TO-251, 252 8

16PH Philips Z-Di BZD23-C16 SOD-81 9

16PH Philips Z-Di BZD27-C16 SOD-87 20

16s Siemens Si-Di BAS125-06W SOT-323 2 10

16Y Valvo Z-Di BZV49/C16 SOT-89 11 BZV85C16

17 Siemens Si-Di BAS125-07 SOT-143 13

17-18PH Philips Si-Di BYD47-18 SOD-87 20

179 Zetex Si-N FMMT5179 SOT-23 10

17DPH Philips Si-Di BYD17D SOD-87 20

17GPH Philips Si-Di BYD17G SOD-87 20

17JPH Philips Si-Di BYD17J SOD-87 20

17KPH Philips Si-Di BYD17K SOD-87 20

17MPH Philips Si-Di BYD17M SOD-87 20

17s Siemens Si-Di BAS125-07W SOT-343 2 13

18 AEG Si-N BFP181T SOT-143 13

18 Matsushita Z-Di MAZS180 SOD-523 1,3 19

18 Siliconix N-FET SST108 SOT-23 10

150PH … 18

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1

18 Toshiba Z-Di U1Z18 SOD-6 6,4 19

18 (X, Y, Z) KEC Z-Di U02W18V SOT-23 10

180PH Philips Z-Di BZD23-C180 SOD-81 9

180PH Philips Z-Di BZD27-C180 SOD-87 20

181 Siemens Si-N BFQ181 SOT-173 17 BFQ77

182 Siemens Si-N BFQ182 SOT-173 17 BFQ66

18B Hitachi Z-Di HZF18BP DO-214AC 5 19

18C Hitachi Z-Di HZF18CP DO-214AC 5 19

18PH Philips Z-Di BZD23-C18 SOD-81 9

18PH Philips Z-Di BZD27-C18 SOD-87 20

18Y Valvo Z-Di BZV49/C18 SOT-89 11 BZV85C18

19 Siliconix N-FET SST109 SOT-23 10

193 AEG Si-N BFP193T SOT-143 13

194 AEG Si-P BFR194R SOT-23 10

194 Siemens Si-P BFQ194 SOT-173 17

196 Siemens Si-N BFQ196 SOT-173 17

1A Ferranti Si-N FMMT3904 SOT-23 10

1A Matsushita Si-P 2SB779 SOT-23 10

1A Matsushita Si-Di MA110 SOD-323 1,7 19

1A Motorola Si-N MMBT3904 SOT-23 10 BC846

1A National Si-N MMBT3904 SOT-23 10

1A Philips Si-N BC846AT SC-75 1,6 10

1A Samsung Si-N KST3904 SOT-23 10

1A Samsung Si-N MMBT3904 SOT-23 10

1A Siemens Si-N SMBT3904 SOT-23 10 BC846

1A Siemens Si-N SXT3904 SOT-89 11 2SC3803

1A Toshiba Si-N YTS3904 SOT-23 10

1A Philips Si-N BC846AW SOT-323 2 10

1A Philips Si-N BC846A SOT-23 10 BC546A

1A Siemens Si-N BC846A SOT-23 10 BC546A

1AG Toshiba Si-N 2SC3339-GR SOT-23 10

1AG Toshiba Si-N/P HN1B01F-GR SOT-163 15

1AG Toshiba Si-N/P HN1B01FU-GR SOT-363 2 15

1AL Toshiba Si-N 2SC3339-BL SOT-23 10

1AM Motorola Si-N MMBT3904 SOT-23 10

18 … 1AM

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Producent

Device

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1

1AO Toshiba Si-N 2SC3339-O SOT-23 10

1AQ Matsushita Si-P 2SB1584-Q (T Mini) ~10

1AQ Matsushita Si-P 2SB779-Q SOT-23 10

1AR Matsushita Si-P 2SB1584-R (T Mini) ~10

1AR Matsushita Si-P 2SB779-R SOT-23 10

1AR Philips Si-N BC846AR SOT-23 10 BC546A

1AR Siemens Si-N BC846AR SOT-23 10 BC546A

1AR Valvo Si-N BC846AR SOT-23 10

1AS Matsushita Si-P 2SB1584-S (T Mini) ~10

1AS Matsushita Si-P 2SB779-S SOT-23 10

1As Siemens Si-N BC846AW SOT-323 2 10

1AY Toshiba Si-N 2SC3339-Y SOT-23 10

1AY Toshiba Si-N/P HN1B01FU-Y SOT-363 2 15

1AY Toshiba Si-N/P HN1B01F-Y SOT-163 15

1B Ferranti Si-N FMMT2222 SOT-23 10

1B Matsushita Si-Di MA111 SOD-323 1,7 19

1B Motorola Si-N MMBT2222 SOT-23 10 BSS81

1B National Si-N 2N2222 SOT-163 15

1B Philips Si-N BC846BT SC-75 1,6 10

1B Samsung Si-N KST2222 SOT-23 10

1B Samsung Si-N MMBT2222 SOT-23 10

1B Siemens Si-N SMBT2222 SOT-23 10 BSS81

1B Toshiba Si-N YTS2222 SOT-23 10

1B Philips Si-N BC846BW SOT-323 2 10

1B Philips Si-N BC846B SOT-23 10

1B Siemens Si-N BC846B SOT-23 10 BC546B

1BG Toshiba Si-N 2SC3340-GR SOT-23 10

1BL Toshiba Si-N 2SC3340-BL SOT-23 10

1BR Philips Si-N BC846BR SOT-23 10

1BR Siemens Si-N BC846BR SOT-23 10 BC536B

1Bs Siemens Si-N BC846BW SOT-323 2 10

1BZ Toshiba Si-Di U1BZ41 SOD-6 6,4 19

1C Ferranti Si-N FMMTA20 SOT-23 10

1C Matsushita Si-Di MA112 SOD-323 1,7 19

1C Motorola Si-N MMBTA20 SOT-23 10 BC847

1AO … 1C

http://www.serwis-elektroniki.com.pl/

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1

1C Samsung Si-N KST20 SOT-23 10

1C Samsung Si-N MMBTA20 SOT-23 10 BC847

1C Siemens Si-N SMBTA20 SOT-23 10 BC847

1CL Rohm Si-N 2SC4082-L SOT-323 2 10

1CM Rohm Si-N 2SC4082-M SOT-323 2 10

1CN Rohm Si-N 2SC4082-N SOT-323 2 10

1CO Toshiba Si-N 2SC3341-O SOT-23 10

1CP Rohm Si-N 2SC4082-P SOT-323 2 10

1CQ Rohm Si-N 2SC4082-Q SOT-323 2 10

1Cs Siemens Si-N BC847S SOT-363 2 15

1CY Toshiba Si-N 2SC3341-Y SOT-23 10

1D Matsushita Si-N 2SB1328 SOT-23 10

1D Matsushita Si-Di MA113 SOD-323 1,7 19

1D Motorola Si-N MMBTA42 SOT-23 10

1D National Si-N MMBTA42 SOT-23 10

1D Samsung Si-N KST42 SOT-23 10

1D Samsung Si-N MMBTA42 SOT-23 10

1D Siemens Si-N SMBTA42 SOT-23 10

1D Siemens Si-N SXTA42 SOT-89 11

1D Philips Si-N BC846 SOT-23 10

1D Philips Si-N BC846W SOT-323 2 10

1DL Rohm Si-N 2SC408S-L SOT-323 2 10

1DM Rohm Si-N 2SC4083-M SOT-323 2 10

1DN Rohm Si-N 2SC4083-N SOT-323 2 10

1DP Rohm Si-N 2SC4083-P SOT-323 2 10

1DQ Rohm Si-N 2SC4083-Q SOT-323 2 10

1DR Matsushita Si-N 2SD1328-R SOT-23 10

1DR Matsushita Si-N 2SD2436-R (T Mini) ~10

1DS Matsushita Si-N 2SD1328-S SOT-23 10

1DS Matsushita Si-N 2SD2436-S (T Mini) ~10

1Ds Siemens Si-N BC846S SOT-363 2 15

1DT Matsushita Si-N 2SD1328-T SOT-23 10

1DT Matsushita Si-N 2SD2436-T (T Mini) ~10

1DZ Toshiba Si-Di U1DZ41 SOD-6 6,4 19

1E Ferranti Si-N FMMTA43 SOT-23 10

1C … 1E

http://www.serwis-elektroniki.com.pl/

Page 288:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

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1

1E Matsushita Si-Di MA114 SOD-323 1,7 19

1E Motorola Si-N MMBTA43 SOT-23 10

1E National Si-N MMBTA43 SOT-23 10

1E Philips Si-N BC847AT SC-75 1,6 10

1E Samsung Si-N KST43 SOT-23 10

1E Samsung Si-N MMBTA43 SOT-23 10

1E Siemens Si-N SMBTA43 SOT-23 10

1E Siemens Si-N SXTA43 SOT-89 11

1E Philips Si-N BC847AW SOT-323 2 10

1E Philips Si-N BC847A SOT-23 10 BC547A

1E Siemens Si-N BC847A SOT-23 10 BC547A

1EL Rohm Si-N 2SC4084-L SOT-323 2 10

1EM Rohm Si-N 2SC4084-M SOT-323 2 10

1EN Rohm Si-N 2SC4084-N SOT-323 2 10

1EP Rohm Si-N 2SC4084-P SOT-323 2 10

1EQ Rohm Si-N 2SC4084-Q SOT-323 2 10

1ER Philips Si-N BC847AR SOT-23 10 BC547A

1ER Siemens Si-N BC847AR SOT-23 10 BC547A

1Es Siemens Si-N BC847AW SOT-323 2 10

1F Matsushita Si-N 2SC4543 SOT-89 11

1F Matsushita Si-Di MA115 SOD-323 1,7 19

1F Motorola Si-N MMBT5550 SOT-23 10

1F National Si-N MMBT5550 SOT-23 10

1F Philips Si-N BC847B SOT-23 3 BC547B

1F Philips Si-N BC847BT SC-75 1,6 10

1F Samsung Si-N KST5550 SOT-23 10

1F Samsung Si-N MMBT5550 SOT-23 10

1F Siemens Si-N BC847B SOT-23 3 BC547B

-1F Philips Si-N PMST5550 SOT-323 2 10

1F Philips Si-N BC847BW SOT-323 2 10

1F Philips Si-N BC847B SOT-23 10

1F Siemens Si-N BC847B SOT-23 10

1FP Matsushita N-FET 2SK321-P SOT-23 10

1FQ Matsushita N-FET 2SK321-Q SOT-23 10

1FR Matsushita N-FET 2SK321-R SOT-23 10

1E … 1FR

http://www.serwis-elektroniki.com.pl/

Page 289:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

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Dim.

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Fig.

Rys.

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Odpowiednik

1

1FR Philips Si-N BC847BR SOT-23 10 BC547B

1FR Siemens Si-N BC847BR SOT-23 10 BC547B

1FS Matsushita N-FET 2SK321-S SOT-23 10

1Fs Siemens Si-N BC847BW SOT-323 2 10

1Ft Philips Si-N BC847BS SOT-363 15

1G Ferranti Si-N FMMTA06 SOT-23 10

1G Motorola Si-N MMBTA06 SOT-23 10

1G National Si-N MMBTA06 SOT-23 10

1G Philips Si-N BC847C SOT-23 10 BC547C

1G Philips Si-N BC847CT SC-75 1,6 10

1G Samsung Si-N KST06 SOT-23 10

1G Samsung Si-N MMBTA06 SOT-23 10

1G Siemens Si-N BC847C SOT-23 10 BC547C

1G Siemens Si-N SMBTA06 SOT-23 10 BCW66

1G Philips Si-N BC847CW SOT-323 2 10

1GM Motorola Si-N MMBTA06 SOT-23 10

1GR Philips Si-N BC847CR SOT-23 10 BC547C

1GR Siemens Si-N BC847CR SOT-23 10 BC547C

1Gs Siemens Si-N BC847CW SOT-323 2 10

1GT Thomson Si-N SOA06 SOT-23 10

1GZ Toshiba Si-Di U1GZ41 SOD-6 6,4 19

1H Ferranti Si-N FMMTA05 SOT-23 10

1H Matsushita Si-N 2SD2185 SOT-89 11

1H Matsushita N-FET 2SK123 ~SOT-23 10

1H Matsushita N-FET 2SK1860 ~10

1H Matsushita Si-Di MA116 SOD-323 1,7 19

1H Motorola Si-N MMBTA05 SOT-23 10

1H Samsung Si-N KST05 SOT-23 10

1H Samsung Si-N MMBTA05 SOT-23 10

1H Siemens Si-N SMBTA05 SOT-23 10 BCW65

1H Philips Si-N BC847 SOT-23 10

1H Philips Si-N BC847W SOT-323 2 10

1HR Matsushita Si-N 2SD2185-R SOT-89 11

1HS Matsushita Si-N 2SD2185-S SOT-89 11

1HT Thomson Si-N SOA05 SOT-23 10

1FR … 1HT

http://www.serwis-elektroniki.com.pl/

Page 290:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

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Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

1

1I Matsushita Si-P 2SB1440 SOT-89 11

1IR Matsushita Si-P 2SB1440-R SOT-89 11

1IS Matsushita Si-P 2SB1440-S SOT-89 11

1J Ferranti Si-N FMMT2369 SOT-23 10

1J Philips Si-N BC848A SOT-23 10 BC548A

1J Philips Si-N BC848AT SC-75 1,6 10

1J Siemens Si-N BC848A SOT-23 10 BC548A

-1J Philips Si-N PMST2369 SOT-323 2 10

1J Philips Si-N BC848AW SOT-323 2 10

1J Philips Si-N BC848A SOT-23 10

1J Siemens Si-N BC848A SOT-23 10

1J. Motorola Si-N MMBT2369 SOT-23 10

1J2 Origin Si-Di SS1J2 (2,8×2,3) 9

1J4 Origin Si-Di SS1J4 (2,8×2,3) 9

1J6 Origin Si-Di SS1J6 (2,8×2,3) 9

1JA Motorola Si-N MMBT2369A SOT-23 10

1Jp Philips Si-N BCV61A SOT-143 13

1Jp Siemens Si-N BCV61A SOT-143 13

1JR Philips Si-N BC848AR SOT-23 10 BC548A

1JR Siemens Si-N BC848AR SOT-23 10 BC548A

1Js Philips Si-N BCV61A SOT-143 13

1Js Siemens Si-N BC848AW SOT-323 2 10

1Js Siemens Si-N BCV61A SOT-143 13

1JZ Toshiba Si-Di U1Z41 SOD-6 6,4 19

1K Motorola Si-N MMBT6428 SOT-23 10

1K Philips Si-N BC848B SOT-23 10 BC548B

1K Philips Si-N BC848BT SC-75 1,6 10

1K Philips Si-N BCV61B SOT-143 13

1K Samsung Si-N KST6428 SOT-23 10

1K Siemens Si-N BC848B SOT-23 10 BC548B

1K Siemens Si-N BCV61B SOT-143 13

1K Siemens Si-N SMBT6428 SOT-23 10 BC850

-1K Philips Si-N PMST6428 SOT-323 2 10

1K Philips Si-N BC848BW SOT-323 2 10

1KM Motorola Si-N MMBT6428 SOT-23 10

1I … 1KM

http://www.serwis-elektroniki.com.pl/

Page 291:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

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Rys.

Equivalence

Odpowiednik

1

1KP Matsushita N-FET 2SK316-P SOT-23 10

1Kp Philips Si-N BCV61B SOT-143 13

1KQ Matsushita N-FET 2SK316-Q SOT-23 10

1KR Matsushita Si-N 2SD2210-R SOT-89 11

1KR Philips Si-N BC848BR SOT-23 10 BC548B

1KR Siemens Si-N BC848BR SOT-23 10 BC548B

1KS Matsushita Si-N 2SD2210-S SOT-89 11

1Ks Siemens Si-N BC848BW SOT-323 2 10

1Ks Siemens Si-N BCV61B SOT-143 13

1KT Matsushita Si-N 2SD2210-T SOT-89 11

1L Matsushita Si-P 2SB1537 SOT-89 11

1L Motorola Si-N MMBT6429 SOT-23 10

1L Philips Si-N BC848CT SC-75 1,6 10

1L Samsung Si-N MMBT6429 SOT-23 10

1L Siemens Si-N SMBT6429 SOT-23 10 BC850

-1L Philips Si-N PMST6429 SOT-323 2 10

1L Philips Si-N BC848CW SOT-323 2 10

1L Philips Si-N BC848C SOT-23 10 BC548C

1L Siemens Si-N BC848C SOT-23 10 BC548C

1LM Rohm Si-N 2SC4103-M SOT-323 2 10

1LN Rohm Si-N 2SC4103-N SOT-323 2 10

1Lp Philips Si-N BCV61C SOT-143 13

1LP Rohm Si-N 2SC4103-P SOT-323 2 10

1Lp Siemens Si-N BCV61C SOT-143 13

1LQ Rohm Si-N 2SC4103-Q SOT-323 2 10

1LR Philips Si-N BC848CR SOT-23 10 BC548C

1LR Siemens Si-N BC848CR SOT-23 10 BC548C

1Ls Siemens Si-N BC848CW SOT-323 2 10

1Ls Siemens Si-N BCV61C SOT-143 13

1M Ferranti Si-N FMMTA13 SOT-23 10

1M ITT Si-N IMBT3903 SOT-23 10

1M Matsushita Si-N 2SD2357 SOT-89 11

1M Motorola Si-N MMBTA13 SOT-23 10

1M Samsung Si-N KST13 SOT-23 10

1M Samsung Si-N MMBTA13 SOT-23 10

1KP … 1M

http://www.serwis-elektroniki.com.pl/

Page 292:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

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Opis

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Wymiary

Fig.

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Odpowiednik

1

1M Siemens Si-N-Darl SMBTA13 SOT-23 10 2SD1475

1M Philips Si-N BC848 SOT-23 10

1M Philips Si-N BC848W SOT-323 2 10

1MN Matsushita Si-N 2SC4128-N SOT-323 2 10

1MP Matsushita Si-N 2SC4128-P SOT-323 2 10

1MP Matsushita Si-P 2SJ84-P SOT-23 10

1Mp Philips Si-N BCV61 SOT-143 13

1Mp Siemens Si-N BCV61 SOT-143 13

1MQ Matsushita Si-P 2SJ84-Q SOT-23 10

1MR Matsushita Si-P 2SJ84-R SOT-23 10

1N Ferranti Si-N FMMTA14 SOT-23 10

1N ITT Si-N IMBT3904 SOT-23 10

1N Matsushita Si-P 2SB1539 SOT-89 11

1N Motorola Si-N MMBTA14 SOT-23 10

1N National Si-N MMBTA14 SOT-23 10

1N Samsung Si-N KST14 SOT-23 10

1N Samsung Si-N MMBTA14 SOT-23 10

1N Siemens Si-N-Darl SMBTA14 SOT-23 10 2SD1475

1N10 Motorola MOS-N-FET-e MMFT1N10E SOT-223 16

1N137 Mitsubishi Si-N+R RT1N137L TO-92L 9 1

1N5 Zetex Si-N ZXT11N15DF SOT-23 10

1O Matsushita Si-N 2SD2359 SOT-89 11

1O Matsushita N-FET 2SK198 SOT-23 10

1O Matsushita N-FET 2SK662 SOT-323 2 10

1OP Matsushita N-FET 2SK198-P SOT-23 10

1OP Matsushita N-FET 2SK662-P SOT-323 2 10

1OQ Matsushita N-FET 2SK198-Q SOT-23 10

1OQ Matsushita N-FET 2SK662-Q SOT-323 2 10

1OR Matsushita N-FET 2SK198-R SOT-23 10

1OR Matsushita N-FET 2SK662-R SOT-323 2 10

1Os Siemens Si-N/P BC846PN SOT-363 2 15

1P Ferranti Si-N FMMT2222A SOT-23 10

1P Motorola Si-N MMBT2222A SOT-23 10

1P National Si-N MMBT2222A SOT-23 10

1P Samsung Si-N KST2222A SOT-23 10

1M … 1P

http://www.serwis-elektroniki.com.pl/

Page 293:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

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Odpowiednik

1

1P Samsung Si-N MMBT2222A SOT-23 10

1P Siemens Si-N SMBT2222A SOT-23 10

1P Toshiba Si-N YTS2222A SOT-23 10

1P137 Mitsubishi Si-P+R RT1P137L TO-92L 9 1

1Ps Siemens Si-N/P BC847PN SOT-363 2 15

1Q Motorola Si-N MMBT5088 SOT-23 10

1Q National Si-N MMBT5088 SOT-23 10

1Q Samsung Si-N KST5088 SOT-23 10

1Q Samsung Si-N MMBT5088 SOT-23 10

1R Matsushita Si-P 2SB970 SOT-23 10

1R Matsushita Si-N 2SC4929 SOT-89 11

1R Motorola Si-N MMBT5089 SOT-23 10

1R National Si-N MMBT5089 SOT-23 10

1R Samsung Si-N KST5089 SOT-23 10

1R Samsung Si-N MMBT5089 SOT-23 10

1RQ Matsushita Si-P 2SB1585-Q (T Mini) ~10

1RQ Matsushita Si-P 2SB970-Q SOT-23 10

1RR Matsushita Si-P 2SB1585-R (T Mini) ~10

1RR Matsushita Si-P 2SB970-R SOT-23 10

1RS Matsushita Si-P 2SB1585-S (T Mini) ~10

1RS Matsushita Si-P 2SB970-S SOT-23 10

1S Matsushita Si-N 2SC3130 SOT-23 10

1S Matsushita Si-N 2SC3935 SOT-323 2 10

1S Matsushita Si-N 2SC4809 SC-75 1,6 10

1S Matsushita Si-N 2SD2413 SOT-89 11

1S National Si-N MMBT2369A SOT-23 10

1S30N06L RCA MOS-N-FET-e RF1S30N06LE TO-263 8

1SP Matsushita Si-N 2SC3130-P SOT-23 10

1SP Matsushita Si-N 2SC3935-P SOT-323 2 10

1SQ Matsushita Si-N 2SC3130-Q SOT-23 10

1SQ Matsushita Si-N 2SC3935-Q SOT-323 2 10

1SR Matsushita Si-N 2SC3130-R SOT-23 10

1SR Matsushita Si-N 2SC3935-R SOT-323 2 10

1T Matsushita Si-N 2SC3077 SOT-23 10

1T Matsushita Si-N 2SC3933 SOT-323 2 10

1P … 1T

http://www.serwis-elektroniki.com.pl/

Page 294:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

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Device

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Odpowiednik

1

1T Matsushita Si-N 2SC4975 (T Mini) ~10

1T Matsushita Si-N-Darl 2SD2416 SOT-89 11

1T Motorola Si-N MMBT3960A SOT-23 10

1T1 Rohm Si-P MMST5101 SOT-23 10

1T1 Rohm Si-P SST5101 SOT-23 10

1TQ Rohm Si-N 2SC4773-Q SOT-323 2 10

1TR Rohm Si-N 2SC4773-R SOT-323 2 10

1TS Rohm Si-N 2SC4773-S SOT-323 2 10

1U Matsushita Si-N 2SC3110 SOT-23 10

1U Matsushita Si-N 2SC3934 SOT-323 2 10

1U Motorola Si-N MMBT2484 SOT-23 10

1U National Si-N MMBT2484 SOT-23 10

1U Samsung Si-N KST2484 SOT-23 10

1U Samsung Si-N MMBT2484 SOT-23 10

1V AEG Si-N BF820 SOT-23 10 BF420

1V Matsushita Si-N 2SD1149 SOT-23 10

1V Matsushita Si-N 2SD1824 SOT-323 2 10

1V Matsushita Si-N 2SD2441 SOT-89 11

1V Motorola Si-N MMBT6427 SOT-23 10

1V National Si-N MMBT6427 SOT-23 10

1V Samsung Si-N MMBT6427 SOT-23 10

1V Siemens Si-N-Darl SMBT6427 SOT-23 10 BCV27

1V Philips Si-N BF820 SOT-23 10 BF420

1V01H Toshiba Si-Di HN1V01H MDIP-8 23

1V02H Toshiba Si-Di HN1V02H MDIP-8 23

1VR Matsushita Si-N 2SD1149-R SOT-23 10

1VR Matsushita Si-N 2SD1824-R SOT-323 2 10

1VS Matsushita Si-N 2SD1149-S SOT-23 10

1VS Matsushita Si-N 2SD1824-S SOT-323 2 10

1VT Matsushita Si-N 2SD1149-T SOT-23 10

1VT Matsushita Si-N 2SD1824-T SOT-323 2 10

1W AEG Si-P BF821 SOT-23 10 BF421

1W Ferranti Si-N FMMT3903 SOT-23 10

1W Philips Si-P BF821 SOT-23 10 BF421

1X AEG Si-N BF822 SOT-23 10 BF422

1T … 1X

http://www.serwis-elektroniki.com.pl/

Page 295:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

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Typ

Case

Obudowa

Dim.

Wymiary

Fig.

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Equivalence

Odpowiednik

1

1X Matsushita Si-P 2SB1599 SOT-89 11

1X Matsushita Si-N 2SC2845 SOT-23 10

1X Motorola Si-N MMBT930 SOT-23 10 2SC3323

1X Samsung Si-N MMBT930 SOT-23 10 2SC3323

1X Philips Si-N BF822 SOT-23 10 BF422

1XB Matsushita Si-N 2SC4780-B SOT-323 2 10

1XC Matsushita Si-N 2SC4780-C SOT-323 2 10

1Y AEG Si-P BF823 SOT-23 10 BF423

1Y Matsushita Si-N 2SD2457 SOT-89 11

1Y Motorola Si-N MMBT3903 SOT-23 10 BC846

1Y Samsung Si-N KST3903 SOT-23 10

1Y Samsung Si-N MMBT3903 SOT-23 10

1Y Toshiba Si-N YTS3903 SOT-23 10

1Y Philips Si-P BF823 SOT-23 10 BF423

1YQ Matsushita Si-N 2SD2457-Q SOT-89 11

1YR Matsushita Si-N 2SD2457-R SOT-89 11

1Z Matsushita Si-P 2SB1890 SOT-89 11

1Z Matsushita Si-N 2SD1030 SOT-23 10

1Z Matsushita Si-N 2SD1823 SOT-323 2 10

1Z Matsushita Si-N 2SD2345 SOT-323 1,6 10

1Z Motorola Si-N MMBT6517 SOT-23 10

1Z Zetex Si-Di BAS70-06 SOT-23 10

1ZQ Matsushita Si-P 2SA1890-Q SOT-89 11

1ZR Matsushita Si-P 2SA1890-R SOT-89 11

1ZR Matsushita Si-N 2SD1030-R SOT-23 10

1ZR Matsushita Si-N 2SD1823-R SOT-323 2 10

1ZR Matsushita Si-N 2SD2345-R SS-Mini 1,6 10

1ZR Matsushita Si-N 2SD2433-R (T Mini) ~10

1ZS Matsushita Si-N 2SD1030-S SOT-23 10

1ZS Matsushita Si-N 2SD1823-S SOT-323 2 10

1ZS Matsushita Si-N 2SD2345-S SS-Mini 1,6 10

1ZS Matsushita Si-N 2SD2433-S (T Mini) ~10

1ZT Matsushita Si-N 2SD1030-T SOT-23 10

1ZT Matsushita Si-N 2SD1823-T SOT-323 2 10

1ZT Matsushita Si-N 2SD2345-T SS-Mini 1,6 10

1X … 1ZT

http://www.serwis-elektroniki.com.pl/

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Odpowiednik 21ZT Matsushita Si-N 2SD2433-T (T Mini) ~10

2

2 Hitachi C-Di 1SV200 SOD-123 2,7 19

2 Hitachi C-Di HVC200A SOD-523 1,3 19

2 Hitachi C-Di HVE200A SOD-523 1,3 19

2 Hitachi C-Di HVR100 SOD-123 2,7 19

2 Hitachi C-Di HVU200 (A) SOD-323 1,7 19

2 Matsushita Z-Di MAZS027 SOD-523 1,3 19

2 Rohm Diode RB500V-40 SOD-323 1,7 19

2 Rohm Z-Di UDZ2.0B SOD-323 1,7 19

2 Siemens PIN-Di BAR64-03W (SCD-80) 1,7 19

2.0B Hitachi Z-Di HZF2.0BP DO-214AC 5 19

2.0B Hitachi Z-Di HZF2.0BP DO-214AC 5 19

2.0C Hitachi Z-Di HZF2.0CP DO-214AC 5 19

2.2B Hitachi Z-Di HZF2.2BP DO-214AC 5 19

2.2C Hitachi Z-Di HZF2.2CP DO-214AC 5 19

2.4B Hitachi Z-Di HZF2.4BP DO-214AC 5 19

2.4C Hitachi Z-Di HZF2.4CP DO-214AC 5 19

2.7B Hitachi Z-Di HZF2.7BP DO-214AC 5 19

2.7C Hitachi Z-Di HZF2.7CP DO-214AC 5 19

20 Matsushita Z-Di MAZS200 SOD-523 1,3 19

20 Toshiba Z-Di U1Z20 SOD-6 6,4 19

20 (X, Y, Z) KEC Z-Di U02W20V SOT-23 10

200PH Philips Z-Di BZD23-C200 SOD-81 9

200PH Philips Z-Di BZD27-C200 SOD-87 20

20A Matsushita Z-Di MA3200WA SOT-23 10

20B Hitachi Z-Di HZF20BP DO-214AC 5 19

20C Hitachi Z-Di HZF20CP DO-214AC 5 19

20F AEG Si-N TSDF1220R SOT-143R 13

20PH Philips Z-Di BZD23-C20 SOD-81 9

20PH Philips Z-Di BZD27-C20 SOD-87 20

20W Matsushita Z-Di MA3200W SOT-143 13

20Y Valvo Z-Di BZV49/C20 SOT-89 11 BZV85C20

22 Matsushita Z-Di MAZS220 SOD-523 1,3 19

1ZT … 22

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Odpowiednik222 Origin Si-Di SM-1XZ02 (2,8×2,3) 9

22 Rohm Z-Di UDZ2.4B SOD-323 1,7 19

22 Toshiba Z-Di U1Z22 SOD-6 6,4 19

22 (X, Y, Z) KEC Z-Di U02W22V SOT-23 10

220PH Philips Z-Di BZD23-C220 SOD-81 9

220PH Philips Z-Di BZD27-C220 SOD-87 20

22B Hitachi Z-Di HZF22BP DO-214AC 5 19

22C Hitachi Z-Di HZF22CP DO-214AC 5 19

22C Origin Z-Di F1C2200 DO-214AC 5 19

22D Origin Z-Di F1C2230 DO-214AC 5 19

22F Origin Z-Di F1C2250 DO-214AC 5 19

22G Origin Z-Di F1C2260 DO-214AC 5 19

22H Origin Z-Di F1C2270 DO-214AC 5 19

22I Origin Z-Di F1C2280 DO-214AC 5 19

22J Origin Z-Di F1C2290 DO-214AC 5 19

22PH Philips Z-Di BZD23-C22 SOD-81 9

22PH Philips Z-Di BZD27-C22 SOD-87 20

22Y Valvo Z-Di BZV49/C22 SOT-89 11 BZV85C22

23 Philips Si-P+R PDTA114TK SC-59 10

23A Origin Z-Di F1C2300 DO-214AC 5 19

23B Origin Z-Di F1C2310 DO-214AC 5 19

23C Origin Z-Di F1C2320 DO-214AC 5 19

23D Origin Z-Di F1C2330 DO-214AC 5 19

24 Matsushita Z-Di MAZS240 SOD-523 1,3 19

24 National Si-Di MMBD1201 SOT-23 10

24 NEC Si-N 2SC5004-FB SS Mini 1,6 10

24 Origin Si-Di SM-1XZ04 (2,8×2,3) 9

24 Philips Si-N+R PDTC114TE SC-75 1,6 10

24 Philips Si-N+R PDTC114TK SC-59 10

24 Toshiba Z-Di U1Z24 SOD-6 6,4 19

24 (X, Y, Z) KEC Z-Di U02W24V SOT-23 10

240PH Philips Z-Di BZD23-C240 SOD-81 9

240PH Philips Z-Di BZD27-C240 SOD-87 20

24B Hitachi Z-Di HZF24BP DO-214AC 5 19

24C Hitachi Z-Di HZF24CP DO-214AC 5 19

22 … 24C

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Odpowiednik 224PH Philips Z-Di BZD23-C24 SOD-81 9

24PH Philips Z-Di BZD27-C24 SOD-87 20

24R NEC Si-N µPA810T-FB SOT-363 2 15

24Y Valvo Z-Di BZV49/C24 SOT-89 11 BZV85C24

25 Rohm Z-Di UDZ12B SOD-323 1,7 19

25R NEC Si-N µPA810T-GB SOT-363 2 15

26 National Si-Di MMBD1203 SOT-23 10

27 Matsushita Z-Di MAZS270 SOD-523 1,3 19

27 National Si-Di MMBD1204 SOT-23 10

27 Toshiba Z-Di U1Z27 SOD-6 6,4 19

270PH Philips Z-Di BZD23-C270 SOD-81 9

270PH Philips Z-Di BZD27-C270 SOD-87 20

27A Hitachi Z-Di HZM27FA SOT-23 10

27A Hitachi Z-Di HZM27WA SOT-23 10

27A Matsushita Z-Di MAZK270D SOT-153 14

27B Hitachi Z-Di HZF27BP DO-214AC 5 19

27C Hitachi Z-Di HZF27CP DO-214AC 5 19

27PH Philips Z-Di BZD23-C27 SOD-81 9

27PH Philips Z-Di BZD27-C27 SOD-87 20

27Y Valvo Z-Di BZV49/C27 SOT-89 11 BZV85C27

28 AEG Si-N BFP280T SOT-143 13

28 National Si-Di MMBD1205 SOT-23 10

28 Siemens Si-N BFQ28 SOT-100 18

29 National Si-Di MMBD1401 SOT-23 10

2955 Motorola MOS-N-FET-e MMFT2955E SOT-223 16

2A Ferranti Si-P FMMT3906 SOT-23 10

2A Matsushita Si-N 2SC5036 SOT-89 11

2A Matsushita Si-N 2SD1304 SOT-23 10

2A Matsushita Si-Di MA728 SOD-323 1,7 19

2A Motorola Si-P MMBT3906 SOT-23 10

2A National Si-P MMBT3906 SOT-23 10

2A Samsung Si-P KST3906 SOT-23 10

2A Samsung Si-P MMBT3906 SOT-23 10

2A Siemens Si-P SMBT3906 SOT-23 10 BC856

2A Siemens Si-P SXT3906 SOT-89 11 2SA1483

24PH … 2A

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Odpowiednik22A Toshiba Si-P YTS3906 SOT-23 10

2AQ Matsushita Si-N 2SD1304-Q SOT-23 10

2AR Matsushita Si-N 2SC5026-R SOT-89 11

2AR Matsushita Si-N 2SD1304-R SOT-23 10

2AS Matsushita Si-N 2SC5026-S SOT-89 11

2AS Matsushita Si-N 2SD1304-S SOT-23 10

2B Ferranti Si-P FMMT2907 SOT-23 10

2B Matsushita N-FET 2SK2593 SC-75 1,6 10

2B Matsushita N-FET 2SK374 SOT-23 10

2B Matsushita N-FET 2SK663 SOT-323 2 10

2B Matsushita Si-Di MA729 SOD-323 1,7 19

2B Motorola Si-P MMBT2907 SOT-23 10

2B National Si-P 2N2907 SOT-163 15

2B Samsung Si-P KST2907 SOT-23 10

2B Samsung Si-P MMBT2907 SOT-23 10

2B Siemens Si-P SMBT2907 SOT-23 10 BSS82

2B Toshiba Si-P YTS2907 SOT-23 10

2B Philips Si-N BC849BW SOT-323 2 10

2B Philips Si-N BC849B SOT-23 10 BC549B

2B Siemens Si-N BC849B SOT-23 10 BC549B

2BP Matsushita N-FET 2SK2593-P SS Mini 1,6 10

2BP Matsushita N-FET 2SK374-P SOT-23 10

2BP Matsushita N-FET 2SK663-P SOT-323 2 10

2BQ Matsushita N-FET 2SK2593-Q SS Mini 1,6 10

2BQ Matsushita N-FET 2SK374-Q SOT-23 10

2BQ Matsushita N-FET 2SK663-Q SOT-323 2 10

2BR Matsushita N-FET 2SK2593-R SS Mini 1,6 10

2BR Matsushita N-FET 2SK374-R SOT-23 10

2BR Matsushita N-FET 2SK663-R SOT-323 2 10

2BR Philips Si-N BC849BR SOT-23 10 BC549B

2BR Siemens Si-N BC849BR SOT-23 10 BC549B

2BS Matsushita N-FET 2SK2593-S SS Mini 1,6 10

2BS Matsushita N-FET 2SK374-S SOT-23 10

2BS Matsushita N-FET 2SK663-S SOT-323 2 10

2Bs Siemens Si-N BC849BW SOT-323 2 10

2A … 2Bs

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Odpowiednik 22C Ferranti Si-P FMMTA70 SOT-23 10

2C Matsushita MOS-P-FET-e* 2SJ0536 SOT-323 2 10

2C Matsushita Si-Di MA732 SOD-323 1,7 19

2C Motorola Si-P MMBTA70 SOT-23 10

2C Samsung Si-P MMBTA70 SOT-23 10

2C Siemens Si-P SMBTA70 SOT-23 10 BC856

2C Philips Si-N BC849CW SOT-323 2 10

2C Philips Si-N BC849C SOT-23 10 BC549C

2C Siemens Si-N BC849C SOT-23 10 BC549C

2CR Philips Si-N BC849CR SOT-23 10 BC549C

2CR Siemens Si-N BC849CR SOT-23 10 BC549C

2Cs Siemens Si-N BC849CW SOT-323 2 10

2D Matsushita MOS-N-FET-e* 2SK3064 SOT-323 2 10

2D Matsushita Si-Di MA784 SOD-323 1,7 19

2D Motorola Si-P MMBTA92 SOT-23 10

2D National Si-P MMBTA92 SOT-23 10

2D Samsung Si-P KST92 SOT-23 10

2D Samsung Si-P MMBTA92 SOT-23 10

2D Siemens Si-P SMBTA92 SOT-23 10

2D Siemens Si-P SXTA92 SOT-89 11

2D Philips Si-N BC849 SOT-23 10

2D Philips Si-N BC849W SOT-323 2 10

2E Ferranti Si-P FMMTA93 SOT-23 10

2E Matsushita Si-N 2SD2457 SOT-89 11

2E Matsushita Si-Di MA785 SOD-323 1,7 19

2E Motorola Si-P MMBTA93 SOT-23 10

2E Samsung Si-P KST93 SOT-23 10

2E Samsung Si-P MMBTA93 SOT-23 10

2E Siemens Si-P SMBTA93 SOT-23 10

2E Siemens Si-P SXTA93 SOT-89 11

2ER Matsushita Si-N 2SD2457-R SOT-89 11

2ES Matsushita Si-N 2SD2457-S SOT-89 11

2F Ferranti Si-P FMMT2907A SOT-23 10

2F Matsushita Si-P 2SB1612 SOT-89 11

2F Matsushita Si-P 2SB792A SOT-23 10

2C … 2F

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Odpowiednik22F Motorola Si-P MMBT2907A SOT-23 10

2F National Si-P MMBT2907A SOT-23 10

2F Samsung Si-P KST2907A SOT-23 10

2F Samsung Si-P MMBT2907A SOT-23 10

2F Siemens Si-P SMBT2907A SOT-23 10

2F Siemens Si-P SXT2907A SOT-89 11 BCX52

2F Toshiba Si-P YTS2907A SOT-23 10

2F Philips Si-N BC850BW SOT-323 2 10

2F Philips Si-N BC850B SOT-23 10 BC550B

2F Siemens Si-N BC850B SOT-23 10 BC550B

2FL20U Shindengen Si-Di D2FL20U SOD-15 8 19

2FL40 Shindengen Si-Di D2FL40 SOD-15 8 19

2FQ Matsushita Si-P 2SB1583-Q (T Mini) ~10

2FR Matsushita Si-P 2SB1583-R (T Mini) ~10

2FR Matsushita Si-P 2SB792AR SOT-23 10

2FR Philips Si-N BC850BR SOT-23 10 BC550B

2FR Siemens Si-N BC850BR SOT-23 10 BC550B

2FS Matsushita Si-P 2SB1583-S (T Mini) ~10

2FS Matsushita Si-P 2SB792AS SOT-23 10

2Fs Siemens Si-N BC850BW SOT-323 2 10

2FS4 Shindengen Si-Di D2FS4 SOD-15 8 19

2FV20 Shindengen Si-Di D2F20 SOD-15 8 19

2FV60 Shindengen Si-Di D2F60 SOD-15 8 19

2G Ferranti Si-P FMMTA56 SOT-23 10

2G Motorola Si-P MMBTA56 SOT-23 10

2G National Si-P MMBTA56 SOT-23 10

2G Philips Si-N BC850C SOT-23 10 BC550C

2G Samsung Si-P KST56 SOT-23 10

2G Samsung Si-P MMBTA56 SOT-23 10

2G Siemens Si-N BC850C SOT-23 10 BC550C

2G Siemens Si-P SMBTA56 SOT-23 10 BCX42

2G Philips Si-N BC850CW SOT-323 2 10

2GM Motorola Si-P MMBTA56 SOT-23 10

2GR Philips Si-N BC850CR SOT-23 10 BC550C

2GR Siemens Si-N BC850CR SOT-23 10 BC550C

2F … 2GR

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Odpowiednik 22Gs Siemens Si-N BC850CW SOT-323 2 10

2GT Thomson Si-P SOA56 SOT-23 10

2H Ferranti Si-P FMMTA55 SOT-23 10

2H Matsushita Si-Di MA2ZD02 SOT-323 1,7 19

2H Motorola Si-P MMBTA55 SOT-23 10

2H Samsung Si-P KST55 SOT-23 10

2H Samsung Si-P MMBTA55 SOT-23 10

2H Siemens Si-P SMBTA55 SOT-23 10 BCW65

2H Philips Si-N BC850 SOT-23 10

2H Philips Si-N BC850W SOT-323 2 10

2HT Thomson Si-P SOA55 SOT-23 10

2I Matsushita Si-N 2SD2474 SOT-89 11

2J Motorola Si-P MMBT3640 SOT-23 10

2J National Si-P MMBT3640 SOT-23 10

2J Samsung Si-P MMBT3640 SOT-23 10

2K Matsushita Si-P 2SB1614 SOT-89 11

2K Matsushita Si-Di MA2Z748 SOD-323 1,7 19

2L Motorola Si-P MMBT5401 SOT-23 10

2L National Si-P MMBT5401 SOT-23 10

2L Samsung Si-P KST5401 SOT-23 10

2L Samsung Si-P MMBT5401 SOT-23 10

-2L Philips Si-P PMST5401 SOT-323 2 10

2M Ferranti Si-P FMMT5087 SOT-23 10

2M Matsushita MOS-N-FET-e 2SK2211 SOT-89 11

2M Motorola Si-N MMBT404 SOT-23 10

2N Matsushita Si-N-Darl 2SD1478 SOT-23 10

2N Motorola Si-P MMBT404A SOT-23 10

2N0 Zetex Si-N ZXT11N20DF SOT-23 10

2N02 Zetex MOS-N-FET-e ZXM62N02E6 SOT-163 15

2N02L Motorola MOS-N-FET-e MMFT2N02EL SOT-223 16

2N03 Zetex MOS-N-FET-e ZXM62N03E6 SOT-163 15

2NP Matsushita Si-N-Darl 2SD1478-P SOT-23 10

2NP Matsushita Si-N-Darl 2SD2434-P (T Mini) ~10

2NQ Matsushita Si-N-Darl 2SD1478-Q SOT-23 10

2NQ Matsushita Si-N-Darl 2SD2434-Q (T Mini) ~10

2Gs … 2NQ

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Odpowiednik22NR Matsushita Si-N-Darl 2SD1478-R SOT-23 10

2NR Matsushita Si-N-Darl 2SD2434-R (T Mini) ~10

2O Matsushita Si-N-Darl 2SD1478A SOT-23 10

2OP Matsushita Si-N-Darl 2SD1478A-P SOT-23 10

2OQ Matsushita Si-N-Darl 2SD1478A-Q SOT-23 10

2OR Matsushita Si-N-Darl 2SD1478A-R SOT-23 10

2P Ferranti Si-N FMMT2222R SOT-23 10

2P Motorola Si-P MMBT5086 SOT-23 10

2P National Si-P MMBT5086 SOT-23 10

2P Samsung Si-P KST5086 SOT-23 10

2P Samsung Si-P MMBT5086 SOT-23 10

2P Siemens Si-P SMBT5086 SOT-23 10 BC860

2P Siemens Si-N SXT2222A SOT-89 11 BCX55

2P02 Zetex MOS-P-FET-e ZXM62P02E6 SOT-163 15

2P03 Zetex MOS-P-FET-e ZXM62P03E6 SOT-163 15

2Q Motorola Si-P MMBT5087 SOT-23 10

2Q National Si-P MMBT5087 SOT-23 10

2Q Samsung Si-P KST5087 SOT-23 10

2Q Samsung Si-P MMBT5087 SOT-23 10

2Q Siemens Si-P SMBT5087 SOT-23 10 BC860

2R Motorola Si-P MMBT4260 SOT-23 10

2S Matsushita Si-Di MA10704 SOT-323 1,7 19

2S Motorola Si-P MMBT4261 SOT-23 10

2T Ferranti Si-N HT2 SOT-23 10

2T Motorola Si-P MMBT4403 SOT-23 10

2T National Si-P MMBT4403 SOT-23 10

2T Samsung Si-P KST4403 SOT-23 10

2T Samsung Si-P MMBT4403 SOT-23 10

2T Thomson Si-P SO4403 SOT-23 10

2T Toshiba Si-P YTS4403 SOT-23 10

2U Motorola Si-P MMBTA63 SOT-23 10

2U Samsung Si-P KST63 SOT-23 10

2U Samsung Si-P MMBTA63 SOT-23 10

2U Shindengen Si-Di D1FL20U DO-214AC 5 19

2U Siemens Si-P-Darl SMBTA63 SOT-23 10 BCV26

2NR … 2U

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Odpowiednik 22V Motorola Si-P MMBTA64 SOT-23 10

2V National Si-P MMBTA64 SOT-23 10

2V Samsung Si-P KST64 SOT-23 10

2V Samsung Si-P MMBTA64 SOT-23 10

2V Siemens Si-P-Darl SMBTA64 SOT-23 10 BCV46

2V02H Toshiba Si-Di HN2V02H MDIP-8 23

2W Ferranti Si-P FMMT3905 SOT-23 10

2W Matsushita Si-N 2SC3704 SOT-23 10

2W Matsushita Si-N 2SC3937 SOT-323 2 10

2W Motorola Si-P MMBT8599 SOT-23 10

2X Matsushita Si-N 2SC3707 SOT-23 10

2X Matsushita Si-N 2SC4410 SOT-323 2 10

2X Motorola Si-N MMBT4401 SOT-23 10

2X Motorola Si-N SO4401 SOT-23 10

2X National Si-N MMBT4401 SOT-23 10

2X Samsung Si-N KST4401 SOT-23 10

2X Samsung Si-N MMBT4401 SOT-23 10

2X Samsung Si-N SO4401 SOT-23 10

2X Thomson Si-N SO4401 SOT-23 10 BCW65

2X Toshiba Si-N YTS4401 SOT-23 10

2Y Matsushita Si-N 2SC3757 SOT-23 10

2Y Matsushita Si-N 2SC3938 SOT-323 2 10

2Y Matsushita Si-N 2SC4691 SC-75 1,6 10

2Y4 Valvo Z-Di BZV49/C2V4 SOT-89 11 BZV85C2V4

2Y7 Valvo Z-Di BZV49/C2V7 SOT-89 11 BZV85C2V7

2YQ Matsushita Si-N 2SC3757-Q SOT-23 10

2YQ Matsushita Si-N 2SC3938-Q SOT-323 2 10

2YQ Matsushita Si-N 2SC4691-Q SS Mini 1,6 10

2YQ Matsushita Si-N 2SC4969-Q (T Mini) ~10

2YR Matsushita Si-N 2SC3757-R SOT-23 10

2YR Matsushita Si-N 2SC3938-R SOT-323 2 10

2YR Matsushita Si-N 2SC4691-R SS Mini 1,6 10

2YR Matsushita Si-N 2SC4969-R (T Mini) ~10

2YS Matsushita Si-N 2SC3757-S SOT-23 10

2YS Matsushita Si-N 2SC3938-S SOT-323 2 10

2V … 2YS

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Equivalence

Odpowiednik

32YS Matsushita Si-N 2SC4691-S SS Mini 1,6 10

2Z Matsushita Si-N 2SC4417 SOT-323 2 10

2Z Motorola Si-P MMBT6520 SOT-23 10

2Z Zetex Si-Di BAS70-04 SOT-23 10

2Z5 Zetex Si-Di BAS70-05 SOT-23 10

3

3 Hitachi C-Di HSU276, 277 SOD-323 1,7 19

3 Hitachi C-Di HVC306A SOD-523 1,3 19

3 Hitachi C-Di HVE306A SOD-523 1,3 19

3 Hitachi C-Di HVU306 (A) SOD-323 1,7 19

3 Matsushita Si-Di MA2SV02 SOD-523 1,3 19

3 Matsushita Z-Di MAZS030 SOD-523 1,3 19

3 Si-Di BAS16-02W (SCD-80) 1,3 19

3.0B Hitachi Z-Di HZF3.0BP DO-214AC 5 19

3.0C Hitachi Z-Di HZF3.0CP DO-214AC 5 19

3.3B Hitachi Z-Di HZF3.3BP DO-214AC 5 19

3.3C Hitachi Z-Di HZF3.3CP DO-214AC 5 19

3.6B Hitachi Z-Di HZF3.6BP DO-214AC 5 19

3.6C Hitachi Z-Di HZF3.6CP DO-214AC 5 19

3.9B Hitachi Z-Di HZF3.9BP DO-214AC 5 19

3.9C Hitachi Z-Di HZF3.9CP DO-214AC 5 19

30 Matsushita Z-Di MAZS300 SOD-523 1,3 19

30 Toshiba Z-Di U1Z30 SOD-6 6,4 19

300PH Philips Z-Di BZD23-C300 SOD-81 9

300PH Philips Z-Di BZD27-C300 SOD-87 20

302A Hitachi Si-Di HRF302A SOD-15 8 19

30B Hitachi Z-Di HZF30BP DO-214AC 5 19

30C Hitachi Z-Di HZF30CP DO-214AC 5 19

30PH Philips Z-Di BZD23-C30 SOD-81 9

30PH Philips Z-Di BZD27-C30 SOD-87 20

30Y Valvo Z-Di BZV49/C30 SOT-89 11 BZV85C30

31D Philips Si-Di BYD31D SOD-91 9

31G Philips Si-Di BYD31G SOD-91 9

31J Philips Si-Di BYD31J SOD-91 9

2YS … 31J

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Odpowiednik

331K Philips Si-Di BYD31K SOD-91 9

31M Philips Si-Di BYD31M SOD-91 9

32 National Si-Di MMBD1403 SOT-23 10

32 Rohm Z-Di UDZ2.7B SOD-323 1,7 19

32 Siemens Si-Di BAT32 SOT-173 17

32DPH Philips Si-Di BYD32D SOD-120 9

32GPH Philips Si-Di BYD32G SOD-120 9

32JPH Philips Si-Di BYD32J SOD-120 9

33 Matsushita Z-Di MAZS330 SOT-523 1,3 19

33 National Si-Di MMBD1404 SOT-23 10

33 Toshiba Z-Di U1Z33 SOD-6 6,4 19

330PH Philips Z-Di BZD23-C330 SOD-81 9

330PH Philips Z-Di BZD27-C330 SOD-87 20

33B Hitachi Z-Di HZF33BP DO-214AC 5 19

33C Hitachi Z-Di HZF33CP DO-214AC 5 19

33DPH Philips Si-Di BYD33D SOD-81 9

33GPH Philips Si-Di BYD33G SOD-81 9

33JPH Philips Si-Di BYD33J SOD-81 9

33KPH Philips Si-Di BYD33K SOD-81 9

33MPH Philips Si-Di BYD33M SOD-81 9

33PH Philips Z-Di BZD23-C33 SOD-81 9

33PH Philips Z-Di BZD27-C33 SOD-87 20

33UPH Philips Si-Di BYD33U SOD-81 9

33VPH Philips Si-Di BYD33V SOD-81 9

33Y Valvo Z-Di BZV49/C33 SOT-89 11 BZV85C33

34 National Si-Di MMBD1405 SOT-23 10

34 NEC Si-N 2SC5007-FB SS Mini 1,6 10

34R NEC Si-N µPA812T-FB SOT-363 2 15

35 Rohm Z-Di UDZ13B SOD-323 1,7 19

35R NEC Si-N µPA812T-GB SOT-363 2 15

36 Matsushita Z-Di MAZS360 SOD-523 1,3 19

36 Toshiba Z-Di U1Z36 SOD-6 6,4 19

360PH Philips Z-Di BZD23-C360 SOD-81 9

360PH Philips Z-Di BZD27-C360 SOD-87 20

36B Hitachi Z-Di HZF36BP DO-214AC 5 19

31K … 36B

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Manufact.

Producent

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Obudowa

Dim.

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Odpowiednik

336C Hitachi Z-Di HZF36CP DO-214AC 5 19

36PH Philips Z-Di BZD23-C36 SOD-81 9

36PH Philips Z-Di BZD27-C36 SOD-87 20

36Y Valvo Z-Di BZV49/C36 SOT-89 11 BZV85C36

37DPH Philips Si-Di BYD37D SOD-87 20

37GPH Philips Si-Di BYD37G SOD-87 20

37JPH Philips Si-Di BYD37J SOD-87 20

37KPH Philips Si-Di BYD37K SOD-87 20

37MPH Philips Si-Di BYD37M SOD-87 20

39 Matsushita Z-Di MAZS390 SOD-523 1,3 19

390PH Philips Z-Di BZD23-C390 SOD-81 9

390PH Philips Z-Di BZD27-C390 SOD-87 20

39PH Philips Z-Di BZD23-C39 SOD-81 9

39PH Philips Z-Di BZD27-C39 SOD-87 20

39Y Valvo Z-Di BZV49/C39 SOT-89 11 BZV85C39

3A Matsushita Si-N 2SC5472 SOT-323 2 10

3A Matsushita Si-N 2SC5473 SOT-343 2 13

3A Matsushita Si-N 2SC5474 SC-75 1,6 10

3A Matsushita Si-St MA30-A SOD-323 1,7 19

3A Motorola Si-N MMBTH24 SOT-23 10

3A National Si-N MMBTH24 SOT-23 10

3A Philips Si-P BC856AT SC-75 1,6 10

3A Samsung Si-N KST24 SOT-23 10

3A Samsung Si-N MMBTH24 SOT-23 10

3A Philips Si-P BC856AW SOT-323 2 10

3A Philips Si-P BC856A SOT-23 10 BC556A

3A Siemens Si-P BC856A SOT-23 10 BC556A

3AG Toshiba Si-P 2SA1324-GR SOT-23 10

3AO Toshiba Si-P 2SA1324-O SOT-23 10

3AR Philips Si-P BC856AR SOT-23 10 BC556A

3AR Siemens Si-P BC856AR SOT-23 10 BC556A

3As Siemens Si-P BC856AW SOT-323 2 10

3AY Toshiba Si-P 2SA1234-Y SOT-23 10

3B Ferranti Si-N FMMT918 SOT-23 10

3B Matsushita Si-St MA30-B SOD-323 1,7 19

36C … 3B

http://www.serwis-elektroniki.com.pl/

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Code

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Manufact.

Producent

Device

Opis

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Typ

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Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

33B Motorola Si-N MMBT918 SOT-23 10

3B Philips Si-P BC856BT SC-75 1,6 10

3B Rohm Si-Di RB461F SOT-323 2 10

3B Philips Si-P BC856BW SOT-323 2 10

3B Philips Si-P BC856B SOT-23 10 BC556B

3B Siemens Si-P BC856B SOT-23 10 BC556B

3BG Toshiba Si-P 2SA1325-GR SOT-323 10

3BL Toshiba Si-P 2SA1325-BL SOT-23 10

3BP Matsushita MOS-N-FET-d 3SK139-P SOT-143 13

3BQ Matsushita MOS-N-FET-d 3SK139-Q SOT-143 13

3BR Philips Si-P BC856BR SOT-23 10 BC556B

3BR Siemens Si-P BC856BR SOT-23 10 BC556B

3Bs Siemens Si-P BC856BW SOT-23 2 10

3C Matsushita Si-St MA30W-A SOT-323 1,7 19

3C National Si-P MMBT5179 SOT-23 10

3C Rohm Si-Di RB451F SOT-23 2 10

3CO Toshiba Si-P 2SA1326-O SOT-23 10

3Cs Siemens Si-P BC857S SOT-363 2 15

3CY Toshiba Si-P 2SA1326-Y SOT-23 10

3D Matsushita MOS-N-FET-d 3SK143 SOT-143 13

3D Matsushita Si-St MA30W-B SOD-323 1,7 19

3D Motorola Si-P MMBTH81 SOT-23 10

3D National Si-P MMBTH81 SOT-23 10

3D Rohm Si-Di RB715F SOT-323 2 10

3D Philips Si-P BC856 SOT-23 10

3D Philips Si-P BC856W SOT-323 2 10

3DO Matsushita MOS-N-FET-d 3SK143-O SOT-143 13

3DP Matsushita MOS-N-FET-d 3SK143-P SOT-143 13

3DQ Matsushita MOS-N-FET-d 3SK143-Q SOT-143 13

3Ds Siemens Si-P BC856S SOT-363 2 15

3E Ferranti Si-N FMMTA42 SOT-23 10

3E Matsushita MOS-N-FET-d 3SK144 SOT-143 13

3E Motorola Si-N MMBTH10 SOT-23 10

3E National Si-N MMBTH10 SOT-23 10

3E Philips Si-P BC857AT SC-75 1,6 10

3B … 3E

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Manufact.

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Equivalence

Odpowiednik

33E Rohm Si-Di RB717F SOT-323 2 10

3E Samsung Si-N KST10 SOT-23 10

3E Samsung Si-N MMBTH10 SOT-23 10

3E Philips Si-P BC857AW SOT-323 2 10

3E Philips Si-P BC857A SOT-23 10 BC557A

3E Siemens Si-P BC857A SOT-23 10 BC557A

3EM Motorola Si-N MMBTH10 SOT-23 10

3EQ Matsushita MOS-N-FET-d 3SK144-Q SOT-143 13

3ER Matsushita MOS-N-FET-d 3SK144-R SOT-143 13

3ER Philips Si-P BC857AR SOT-23 10 BC557A

3ER Siemens Si-P BC857AR SOT-23 10 BC557A

3Es Siemens Si-P BC857AW SOT-323 2 10

3EZ Zetex Si-N FMMTH10 SOT-23 10

3F Motorola Si-N MMBT6543 SOT-23 10

3F Philips Si-P BC857BT SC-75 1,6 10

3F Rohm Si-Di RB450F SOT-323 2 10

3F Philips Si-P BC857BW SOT-323 2 10

3F Philips Si-P BC857B SOT-23 10 BC557B

3F Siemens Si-P BC857B SOT-23 10 BC557B

3FP Matsushita MOS-N-FET-d 3SK169-P SOT-143 13

3FQ Matsushita MOS-N-FET-d 3SK169-Q SOT-143 13

3FR Philips Si-P BC857BR SOT-23 10 BC557B

3FR Siemens Si-P BC857BR SOT-23 10 BC557B

3Fs Siemens Si-P BC857BW SOT-323 2 10

3Ft Philips Si-P BC857BS SOT-363 15

3G National Si-N MMBTH11 SOT-23 10

3G Philips Si-P BC857C SOT-23 10 BC557C

3G Philips Si-P BC857CT SC-75 1,6 10

3G Siemens Si-P BC857C SOT-23 10 BC557C

3G Philips Si-P BC857CW SOT-323 2 10

3GR Philips Si-P BC857CR SOT-23 10 BC557G

3GR Siemens Si-P BC857CR SOT-23 10 BC557G

3Gs Siemens Si-P BC857CW SOT-323 2 10

3H Philips Si-P BC857 SOT-23 10

3H Philips Si-P BC857W SOT-323 2 10

3E … 3H

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Manufact.

Producent

Device

Opis

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Obudowa

Dim.

Wymiary

Fig.

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Equivalence

Odpowiednik

33J Philips Si-P BC858AT SC-75 1,6 10

3J Philips Si-P BCV62A SOT-143 13

3J Rohm Si-Di RB706F-40 SOT-323 2 10

3J Siemens Si-P BCV62A SOT-143 13

3J Philips Si-P BC858AW SOT-323 2 10

3J Philips Si-P BC858A SOT-23 10 BC558A

3J Siemens Si-P BC858A SOT-23 10 BC558A

3J4 Origin Si-Di SS3J4 ~DO-27A 9

3Jp Philips Si-P BCV62A SOT-143 13

3JR Philips Si-P BC858AR SOT-23 10 BC558A

3JR Siemens Si-P BC858AR SOT-23 10 BC558A

3Js Siemens Si-P BC858AW SOT-323 2 10

3Js Siemens Si-P BCV62A SOT-143 13

3K Matsushita GaAs-FET-IC GN4002 SOT-163 15

3K Philips Si-P BC858BT SC-75 1,6 10

3K Philips Si-P BCV62B SOT-143 13

3K Siemens Si-P BCV62B SOT-143 13

3K Philips Si-P BC858BW SOT-323 2 10

3K Philips Si-P BC858B SOT-23 10 BC558B

3K Siemens Si-P BC858B SOT-23 10 BC558B

3Kp Philips Si-P BCV62B SOT-143 13

3KR Philips Si-P BC858BR SOT-23 10 BC558B

3KR Siemens Si-P BC858BR SOT-23 10 BC558B

3Ks Siemens Si-P BC858BW SOT-323 2 10

3Ks Siemens Si-P BCV62B SOT-143 13

3L National Si-N MMBTH20 SOT-23 10

3L Philips Si-P BC858CT SC-75 1,6 10

3L Philips Si-P BCV62C SOT-143 13

3L Siemens Si-P BC858C SOT-23 10 BC558C

3L Siemens Si-P BCV62C SOT-143 13

3L Philips Si-P BC858CW SOT-323 2 10

3L Philips Si-P BC858C SOT-23 10 BC558C

3L Siemens Si-P BC858C SOT-23 10

3L2U Shindengen Si-Di DE3L20U TO-251, 252 8

3L4 Shindengen Si-Di DE3L40 TO-251, 252 8

3J … 3L4

http://www.serwis-elektroniki.com.pl/

Page 311:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

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Dim.

Wymiary

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Equivalence

Odpowiednik

33LP Matsushita N-FET 2SK608-P SOT-23 10

3Lp Philips Si-P BCV62C SOT-143 13

3LQ Matsushita N-FET 2SK608-Q SOT-23 10

3LR Matsushita N-FET 2SK608-R SOT-23 10

3LR Philips Si-P BC858CR SOT-23 10 BC558C

3LR Siemens Si-P BC858CR SOT-23 10 BC558C

3LS Matsushita N-FET 2SK608-S SOT-23 10

3Ls Siemens Si-P BC858CW SOT-323 2 10

3Ls Siemens Si-P BCV62C SOT-143 13

3M Ferranti Si-P FMMT5087R SOT-23 10

3M Matsushita Si-N 2SC3829 SOT-23 10

3M Matsushita Si-N 2SC4808 SS Mini 1,6 10

3M Matsushita Si-N 2SC4835 SOT-323 2 10

3M Philips Si-P BC858 SOT-23 10

3M Philips Si-P BC858W SOT-323 2 10

3Mp Philips Si-P BCV62 SOT-143 13

3N Matsushita MOS-N-FET-e 2SK620 SOT-23 10

3N Matsushita MOS-N-FET-e 2SK664 SOT-323 2 10

3N Origin Si-Di DA3N SIP-4 (10×8×4) 22

3O Matsushita MOS-N-FET-e 2SK621 SOT-23 10

3O Matsushita MOS-N-FET-e 2SK665 SOT-323 2 10

3O Toshiba Si-N 2SC4497-O SOT-23 10

3P Ferranti Si-N FMMT2222AR SOT-23 10

3P Origin Si-Di DA3P SIP-4 (10×8×4) 22

3R National Si-P MMBT5771 SOT-23 10

3R Toshiba Si-N 2SC4497-R SOT-23 10

3RP Matsushita GaAs-N-FET-d 3SK184-P SOT-143 13

3RQ Matsushita GaAs-N-FET-d 3SK184-Q SOT-143 13

3RR Matsushita GaAs-N-FET-d 3SK184-R SOT-143 13

3RS Matsushita GaAs-N-FET-d 3SK184-S SOT-143 13

3S Matsushita Si-N 2SC3904 SOT-23 10

3S Matsushita Si-N 2SC4805 SOT-323 2 10

3S National Si-N MMBT5551 SOT-23 10

3S4 Shindengen Si-Di DE3S4M TO-251, 252 8

3S6 Shindengen Si-Di DE3S6M TO-251, 252 8

3LP … 3S6

http://www.serwis-elektroniki.com.pl/

Page 312:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Odpowiednik

4

3SS National Si-N MMBTA28 SOT-23 10

3T Ferranti Si-P HT3 SOT-23 10

3T Rohm Si-Di RB480K SOT-343 2 13

3U Matsushita Si-N 2SC3967 SOT-23 10

3U Matsushita Si-N 2SC4068 SOT-323 2 10

3U Rohm Si-Di RB481K SOT-343 2 13

3V6PH Philips Z-Di BZD23-C3V6 SOD-81 9

3V6PH Philips Z-Di BZD27-C3V6 SOD-87 20

3V9PH Philips Z-Di BZD23-C3V9 SOD-81 9

3V9PH Philips Z-Di BZD27-C3V9 SOD-87 20

3W Ferranti Si-N FMMTA12 SOT-23 10

3W Matsushita Si-N 2SD1979 SOT-323 2 10

3WS Matsushita Si-N 2SD1938-S SOT-23 10

3WS Matsushita Si-N 2SD1979-S SOT-323 2 10

3WS Matsushita Si-N 2SD2529-S (T Mini) ~10

3WT Matsushita Si-N 2SD1938-T SOT-23 10

3WT Matsushita Si-N 2SD1979-T SOT-323 2 10

3WT Matsushita Si-N 2SD2529-T (T Mini) ~10

3Y Matsushita Si-N 2SC5190 SOT-323 2 10

3Y Matsushita Si-N 2SC5363 SC-75 1,6 10

3Y0 Valvo Z-Di BZV49/C3V0 SOT-89 11 BZV85C3V0

3Y3 Valvo Z-Di BZV49/C3V3 SOT-89 11 BZV85C3V3

3Y6 Valvo Z-Di BZV49/C3V6 SOT-89 11 BZV85C3V6

3Y9 Valvo Z-Di BZV49/C3V9 SOT-89 11 BZV85C3V9

3ZP Matsushita MOS-N-FET-d 3SK193-P SOT-143 13

3ZQ Matsushita MOS-N-FET-d 3SK193-Q SOT-143 13

4

4 Hitachi C-Di HVU350 SOD-323 1,7 19

4 Matsushita Si-Di MA2SV03 SOD-523 1,3 19

4 Rohm Diode RB501V-40 SOD-323 1,7 19

4 Siemens Si-Di BAW140W SOD-323 1,7 19

4 Siemens C-Di BB664 (SCD-80) 1,3 19

4.3B Hitachi Z-Di HZF4.3BP DO-214AC 5 19

4.3C Hitachi Z-Di HZF4.3CP DO-214AC 5 19

3SS … 4.3C

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4

4.7B Hitachi Z-Di HZF4.7BP DO-214AC 5 19

4.7C Hitachi Z-Di HZF4.7CP DO-214AC 5 19

4.7W Matsushita Z-Di MA3047W SOT-143 13

40 Siemens GaAs-FET CGY40 Cerec-X 24

4001 Philips Si-Di 1N4001 SOD-87 20

4002 Philips Si-Di 1N4002 SOD-87 20

40SC3L Shindengen Si-Di DF40SC3L TO-263 8

41 Siemens Si-Di BAT14-115R

41 Siemens Si-Di BAT14-115S

4101F Toshiba Si-P TA4101F MDIP-8 23

413 Zetex Si-N FMMT413 SOT-23 10

415 Zetex Si-N FMMT415 SOT-23 10

417 Zetex Si-N FMMT417 SOT-23 10

41A Zetex Si-N FMMT491A SOT-23 10

41D Siemens Si-Di BAT14-115D

42 Philips Si-Di BAT54AW SOT-323 2 10

42 Rohm Z-Di UDZ3.0B SOD-323 1,7 19

42 Siemens Si-Di BAT14-025R

42 Siemens Si-Di BAT14-025S

42D Siemens Si-Di BAT14-025D

43 Philips Si-Di BAT54CW SOT-323 2 10

43 Siemens Si-Di BAS40 SOT-23 10

43 Siemens Si-Di BAS40 SOT-23 10

43 (X, Y, Z) KEC Z-Di U02W4.3V SOT-23 10

430PH Philips Z-Di BZD23-C430 SOD-81 9

430PH Philips Z-Di BZD27-C430 SOD-87 20

43-16PH Philips Si-Di BYD43-16 SOD-81 9

43-18PH Philips Si-Di BYD43-18 SOD-81 9

43-20PH Philips Si-Di BYD43-20 SOD-81 9

43A Hitachi Z-Di HZM4.3FA SOT-23 10

43p Philips Si-Di BAS40 SOT-23 10

43PH Philips Z-Di BZD23-C43 SOD-81 9

43PH Philips Z-Di BZD27-C43 SOD-87 20

43UPH Philips Si-Di BYD43U SOD-81 9

43VPH Philips Si-Di BYD43V SOD-81 9

4.7B … 43VPH

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Page 314:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Odpowiednik

4

43Y Valvo Z-Di BZV49/C43 SOT-89 11 BZV85C43

44 NEC Si-N 2SC5008-FB SS Mini 1,6 10

44 Philips Si-Di BAT54SW SOT-323 2 10

44 Siemens Si-Di BAS40-04 SOT-23 10

44 Siemens Si-Di BAS40-04 SOT-23 10

449 Zetex Si-N FMMT449 SOT-23 10

44p Philips Si-Di BAS40-04 SOT-23 10

44R NEC Si-N µPA811T-FB SOT-363 2 15

44s Siemens Si-Di BAS40-04W SOT-323 2 10

45 Rohm Z-Di UDZ15B SOD-323 1,7 19

45 Siemens Si-Di BAS40-05 SOT-23 10

45 Siemens Si-Di BAS40-05 SOT-23 10

45 Siemens Si-Di BAT14-055R

45 Siemens Si-Di BAT14-055S

450APH Philips Z-Di PLVA450A DO-35 9

451 Zetex Si-N FMMT451 SOT-23 10

453APH Philips Z-Di PLVA453A DO-35 9

455 Zetex Si-N FMMT455 SOT-23 10

456APH Philips Z-Di PLVA456A DO-35 9

458 Zetex Si-N FMMT458 SOT-23 10

459APH Philips Z-Di PLVA459A DO-35 9

45APH Philips Si-Di BAS45AL SOD-80C 20

45D Siemens Si-Di BAT14-055D

45p Philips Si-Di BAS40-05 SOT-23 10

45R NEC Si-N µPA811T-GB SOT-363 2 15

45s Siemens Si-Di BAS40-05W SOT-323 2 10

46 Siemens Si-Di BAS40-06 SOT-23 10

46 Siemens Si-Di BAS40-06 SOT-23 10

46 Thomson Si-Di BAT46J SOT-323 1,7 19

462APH Philips Z-Di PLVA462A DO-35 9

465APH Philips Z-Di PLVA465A DO-35 9

468APH Philips Z-Di PLVA468A DO-35 9

46p Philips Si-Di BAS40-06 SOT-23 10

46s Siemens Si-Di BAS40-06W SOT-323 2 10

47 Siemens Si-Di BAS40-07 SOT-143 13

43Y … 47

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47 Siemens Si-Di BAS40-07 SOT-143 13

47 Toshiba Z-Di U1Z47 SOD-6 6,4 19

47 (X, Y, Z) KEC Z-Di U02W4.7V SOT-23 10

470PH Philips Z-Di BZD23-C470 SOD-81 9

470PH Philips Z-Di BZD27-C470 SOD-87 20

47-16PH Philips Si-Di BYD47-16 SOD-87 20

47-20PH Philips Si-Di BYD47-20 SOD-87 20

47PH Philips Z-Di BZD23-C47 SOD-81 9

47PH Philips Z-Di BZD27-C47 SOD-87 20

47s Siemens Si-Di BAS40-07W SOT-343 2 13

47Y Valvo Z-Di BZV49/C47 SOT-89 11 BZV85C47

489 Zetex Si-N FMMT489 SOT-23 10

49 Siemens Si-Di BAT14-095R

49 Siemens Si-Di BAT14-095S

491 Zetex Si-N FMMT491 SOT-23 10

493 Zetex Si-N FMMT493 SOT-23 10

494 Zetex Si-N FMMT494 SOT-23 10

495 Zetex Si-N FMMT495 SOT-23 10

497 Zetex Si-N FMMT497 SOT-23 10

49D Siemens Si-Di BAT14-095D

49R AEG MOS-N-FET-d S849TR SOT-143R 13

4A Matsushita C-Di MA72 SOD-123 2,7 19

4A Motorola C-Di MMBV109 SOT-23 10

4A Shindengen Si-Di D1FS4A DO-214AC 5 19

4A Shindengen Si-Di D3FS4A SOD-15 8 19

4A Zetex C-Di FMMV109 SOT-23 10

4A Philips Si-P BC859AW SOT-323 2 10

4A Philips Si-P BC859A SOT-23 10 BC559A

4A Siemens Si-P BC859A SOT-23 10 BC559A

4AR Philips Si-P BC859AR SOT-23 10 BC559A

4AR Siemens Si-P BC859AR SOT-23 10 BC559A

4As Siemens Si-P BC859AW SOT-323 2 10

4B Matsushita Si-N 2SC4238 SOT-23 10

4B Matsushita Si-N 2SC4670 SOT-323 2 10

4B Matsushita C-Di MA73 SOD-123 2,7 19

47 … 4B

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4

4B Matsushita C-Di MA77 SOD-323 1,7 19

4B Motorola C-Di MMBV432 SOT-23 10

4B Philips Si-P BC859BW SOT-323 2 10

4B Philips Si-P BC859B SOT-23 10 BC559B

4B Siemens Si-P BC859B SOT-23 10 BC559B

4BR Philips Si-P BC859BR SOT-23 10 BC559B

4BR Siemens Si-P BC859BR SOT-23 10 BC559B

4Bs Siemens Si-P BC859BW SOT-323 2 10

4C Ferranti C-Di FMMD3102 SOT-23 10

4C Matsushita Si-N 2SC4239 SOT-323 2 10

4C Matsushita MOS-N-FET-d 3SK200 SOT-143 13

4C Matsushita MOS-N-FET-d 3SK269 SOT-343 2 13

4C Matsushita C-Di MA79 SOD-323 1,7 19

4C Motorola C-Di MMBV3102 SOT-23 10

4C Zetex C-Di FMMV3102 SOT-23 10

4C Philips Si-P BC859CW SOT-323 2 10

4C Philips Si-P BC859C SOT-23 10 BC559C

4C Siemens Si-P BC859C SOT-23 10 BC559C

4CR Philips Si-P BC859CR SOT-23 10 BC559C

4CR Siemens Si-P BC859CR SOT-23 10 BC559C

4Cs Siemens Si-P BC859CW SOT-323 2 10

4D Ferranti Si-Di HD3A SOT-23 10

4D Ferranti Si-Di HD3A SOT-23 10

4D Matsushita P-FET 2SJ146 SOT-23 10

4D Matsushita C-Di MA81 SOD-323 1,7 19

4D Motorola C-Di MMBV3401 SOT-23 10

4D Motorola C-Di MMSV3401 SOD-123 10

4D Philips Si-P BC859 SOT-23 10

4D Philips Si-P BC859W SOT-323 2 10

4E Ferranti Si-P FMMTA92 SOT-23 10

4E Motorola C-Di MMBV105G SOT-23 10

4E Zetex C-Di FMMV105G SOT-23 10

4E Philips Si-P BC860AW SOT-323 2 10

4E Philips Si-P BC860A SOT-23 10 BC560A

4E Siemens Si-P BC860A SOT-23 10 BC560A

4B … 4E

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4ER Philips Si-P BC860AR SOT-23 10 BC560A

4ER Siemens Si-P BC860AR SOT-23 10 BC560A

4F Matsushita Si-N 2SC4444 SOT-23 10

4F Matsushita Si-N 2SC4971 (T Mini) ~10

4F Philips Si-P BC860BW SOT-323 2 10

4F Philips Si-P BC860B SOT-23 10 BC560B

4F Siemens Si-P BC860B SOT-23 10 BC560B

4FR Philips Si-P BC860BR SOT-23 10 BC560B

4FR Siemens Si-P BC860BR SOT-23 10 BC560B

4Fs Siemens Si-P BC860BW SOT-323 2 10

4G Ferranti Si-N FMMT2484 SOT-23 10

4G Motorola C-Di MMBV2101 SOT-23 10

4G Philips Si-P BC860CW SOT-323 2 10

4G Philips Si-P BC860C SOT-23 10 BC560C

4G Siemens Si-P BC860C SOT-23 10 BC560C

4GR Philips Si-P BC860CR SOT-23 10 BC560C

4GR Siemens Si-P BC860CR SOT-23 10 BC560C

4Gs Siemens Si-P BC860CW SOT-323 2 10

4H Motorola C-Di MMBV2103 SOT-23 10

4H Philips Si-P BC860 SOT-23 10

4H Philips Si-P BC860W SOT-323 2 10

4J Motorola C-Di MMBV2109 SOT-23 10

4J Zetex Si-N-Darl FMMT38A SOT-23 10

4K Motorola C-Di MMBV2097 SOT-23 10

4L Motorola C-Di MMBV2098 SOT-23 10

4LO Matsushita N-FET 2SK1103-O SOT-23 10

4LP Matsushita N-FET 2SK1103-P SOT-23 10

4LQ Matsushita N-FET 2SK1103-Q SOT-23 10

4LR Matsushita N-FET 2SK1103-R SOT-23 10

4M Matsushita P-FET 2SJ163 SOT-23 10

4M Matsushita P-FET 2SJ364 SOT-323 2 10

4M Motorola Si-Di MMBD101 SOT-23 10

4MO Matsushita P-FET 2SJ163-O SOT-23 10

4MO Matsushita P-FET 2SJ364-O SOT-323 2 10

4MP Matsushita P-FET 2SJ163-P SOT-23 10

4ER … 4MP

http://www.serwis-elektroniki.com.pl/

Page 318:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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4

4MP Matsushita P-FET 2SJ364-P SOT-323 2 10

4MQ Matsushita P-FET 2SJ163-Q SOT-23 10

4MQ Matsushita P-FET 2SJ364-Q SOT-323 2 10

4MR Matsushita P-FET 2SJ163-R SOT-23 10

4MR Matsushita P-FET 2SJ364-R SOT-323 2 10

4MS Siemens Si-Di BAT240A SOT-23 10

4N Matsushita Si-P/N XN5601 SOT-163 15

4N Matsushita Si-P/N XP5601 SOT-363 2 15

4N Origin Si-Di DA4N SIP-5 (13×8×4) 22

4O Matsushita Si-N XN1507 SOT-153 14

4O Matsushita Si-N XP1507 SOT-353 2 14

4O Toshiba Si-P 2SA1721-O SOT-23 10

4P Matsushita Si-N/P XN1A312 SOT-153 14

4P Matsushita Si-N/P+R XP03312 SOT-353 2 14

4P Origin Si-Di DA4P SIP-5 (13×8×4) 22

4Q Matsushita Si-P/N XN1B301 SOT-153 14

4Q Matsushita Si-P/N XP1B301 SOT-353 2 14

4R Matsushita Si-P/N XN1C301 SOT-153 14

4R Matsushita Si-P/N XP1C301 SOT-353 2 14

4R Motorola C-Di MMBV3700 SOT-23 10

4R Toshiba Si-P 2SA1721-R SOT-23 10

4S Matsushita Si-P+R XN611FH SOT-163 15

4S Matsushita Si-P+R XP611FH SOT-363 2 15

4S Motorola Si-Di MMBD201 SOT-23 10

4T Matsushita N-FET 2SK1216 SOT-23 10

4T Motorola Si-Di MMBD301 SOT-23 10

4U Matsushita Si-N XN5553 SOT-163 15

4U Matsushita Si-N XP5553 SOT-363 2 15

4U Motorola C-Di MMBV2105 SOT-23 10

4V Matsushita MOS-N-FET-e 2SK1228 SOT-23 10

4V Matsushita MOS-N-FET-e 2SK1374 SOT-323 2 10

4V Motorola C-Di MMBV2106 SOT-23 10

4V3PH Philips Z-Di BZD23-C4V3 SOD-81 9

4V3PH Philips Z-Di BZD27-C4V3 SOD-87 20

4V7PH Philips Z-Di BZD23-C4V7 SOD-81 9

4MP … 4V7PH

http://www.serwis-elektroniki.com.pl/

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5

4V7PH Philips Z-Di BZD27-C4V7 SOD-87 20

4W Matsushita GaAs-FET-IC GN2011 SOT-163 15

4W Motorola C-Di MMBV2107 SOT-23 10

4X Matsushita Si-N 2SC4515 SOT-143 13

4X Motorola C-Di MMBV2108 SOT-23 10

4Y Matsushita Si-N 2SC4516 SOT-143 13

4Y Motorola C-Di MMBV2102 SOT-23 10

4Y3 Valvo Z-Di BZV49/C4V3 SOT-89 11 BZV85C4V3

4Y7 Valvo Z-Di BZV49/C4V7 SOT-89 11 BZV85C4V7

4Z Motorola C-Di MMBV2104 SOT-23 10

5

5 Hitachi C-Di 1SV202 SOD-123 2,7 19

5 Hitachi C-Di HVR300 SOD-123 2,7 19

5 Hitachi C-Di HVU202 SOD-323 1,7 19

5 Matsushita Si-Di MA2SV04 SOD-523 1,3 19

5 Matsushita Z-Di MAZS051 SOD-523 1,3 19

5 Rohm Si-Di RB751S-40 SC-79 1,3 19

5 Rohm Diode RB751V-40 SOD-323 1,7 19

5 Siemens C-Di BBY57-02W (SCD-80) 1,3 19

5.1 (X, Y, Z) KEC Z-Di U02W5.1V SOT-23 10

5.1B Hitachi Z-Di HZF5.1BP DO-214AC 5 19

5.1C Hitachi Z-Di HZF5.1CP DO-214AC 5 19

5.6B Hitachi Z-Di HZF5.6BP DO-214AC 5 19

5.6C Hitachi Z-Di HZF5.6CP DO-214AC 5 19

5.6W Matsushita Z-Di MA3056W SOT-143 13

502A Hitachi Si-Di HRF502A SOD-15 8 19

503 AEG MOS-N-FET-d S503T SOT-143 13

503A Hitachi Si-Di HRF503A SOD-15 8 19

504 AEG MOS-N-FET-d S504T SOT-143 13

505 AEG MOS-N-FET-d S505T SOT-143 13

50DPH Philips Si-Di BYG50D SOD-106 5×2,5 19

50F AEG Si-N TSDF1250R SOT-143R 13

50GPH Philips Si-Di BYG50G SOD-106 5×2,5 19

50JPH Philips Si-Di BYG50J SOD-106 5×2,5 19

4V7PH … 50JPH

http://www.serwis-elektroniki.com.pl/

Page 320:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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5

50KPH Philips Si-Di BYG50K SOD-106 5×2,5 19

50MPH Philips Si-Di BYG50M SOD-106 5×2,5 19

51 Siemens Si-Di BAT15-115B

51 Siemens Si-Di BAT15-115R

51 Siemens Si-Di BAT15-115S

51 Toshiba Z-Di U1Z51 SOD-6 6,4 19

510 Origin Z-Di F1C510 DO-214AC 5 19

510PH Philips Z-Di BZD23-C510 SOD-81 9

510PH Philips Z-Di BZD27-C510 SOD-87 20

512 Origin Z-Di F1C512 DO-214AC 5 19

516 Origin Z-Di F1C516 DO-214AC 5 19

517 Zetex Si-N FMMT6517 SOT-23 10

518 Origin Z-Di F1C518 DO-214AC 5 19

51C Origin Z-Di F1C5120 DO-214AC 5 19

51D Siemens Si-Di BAT15-115D

51PH Philips Z-Di BZD23-C51 SOD-81 9

51PH Philips Z-Di BZD27-C51 SOD-87 20

51Y Valvo Z-Di BZV49/C51 SOT-89 11 BZV85C51

52 Rohm Z-Di UDZ3.3B SOD-323 1,7 19

52 Siemens Si-Di BAT15-025B

52 Siemens Si-Di BAT15-025R

52 Siemens Si-Di BAT15-025S

520 Zetex Si-N FMMT6520 SOT-23 10

527 Origin Z-Di F1C527 DO-214AC 5 19

52D Siemens Si-Di BAT15-025D

52DPH Philips Si-Di BYD52D SOD-120 9

52GPH Philips Si-Di BYD52G SOD-120 9

52JPH Philips Si-Di BYD52J SOD-120 9

53 Siemens Si-Di BAT17 SOT-23 10

53DPH Philips Si-Di BYD53D SOD-120 9

53GPH Philips Si-Di BYD53G SOD-120 9

53JPH Philips Si-Di BYD53J SOD-120 9

53KPH Philips Si-Di BYD53K SOD-120 9

53MPH Philips Si-Di BYD53M SOD-120 9

53R AEG MOS-N-FET-d S503TR SOT-143R 13

50KPH … 53R

http://www.serwis-elektroniki.com.pl/

Page 321:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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5

53s Siemens Si-Di BAT17W SOT-323 2 10

53UPH Philips Si-Di BYD53U SOD-120 9

53VPH Philips Si-Di BYD53V SOD-120 9

54 Philips Si-Di BAT17-04 SOT-23 10

54 SGS Si-Di BAT17-04 SOT-23 10

54 Siemens Si-Di BAT17-04 SOT-23 10

540 Origin Z-Di F1C540 DO-214AC 5 19

549 Zetex Si-P FMMT549 SOT-23 10

54R AEG MOS-N-FET-d S504TR SOT-143R 13

54s Siemens Si-Di BAT17-04W SOT-323 2 10

55 Philips Si-Di BAT17-05 SOT-23 10

55 Rohm Z-Di UDZ16B SOD-323 1,7 19

55 SGS Si-Di BAT17-05 SOT-23 10

55 Siemens Si-Di BAT15-055B

55 Siemens Si-Di BAT15-055R

55 Siemens Si-Di BAT15-055S

55 Siemens Si-Di BAT17-05 SOT-23 10

550 Origin Z-Di F1C550 DO-214AC 5 19

551 Zetex Si-P FMMT551 SOT-23 10

555 Zetex Si-P FMMT555 SOT-23 10

558 Zetex Si-P FMMT558 SOT-23 10

55D Siemens Si-Di BAT15-055D

55R AEG MOS-N-FET-d S505TR SOT-143R 13

55s Siemens Si-Di BAT17-05W SOT-323 2 10

56 Philips Si-Di BAT17-06 SOT-23 10

56 SGS Si-Di BAT17-06 SOT-23 10

56 Siemens Si-Di BAT17-06 SOT-23 10

56 (X, Y, Z) KEC Z-Di U02W5.6V SOT-23 10

560 Origin Z-Di F1C560 DO-214AC 5 19

56PH Philips Z-Di BZD23-C56 SOD-81 9

56PH Philips Z-Di BZD27-C56 SOD-87 20

56s Siemens Si-Di BAT17-06W SOT-323 2 10

56Y Valvo Z-Di BZV49/C65 SOT-89 11 BZV85C56

57 Origin Z-Di F1C57 DO-214AC 5 19

57 Philips Si-Di BAT17-07 SOT-143 13

53s … 57

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5

57 SGS Si-Di BAT17-07 SOT-143 13

57 Siemens Si-Di BAT17-07 SOT-143 13

57 Siemens Si-N BFQ57 SOT-100 18

575 Origin Z-Di F1C575 DO-214AC 5 19

576 Zetex Si-P FMMT576 SOT-23 10

57DPH Philips Si-Di BYD57D SOD-87 20

57GPH Philips Si-Di BYD57G SOD-87 20

57JPH Philips Si-Di BYD57J SOD-87 20

57KPH Philips Si-Di BYD57K SOD-87 20

57MPH Philips Si-Di BYD57M SOD-87 20

57UPH Philips Si-Di BYD57U SOD-87 20

57VPH Philips Si-Di BYD57V SOD-87 20

58 Siemens Si-N BFQ58 SOT-100 18

589 Zetex Si-P FMMT589 SOT-23 10

59 Siemens Si-Di BAT15-095B

59 Siemens Si-Di BAT15-095R

59 Siemens Si-Di BAT15-095S

59 Siemens Si-N BFQ59 17

591 Zetex Si-P FMMT591 SOT-23 10

593 AEG MOS-N-FET-d S593T SOT-143 13

593 Zetex Si-P FMMT593 SOT-23 10

594 AEG MOS-N-FET-d S594T SOT-143 13

595 AEG MOS-N-FET-d S595T SOT-143 13

596 Zetex Si-P FMMT596 SOT-23 10

597 Zetex Si-P FMMT597 SOT-23 10

59A Zetex Si-P FMMT549A SOT-23 10

59D Siemens Si-Di BAT15-095D

59R AEG MOS-N-FET-d S595TR SOT-143R 13

5A Ferranti Si-Di FMMD6050 SOT-23 10

5A Matsushita GaAs-FET-IC GN1010 SOT-143 13

5A Motorola Si-Di MMBD6050 SOT-23 10

5A Philips Si-Di MMBD6050 SOT-23 10

5A Philips Si-Di PMBD6050 SOT-23 10

5A Philips Si-P BC807-16W SOT-323 2 10

5A Philips Si-P BC807-16 SOT-23 10 BC327-16

57 … 5A

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5

5A Siemens Si-P BC807-16 SOT-23 10 BC327-16

5AG Matsushita Si-P/N HN3B01F-GR SOT-163 15

5AM Motorola Si-Di MMBD6050 SOT-23 10

5AR Philips Si-P BC807-16R SOT-23 10 BC327-16

5AR Siemens Si-P BC807-16R SOT-23 10 BC327-16

5AY Matsushita Si-P/N HN3B01F-Y SOT-163 15

5AZ Zetex Si-P BC807-16 SOT-23 10

5B Matsushita Si-Di MA707 SOD-123 2,7 19

5B Matsushita Si-Di MA733 SOD-323 1,7 19

5B Motorola Si-Di MMBD6100 SOT-23 10

5B Motorola Si-N MMBT4123 SOT-23 10 BC846

5B Philips Si-Di PMBD6100 SOT-23 10

5B Samsung Si-N KST4123 SOT-23 10

5B Samsung Si-N MMBT4123 SOT-23 10 BC846

5B Philips Si-P BC807-25W SOT-323 2 10

5B Philips Si-P BC807-25 SOT-23 10 BC327-25

5B Siemens Si-P BC807-25 SOT-23 10 BC327-25

5BM Motorola Si-Di MMBD6100 SOT-23 10

5BR Philips Si-P BC807-25R SOT-23 10 BC327-25

5BR Siemens Si-P BC807-25R SOT-23 10 BC327-25

5BZ Zetex Si-P BC807-25 SOT-23 10

5C Matsushita Si-N/P XN4601 SOT-163 15

5C Matsushita Si-N/P XP4601 SOT-363 2 15

5C Motorola Si-Di MMBD7000 SOT-23 10

5C National Si-Di MMBD7000 SOT-23 10

5C Philips Si-Di PMBD7000 SOT-23 10

5C Philips Si-P BC807-40W SOT-323 2 10

5C Philips Si-P BC807-40 SOT-23 10 BC327-40

5C Siemens Si-P BC807-40 SOT-23 10 BC327-40

5CR Philips Si-P BC807-40R SOT-23 10 BC327-40

5CR Siemens Si-P BC807-40R SOT-23 10 BC327-40

5CZ Zetex Si-P BC807-40 SOT-23 10

5D Ferranti Si-Di FMMD914 SOT-23 10

5D Ferranti Si-Di HD2A SOT-23 10

5D Motorola Si-Di MMBD914 SOT-23 10

5A … 5D

http://www.serwis-elektroniki.com.pl/

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Manufact.

Producent

Device

Opis

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5

5D Motorola Si-Di MMSD914 SOD-123 2,7 19

5D Philips Si-Di PMBD914 SOT-23 10

5D Philips Si-P BC807 SOT-23 10

5D Philips Si-P BC807W SOT-323 2 10

5DZ Zetex Si-P BC807 SOT-23 10

5E Ferranti Si-N FMMTA43R SOT-23 10

5E Matsushita Si-N/P XN4608 SOT-163 15

5E Toshiba Si-P YTS2906 SOT-23 10

5E Philips Si-P BC808-16W SOT-323 2 10

5E Philips Si-P BC808-16 SOT-23 10 BC328-16

5E Siemens Si-P BC808-16 SOT-23 10 BC328-16

5ER Philips Si-P BC808-16R SOT-23 10 BC328-16

5ER Siemens Si-P BC808-16R SOT-23 10 BC328-16

5EZ Zetex Si-P BC808-16 SOT-23 10

5F Matsushita Si-N/P XN4609 SOT-163 15

5F Motorola Si-Di MMBD501 SOT-23 10

5F Rohm PIN-Di RN739F SOT-323 2 10

5F Toshiba Si-P YTS2906A SOT-23 10

5F Philips Si-P BC808-25W SOT-323 2 10

5F Philips Si-P BC808-25 SOT-23 10 BC328-25

5F Siemens Si-P BC808-25 SOT-23 10 BC328-25

5FR Philips Si-P BC808-25R SOT-23 10 BC328-25

5FR Siemens Si-P BC808-25R SOT-23 10 BC328-25

5FZ Zetex Si-P BC808-25 SOT-23 10

5G Motorola Si-Di MMBD352 SOT-23 10

5G Philips Si-P BC808-40W SOT-323 2 10

5G Philips Si-P BC808-40 SOT-23 10

5G Siemens Si-P BC808-40 SOT-23 10

5GR Philips Si-P BC808-40R SOT-23 10 BC328-40

5GR Siemens Si-P BC808-40R SOT-23 10 BC328-40

5GZ Zetex Si-P BC808-40 SOT-23 10

5H Matsushita Si-N XN4501 SOT-163 15

5H Matsushita Si-N XP4501 SOT-363 2 15

5H Motorola Si-Di MMBD701 SOT-23 10

5H National Si-Di MMBD4148 SOT-23 10

5D … 5H

http://www.serwis-elektroniki.com.pl/

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Code

Kod

Manufact.

Producent

Device

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Dim.

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Odpowiednik

5

5H Philips Si-P BC808-40 SOT-23 10 BC328-40

5H Siemens Si-P BC808-40 SOT-23 10 BC328-40

5H Philips Si-P BC808 SOT-23 10

5H Philips Si-P BC808W SOT-323 2 10

5HZ Zetex Si-P BC808 SOT-23 10

5I Matsushita Si-N/P XN4601 SOT-163 15

5I Toshiba Si-P YTS4402 SOT-23 10

5J Zetex Si-N-Darl FMMT38B SOT-23 10

5K Matsushita Si-P XN4401 SOT-163 15

5K Matsushita Si-P XP4401 SOT-363 2 15

5K Motorola C-Di MMBV809 SOT-23 10

5L Matsushita Si-N XN5501 SOT-163 15

5L Matsushita Si-N XP5501 SOT-363 2 15

5L Motorola C-Di MMBV609 SOT-23 10

5L6 Shindengen Si-Di DE5L60 TO-252 8

5LC2U Shindengen Si-Di DE5LC20U TO-251, 252 8

5LC4 Shindengen Si-Di DE5LC40 TO-251, 252 8

5M ITT Si-P IMBT3905 SOT-23 10

5M Matsushita Si-N XN5531 SOT-163 15

5M Matsushita Si-N XP05531 SOT-363 2 15

5M Toshiba Si-P YTS3905 SOT-23 10

5N ITT Si-P IMBT3906 SOT-23 10

5N Matsushita Si-N XN6501 SOT-163 15

5N Matsushita Si-N XP6501 SOT-363 2 15

5N Toshiba Si-P YTS4126 SOT-23 10

5O Matsushita Si-P XN6401 SOT-163 15

5O Matsushita Si-P XP6401 SOT-363 2 15

5P Ferranti Si-P FMMT2907AR SOT-23 10

5P Matsushita C-Di MA344 SOT-163 15

5Q Matsushita Si-N XN4502 SOT-163 15

5R Matsushita Si-N XN1501 SOT-153 14

5R Matsushita Si-N XP1501 SOT-353 2 14

5R Motorola Thy MMBS5060 SOT-23 10

5S Matsushita Si-N XN1504 SOT-153 14

5S Matsushita Si-N XP1504 SOT-353 2 14

5H … 5S

http://www.serwis-elektroniki.com.pl/

Page 326:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

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Fig.

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Odpowiednik

6

5S Matsushita Si-N XP1E554 SOT-353 2 14

5S Motorola Thy MMBS5061 SOT-23 10

5S4 Shindengen Si-Di DE5S4M TO-251, 252 8

5S6 Shindengen Si-Di DE5S6M TO-251, 252 8

5SC4 Shindengen Si-Di DE5SC4M TO-251, 252 8

5SC6 Shindengen Si-Di DE5SC6M TO-251, 252 8

5T Ferranti Si-N BCW66RG SOT-23 10

5T Matsushita N-FET XN1871 SOT-153 14

5T Motorola Thy MMBS5062 SOT-23 10

5U Matsushita MOS-N-FET-e XN1872 SOT-153 14

5V Matsushita Si-P XN1401 SOT-153 14

5V Matsushita Si-P XP1401 SOT-353 2 14

5V1P Philips Z-Di BZD23-C5V1 SOD-81 9

5V1P Philips Z-Di BZD27-C5V1 SOD-87 20

5V6P Philips Z-Di BZD23-C5V6 SOD-81 9

5V6P Philips Z-Di BZD27-C5V6 SOD-87 20

5W Matsushita Si-N XN2501 SOT-153 14

5W Matsushita Si-N XP2501 SOT-353 2 14

5X Matsushita Si-N XN4504 SOT-163 15

5Y Matsushita Si-N XN4503 SOT-163 15

5Y1 Valvo Z-Di BZV49/C5V1 SOT-89 11 BZV85C5V1

5Y6 Valvo Z-Di BZV49/C5V6 SOT-89 11 BZV85C5V6

5Z Matsushita Si-N+R XN6542 SOT-163 15

5Z Motorola PUT MMBPU131 SOT-23 10

6

6 Hitachi C-Di HVC351 SOD-523 1,3 19

6 Hitachi C-Di HVE351 SOD-523 1,3 19

6 Hitachi C-Di HVU351 SOD-323 1,7 19

6 Matsushita Z-Di MAZS062 SOD-523 1,3 19

6 Siemens C-Di BBY56-02W (SCD-80) 1,3 19

6.2A Matsushita Z-Di MA3062WA SOT-23 10

6.2A Matsushita Z-Di MAZK062D SOT-153 14

6.2B Hitachi Z-Di HZF6.2BP DO-214AC 5 19

6.2C Hitachi Z-Di HZF6.2CP DO-214AC 5 19

5S … 6.2C

http://www.serwis-elektroniki.com.pl/

Page 327:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

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Type

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Odpowiednik

6

6.2C Matsushita Z-Di MAZC062D SOT-23 10

6.2C Matsushita Z-Di MAZE062D SOT-323 2 10

6.2D Matsushita Z-Di MAZL062D SOT-153 14

6.2W Matsushita Z-Di MA3062WA SOT-143 13

6.8A Matsushita Z-Di MAZK068D SOT-153 14

6.8B Hitachi Z-Di HZF6.8BP DO-214AC 5 19

6.8C Hitachi Z-Di HZF6.8CP DO-214AC 5 19

6.8D Matsushita Z-Di MAZL068D SOT-153 14

60 Siemens PIN-Di BAR60 SOT-143 13

60 Siemens Si-N BFQ60 SOT-100 18

60DPH Philips Si-Di BYG60D SOD-106 5×2,5 19

60GPH Philips Si-Di BYG60G SOD-106 5×2,5 19

60JPH Philips Si-Di BYG60J SOD-106 5×2,5 19

60KPH Philips Si-Di BYG60K SOD-106 5×2,5 19

60MPH Philips Si-Di BYG60M SOD-106 5×2,5 19

61 Siemens PIN-Di BAR61 SOT-143 13

613 Philips Si-Di 1PS70SB40 SC-70 2 10

614 Philips Si-Di 1PS70SB44 SC-70 2 10

614 Zetex Si-N-Darl FMMT614 SOT-23 10

615 Philips Si-Di 1PS70SB45 SC-70 2 10

616 Philips Si-Di 1PS70SB46 SC-70 2 10

617 Zetex Si-N FMMT617 SOT-23 10

618 Zetex Si-N FMMT618 SOT-23 10

619 Zetex Si-N FMMT619 SOT-23 10

61A National N-FET MMBF4117 SOT-23 10

61C National N-FET MMBF4118 SOT-23 10

61E National N-FET MMBF4119 SOT-23 10

61S National N-FET MMBF5458 SOT-23 10

61U National N-FET MMBF5461 SOT-23 10

62 Rohm Z-Di UDZ3.6B SOD-323 1,7 19

62 Siemens Si-Di BAT62 SOT-143 13

62 (X, Y, Z) KEC Z-Di U02W6.2V SOT-23 10

624 Zetex Si-N FMMT624 SOT-23 10

625 Zetex Si-N FMMT625 SOT-23 10

627 Zetex Si-P-Darl BST62-70 SOT-89 11

6.2C … 627

http://www.serwis-elektroniki.com.pl/

Page 328:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

Producent

Device

Opis

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Dim.

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Equivalence

Odpowiednik

6

62P National N-FET MMBFJ201 SOT-23 10

62PH Philips Z-Di BZD23-C62 SOD-81 9

62PH Philips Z-Di BZD27-C62 SOD-87 20

62Q National N-FET MMBFJ202 SOT-23 10

62s Siemens Si-Di BAT62-07W SOT-343 2 13

62W National N-FET MMBFJ211 SOT-23 10

62X National N-FET MMBFJ212 SOT-23 10

62Y Valvo Z-Di BZV49/C62 SOT-89 11 BZV85C62

62Z Hitachi Z-Di HZM6.2ZWA SOT-23 10

63 Philips Si-Di BAS40W SOT-323 2 10

63 Siemens Si-Di BAT63 SOT-143 13

63 Siemens Si-Di BAT64 SOT-23 10

63 Siemens Si-Di BAT64 SOT-23 10 BAT54

63PH Philips Si-Di BYD63 SOD-81 9

63s Siemens Si-Di BAT64W SOT-323 2 10

64 Philips Si-Di BAS40-04W SOT-323 2 10

64 Siemens Si-Di BAT64-04 SOT-23 10

64 Siemens Si-Di BAT64-04 SOT-23 10 BAT54A

645 Siemens Si-N BFQ645 SOT-173 17 2SC3587

64s Siemens Si-Di BAT64-04W SOT-323 2 10

65 Philips Si-Di BAT64-05W SOT-323 2 10

65 Rohm Z-Di UDZ18B SOD-323 1,7 19

65 Siemens Si-Di BAT64-05 SOT-23 10

65 Siemens Si-Di BAT64-05 SOT-23 10 BAT54C

65s Siemens Si-Di BAT64-05W SOT-323 2 10

66 Philips Si-Di BAS40-06W SOT-323 2 10

66 Siemens Si-Di BAT64-06 SOT-23 10

66 Siemens Si-Di BAT64-06 SOT-23 10 BAT54S

6666 Philips Si-Di BYD67 SOD-87 20

66s Siemens Si-Di BAT64-06W SOT-323 2 10

67 AEG Si-N BFP67 SOT-143 13

67 Siemens Si-Di BAT64-07 SOT-143 13

67 Siemens Si-Di BAT64-07 SOT-143 13

67s Siemens Si-Di BAT64-07W SOT-343 2 13

68 (X, Y, Z) KEC Z-Di U02W6.8V SOT-23 10

62P … 68

http://www.serwis-elektroniki.com.pl/

Page 329:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

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Dim.

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Fig.

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Odpowiednik

6

68A Hitachi Z-Di HZM6.8FA SOT-23 10

68A Hitachi Z-Di HZM6.8WA SOT-23 10

68PH Philips Z-Di BZD23-C68 SOD-81 9

68PH Philips Z-Di BZD27-C68 SOD-87 20

68Y Valvo Z-Di BZV49/C68 SOT-89 11 BZV85C68

6A Matsushita C-Di MA321 SOD-123 2,7 19

6A Matsushita C-Di MA360 SOD-323 1,7 19

6A Matsushita Si-P+R UN2111 SOT-23 10

6A Matsushita Si-P+R UN5111 SOT-323 2 10

6A Matsushita Si-P UN601 MDIP-6 23

6A Matsushita Si-P+R UN9111 SS Mini 1,6 10

6A Motorola N-FET MMBF4416 SOT-23 10

6A Motorola Si-P+R MUN2111 SOT-23 10

6A Motorola Si-P+R MUN5111 SOT-323 2 10

6A Rohm Z-Di UMZ6.8N SOT-323 2 10

6A Philips Si-N BC817-16W SOT-323 2 10

6A Philips Si-N BC817-16 SOT-23 10 BC337-16

6A Siemens Si-N BC817-16 SOT-23 10 BC337-16

6AR Philips Si-N BC817-16R SOT-23 10 BC337-16

6AR Siemens Si-N BC817-16R SOT-23 10 BC337-16

6AZ Zetex Si-N BC817-16 SOT-23 10

6B Matsushita C-Di MA329 SOD-123 2,7 19

6B Matsushita C-Di MA361 SOD-323 1,7 19

6B Matsushita Si-P+R UN2112 SOT-23 10

6B Matsushita Si-P+R UN5112 SOT-323 2 10

6B Matsushita Si-P+R UN9112 SS Mini 1,6 10

6B Motorola N-FET MMBF5484 SOT-23 10

6B Motorola Si-P+R MUN2112 SOT-23 10

6B Motorola Si-P+R MUN5112 SOT-323 2 10

6B National N-FET MMBF5484 SOT-23 10

6B Rohm Z-Di STZ6.2N SOT-23 10

6B Philips Si-N BC817-25W SOT-323 2 10

6B Philips Si-N BC817-25 SOT-23 10 BC337-25

6B Siemens Si-N BC817-25 SOT-23 10 BC337-25

6BR Philips Si-N BC817-25R SOT-23 10 BC337-25

68A … 6BR

http://www.serwis-elektroniki.com.pl/

Page 330:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

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Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

6

6BR Siemens Si-N BC817-25R SOT-23 10 BC337-25

6BZ Zetex Si-N BC817-25 SOT-23 10

6C Matsushita C-Di MA333 SOD-123 2,7 19

6C Matsushita Si-P+R UN2113 SOT-23 10

6C Matsushita Si-P+R UN5113 SOT-323 2 10

6C Matsushita Si-P+R UN9113 SS Mini 1,6 10

6C Motorola N-FET MMBFU310 SOT-23 10

6C Motorola Si-P+R MUN2113 SOT-23 10

6C Motorola Si-P+R MUN5113 SOT-323 2 10

6C Rohm Z-Di EMZ6.8N SC-75 1,6 10

6C Rohm Z-Di STZ6.8N SOT-23 10

6C Philips Si-N BC817-40W SOT-323 2 10

6C Philips Si-N BC817-40 SOT-23 10 BC337-40

6C Siemens Si-N BC817-40 SOT-23 10 BC337-40

6CR Philips Si-N BC817-40R SOT-23 10 BC337-40

6CR Siemens Si-N BC817-40R SOT-23 10 BC337-40

6CU Si-N BC817-40 SOT-23 10

6CZ Zetex Si-N BC817-40 SOT-23 10

6D Matsushita C-Di MA334 SOD-123 2,7 19

6D Matsushita C-Di MA363 SOD-323 1,7 19

6D Matsushita Si-P+R UN2114 SOT-23 10

6D Matsushita Si-P+R UN5114 SOT-323 2 10

6D Matsushita Si-P+R UN9114 SS Mini 1,6 10

6D Motorola N-FET MMBF5457 SOT-23 10

6D Motorola Si-P+R MUN2114 SOT-23 10

6D Motorola Si-P+R MUN5114 SOT-323 2 10

6D National N-FET MMBF5457 SOT-23 10

6D Philips Si-P BC817 SOT-23 10

6D Philips Si-P BC817W SOT-323 2 10

6DZ Zetex Si-N BC817 SOT-23 10

6E Ferranti Si-P FMMTA93R SOT-23 10

6E Matsushita C-Di MA335 SOD-123 2,7 19

6E Matsushita C-Di MA364 SOD-323 1,7 19

6E Matsushita Si-P+R UN2115 SOT-23 10

6E Matsushita Si-P+R UN5115 SOT-323 2 10

6BR … 6E

http://www.serwis-elektroniki.com.pl/

Page 331:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

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Odpowiednik

6

6E Matsushita Si-P+R UN9115 SS Mini 1,6 10

6E Motorola P-FET MMBF5460 SOT-23 10

6E Motorola Si-P+R MUN2115 SOT-23 10

6E Motorola Si-P+R MUN5115 SOT-323 2 10

6E National P-FET MMBF5460 SOT-23 10

6E Philips Si-N BC818-16W SOT-323 2 10

6E Philips Si-N BC818-16 SOT-23 10 BC338-16

6E Siemens Si-N BC818-16 SOT-23 10 BC338-16

6ER Philips Si-N BC818-16R SOT-23 10 BC338-16

6ER Siemens Si-N BC818-16R SOT-23 10 BC338-16

6EZ Zetex Si-N BC818-16 SOT-23 10

6F Matsushita C-Di MA337 SOD-123 2,7 19

6F Matsushita C-Di MA365 SOD-323 1,7 19

6F Matsushita Si-P+R UN2116 SOT-23 10

6F Matsushita Si-P+R UN5116 SOT-323 2 10

6F Matsushita Si-P+R UN9116 SS-Mini 1,6 10

6F Motorola N-FET MMBF4860 SOT-23 10

6F Motorola Si-P+R MUN2116 SOT-23 10

6F Motorola Si-P+R MUN5116 SOT-323 2 10

6F Rohm Z-Di STZ5.6N SOT-23 10

6F Philips Si-N BC818-25W SOT-323 2 10

6F Philips Si-N BC818-25 SOT-23 10 BC338-25

6F Siemens Si-N BC818-25 SOT-23 10 BC338-25

6FR Philips Si-N BC818-25R SOT-23 10 BC338-25

6FR Siemens Si-N BC818-25R SOT-23 10 BC338-25

6FZ Zetex Si-N BC818-25 SOT-23 10

6G Motorola N-FET MMBF4393 SOT-23 10

6G Motorola Si-P+R MUN2130 SOT-23 10

6G Motorola Si-P+R MUN5130 SOT-323 2 10

6G Motorola N-FET PMBF4393 SOT-23 10

6G Philips Si-N BC818-25 SOT-23 10 BC338-25

6G Philips N-FET PMBF4393 SOT-23 10

6G Siemens Si-N BC818-25 SOT-23 10 BC338-25

6G Zetex C-Di FMMV2103 SOT-23 10

6G Philips Si-N BC818-40W SOT-323 2 10

6E … 6G

http://www.serwis-elektroniki.com.pl/

Page 332:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

6

6G Philips Si-N BC818-40 SOT-23 10

6G Siemens Si-N BC818-40 SOT-23 10

6GR Philips Si-N BC818-40R SOT-23 10 2SC3325

6GR Siemens Si-N BC818-40R SOT-23 10 2SC3325

6GZ Zetex Si-N BC818-40 SOT-23 10

6H Matsushita C-Di MA338 SOD-123 2,7 19

6H Matsushita C-Di MA366 SOD-323 1,7 19

6H Matsushita Si-P+R UN2117 SOT-23 10

6H Matsushita Si-P+R UN5117 SOT-323 2 10

6H Matsushita Si-P+R UN9117 SS Mini 1,6 10

6H Motorola N-FET MMBF5486 SOT-23 10

6H Motorola Si-P+R MUN2131 SOT-23 10

6H Motorola Si-P+R MUN5131 SOT-323 2 10

6H National N-FET MMBF5486 SOT-23 10

6H Philips Si-N BC818-40 SOT-23 10 2SC3325

6H Siemens Si-N BC818-40 SOT-23 10 2SC3325

6H Zetex C-Di FMMV2104 SOT-23 10

6H Philips Si-N BC818 SOT-23 10

6H Philips Si-N BC818W SOT-323 2 10

6HZ Zetex Si-N BC818 SOT-23 10

6I Matsushita Si-P+R UN2118 SOT-23 10

6I Matsushita Si-P+R UN5118 SOT-323 2 10

6I Matsushita Si-P+R UN9118 SS Mini 1,6 10

6J Motorola N-FET MMBF4391 SOT-23 10

6J Motorola Si-P+R MUN2132 SOT-23 10

6J Motorola Si-P+R MUN5132 SOT-323 2 10

6J Motorola N-FET PMBF4391 SOT-23 10

6J Philips N-FET PMBF4391 SOT-23 10

6J Zetex C-Di FMMV2105 SOT-23 10

6K Matsushita C-Di MA341 SOD-123 2,7 19

6K Matsushita C-Di MA367 SOD-323 1,7 19

6K Matsushita Si-P+R UN2119 SOT-23 10

6K Matsushita Si-P+R UN5119 SOT-323 2 10

6K Matsushita Si-P+R UN9119 SS Mini 1,6 10

6K Motorola N-FET MMBF4392 SOT-23 10

6G … 6K

http://www.serwis-elektroniki.com.pl/

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Code

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Manufact.

Producent

Device

Opis

Type

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Case

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Dim.

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Odpowiednik

6

6K Motorola Si-P+R MUN2133 SOT-23 10

6K Motorola Si-P+R MUN5133 SOT-323 2 10

6K Motorola N-FET PMBF4392 SOT-23 10

6K Philips N-FET PMBF4392 SOT-23 10

6L Matsushita C-Di MA368 SOD-323 1,7 19

6L Matsushita Si-P+R UN2110 SOT-23 10

6L Matsushita Si-P+R UN5110 SOT-323 2 10

6L Matsushita Si-P+R UN9110 SS Mini 1,6 10

6L Motorola N-FET MMBF5459 SOT-23 10

6L Motorola Si-P+R MUN2134 SOT-23 10

6L Motorola Si-P+R MUN5134 SOT-323 2 10

6L National N-FET MMBF5459 SOT-23 10

6L Zetex C-Di FMMV2107 SOT-23 10

6M Matsushita Si-P+R UN211D SOT-23 10

6M Matsushita Si-P+R UN511D SOT-323 2 10

6M Matsushita Si-P+R UN911D SS Mini 1,6 10

6M National N-FET MMBF5485 SOT-23 10

6M Zetex C-Di FMMV2108 SOT-23 10

6N Matsushita C-Di MA339 SOD-123 2,7 19

6N Matsushita C-Di MA372 SOD-323 1,7 19

6N Matsushita Si-P+R UN211E SOT-23 10

6N Matsushita Si-P+R UN511E SOT-323 2 10

6N Matsushita Si-P+R UN911E SS Mini 1,6 10

6N Zetex C-Di FMMV2109 SOT-23 10

6NC Origin Si-Di DA6NC SIP-7 (18×8×4) 22

6O Matsushita Si-P+R UN211F SOT-23 10

6O Matsushita Si-P+R UN511F SOT-323 2 10

6O Matsushita Si-P+R UN911F SS Mini 1,6 10

6P Ferranti Si-P BCX71RH SOT-23 10

6P Matsushita Si-P+R UN211H SOT-23 10

6P Matsushita Si-P+R UN511H SOT-323 2 10

6P Matsushita Si-P+R UN911H SS Mini 1,6 10

6P National N-FET MMBFJ111 SOT-23 10

6PC Origin Si-Di DA6PC SIP-7 (18×8×4) 22

6Q Matsushita Si-P+R UN211L SOT-23 10

6K … 6Q

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Manufact.

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6

6Q Matsushita Si-P+R UN511L SOT-323 2 10

6Q Matsushita Si-P+R UN911L SS Mini 1,6 10

6R Matsushita Si-P+R XN4112 SOT-163 15

6R Matsushita Si-P+R XP4112 SOT-363 2 15

6R National N-FET MMBFJ112 SOT-23 10

6R Rohm Z-Di UMZ8.2T SOT-323 2 10

6R Zetex C-Di FMMV2101 SOT-23 10

6S Matsushita C-Di MA353 SOD-123 2,7 19

6S Matsushita C-Di MA371 SOD-323 1,7 19

6S Matsushita Si-P+R UN5101 SOT-323 2 10

6S Matsushita Si-P+R XN4113 SOT-163 15

6S Matsushita Si-P+R XP4113 SOT-363 2 15

6S National N-FET MMBFJ113 SOT-23 10

6T Ferranti Si-P BCW68RG SOT-23 10

6T Matsushita C-Di MA331 SOD-323 1,7 19

6T Matsushita Si-P+R XN4115 SOT-163 15

6T Matsushita Si-P+R XP4115 SOT-363 2 15

6T Motorola N-FET MMBFJ310 SOT-23 10

6T National N-FET MMBFJ310 SOT-23 10

6U Matsushita C-Di MA332 SOD-323 1,7 19

6U Matsushita Si-P+R XN4116 SOT-163 15

6U Matsushita Si-P+R XP4116 SOT-363 2 15

6U Motorola N-FET MMBFJ309 SOT-23 10

6U National N-FET MMBFJ309 SOT-23 10

6V Matsushita Si-P+R XN6112 SOT-163 15

6V Matsushita Si-P+R XP6112 SOT-363 2 15

6V Rohm Z-Di UMZ12N SOT-323 2 10

6V2PH Philips Z-Di BZD23-C6V2 SOD-81 9

6V2PH Philips Z-Di BZD27-C6V2 SOD-87 20

6V8PH Philips Z-Di BZD23-C6V8 SOD-81 9

6V8PH Philips Z-Di BZD27-C6V8 SOD-87 20

6W Matsushita Si-P+R XN6113 SOT-163 15

6W Matsushita Si-P+R XP6113 SOT-363 2 15

6W National P-FET MMBFJ175 SOT-23 10

6X Matsushita Si-P+R UNR911AJ SC-81 1,6 10

6Q … 6X

http://www.serwis-elektroniki.com.pl/

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Code

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7

6X Matsushita Si-P+R XN6115 SOT-163 15

6X Matsushita Si-P+R XP6115 SOT-363 2 15

6X National P-FET MMBFJ176 SOT-23 10

6Y Matsushita C-Di MA355 SOD-323 1,7 19

6Y Matsushita Si-P+R UNR911BJ SC-81 1,6 10

6Y Matsushita Si-P+R XN6116 SOT-163 15

6Y Matsushita Si-P+R XP6116 SOT-363 2 15

6Y National P-FET MMBFJ177 SOT-23 10

6Y2 Valvo Z-Di BZV49/C6V2 SOT-89 11 BZV85C6V2

6Y8 Valvo Z-Di BZV49/C6V8 SOT-89 11 BZV85C6V8

6Z Matsushita C-Di MA373 SOD-323 1,7 19

6Z Matsushita Si-P+R UNR911CJ SC-81 1,6 10

6Z Matsushita Si-P+R XN6111 SOT-163 15

6Z Matsushita Si-P+R XP6111 SOT-363 2 15

6Z Motorola N-FET MMBF170 SOT-23 10

7

7 Hitachi C-Di HVU307 SOD-323 1,7 19

7 Matsushita Z-Di MAZS075 SOD-523 1,3 19

7 Siemens Si-Di BAW170W SOD-323 1,7 19

7 Siemens C-Di BBY55-02W (SCD-80) 1,3 19

7.5A Matsushita Z-Di MA3075WA SOT-23 10

7.5B Hitachi Z-Di HZF7.5BP DO-214AC 5 19

7.5C Hitachi Z-Di HZF7.5CP DO-214AC 5 19

7.5K Matsushita Z-Di MA3075WK SOT-23 10

7.5W Matsushita Z-Di MA3075T SOT-143 13

70 Siemens Si-N BFQ70 SOT-173 17 BFT97

702 Philips MOS-N-FET-e 2N7002 SOT-23 10

702 Zetex MOS-N-FET-e 2N7002 SOT-23 10

70DPH Philips Si-Di BYG70D SOD-106 5×2,5 19

70GPH Philips Si-Di BYG70G SOD-106 5×2,5 19

70JPH Philips Si-Di BYG70J SOD-106 5×2,5 19

71 Siemens Si-N BFQ71 SOT-173 17 BFQ69

717 Zetex Si-N FMMT717 SOT-23 10

718 Zetex Si-N FMMT718 SOT-23 10

6X … 718

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Page 336:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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7

71A Philips Si-Di BYD71A SOD-91 9

71B Philips Si-Di BYD71B SOD-91 9

71C Philips Si-Di BYD71C SOD-91 9

71D Philips Si-Di BYD71D SOD-91 9

71E Philips Si-Di BYD71E SOD-91 9

71F Philips Si-Di BYD71F SOD-91 9

71G Philips Si-Di BYD71G SOD-91 9

72 Rohm Z-Di UDZ3.9B SOD-323 1,7 19

72 Siemens Si-N BFQ72 SOT-173 17 BFP96

72 Siliconix MOS-N-FET-e 2N7002: SOT-23 10

720 Zetex Si-N FMMT720 SOT-23 10

722 Zetex Si-N FMMT722 SOT-23 10

723 Zetex Si-N FMMT723 SOT-23 10

72APH Philips Si-Di BYD72A SOD-120 9

72BPH Philips Si-Di BYD72B SOD-120 9

72CPH Philips Si-Di BYD72C SOD-120 9

72DPH Philips Si-Di BYD72D SOD-120 9

72EPH Philips Si-Di BYD72E SOD-120 9

72FPH Philips Si-Di BYD72F SOD-120 9

72GPH Philips Si-Di BYD72G SOD-120 9

73 NEC Si-N 2SC5005-FB SS Mini 1,6 10

73 Philips Si-Di BAS70 SOT-23 10

73 Philips Si-Di BAS70 SOT-23 10

73 SGS Si-Di BAS70 SOT-23 10

73 Siemens Si-Di BAS70 SOT-23 10

73 Siemens Si-Di BAS70 SOT-23 10

73 Siemens Si-N BFQ73 SOT-173 17

73- Philips Si-Di BAS70W SOT-323 2 10

73APH Philips Si-Di BYD73A SOD-81 9

73BPH Philips Si-Di BYD73B SOD-81 9

73CPH Philips Si-Di BYD73C SOD-81 9

73DPH Philips Si-Di BYD73D SOD-81 9

73EPH Philips Si-Di BYD73E SOD-81 9

73FPH Philips Si-Di BYD73F SOD-81 9

73GPH Philips Si-Di BYD73G SOD-81 9

71A … 73GPH

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7

73S Siemens Si-N BFQ73 SOT-173 17

73S Siemens Si-N BFQ73S SOT-173 17 BFG96

73T NEC Si-N µPA813T-FB SOT-363 2 15

74 Philips Si-Di BAS70-04 SOT-23 10

74 Philips Si-Di BAS70-04 SOT-23 10

74 SGS Si-Di BAS70-04 SOT-23 10

74 Siemens Si-Di BAS70-04 SOT-23 10

74 Siemens Si-Di BAS70-04 SOT-23 10

74 Siemens Si-N BFQ74 SOT-173 17 BFG65

74- Philips Si-Di BAS70-04W SOT-323 2 10

74s Siemens Si-Di BAS70-04S SOT-363 2 15

74s Siemens Si-Di BAS70-04W SOT-323 2 10

74T NEC Si-N µPA813T-GB SOT-363 2 15

75 Philips Si-Di BAS70-05 SOT-23 10

75 Philips Si-Di BAS70-05 SOT-23 10

75 Rohm Z-Di UDZ20B SOD-323 1,7 19

75 SGS Si-Di BAS70-05 SOT-23 10

75 Siemens Si-Di BAS70-05 SOT-23 10

75 Siemens Si-Di BAS70-05 SOT-23 10

75 Siemens Si-P BFQ75 SOT-73 17 BFQ23

75- Philips Si-Di BAS70-05W SOT-323 2 10

75 (X, Y, Z) KEC Z-Di U02W7.5V SOT-23 10

75PH Philips Z-Di BZD23-C75 SOD-81 9

75PH Philips Z-Di BZD27-C75 SOD-87 20

75s Siemens Si-Di BAS70-05W SOT-323 2 10

75Y Valvo Z-Di BZV49/C75 SOT-89 11 BZV85C75

76 Philips Si-Di BAS70-06 SOT-23 10

76 Philips Si-Di BAS70-06 SOT-23 10

76 SGS Si-Di BAS70-06 SOT-23 10

76 Siemens Si-Di BAS70-06 SOT-23 10

76 Siemens Si-Di BAS70-06 SOT-23 10

76 Siemens Si-P BFQ76 SOT-173 17 BFQ23

76 Thomson Si-Di BAS70J SOD-323 1,7 19

76- Philips Si-Di BAS70-06W SOT-323 2 10

76s Siemens Si-Di BAS70-06S SOT-363 2 15

73S … 76s

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Page 338:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Odpowiednik

7

76s Siemens Si-Di BAS70-06W SOT-323 2 10

77 NEC Si-N 2SC5004-FB SS Mini 1,6 10

77 Philips Si-Di BAS70-07 SOT-143 13

77 Philips Si-Di BAS70-07 SOT-143 13

77 SGS Si-Di BAS70-07 SOT-143 13

77 Siemens Si-Di BAS70-07 SOT-143 13

77 Siemens Si-Di BAS70-07 SOT-143 13

77 Siemens Si-N BFQ77 SOT-173 17 BFG65

779 AEG Si-P S779T SOT-23 10

77APH Philips Si-Di BYD77A SOD-87 20

77B Toshiba Si-Di S5277B DO-41 9

77BPH Philips Si-Di BYD77B SOD-87 20

77CPH Philips Si-Di BYD77C SOD-87 20

77D Toshiba Si-Di S5277D DO-41 9

77DPH Philips Si-Di BYD77D SOD-87 20

77EPH Philips Si-Di BYD77E SOD-87 20

77FPH Philips Si-Di BYD77F SOD-87 20

77G Toshiba Si-Di S5277G DO-41 9

77GPH Philips Si-Di BYD77G SOD-87 20

77J Toshiba Si-Di S5277J DO-41 9

77L Toshiba Si-Di S5277L DO-41 9

77N Toshiba Si-Di S5277N DO-41 9

77s Siemens Si-Di BAS70-07W SOT-343 2 13

78 National Si-P MMBT4258 SOT-23 10

7A Matsushita C-Di MA374 SOD-323 1,7 19

7A Matsushita Si-P+R UN2121 SOT-23 10

7A Motorola Si-N MMBR901 SOT-23 10

7AO KEC N-FET KTK136-O SOT-23 10

7AY KEC N-FET KTK136-Y SOT-23 10

7B Matsushita Si-P+R UN2122 SOT-23 10

7B Motorola Si-N MMBR920 SOT-23 10

7BO KEC MOS-N-FET-d KTQ127-O SOT-143 13

7BY KEC MOS-N-FET-d KTQ127-Y SOT-143 13

7C Matsushita C-Di MA376 SOD-323 1,7 19

7C Matsushita Si-P+R UN2123 SOT-23 10

76s … 7C

http://www.serwis-elektroniki.com.pl/

Page 339:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

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Odpowiednik

7

7C Motorola Si-N MMBR930 SOT-23 10

7C Toshiba Si-N YTS4123 SOT-23 10

7D Ferranti Si-Di HD4A SOT-23 10

7D Matsushita C-Di MA377 SOD-323 1,7 19

7D Matsushita Si-P+R UN2124 SOT-23 10

7D Motorola Si-N MMBR931 SOT-23 10

7E Ferranti Si-N FMMTA42R SOT-23 10

7E Motorola Si-N MMBR2060 SOT-23 10

7E Toshiba Si-N YTS2221 SOT-23 10

7F Matsushita Si-N XN6534 SOT-163 15

7F Matsushita Si-N XP6534 SOT-363 2 15

7F Motorola Si-P MMBR4957 SOT-23 10

7F Toshiba Si-N YTS2221A SOT-23 10

7G Motorola Si-N MMBR5031 SOT-23 10

7H Matsushita Si-N XN6537 SOT-163 15

7H Motorola Si-N MMBR5179 SOT-23 10

7H Samsung Si-N KST5179 SOT-23 10

7I Matsushita Si-P+R UN212X SOT-23 10

7I Toshiba Si-N YTS4400 SOT-23 10

7J Zetex Si-N-Darl FMMT38C SOT-23 10

7K Matsushita C-Di MA357 SOD-323 1,7 19

7K Matsushita Si-P+R XN1112 SOT-153 14

7K Matsushita Si-P+R XP1112 SOT-353 2 14

7K Motorola Si-N MMBR2857 SOT-23 10

7L Matsushita Si-Di MA379 SOD-323 1,7 19

7L Matsushita Si-P+R XN1113 SOT-153 14

7L Matsushita Si-P+R XP1113 SOT-353 2 14

7M Matsushita Si-P+R XN1115 SOT-153 14

7M Matsushita Si-P+R XP1115 SOT-353 2 14

7N Matsushita C-Di MA392 SOD-323 1,7 19

7N Matsushita Si-P+R XN1116 SOT-153 14

7N Matsushita Si-P+R XP1116 SOT-353 2 14

7O Matsushita Si-P+R XN111F SOT-153 14

7O Matsushita Si-P+R XP111F SOT-353 2 14

7O Toshiba Si-P 2SA1621-O SOT-23 10

7C … 7O

http://www.serwis-elektroniki.com.pl/

Page 340:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Manufact.

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7

7P Ferranti Si-N BCW66RF SOT-23 10

7P Matsushita C-Di MA393 SOD-323 1,7 19

7P Matsushita Si-P+R XN1119 SOT-153 14

7P Matsushita Si-P+R XP1119 SOT-353 2 14

7P Motorola Si-N MMBR911 SOT-23 10

7Q Matsushita Si-P+R XN1114 SOT-153 14

7Q Matsushita Si-P+R XP1114 SOT-353 2 14

7R Matsushita Si-P XN2401 SOT-153 14

7R Matsushita Si-P XP2401 SOT-353 2 14

7R Motorola Si-P MMBR536 SOT-23 10

7S Matsushita C-Di MA391 SOD-323 1,7 19

7S Matsushita Si-P/N XN1601 SOT-153 14

7S Matsushita Si-P/N XP1601 SOT-353 2 14

7T Matsushita Si-N/P+R XN4312 SOT-163 15

7T Matsushita Si-N/P+R XP4312 SOT-363 2 15

7U Matsushita Si-Di MA10301 SOD-323 1,7 19

7U Matsushita Si-N/P+R XN4316 SOT-163 15

7U Matsushita Si-N/P+R XP4316 SOT-363 2 15

7V Matsushita Si-N/P+R XN4322 SOT-163 15

7V5PH Philips Z-Di BZD23-C7V5 SOD-81 9

7V5PH Philips Z-Di BZD27-C7V5 SOD-87 20

7W Matsushita Si-P XN6435 SOT-163 15

7W Matsushita Si-P XP6435 SOT-363 2 15

7X Matsushita Si-Di MA2ZV01 SOD-323 1,7 19

7X Matsushita Si-N/P+R XN4311 SOT-163 15

7X Matsushita Si-N/P+R XP4311 SOT-363 2 15

7X Motorola Si-N MMBR571 SOT-23 10

7Y Matsushita Si-Di MA2ZV02 SOD-323 1,7 19

7Y Matsushita Si-N/P+R UN212Y SOT-23 10

7Y Motorola Si-N MMBR941 SOT-23 10

7Y Toshiba Si-P 2SA1621-Y SOT-23 10

7Y5 Valvo Z-Di BZV49/C7V5 SOT-89 11 BZV85C7V5

7Z Matsushita Si-Di MA2ZV03 SOD-323 1,7 19

7Z Matsushita Si-N+R XN6211 SOT-163 15

7Z Matsushita Si-N+R XP6211 SOT-363 2 15

7P … 7Z

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Device

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8

8

8 Hitachi C-Di HVU308 SOD-323 1,7 19

8 Matsushita Z-Di MAZS082 SOD-523 1,3 19

8 Siemens C-Di BBY58-02W (SCD-80) 1,3 19

8.2 Matsushita Z-Di MAZV082D SOT-323 2 10

8.2A Matsushita Z-Di MA3082WA SOT-23 10

8.2A Matsushita Z-Di MA4Z082WA SS Mini 1,6 10

8.2B Hitachi Z-Di HZF8.2BP DO-214AC 5 19

8.2C Hitachi Z-Di HZF8.2CP DO-214AC 5 19

801 Sanyo Si-Di FC801 SOT-163 15

802 Sanyo Si-Di FC802 SOT-163 15

803 Sanyo Si-Di FC803 SOT-163 15

804 Sanyo Si-Di FC804 SOT-153 14

805 Sanyo Si-Di FC805 SOT-153 14

806 Sanyo Si-Di FC806 SOT-153 14

809 Sanyo Si-Di FC809 SOT-153 14

80APH Philips Si-Di BYG80A SOD-106 5×2,5 19

80BPH Philips Si-Di BYG80B SOD-106 5×2,5 19

80CPH Philips Si-Di BYG80C SOD-106 5×2,5 19

80DPH Philips Si-Di BYG80D SOD-106 5×2,5 19

80FPH Philips Si-Di BYG80F SOD-106 5×2,5 19

80GPH Philips Si-Di BYG80G SOD-106 5×2,5 19

80JPH Philips Si-Di BYG80J SOD-106 5×2,5 19

817PH Philips Si-Di PRLL5817 SOD-87 20

818PH Philips Si-Di PRLL5818 SOD-87 20

819PH Philips Si-Di PRLL5819 SOD-87 20

81A National Z-Di MMBZ5250B SOT-23 10 Z-Diode20V/350mW

81A Philips Z-Di BZ5250B SOT-23 10 Z-Diode20V/350mW

81A Philips Z-Di PMBZ5250B SOT-23 10 Z-Diode20V/350mW

81B National Z-Di MMBZ5251B SOT-23 10 Z-Diode22V/350mW

81B Philips Z-Di BZ5251B SOT-23 10 Z-Diode22V/350mW

81B Philips Z-Di PMBZ5251B SOT-23 10 Z-Diode22V/350mW

81C National Z-Di MMBZ5252B SOT-23 10 Z-Diode25V/350mW

81C Philips Z-Di BZ5252B SOT-23 10 Z-Diode25V/350mW

81C Philips Z-Di PMBZ5252B SOT-23 10 Z-Diode25V/350mW

8 … 81C

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8

81D National Z-Di MMBZ5253B SOT-23 10 Z-Diode25V/350mW

81D Philips Z-Di BZ5253B SOT-23 10 Z-Diode25V/350mW

81D Philips Z-Di PMBZ5253B SOT-23 10 Z-Diode25V/350mW

81E National Z-Di MMBZ5254B SOT-23 10 Z-Diode27V/350mW

81E Philips Z-Di BZ5254B SOT-23 10 Z-Diode27V/350mW

81E Philips Z-Di PMBZ5254B SOT-23 10 Z-Diode27V/350mW

81F National Z-Di MMBZ5255B SOT-23 10 Z-Diode28V/350mW

81F Philips Z-Di BZ5255B SOT-23 10 Z-Diode28V/350mW

81F Philips Z-Di PMBZ5255B SOT-23 10 Z-Diode28V/350mW

81G National Z-Di MMBZ5256B SOT-23 10 Z-Diode30V/350mW

81G Philips Z-Di BZ5256B SOT-23 10 Z-Diode30V/350mW

81G Philips Z-Di PMBZ5256B SOT-23 10 Z-Diode30V/350mW

81H National Z-Di MM5257B SOT-23 10 Z-Diode33V/350mW

81H Philips Z-Di BZ5257B SOT-23 10 Z-Diode33V/350mW

81H Philips Z-Di PMBZ5257B SOT-23 10 Z-Diode33V/350mW

82 NEC Si-N 2SC5009-FB SS Mini 1,6 10

82 Rohm Z-Di UDZ4.3B SOD-323 1,7 19

82 Siemens Si-N BFQ82 SOT-173 17 BFQ196

82 (X, Y, Z) KEC Z-Di U02W8.2V SOT-23 10

82P AEG Si-N BFP182T SOT-143 13

82PH Philips Z-Di BZD23-C82 SOD-81 9

82PH Philips Z-Di BZD27-C82 SOD-87 20

82R AEG MOS-N-FET-d S886TR SOT-143R 13

83 NEC Si-N 2SC5010-FB SS Mini 1,6 10

83 Siemens Si-Di BAT68 SOT-23 10

83P AEG Si-N BFP183T SOT-143 13

83s Siemens Si-Di BAT68W SOT-323 2 10

84 NEC Si-N 2SC5181-FB SS Mini 1,6 10

84 Siemens Si-Di BAT68-04 SOT-23 10

849 AEG MOS-N-FET-d S849T SOT-143 13

84s Siemens Si-Di BAT68-04W SOT-323 2 10

85 National Si-Di MMBD1701 SOT-23 10

85 Rohm Z-Di UDZ22B SOD-323 1,7 19

85 Siemens Si-Di BAT68-05 SOT-23 10

852 AEG Si-N S852T SOT-23 10

81D … 852

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

8

858 AEG LIN-IC S850TA1 SOT-143 13

85A National Si-Di MMBD1701A SOT-23 10

85BPH Philips Si-Di BYG85B SOD-106 5×2,5 19

85s Siemens Si-Di BAT68-05W SOT-323 2 10

86 NEC Si-N 2SC5186-FB SS Mini 1,6 10

86 Siemens Si-Di BAT68-06 SOT-23 10

86 Thomson Si-Di BAT54J SOD-323 1,7 19

860 AEG LIN-IC S860T SOT-143 13

868 AEG LIN-IC S868T SOT-143 13

86s Siemens Si-Di BAT68-06W SOT-323 2 10

87 National Si-Di MMBD1703 SOT-23 10

87 Siemens Si-Di BAT68-07 SOT-143 13

87 Siemens Si-Di BAT68-07 SOT-143 13

87 Siemens Si-Di BAT68-07W SOT-343 2 13

879 AEG Si-P S879T SOT-23 10

87A National Si-Di MMBD1703A SOT-23 10

88 National Si-Di MMBD1704 SOT-23 10

88 NEC Si-N 2SC5195-FB SS Mini 1,6 10

887 AEG MOS-N-FET-d S887 SOT-143 13

888 AEG MOS-N-FET-d S888T SOT-143 13

8888 Philips Si-Di BYD127 SOD-87 20

8888 Philips Si-Di BYD147 SOD-87 20

8888 Philips Si-Di BYD167 SOD-87 20

88A National Si-Di MMBD1704A SOT-23 10

88T NEC Si-N µPA814T SOT-363 2 15

89 National Si-Di MMBD1705 SOT-23 10

897 AEG Si-N S897T SOT-143 13

89A National Si-Di MMBD1705A SOT-23 10

8A Hitachi Z-IC HA178L02UA SOT-89 11

8A Matsushita Si-N+R UN2211 SOT-23 10

8A Matsushita Si-N+R UN5211 SOT-323 2 10

8A Matsushita Si-N+R UN9211 SS Mini 1,6 10

8A Motorola Si-N+R MUN2211 SOT-23 10

8A Motorola Si-N+R MUN5211 SOT-323 2 10

8A National Z-Di MMBZ5226B SOT-23 10

858 … 8A

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Page 344:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

- 335 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

8

8A Philips Z-Di BZ5226B SOT-23 10 Z-Diode3.3V/350mW

8A Philips Z-Di PMBZ5226B SOT-23 10

8AB Si-N BC846B SOT-23 10

8B Hitachi Z-IC HA178L05UA SOT-89 11

8B Matsushita Si-N+R UN2212 SOT-23 10

8B Matsushita Si-N+R UN5212 SOT-323 2 10

8B Matsushita Si-N+R UN9212 SS Mini 1,6 10

8B Motorola Si-N+R MUN2212 SOT-23 10

8B Motorola Si-N+R MUN5212 SOT-323 2 10

8B National Z-Di MMBZ5227B SOT-23 10

8B Philips Z-Di BZ5227B SOT-23 10 Z-Diode3.6V/350mW

8B Philips Z-Di PMBZ5227B SOT-23 10

8C Hitachi Z-IC HA178L56UA SOT-89 11

8C Matsushita Si-N+R UN2213 SOT-23 10

8C Matsushita Si-N+R UN5213 SOT-323 2 10

8C Matsushita Si-N+R UN9213 SS Mini 1,6 10

8C Motorola Si-N+R MUN2213 SOT-23 10

8C Motorola Si-N+R MUN5213 SOT-323 2 10

8C National Z-Di MMBZ5228B SOT-23 10

8C Philips Z-Di BZ5228B SOT-23 10 Z-Diode3.9V/350mW

8C Philips Z-Di PMBZ5228B SOT-23 10

8D Hitachi Z-IC HA178L06UA SOT-89 11

8D Matsushita Si-N+R UN2214 SOT-23 10

8D Matsushita Si-N+R UN5214 SOT-323 2 10

8D Matsushita Si-N+R UN9214 SS Mini 1,6 10

8D Motorola Si-N+R MUN2214 SOT-23 10

8D Motorola Si-N+R MUN5214 SOT-323 2 10

8D National Z-Di MMBZ5229B SOT-23 10

8D Philips Z-Di BZ5229B SOT-23 10 Z-Diode4.3V/350mW

8D Philips Z-Di PMBZ5229B SOT-23 10

8E Ferranti Si-P FMMTA92R SOT-23 10

8E Hitachi Z-IC HA178L08UA SOT-89 11

8E Matsushita Si-N+R UN2215 SOT-23 10

8E Matsushita Si-N+R UN5215 SOT-323 2 10

8E Matsushita Si-N+R UN9215 SS Mini 1,6 10

8A … 8E

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

8

8E Motorola Si-N+R MUN2215 SOT-23 10

8E Motorola Si-N+R MUN5215 SOT-323 2 10

8E National Z-Di MMBZ5230B SOT-23 10

8E Philips Z-Di BZ5230B SOT-23 10 Z-Diode4.7V/350mW

8E Philips Z-Di PMBZ5230B SOT-23 10

8F Hitachi Z-IC HA178L09UA SOT-89 11

8F Matsushita Si-N+R UN2216 SOT-23 10

8F Matsushita Si-N+R UN5216 SOT-323 2 10

8F Matsushita Si-N+R UN9216 SS Mini 1,6 10

8F Motorola Si-N+R MUN2216 SOT-23 10

8F Motorola Si-N+R MUN5216 SOT-323 2 10

8F National Z-Di MMBZ5231B SOT-23 10

8F Philips Z-Di BZ5231B SOT-23 10 Z-Diode5.1V/350mW

8F Philips Z-Di PMBZ5231B SOT-23 10

8G Hitachi Z-IC HA178L10UA SOT-89 11

8G Motorola Si-N+R MUN2230 SOT-23 10

8G Motorola Si-N+R MUN5230 SOT-323 2 10

8G National Z-Di MMBZ5232B SOT-23 10

8G Philips Z-Di BZ5232B SOT-23 10 Z-Diode5.6V/350mW

8G Philips Z-Di PMBZ5232B SOT-23 10

8H Hitachi Z-IC HA178L12UA SOT-89 11

8H Matsushita Si-N+R UN2217 SOT-23 10

8H Matsushita Si-N+R UN5217 SOT-323 2 10

8H Matsushita Si-N+R UN9217 SS Mini 1,6 10

8H Motorola Si-N+R MUN2231 SOT-23 10

8H Motorola Si-N+R MUN5231 SOT-323 2 10

8H National Z-Di MMBZ5233B SOT-23 10

8H Philips Z-Di BZ5233B SOT-23 10 Z-Diode6.0V/350mW

8H Philips Z-Di PMBZ5233B SOT-23 10

8I Matsushita Si-N+R UN2218 SOT-23 10

8I Matsushita Si-N+R UN5218 SOT-323 2 10

8I Matsushita Si-N+R UN9218 SS Mini 1,6 10

8J Hitachi Z-IC HA178L15UA SOT-89 11

8J Motorola Si-N+R MUN2232 SOT-23 10

8J Motorola Si-N+R MUN5232 SOT-323 2 10

8E … 8J

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Page 346:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

8

8J National Z-Di MMBZ5234B SOT-23 10

8J Philips Z-Di BZ5234B SOT-23 10 Z-Diode6.2V/350mW

8J Philips Z-Di PMBZ5234B SOT-23 10

8K Matsushita Si-N+R UN2219 SOT-23 10

8K Matsushita Si-N+R UN5219 SOT-323 2 10

8K Matsushita Si-N+R UN9219 SS Mini 1,6 10

8K Motorola Si-N+R MUN2233 SOT-23 10

8K Motorola Si-N+R MUN5233 SOT-323 2 10

8K National Z-Di MMBZ5235B SOT-23 10

8K Philips Z-Di BZ5235B SOT-23 10 Z-Diode6.8V/350mW

8K Philips Z-Di PMBZ5235B SOT-23 10

8L Matsushita Si-N+R UN2210 SOT-23 10

8L Matsushita Si-N+R UN5210 SOT-323 2 10

8L Matsushita Si-N+R UN9210 SS Mini 1,6 10

8L Motorola Si-N+R MUN2234 SOT-23 10

8L Motorola Si-N+R MUN5234 SOT-323 2 10

8L National Z-Di MMBZ5236B SOT-23 10

8L Philips Z-Di BZ5236B SOT-23 10 Z-Diode7.5V/350mW

8L Philips Z-Di PMBZ5236B SOT-23 10

8M Matsushita Si-N+R UN221D SOT-23 10

8M Matsushita Si-N+R UN521D SOT-323 2 10

8M Matsushita Si-N+R UN921D SS Mini 1,6 10

8M National Z-Di MMBZ5237B SOT-23 10

8M Philips Z-Di BZ5237B SOT-23 10 Z-Diode8.2V/350mW

8M Philips Z-Di PMBZ5237B SOT-23 10

8N Matsushita Si-N+R UN221E SOT-23 10

8N Matsushita Si-N+R UN521E SOT-323 2 10

8N Matsushita Si-N+R UN921E SS Mini 1,6 10

8N National Z-Di MMBZ5238B SOT-23 10

8N Origin Si-Di DA8N SIP-9 (23×8×4) 22

8N Philips Z-Di BZ5238B SOT-23 10 Z-Diode8.7V/350mW

8N Philips Z-Di PMBZ5238B SOT-23 10

8O Matsushita Si-N+R UN221F SOT-23 10

8O Matsushita Si-N+R UN521F SOT-323 2 10

8O Matsushita Si-N+R UN921F SS Mini 1,6 10

8J … 8O

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Page 347:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

8

8P Matsushita Si-N+R UN221K SOT-23 10

8P Matsushita Si-N+R UN521K SOT-323 2 10

8P Matsushita Si-N+R UN921K SS Mini 1,6 10

8P National Z-Di MMBZ5239B SOT-23 10

8P Origin Si-Di DA8P SIP-9 (23×8×4) 22

8P Philips Z-Di BZ5239B SOT-23 10 Z-Diode9.1V/350mW

8P Philips Z-Di PMBZ5239B SOT-23 10

8Q Matsushita Si-N+R UN221L SOT-23 10

8Q Matsushita Si-N+R UN521L SOT-323 2 10

8Q Matsushita Si-N+R UN921L SS Mini 1,6 10

8Q National Z-Di MMBZ5240B SOT-23 10

8Q Philips Z-Di BZ5240B SOT-23 10 Z-Diode10V/350mW

8Q Philips Z-Di PMBZ5240B SOT-23 10

8R Matsushita Si-Di MA304 SOD-323 1,7 19

8R Matsushita Si-N+R XN4212 SOT-163 15

8R Matsushita Si-N+R XP4212 SOT-363 2 15

8R National Z-Di MMBZ5241B SOT-23 10

8R Philips Z-Di BZ5241B SOT-23 10 Z-Diode11V/350mW

8R Philips Z-Di PMBZ5241B SOT-23 10

8S Matsushita Si-N+R UN5201 SOT-323 2 10

8S Matsushita Si-N+R XN4213 SOT-163 15

8S Matsushita Si-N+R XP4213 SOT-363 2 15

8S National Z-Di MMBZ5242B SOT-23 10

8S Philips Z-Di BZ5242B SOT-23 10 Z-Diode12V/350mW

8S Philips Z-Di PMBZ5242B SOT-23 10

8T Matsushita Si-N+R XN4215 SOT-163 15

8T Matsushita Si-N+R XP4215 SOT-363 2 15

8T National Z-Di MMBZ5243B SOT-23 10

8T Philips Z-Di BZ5243B SOT-23 10 Z-Diode13V/350mW

8T Philips Z-Di PMBZ5243B SOT-23 10

8U Matsushita Si-N+R XN4216 SOT-163 15

8U Matsushita Si-N+R XP4216 SOT-363 2 15

8U National Z-Di MMBZ5244B SOT-23 10

8U Philips Z-Di BZ5244B SOT-23 10 Z-Diode14V/350mW

8U Philips Z-Di PMBZ5244B SOT-23 10

8P … 8U

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Page 348:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

9

8V Matsushita Si-N+R XN6212 SOT-163 15

8V Matsushita Si-N+R XP6212 SOT-363 2 15

8V National Z-Di MMBZ5245B SOT-23 10

8V Philips Z-Di BZ5245B SOT-23 10 Z-Diode15V/350mW

8V Philips Z-Di PMBZ5245B SOT-23 10

8V2PH Philips Z-Di BZD23-C8V2 SOD-81 9

8V2PH Philips Z-Di BZD27-C8V2 SOD-87 20

8W Matsushita Si-N+R XN6213 SOT-163 15

8W Matsushita Si-N+R XP6213 SOT-363 2 15

8W National Z-Di MMBZ5246B SOT-23 10

8W Philips Z-Di BZ5246B SOT-23 10 Z-Diode16V/350mW

8W Philips Z-Di PMBZ5246B SOT-23 10

8X Matsushita Si-N+R UNR921AJ SC-81 1,6 10

8X Matsushita Si-N+R XN6215 SOT-163 15

8X Matsushita Si-N+R XP6215 SOT-363 2 15

8X National Z-Di MMBZ5247B SOT-23 10

8X Philips Z-Di BZ5247B SOT-23 10 Z-Diode17V/350mW

8X Philips Z-Di PMBZ5247B SOT-23 10

8Y Matsushita Si-N+R UNR921BJ SC-81 1,6 10

8Y Matsushita Si-N+R XN6216 SOT-163 15

8Y Matsushita Si-N+R XP6216 SOT-363 2 15

8Y National Z-Di MMBZ5248B SOT-23 10

8Y Philips Z-Di BZ5248B SOT-23 10 Z-Diode18V/350mW

8Y Philips Z-Di PMBZ5248B SOT-23 10

8Y2 Valvo Z-Di BZV49/C8V2 SOT-89 11 BZV85C8V2

8Z Matsushita Si-N+R UNR921CJ SC-81 1,6 10

8Z Matsushita Si-N+R XN4210 SOT-163 15

8Z Matsushita Si-N+R XP4210 SOT-363 2 15

8Z National Z-Di MMBZ5249B SOT-23 10

8Z Philips Z-Di BZ5249B SOT-23 10 Z-Diode19V/350mW

8Z Philips Z-Di PMBZ5249B SOT-23 10

9

9 Hitachi Si-Di HSU88 SOD-323 1,7 19

9 Matsushita Z-Di MAZS091 SOD-523 1,3 19

8V … 9

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

9

9 Rohm Diode RB731V SOD-323 1,7 19

9.1 (X, Y, Z) KEC Z-Di U02W9.1V SOT-23 10

9.1B Hitachi Z-Di HZF9.1BP DO-214AC 5 19

9.1C Hitachi Z-Di HZF9.1CP DO-214AC 5 19

9.1C Hitachi Z-Di HZF9.1CP DO-214AC 5 19

9.1K Matsushita Z-Di MA3091WK SOT-23 10

9020PH Philips Si-Di BYG90-20 SOD-106 5×2,5 19

903 Sanyo Si-Di FC903 SOT-163 15

9030PH Philips Si-Di BYG90-30 SOD-106 5×2,5 19

9040PH Philips Si-Di BYG90-40 SOD-106 5×2,5 19

9090PH Philips Si-Di BYG90-90 SOD-106 5×2,5 19

91 Matsushita N-FET 2SK300-1 SOT-23 10

913 AEG MOS-N-FET-d S913T SOT-143 13

918 AEG MOS-N-FET-d S918T SOT-143 13

91A Zetex Si-P FMMT591A SOT-23 10

91PH Philips Z-Di BZD23-C91 SOD-81 9

91PH Philips Z-Di BZD27-C91 SOD-87 20

92 Matsushita N-FET 2SK300-2 SOT-23 10

92 Rohm Z-Di EDZ4.7B SC-79 1,3 19

92 Rohm Z-Di UDZ4.7B SOD-323 1,7 19

92V AEG Si-N BFP92A SOT-143 13

93 Matsushita N-FET 2SK300-3 SOT-23 10

93R AEG MOS-N-FET-d S593TR SOT-143R 13

94 Matsushita N-FET 2SK300-4 SOT-23 10

949 AEG MOS-N-FET-d S949T SOT-143 13

94R AEG MOS-N-FET-d S594TR SOT-143R 13

95 Rohm Z-Di UDZ24B SOD-323 1,7 19

95B Toshiba Si-Di S5295B DO-15 9

95D Toshiba Si-Di S5295D DO-15 9

95G Toshiba Si-Di S5295G DO-15 9

95J Toshiba Si-Di S5295J DO-15 9

97 Philips Si-N/P BCV65 SOT-143 13

98 Philips Si-N/P BCV65B SOT-143 13

982 AEG MOS-N-FET-d S886T SOT-143 13

99R AEG MOS-N-FET-d S949TR SOT-143R 13

9 … 99R

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Page 350:  · 2017-11-16 · kich obudowach, jak: TO-3, TO-220, TO-252, itp. ... N-FET (IC) - n tranzystorów polowych z kana³em typu N N-FET+Si-N - tranzystor polowy z kana³em typu N + tranzystor

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Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

9

9A Matsushita Si-N+R UN2221 SOT-23 10

9B Hitachi Z-IC HA179L05U SOT-89 11

9B Matsushita Si-N+R UN2222 SOT-23 10

9C Matsushita Si-N+R UN2223 SOT-23 10

9D Hitachi Z-IC HA179L06U SOT-89 11

9D Matsushita Si-N+R UN2224 SOT-23 10

9E Hitachi Z-IC HA179L08U SOT-89 11

9F Hitachi Z-IC HA179L09U SOT-89 11

9F Matsushita Si-N XN1531 SOT-153 14

9F Matsushita Si-N XP01531 SOT-353 2 14

9G Hitachi Z-IC HA179L10U SOT-89 11

9H Hitachi Z-IC HA179L12U SOT-89 11

9H Matsushita Si-N+R XN1214 SOT-153 14

9H Matsushita Si-N+R XP1214 SOT-353 2 14

9I Matsushita Si-N XN2531 SOT-153 14

9J Hitachi Z-IC HA179L15U SOT-89 11

9K Matsushita Si-N+R XN1212 SOT-153 14

9K Matsushita Si-N+R XP1212 SOT-353 2 14

9L Matsushita Si-N+R XP1213 SOT-353 2 14

9M Matsushita Si-N+R XN1215 SOT-153 14

9M Matsushita Si-N+R XP1215 SOT-353 2 14

9N Matsushita Si-N+R XN1216 SOT-153 14

9N Matsushita Si-N+R XP1216 SOT-353 2 14

9O Matsushita Si-N+R XN2211 SOT-153 14

9O Matsushita Si-N+R XP2211 SOT-353 2 14

9P Matsushita Si-N+R XN1217 SOT-153 14

9P Matsushita Si-N+R XP1217 SOT-353 2 14

9Q Matsushita Si-N+R XN2210 SOT-153 14

9Q Matsushita Si-N+R XP2210 SOT-353 2 14

9R Matsushita Si-N+R XN2215 SOT-153 14

9R Matsushita Si-N+R XN2215 SOT-353 2 14

9S Matsushita Si-N+R XN1111 SOT-153 14

9S Matsushita Si-N+R XP1111 SOT-353 2 14

9T Matsushita Si-N+R XN1211 SOT-153 14

9T Matsushita Si-N+R XP1211 SOT-353 2 14

9A … 9T

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- 342 -

Code

Kod

Manufact.

Producent

Device

Opis

Type

Typ

Case

Obudowa

Dim.

Wymiary

Fig.

Rys.

Equivalence

Odpowiednik

9

9U Matsushita Si-N+R XN4111 SOT-163 15

9U Matsushita Si-P XP4111 SOT-363 2 15

9V Matsushita Si-N+R XN4211 SOT-163 15

9V Matsushita Si-N+R XN4211 SOT-363 2 15

9V1PH Philips Z-Di BZD23-C9V1 SOD-81 9

9V1PH Philips Z-Di BZD27-C9V1 SOD-87 20

9W Matsushita Si-N/P XN7651 SOT-163 15

9X Matsushita Si-P+R XN111H SOT-153 14

9X Matsushita Si-P+R XP111H SOT-353 2 14

9Y Matsushita Si-N XN6543 SOT-163 15

9Y Matsushita Si-N XP6543 SOT-363 2 15

9Y1 Valvo Z-Di BZV49/C9V1 SOT-89 11 BZV85C9V1

9Z Matsushita Si-N+N-FET XN8081 SOT-163 15

9Z Matsushita Si-N+N-FET XP8081 SOT-363 2 15

9U … 9Z

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- 343 -

Rys.12

Rys.8

Rys.4

Rys.11

Rys.7

Rys.3

Rys.10

Rys.6

Rys.2

Rys.9

Rys.5

Rys.1

1

3

2

TO-3

1 2 3

4

widok z przodu

TO-126

TO-92

1 2 3widok od spodu 1 2 3

4

widok z przodu1 2 3

4

TO-220

widok z przodu

1 2 3

4

1 2

1

1

2

2

1 2

3

widok z góry

1

2

3

4

1 2 3

widok od spodu

TO-252

1 2 3

SOT-89

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- 344 -

Rys.24

Rys.20

Rys.16

Rys.23

Rys.19

Rys.15

Rys.22

Rys.18

Rys.14

Rys.21

Rys.17

Rys.13

2

1

2

14 4

3 3

widok z góry

widok z góry

widok z góry widok z góry

widok z góry widok z góry

widok z góry widok z góry

widok z góry

21

4

3

1 5

2

3 4

1 6

2 5

3 4

1

2

3

4

1

2

3

4

1

n

DIP SIP

1

1 12 2

SOD-6:SOD-15:SOD-123:SOD-323:

6,4 × 4,20mm8,0 × 5,20mm2,7 × 1,55mm1,7 × 1,25mm

SOT-143(R): 2,9 ×1,50mmSOD-343: 2,0 ×1,25mm

SOT-153: 2,9 ×1,50mmSOD-353: 2,0 ×1,25mm

SOT-163: 2,9 ×1,50mmSOD-363: 2,0 ×1,25mm

SOT-223

5,0 × 2,5mm

3,4 × 1,6mm

3,5 × 1,4mm

φφ

DO-213:

MINIMELF:

MELF:

widok z góry

MDIP: 1,27mmSSMDIP: 0,65mm

1

n

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