Underground M3 Final Meeting June 10, CambridgeIMM Bologna

IMM Final Report within Underground M3 ProjectIMM Final Report within Underground M3 Project

M h 44M h 44thth MEMS i i iMEMS i i iMonth 44Month 44th th –– MEMS activitiesMEMS activities

M. Ferri, A. Roncaglia, L. Belsito, J. Yan*, A. Seshia*, K. Soga*M. Ferri, A. Roncaglia, L. Belsito, J. Yan*, A. Seshia*, K. Soga*

Institute of Microelectronics and Microsystems (IMM), BolognaInstitute of Microelectronics and Microsystems (IMM), Bologna**Cambridge University Engineering Dept CambridgeCambridge University Engineering Dept CambridgeCambridge University, Engineering Dept., CambridgeCambridge University, Engineering Dept., Cambridge

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

OutlineOutline

NewNew powerpower harvestingharvesting devicedevice fabricationfabrication processprocess::

OutlineOutline

•• NewNew powerpower harvestingharvesting devicedevice fabricationfabrication processprocess::batchbatch statusstatus

•• ProgressProgress onon crackmetercrackmeter prototypingprototyping:: firstfirst laboratorylaboratoryteststests onon closedclosed looploop operationoperation

•• ActivityActivity planplan forfor deploymentdeployment ofof thethe crackmetercrackmeter ininPraguePrague undergroundunderground

2

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

OutlineOutline

NewNew powerpower harvestingharvesting devicedevice fabricationfabrication processprocess::

OutlineOutline

•• NewNew powerpower harvestingharvesting devicedevice fabricationfabrication processprocess::batchbatch statusstatus

•• ProgressProgress onon crackmetercrackmeter prototypingprototyping:: firstfirst laboratorylaboratoryteststests onon closedclosed looploop operationoperation

•• ActivityActivity planplan forfor deploymentdeployment ofof thethe crackmetercrackmeter ininPraguePrague undergroundunderground

3

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

New fabrication process: power harvesting MEMSNew fabrication process: power harvesting MEMSNew fabrication process: power harvesting MEMSNew fabrication process: power harvesting MEMS

Mask design for process 1, 2 completedMask design for process 1, 2 completed

Mask design for process 3 still under developmentMask design for process 3 still under development

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

New fabrication process: power harvesting MEMSNew fabrication process: power harvesting MEMSNew fabrication process: power harvesting MEMSNew fabrication process: power harvesting MEMS

Process 1, 2: MEMS with front and backside silicon etching for the fabrication of Process 1, 2: MEMS with front and backside silicon etching for the fabrication of po er har esting de ices ith integrated Schottk diodes and MOS capacitorspo er har esting de ices ith integrated Schottk diodes and MOS capacitorspower harvesting devices with integrated Schottky diodes and MOS capacitorspower harvesting devices with integrated Schottky diodes and MOS capacitors

Process 3: MEMS with front and backside silicon etching for the fabrication of power Process 3: MEMS with front and backside silicon etching for the fabrication of power harvesting devices based on PZT materials integrated on siliconharvesting devices based on PZT materials integrated on siliconharvesting devices based on PZT materials integrated on siliconharvesting devices based on PZT materials integrated on silicon

5

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Power harvesting MEMS: process flowPower harvesting MEMS: process flowPower harvesting MEMS: process flowPower harvesting MEMS: process flow

1. Springs Mask patterning 2. Oxide RIE etching 3. Device Mask patterning1. Springs Mask patterning 2. Oxide RIE etching 3. Device Mask patterning

4. Oxide RIE etching 5. Polysilicon RIE etching 6. Oxide RIE etching

7. DRIE time etching 8. Polysilicon RIE etching 9. Oxide RIE etching

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Power harvesting MEMS: process flowPower harvesting MEMS: process flowPower harvesting MEMS: process flowPower harvesting MEMS: process flow

10. DRIE etching 11. Back 1 Mask patterning 12. Polysilicon RIE etching 13. Oxide RIE etching

14. LTO deposition 15. Back 2 Mask patterning 16. Oxide DRIE etching 17. Silicon DRIE etching

18. Oxide etching 19. Silicon DRIE etching 20. HF vapour etching 20. Metal deposition

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Power harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachining

8

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Power harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachining

9

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Power harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachiningPower harvesting MEMS: device layer micromachining

10

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

OutlineOutline

NewNew powerpower harvestingharvesting devicedevice fabricationfabrication processprocess::

OutlineOutline

•• NewNew powerpower harvestingharvesting devicedevice fabricationfabrication processprocess::batchbatch statusstatus

•• ProgressProgress onon crackmetercrackmeter prototypingprototyping:: firstfirst laboratorylaboratoryteststests onon closedclosed looploop operationoperation

•• ActivityActivity planplan forfor deploymentdeployment ofof thethe crackmetercrackmeter ininPraguePrague undergroundunderground

11

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter: Testing (open loop)Crackmeter: Testing (open loop)MeasurementsMeasurements onon UCAMUCAM--CNRCNR parallelparallel--plateplate resonatorresonator withinwithin thethe crackmetercrackmeterwithwith appliedapplied strainstrain

g ( p p)g ( p p)

50db]

StrainStrain sensitivitysensitivity ofof roughlyroughly 1010Hz/Hz/µStrainµStrain,, stablestable resultsresults withwith constantconstantappliedapplied strain,strain, reversiblereversible operationoperation..-70

-60

-50

itude

Spe

ctru

m [

appliedapplied strain,strain, reversiblereversible operationoperation..StrainStrain appliedapplied inin thethe rangerange 00--100100µStrainµStrain..

-90

-80

Cal

ibra

ted

Am

pl Nostrain 16ustrain 41ustrain 72ustrain 92ustrain 107ustrain 118ustrain

12

436000 437000 438000 439000

Frequency [Khz]

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter prototyping: board design for closed loopCrackmeter prototyping: board design for closed loopCrackmeter prototyping: board design for closed loopCrackmeter prototyping: board design for closed loop

Noisy response (Vdc from 15Noisy response (Vdc from 15--1212--1717--12V), 200Hz12V), 200HzOld circuitOld circuit

4 0220000000E+054.0240000000E+054.0260000000E+054.0280000000E+054.0300000000E+054.0320000000E+05

Noisy response (Vdc from 15Noisy response (Vdc from 15 1212 1717 12V), 200Hz12V), 200HzOld circuitOld circuit

4.0140000000E+054.0160000000E+054.0180000000E+054.0200000000E+054.0220000000E+05

1 24 47 70 93 116 139 162 185 208 231 254 277 300 323 346 369 392

Parameter optimizationParameter optimization Stable response (Vdc from 15VStable response (Vdc from 15V--30V30V--15V, electrostatic induced strain)15V, electrostatic induced strain)

4.0050000000E+05

4.0100000000E+05

4.0150000000E+05

4.0200000000E+05

4.0250000000E+05

4.0300000000E+05

3.9950000000E+05

4.0000000000E+05

1 284 567 850 1133 1416 1699 1982 2265 2548 2831 3114 3397 3680 3963 4246 4529

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter: Testing (closed loop)Crackmeter: Testing (closed loop)

First tests performed in Cambridge in dynamic vacuumFirst tests performed in Cambridge in dynamic vacuum

Crackmeter: Testing (closed loop)Crackmeter: Testing (closed loop)

p g yp g y

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsOscillator waveform for varying MEMS DC biasesOscillator waveform for varying MEMS DC biases

8 V8 V 9 V9 V 10 V10 V

1511 V11 V 12 V12 V 13 V13 V

Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test results

Short term frequency stability (DC = 15V) around 0.2 Hz (0.02 με strain resolution)Short term frequency stability (DC = 15V) around 0.2 Hz (0.02 με strain resolution)

4.0270610000E+05

4.0270615000E+05

4.0270620000E+05

4 0270595000E+05

4.0270600000E+05

4.0270605000E+05

4.0270590000E+05

4.0270595000E+05

1 12 23 34 45 56 67 78 89 100 111 122 133 144

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test results

Vibration isolation: Strain gauge 1. Long term stability: 10mins, 25V. (25Hz 2.5με over Vibration isolation: Strain gauge 1. Long term stability: 10mins, 25V. (25Hz 2.5με over 10 mins) probably due to temperature drift10 mins) probably due to temperature drift10 mins), probably due to temperature drift10 mins), probably due to temperature drift

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test results

Initial Strain Test (gauge 1)Initial Strain Test (gauge 1)

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test results

Initial Temperature test 1 (gauge 1):Initial Temperature test 1 (gauge 1):

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test results

Initial Temperature test 2 (gauge 1):Initial Temperature test 2 (gauge 1):

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Crackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test resultsCrackmeter prototyping: first test results

Knocking test (gauge 2)Knocking test (gauge 2)

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

Activity plan for crackmeter deploymentActivity plan for crackmeter deploymentActivity plan for crackmeter deploymentActivity plan for crackmeter deployment

•• FurtherFurther tests/systemtests/system calibrationcalibration

•• BatteryBattery solutionsolution forfor oscillatoroscillator boardboard (DC/DC(DC/DC converterconverter toto realizerealize 33VV

yy

toto 1515V/V/3030VV conversion)conversion)

•• OnOn boardboard frequencyfrequency countercounter designdesign withwith laptoplaptop interfaceinterface(compatible(compatible withwith WiWi--FiFi internetinternet connectionconnection forfor remoteremote readingreading ofof thethecrackmeter)crackmeter) andand onon boardboard temperaturetemperature sensingsensingcrackmeter)crackmeter) andand onon--boardboard temperaturetemperature sensingsensing

•• FinalFinal deploymentdeploymentyy

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Underground M3 Final Meeting June 10, CambridgeIMM Bologna

FinalFinal deploymentdeployment

Underground wallUnderground wall

FinalFinal deploymentdeployment

WiWi FiFiWiWi--FiFi

Closed loop board Frequency meter

USB connection

Closed loop board Frequency meter board