IE Module-1

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UNIT-1

EL 502: Industrial Electronics/ Power Devices

MUHSIN C.A.Govt. Poly Technic, Chelari


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16 July 2011 2Industrial Electronics


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MOSFET Circuit



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MOSFET Symbol Circuit



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Structure of MOSFET



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Schematic structure ofMOSFET



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Working principle ofMOSFET

modulation of charge concentration by a MOS capacitance between a body electrode and a gate electrode located above the

body and insulated an oxide, such as silicon dioxide.



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Working principle ofMOSFET If dielectrics other than an oxide :>> a metalinsulator

semiconductor FET (MISFET).

Compared to the MOS capacitor, the MOSFET includes two

additional terminals (source and drain), each connected to

individual highly doped regions that are separated by the body

region.



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N and P channel ofMOSFET



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N and P channel ofMOSFET

If the MOSFET is an n-channel ornMOS FET, then the source and

drain are 'n+' regions and the body is a 'p' region.

If the MOSFET is a p-channel orpMOS FET, then the source and

drain are 'p+' regions and the body is a 'n' region.



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Cross section of NMOS withchannel- OFF state



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Basic MOSFET (n-channel) The gate electrode is

placed on top of a verythin insulating layer.

There are a pair of smalln-type regions just underthe drain & source

electrodes. If apply a +ve voltage to

gate, will push away theholes inside the p-typesubstrate and attracts the

moveable electrons in then-type regions under thesource & drainelectrodes.



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Basic MOSFET (n-channel) Increasing the +ve gate

voltage pushes the p-type holes further away

and enlarges the

thickness of the created

channel. As a result increases the

amount of current which

can go from source to

drain this is why this

kind of transistor is calledan enhancement mode

device.



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Cross-section and circuit symbol of an n-typeMOSFET.



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An n-channel MOS transistor. The gate-oxide thickness, TOX, is

approximately 100 angstroms (0.01 m). A typical transistorlength, L = 2 . The bulk may be either the substrate or a well.The diodes represent pn-junctions that must be reverse-biased



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Basic MOSFET (p-channel)

These behave in a similar way, but they pass

current when a -ve gate voltage creates an effective

p-type channel layer under the insulator.

By swapping around p-type for n-type we can makepairs of transistors whose behaviour is similar

except that all the signs of the voltages and currents

are reversed.

Pairs of devices like this care called complimentarypairs.



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In an n-channel MOSFET, the channel is

made of n-type semiconductor, so the

charges free to move along the channel are

negatively charged (electrons).

In a p-channel device the free charges which

move from end-to-end are positively charged(holes).



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Structure and principle ofoperation A top view of MOSFET, where the

gate length, L, and gate width, W. Note that L does not equal the

physical dimension of the gate, butrather the distance between thesource and drain regions

underneath the gate. The overlap between the gate and

the source/drain region is required toensure that the inversion layer formsa continuous conducting path

between the source and drainregion. Typically this overlap is made as

small as possible in order tominimize its parasitic capacitance.

Top view of an n-typeMOSFET



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Ideal Output Characteristics ofMOSFET



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Ideal Transfer Characteristics ofMOSFET



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Gate Oxide Thickness



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Channel Profile Evolution



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MOSFET Capacitances



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MOSFET Capacitances



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Insulated GateBipolar Transistors

(IGBT)


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Industrial Electronics

Construction & Operation of IGBT

GATE EMITTER

COLLECTOR

N NP P

N-

P+N+

Structure Of IGBT

COLLECTOR

GATE

EMITTER

Equivalent Circuit

The operation of the IGBT simply can be treated as a partitioning of an

N-channel MOSFET and a PNP bipolar transistor.The IGBT functions as a bipolar transistor that is supplied base current

by a MOSFET.

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IGBT(Insulated Gate Bipolar Transistor) is a voltage-controlled power transistor, similar

to the power MOSFET in operation and construction.

These devices offer superior performance to the bipolar-transistors. They are core cost-

effective solution in high power, wide range of frequency applications

I G B T

VOLTAGE

LOW

SIMPLE

LOW

MEDIUM

MEDIUM

MOSFET

VOLTAGE

LOW

SIMPLE

HIGH

FAST

LOW

T R

CURRENT

HIGH

COMPLEX

LOW

SLOW

HIGH

SYMBOL

ITEM

CONTROL PARAMETER

CONTROL POWER

CONTROL CIRCUIT

ON-RESISTANCE

SWITCHING SPEED

SWITCHING LOSS

COMPARISON TABLE

What`s a IGBT ?

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Absolute Maximum Rating of IBGT

Tj(max) - TC

PC (max)

Symbol Descriptions

BVCESBVGESICmax

ICpeak

PCmax

FBSOA

SCSOA

Maximum voltage applicable between C-E (The Gate-Emitter is short-circuited)Maximum voltage applicable between G-EMaximum DC current can flow into the collector. Indicated by radiation condition (ex:

TC=25C)Maximum Peak current can flow into the collector. Indicated by current pulsewidth(ex:10s) and Duty-cycle(ex:below 1%), and Radiation condition.Allowable collector loss and maximum current consumption.In usual case, at the temperature of TC (ex : 25C), the thermal resistance

Rjc = --------------------- becomes and usually indicated by its upper limit.

Forward Bias Safe Operating AreaIt is the maximum pulse responding operation range to the voltageVce between C-Eand the graph of the collector current. The characteristics of the high voltage part isdeteriorated due to the thermal loss and the over concentration of current.It is because of the phenomena called the second breakdown mode.

Short Circuit Safe Operating Area For motor driving, if the load is short-circuited due tohuman fault then the flow of the abnormally high current would destroy the device,so the current sensing and the feedback to the control block become the necessity.Which requires the IGBT should withstand the short- circuit condition for about 3~5s.

ex: If the load is short-circuited when the applied voltage between the C-E is about300~500V, then the current upto 8-12 times higher than the rated current will flowwhich would destroy the device within 20~30s. Thus the protective circuit isdesigned to be about 10s with the consideration

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Symbol Descriptions

VCE (sat)

Qg

Cies

Coes

Cres

Td

Tr

Ton

Tf

Toff

Collector - Emitter Saturation Voltage

The saturation voltage between the collector and the emitter when the rated current is

applied to the collector and the rate voltage is applied between the gate and the emitter.

Total Gate Charge

The amount of the gate electric charge needed for the IGBT to be completely On.

The amount of the driving current needed can be decided.

Input Capacitance

Output Capacitance

Reverse Capacitance

Turn on Delay TimeThe time for the output to reach the 10% of the maximum of the output current

waveform after the pulse is applied to the gate.

Turn on Rise Time

The time to reach from 10% to 90% of the output current waveform.

Turn on Time

The time for the output to reach the 90% of the maximum of the output current

waveform after the pulse is applied to the gate.Turn off Falling Time

The time to reach from 10% to 90% of the output current waveform.

Turn off Time

The time for the output to reach the 10% of the maximum of the output current

waveform after the pulse is removed from the gate.

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HIGH VOLTAGEHIGH VOLTAGE

HIGH CURRENTHIGH CURRENT

HIGH FREQUENCYHIGH FREQUENCY

GTO

BJT

IGBT

MOSFET

FREQUENCY

POWER

1 70 1000KHZ

IGBT Operation Area

25 KW

10

1

0.1

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Industrial Equipment (Welding, UPS, IH Heater) Package Type : 2-PAK,1-PAK Module(FM2G...,FM1G....)

Current Rating : 600V : 50 ~ 600A, #1200V : 50A ~ 200A

FULL BRIDGE TYPE

4*1-PAK IGBT MODULE

2*2-PAK IGBT MODULE

Examples of Application Circuit (II)

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Examples of Application Circuit ( )

Low Output CVCF Inverter

Filter

CVCF Inverter (UPS)

M

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Examples of Application Circuit ( )

VVVF Inverter (PWM)

VVVF Inverter (PAM)

M

M

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UnitPFCorctifierReDiode

IGBT ModulesIGBT Modules

UnitIsolation

CPUControlfor

SupplyPower

DrivingGatefor

SupplyPower

MultiIsolated

DriversGate

UnitIsolation

UnitgsinSen

Capacitors

LinkDC

Variable Voltage &Variable Frequency

MotorsACSourceAC

Constant Voltage &Constant Frequency

lock Diagram of Inverter System

. Using the Conventional IGBT Modules

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+

PWM

To Gate

3

Welding

Output

Starter

Voltage

Current

Full Bridge Topology

50 ~ 400A / 600V,1200V(IGBT 2-PAK Module) : Large Capacity

Welding Machine type-1

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+

PWM

To Gate

3

WeldingOutput

Starter

Voltage

Current

2 IGBT Forward Topology

20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity


* Normally IGBT using by parallel connection

Parallel numbers depend on output power

* Need Vce(sat) matching tightly (with in 0.1V)

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+

PWM

To Gate

3 Welding

Output

Starter

Voltage

Current

Half Bridge Topology

50 ~ 400A / 600V,1200V(2-PAK) : Large Capacity20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity


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Induction Heating JAR & Cooker

AC

Gate Drive

Circuit

Current FeedbackIH -Controller

This single ended resonant inverter is developed for the rice cooker

because of simple construction, high efficiency and low cost.

IGBTSolutions

- SGH40N60UFD

- SGL80N60UFD

- SGL160N60UFD

- SGL60N90DG3

- SGL40N150D

- FGL40N150D- FGL60N170D

Half & Full

Bridge Type

Single Ended Type

Features- Low Saturation Voltage

- Simple Gate Drive

- Wide SOA

- IGBT With FRD

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V C C 1

V C C 2

D R I V E I C

D R I V E I C

P R O T E C T I O N

P R O T E C T I O N

1

2

3

1

2

3

1 2

1 2

1 2

1 2

D R I V E I C

P R O T E C T I O N

P R O T E C T I O N

D R I V E I C

V C C 1

V C C 2

1

2

3

1

2

3

1 2

1 2

1 2

1 2

- Medium power application

- Bridge topology(half/full)

- Photo coupler + analog driver

with de-saturation network- Device : Photo coupler +

MC33153(Motorola)

FAN8800(FSC)

- Medium/High Power application

- Bridge topology (half/full)

- Hybrid : photo coupler + discrete driver

One chip : photo coupler with analog driver- Device : One chip, HP316J(HP)

Hybrid, EXB841(Fuji)

M57962(Mitsubishi)

IGBT Gate Drive Solutions-3

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Power Loss

= Switching Loss + Conduction Loss

Switching Loss = Turn On Loss + Turn Off Loss

Vce(sat) Leakage Current

VceIc

Conduction Loss

Off TimeOff Time On TimeTurn On

Time

Turn Off

Time

Turn On

Loss

Turn Off

Loss

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Half Bridge Test Circuit

+

-

+

-15V

Load

+ 15V

- 15V D.U.T.

Same

D.U.T.

Rg

Waveform

Switching Test of IGBT

Inductive Load

G

G

G

Vge

Ic

Vce

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Question: What is the Short Circuit Withstand Time(Tsc) ?

Answer :- IGBTs are need to be protected from over current caused by Motor destruction or fault by noise.

Normally protection circuit has delay time(3~7uS),so IGBTs have to withstand certain time underShort circuit condition

- Motor drive product (RUF-Series) is guaranteed at least 10uS for Tsc.

MControl

&

Driver

Over Current Detect

&Feedback

Delay time 3~7uS

SC --> Detecting abnormal condition --> Feedback --> Gate Turn-off

(Over Vce(sat),DC line current) (Soft Turn-off)

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Question: What is a difference between RUF and UF/XF SERIES ?

Answer:- IGBT application is mainly divided into two parts.

. One is the motor drive application(AC INDUCTION, SERVO,BLDC,SR MOTOR).and the other is power conversion application(SMPS,UPS, CONVERTER).

- product line-up and characteristics are as follow.

Series

RUF/RUFD

UF/UFD

XF/XFD **

NO Suffix

Application

Motor

SMPS(100khz)

IH Cooker, Strobo

Design key point

Rugged,SC Rated

High performance

High Speed

depend on System

Characteristics

Vce(sat)=2.2V,tf=120nS



depend on Device

Example

SGP5N60RUFD

SGP23N60UFD

?????

SGL40N150D

SGR15040L

** : under developing

- The ordering system of IGBT Module is not classified as applications but is follows

US series for convenience.

But basic characteristics of Module is identified with that of Discrete IGBT RUF Series.

(Rugged,SC Rated)

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Question: In place of MOSFET, IGBT can be used in power conversion

application?

Answer :*IGBT can take the place of MOSFET in power conversion applications because of the same

gate drive method, voltage driving.* Take care of the specific characteristic of your system before applying IGBT.

* Especially, in bridge topologies, do use the CO-PAK IGBT including diode.

1) LIMITATION OF FREQUENCY (in case taking place of MOSFET in several systems)

- RUF/RUFD : UP TO 30KHZ

- UF/UFD : UP TO 70KHZ (for hard switching)

- XF/XFD : UP TO 100KHZ

2) GATE DRIVE CIRCUIT

- Lower gate-resistance is possible in bridge topologies than that of MOSFET because

there is any limitation of gate-resistance which can destroying devices by dv/dt and

di/dt.

- Lower gate-resistance offers lower turn-on loss.

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Answer :

* Most power devices (BJT, MOSFET... etc.) usually offers the current Rating at Tc = 25 .* In motor applications, Fairchild IGBT offers the current value defined at the condition ofTc = 100 and in the power conversion applications, offers the value at Tc = 25 .

* The current rating of Tc = 25 is about double comparing with that of Tc = 100 .

SGP40N60UF(40A at Tc=25 )SGP20N60RUF(20A at Tc=100 )

Question: Whats the IGBTs Current Rating?

Same current rating

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Question: Whats Turn off Energy (Eoff) ?

Answer :* Turn off Energy (Eoff) offers useful tips to designers ; how much switching-losses device generates

and how to design the thermal management.* Switching loss can be easily expected in systems by multiplying Eoff specified in datasheets and

switching frequency of systems

* Eoff can provide more valuable information to designer than the turn-off falling time, tf.

Ic Vce

Turn off Waveform

Turn off Power

(P=V*I)

Turn off Energy

(E= P(t) )

S/W Loss=on loss+off loss

=(Eon+Eoff) * f

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Question: How come Voltage Ratings are 600V / 1200V ?

Answer : * The voltage rating of IGBT is generally divided into two part, 220/240V 3-phase AC and 400/440V.

* For instance, there are 200V rating IGBTs for low voltage UPS, 1700V rating for 580 AC powersource, and 2200/3300V rating for several kind of railway systems.

* Industry needs 400/900/1500V rating IGBTs more and more.

AC 220 --> DC (220*1.4=311V) -->AC variation +Design Margin ( 311*1.8 = 560V )

AC 380 --> DC (400*1.4=560V) --> ( 560*1.8 = 1008V )

1. IGBT VOLTAGE RATING ( Bridge Topology )

2. IH APP IGBT VOLTAGE RATING ( Zero Voltage Switching )

AC 220 --> DC(220*1.4=311V) -->reverse voltage(311*3.14=980V) --> (980*1.5=1470V )

AC 110 --> DC(110*1.4=155V) --> (155*3.14 =490V) --> (490*1.5=750V )

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FAIRCHILD IGBTs Solution

We only recommend to use Fairchild IGBT to people who have used IGBT

made in some where else.Thats the only how they can well the superior quality of Fairchild IGBT.

High Performance

- Low Saturation Voltage

- High Speed Switching

- Low Turn-off Energy

High Ruggedness

- Latch-Free Characteristics- Short-Circuit Immunity

High Current- Easy to Parallel Operation

- Positive Temperature Coefficient

Fairchild offers... Performance Curve

2.0 2.1 2.2 2.3 2.4 2.5 2.60

20

40

60

80

100

600V @ Vce=300V

1200V @ Vce=600V

Eoff[uJ/A]

Vce(sat) [V]

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S G P 10 N 60 R UF D

Voltage Rating(X 10)

Current Rating

Device Type

G:IGBT

S: SEMICONDUCTOR

F: FAIRCHILD

Package Type

P: TO-220 R: D-PAK

S: TO-220F U: I-PAK

H: TO-3P W: D2-PAK

F: TO-3PF I : I2-PAK

L: TO-264

N : N-Channel

Built in FRD

R : Short Circuit Rated

UF : Ultra Fast S/W

Ordering Information of IGBT Discrete

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FM E 6 G 30 US 60

Voltage Rating(X 10)

Current Rating

G: IGBT

Circuit Type

1 : Single

2 : Half Bridge

6 : 3Phase Bridge

7 : Complex

FAIRCHILD Module

Die characteristics

US : Ultra Fast & SC Rated

Module Type

Blank : Standard Type

E : Econo TypeC : Complex Type

Ordering Information of IGBT Module

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IGBT Li


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High Performance IGBT

1.2 3 7 13 20 40 80

600 SGR2N60UF SGR6N60UF SGP13N60UF SGP23N60UF SGP40N60UF SGH80N60UF

SGP6N60UF SGS13N60UF SGS23N60UF SGS40N60UF

600 SGR2N60UFD SGP6N60UFD SGP13N60UFD SGP23N60UFD SGH40N60UFD SGH80N60UFD SGL160N60UFD

SGS6N60UFD SGS13N60UFD SGS23N60UFD SGF40N60UFD

SGW6N60UFD SGW13N60UFD SGW23N60UFD

Vces [V]SymbolIc [A] @ Tc=100

High Performance IGBT

IGBT Line-up

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R d IGBT


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Rugged IGBT

5 10 15 20 25 30 50

600V SGP5N60RUF SGP10N60RUF SGP15N60RUF SGP20N60RUF SGH30N60RUF

SGW5N60RUF SGW10N60RUF

1200V SGH5N120RUF SGH10N120RUF SGH15N120RUF SGH20N120RUF SGH25N120RUF

600V SGP5N60RUFD SGP10N60RUFD SGH15N60RUFD SGH20N60RUFD SGH30N60RUFD SGL50N60RUFD

SGS5N60RUFD SGS10N60RUFD

SGW5N60RUFD SGW10N60RUFD

1200V SGH5N120RUFD SGH10N120RUFD SGH15N120RUFD SGH20N120RUFD SGL25N120RUFD

D-PAK I-PAK D2-PAK I2-PAK TO-220 TO-220F TO-3P TO-3PF TO-264

Symbol Ic [A] @ Tc=100Vces [V]

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IGBT M d l P k & E i l t Ci it


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FME6G series FME6G series

FMC6G series FMC6G series

FMC7G series FMC7G series

FM2G series

FMBL series

FMBH series

FMBL series FME6G series

FMBH series FMC6G series

FM2G series FMC7G series

IGBT Module Packages & Equivalent Circuits

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