2, 2011

47 621.383

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. -, " " - Cd02Hg08Te, InSb, InGaAs, GaPAs, PbS, PbSe, Si Ge

8—12, 3—5, 1—2 2 96, 2 256, 4 288, 2 (2 288), 6 576, 128 128, 256 256, 320 256, 384 288 .,

, .

PACS: 85.60.-q

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x 0,2 0,3 CdTe ( - x = 0,003), 77

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2, 2011 52

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2, 2011

53

. 1 -, -

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1800—2200

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- InAs

[2, 3, 6, 8—10] In053Ga047As/InP 1,7 320 256 (25 25 ) InxGa1-xAs/InP x = 0,53 1,7 > 1014 (20 C) 320 240 x = 0,67 2,0 1015 (–23 ) 1 512 x = 0,71 2,2 x = 0,82 2,5 In08Ga02As/GaAs 2,53 (300 K) R0A 8 2 1 1 (45 500 ) 2,43 (250 K) InxGa1-xAsySb1-y 2,1 1 1010 1 1 ( 200—300 ) In08Ga02Sb/GaSb 2,04 3,3 1010 (20 C) 1 1 ( 0,8—2,9 ) In08Ga02Sb/In017Ga08Sb 1,68 5,5 1010 (20 C) Hg1-xCdxTe x = 0,525 1,94 (240 K) 85 256 1000 x = 0,44 2,55 320 256 (30 30 ) Hg1-xCdxTe 2,05 > 60 % 640 512 (18 18 )

. TEP- — Transferred Electron Photocathode.

2, 2011 54

0 20 40 60 80 100 120 140 160 180 200,

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.

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2, 2011

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2, 2011 56

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. — ; — ; — .

-

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= 3—5 ) 100 1000 - / . -

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h

2, 2011 58

p+ n+ ( — , -

), n+p p+ ( ) p-n. -

(3—50) 10-9 , 6 10-10 [48].

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8—12 - -

[49].

- .

- . 3.

3

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CdHgTe InGaAs/InP Si , n 1 1 1 , 0,18 0,05 0,5 p-n p+ n+ n+p p , 80 295 295 fB, 5,1 107 6 108 —

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-

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PbSe, Si Ge 8—12, 3—5, 1—2 2 96, 2 256, 4 288, 2 (2 288), 6 576, 128 128, 256 256, 320 256, 384 288 ., - ,

. ,

, - .

1. Long J. P., Varadaraajian S., Matthews J., Schetzina. J. F. UV-detectors and focal plane array imagers based on AlGaN p-i-n-pho-todiodes//Optoelectronics Review. 2002. V. 10. No. 4. P. 254.

2. Photonics Spectra. 2004. V. 38. No. 2. P. 5, 78. 3. Rothman J., Perrais G., De Borniol E., Castelein P., Bai-

er N., Guellec F., Tchagaspanian M., Ballet P., Mollard L., Gout S., Perez A., Fournier M., Chamonal J.-P., Tribolet P.M., Destefa- nis G.. HgCdTe ADP-focal plane array development at CEA Leti-Minatec//Proc. SPIE. 2008. V. 6940. P. 69402N(1)—69402N(12).

4. Richards P. L. Bolometers for infrared and millimeter waves // J. Appl. Phys. 1994. V. 76. No. 1. P. 1—24.

5. . . - // " -

". 2006. T. 1. 1—2. C. 97. 6. . ., . . - - -

. — .: ; , 2007. 7. . . - - // .

2003. T. 173. 6. C. 649—665. 8. . ., . . - . — .: , 2006.

9. Sidorov Yu. G., Yakushev M. V., Pridachin D. N., Vara- vin V. S., Burdina L. D. The heteroepitaxy of II—VI compounds on the non-isovalent substrates (ZnTe/Si) // Thin Sol. Films. 2000. V. 367. P. 203.

10. Sabinina I. V., Gutakovskii A. K., Sidorov Yu. G., Dvoret-sky S. A., Kuzmin V. D. Defect formation during growth of CdTe(111) and HgCdTe films by molecular beam epitaxy // Cryst. Growth. 1992. V. 117. P. 238.

11. Yakushev M. V., Babenko A., Kartashov D., Mikhailov N. N., Sabinina I. V., Sidorov Yu. G., Vasiliev V. V. V-defects at MBE-heteroepitaxy on GaAs(301) and Si(301) substrates // Proc. SPIE. 2005. V. 5957. P. 590.

12. Ettenberg M. H., Cohen M. J., Brubaker R. M., Lange M. J., O’Grady M. T., Olsen G. H. Indium Gallium Arsenide Imaging with Smaller Cameras, Higer Resolution Arrays and Greater Ma-terial Sensitivity // Ibid. 2002. V. 4721. P. 26.

13. Zimmermann John, L., Nemeth S., Colin T., Merken P., Borghs S., C.van Hoof. Extended In02Ga08As on GaAs Detectors for SWIR Linear Sensors // Ibid. 2001. V. 4369. P. 692—697.

14. . ., . . - //

, 2003. 37. C. 1025.

2, 2011

59 15. ., ., . - // . 2000. 7. C. 47.

16. . ., . . - // -

. 2005. 2. 17. . ., . ., . ., - ./ . . . . -

: , - . — .: , 1984.

18. . ., . ., . . - 2 -

- // .

2006. 5. . 27. 19. . ., . ., . .

- // . 2010. 1. . 50. 20. . ., . . -

- 3 5 // . 1999. 2. . 41. 21. Electro-Optical Imaging: System Performance and Model-

ing. Editor Lucien M. Biberman. SPIE Rress, Bellingham, Wa-shington, 2000.

22. . . 1/ . . . . — .: , 1995.

23. . . - // . 2001. 5. . 2. 24. Escher J. T., Maloney T. J., Gregory P. E., Hyder S. B.,

Houng Y. M. Photoemission to 1.7 m from an InP/InGaAs tras-fered-electron photocathode//IEEE Trans. Electron. Devices. 1978. V. ED-25. P. 1347.

25. John J., Zimmermann L., Nemeth S., Colin T., Merken P., Borghs S., van Hoof C. Extended In02Ga08As on GaAs Detectors for SWIR Linear Sensors//Proc. SPIE. 2001. V. 4369. P. 692.

26. Chorier P., Tribolet P., Fillon P. A.Manissadjian. Appli-cation needs and trade-offs for Short Wave Infrared detectors // Ibid. 2003. V. 5074. P. 363.

27. Ettenberg M. H., O’Grady M. T., Huang S., Cohen M. J. A miniaturized 320 256 indium gallium arsenide SWIR camera for robotic and unmanned aerial vehicle application // Ibid. P. 353.

28. Abedin M. N., Refaat T. F., Joshi R. P., Sulima O. V., Mauk M., Singh U. N. Characterizatin and Analisis of InGaAsSb Detectors // Ibid. P. 332.

29. Cabelli S. A., Pan J., Bernd S. G., Tennant W. E., Black-well J. D., Bhargava S., Pasko J. G., Piquette E. C., Edwall D. D. High-Resolution Extended NIR Camera // Ibid. P. 343.

30. Refaat T. F., Abedin M. N., Singh U. N., Bhagwat V., Bhat I. B., Dutta P. S. Characterization of InGaSb detectors for 1.0 to 2.4 m application // Ibid. 2004. V. 5406. P. 56.

31. Bitter M., Pan Z., Kristjanson S., Boman L., Gold R., Pau-chard A. InGaAs-on-Si Photodetectors for High-Sensitivity Detec-tion // Ibid. P. 1.

32. Boisvert J., Masalykin A., Kinsey G. S., Isshiki T., Haddad M., Sudharsanan R., Zheng X., Campbell J. C. Characterization of InAlAs/InGaAs APD arrays for SWIR imaging applications // Ibid. P. 13.

33. . . — . -: , 2003.

34. . ., . ., . ., . . -

( 1 2) // . 2003. 1. C. 105. 2. . 54.

35. . ., . ., . ., - . .

// . 2007. 2. . 43. 36. . ., . ., . .

- // . 2009. 2. .57.

37. . ., . ., . ., - . ., . ., . ., . ., . ., . ., . . - 288 32 InSb // . 2007. 2. . 61.

38. ., . - " " // . . 54. 39. Zandian M., Scott D., Garnett J., Edwall D. D., Pasko J.,

Farris M., Daraselia M., Arias J. M., Bajaj J., Hall D. N. B., Ja-cobson S., Luppino G., Parker S. Ten-inch Molecular Beam Epi-taxy Production System for HgCdTe Growth//Journ. Electron. Mater. 2005. V. 34. No. 6. P. 891.

40. Schooley M. G., Mei E. Low Cost 3D Vision for Autono-mous Vehicles // Proc. SPIE. 2003. V. 5074. P. 28.

41. Demiguel S. Theoretical analysis and comparison of SWIR active imaging detectors//Ibid. 2009. V. 7298. P.729836(1)–7298236(10).

42. Reine M. B., Marciniec J. W., Wong K. K., Parodos T., Mullarkey J. D., Lamarre P. A., Tobin S. P., Minich R. W., Gus-tavsen K. A., Compton M., Williams G. M. Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes // Journ. Electron. Mater. 2008. V. 37. No. 9. P. 1377.

43. Derelle S., Bernhardt S., Haidar R., Primot J., Deschamps J., Rothman J., Perrais G.. A Monte Carlo study of multiplication and noise in HgCdTe avalanche photodiodes//Proc. SPIE. 2008. V. 7003. P. 70031P(1)—70031P(11).

44. Beck Woodall M., Scritchfield R., Ohlson M., Wood L., Mi-tra P., Robinson J. Gated IR Imaging with 128 128 HgCdTe Electron Avalanche Photodiode FPA//Journ. Electron. Mater. 2008. V. 37. No. 9. P. 1335.

45. Kinch M. A Theoretical Model for the HgCdTe Electron Avalanche Photodiode//Ibid. P. 1453.

46. Guellec F., Tchagaspanian M., de Borniol E., Castelein P., Perez A., Rothman J. Advanced pixel design for infrared LADAR imaging//Proc. SPIE. 2008. V. 6940. P. 69402M(1)—69402M(10).

47. Pistone F., Tribolet P., Lefoul X., Zecri M., Courtas S., Jenouvrier P. New High Gain Detector for Active Imaging // Ibid. 2009. V. 7298. P. 729834(1)—7298234(10).

48. . ., . ., . ., - . ., . ., . ., . .,

. ., . ., . ., . . -

0,3—11 // . 2002. 6. C. 52.

49. . ., . ., . ., - . . CdxHg1-xTe 2- // . 1999.

3. C. 54.

2, 2011 60

Current state and new prospects of the semiconductor infrared photoelectronics

(Part 1*)

M. D. Korneeva1, V. P. Ponomarenko1, 2, A. M. Filachev1, 2 1Orion R&P Association, 9 Kosinskaya str., Moscow, 111402, Russia

2MIPT, 9 Institute al., Dolgoprudny, 141700, Russia

The paper shows condition and results of development in a number of basic technologies of in-frared photoelectronics: semiconductor photosensitive materials, solid-state photo converters for IR and UV regions of the electromagnetic radiation, multispectral and fast response devices, THz radia-tion recording devices, metamaterials and nanotechnology for creation of new types of optoelec-tronic devices.

PACS: 85.60.-q

Keywords: photoelectronics, thermal vision, multispectral, InSb, solid solution, detectivity, array, fast-acting. Bibliography — 49 references. Received November 22, 2010

* Part 2 — 2011. No. 3.